CN103545415A - 发光二极管的制造方法 - Google Patents
发光二极管的制造方法 Download PDFInfo
- Publication number
- CN103545415A CN103545415A CN201210238674.6A CN201210238674A CN103545415A CN 103545415 A CN103545415 A CN 103545415A CN 201210238674 A CN201210238674 A CN 201210238674A CN 103545415 A CN103545415 A CN 103545415A
- Authority
- CN
- China
- Prior art keywords
- light
- emitting diode
- die
- substrate
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 238000011068 loading method Methods 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 33
- 229920005989 resin Polymers 0.000 claims description 16
- 239000011347 resin Substances 0.000 claims description 16
- 238000003825 pressing Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000005452 bending Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004568 cement Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 208000002925 dental caries Diseases 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/13—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
Description
承载板 | 10 |
第一导电层 | 11 |
树脂层 | 13、15 |
第二导电层 | 17 |
连接板 | 20 |
发光二极管芯片 | 30 |
焊料 | 31、32 |
孔穴 | 33 |
基板 | 40 |
上模具 | 51 |
下模具 | 53 |
封装层 | 60 |
主体部 | 511 |
模仁 | 513 |
缓冲层 | 515 |
凹穴 | 517 |
模穴 | 531 |
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210238674.6A CN103545415B (zh) | 2012-07-11 | 2012-07-11 | 发光二极管的制造方法 |
TW101125948A TW201403888A (zh) | 2012-07-11 | 2012-07-19 | 發光二極體的製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210238674.6A CN103545415B (zh) | 2012-07-11 | 2012-07-11 | 发光二极管的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103545415A true CN103545415A (zh) | 2014-01-29 |
CN103545415B CN103545415B (zh) | 2016-10-05 |
Family
ID=49968672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210238674.6A Active CN103545415B (zh) | 2012-07-11 | 2012-07-11 | 发光二极管的制造方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN103545415B (zh) |
TW (1) | TW201403888A (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102519814B1 (ko) | 2016-12-15 | 2023-04-10 | 루미리즈 홀딩 비.브이. | 높은 근거리 콘트라스트 비를 갖는 led 모듈 |
WO2018108734A1 (en) * | 2016-12-15 | 2018-06-21 | Lumileds Holding B.V. | Led module with high near field contrast ratio |
CN106887505B (zh) * | 2017-04-24 | 2019-07-16 | 芜湖聚飞光电科技有限公司 | 一种单面发光芯片级led的制作方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004087796A (ja) * | 2002-08-27 | 2004-03-18 | Matsushita Electric Works Ltd | Ledチップ取付部材の製造方法及びそのledチップ取付部材を用いたled実装基板 |
US20040248332A1 (en) * | 2003-06-03 | 2004-12-09 | Joon Ho Yoon | Method of manufacturing light-emitting diode device |
CN101315963A (zh) * | 2007-05-29 | 2008-12-03 | 岩谷产业株式会社 | 半导体发光装置 |
CN102376853A (zh) * | 2010-08-09 | 2012-03-14 | Lg伊诺特有限公司 | 发光器件和具有该发光器件的照明系统 |
-
2012
- 2012-07-11 CN CN201210238674.6A patent/CN103545415B/zh active Active
- 2012-07-19 TW TW101125948A patent/TW201403888A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004087796A (ja) * | 2002-08-27 | 2004-03-18 | Matsushita Electric Works Ltd | Ledチップ取付部材の製造方法及びそのledチップ取付部材を用いたled実装基板 |
US20040248332A1 (en) * | 2003-06-03 | 2004-12-09 | Joon Ho Yoon | Method of manufacturing light-emitting diode device |
CN101315963A (zh) * | 2007-05-29 | 2008-12-03 | 岩谷产业株式会社 | 半导体发光装置 |
CN102376853A (zh) * | 2010-08-09 | 2012-03-14 | Lg伊诺特有限公司 | 发光器件和具有该发光器件的照明系统 |
Also Published As
Publication number | Publication date |
---|---|
TW201403888A (zh) | 2014-01-16 |
CN103545415B (zh) | 2016-10-05 |
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160706 Address after: 518000 Guangdong Province, Shenzhen New District of Longhua City, Dalang street, Hua Sheng Lu Yong Jingxuan commercial building 1608 Applicant after: Jinyang Shenzhen sea Network Intelligent Technology Co.,Ltd. Address before: 518109 Guangdong province Shenzhen city Longhua District Dragon Road No. 83 wing group building 11 floor Applicant before: SCIENBIZIP CONSULTING (SHEN ZHEN) Co.,Ltd. Effective date of registration: 20160706 Address after: 518109 Guangdong province Shenzhen city Longhua District Dragon Road No. 83 wing group building 11 floor Applicant after: SCIENBIZIP CONSULTING (SHEN ZHEN) Co.,Ltd. Address before: 518109 Guangdong city of Shenzhen province Baoan District Longhua Street tabulaeformis Industrial Zone tenth east two Ring Road No. two Applicant before: ZHANJING Technology (Shenzhen) Co.,Ltd. Applicant before: Advanced Optoelectronic Technology Inc. |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160822 Address after: 266000 Licang, Qingdao, No. nine East water road, No. 320, No. Applicant after: QINGDAO YULANXIANG BUSINESS SERVICE Co.,Ltd. Address before: 518000 Guangdong Province, Shenzhen New District of Longhua City, Dalang street, Hua Sheng Lu Yong Jingxuan commercial building 1608 Applicant before: Jinyang Shenzhen sea Network Intelligent Technology Co.,Ltd. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Hong Haishui Inventor before: Luo Xingfen |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170314 Address after: 523808 Dongguan Industrial Park, high tech Industrial Development Zone, Songshan Lake, Guangdong, No. 3, No. 6, No. 407 Patentee after: DONGGUAN INBRIGHT ELECTRONIC TECHNOLOGY CO.,LTD. Address before: 266000 Licang, Qingdao, No. nine East water road, No. 320, No. Patentee before: QINGDAO YULANXIANG BUSINESS SERVICE Co.,Ltd. |