CN1035737C - 一种掺钬的高临界电流密度高磁通针扎力的高温超导体 - Google Patents
一种掺钬的高临界电流密度高磁通针扎力的高温超导体 Download PDFInfo
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- CN1035737C CN1035737C CN93112818A CN93112818A CN1035737C CN 1035737 C CN1035737 C CN 1035737C CN 93112818 A CN93112818 A CN 93112818A CN 93112818 A CN93112818 A CN 93112818A CN 1035737 C CN1035737 C CN 1035737C
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- 239000002887 superconductor Substances 0.000 title claims abstract description 38
- 229910052689 Holmium Inorganic materials 0.000 claims description 6
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 5
- 239000010949 copper Substances 0.000 abstract description 19
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- 229910052761 rare earth metal Inorganic materials 0.000 abstract description 10
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- 230000007704 transition Effects 0.000 abstract description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 abstract description 2
- 239000005751 Copper oxide Substances 0.000 abstract description 2
- 229910000431 copper oxide Inorganic materials 0.000 abstract description 2
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- 230000000694 effects Effects 0.000 description 6
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- 238000009432 framing Methods 0.000 description 5
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- 238000002360 preparation method Methods 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- 208000012266 Needlestick injury Diseases 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 241000954177 Bangana ariza Species 0.000 description 1
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- 125000004430 oxygen atom Chemical group O* 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
本发明涉及一种掺钬的高临界电流密度高磁通针扎力的高温超导体，其特征在于组成为Y(1-X)HoXBa2Cu3O7-δ，本发明利用稀土元素部分取代Y使得铜氧化物超导体Y-123局域晶格失配形成的应力场对磁通线的有效作用，在不引入其它非超导缺陷而且不改变Y-123结构框架和超导性的前题下，大幅度提高临界电流密度，达100%以上，并且具有较高的超导转变温度，Tc～90K，此技术简单，有规模生产和使用的前景。
Description
本发明涉及一种掺杂的超导体，它特别适用于掺钬的高临界电流密度高磁通针扎力的高温超导体。
超导体中临界电流密度依赖于磁通针扎中心对磁通线的针扎力的大小。60年代以来，在传统超导体的研究中，已经得到当钉中心的尺寸接近于超导体的相干长度时，针扎强度达到最大值。对于传统超导体，相干长度在1000A数量级上，这个长度与晶粒尺寸相当。因此，一些研究表明在传统的A-15超导体中对磁通线的针扎主要来自晶界。在60-70年代，有人研究了传统超导体中晶体缺陷(如位错和夹杂等)引发的应力场对磁通线的针扎作用，但都是在传统超导体相干长度(1000A)尺度上的研究结果。而在高Tc超导体中，相干长度非常短只在10A数量级上，钉扎中心的尺寸只相当于一个晶胞大小。这样比起传统超导体，高Tc氧化物超导体的针扎更加局域化。在传统超导体中一些能成为有效的针扎中心的大尺寸缺陷(象晶界，大块夹杂等)，在氧化物超导体中可能不再是有效的针扎中心。因此有人提出了弥散的211相、辐照缺陷、孪晶界、氧缺位和螺形位错等等有可能成为氧化物超导体中的针扎中心。但是，在氧化物超导体中有控制地引入上述晶格缺陷在实验室和在工业应用中都存在不同困难。首先，上述缺陷的引入破坏超导体的晶格结构和超导的单相性；另外，这些缺陷有可能退化为弱联接对超导有不利影响；特别是在实际应用中和工业生产中，很难做到规模生产。
未检索到有关的专利文献。现将已报导的有关涉及传统超导体应力的磁通针扎问题和氧化物超导体中非超导缺陷(如211相、辐照缺陷、孪晶界、氧缺位和螺形位错等)的磁通针扎问题的研究论文简列如下：(1)A.M.Campbell and J.E.Evetts，Adv.Phys.21，199(1972).(2)G.J.Van Gurp，Philips Res.Rep.22，10(1967).(3)R.M.Scanlan，W.A.Fietz，E.F.Koch，J.Appl.Phys.46，2244(1975).(4)W.W.Webb，Phys.Rev.Lett.11，191(1963).(5)L.E.Toth and I.P.Pratt，Appl.Phys.Lett.4，75(1964).(6)G.W.Crabtree，W.K.Kwok，and A.Umezawa，in：QuantumField Theory as an Interdisciplinary Basis，editedby F.C.Khanna，H.Umezawa，G.Kunstatter，and H.C.lee(World Scientuific，1988).(7)M.Murakami，S.Gotoh，H.Fujimoto，K.Yamaguchi，N.Koshizuka，and S.Tanaka，Supercon.Sci.Technol.4，543(1991).(8)H.W.Weber and G.W.Crabtree，in：Studies of High Temperature Superconductors，edited by A.V.Narlikar(NovaScience，New York，1991).(9)W.K.Kwok，U.Welp，G.W.Crabtree，K.G.Vandervoort，R.
Hulscher，and J.Z.Liu，Phys.Rev.Lett.64，966(1990).(10)E.M.Chudnovsky，Phys.Rev.Lett.65，3060(1990).(11)B.Batlogg，Physica C185-189，xviii(1991).
本发明的目的在于克服上述的缺点和不足，针对高Tc氧化物超导体具有有别于传统超导体的相干长度很短的特征，发明了在Y-123超导体中用不同的稀土元素部分替代Y的方法，在不引入其它非超导缺陷而且不改变Y-123结构框架和超导电性的前提下，较大幅度地提高临界电流密度。
本发明的目的是这样实现的：在Y-123超导体中用不同的稀土元素将35-50％的Y元素替代得到Y(1-x)RExBa3Cu3O7-δ(x＝0.35-0.5)超导体，其临界电流密度比YBa2Cu3O7-δ有大幅度地提高。此技术的特点是充分利用了不同稀土元素的123超导相结构相似但晶格尺寸不同的特点，在不改变Y-123结构框架和超导电性的前提下，用掺杂其它稀土元素部分替代Y的方法，利用超导体YBa2Cu3O7-δ和超导体REBa2Cu3O7-δ晶格失配产生的应力场有效地对磁通线起针扎作用，大幅度地提高临界电流密度而无需引入其它非超导缺陷。
本发明的掺钬的高临界电流密度高磁通针扎力的高温超导体的组成式如下：
Y(1-x)HoxBa2Cu3O7-δ；
其中X＝0.3 5～0.5，7-δ为掺钬超导体的氧原子含量，δ的变化范围在0.5-1。
在YBa2Cu3O7-δ用稀土Ho部分替代Y得到超导体Y(1-x)HoxBa2Cu3O7-δ(x＝0.3 5-0.5)。实验结果表明，此超导体的结构仍保持Y-123结构框架和较高的超导转变温度(～90K)。HoBa2Cu3O7-δ的晶格参数与YBa2Cu3O7-δ差别适中，细小的HoBa2Cu3O7-δ晶粒更加弥散地分布，而很少富集。此时晶格失配引发的应力场对磁通线有较强的针扎作用，这一点我们已在理论上给予证实。
本发明的特点在于：
1.首先在理论上用首创的有效缺陷模型解决了由于掺杂其它稀土元素造成样品局域晶格失配所形成的应力场分布的问题，并在此基础上，得到了此时的应力场对磁通线的针扎力(与传统超导体中缺陷应力场针扎力同数量级)，证实了应力场可以成为有效的磁通针扎中心。
2.利用稀土元素部分替代Y使得铜氧化物超导体Y-123中局域晶格失配形成的应力场对磁通线的有效针扎作用，在不引入其它非超导缺陷而且不改变Y-123结构框架和超导性的前题下，大幅度提高了临界电流密度。
3.具有较高的超导转变温度，Tc～90K。
4.此技术简单，有规模生产和使用的前景。
下面结合实施例1至3和附图1对本发明做详细说明
附图1：Y(1-x)HoxBa2Cu8O7-δ体系中，Ho掺杂浓度x与
临界电流密度的关系。
实施例1
在YBa2Cu3O7-δ中用稀土Ho部份替代Y得到超导体Y(1-x)HoxBa2Cu3O7-δ其中X＝0.35。选用稀土Ho是利用了Ho和Y在原子尺寸上的差异以及YBa2Cu3O7-δ和HoBa2Cu3O7-δ晶格参数差别适中，Ho掺杂造成的晶格失配引发的应力场对磁通线有较强的针扎作用，从而大幅度提高临界电流，掺杂导致的应力针扎中心对单位长度磁通线的针扎力可达8.55×10-2dyn/cm。采用通常的制备工艺和烧制温度的条件下，Ho掺杂替代Y后，临界电流密度Jc(x)有明显提高，比没有掺杂的YBa2Cu3O7-δ能提高临界电流密度85％，此时超导样品的结构仍保持Y-123结构框架和较高的超导温度，Tc～90K，无须引入其他非超导相作为针扎中心。
实施例2
所需各元素配比和制备工艺如实施例1，其中X＝0.4，掺杂导致的应力针扎中心对单位长度磁通线的针扎力可达8.55×10-2dyn/cm，比没掺杂的YBa2Cu3O7-δ能提高临界电流密度100％以上，Tc～90K。
实施例3
所需各元素配比和制备工艺如实施例1，其中x＝0.5，掺杂导致的应力针扎中心对单位长度磁通线的针扎力可达8.55×10-2dyn/cm，比没掺杂的YBa2Cu4O7-δ能提高临界电流密度8 0％，Tc～90K。
Claims (1)
1.一种掺钬的高临界电流密度高磁通针扎力的高温超导体，其特征在于组成为：
Y(1-x)HoxBa2Cu3O7-δ；
其中X＝0.3 5-0.5。
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| CN1842878B (zh) * | 2003-08-29 | 2011-04-06 | 独立行政法人科学技术振兴机构 | 超导膜及其制造方法 |
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| CN102157246B (zh) * | 2010-12-12 | 2012-08-15 | 西北有色金属研究院 | 一种涂层导体多层结构超导膜及其制备方法 |
| EP3176793A4 (en) * | 2014-11-05 | 2018-04-11 | Fujikura Ltd. | Oxide superconductor, superconducting wire, and manufacturing method therefor |
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| J APPL PHYS.46 1975.1.1 RMSCANLAN,W A FIRTZ,E.F KOCH * |
| J APPL PHYS.46 1975.1.1 RMSCANLAN,W A FIRTZ,E.F KOCH;PHYSICA CONDESER XVIII 1991.1.1 B BATLOGG * |
| PHYSICA CONDESER XVIII 1991.1.1 B BATLOGG * |
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