CN103575222B - Solar base plate film multitask measuring system - Google Patents
Solar base plate film multitask measuring system Download PDFInfo
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- CN103575222B CN103575222B CN201210281665.5A CN201210281665A CN103575222B CN 103575222 B CN103575222 B CN 103575222B CN 201210281665 A CN201210281665 A CN 201210281665A CN 103575222 B CN103575222 B CN 103575222B
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Abstract
A kind of solar base plate film multitask measuring system of the present invention, comprise measure platform, light source, for obtaining spectrograph, the computer of brilliant silicon substrate spectrum numerical value and brilliant silicon reference sample spectrum numerical value; Described measurement platform can place brilliant silicon substrate and brilliant silicon reference sample simultaneously, and in described measurement platform, incident light beam strikes angle can adjust; Described computer is connected with described measurement platform by control cables; Described computer is connected with described spectrograph by data line, receive brilliant silicon substrate spectrum numerical value and brilliant silicon reference sample spectrum numerical value, and according to the thickness of brilliant silicon substrate spectrum numerical value and the brilliant silicon substrate of brilliant silicon reference sample spectrum numerical evaluation, material optical constant and corresponding roughness correction factor ��; Described measurement platform is connected with described light source and spectrograph respectively by " Y " shape optical fiber. The measuring system of a kind of silica-based solar cell provided by the invention surface anti-reflection film, it is achieved that measured silica-based solar cell surface anti-reflection film thickness and optical signature by method for measuring reflectance.
Description
Technical field
The present invention relates to field of optical detection, it is specifically related to a kind of solar base plate film multitask measuring system.
Background technology
Optical method for measuring film thickness and optical constant (n and k) usually can adopt method for measuring reflectance or elliptical polarization method. Ellipsometer test can better measure thickness and the optical constant of uniform thin film in theory, but equipment price costliness (such as: J.A.Woollam series ellipsometer test). Adopting method for measuring reflectance, the especially film thickness gauge of vertical incidence, structure is simple, thickness is greater than to the membrane structure of 50nm, measuring accuracy height, speed fast (such as: OceanopitcsNanoCalc series).
Method for measuring reflectance, by first measuring the reflection spectrum of the reference sample of known reflectivity, then measures the reflection spectrum of testing sample, calculates the reflectivity of sample to be measured by reference to the ratio of sample and testing sample spectrum; Then, by membrane structure modeling (simulation of multi-layer film structure reflectivity) and regression algorithm matching, calculate testing sample surface film structure and optical constant (n and k). As shown in Figure 1, existing multi-layer film structure reflectivity modeling method, is mostly based upon on the basis of uniform and smooth flat film; When sample surfaces is irregular, as shown in Figure 2, reflected light propagation direction is complicated, causes sample analysis and measures the difficulty of two aspects. 1) numerical aperture (NumericalAperture, N.A.) of testing sample reflectivity and collection optical system is relevant. When numerical aperture is bigger, multidirectional reflected light is collected by major part, and the reflected light experiencing different optical process will be simultaneously collected; When numerical aperture is less, only the reflected light in Small angle is collected, and signal is more weak. 2) reflected light is complicated relative to the incident angle distribution range of film. When incident angle within the specific limits time, the simulation modeling of reflectivity is closely connected with film incidence angle, but there is the possibility repeatedly reflected, it is difficult to accurately modeling and calculate reflection spectrum.
Solar cell is widely used as the environment-friendly and green energy, and will implement in a large number. In order to reduce the reflectivity of solar cell in manufacture of solar cells process, silicon substrate surface is carried out chemical corrosion process, form coarse surface. In addition, its silicon substrate surface will reduce, by growth one layer of anti-reflection film (antireflective film, anti-reflectivecoating), the reflectivity that light beam is incident to solar cell surface, increase transmissivity. In process of production, therefore the thickness of control and measurement silicon substrate surface anti-reflection film and optical signature (can characterize and absorb feature) become the important step in silica-based solar cell production process.
In current techniques, having the method adopting ellipsometer test to measure, as described in ThinSolidFilms518 (2010) 1,830 1834, but ellipsometer test price is higher. Optical method for measuring film thickness and material behavior are usually by normal-incidence reflection rate measuring method. First this measuring method measures the reflection spectrum of the standard model of known reflectivity, then the reflection spectrum of measure sample, by the reflectivity calculating measure sample of the ratio that two-beam is composed; Membrane structure and the material of sample is obtained by later stage modeling and numerical fitting. This method requires that film surface is more smooth. When sample surfaces is very coarse (yardstick of plane heaving and dipping is much larger than the wavelength measured), the diversity of angle during the optical scattering that sample surfaces causes and light beam incident film, and the existence repeatedly reflected makes method for measuring reflectance be difficult to implement. In current techniques, useful integrating sphere collects the reflectometer of the reflected light on rough samples surface. Such as, for measuring the full spectral reflectance formula film thickness measuring instrument SR (Shanghai causes Dongguang electricity Science and Technology Ltd.) of sun power substrate suede, it may also be useful to integrating sphere collects the optical scattering problem solving sample uneven surface and causing as reflected light. But due to sample uneven surface, during vertical incidence, during light beam incident film the angled diversity of tool and may exist once, two times, three times and repeatedly reflect the measured deviation problem caused individually and cannot solve. Even such as mono-crystalline silicon solar substrate surface, namely having the film on the uneven surface substrate of certain regularity still cannot Measurement accuracy.
The surface characteristic of monocrystalline (mono-crystal) silicon base after chemical corrosion process, such as Fig. 3 a, arrangement that in units of the most pyramid for taking bottom surface as four directions type of the surface tissue of silicon single crystal based solar battery silicon base, structure is parallel to each other and become, the sidewall (<111>face) of the unit structure of pyramid and the angle of horizontal bottom (<100>face) are 54.7 degree. Due to the selection of silicon chip lattice direction, the sidewall of the unit structure of monocrystaline silicon solar cell silicon substrate surface is parallel to each other respectively, such as Fig. 3 b. Therefore, sidewall (<111>face) can be divided into 4 groups, and often group is identical with angle relative to the direction of silicon base integral surface and be parallel to each other, such as Fig. 3 c. Therefore, when observing with the direction with sidewall (<111>face) surface-normal in monocrystaline silicon solar cell substrate surface, the surface overwhelming majority is made up of parallel to each other but highly different plane, and<100>of only a few surface is not parallel with this face, forms coarse part. When detecting light beam is incident along the direction of sidewall (<111>face) surface-normal in monocrystaline silicon solar cell substrate surface, namely, become 54.7 degree with monocrystal silicon substrate face, it is all vertical incidence relative to the surface anti-reflection film of each height<111>plane, such as Fig. 3 c. In the case, the reflected light of<100>plane of only a few, owing to not being vertical incidence, cannot return and collected on former road. In a word, when the measurement for monocrystaline silicon solar cell adopts silicon-base plane to tilt 54.7 degree, when detecting light beam vertical incidence is to the mode on sidewall (<111>face) surface in monocrystaline silicon solar cell substrate surface, its overwhelming majority reflection is identical with the two-phonon process of vertical incidence in smooth-flat-surface situation, different from vertical incidence smooth-flat-surface two-phonon process, that is, the reflected light part signal of<100>plane of only a few can not be collected by control both optical system numerical aperture. The step of usual measure sample absolute reflectance is:
A. the dark numerical value Id of measure spectrum instrument;
B. reference sample reflection spectrum is measured, such as, single silicon wafer of polishing, and obtain spectrum numerical value Ir;
C. measure sample, and obtain numerical value I; According to discussing above, when concrete measurement comprises the monocrystaline silicon solar cell substrate sample of anti-reflection film, detecting light beam with relative to the 54.7 degree of incidences of silicon single crystal base plane, that is, relative to sidewall (<111>face) vertical incidence in silicon single crystal based solar battery surface and obtain numerical value I;
The relative reflectance R ' of sample is:
R '=(I-Id)/(Ir-Id)
Absolute reflectance R can be obtained by following formula
R=R ' * Rr
Rr is the known absolute reflectance of reference sample, is generally observed value or the calculated value of Other Instruments.
That is, R '=(I-Id)/(Ir-Id)=R/Rr
Being the numerical value of measurement on the left of equation, right side is the numerical value that can calculate after theoretical modeling. (usually constant term Rr is placed and on the left of equation, then will express the absolute reflectance of sample on the left of equation. ) above method, on the right side of equation, theoretical modeling part is only applicable to smooth-flat-surface film; When smooth-flat-surface film, optical system has identical optically detecting efficiency for reference sample and film sample. Such as, optical system has identical optical numerical value aperture, the scattering degree that sample surfaces is identical. But there is irregular plane in the anti-reflection film surface smoother due to the silicon single crystal based solar battery anti-reflection film surface tilted, although the reflected light of these planes is by controlling the numerical aperture (NumericalAperture of light path, N.A.) not collected, to ensure that the reflected light measured all experiences the two-phonon process identical with level and smooth anti-reflection film surface; But this part concave plane can cause a certain proportion of loss of reflectivity in measuring result, that is, the reflectivity R measured when being less than smooth-flat-surface. Therefore cause and there is deviation with practical situation after theoretical modeling on the right side of equation. In addition, due in measuring process, plane height inconsistent, can cause collecting efficiency relative to the relative change of optical system with height, also can affect the reflectivity R of measurement.
Summary of the invention
Technical problem to be solved by this invention is to provide the measuring system of a kind of silica-based solar cell surface anti-reflection film.
For solving the problems of the technologies described above, the present invention provides a kind of solar base plate film multitask measuring system and comprises: for place brilliant silicon substrate, brilliant silicon reference sample and the incident angle of light can be adjusted measurement platform, light source, for obtaining spectrograph, the computer of brilliant silicon substrate spectrum numerical value and crystalline substance silicon reference sample spectrum numerical value;
Described computer is connected with described measurement platform by control cables; Described computer is connected with described spectrograph by data line, receive brilliant silicon substrate spectrum numerical value and brilliant silicon reference sample spectrum numerical value, and according to the thickness of brilliant silicon substrate spectrum numerical value and the brilliant silicon substrate of brilliant silicon reference sample spectrum numerical evaluation, material optical constant and corresponding roughness correction factor ��; Described measurement platform is connected with described light source and spectrograph respectively by " Y " shape optical fiber.
The measuring system of a kind of silica-based solar cell provided by the invention surface anti-reflection film, it is achieved that measured silica-based solar cell surface anti-reflection film thickness and optical signature by method for measuring reflectance.
Accompanying drawing explanation
Fig. 1 is the schematic diagram that vertical incidence light beam reflects on smooth film surface;
Fig. 2 is the schematic diagram that vertical incidence light beam reflects on coarse film surface;
Fig. 3 a is the schematic diagram of monocrystaline silicon solar cell surface tissue;
Fig. 3 b is the front view of monocrystaline silicon solar cell surface tissue;
Fig. 3 c is the side-view of silicon grain surface under electron microscope;
Fig. 4 is silicon single crystal base solar silicon substrate surface sidewall figure, and detecting light beam is with the schematic diagram incident relative to silicon single crystal base plane 54.7 degree;
Fig. 5 is for, after increase roughness factor �� method, measuring the schematic diagram of the curve-fitting results of the polysilicon based solar battery comprising 90nm silicon nitride anti-reflection film;
Fig. 6 is for, after increase roughness factor �� method, analyzing the schematic diagram of the anti-reflection film optical constant result of the polysilicon based solar battery adopting little optical numerical value inside diameter measurement to comprise 90nm silicon nitride anti-reflection film;
When Fig. 7 is not for increasing roughness factor �� method, analyzes and adopt little optical numerical value aperture (0.22) to measure the reflectivity of polysilicon based solar battery and the schematic diagram of the level and smooth silicon base 90nm silicon nitride analogue value that comprise 90nm silicon nitride anti-reflection film; Wherein, the 3 level and smooth silicon base 90nm silicon nitride analogues value of expression, the relative reflectance of 4 expression polysilicon based solar batteries;
Fig. 8 is for after increase roughness factor �� method, adopt the silicon single crystal of polishing as, during with reference to sample, analyzing the schematic diagram of the curve-fitting results adopting little optical numerical value aperture (0.22) to measure the polysilicon based solar battery comprising 90nm silicon nitride anti-reflection film; Wherein, the relative reflectance of 5 expression polysilicon based solar batteries, 6 represent the level and smooth silicon base 90nm silicon nitride analogue value comprising roughness factor;
Fig. 9 is for, after increase roughness factor �� method, adopting the polysilicon not comprising anti-reflection film as, during with reference to sample, analyzing the schematic diagram of the curve-fitting results of the polysilicon based solar battery adopting little optical numerical value inside diameter measurement to comprise 90nm silicon nitride anti-reflection film; Wherein, the relative reflectance of 8 expression polysilicon based solar batteries, 7 show the even silicon base 90nm silicon nitride analogue value comprising roughness factor;
The solar base plate film multitask measuring system structural representation that Figure 10 provides for the embodiment of the present invention;
The measurement platform structural representation that Figure 11 provides for the embodiment of the present invention;
The measurement platform blast structural representation that Figure 12 provides for the embodiment of the present invention;
View during the measurement platform measuring monocrystalline that Figure 13 provides for the embodiment of the present invention;
The substrate stage blast structural representation that Figure 14 provides for the embodiment of the present invention;
The measuring head structural representation that Figure 15 provides for the embodiment of the present invention;
The measuring head blast structural representation that Figure 16 provides for the embodiment of the present invention;
The upright post component structure schematic diagram that Figure 17 provides for the embodiment of the present invention;
The columns assemblies blast structural representation that Figure 18 provides for the embodiment of the present invention;
The structure of fiber_optic assembly blast structural representation that Figure 19 provides for the embodiment of the present invention;
The transverse beam assembly blast structural representation that Figure 20 provides for the embodiment of the present invention;
The polycrystal-single-crystal switching that Figure 21 provides for the embodiment of the present invention becomes measurement apart from schematic diagram.
Reference numeral:
1, measure platform, 2, optical fiber, 3, light source, 4, spectrograph, 5, data line 6, computer, 7, control cables, 8, plane measured by mono-crystalline silicon solar substrate, and 9, plane measured by polycrystalline silicon solar substrate, and 10, polysilicon measures distance, and 11, distance measured by silicon single crystal, 1-1, base plate, 1-2, XY motorized precision translation stage, 1-3, substrate stage, 1-4, measuring head, 1-3-1, disk, 1-3-2, pressing plate, 1-3-3, monocrystalline silicon substrate groove, 1-3-4, polycrystalline silicon substrate groove, 1-3-5, tweezers groove, 1-3-6, polysilicon reference sample groove, 1-3-7, silicon single crystal reference sample groove, 1-3-8, silicon single crystal reference sample groove, 1-3-9, open holes, 1-4-1, columns assemblies, 1-4-2, structure of fiber_optic assembly, 1-4-3, transverse beam assembly, 1-4-1-1, column, 1-4-1-2, switching part, 1-4-1-3, axle, 1-4-1-4, bearing, 1-4-1-5, step cover, 1-4-1-6, magnet, 1-4-1-7, limited block, 1-4-2-1, arc support, 1-4-2-2, mounting block, 1-4-2-3, mounting block, 1-4-2-4, briquetting, 1-4-3-1, crossbeam, 1-4-3-2, optical fiber clamp, 1-4-3-3, sonet card seat, 1-4-3-4, handle, 1-4-3-5, steel disc.
Embodiment
As mentioned below, the present invention introduces roughness factor �� in modeling analysis process, compensates the different impact relative to smooth-flat-surface sample that this part causes.
The method utilizing reflective spectral measure silicon single crystal base solar surface film provided by the invention, its step is as follows:
The dark numerical value I of step a. measure spectrum instrumentd;
Step b. measures reference sample (such as, single silicon wafer of polishing) reflection spectrum, and obtains spectrum numerical value Ir;
Step c measure sample, and obtain spectrum numerical value I; When concrete measurement comprises the monocrystaline silicon solar cell substrate sample of anti-reflection film, detecting light beam is with relative to the 54.7 degree of incidences of silicon single crystal base plane, that is, relative to sidewall (<111>face) vertical incidence in silicon single crystal based solar battery surface and obtain spectrum numerical value I;
The relative reflectance R ' of sample is:
R '=(I-Id)/(Ir-Id),
Theoretical absolute reflectance R can be obtained by following formula
R=R ' * Rr,
RrFor the known absolute reflectance of reference sample, it is generally observed value or the calculated value of Other Instruments.
That is, R '=(I-Id)/(Ir-Id)=R/Rr,
Being the numerical value of measurement on the left of equation, right side is the numerical value that can calculate after theoretical modeling. Usually by constant term RrPlace and on the left of equation, then will express the absolute reflectance of sample on the left of equation. Modeling refers at given membrane structure, such as: the thickness of the film number of plies and every layer, the optical constant (N&k) of film on wavelength, when, theoretical by reflection of electromagnetic wave and transmission, calculate the process of the reflectivity of membrane structure on wavelength and transmissivity. Concrete modeling process can introduction in book of reference " SpectroscopicEllipsometryPrinciplesandApplications " (date of publication is 2007, and author is HiroyukiFujiwara) by name, repeat no more. Though sample surfaces roughness also can be a model part, but usually it is all unknown quantity when not measuring. Model described herein does not comprise Roughness Information. Above method, on the right side of equation, theoretical modeling part is only applicable to smooth-flat-surface film; When smooth-flat-surface film, optical system has identical optically detecting efficiency for reference sample and film sample. Such as, optical system has identical optical numerical value aperture, the scattering degree that sample surfaces is identical. But there is irregular plane in the anti-reflection film surface smoother due to the silicon single crystal based solar battery anti-reflection film surface tilted, although the reflected light of these planes is by controlling the numerical aperture (NumericalAperture of light path, N.A.) not collected, to ensure that the reflected light measured all experiences the two-phonon process identical with level and smooth anti-reflection film surface; But this part concave plane can cause a certain proportion of loss of reflectivity in measuring result, that is, the reflectivity R measured when being less than smooth-flat-surface. Therefore cause and there is deviation with practical situation after theoretical modeling on the right side of equation. In addition, due in measuring process, plane height inconsistent, can cause collecting efficiency relative to the relative change of optical system with height, also can affect the reflectivity R of measurement.
The present invention adds the modeling method optimizing uneven surface. That is, the calculation formula of sample reflection rate adds roughness factor ��. Still can there is certain defect and the scattering associated with wavelength due to sample surfaces, set the absolute reflectance R of rough samples in theory��It is set as with the theoretical absolute reflectance R relation of the smooth specimen calculated in modeling setting situation:
R��=�� * R,
Therefore, the absolute reflectance measuring rough samples has: (I-Id)/(Ir-Id)*Rr=R��=�� * R
That is, relative reflectance R '=(I-Id)/(Ir-Id)=�� * R/Rr,
When adopting polishing monocrystalline silicon piece as reference sample, Rr=Rsi. Here �� can represent for the relational expression relevant to wavelength further:
��=��+�� ��.
So, roughness factor �� can simplify and is interpreted as, parallel sidewall (<111>face) in silicon single crystal based solar battery substrate surface be spliced into smooth but and imperfect anti-reflection film sample, it is �� that the area of splicing plane accounts for the ratio of whole detection area, and namely �� * R represents the absolute reflectance of the surface anti-reflection film for the sidewall (<111>face) in silicon single crystal based solar battery substrate surface. So, except setting anti-reflection film thickness and optical constant are variable, simultaneously by roughness factor �� (coefficient M, N are set as variable), equation is set up with the theoretical reflectivity R calculated in modeling setting situation, by the curve fitting process of Numerical regression, thickness, material optical constant and corresponding roughness factor �� (coefficient M, N) can be calculated.
Wherein, the dispersive model of optical constant available materials represents, as: Tauc-Larentz model, Cauchy (Chauchy) model etc. When adopting regression Calculation matched curve, the coefficient in dispersive model and film thickness and roughness factor etc. similarly can be set as variable; Thus, by the coefficient spectrum line in the model that calculates, the optical constant obtaining material (n, k) composes line. The dispersive model details of material can with reference to HandbookOFEllipsometry, HarlandG.Tompkins, 2005; SpectroscopicEllipsometryPrinciplesandApplications, HiroyukiFujiwara, 2007.
Choosing of reference sample mainly contains two kinds of modes: the level and smooth monocrystalline silicon piece (<100>face and silicon polishing plane parallel) 1) using polishing, and during measurement, detecting light beam is with incident relative to monocrystalline silicon piece plane orthogonal. 2) the silicon single crystal based solar battery of anti-reflection film is not comprised after using corrosion treatment. During measurement, meet detecting light beam with relative to the silicon single crystal base plane 54.7 degree of incidences not comprising anti-reflection film, that is, relative to sidewall (<111>face) vertical incidence in the silicon single crystal based solar battery substrate surface not comprising anti-reflection film. When adopting the sidewall (<111>face) in silicon single crystal based solar battery substrate surface as reference sample, it is possible to omit the measurement of its absolute reflectance. Because, when it is as reference sample, its absolute reflectance Rr_54.7Can be expressed as:
Rr_54.7=��r*Rsi,
Herein, RsiFor the absolute reflectance of silicon single crystal, ��rFor the roughness factor as reference sample. Thus draw,
R '=(I-Id)/(Ir-Id)*Rr=(I-Id)/(Ir-Id)*��r*Rsi=R��=�� * R
That is, R '=(I-Id)/(Ir-Id)=(��/��r)*R/Rsi,
Compared with formula above, (��/�� hereinr) can be considered composite roughness coefficient, when namely adopting regression Calculation matched curve, it is possible to establish ��/��r=��+�� ��; Owing to measure sample and reference sample are all silicon single crystal base solar substrate surface, only having the difference without plated film, it has almost identical coarse situation, and identical measuring method, ��, ��rThere is numerical value relatively, can effectively offset the coarse deviation caused of part surface, than using the level and smooth monocrystalline silicon piece of polishing as better with reference to measurement effect during sample.
During actual measurement, can directly calculate R ' * RsiNumerical value, when use polishing level and smooth monocrystalline silicon piece as with reference to sample time, R ' * RsiNumerical value represents the absolute reflectance of sample under corresponding measuring state. When adopting silicon single crystal base solar substrate as, during with reference to sample, its numerical value and absolute reflectance exist the deviation in roughness. In the picture comprised below herein, numerical value corresponding to ordinate zou is R ' * Rsi-��
Fig. 5 is the reflectance spectrum of the monocrystalline substrate solar cell of 90nm silicon nitride anti-reflection film and the signal of fit-spectra result, the sidewall (<111>face) in the silicon single crystal based solar battery substrate surface not comprising anti-reflection film is adopted to be reference sample during measurement, in Figure 5, label 2 represents measurement of reflectivity data, and label 1 represents the 90nm silicon nitride single crystal silicon base analogue value. Pass through matching, it is seen that ��=1.180, ��=-0.092, it can be seen that roughness factor ��=1.180-0.092 ��.
Fig. 6 is for, after increase roughness factor �� method, analyzing the anti-reflection film optical constant result of the polysilicon based solar battery adopting little optical numerical value inside diameter measurement to comprise 90nm silicon nitride anti-reflection film, and optical constant adopts Tauc-Larentz model herein.
When specifically measuring, following three aspects need to be considered:
(1) the distance impact, in vertical direction, when absolute reflectance method of masurement by adopting, observed value and reference value all take from equal angular, tilt the height impact front and back caused substantially identical, and offset. In addition, by adopting less N.A. and eliminate some effects compared with the vertical incidence system of Diode laser or parallel light incidence.
(2), the incident angle of adjustment detection light is due to the symmetry in crystal orientation, there are 2 mutually perpendicular planes of incidence in every wafer surface, there are 4 incident directions and can meet detecting light beam with relative to the 54.7 degree of incidences of silicon single crystal base plane, that is, relative to sidewall (<111>face) vertical incidence in silicon single crystal based solar battery substrate surface. When the conditions are met, the strongest state of reflected light signal it is in. By angle and the position angle of continuous setup wafer face and incoming beam, judge the angle state of incident light with reflective light intensity intensity method.
(3), when adopting the sidewall (<111>face) in the silicon single crystal based solar battery substrate surface not comprising anti-reflection film for reference sample. The acquisition of reference spectra is by the silicon single crystal based solar battery substrate not comprising anti-reflection film of measurement standard, or directly measures the back side of the silicon single crystal based solar battery substrate sample comprising anti-reflection film to be measured. It is divided into silicon single crystal based solar battery substrate that 1. two kinds of situations do not comprise anti-reflection film according to the standard in known crystal orientation as with reference to sample herein, probe is after primary calibration, reference spectra when then every time measuring obtains the angle not needing to adjust sample or probe, can directly measure acquisition. Standard model placement can relatively carry platform and have fixing reference direction. Such as, the exclusive position of standard model can be placed in carrying platform non-rotating part design, such as, can in carrying platform rotating part recessing (tweezers groove) in order to place standard model, in addition, it is possible on carrying platform, the reference identification of setting containing direction is so that the heavy duty of standard model. If the 2. crystal orientation of unknown reference sample, obtain reference light by the scanning in height and sample direction every time.
For polycrystalline silicon substrate surface, due to the diversity in crystal orientation, the direction of its surface plane is disorderly and unsystematic, cannot form the regular structure that the direction of the silicon single crystal base as shown in Fig. 3 b with 3c is consistent. But, the silicon base of many silica-based solar cells substrate also comprises parallel with silicon base face with the intimate parallel face of very small portion, it is parallel with bulk silicon substrate plane that this part sample surfaces is plated anti-reflection film plane, same nearly vertical incidence is plated anti-reflection film plane to these faces parallel with silicon substrate by the detecting light beam of vertical silicon substrate plane incidence, this part reflection process is identical with the situation of smooth-flat-surface film with its modeling, on the whole, but the light beam that major part is incident on the plane of non-horizontal directions does not vertically return and enters detector. When the nearly vertical incidence of detecting light beam, use in theory and there is relatively small value aperture (NumericalAperture, N.A.) optical system can be avoided collecting the reflected signal of detecting light beam at sample surfaces non-horizontal surface preferably, and the reflection spectrum in the only face that collected specimens silicon base face is parallel. In the case, the reflected light of collection experienced by identical optical reflection process, thus ensures to adopt single modeling method, and then measures film thickness and optical constant accurately.
Similar with described silicon single crystal, introduce roughness factor concept, owing to the anti-reflection film on parallel surface, the silicon base face of minimum part is the part in whole detecting light beam detection area, and the reflected beam of other planes is not collected by control both optical numerical aperture. As shown in Figure 7, adopt smooth surfaces silicon single crystal as the relative reflectance of the measurement of the polycrystalline silicon solar substrate comprising 90nm silicon nitride anti-reflection film with reference to sample with by the luminance factor of the silica-base film structure comprising 90nm silicon nitride anti-reflection film of Modeling Calculation relatively, it is seen that the obvious impact of surfaceness. So can simplify and be interpreted as, the parallel surface merging in the silicon base face of the minimum part in polysilicon based solar battery substrate surface be smooth but and imperfect anti-reflection film sample, the ratio that the area of splicing plane accounts for whole detection area is ��, and namely �� * R represents the absolute reflectance part for the parallel surface anti-reflection film in the silicon base face of the minimum part in polysilicon based solar battery substrate surface. So, except setting anti-reflection film thickness and optical constant are variable, simultaneously by roughness factor �� (coefficient M, N are set as variable), equation is set up with the theoretical reflectivity R calculated in modeling setting situation, by the curve fitting process of Numerical regression, thickness, material optical constant and corresponding roughness factor �� (coefficient M, N) can be calculated.
If Fig. 8 is that the level and smooth monocrystalline silicon piece of polishing is as with reference to sample, during measurement, detecting light beam is with incident relative to overall polysilicon chip plane orthogonal, adds the measuring result of roughness factor �� in analytical model, and ordinate zou represents the absolute reflectance for sample. Visible modeling spectrum and measure spectrum obtain good consistence. When the polysilicon sample surfaces not comprising anti-reflection film using region, crystal orientation similar is as reference, the silicon base back that such as front measurement point is corresponding, similar to silicon single crystal situation; In the case, the impact that roughness causes better is cancelled, it is possible to than adopting the level and smooth monocrystalline silicon piece of polishing to form better measuring result, as shown in Figure 9.
Measuring result compares Fig. 8 and Fig. 9 and adopts the polysilicon not comprising anti-reflection film obviously to obtain better measurement effect as with reference to sample as seen, and coefficient M is close to 1. During actual measurement, the different polysilicon base reflection spectrum in some crystal orientation can be prestored, the fitting degree of the matching measurement spectrum polysilicon base reflection spectrum different from the dry crystal orientation prestored is traveled through during matching, choose the best conduct of fitting degree with reference to spectrum, and then obtain best measurement effect.
The present invention is by restriction detecting light beam optical numerical value aperture and gathers aperture, the reflection spectrum of the plane that selective measurement is parallel with sample bottom surface in uneven surface, reflection spectrum is analyzed further by introducing roughness factor �� Method Modeling, not only can effectively be applied to the measurement of silica-based solar cell, also can effectively be applied to the similar film comprising suede structure to measure, such as thin-film solar cells (thin-filmsolarcell) etc. Further, the single thin film that the measurable film number of plies of present method is not limited in example above.
Below in conjunction with Figure 10-21, the system realizing solar base plate film multitask measurement is described.
As shown in Figure 10, a kind of solar base plate film multitask measuring system of the present invention by measuring platform 1, optical fiber 2, light source 3, spectrograph 4, data line 5, computer 6, control cables 7 form. Computer 6 is connected with the XY motorized precision translation stage 1-2 measured in platform 1 by control cables 7, it is possible to control XY motorized precision translation stage 1-2 does XY translation; Computer 6 is connected with spectrograph 4 by data line 5, and gathers spectroscopic data by computer control; Described optical fiber 2 is " Y " shape optical fiber, and one end is connected with measurement platform 1, and another two ends are connected with spectrograph 4 with light source 3 respectively; Described data line 5 is connected with spectrograph 4, computer 6 respectively. Control cables 7 is connected with measurement platform 1, computer 6 respectively.
As shown in Figure 11, Figure 12, measure platform 1 and comprise base plate 1-1, XY motorized precision translation stage 1-2, substrate stage 1-3 and measuring head 1-4. Substrate stage 1-3 is arranged on XY motorized precision translation stage 1-2, and XY motorized precision translation stage 1-2 and measuring head 1-4 is arranged on base plate 1-1.
Described base plate 1-1 is rectangle base plate, and it has threaded hole, for installing XY motorized precision translation stage 1-2 and measuring head 1-4.
Described XY motorized precision translation stage 1-2 is the two-freedom location platform of driven by servomotor, is 90 degree by two linear motion axis and is formed by stacking, does X/Y plane motion by the control of computer 6.
As shown in figure 14, described substrate stage 1-3 is made up of disk 1-3-1 and pressing plate 1-3-2; Disk 1-3-1 is disc-shaped structure, and it is 126mm �� 126mm monocrystalline silicon substrate groove 1-3-3 that centre is provided with area, and monocrystalline silicon substrate groove 1-3-3 is square groove, dark 0.4mm; Being provided with the polycrystalline silicon substrate groove 1-3-4 that area is 166mm �� 166mm above monocrystalline silicon substrate groove 1-3-3, polycrystalline silicon substrate groove 1-3-4 is square groove, dark 0.2mm; The front of monocrystalline silicon substrate groove 1-3-3 and polycrystalline silicon substrate groove 1-3-4 is provided with a square tweezers groove 1-3-5, for tweezers gripping and placement silicon substrate; Monocrystalline silicon substrate groove 1-3-3 has 4 open holes 1-3-9; Being provided with 3 polysilicon reference sample groove 1-3-6 on the left of polycrystalline silicon substrate groove 1-3-4, for placing polysilicon reference sample, its height is contour with polycrystalline silicon substrate groove 1-3-4; The silicon single crystal reference sample groove 1-3-8 that two become 45 degree of angles with polycrystalline silicon substrate groove Quad Sides it is provided with on the upside of polycrystalline silicon substrate groove 1-3-4, being provided with 3 silicon single crystal reference sample groove 1-3-7 on the right side of polycrystalline silicon substrate groove 1-3-4, silicon single crystal reference sample groove 1-3-7 is consistent with the groove level of monocrystalline silicon substrate groove 1-3-3 with the groove level of silicon single crystal reference sample groove 1-3-8; Pressing plate 1-3-2 have 8 respectively with polysilicon reference sample groove 1-3-6, silicon single crystal reference sample groove 1-3-7 and silicon single crystal reference sample groove 1-3-8 with the use of, and by screw fixed reference sample.
As shown in Figure 15, Figure 16, described measuring head 1-4 is made up of columns assemblies 1-4-1, structure of fiber_optic assembly 1-4-2, transverse beam assembly 1-4-3.
As shown in Figure 17, Figure 18, described columns assemblies 1-4-1 is made up of column 1-4-1-1, switching part 1-4-1-2, axle 1-4-1-3, bearing 1-4-1-4, step cover 1-4-1-5, magnet 1-4-1-6, limited block 1-4-1-7. Column 1-4-1-1 is columnar structure, and upper middle side part has bearing mounting hole, and bearing mounting hole two ends have round bearing lid open holes, and step cover open holes is uniformly distributed along the circumference 6 threaded holes, is provided with 4 limited blocks and installs threaded holes outside bearing mounting hole; Having 4 open holess bottom column 1-4-1-1, square breach is arranged at these 4 open holes tops, facilitates bolt to install and provide spanner space; Switching part 1-4-1-2 is used for column 1-4-1-1 and is connected with base plate 1-1; Axle 1-4-1-3 installs bearing 1-4-1-4 in two ends respectively, and wears in the bearing mounting hole on column 1-4-1-1 top, and two bearing 1-4-1-4 are fixed on column 1-4-1-1 by two step cover 1-4-1-5 respectively; Having circular hole in the middle of step cover 1-4-1-5, axle 1-4-1-3 two ends are each passed through this circular hole, it is possible to rotate freely; Two end faces of axle 1-4-1-3 are respectively equipped with 4 threaded holes; Limited block 1-4-1-7 has two, is long strip shape structure, and there are two Long Circle countersunk screw open holess at middle part, and there is threaded hole at two ends; Limited block 1-4-1-7 is individually fixed in column 1-4-1-1 top by screw, it is positioned at outside column 1-4-1-1 bearing mounting hole, first limited block 1-4-1-7 vertically places, and the angle of the 2nd limited block 1-4-1-7 and first limited block 1-4-1-7 is 54.7 degree; The fixed position of limited block 1-4-1-7 can be finely tuned according to actual needs; Magnet 1-4-1-6 has two, and there is plastic overmold its outside, it may also be useful to can not producing particle in process, magnet 1-4-1-6 is fixed by screws on limited block 1-4-1-7 respectively.
As shown in figure 19, structure of fiber_optic assembly 1-4-2 is made up of arc support 1-4-2-1, mounting block 1-4-2-2, mounting block 1-4-2-3, briquetting 1-4-2-4. Arc support 1-4-2-1 is circular arc sheet metal part, and optical fiber 2 is around the outside of arc support 1-4-2-1, and is fixed by briquetting 1-4-2-4; Arc support 1-4-2-1 two ends are connected with mounting block 1-4-2-2 and mounting block 1-4-2-3 respectively.
As shown in figure 20, transverse beam assembly 1-4-3 is made up of crossbeam 1-4-3-1, optical fiber clamp 1-4-3-2, sonet card seat 1-4-3-3, handle 1-4-3-4, steel disc 1-4-3-5. Crossbeam 1-4-3-1 is beam-shaped structure, and there is a boss one end, and a circular hole is arranged at boss bottom, fixing for coordinating with axle 1-4-1-3, boss both sides have a little flange respectively, and this little flange is fitted spacing with limited block 1-4-1-7 respectively, fixedly mounts steel disc 1-4-3-5 respectively on the right side of this little flange; There is plastic overmold outside steel disc 1-4-3-5, coordinate with magnet 1-4-1-6, be the sticking power provided when measurement pattern switches; There is V shape opening on the right side of sonet card seat 1-4-3-3, it is fixed on one end of crossbeam 1-4-3-1 by screw; Have V shape opening on the left of optical fiber clamp 1-4-3-2, with sonet card seat 1-4-3-3 with the use of, for one end of fixed fiber 2.
As shown in Figure 15, Figure 16, the crossbeam 1-4-3-1 of transverse beam assembly 1-4-3 coordinates fixing with the axle 1-4-1-3 in columns assemblies 1-4-1; The mounting block 1-4-2-2 and axle 1-4-1-3 of structure of fiber_optic assembly 1-4-2 coordinates fixing, and mounting block 1-4-2-3 and crossbeam 1-4-3-1 is connected.
As shown in Figure 11, Figure 12, measuring head 1-4 is connected by switching part 1-4-1-2 and base plate 1-1; The direction of crossbeam 1-4-3-1 beam is parallel with the sense of rotation of axle 1-4-1-3; The direction of crossbeam 1-4-3-1 beam and the square of monocrystalline silicon substrate groove 1-3-3 while in 45 degree, when namely measuring, the direction of crossbeam 1-4-3-1 beam and monocrystalline silicon substrate is 45 degree.
As shown in figure 13, when carrying out monocrystalline silicon substrate measurement, pull handle 1-4-3-4 clockwise, the flange of crossbeam 1-4-3-1 side and limited block 1-4-1-7 are fitted.
If making the measuring system of the present invention tilt at measuring head 1-4 is 54.7 degree and when measuring head is vertical, measure light and can be directed at same point on X/Y plane, so, when polysilicon sample, if measuring head alignment polysilicon center, when then pulling measuring head for tilting 54.7 degree of state measurement monocrystal silicon samples, measuring head is still directed at monocrystal silicon sample center, it is possible to simplify the measurement point calibrating coordinates in measuring process. In addition, due to silicon single crystal and polysilicon reflective light intensity all with the measurement end face of optical fiber 2 to the distance of sample measurement point, namely operating distance is relevant, and reflected light signal is more strong, experiment accuracy is more high, then the operating distance of polysilicon and the operating distance of silicon single crystal generally should be made all to meet the strongest condition of sample reflection light intensity. The present invention is designed rotation center realized above-mentioned 2 points by suitable, and need not increase the translation stage in a z direction. Due to the structure influence of silicon substrate surface structure and fibre-optical probe, the operating distance of silicon single crystal and polysilicon is generally different, such as, when carrying out polycrystalline silicon solar substrate and measure, the measurement end face of optical fiber 2 at the most crystal silicon solar substrate measure the distance of plane 9, namely polysilicon measures distance 10 is 2.5mm; When carrying out mono-crystalline silicon solar substrate and measure, the measurement end face of optical fiber 2 measures the distance of plane 8 to mono-crystalline silicon solar substrate, and namely distance 11 measured by silicon single crystal is 6mm. In this case, as shown in figure 21, then the rotation center (see the point of O in figure) of optical axis without axle 1-4-1-3 of light is measured.
The measuring process that solar base plate film multitask measuring system provided by the invention is used for polycrystalline silicon substrate below is introduced:
When being loaded into polycrystalline silicon substrate, first XY motorized precision translation stage 1-2 is moved to and it is loaded into position, it may also be useful to polycrystalline silicon substrate is placed in polycrystalline silicon substrate groove 1-3-4 by tweezers, pull handle 1-4-3-4 and make measuring head vertical, select measurement pattern to be polycrystalline measurement pattern by software. Measuring process is:
Step 1, XY motorized precision translation stage 1-2 move automatically, polysilicon reference sample groove 1-3-6 (or monocrystal silicon sample groove 1-3-7 or 1-3-8 of polishing) alignment probe is arrived, automatically gathers reference spectra, obtain spectrum numerical value Ir��
Step 2, XY motorized precision translation stage move to the measurement point pre-set automatically, carry out one by one measuring collection polycrystalline silicon substrate spectrum, obtain spectrum numerical value I; When polycrystalline silicon substrate is measured, it is polycrystalline silicon substrate groove 1-3-4 scope that computer Lookup protocol translation stage moves scope.
Step 3, undertaken by computer calculating and (as how to calculate, had introduction, i.e. (I-I above-mentioned utilization in the method for reflective spectral measure polysilicon base solar surface filmd)/(Ir-Id)*Rr=R��=�� * R, repeats no more), draw the Map collection of illustrative plates of polycrystalline silicon substrate anti-reflection layer (subtract and return layer) thickness and optical constant N&K and corresponding roughness correction factor ��.
Step 4, measurement terminate, and XY motorized precision translation stage 1-2 re-moves to LoadPosition, it may also be useful to tweezers stretch into tweezers groove 1-3-5, gripping unloading polycrystalline silicon substrate.
Before solar base plate film multitask measuring system provided by the invention is used for monocrystalline silicon substrate measurement, when being loaded into monocrystalline silicon substrate, first XY motorized precision translation stage 1-2 is moved to and it is loaded into position, use tweezers that monocrystalline silicon substrate is placed in monocrystalline silicon substrate groove 1-3-3, pulling handle 1-4-3-4 makes measuring head inclination be 54.7 degree, selecting measurement pattern to be monocrystalline measurement pattern by software, measuring process is:
Step 1, XY motorized precision translation stage 1-2 move automatically, make silicon single crystal reference sample groove 1-3-8 be directed at measuring sonde, automatically gather reference spectra. Silicon single crystal reference sample groove 1-3-8 can insert the monocrystalline silicon substrate of polishing, is obtained the monocrystalline silicon substrate spectrum numerical value I of polishing by spectrometer measurementr, and by spectrograph by IrIt is sent to computer.
Step 2, XY motorized precision translation stage move to the measurement point pre-set automatically, carry out one by one measuring collection monocrystalline silicon substrate spectrum, obtain spectrum numerical value I; When monocrystalline silicon substrate is measured, it is monocrystalline silicon substrate groove 1-3-3 scope that computer Lookup protocol translation stage moves scope. This step measures monocrystalline silicon substrate, and obtains the spectrum numerical value I of monocrystalline silicon substrate by spectrograph, and by spectrograph, I is sent to computer.
Step 3, undertaken by computer calculating and (as how to calculate, had introduction, i.e. (I-I above-mentioned utilization in the method for reflective spectral measure silicon single crystal base solar surface filmd)/(Ir-Id)*Rr=R��=�� * R, repeats no more), draw the Map collection of illustrative plates of monocrystalline silicon substrate anti-reflection film thickness and optical constant N&K and corresponding roughness correction factor ��.
Step 4, measurement terminate, and XY motorized precision translation stage 1-2 re-moves to LoadPosition, it may also be useful to tweezers stretch into tweezers groove 1-3-5, gripping unloading monocrystalline silicon substrate.
During the measurement of silicon single crystal, the silicon single crystal of polishing can also be used as reference sample, then now, only need to when measuring reference sample, moving handle 1-4-3-4 makes measuring head vertical, moves handle 1-4-3-4 when measuring mono-crystalline silicon solar sample and makes measuring head tilt to be 54.7 degree to realize.
It should be noted last that, above embodiment is only in order to illustrate the technical scheme of the present invention and unrestricted, although with reference to example to invention has been detailed explanation, it will be understood by those within the art that, the technical scheme of the present invention can be modified or equivalent replacement, and not departing from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of the right of the present invention.
Claims (13)
1. a solar base plate film multitask measuring system, it is characterised in that, comprising:
Measure platform, light source, for obtaining spectrograph, the computer of brilliant silicon substrate spectrum numerical value and brilliant silicon reference sample spectrum numerical value;
Described measurement platform can place brilliant silicon substrate and brilliant silicon reference sample simultaneously, and in described measurement platform, incident light beam strikes angle can adjust;
Described computer is connected with described measurement platform by control cables; Described computer is connected with described spectrograph by data line, receive brilliant silicon substrate spectrum numerical value and brilliant silicon reference sample spectrum numerical value, and according to the thickness of brilliant silicon substrate spectrum numerical value and the brilliant silicon substrate of brilliant silicon reference sample spectrum numerical evaluation, material optical constant and corresponding roughness correction factor ��; Described measurement platform is connected with described light source and spectrograph respectively by " Y " shape optical fiber; Described measurement platform comprises:
Base plate, XY motorized precision translation stage, substrate stage, measuring head;
Described substrate stage is arranged on described XY motorized precision translation stage; Described XY motorized precision translation stage and described measuring head are arranged on described base plate;
Described measurement platform makes incident angle of light can switch between 0 degree and 54.7 degree by described measuring head;
Described XY motorized precision translation stage is two-freedom location platform, and does the planar motion of X-direction or Y-direction by the control of described computer.
2. solar base plate film multitask measuring system according to claim 1, it is characterised in that, described substrate stage comprises:
Disk, multiple pressing plate; Described disk is provided with monocrystalline silicon substrate groove; It is provided with polycrystalline silicon substrate groove above described monocrystalline silicon substrate groove; Described polycrystalline silicon substrate groove surrounding is provided with one or more polysilicon reference sample groove, and one or more silicon single crystal reference sample groove; Described pressing plate uses with described polysilicon reference sample groove and silicon single crystal reference sample slot fit with fixed reference sample respectively; The groove level of described silicon single crystal reference sample groove is consistent with the groove level of monocrystalline silicon substrate groove; The groove level of described polysilicon reference sample groove is consistent with the groove level of polycrystalline silicon substrate groove.
3. solar base plate film multitask measuring system according to claim 2, it is characterized in that: described polysilicon reference sample groove is arranged on the left of polycrystalline silicon substrate groove, described silicon single crystal reference sample groove is arranged on the right side of polycrystalline silicon substrate groove, and, also being provided with the silicon single crystal reference sample groove becoming 45 degree of angles with polycrystalline silicon substrate groove Quad Sides on the upside of described polycrystalline silicon substrate groove, the front of described monocrystalline silicon substrate groove and polycrystalline silicon substrate groove is provided with one for tweezers gripping and the tweezers groove placing monocrystalline silicon substrate or polycrystalline silicon substrate.
4. solar base plate film multitask measuring system according to claim 2, it is characterised in that:
Described monocrystalline silicon substrate groove is square groove, and its length of side is 126mm, and the degree of depth is 0.4mm;
Described polycrystalline silicon substrate groove is square groove, and its length of side is 166mm, and the degree of depth is 0.2mm.
5. solar base plate film multitask measuring system according to claim 1, it is characterised in that, described measuring head comprises:
Columns assemblies, structure of fiber_optic assembly, transverse beam assembly;
One end of described structure of fiber_optic assembly is connected by one end of described columns assemblies with described transverse beam assembly, and the other end is connected with the other end of transverse beam assembly.
6. solar base plate film multitask measuring system according to claim 5, it is characterised in that, described columns assemblies comprises:
Column, switching part, axle, bearing, step cover, the first magnet, the 2nd magnet, the first limited block and the 2nd limited block;
Described switching part is connected with described column;
Described first limited block, the 2nd limited block are all fixed on described column top, and are positioned at the outside of the bearing mounting hole of column; Described first magnet is fixedly connected with described first limited block; Described 2nd magnet is fixedly connected with described 2nd limited block;
Described bearing is installed at described axle two ends respectively, and wears in the bearing mounting hole on described column top, and bearing is fixed on column by described step cover respectively.
7. solar base plate film multitask measuring system according to claim 6, it is characterised in that:
Described column is columnar structure, and upper middle side part has described bearing mounting hole; Described column bottom has multiple open holes, and square breach is arranged at open holes top; Described column is connected by described switching part with described base plate;
Described bearing mounting hole two ends have round bearing lid open holes, outside is provided with multiple described limited block and installs threaded hole; Described step cover open holes is uniformly distributed along the circumference some threaded holes;
Having offered circular hole in the middle of described step cover, axle two ends are each passed through this circular hole, it is possible to rotate freely;
Two end faces of described axle are respectively equipped with threaded hole.
8. solar base plate film multitask measuring system according to claim 6, it is characterised in that:
Described first limited block and the 2nd limited block are long strip shape structure, and there are two Long Circle countersunk screw open holess at middle part, and there is threaded hole at two ends; Described first limited block and the 2nd limited block are individually fixed in column top by screw, are positioned at outside column bearing mounting hole; First limited block is vertically placed, and the angle between the 2nd limited block and first limited block is 54.7 degree; First magnet is fixed by screws on limited block, and the 2nd magnet is fixed by screws on the 2nd limited block.
9. solar base plate film multitask measuring system according to claim 5, it is characterised in that, described structure of fiber_optic assembly comprises:
Arc support, mounting block, briquetting;
Described arc support is circular arc part, and described optical fiber is around the outside of arc support, and is fixed by described briquetting; Described arc support two ends are connected with described mounting block respectively.
10. solar base plate film multitask measuring system according to claim 6, it is characterised in that, described transverse beam assembly comprises:
Crossbeam, optical fiber clamp, sonet card seat, handle, steel disc;
Described crossbeam is beam-shaped structure, and there is a boss one end; A circular hole is arranged at boss bottom, and boss both sides have a little flange respectively, and described little flange is spacing with the first limited block and the laminating of the 2nd limited block respectively, fixedly mounts described steel disc respectively on the right side of this little flange; There is plastic overmold outside described steel disc and coordinate with the first magnet and the 2nd magnet; There is V shape opening on the right side of described sonet card seat and it is fixed on one end of crossbeam; V shape opening is had on the left of described optical fiber clamp; Described handle is fixed on described crossbeam;
The crossbeam of described transverse beam assembly coordinates fixing with described axle; The mounting block of described structure of fiber_optic assembly coordinates fixing with axle, and another mounting block of structure of fiber_optic assembly and crossbeam are connected;
The direction of described crossbeam beam is parallel with the sense of rotation of axle; The direction of crossbeam beam and the square of monocrystalline silicon substrate groove while in 45 degree.
11. solar base plate film multitask measuring systems according to claim 6, it is characterised in that, the measuring junction of described optical fiber and the rotation center of described axle have a deviation, measure the rotation center of optical axis without axle of light.
The 12. solar base plate film multitask measuring systems according to the arbitrary item of claim 3-11, it is characterised in that:
When carrying out polycrystalline silicon solar substrate and measure, the distance of the measurement end face of described optical fiber crystal silicon solar substrate measurement point at the most is 2.5mm.
The 13. solar base plate film multitask measuring systems according to the arbitrary item of claim 3-11, it is characterised in that:
When carrying out mono-crystalline silicon solar substrate and measure, the measurement end face of described optical fiber is 6mm to the distance of mono-crystalline silicon solar substrate measurement point.
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| CN101261116A (en) * | 2008-04-20 | 2008-09-10 | 华中科技大学 | Thin film thickness and refractivity optical measurement method and its device |
| WO2011043930A1 (en) * | 2009-10-07 | 2011-04-14 | Nanometrics Incorporated | Scatterometry measurement of asymmetric structures |
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| CN101261116A (en) * | 2008-04-20 | 2008-09-10 | 华中科技大学 | Thin film thickness and refractivity optical measurement method and its device |
| WO2011043930A1 (en) * | 2009-10-07 | 2011-04-14 | Nanometrics Incorporated | Scatterometry measurement of asymmetric structures |
| CN102455511A (en) * | 2010-10-28 | 2012-05-16 | 中国科学院微电子研究所 | Imaging system using plane mirror to integrate lights and optical measuring device |
| CN102564588A (en) * | 2010-12-17 | 2012-07-11 | 北京智朗芯光科技有限公司 | Vertical incidence broadband spectrograph using optical fiber bundle for light splitting and an optical measurement system |
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