CN103560172A - Method for preparing high conductivity polycrystalline silicon thin film - Google Patents
Method for preparing high conductivity polycrystalline silicon thin film Download PDFInfo
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- CN103560172A CN103560172A CN201310542462.1A CN201310542462A CN103560172A CN 103560172 A CN103560172 A CN 103560172A CN 201310542462 A CN201310542462 A CN 201310542462A CN 103560172 A CN103560172 A CN 103560172A
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- polycrystalline silicon
- sputter
- polysilicon
- polysilicon membrane
- high conductivity
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000010409 thin film Substances 0.000 title abstract description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 24
- 239000010439 graphite Substances 0.000 claims abstract description 24
- 238000004544 sputter deposition Methods 0.000 claims abstract description 24
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 13
- 229920005591 polysilicon Polymers 0.000 claims description 45
- 239000012528 membrane Substances 0.000 claims description 27
- 150000001721 carbon Chemical group 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000002994 raw material Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a method for preparing a high conductivity polycrystalline silicon thin film, and belongs to the technical field of polycrystalline silicon thin film solar cells. The method comprises the steps that polycrystalline silicon and graphite are sputtered on a foreign substrate based on magnetron sputtering, and the polycrystalline silicon thin film mixed with certain carbon content is prepared. Therefore, the electrical conductivity of the polycrystalline silicon thin film can be improved. The method is easy to operate and convenient to control, the carbon content in the polycrystalline silicon is controlled by controlling the time of a deposition thin film, the substrate temperature, sputtering power, gas flow, sputtering pressure and the like, and then the conductivity of the polycrystalline silicon thin film is controlled and changed.
Description
Technical field
The invention belongs to polysilicon thin-film solar battery technical field, be specifically related to a kind of magnetron sputtering cosputtering polysilicon and graphite-made of utilizing for the method for high conductivity polysilicon membrane.
Background technology
In recent years, being on the rise of energy crisis and environmental pollution greatly promoted developing rapidly of photovoltaic industry.Solar energy is one of inexhaustible, nexhaustible clean, regenerative resource.Therefore, countries in the world have all given great attention to the exploitation of solar energy aspect.Along with the continuous expansion of solar cell application, construction and the use of extensive ultra-large solar power plant, highlight solar cell Cost Problems day by day, and supply falls short of demand for raw material.Thin film solar cell arises at the historic moment.The conventional solar cells of comparing, thin film solar cell has following advantages: (1) absorbed layer material has the higher absorption coefficient of light, and therefore, the film of micron order thickness is enough to absorb most solar energies, has saved raw-material consumption; (2) adopt low temperature thin film technology of preparing, significantly reduce energy consumption, shorten the energy recovery phase; (3) materials and devices preparation can synchronously complete, and is convenient to large area, automation and serialization and produces; (4) more can prepare on as cheap flexible substrate such as metal forming, plastics, greatly improve the quality of device than power, at special dimensions such as military affairs with having broad application prospects in power-supply system.
Polysilicon thin-film solar battery is at present generally acknowledged high efficiency, the desirable solar cell of low energy consumption, there is stable performance, nontoxic, price is low, can large area deposition etc. advantage, in addition, element silicon is extensively present on the earth and (in the earth's crust, approximately contains 27.6%), abundant raw materials, has more superior status than other hull cells (copper indium diselenide (CIS) and cadmium sulfide (CdTe) etc.).Along with falling into the development of light technology, charge carrier constraint technology and passivating technique, can prepare the polysilicon thin-film solar battery of Cheap highly effective.
Summary of the invention
The object of the present invention is to provide a kind of simple method to adulterate to polysilicon membrane, thereby improve the conductivity of polysilicon membrane.
A method of preparing high conductivity polysilicon membrane, utilizes the common sputter polysilicon of magnetron sputtering technique and graphite, prepares the polysilicon membrane doped with carbon, improves the conductivity of polysilicon membrane, comprises the steps:
Step 1: choose foreign substrate;
Step 2: utilize magnetron sputtering apparatus sputter polysilicon and graphite simultaneously, wherein polycrystalline silicon target radio-frequency power supply sputter, graphite target DC power supply sputter;
Step 3: after sputter completes, naturally cool to room temperature, obtain the polysilicon membrane doped with carbon.
Described foreign substrate is ganoid insulating material.
Described foreign substrate is pottery, glass or quartz.
While utilizing magnetron sputtering while sputter polysilicon and graphite, fixedly the sputtering power of polycrystalline silicon target, regulates the sputtering power of graphite target, thereby obtains different doping contents.
The doping content of carbon is 10
16-10
20cm
-3, in every cubic centimetre of polysilicon membrane, carbon atom number is 10
16-10
20.
Beneficial effect of the present invention: method of the present invention is utilized magnetron sputtering cosputtering polysilicon and graphite, just has certain carbon doping in resulting polysilicon membrane, thereby has improved the conductivity of polysilicon membrane.Method of the present invention is simple to operate, is convenient to control, and controls the change of carbon content in polysilicon by controlling the time, underlayer temperature, sputtering power, gas flow, sputtering pressure etc. of deposit film, thus the conductivity of control break polysilicon membrane.
Accompanying drawing explanation
Fig. 1 is for utilizing magnetron sputtering cosputtering polysilicon and graphite schematic diagram;
Wherein: 1-polycrystalline silicon target, 2-graphite target, 3-foreign substrate.
Embodiment
In order to further illustrate technology of the present invention and feature, below in conjunction with accompanying drawing, the present invention is further illustrated.
Shown in Fig. 1, a kind of method of preparing high conductivity polysilicon membrane, comprises the steps:
Step 1: choose a kind of suitable foreign substrate;
Step 2: utilize magnetron sputtering apparatus sputter polysilicon and graphite simultaneously, wherein polycrystalline silicon target radio-frequency power supply sputter, graphite target DC power supply sputter;
Step 3: after sputter completes, naturally cool to room temperature, obtain the polysilicon membrane doped with certain carbon.
Carrying out as stated above instantiation is described as follows:
Step 1: select ceramic wafer as foreign substrate;
Step 2: utilize magnetron sputtering sputter polysilicon and graphite simultaneously.Wherein polycrystalline silicon target radio-frequency power supply sputter, sputtering power is 200W, graphite target DC power supply sputter, sputtering power is 30W, and argon gas flow is 80sccm, and sputtering pressure is 0.8Pa, and sputtering time is 3h; Underlayer temperature is 500 ℃;
Step 3: after sputter completes, naturally cool to room temperature, obtain the polysilicon membrane of high conductivity.
Step 1: select ceramic wafer as foreign substrate;
Step 2: utilize magnetron sputtering sputter polysilicon and graphite simultaneously.Wherein polycrystalline silicon target radio-frequency power supply sputter, sputtering power is 200W, graphite target DC power supply sputter, sputtering power is 50W, and argon gas flow is 80sccm, and sputtering pressure is 0.8Pa, and sputtering time is 3h; Underlayer temperature is 600 ℃;
Step 3: after sputter completes, naturally cool to room temperature, obtain the polysilicon membrane of high conductivity.
Step 1: select quartzy as foreign substrate;
Step 2: utilize magnetron sputtering sputter polysilicon and graphite simultaneously.Wherein polycrystalline silicon target radio-frequency power supply sputter, sputtering power is 150W, graphite target DC power supply sputter, sputtering power is 40W, and argon gas flow is 60sccm, and sputtering pressure is 0.5Pa, and sputtering time is 5h; Underlayer temperature is 700 ℃;
Step 3: after sputter completes, naturally cool to room temperature, obtain the polysilicon membrane of high conductivity.
Embodiment 4
Step 1: select quartzy as foreign substrate;
Step 2: utilize magnetron sputtering sputter polysilicon and graphite simultaneously.Wherein polycrystalline silicon target radio-frequency power supply sputter, sputtering power is 150W, graphite target DC power supply sputter, sputtering power is 60W, and argon gas flow is 60sccm, and sputtering pressure is 0.5Pa, and sputtering time is 5h; Underlayer temperature is 800 ℃;
Step 3: after sputter completes, naturally cool to room temperature, obtain the polysilicon membrane of high conductivity.
Claims (5)
1. a method of preparing high conductivity polysilicon membrane, is characterized in that, utilizes the common sputter polysilicon of magnetron sputtering technique and graphite, prepares the polysilicon membrane doped with carbon, improves the conductivity of polysilicon membrane, comprises the steps:
Step 1: choose foreign substrate;
Step 2: utilize magnetron sputtering apparatus sputter polysilicon and graphite simultaneously, wherein polycrystalline silicon target radio-frequency power supply sputter, graphite target DC power supply sputter;
Step 3: after sputter completes, naturally cool to room temperature, obtain the polysilicon membrane doped with carbon.
2. the method for preparing high conductivity polysilicon membrane according to claim 1, is characterized in that, described foreign substrate is ganoid insulating material.
3. the method for preparing high conductivity polysilicon membrane according to claim 2, is characterized in that, described foreign substrate is pottery, glass or quartz.
4. the method for preparing high conductivity polysilicon membrane according to claim 1, it is characterized in that, utilize magnetron sputtering simultaneously when sputter polysilicon and graphite, fixedly the sputtering power of polycrystalline silicon target, regulate the sputtering power of graphite target, thereby obtain different doping contents.
5. the method for preparing high conductivity polysilicon membrane according to claim 1, is characterized in that, the doping content of carbon is 10
16-10
20cm
-3, in every cubic centimetre of polysilicon membrane, carbon atom number is 10
16-10
20.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310542462.1A CN103560172B (en) | 2013-11-05 | 2013-11-05 | A kind of method preparing high conductivity polycrystalline silicon thin film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310542462.1A CN103560172B (en) | 2013-11-05 | 2013-11-05 | A kind of method preparing high conductivity polycrystalline silicon thin film |
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| Publication Number | Publication Date |
|---|---|
| CN103560172A true CN103560172A (en) | 2014-02-05 |
| CN103560172B CN103560172B (en) | 2015-10-21 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108251808A (en) * | 2018-06-05 | 2018-07-06 | 昆明物理研究所 | The preparation method of Copper-cladding Aluminum Bar multi-layer graphene |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2790900B2 (en) * | 1990-05-09 | 1998-08-27 | 信越化学工業株式会社 | Method for manufacturing a composite film composed of SiC and Si <3> N <4> and method for manufacturing a mask for X-ray lithography |
| CN101709456A (en) * | 2009-12-09 | 2010-05-19 | 中国科学院半导体研究所 | Method for preparing polysilicon film on graphite substrate by magnetic control sputtering |
| CN103374706A (en) * | 2012-04-13 | 2013-10-30 | 河南师范大学 | Method for preparing polycrystalline silicon film |
-
2013
- 2013-11-05 CN CN201310542462.1A patent/CN103560172B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2790900B2 (en) * | 1990-05-09 | 1998-08-27 | 信越化学工業株式会社 | Method for manufacturing a composite film composed of SiC and Si <3> N <4> and method for manufacturing a mask for X-ray lithography |
| CN101709456A (en) * | 2009-12-09 | 2010-05-19 | 中国科学院半导体研究所 | Method for preparing polysilicon film on graphite substrate by magnetic control sputtering |
| CN103374706A (en) * | 2012-04-13 | 2013-10-30 | 河南师范大学 | Method for preparing polycrystalline silicon film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108251808A (en) * | 2018-06-05 | 2018-07-06 | 昆明物理研究所 | The preparation method of Copper-cladding Aluminum Bar multi-layer graphene |
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| CN103560172B (en) | 2015-10-21 |
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