CN103545013A - Aluminium paste special for local aluminium back surface field crystalline silicon solar cells and preparation method of aluminium paste - Google Patents
Aluminium paste special for local aluminium back surface field crystalline silicon solar cells and preparation method of aluminium paste Download PDFInfo
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- CN103545013A CN103545013A CN201310322676.8A CN201310322676A CN103545013A CN 103545013 A CN103545013 A CN 103545013A CN 201310322676 A CN201310322676 A CN 201310322676A CN 103545013 A CN103545013 A CN 103545013A
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 97
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 91
- 239000004411 aluminium Substances 0.000 title claims abstract description 65
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 5
- 239000000843 powder Substances 0.000 claims abstract description 17
- 239000000654 additive Substances 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- 239000002994 raw material Substances 0.000 claims description 20
- 230000000996 additive effect Effects 0.000 claims description 15
- -1 alcohol ester Chemical class 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 239000002270 dispersing agent Substances 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 7
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 7
- 229920001249 ethyl cellulose Polymers 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 229940023462 paste product Drugs 0.000 claims description 7
- 239000005011 phenolic resin Substances 0.000 claims description 7
- 229920001568 phenolic resin Polymers 0.000 claims description 7
- 229910052573 porcelain Inorganic materials 0.000 claims description 7
- 238000003723 Smelting Methods 0.000 claims description 4
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 2
- 239000001856 Ethyl cellulose Substances 0.000 claims description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 claims description 2
- 239000012752 auxiliary agent Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 230000006378 damage Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 29
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 6
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical class CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 5
- 150000001298 alcohols Chemical class 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001398 aluminium Chemical class 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses aluminium paste special for local aluminium back surface field crystalline silicon solar cells. The paste is prepared from, by mass, 70-80 parts of aluminium powder, 0.05-3 parts of inorganic bond, 17-27 parts of organic bond and 1-5 parts of additives in proportion. The invention further discloses a preparation method of the aluminium paste special for the local aluminium back surface field crystalline silicon solar cells. Compared with traditional aluminium paste, the aluminium paste specially applied to the local aluminium back surface field crystalline silicon solar cells has the advantages of good fluidity, small damage to passivating films, good contact with a window, density and uniformity in aluminium coatings, and the like. Average conversion efficiency of mass production of the aluminium paste applied to the local aluminium back surface field crystalline silicon solar cells is more than or equal to 20.0%, and tested aluminium back surface field adhesion tension is more than or equal to 10N via EVA tearing test after the cells are laminated and encapsulated.
Description
Technical field
The present invention relates to the special-purpose aluminium paste of a kind of local aluminum back surface field crystal-silicon solar cell, meanwhile, the invention still further relates to the preparation method of described slurry.
Background technology
Solar cell is solar radiation to be directly changed into a kind of device of electric energy, and an important parameter weighing its performance is exactly conversion efficiency, in unit are, exports the ratio of energy and input energy.Improving solar cell conversion efficiency mainly carries out from two aspects: the one, and optics aspect, improves constantly the absorption of solar cell to incident light by various means, to produce more photo-generated carrier; Another one is electricity aspect, reduces photo-generated carrier in cell body and surface compound as far as possible, reduces various resistance losses simultaneously, makes more electric energy can output to external loading.
Local aluminum aluminum back surface field (Passivated Emitter and Rear Cell is called for short PERC)) crystal-silicon solar cell is a kind of of high-efficiency battery.In early days, the people such as the Blakers of University of New South Wales this type of battery that efficiency is 22.8% of having reported for work, its back of the body surface adopts the SiO of thermal oxidation
2passivation, back of the body surface electrode adopts some contact form.The back side of local aluminum aluminum back surface field crystal-silicon solar cell is coated with passivating film, on passivating film, generally by means such as laser ablations, being bored a hole or slotted, (groove width is generally 30 ~ 50 μ m, spacing is 1mm left and right), aluminium paste is printed on passivating film, aluminium paste only contacts with silicon base in perforation or fluting place, and back of the body electric field is that point or line contact are drawn.So both kept back surface field effect, reduced back metal contacts area simultaneously, the high recombination rate region of metal and interface is greatly reduced, due to the area minimizing (general dense district area only accounts for the long-pending 1-2% in the full back side) of the dense doped region in the back side, also greatly reduce the surface recombination at the back side.Although local aluminum aluminum back surface field has increased series resistance, fill factor, curve factor FF also declines to some extent, and open circuit voltage Voc and the short-circuit current density Jsc of cell piece all increase, and resultant effect still makes conversion efficiency improve 0.8-1.2%.
Based on above-mentioned advantage, local aluminum aluminum back surface field is more and more subject to the attention of domestic and international cell piece producer.Along with the development of every process matched therewith equipment and perfect, local aluminum back surface field crystal-silicon solar cell Commercialization Trends is very clear.The solar cell of local aluminum aluminum back surface field is also had higher requirement to conducting aluminum paste, and the corrosivity of conventional aluminium paste is too strong, can cause serious destruction to the passivating film of battery surface; And conventional aluminium paste can not be filled perforation or fluting on passivating film well, cannot form good ohmic contact with silicon base, contact poor with passivating film window.Therefore the aluminium paste of, developing a kind of applicable local aluminum aluminum back surface field solar cell is very necessary.
Summary of the invention
The object of the present invention is to provide a kind of special-purpose aluminium paste that is applicable to local aluminum back surface field crystal-silicon solar cell, this new structure battery has higher photoelectric conversion efficiency.
Another object of the present invention is to provide the preparation method of the special-purpose aluminium paste of a kind of local aluminum back surface field crystal-silicon solar cell.
The special-purpose aluminium paste of local aluminum back surface field crystal-silicon solar cell provided by the invention, is made by the raw material of following proportion by weight: the aluminium powder of 70-80 part, the inorganic bond of 0.05-3 part, the organic bond of 20-30 part, the additive of 1-5 part.
Preferably, described aluminium powder is class ball aluminum powder, and purity is greater than 99.90%, particle mean size 2.0-6.0 μ m.
More preferably, described inorganic bond is made by the raw material of following proportion by weight: SiO
25-15 part, B
2o
35-20 part, Al
2o
31-6 part, Bi
2o
3or PbO35-55 part, ZnO 5-20 part, TiO
21-3 part and ZrO
21-3 part.
Described organic bond is made by the raw material of following proportion by weight: ethyl cellulose 4-10 part, and phenolic resins 0.5-3 part, diethylene glycol monobutyl ether 5-15 part, terpinol 35-45 part, alcohol ester 12 3-10 parts, butyl carbitol acetate 25-40 part forms.
Described additive is various commercial dispersants and/or levelling agent etc.
The preparation method of the special-purpose aluminium paste of a kind of local aluminum back surface field crystal-silicon solar cell provided by the invention, comprises the following steps:
(1) preparation of organic bond: the raw material that forms organic bond is dissolved in reactor, obtain homogeneous, transparent organic bond;
(2) preparation of inorganic bond: after the raw material that forms inorganic bond is mixed, pack in porcelain crucible, after being dried in digital display air dry oven, put into high temperature furnace melting, shrend post-drying, is then milled to below 8 μ m, dries and obtains inorganic bond;
(3) preparation of aluminium paste: described aluminium powder, inorganic bond, organic bond and additive are mixed, then use three-roll grinder to carry out grinding distribution to fineness < 20 μ m, viscosity 15000-30000mPaS, obtains the special-purpose aluminium paste product of local aluminum back surface field crystal-silicon solar cell of sheet resistance <60m Ω/.
In above-mentioned preparation method, the solution temperature in described step (1) in reactor is 80-120 ℃; Baking temperature in described step (2) in digital display air dry oven is 135 ± 10 ℃, and be 1-3h drying time, and the smelting temperature in high temperature furnace is 900-1100 ℃, and smelting time is 50-90 minute.
Compare with traditional aluminium paste, product of the present invention has the following advantages: aluminium paste good fluidity, less and contact with passivating film window to Damage of Passive Film, and by adding appropriate addn to improve the situation that contacts of aluminium paste and window.Product of the present invention is applied to volume production conversion efficiency >=20.0% on local aluminum back surface field single crystal silicon solar cell, by after cell piece laminating packaging, through EVA tearing test, records aluminium back surface field and adheres to pulling force >=10N.
Embodiment
Following examples are only for setting forth the present invention, and protection scope of the present invention is not only confined to following examples.The those of ordinary skill of described technical field, according to above content disclosed by the invention and scope that each parameter is got, all can be realized object of the present invention.
embodiment 1
1) prepare inorganic bond: by mass parts, get SiO
215 parts, B
2o
320 parts, Al
2o
36 parts, Bi
2o
335 parts, 20 parts of ZnO, TiO
23 parts and ZrO
21 part, after above-mentioned raw materials is mixed, pack in porcelain crucible, in digital display air dry oven, after 135 ± 10 ℃ of dry 2h, put into high temperature furnace, in 900 ℃ of meltings 70 minutes, shrend post-drying, was then milled to below 8 μ m, dried and obtained inorganic bond;
2) prepare organic bond: by mass parts, get 7.5 parts of ethyl celluloses, 2.5 parts, phenolic resins, 12 parts of diethylene glycol monobutyl ethers, 39 parts of terpinols, 12 parts of alcohol esters, 36 parts of butyl carbitol acetates dissolve above-mentioned raw materials in reactor at 100 ℃, obtain homogeneous, transparent organic bond;
3) aluminium powder: class ball aluminum powder, purity is greater than 99.90%, particle mean size 2.0-6.0 μ m;
4) additive: various commercial dispersants, levelling agent etc.
By the aluminium powder of 77 parts of mass parts, the inorganic bond of 0.9 part, the organic bond of 20 parts, the additive of 2.1 parts mixes, then use three-roll grinder to carry out grinding distribution to fineness < 20 μ m, viscosity 18000mPaS, obtains the special-purpose aluminium paste product of local aluminum back surface field crystal-silicon solar cell of sheet resistance <60m Ω/.
embodiment 2
1) prepare inorganic bond: by mass parts, get SiO
215 parts, B
2o
35 parts, Al
2o
31 part, 65 parts of PbO, 10 parts of ZnO, TiO
22 parts and ZrO
22 parts, after above-mentioned raw materials is mixed, pack in porcelain crucible, in digital display air dry oven, after 135 ± 10 ℃ of dry 2h, put into high temperature furnace, in 1000 ℃ of meltings 50 minutes, shrend post-drying, was then milled to below 8 μ m, dried and obtained inorganic bond;
2) prepare organic bond: by mass parts, get 10 parts of ethyl celluloses, 1 part, phenolic resins, 14 parts of diethylene glycol monobutyl ethers, 40 parts of terpinols, 12 parts of alcohol esters, 25 parts of butyl carbitol acetates dissolve above-mentioned raw materials in reactor at 100 ℃, obtain homogeneous, transparent organic bond;
3) aluminium powder: class ball aluminum powder, purity is greater than 99.90%, particle mean size 2.0-6.0 μ m;
4) additive: various commercial dispersants, levelling agent etc.
By the aluminium powder of 77 parts of mass parts, the inorganic bond of 1 part, the organic bond of 17 parts, the additive of 5 parts mixes, then use three-roll grinder to carry out grinding distribution to fineness < 20 μ m, viscosity 21000mPaS, obtains the special-purpose aluminium paste product of local aluminum back surface field crystal-silicon solar cell of sheet resistance <60m Ω/.
embodiment 3
1) prepare inorganic bond: by mass parts, get SiO
25 parts, B
2o
315 parts, Al
2o
36 parts, Bi
2o
350 parts, 20 parts of ZnO, TiO
21 part and ZrO
23 parts, after above-mentioned raw materials is mixed, pack in porcelain crucible, in digital display air dry oven, after 135 ± 10 ℃ of dry 1.5h, put into high temperature furnace, in 1100 ℃ of meltings 80 minutes, shrend post-drying, is then milled to below 8 μ m, dries and obtains inorganic bond;
2) prepare organic bond: by mass parts, get 7 parts of ethyl celluloses, 1.5 parts, phenolic resins, 13 parts of diethylene glycol monobutyl ethers, 45 parts of terpinols, 12 parts of alcohol esters, 25 parts of butyl carbitol acetates dissolve above-mentioned raw materials in reactor at 100 ℃, obtain homogeneous, transparent organic bond;
3) aluminium powder: class ball aluminum powder, purity is greater than 99.90%, particle mean size 2.0-6.0 μ m;
4) additive: various commercial dispersants, levelling agent etc.
By the aluminium powder of 78 parts of mass parts, the inorganic bond of 0.1 part, the organic bond of 18 parts, the additive of 3.9 parts mixes, then use three-roll grinder to carry out grinding distribution to fineness < 20 μ m, viscosity 24000mPaS, obtains the special-purpose aluminium paste product of local aluminum back surface field crystal-silicon solar cell of sheet resistance <60m Ω/.
embodiment 4
1) prepare inorganic bond: by mass parts, get SiO
210 parts, B
2o
320 parts, Al
2o
34 parts, PbO45 part, 17 parts of ZnO, TiO
23 parts and ZrO
21 part, after above-mentioned raw materials is mixed, pack in porcelain crucible, in digital display air dry oven, after 135 ± 10 ℃ of dry 3h, put into high temperature furnace, in 900 ℃ of meltings 70 minutes, shrend post-drying, was then milled to below 8 μ m, dried and obtained inorganic bond;
2) prepare organic bond: by mass parts, get 5 parts of ethyl celluloses, 0.5 part, phenolic resins, 10 parts of diethylene glycol monobutyl ethers, 35 parts of terpinols, 12 parts of alcohol esters, 40 parts of butyl carbitol acetates dissolve above-mentioned raw materials in reactor at 100 ℃, obtain homogeneous, transparent organic bond;
3) aluminium powder: class ball aluminum powder, purity is greater than 99.90%, particle mean size 2.0-6.0 μ m;
4) additive: various commercial dispersants, levelling agent etc.
By the aluminium powder of 73 parts of mass parts, the inorganic bond of 3 parts, the organic bond of 23 parts, the additive of 1 part mixes, then use three-roll grinder to carry out grinding distribution to fineness < 20 μ m, viscosity 28000mPaS, obtains the special-purpose aluminium paste product of local aluminum back surface field crystal-silicon solar cell of sheet resistance <60m Ω/.
embodiment 5
1) prepare inorganic bond
By mass parts, get SiO
213 parts, B
2o
318 parts, Al
2o
33 parts, Bi
2o
356 parts, 5 parts of ZnO, TiO
22 parts and ZrO
23 parts, after above-mentioned raw materials is mixed, pack in porcelain crucible, in digital display air dry oven, after 135 ± 10 ℃ of dry 2h, put into high temperature furnace, in 1000 ℃ of meltings 50 minutes, shrend post-drying, was then milled to below 8 μ m, dried and obtained inorganic bond;
2) prepare organic bond: by mass parts, get 4 parts of ethyl celluloses, 3 parts, phenolic resins, 8 parts of diethylene glycol monobutyl ethers, 40 parts of terpinols, 12 parts of alcohol esters, 35 parts of butyl carbitol acetates, above-mentioned raw materials is dissolved at 100 ℃ in reactor, obtain homogeneous, transparent organic bond;
3) aluminium powder: class ball aluminum powder, purity is greater than 99.90%, particle mean size 2.0-6.0 μ m;
4) additive: various commercial dispersants, levelling agent etc.
By the aluminium powder of 74 parts of mass parts, the inorganic bond of 1.8 parts, the organic bond of 21 parts, the additive of 3.2 parts mixes, then use three-roll grinder to carry out grinding distribution to fineness < 20 μ m, viscosity 23000mPaS, obtains the special-purpose aluminium paste product of local aluminum back surface field crystal-silicon solar cell of sheet resistance <60m Ω/.
The special-purpose aluminium paste of local aluminum back surface field crystal-silicon solar cell that above-described embodiment 1～5 is obtained, by the technological process of production of local aluminum back surface field crystal-silicon solar cell, is printed on the monocrystalline silicon piece after making herbs into wool, diffusion, plated film.This aluminium paste good fluidity, can be good at filling hole or fluting on passivating film, and forms good ohmic contact with silicon base.After tested, photoelectric conversion efficiency >=20.0% of cell piece, by after battery laminated encapsulation, through EVA tearing test, records the pulling force >=10N that adheres to of aluminium back surface field.
Claims (8)
1. the special-purpose aluminium paste of local aluminum back surface field crystal-silicon solar cell, is characterized in that: the raw material by following proportion by weight is made: the aluminium powder of 70-80 part, the inorganic bond of 0.05-3 part, the organic bond of 20-30 part, the additive of 1-5 part.
2. the special-purpose aluminium paste of local aluminum back surface field crystal-silicon solar cell according to claim 1, is characterized in that: described aluminium powder is class ball aluminum powder, and purity is greater than 99.90% particle mean size 2.0-6.0 μ m.
3. the special-purpose aluminium paste of local aluminum back surface field crystal-silicon solar cell according to claim 1, is characterized in that: described inorganic bond is made by the raw material of following proportion by weight: SiO
25-15 part, B
2o
35-20 part, Al
2o
31-6 part, Bi
2o
3or PbO35-65 part, ZnO 5-20 part, TiO
21-3 part and ZrO
21-3 part.
4. the special-purpose aluminium paste of local aluminum back surface field crystal-silicon solar cell according to claim 1, it is characterized in that: described organic bond is made by the raw material of following proportion by weight: ethyl cellulose 4-10 part, phenolic resins 0.5-3 part, diethylene glycol monobutyl ether 5-15 part, terpinol 35-45 part, alcohol ester 12 3-10 parts, butyl carbitol acetate 25-40 part.
5. the special-purpose aluminium paste of local aluminum back surface field crystal-silicon solar cell according to claim 1, is characterized in that: described auxiliary agent is various commercial dispersants and/or levelling agent.
6. a preparation method for the special-purpose aluminium paste of local aluminum back surface field crystal-silicon solar cell claimed in claim 1, comprises the following steps:
(1) preparation of organic bond: the raw material that forms organic bond is dissolved in reactor, obtain homogeneous, transparent organic bond;
(2) preparation of inorganic bond: after the raw material that forms inorganic bond is mixed, pack in porcelain crucible, after being dried in digital display air dry oven, put into high temperature furnace melting, shrend post-drying, is then milled to below 8 μ m, dries and obtains inorganic bond;
(3) described aluminium powder, inorganic bond, organic bond and additive are mixed, then use three-roll grinder to carry out grinding distribution to fineness < 20 μ m, viscosity 15000-30000mPaS, obtains the special-purpose aluminium paste product of local aluminum back surface field crystal-silicon solar cell of sheet resistance <60m Ω/.
7. the preparation method of the special-purpose aluminium paste of local aluminum back surface field crystal-silicon solar cell according to claim 6, is characterized in that: the solution temperature in described step (1) in reactor is 80-120 ℃.
8. the preparation method of the special-purpose aluminium paste of local aluminum back surface field crystal-silicon solar cell according to claim 6, it is characterized in that: the baking temperature in described step (2) in digital display air dry oven is 135 ± 10 ℃, be 1-3h drying time, smelting temperature in high temperature furnace is 900-1100 ℃, and smelting time is 50-90 minute.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310322676.8A CN103545013B (en) | 2013-07-29 | 2013-07-29 | A kind of local aluminum special aluminium paste of back surface field crystal-silicon solar cell and preparation method thereof |
| PCT/CN2013/086032 WO2015014032A1 (en) | 2013-07-29 | 2013-10-28 | Aluminium paste dedicated for local aluminium back surface field crystalline silicon solar cell and preparation method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310322676.8A CN103545013B (en) | 2013-07-29 | 2013-07-29 | A kind of local aluminum special aluminium paste of back surface field crystal-silicon solar cell and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103545013A true CN103545013A (en) | 2014-01-29 |
| CN103545013B CN103545013B (en) | 2016-06-08 |
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| CN201310322676.8A Active CN103545013B (en) | 2013-07-29 | 2013-07-29 | A kind of local aluminum special aluminium paste of back surface field crystal-silicon solar cell and preparation method thereof |
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|---|---|
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| WO (1) | WO2015014032A1 (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104575685A (en) * | 2015-01-12 | 2015-04-29 | 浙江光隆能源科技股份有限公司 | Crystal silicon solar cell high adhesive force back surface field aluminum electrocondution slurry and preparation method |
| CN105470316A (en) * | 2015-12-09 | 2016-04-06 | 合肥海润光伏科技有限公司 | Back point contact crystalline silicon solar cell and manufacturing method therefor |
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| CN105810289A (en) * | 2016-05-20 | 2016-07-27 | 浙江光隆能源科技股份有限公司 | Aluminium paste used for back-polished polycrystalline solar cell and preparation method for aluminum paste |
| CN106251932A (en) * | 2016-08-31 | 2016-12-21 | 王立建 | PERC solar battery back electric field slurry |
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| CN107699047A (en) * | 2017-08-28 | 2018-02-16 | 广州市儒兴科技开发有限公司 | A kind of two-sided PERC crystal-silicon solar cells organic adhesive for aluminum paste of p-type and preparation method thereof |
| WO2018040569A1 (en) * | 2016-08-30 | 2018-03-08 | 南通天盛新能源股份有限公司 | Aluminum paste with high filling rate for local contact back surface field of perc cell and preparation method and use thereof |
| CN108511107A (en) * | 2018-02-28 | 2018-09-07 | 江苏国瓷泓源光电科技有限公司 | A kind of back of the body passivation aluminium paste and preparation method thereof containing porous structure powder |
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| US10608128B2 (en) | 2018-07-23 | 2020-03-31 | Pancolour Ink Co., Ltd | Aluminum paste used for local back surface field solar cell and local back surface field solar cell using the aluminum paste |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101425545A (en) * | 2008-04-30 | 2009-05-06 | 范琳 | Environment protection type silicon solar cell back electric field aluminum pulp and producing method thereof |
| CN101582462A (en) * | 2009-06-29 | 2009-11-18 | 广州市儒兴科技股份有限公司 | Lead-free Al-back-surface-field (BSF) paste for crystalline silicon solar battery and preparation method thereof |
| CN101914221A (en) * | 2010-08-21 | 2010-12-15 | 常州盈德能源科技有限公司 | Organic carrier composition for solar cell back surface field aluminium paste and preparation method thereof |
| CN102903421A (en) * | 2012-08-22 | 2013-01-30 | 广州市儒兴科技开发有限公司 | Crystalline silicon solar cell back side silver slurry with low silver content and preparation method thereof |
| CN103193391A (en) * | 2013-04-16 | 2013-07-10 | 江苏太阳新材料科技有限公司 | Lead-free glass powder for silver paste on back of crystalline silicon solar cell and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101651155B (en) * | 2009-09-09 | 2011-06-22 | 谭富彬 | Composition and preparation method of silicon solar battery electrode slurry |
| CN101916610B (en) * | 2010-08-21 | 2012-02-22 | 常州盈德能源科技有限公司 | Back field aluminum paste composition of solar battery and preparation method thereof |
| US20120152343A1 (en) * | 2010-12-16 | 2012-06-21 | E. I. Du Pont De Nemours And Company | Aluminum paste compositions comprising siloxanes and their use in manufacturing solar cells |
-
2013
- 2013-07-29 CN CN201310322676.8A patent/CN103545013B/en active Active
- 2013-10-28 WO PCT/CN2013/086032 patent/WO2015014032A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101425545A (en) * | 2008-04-30 | 2009-05-06 | 范琳 | Environment protection type silicon solar cell back electric field aluminum pulp and producing method thereof |
| CN101582462A (en) * | 2009-06-29 | 2009-11-18 | 广州市儒兴科技股份有限公司 | Lead-free Al-back-surface-field (BSF) paste for crystalline silicon solar battery and preparation method thereof |
| CN101914221A (en) * | 2010-08-21 | 2010-12-15 | 常州盈德能源科技有限公司 | Organic carrier composition for solar cell back surface field aluminium paste and preparation method thereof |
| CN102903421A (en) * | 2012-08-22 | 2013-01-30 | 广州市儒兴科技开发有限公司 | Crystalline silicon solar cell back side silver slurry with low silver content and preparation method thereof |
| CN103193391A (en) * | 2013-04-16 | 2013-07-10 | 江苏太阳新材料科技有限公司 | Lead-free glass powder for silver paste on back of crystalline silicon solar cell and preparation method thereof |
Cited By (14)
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| CN104575685A (en) * | 2015-01-12 | 2015-04-29 | 浙江光隆能源科技股份有限公司 | Crystal silicon solar cell high adhesive force back surface field aluminum electrocondution slurry and preparation method |
| CN105489670A (en) * | 2015-11-30 | 2016-04-13 | 何晨旭 | Aluminium oxide slurry for surface passivation for crystalline silicon solar cell and preparation method for passivating film |
| CN105470316A (en) * | 2015-12-09 | 2016-04-06 | 合肥海润光伏科技有限公司 | Back point contact crystalline silicon solar cell and manufacturing method therefor |
| CN105810289A (en) * | 2016-05-20 | 2016-07-27 | 浙江光隆能源科技股份有限公司 | Aluminium paste used for back-polished polycrystalline solar cell and preparation method for aluminum paste |
| WO2018040569A1 (en) * | 2016-08-30 | 2018-03-08 | 南通天盛新能源股份有限公司 | Aluminum paste with high filling rate for local contact back surface field of perc cell and preparation method and use thereof |
| US10373726B2 (en) | 2016-08-30 | 2019-08-06 | Nantong T-Sun New Energy Co., Ltd. | Highly filled back surface field aluminum paste for point contacts in PERC cells and preparation method thereof |
| CN106251932A (en) * | 2016-08-31 | 2016-12-21 | 王立建 | PERC solar battery back electric field slurry |
| CN106448806A (en) * | 2016-10-26 | 2017-02-22 | 盐城工学院 | Conductive paste for PERC solar cell, preparation method and application thereof |
| CN106847366A (en) * | 2017-01-18 | 2017-06-13 | 广州市儒兴科技开发有限公司 | A kind of electrical crystal silicon solar battery back aluminum slurry high and preparation method thereof |
| CN107699047A (en) * | 2017-08-28 | 2018-02-16 | 广州市儒兴科技开发有限公司 | A kind of two-sided PERC crystal-silicon solar cells organic adhesive for aluminum paste of p-type and preparation method thereof |
| CN107673623A (en) * | 2017-08-28 | 2018-02-09 | 广州市儒兴科技开发有限公司 | A kind of two-sided PERC aluminium pastes glass dust and preparation method thereof |
| CN107622812A (en) * | 2017-08-28 | 2018-01-23 | 广州市儒兴科技开发有限公司 | A kind of two-sided PERC crystal-silicon solar cells aluminium paste of p-type and preparation method thereof |
| CN107673623B (en) * | 2017-08-28 | 2020-09-15 | 广州市儒兴科技开发有限公司 | Glass powder for double-sided PERC aluminum paste and preparation method thereof |
| CN108511107A (en) * | 2018-02-28 | 2018-09-07 | 江苏国瓷泓源光电科技有限公司 | A kind of back of the body passivation aluminium paste and preparation method thereof containing porous structure powder |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015014032A1 (en) | 2015-02-05 |
| CN103545013B (en) | 2016-06-08 |
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