CN103570353A - Process method for recrystallized silicon carbide and parts - Google Patents

Abstract

The invention discloses a process method for recrystallized silicon carbide and parts. The process method comprises the following steps: (1) mixing silicon carbide powder, carbon powder and silicon, adding a binding agent, and uniformly mixing to obtain a mixed size, wherein the mixed size comprises the following components by percent: 50-70 percent of silicon carbide powder with the granularity of 40-120 meshes, 15-40 percent of silicon carbide powder with the granularity of 1200-3000 meshes, 5-15 percent of silicon powder with the granularity of 200-400 meshes, 5-15 percent of carbon powder with the granularity of 200-400 meshes and 1.5-3 percent of binding agent; (2) adopting a compression molding process, and processing the mixed size into a part blank; (3) putting the part blank on a kiln car coated with a mixture of the silicon powder and carbon powder with the set thickness, sintering the powder in a vacuum induction furnace at a sintering temperature of 1400-1700 DEG C, performing heat preservation for 2-5 hours, raising the temperature to 2500 percent, performing heat preservation for 5-10 hours, and performing furnace cooling to room temperature, thereby obtaining the recrystallized silicon carbide and parts. The process method is high in production efficiency, the production cost of the recrystallized silicon carbide and parts is effectively reduced, and the application field is widened.

Description

The processing method of recrystallized silicon carbide and product

Technical field

The present invention relates to stupalith technology, particularly relate to the processing method of recrystallized silicon carbide and product.

Background technology

At present, recrystallized silicon carbide and product technique, to mix with silicon carbide micro-powder compared with the silicon carbide of coarsness, add bonding agent slurrying moulding in model again, under hot conditions in vacuum induction furnace more than 2300 degree, make silicon carbide micro-powder evaporation and sinter recrystallized silicon carbide into the silicon carbide cohesion of coarsness, recrystallized silicon carbide purity is high, there is excellent mechanical behavior under high temperature, can under the high temperature of 1600 ℃, use, the ability with good thermal conduction and resistance to high temperature oxidation, its over-all properties is obviously better than common carbofrax material.Prior art recrystallized silicon carbide is produced silicon carbide micro-powder used and is gone entirely to rely on import, and production cost is high, and the high application of price is restricted.

Summary of the invention

The technical problem to be solved in the present invention is, for the deficiencies in the prior art, provides the processing method of a kind of recrystallized silicon carbide and product, effectively reduces the production cost of recrystallized silicon carbide and product, broadened application field.

The technical scheme adopting is:

The processing method of recrystallized silicon carbide and product, comprises following processing step:

(1) sic powder is divided and mixed with carbon dust, silicon, then add bonding agent and mix to obtain mixed slurry, its compound per-cent is as follows:

40-120 order sic powder 50-70%;

1200-3000 order silicon carbide powder 15-40%;

200-400 order silica flour 5-15%;

200-400 order carbon dust 5-10%;

Bonding agent 1.5-3%;

(2) adopt die press technology for forming, described mixed slurry is processed into product blank;

(3) product blank being placed in to brushing has on the silica flour of thickness of setting and the kiln car of carbon dust compound, and pack sintering in vacuum induction furnace into, sintering schedule 1400-1700 ℃, insulation 2-5 hour, be warming up to again 2500%, insulation 5-10 hour, cools to room temperature with the furnace, obtains recrystallized silicon carbide and product.

Production efficiency of the present invention is high, effectively reduces the production cost of recrystallized silicon carbide and product, has expanded Application Areas.

Embodiment

Embodiment mono-

The processing method of recrystallized silicon carbide and product, comprises following processing step:

Sic powder is divided and mixed with carbon dust, silicon, then add bonding agent and mix to obtain mixed slurry, its compound per-cent is as follows: 40-120 order sic powder 65%; 1200-3000 order silicon carbide powder 20%; 200-400 order silica flour 7%; 200-400 order carbon dust 6%; Bonding agent 2%; Adopt die press technology for forming, described mixed slurry is processed into product blank; Product blank is placed in to brushing and has on the silica flour of thickness of setting and the kiln car of carbon dust compound, and pack sintering in vacuum induction furnace into, 1600 ℃ of sintering schedules, be incubated 3 hours, then be warming up to 2500%, be incubated 8 hours, cool to room temperature with the furnace, obtain recrystallized silicon carbide and product.

Embodiment bis-

Sic powder is divided and mixed with carbon dust, silicon, then add bonding agent and mix to obtain mixed slurry, its compound per-cent is as follows: 40-120 order sic powder 60%; 1200-3000 order silicon carbide powder 22%; 200-400 order silica flour 10%; 200-400 order carbon dust 10%; Bonding agent 2%; Adopt die press technology for forming, described mixed slurry is processed into product blank; Product blank is placed in to brushing and has on the silica flour of thickness of setting and the kiln car of carbon dust compound, and pack sintering in vacuum induction furnace into, 1500 ℃ of sintering schedules, be incubated 4 hours, then be warming up to 2500%, be incubated 6 hours, cool to room temperature with the furnace, obtain recrystallized silicon carbide and product.

Embodiment tri-

Sic powder is divided and mixed with carbon dust, silicon, then add bonding agent and mix to obtain mixed slurry, its compound per-cent is as follows: 40-120 order sic powder 55%; 1200-3000 order silicon carbide powder 30%; 200-400 order silica flour 6%; 200-400 order carbon dust 6%; Bonding agent 3%; Adopt die press technology for forming, described mixed slurry is processed into product blank; Product blank is placed in to brushing and has on the silica flour of thickness of setting and the kiln car of carbon dust compound, and pack sintering in vacuum induction furnace into, 1650 ℃ of sintering schedules, be incubated 3 hours, then be warming up to 2500%, be incubated 7 hours, cool to room temperature with the furnace, obtain recrystallized silicon carbide and product.

Claims (1)

1. the processing method of recrystallized silicon carbide and product, is characterized in that comprising following processing step:

(1) sic powder is divided and mixed with carbon dust, silicon, then add bonding agent and mix to obtain mixed slurry, its compound per-cent is as follows:

40-120 order sic powder 50-70%;

1200-3000 order silicon carbide powder 15-40%;

200-400 order silica flour 5-15%;

200-400 order carbon dust 5-10%;

Bonding agent 1.5-3%;

(2) adopt die press technology for forming, described mixed slurry is processed into product blank;

(3) product blank being placed in to brushing has on the silica flour of thickness of setting and the kiln car of carbon dust compound, and pack sintering in vacuum induction furnace into, sintering schedule 1400-1700 ℃, insulation 2-5 hour, be warming up to again 2500%, insulation 5-10 hour, cools to room temperature with the furnace, obtains recrystallized silicon carbide and product.