CN103553647A - Method for preparation of silicon nitride bonded silicon carbide refractory material by using silicon cutting waste mortar - Google Patents
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Abstract
The invention discloses a method for preparation of silicon nitride bonded silicon carbide refractory material by using silicon cutting waste mortar, and the method comprises the following steps: (1), preparing raw materials, wherein the raw materials including, by weight, 5%-20% of the silicon cutting waste mortar, 50%-80% of silicon carbide, 2%-20% of silicon nitride and 1%-10% of alumina; (2), adding the raw materials into absolute ethanol for wet ball milling; (3), drying the raw materials treated by the wet ball milling; (4), adding PVA (polyvinyl acetate) to the dried raw materials for granulation to prepare blank, wherein the mass of the added PVA being 3%-8% of the mass of the raw materials; and (5), sintering the blank in air atmosphere into the silicon nitride bonded silicon carbide refractory material. The method can realize full utilization of the silicon cutting waste mortar, has no secondary pollution, also does not need the protection of nitrogen, and only needs an electric furnace for heating in the air atmosphere to prepare the low-volume-density and high-flexure-strength silicon nitride bonded silicon carbide refractory material, and can reduce environment pressure, turn waste into treasure, reduce the production cost and realize industrialized production.
Description
Technical field
The present invention relates to a kind of silicon cutting waste mortar recoverying and utilizing method, relate in particular to a kind of method of utilizing silicon cutting waste mortar to prepare refractory materials.
Background technology
Along with a large amount of consumption utilizations of Nonrenewable energy resources, global energy growing tension, sun power becomes the most important new forms of energy of the mankind gradually as the permanent energy, and photovoltaic industry is developed rapidly in the whole world.While preparing solar cell, elemental silicon body need to be cut into satisfactory silicon chip, crystal silicon mainly adopts multi-wire saw technology to complete at present.Generally, an annual cutting waste slurry producing of cutting machine is up to tons up to a hundred, and along with China's photovoltaic industry fast development, the cutting waste material of generation is also increasing sharply, and has brought immense pressure not only to enterprise and environment, has also caused the significant wastage of resource.For this reason, the recycling of silicon cutting waste mortar is just being subject to increasing attention.
The main component of silicon cutting waste mortar is silicon carbide micro-powder, crystalline silicon and polyoxyethylene glycol, is mainly to take solid-liquid separation to obtain solid silicon carbide/silicon mixture and liquid polyethylene glycol at present.The recycling of polyoxyethylene glycol has realized industrialization.And solid mixt silicon carbide/silicon is because physics, chemical property are comparatively approaching, not easily separated, existing method is difficult to realize the separation of silica flour.Conventional method is that the pure silicon of removing in silicon cutting waste material by pickling alkali cleaning reclaims the prepared using that silicon carbide micro-powder cuts as line again at present, not only cost recovery is high but also wasted the higher HIGH-PURITY SILICON resource of economic worth for this, and whole removal process can produce a large amount of new collodial silica sodium sewage, causes secondary pollution.
Silicon nitride combined with silicon carbide refractory material is to take silicon nitride as the silicon carbide high grade refractory in conjunction with phase, many excellent properties of silicon nitride and carbofrax material have been acted on, a series of premium propertiess such as have that hot strength is high, thermal conductivity is large, linear expansivity is little, the solution erosional competency such as good thermal shock, alkaline erosion are good, good in oxidation resistance, anti-zinc-aluminium copper-lead is strong and high temperature abrasion resistance is good, obtain widespread use at aspects such as ferrous metallurgy production, aluminium cell and the productions of pottery kiln refractory slab.
As No. 200410009794.4 a kind of disclosed method with microwave technology Fast Sintering silicon nitride combined with silicon carbide refractory material of Chinese patent application, its utilize microwave to the rapid and uniform heating principle of material and microwave field the facilitation effect to nitrogenizing reaction, the silicon carbide mixing is become to blank with a small amount of organic binder bond by pressure forming with silica flour, through drying and pre-skimming treatment, under nitrogen atmosphere, to utilize frequency be the microwave that produces of the industrial microwave source of 900～3000 megahertzes is heated to carry out at 1100～1500 ℃ nitrogenizing reaction and sintering densification by blank.Yet the disclosed technique of this patent application is to mix silica flour in sic raw material, is reacted and is burnt till after moulding by high-temperature ammonolysis.Due to desired raw material as silicon carbide and silica flour price higher, and because silicon nitride and silicon carbide are all high temperature resistant compounds, and be the oxidizable compound of covalent linkage and high temperature, need under high temperature nitrogen atmosphere, burn till preparation, this technique is stricter to the requirement of nitrogenize equipment and atmosphere control, thereby, cause holding at high price of silicon nitride combined with silicon carbide refractory material, and be difficult to realize scale operation.
No. 201210287828.0 disclosed a kind of high-strength light silicon nitride combined with silicon carbide refractory material of Chinese patent application and preparation method thereof and for example, this material mainly be take silicon carbide and silica flour and is made as raw material, and the weight ratio of silicon carbide and silica flour is 65～85:15～30; Wherein, silicon carbide particle diameter D50=0.1 μ m～150 μ m, silica flour particle diameter D50=0.1 μ m～1 μ m; Will be whole raw materials carry out ball milling after mixing, Ball-milling Time is 8～12 hours, ball milling post-drying adds 8～12% the PVA granulation that raw material is heavy, crosses 40～80 mesh sieves, room temperature is placed more than 24 hours, dry-pressing formed, forming pressure is 40～80MPa, binder removal is nitridation sintered.Equally, also there is the problem of No. 200410009794.4th, Chinese patent application in the disclosed method of this patent application.
For another example No. 201310024132.3rd, Chinese patent application is disclosed a kind ofly reclaims with crystalline silicon processing waste mortar the entrained-flow reactor that silica flour is prepared beta-silicon nitride powder, its silica flour and nitrogen of take crystalline silicon processing waste mortar recovery is raw material, using nitrogen as silica flour and heat delivery carrier, and under air-flow condition, nitrogenizing reaction generates silicon nitride powder; Owing to reclaiming silica flour particle diameter≤8um, reaction generated time≤15s, synthetic crystal grain is not free grows up, and can generate nano-grade silicon nitride micro mist.Yet the disclosed method of this patent application is still confined to prepare silicon nitride under nitrogen atmosphere, meanwhile, this patent application does not disclose or advises utilizing crystalline silicon processing waste mortar to prepare silicon nitride combined with silicon carbide refractory material.
Therefore, provide a kind of method of utilizing silicon cutting waste mortar to prepare low-cost silicon nitride combined with silicon carbide refractory material to become urgent problem in the industry.
Summary of the invention
The object of this invention is to provide a kind of method of preparing silicon nitride combined with silicon carbide refractory material with silicon cutting waste mortar, the method can realize the recycling completely of silicon cutting waste mortar, effectively reduces the production cost of silicon nitride combined with silicon carbide refractory material simultaneously.
According to the solution of the present invention, a kind of method of preparing silicon nitride combined with silicon carbide refractory material with silicon cutting waste mortar is provided, comprise: (1), preparation raw material, raw material comprises that weight percent is respectively 5%～20% silicon cutting waste mortar, 50%～80% silicon carbide, 2%～20% silicon nitride and 1%～10% aluminum oxide; (2), raw material is added dehydrated alcohol carry out wet ball grinding; (3), dry the raw material after wet ball grinding; (4), in the raw material after drying, add PVA to carry out granulation, make biscuit, the quality of the PVA that wherein added is raw materials quality 3%～8%; And (5), under air atmosphere, sinter biscuit into silicon nitride combined with silicon carbide refractory material.
Wherein, silicon cutting waste mortar is the silicon cutting waste mortar after chemical settling, press filtration are processed.
Preferably, silicon cutting waste mortar is for removing the silicon carbide/silicon mixture after liquid polyethylene glycol and macrobead silicon carbide, and its particle diameter is less than or equal to 100 μ m, such as about 10 μ m, 30 μ m,
50 μ m, 80 μ m or its arbitrary combination.
Selectively, silicon cutting waste mortar iron-holder is higher, and impact is recycled, can first adopt sulfuric acid to soak molten method it is carried out to deironing, for example: the mass ratio 1:3～1:5 of silicon cutting waste mortar and sulfuric acid, sulfuric acid concentration 15～25%, 60～90 ℃ of soaking temperatures, soak time 60～120 minutes.
Wherein, silicon nitride particle diameter may be selected to be 5 μ m～100 μ m, such as about 10 μ m, 30 μ m, 50 μ m, 80 μ m or its arbitrary combination.
Wherein, aluminum oxide particle diameter may be selected to be 5 μ m～100 μ m, such as about 10 μ m, 30 μ m, 50 μ m, 80 μ m or its arbitrary combination.
Preferably, raw material comprises that weight percent is respectively 5%～15% silicon cutting waste mortar, 65%～75% silicon carbide, 10%～15% silicon nitride and 5%～10% aluminum oxide.
Selectively, the silicon carbide micro-powder particle diameter in raw material is set as 1 μ m～500 μ m, such as about 10 μ m, 100 μ m, 200 μ m, 300 μ m, 400 μ m or its arbitrary combination.
Preferably, silicon carbide micro-powder in raw material comprises coarse particles silicon carbide micro-powder and fine particle silicon carbide micro-powder, the particle diameter of coarse particles silicon carbide micro-powder is set as 100 μ m～450 μ m, the particle diameter of fine particle silicon carbide micro-powder is set as 1 μ m～19 μ m, coarse particles silicon carbide micro-powder is 1.5:1～5:1 with the quality of fine particle silicon carbide micro-powder than scope, such as about 2:1,3:1,4:1 etc.
Preferably, silicon carbide micro-powder in raw material comprises coarse particles silicon carbide micro-powder, middle particle silicon carbide micro-powder and fine particle silicon carbide micro-powder, the particle diameter of coarse particles silicon carbide micro-powder is set as 100 μ m～450 μ m, the particle diameter of middle particle silicon carbide micro-powder is set as 20 μ m～99 μ m, the particle diameter of fine particle silicon carbide micro-powder is set as 1 μ m～19 μ m, wherein, coarse particles silicon carbide micro-powder is 10:1～30:1 with the quality of middle particle silicon carbide micro-powder than scope, such as about 15:1, 20:1, 25:1 etc., coarse particles silicon carbide micro-powder is 10:1～15:1 with the quality of fine particle silicon carbide micro-powder than scope, such as about 12:1, 13:1, 14:1 etc.
More preferably, the particle diameter of coarse particles silicon carbide micro-powder is set as 400 μ m～450 μ m, and the particle diameter of middle particle silicon carbide micro-powder is set as 30 μ m～40 μ m, and the particle diameter of fine particle silicon carbide micro-powder is set as 1 μ m～10 μ m.
Selectively, in step (2), raw material is set as 1:2～2:1 with the quality of ball milling ball than scope, such as about 1:1.5,1:1,1.5:1 etc.; Raw material was set as 1:2～2:1 with the quality of dehydrated alcohol than scope, and such as approximately 1:1.5,1:1,1.5:1 etc., Ball-milling Time is set as 0.5～4 hour, such as about 1 hour, 2 hours, 3 hours etc.
Selectively, in step (3), bake out temperature is set as 60～80 ℃, such as about 65 ℃, 70 ℃, 75 ℃ etc.
Selectively, in step (4), be also included in room temperature after granulation and place at least 24 hours, such as about 30 hours, 36 hours, 48 hours etc.Dry-pressing formed again, forming pressure is 10～40MPa, such as about 15MPa, 20MPa, 30MPa etc.Thereby make biscuit.
Preferably, in step (5), firing condition is: first with the speed of 5～10 ℃/min (such as 8 ℃/min), be warming up to 1000-1150 ℃ and be incubated 1～3 hour (such as 1.5 hours or 2 hours), next with the speed of 1～5 ℃/min (such as 3 ℃/min), be warming up to 1300～1350 ℃ and be incubated 1～3 hour (such as 1.5 hours or 2 hours), with the speed of 1～5 ℃/min (such as 2 ℃/min), be warming up to 1400～1450 ℃ and be incubated 1～3 hour (such as 1.5 hours or 2 hours) again, then naturally cool to room temperature.
The invention has the beneficial effects as follows: (1) present method has realized the utilization completely of silicon cutting waste mortar, reduces environmental pollution, turns waste into wealth; (2) and present method do not need nitrogen protection, can on the electric furnace of air atmosphere, prepare, firing time is short, can effectively reduce energy consumption and cost, improves the competitiveness of product in market; (3) the present invention adopts step heat preservation method, can effectively avoid flowing silicon; (4) silicon carbide micro-powder of the present invention comprises coarse particles silicon carbide micro-powder, middle particle silicon carbide micro-powder and fine particle silicon carbide micro-powder, and thick middle fine particle proportioning is suitable, can improve the physicals of product; (5) utilize method of the present invention, resulting silicon nitride combined with silicon carbide refractory material, its unit weight is 1.6～1.9g/cm
3, folding strength is greater than 30MPa, and void content is less than 15%, can meet general service requirements, has cost advantage.
Embodiment
Below with reference to non-limiting embodiment, describe the present invention in detail.
The invention provides a kind of method of preparing low-cost silicon nitride combined with silicon carbide refractory material with silicon cutting waste mortar, comprise following steps:
(1) the following component of raw material choose and weight percent:
Wherein silicon carbide micro-powder particle diameter is 1 μ m～500 μ m, and preferably, in silicon carbide micro-powder, particle diameter is that the silicon carbide quality that silicon carbide and the particle diameter of 1 μ m～50 μ m is 50 μ m～450 μ m is 1:7～7:1 than scope.
(2) above-mentioned whole raw materials are added to appropriate dehydrated alcohol and carry out wet ball grinding, wherein, raw material is 1:2～2:1 with the quality of ball milling ball than scope; Raw material is 1:2～2:1 with the quality of dehydrated alcohol than scope, and Ball-milling Time is 0.5～4 hour, ball milling post-drying, and selected bake out temperature is preferably 60～80 ℃.
(3) compound after above-mentioned oven dry being added to mass percent is 5% PVA (polyvinyl alcohol) granulation, and room temperature is placed more than 24 hours, and dry-pressing formed, forming pressure is 10～40MPa, makes biscuit.
(4) biscuit is burnt till under air atmosphere, firing condition is 1400～1450 ℃, the speed of burning till Elevated Temperature Conditions and be 5～10 ℃/min is warming up to 1000 ℃, 1000-1150 ℃ of insulation 1～3 hour, with the speed of 1～5 ℃/min, be warming up to 1300～1350 ℃ of insulations 1～3 hour again, with the speed of 1～5 ℃/min, be warming up to 1400～1450 ℃ of insulations 1～3 hour again, then naturally cool to room temperature, can obtain the silicon nitride combined with silicon carbide refractory material of good mechanical properties.
Because the nitrogenizing reaction of Si is strong exothermal reaction, exothermic heat of reaction has larger impact to the nitrogenization speed of Si, and therefore rationally controlling reaction process is the key that determines nitriding rate.Si and N
2since 1100 just reactions, but speed of reaction is lower, and in the time of 1200 ℃～1420 ℃, reaction is acutely carried out, and emits a large amount of reaction heat simultaneously.Therefore the temperature of base substrate inside may exceed approximately 40 ℃ than furnace temperature, if can not effectively control reaction process, reaction heat can make the temperature of base substrate surpass the fusing point (1420 ℃) of metal Si, and unreacted Si will melt; Compared with the molten group of little silicon can because of cannot nitrogenize the most free silica remain in base substrate, worsen the mechanical behavior under high temperature of material; And the molten group of larger silicon even can make base substrate spalling, molten collapsing from billet surface benefit, cause serious " stream silicon " phenomenon, thereby goods are scrapped.Controlling reaction process mainly realizes by controlling temperature rise rate.
Hereinafter with reference to table 1, specifically describe the process that the method according to this invention is prepared example product 1-5.
Composition of raw materials and performance comparison table that table 1 product 1-5 adopts
Wherein, the particle diameter of coarse particles silicon carbide micro-powder is set as 100 μ m～450 μ m, can select the arbitrary combination of about 350 μ m, 400 μ m, 420 μ m, 450 μ m or these particle diameters; The particle diameter of middle particle silicon carbide micro-powder is set as 20 μ m～99 μ m, can select the arbitrary combination of about 30 μ m, 35 μ m, 45 μ m, 60 μ m or these particle diameters; The particle diameter of fine particle silicon carbide micro-powder is set as 1 μ m～19 μ m, can select the arbitrary combination of about 3 μ m, 5 μ m, 10 μ m, 15 μ m or these particle diameters.
The preparation method of product 1 is:
After being mixed, whole raw materials carry out ball milling, take dehydrated alcohol as ball-milling medium, ball milling in planetary mills (mass ratio of raw material, ball and dehydrated alcohol is 1:2:1.3), Ball-milling Time is 1 hour, and the slurry after ball milling is dried under 60 ℃ of conditions, with the PVA granulation of concentration 5%, room temperature is placed 24 hours, get powder after appropriate granulation in mould, dry-pressing formed, forming pressure is 10～15MPa.Under air atmosphere, high temperature burns till, firing condition: first the speed with 5 ℃/min is warming up to 1100 ℃, then is warming up to 1300 ℃ with the speed of 2 ℃/min, at 1300 ℃ of insulation 1h, speed with 1.5 ℃/min is warming up to 1400 ℃ again, under 1400 ℃ of conditions of temperature, is incubated 3h.Finally the speed with 1 ℃/min is warming up to 1450 ℃, under 1450 ℃ of conditions of temperature, is incubated 3h, and obtaining bending strength is 32MPa, unit weight 1.64g/cm3, the silicon nitride combined silicon carbide material that thermal shock resistance is good.
The preparation method of product 2 is:
After being mixed, whole raw materials carry out ball milling, take dehydrated alcohol as ball-milling medium, ball milling in planetary mills (mass ratio of raw material, ball and dehydrated alcohol is 1:1.5:1.5), Ball-milling Time is 0.5 hour, and the slurry after ball milling is dried under 70 ℃ of conditions, with the PVA granulation of concentration 8%, room temperature is placed 36 hours, get powder after appropriate granulation in mould, dry-pressing formed, forming pressure is 15～20MPa.Under air atmosphere, high temperature burns till, firing condition: first the speed with 3 ℃/min is warming up to 1100 ℃, at 1100 ℃ of insulation 2h, then is warming up to 1300 ℃ with the speed of 2 ℃/min,
At 1300 ℃ of insulation 0.5h, then be warming up to 1400 ℃ with the speed of 1.5 ℃/min, under 1400 ℃ of conditions of temperature, be incubated 1h.Finally the speed with 1 ℃/min is warming up to 1450 ℃, under 1450 ℃ of conditions of temperature, is incubated 2.5h, obtains the silicon nitride combined silicon carbide material of good mechanical properties.
The preparation method of product 3,4,5 is:
After being mixed, whole raw materials carry out ball milling, take dehydrated alcohol as ball-milling medium, ball milling in planetary mills (mass ratio of raw material, ball and dehydrated alcohol is 1:1:1), Ball-milling Time is 1.5 hours, and the slurry after ball milling is dried under 80 ℃ of conditions, with the PVA granulation of concentration 4%, room temperature is placed 48 hours, get powder after appropriate granulation in mould, dry-pressing formed, forming pressure is 20～25MPa.Under air atmosphere, high temperature burns till, firing condition: first the speed with 4 ℃/min is warming up to 1100 ℃, at 1100 ℃ of insulation 2h, speed with 2 ℃/min is warming up to 1300 ℃ again, at 1300 ℃ of insulation 1h, then be warming up to 1400 ℃ with the speed of 1.5 ℃/min, under 1400 ℃ of conditions of temperature, be incubated 1h.Finally the speed with 1 ℃/min is warming up to 1450 ℃, under 1450 ℃ of conditions of temperature, is incubated 3h, obtains the silicon nitride combined silicon carbide material of good mechanical properties.
Although described the preferred embodiment of the present invention in detail at this, but should be understood that the present invention is not limited to the concrete structure of describing in detail and illustrating here, in the situation that not departing from the spirit and scope of the invention, can be realized by those skilled in the art other modification and variant.For example, the parameter such as proportioning, size, temperature and pressure can suitably be chosen according to concrete application conditions in scope disclosed in this invention.
Claims (10)
1. with silicon cutting waste mortar, prepare a method for silicon nitride combined with silicon carbide refractory material, comprising:
(1), preparation raw material, described raw material comprises that weight percent is respectively 5%～20% silicon cutting waste mortar, 50%～80% silicon carbide, 2%～20% silicon nitride and 1%～10% aluminum oxide;
(2), add dehydrated alcohol to carry out wet ball grinding described raw material;
(3), dry the described raw material after wet ball grinding;
(4), in the described raw material after drying, add PVA to carry out granulation, make biscuit, the quality of the PVA that wherein added is described raw materials quality 3%～8%; And
(5), under air atmosphere, sinter described biscuit into silicon nitride combined with silicon carbide refractory material.
2. the method for preparing silicon nitride combined with silicon carbide refractory material with silicon cutting waste mortar as claimed in claim 1, it is characterized in that, described raw material comprises that weight percent is respectively 5%～15% silicon cutting waste mortar, 65%～75% silicon carbide, 10%～15% silicon nitride and 5%～10% aluminum oxide.
3. the method for preparing silicon nitride combined with silicon carbide refractory material with silicon cutting waste mortar as claimed in claim 1, is characterized in that, the silicon carbide micro-powder particle diameter in described raw material is set as 1 μ m～500 μ m.
4. the method for preparing silicon nitride combined with silicon carbide refractory material with silicon cutting waste mortar as claimed in claim 3, it is characterized in that, silicon carbide micro-powder in described raw material comprises coarse particles silicon carbide micro-powder and fine particle silicon carbide micro-powder, the particle diameter of described coarse particles silicon carbide micro-powder is set as 100 μ m～450 μ m, the particle diameter of described fine particle silicon carbide micro-powder is set as 1 μ m～19 μ m, and described coarse particles silicon carbide micro-powder is 1.5:1～5:1 with the quality of described fine particle silicon carbide micro-powder than scope.
5. the method for preparing silicon nitride combined with silicon carbide refractory material with silicon cutting waste mortar as claimed in claim 3, it is characterized in that, silicon carbide micro-powder in described raw material comprises coarse particles silicon carbide micro-powder, middle particle silicon carbide micro-powder and fine particle silicon carbide micro-powder, the particle diameter of described coarse particles silicon carbide micro-powder is set as 100 μ m～450 μ m, the particle diameter of described middle particle silicon carbide micro-powder is set as 20 μ m～99 μ m, the particle diameter of described fine particle silicon carbide micro-powder is set as 1 μ m～19 μ m, wherein, described coarse particles silicon carbide micro-powder is 10:1～30:1 with the quality of described middle particle silicon carbide micro-powder than scope, described coarse particles silicon carbide micro-powder is 10:1～15:1 with the quality of described fine particle silicon carbide micro-powder than scope.
6. the method for preparing silicon nitride combined with silicon carbide refractory material with silicon cutting waste mortar as claimed in claim 5, it is characterized in that, the particle diameter of described coarse particles silicon carbide micro-powder is set as 400 μ m～450 μ m, the particle diameter of described middle particle silicon carbide micro-powder is set as 30 μ m～40 μ m, and the particle diameter of described fine particle silicon carbide micro-powder is set as 1 μ m～10 μ m.
7. as described in any one in claim 1～6, with silicon cutting waste mortar, prepare the method for silicon nitride combined with silicon carbide refractory material, it is characterized in that, in described step (2), described raw material is set as 1:2～2:1 with the quality of ball milling ball than scope; Described raw material is set as 1:2～2:1 with the quality of dehydrated alcohol than scope, and Ball-milling Time is set as 0.5～4 hour.
8. as described in any one in claim 1～6, with silicon cutting waste mortar, prepare the method for silicon nitride combined with silicon carbide refractory material, it is characterized in that, in described step (3), bake out temperature is set as 60～80 ℃.
9. as described in any one in claim 1～6, with silicon cutting waste mortar, prepare the method for silicon nitride combined with silicon carbide refractory material, it is characterized in that, also be included in granulation in described step (4) after, room temperature is placed at least 24 hours, dry-pressing formed again, forming pressure is 10～40MPa, thereby makes described biscuit.
10. as described in any one in claim 1～6, with silicon cutting waste mortar, prepare the method for silicon nitride combined with silicon carbide refractory material, it is characterized in that, in described step (5), firing condition is: first with the speed of 5～10 ℃/min, be warming up to 1000-1150 ℃ and be incubated 1～3 hour, next with the speed of 1～5 ℃/min, be warming up to 1300～1350 ℃ and be incubated 1～3 hour, with the speed of 1～5 ℃/min, be warming up to 1400～1450 ℃ and be incubated 1～3 hour again, then naturally cool to room temperature.
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| CN104045357B (en) * | 2014-03-06 | 2016-05-25 | 新疆众和股份有限公司 | One is composite refractory and preparation method thereof cheaply |
| CN104045358B (en) * | 2014-03-06 | 2016-11-23 | 新疆众和股份有限公司 | A kind of composite refractory and preparation method thereof |
| CN107445623A (en) * | 2017-08-23 | 2017-12-08 | 沈阳长信碳化硅微粉有限公司 | A kind of production method of the silicon carbide micro-powder of fine ceramics product |
| CN111892403A (en) * | 2020-08-03 | 2020-11-06 | 福赛特(唐山)新材料有限公司 | High-temperature anti-bending silicon nitride combined silicon carbide slab and preparation method thereof |
| CN113416042A (en) * | 2021-07-15 | 2021-09-21 | 龙南县彩艺装饰材料厂 | Dry-mixed thin layer masonry mortar |
| CN114956829A (en) * | 2022-06-18 | 2022-08-30 | 江苏诺明高温材料股份有限公司 | Silicon nitride and silicon carbide combined brick for dry quenching chute and preparation method thereof |
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Address after: 213000 Jiangsu Province, Changzhou New District No. 60 Jia Qiao Ying Long Cun Wei Ji (the original Wei village brick factory) Patentee after: Changzhou Guicheng environmental building materials Limited by Share Ltd Address before: 213000 Jiangsu Province, Changzhou New District No. 60 Jia Qiao Ying Long Cun Wei Ji (the original Wei village brick factory) Patentee before: Changzhou Guicheng Building Materials Co., Ltd. |
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