CN103544985A - Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories - Google Patents

Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories Download PDF

Info

Publication number
CN103544985A
CN103544985A CN201310302503.XA CN201310302503A CN103544985A CN 103544985 A CN103544985 A CN 103544985A CN 201310302503 A CN201310302503 A CN 201310302503A CN 103544985 A CN103544985 A CN 103544985A
Authority
CN
China
Prior art keywords
magnetic
layer
symmetry
electric charge
charge carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201310302503.XA
Other languages
Chinese (zh)
Other versions
CN103544985B (en
Inventor
W.H.巴特勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/549,331 external-priority patent/US9130151B2/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN103544985A publication Critical patent/CN103544985A/en
Application granted granted Critical
Publication of CN103544985B publication Critical patent/CN103544985B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)

Abstract

A method and system provide a magnetic junction. A free layer, a symmetry filter, and a pinned layer are provided. The free layer has a magnetic moment switchable between stable states when a write current is passed through the magnetic junction. The symmetry filter transmits charge carriers having a first symmetry with higher probability than charge carriers having another symmetry. The symmetry filter resides between the free layer and the pinned layer. The free layer and/or the pinned layer lies in a plane, has the charge carriers of the first symmetry in a spin channel at a Fermi level, lacks the charge carriers of the first symmetry at the Fermi level in another spin channel, and has a nonzero magnetic moment component perpendicular to the plane. The free layer and/or the pinned layer and the symmetry filter has at least one lattice mismatch of less than seven percent.

Description

For the method and system of the magnetic tunnel-junction that can use at magnetic store is provided
Background technology
Magnetic store, MAGNETIC RANDOM ACCESS MEMORY (MRAM) especially, due to them, low power consumption causes the increasing interest of people during for the potentiality of high read/write speed, permanance, non-volatile and operation.The MRAM of one type is spin-transfer torque random access memory (STT-RAM).STT-RAM utilizes by driving and passes through its electric current and the magnetic that write is at least in part tied.
Fig. 1 shows conventional magnetic tunnel-junction (MTJ) 10, and it can be in conventional STT-RAM.Conventional MTJ10 is usually located in end contact 11, adopts conventional seed layer 12, and top contact 16 times.Conventional MTJ10 comprises conventional antiferromagnetic (AFM) layer 20, conventional nailed layer 30, conventional tunnel barriers 40 and conventional free layer 50.Also show conventional overlayer 14.Conventional free layer 50 has changeable magnetic moment 52, and the magnetic moment 43 of conventional nailed layer 30 is stable.More specifically, the magnetic moment 32 of conventional nailed layer 30 is fixed by the interaction of the AFM layer 20 with conventional.
Conventional contact 12 and 16 at electric current perpendicular to plane (CPP) direction or along z axle drive current as shown in Figure 1.Become spin polarization carry angular momentum of the electric current that flows through conventional nailed layer 30.This angular momentum can be transferred to conventional free layer 50.If the angular momentum of q.s is so transmitted, the magnetic moment 52 of free layer 50 can be converted into the parallel or antiparallel of magnetic moment with nailed layer 30.
In order to improve the performance of STT-RAM, the various factors of conventional magnetic knot 10 is optimized in expectation.For example, conventional magnetic knot 10 can be designed as the critical current I of expectation c, this critical current is used for changing heat-staple conventional free layer 50.Critical current can be by estimating below:
I c = α η ⟨ H ⟩ eff H K 1.5 mA
<H> wherein effthe being seen average effective of the precession magnetic moment magnetic field by conventional free layer 50, H kbe that α is damping constant when change the required magnetic field of magnetic moment 52 when easy magnetizing axis applies, η is spinning moment efficiency, and 1.5mA represents electric current and is suitable for 60 thermal stability factor (Δ E/k bt), wherein Δ E represents the energy barrier of heat conversion, k bbe Boltzmann constant, T is absolute temperature.
Conventional magnetic knot 10 can be optimized to improve critical current.Design conventional magnetic knot 10 and can comprise that employing CoFe and/or CoFeB are for conventional nailed layer 30 and conventional free layer 50.CoFe and CoFeB tend to have magnetic moment in plane, as shown in by magnetic moment 32 and 52.In addition, conventional tunnel junction 40 is normally crystalline MgO.The combination of CoFe and CoFeB and MgO can cause lower critical current.
Although conventional magnetic tunnel-junction 10 works, expectation further improves.For example, magnetic that expectation can be used in following magnetic store knot, this magnetic store can be less, can be contracted to less size, adopt low critical current, can easily manufacture and/or have other characteristic.
Therefore, expect a kind of improved magnetic knot that can use in more highdensity STT-RAM.
Summary of the invention
Described is for the method and system of magnetic knot is provided.The method and system comprise provides free layer, symmetry filtrator (symmetry filter) and nailed layer.Free layer has the first magnetic moment, and when write current flows through magnetic knot, this first magnetic moment can be changed between a plurality of stable magnetic state.Symmetry filtrator is to have the first symmetric electric charge carrier than having the probability transmission that another symmetric electric charge carrier is high.Nailed layer has the second magnetic moment being pinned on specific direction.Symmetry filter bits is between free layer and nailed layer.At least one in free layer and nailed layer has the first symmetric electric charge carrier at Fermi level place in spin passage, and in another spin passage not at the first symmetric electric charge carrier at Fermi level place, be arranged in plane, and there is the non-zero magnetic moment component of the plane of being substantially perpendicular to.Free layer and/or nailed layer and symmetry filtrator have the lattice mismatch that at least one is less than 7 percent.In certain aspects, symmetry filtrator comprises at least one in Ge, GaAs and ZnSe.
Accompanying drawing explanation
Fig. 1 shows conventional magnetic tunnel-junction.
Fig. 2 shows the one exemplary embodiment of the magnetic knot that is suitable for using in magnetic store.
Fig. 3 shows in the free layer of the one exemplary embodiment of magnetic knot and/or nailed layer the one exemplary embodiment with the band structure of few son spin passage for many sons.
Fig. 4 shows based on symmetry properties of wave function by the one exemplary embodiment of symmetry filtrator transport charge carriers.
Fig. 5 shows another one exemplary embodiment of the magnetic knot that is suitable for using in magnetic store, wherein free layer and nailed layer have can meter Neng Liang place with symmetric state, this symmetry is preferentially transmitted by spin filtering device layer.
Fig. 6 shows another one exemplary embodiment of the magnetic knot that is suitable for using in magnetic store.
Fig. 7 shows another one exemplary embodiment of the magnetic knot that is suitable for using in magnetic store.
Fig. 8 shows another one exemplary embodiment of the magnetic knot that is suitable for using in magnetic store.
Fig. 9 shows another one exemplary embodiment of the magnetic knot that is suitable for using in magnetic store.
Figure 10 shows another one exemplary embodiment of the magnetic knot that is suitable for using in magnetic store.
Figure 11 shows another one exemplary embodiment of the two magnetic knots that are suitable for using in magnetic store.
Figure 12 shows the one exemplary embodiment of the magnetic store that utilizes magnetic knot.
Figure 13 shows the one exemplary embodiment for the manufacture of the method for the magnetic tunnel-junction that is suitable for using in magnetic store.
Embodiment
The device that one exemplary embodiment relates to the magnetic knot that can use in such as magnetic store at magnetic device and adopts such magnetic knot.Provide description below so that those of ordinary skills can manufacture and use the present invention, and provide under the background of patented claim and requirement thereof.To the various modifications of one exemplary embodiment and General Principle described herein and feature, will be easy to become obvious.Ad hoc approach and system aspects that one exemplary embodiment mainly provides in particular implementation are described.Yet method and system will valid function in other is implemented.Term such as " one exemplary embodiment ", " embodiment " and " another embodiment " can refer to identical or different embodiment and a plurality of embodiment.Embodiment will be described about having system and/or the device of specific features.Yet system and/or device can comprise than the more or less parts that illustrate, and can carry out the layout of these parts and the variation of type and do not departing from the scope of the present invention.One exemplary embodiment also will be described under the background of ad hoc approach with some step.Yet, the method and system for from the inconsistent method valid function with the step of different and/or other step and different order of one exemplary embodiment.Therefore, the embodiment shown in the present invention is not intended to be limited to, but be given the wide region consistent with principle described herein and feature.
For providing the method and system of magnetic knot to be described.The method and system comprise provides free layer, symmetry filtrator and nailed layer.Free layer has the first magnetic moment, and when write current is tied by magnetic, this first magnetic moment can be changed between a plurality of stable magnetic state.Symmetry filtrator is to have the first symmetric electric charge carrier than having the probability transmission that other symmetric electric charge carrier is high.Nailed layer has the second magnetic moment being pinned on specific direction.Symmetry filter bits is between free layer and nailed layer.At least one in free layer and nailed layer has the first symmetric electric charge carrier at Fermi level place in a spin passage, and in other spin passage not at the first symmetric electric charge carrier at Fermi level place, and in plane, and there is the non-zero magnetic moment component of the plane of being substantially perpendicular to.Free layer and/or nailed layer and symmetry filtrator have at least one lattice mismatch that is less than 7 percent.In certain aspects, this at least one lattice mismatch can be less than 3 percent or 4 percent.In certain aspects, symmetry filtrator comprises at least one in Ge, GaAs and ZnSe.
One exemplary embodiment is described having under the specific magnetic knot of certain ingredients and the background of magnetic store.Those skilled in the art will readily recognize that the present invention with have other and/or in addition composition and/or the magnetic knot of further feature and the use of storer consistent, this other and/or other composition and/or further feature and the present invention inconsistent.The method and system are also described under to the background of the current understanding of spin transfer phenomenon.Therefore the theoretical explanation that, those skilled in the art will readily recognize that the performance of the method and system is that this current understanding based on spin transfer is carried out.Those of ordinary skills also will readily recognize that, the method and system have under the background of structure of particular kind of relationship and describe with substrate.Yet those of ordinary skills will readily recognize that, the method is consistent with other structure with system.In addition, the method and system are to describe under synthetic and/or simple background at some layer.Yet those of ordinary skills will readily recognize that, described layer can have other structure.In addition, the method and system are described under the background of magnetic knot with certain layer.Yet those of ordinary skills will readily recognize that, also can adopt to have with the method and the inconsistent magnetic other and/or different layers of system and tie.And certain composition is described to magnetic, ferromagnetic and ferrimagnetic.As used herein, term magnetic can comprise ferromagnetic, ferrimagnetic or similar structure.Therefore, as used herein, term " magnetic " or " ferromagnetic " include but not limited to ferromagnet and ferrimagnet.The method and system are also described under the background of discrete component.Yet those of ordinary skills will readily recognize that, the method and system are consistent with the use of magnetic store with a plurality of elements.In addition, as used herein, " plane in " is substantially in the plane of one or more layers of magnetic knot or in parallel.On the contrary, " vertically " is corresponding to substantially vertical with one or more layers of magnetic knot direction.
Fig. 2 shows the one exemplary embodiment of magnetic knot 100.For example, magnetic knot 100 can be used in magnetic store, and wherein electric current is driven through magnetic knot 100 in CPP direction.For clarity, Fig. 2 does not draw in proportion, and some part of magnetic knot 100 may be omitted.Magnetic knot 100 comprises nailed layer 110, spin filtering device 120 and free layer 130.Magnetic knot 100 can also comprise other layer of (not shown).
Free layer 130 is the magnetospheres with changeable magnetic moment 131.Magnetic moment 131 is shown in two ends and has arrow to represent that magnetic moment 131 can change direction.When write current flows through magnetic and ties 100, magnetic moment 131 can be changed between stable magnetic state.Therefore,, in the one exemplary embodiment shown in Fig. 2, spin-transfer torque can be for the magnetic moment 131 of conversion free layer 130.For example, the electric current driving in z direction can be converted to magnetic moment 131 magnetic moment 111 that is either parallel or anti-parallel to nailed layer 110.In certain embodiments, free layer 130 has at least one nanometer and is not more than the thickness of ten nanometers.Yet other thickness is fine.Although be depicted as the simple layer with single magnetic moment 131, free layer 130 also can comprise a plurality of ferromagnetic layers and/or non-magnetosphere.For example, free layer 130 can be synthetic anti-ferromagnetic (SAF), comprises the magnetosphere such as Ru antiferromagnetic coupling or ferromagnetic coupling by one or more thin layers.Free layer 130 can be also other multilayer, and wherein one or more sublayers are magnetic.Also can adopt other structure for free layer 130.
In an illustrated embodiment, free layer 130 has along the easy magnetizing axis of magnetic moment 131.Magnetic moment 131 is stable along easy magnetizing axis.In an illustrated embodiment, magnetic moment has the component in plane.In other words, magnetic moment 131 has the component in the plane of free layer 130 substantially.Therefore, in an illustrated embodiment, magnetic moment 131 has the parallel plane component with x-y.In addition, free layer magnetic moment 131 has the component of the plane of being substantially perpendicular to.In other words, free layer magnetic moment 131 has the component of the z axle that is parallel to Fig. 2.In certain embodiments, magnetic moment 131 can be perpendicular to plane.In such embodiments, the in place component of magnetic moment 131 is zero.In such embodiments, free layer 130 can comprise the material such as AlMn.In some such embodiment, free layer 130 can be by L1 0the AlMn of phase forms, and has (100) axle perpendicular to this plane.In other embodiments, free layer 130 can comprise MnGa and/or MnIn.
Symmetry filtrator 120 is to transmit the layer with the first symmetric electric charge carrier than having the probability that another symmetric electric charge carrier is high.Transmission can be via tunnelling.In certain embodiments, symmetry filtrator 120 only has the first symmetric electric charge carrier with higher probability transmission.All other symmetry will have lower transmission probability.For example, symmetry filtrator 120 can be for having the crystalline MgO of (100) texture (texture).Layer like this transmits in (100) direction and has Δ with the high probability of the current carrier than having other symmetric wave functions 1the current carrier of symmetric wave function.Therefore, symmetry filtrator 120 can be considered to be similar to the mode effect of filtrator, and this filtrator allows to be had the first symmetric current carrier and pass through, and do not allow, does not have other symmetric current carrier and passes through.In other embodiments, can use other material.For example, can adopt SrSnO 3.Although the insulator as tunneling barrier is described for symmetry filtrator 120, in other embodiments, can adopt other material with other electrical characteristics.
Nailed layer 110 has the magnetic moment 111 being pinned on specific direction.For example, magnetic moment 111 can be by AFM layer (not shown), hard magnetic body (not shown) or via some other mechanism's pinning.Shown nailed layer 110 is simple layer, single magnetosphere, consists of.Although be depicted as the simple layer with single magnetic moment 111, nailed layer 110 can comprise multilayer.For example, nailed layer 110 can be the SAF that comprises the magnetosphere of or ferromagnetic coupling antiferromagnetic by one or more thin layers such as Ru.Nailed layer 110 can be also other multilayer, and wherein one or more sublayers are magnetic.Also can adopt other structure for nailed layer 110.
In an illustrated embodiment, magnetic moment 111 is pinned makes it have in place component.In other words, magnetic moment 111 has the component in the plane of nailed layer 110 substantially.Therefore, in an illustrated embodiment, magnetic moment 111 has the component that is parallel to x-y plane.In addition, magnetic moment 111 has the component of the plane of being substantially perpendicular to.In other words, magnetic moment 111 has the component of the z axle that is parallel to Fig. 2.In certain embodiments, magnetic moment 111 has component in zero plane.In such embodiments, nailed layer 110 can comprise the material such as AlMn.In some such embodiment, nailed layer 110 can be by L1 0mutually and the AlMn with (100) orientation form.In other embodiments, nailed layer 100 can comprise MnGa.
Free layer 130 and/or nailed layer 110 are constructed so that at least one in 110 and 130 of layer has at Fermi level place by the symmetric electric charge carrier of symmetry filtrator 120 transmission in a spin passage.In addition, at least one in free layer 130 and nailed layer 110 do not have the symmetric electric charge carrier at Fermi level place in another spin passage.Such free layer and/or nailed layer 110 also have it perpendicular to the magnetization component 131/111 of plane.For example, free layer 130 and/or nailed layer 110 can have at Fermi level place with symmetric electric charge carrier in many son spin passages, but at Fermi level place, do not have symmetric electric charge carrier in few son spin passage.In ferromagnetic material, many son spin passages have the electronics that its spin is alignd with net magnetization direction.Few son spin channel electron has the spin that it is antiparallel to many son spin channel electrons.For transmission, there is Δ 1the symmetry filtrator 120 of symmetric current carrier, for example, have the MgO of (100) texture, and layer 110 and/or 130 can have the Δ at Fermi level place in many son spin passages 1symmetric current carrier.Yet, lack son spin passage or do not there is Δ 1symmetric current carrier, or have and the isolated Δ of Fermi level 1symmetric current carrier.In certain embodiments, there are layer 110 and/or 130 magnetization also having perpendicular to plane of these characteristics.
For example, have been found that and comprise L1 0 free layer 130 and/or the nailed layer 110 of the AlMn of phase and (100) orientation have vertical magnetic moment and have the expectation symmetry at Fermi level place.More specifically, if nailed layer 110 comprises that its (100) axle is perpendicular to the L1 of plane 0the AlMn of phase, nailed layer 110 is by the magnetic moment 111 having perpendicular to plane.In addition, nailed layer 110 will have at Fermi level place with Δ in many son spin passages 1symmetric electric charge carrier.For many son spin passages, there is Δ 1therefore symmetric electric charge carrier more may pass through nailed layer 110 by transmission current.The nailed layer 110 with such composition and structure does not have Δ in few subchannel in (001) direction 1symmetric electric charge carrier.The band structure 160 of the one exemplary embodiment of layer is like this shown in Figure 3.Yet can be with shown in it should be noted that is only illustrational object, and the band structure that is not intended to accurately reflect such material.As visible in band structure, many son spin passages have the Δ at Fermi level place 1symmetric electric charge carrier.Thereby, Δ 1symmetry electric charge carrier probably carries electric current by nailed layer 110.The free layer 110 with identical crystal structure and composition can have similar character.Similarly, free layer 130 and/or nailed layer 110 can comprise MnGa and have and above-described those similar character.
Such nailed layer 110 and/or free layer 130 can for 120 combinations of spin filtering device, this spin filtering device 120 has Δ for transmission 1symmetric electric charge carrier has high probability, and has lower probability for the electric charge carrier that transmission has other symmetric wave functions.Therefore, although be expected in insulation spin filtering device and decay for all wave functions of electric charge carrier, Δ 1wave function decay is slower.Viewpoint from transmission and reflection, has Δ 1symmetric electric charge carrier is transmitted with the high probability of the electronics than having other symmetric wave functions.The electric charge carrier not being transmitted can be reflected.The MgO for example, with (100) orientation tends to have specific Δ with the high probability transmission of the electronics than having other symmetric wave functions 1the electronics of symmetric wave function.Fig. 4 shows with other symmetry situation and compares Δ 1the relatively slow decay of wave function in MgO.Because many son spin passages have the Δ at Fermi level place 1symmetry, so many charges of the electron electric current from Fermi level probably transmits by spin filtering device 120 in nailed layer 110 and free layer 130.As a result, can realize the spin polarization of high level.Therefore, can improve spinning moment and cause the efficiency changing, and reduce critical current.By this way, magnetic knot 100 is to be similar to the mode effect of conventional magnetic knot 100, and it adopts in many son spin passages has the Δ at Fermi level place 1electronics and in few son spin passage not at the Δ at Fermi level place 1the CoFe of electronics.
In addition,, for the material such as AlMn, magnetic moment 111/131 can be perpendicular to plane.Therefore, for AlMn, amount <H> eff/ H kbe 1 or close to 1.This feature also can reduce critical current.As a result, can improve the performance of magnetic knot 100.Therefore, magnetic knot 100 can use have improve performance magnetic store such as STT-RAM in.Other application of magnetic knot 100 is also fine.
In addition, symmetry filtrator 120 can have the other characteristic with respect to nailed layer 110 and/or free layer 130.In certain embodiments, in abutting connection with the layer of symmetry filtrator 120, the lattice mismatch between one or two in 110 and 130 can be contemplated to be low.For example, the lattice mismatch between layer 120 and layer 110 and/or 130 can be less than 7 percent.In certain embodiments, the lattice mismatch between layer 120 and layer 110 and/or 130 can be less than 3 percent or 4 percent.Lattice mismatch is for the difference between the crystallographic site of adjoining course.Therefore, lattice mismatch depend on layer grating constant and layer texture the two.Less lattice mismatch can cause magnetosphere 110 and/or 130 to have the probability of the increase of expectation magnetic anisotropy.In certain embodiments, MgO(001) can have and L1 0seven at least percent the lattice mismatch of AlMn.In certain embodiments, this larger lattice mismatch can cause nailed layer 110 and/or free layer 130 to have different magnetic anisotropy.The magnetic anisotropy that this mismatch causes can cause for magnetic moment in the plane of free layer 130 and/or nailed layer 110.In certain embodiments, this is less desirable.In addition, in some cases, lattice mismatch can adversely affect band structure.This can cause the polarization reducing of current carrier, and this is less desirable.Therefore, expectation reduces lattice mismatch to realize magnetic anisotropy and/or the spin polarization of expectation.For example, free layer 130 and/or nailed layer 110 can have higher perpendicular magnetic anisotropic and perpendicular to the magnetic moment of plane.Similarly, free layer 130 and/or nailed layer 110 can have more electronics and have still less (or not having) electronics in other spin passage in many son spin passages.
Reducing lattice mismatch can realize in many ways.In certain embodiments, the Lattice Contraction of symmetry filtrator 120 or expansion are with the lattice close to nailed layer 110 and/or free layer 130.For example, the grating constant of the MgO adopting in symmetry filtrator 120 can be greater than material (for example, the AlMn L1 adopting in nailed layer 110 and/or free layer 130 0) grating constant.Therefore, the expectation of the lattice of symmetry filter layer 120 is retracted.In certain embodiments, this is by adopting Ge, GaAs, ZnSe or other symmetry filtrator to realize, and they have the grating constant less than the grating constant of the MgO in symmetry filtrator 120.Therefore, the grating constant of symmetry filtrator 120 is close to the AlMn L1 for nailed layer 110/ free layer 130 0and/or the grating constant of other material.The lattice mismatch producing between symmetry filter layer 120 and nailed layer 110 and/or free layer 130 can be less than 7 percent.In certain embodiments, the lattice mismatch between symmetry filter layer 120 and layer 110 and/or 130 can be less than 3 percent or 4 percent.Therefore, the lattice for the material of symmetry layer 120 can be retracted with the lattice close to nailed layer 110 and/or free layer 130.In other embodiments, the lattice of nailed layer 110 and/or free layer 130 can be extended.In certain embodiments, this can be by doping or other means that can increase the grating constant of the AlMn that adopts in layer 110 and/or 130 or other material realize.In other embodiments, other material can be for layer 110 and/or 130.For example, can adopt MnGa and/or MnIn.Yet, be expected to be useful in the means not excessively interfere with layer 110 and 130 the magnetic property that closer mate lattice.
Fig. 5 shows another one exemplary embodiment of the magnetic knot 100 ' that can use in magnetic store.For clarity, Fig. 5 is not in proportion.Magnetic knot 100 ' comprises and the magnetic knot 100 similar compositions shown in Fig. 2.Therefore, similarly composition is indicated similarly.Therefore, magnetic knot 100 ' comprises nailed layer 110 ', symmetry filtrator 120 ' and free layer 130 ', is similar to respectively nailed layer 110, symmetry filtrator 120 and free layer 130.Also show seed layer 102, pinning layer 104 and overlayer 106.In other embodiments, seed layer 102, pinning layer 104 and/or overlayer 106 can be omitted.In addition, can also provide contact (not shown) with drive current in the direction in expectation.Seed layer 102 can be used to the expectation crystal structure of pinning layer 104 that template is provided.Pinning layer 104 can comprise AFM layer, hard magnetic body or for magnetized other material of pinning nailed layer 110 '.
In an illustrated embodiment, the magnetic moment 111 ' of nailed layer 110 ' and the magnetic moment 131 ' of free layer 130 ' are perpendicular to plane.In addition, free layer 130 ' and nailed layer 110 ' the two be constructed so that layer 110 ' and 130 ' each in the first spin passage spins passages such as many sons, have at Fermi level and sentence the symmetric electric charge carrier that higher probability is transmitted by symmetry filtrator.In certain embodiments, at least one in free layer 130 ' and nailed layer 110 ' for example, do not have the symmetric electric charge carrier at Fermi level place in other passage that spins (, few son spin passage).For example, nailed layer 110 ' and free layer 130 ' the two can comprise thering is L1 0crystal structure and perpendicular to the AlMn of (100) axle of plane.Such material has the Δ at Fermi level place in many son spin passages 1electronics, but in few son spin passage, there is no the Δ in (100) direction 1electronics.MgO or the SrSnO in addition, with (100) texture 3can be used as spin filtering device 120 '.In certain embodiments, the lattice mismatch between symmetry filtrator 120 ' and layer 110 ' and/or 130 ' is less than 7 percent.In certain embodiments, the lattice mismatch between symmetry filtrator 120 ' and layer 110 ' and/or 130 ' can be less than 3 percent or 4 percent.For example, symmetry filtrator 120 ' can comprise Ge, GaAs and or ZnSe.Nailed layer 110 ' and/or free layer 130 ' can comprise MnGa and/or MnIn.
Magnetic knot 100 ' is shared the benefit of magnetic knot 100.Because magnetic moment 111 ' and 131 ' is perpendicular to plane, so amount <H> eff/ H kbe one.In addition, can improve spin polarization efficiency.Therefore, can improve the performance of magnetic knot.
Fig. 6 shows the magnetic knot 100 that is suitable for using in magnetic store " another one exemplary embodiment.For clarity, Fig. 6 is not in proportion.Magnetic knot 100 " comprise and magnetic knot 100/100 ' similar composition.Therefore, similarly composition is indicated similarly.Therefore, magnetic knot 100 " comprise nailed layer 110 ", symmetry filtrator 120 " and free layer 130 ", be similar to respectively nailed layer 110/110 ', symmetry filtrator 120/120 ' and free layer 130/130 '.Also show seed layer 102 ', pinning layer 104 ' and overlayer 106 '.In other embodiments, seed layer 102 ', pinning layer 104 ' and/or overlayer 106 ' can be omitted.Seed layer 102 ' can be used to the expectation crystal structure of pinning layer 104 ' that template is provided.Pinning layer 104 ' can comprise AFM layer, hard magnetic body or for pinning nailed layer 110 " magnetized other material.In addition, can also provide contact (not shown) with drive current in the direction in expectation.
In an illustrated embodiment, free layer 130 " magnetic moment 131 " perpendicular to plane.In addition, free layer 130 " be constructed so that this layer and 130 ' has at Fermi level and sentences higher probability by the symmetric electric charge carrier of symmetry filtrator 120'' transmission in spin passage spins passages such as many sons.In certain embodiments, free layer 130 " in spinning passage, other spin passage such as few son there is no the symmetric electric charge carrier at Fermi level place.For example, free layer 130 " can comprise thering is L1 0crystal structure and perpendicular to the AlMn of (100) axle of plane.MgO or the SrSnO in addition, with (100) texture 3can be used as spin filtering device 120 ".Nailed layer 110 " can comprise other magnetic material.For example, nailed layer 110 " comprise bcc(001) Fe, bcc(001) Co and/or bcc(001) FeCo.In certain embodiments, nailed layer 110 " can also there is its magnetization perpendicular to plane (not shown in Fig. 6).Yet other orientation is fine.In certain embodiments, symmetry filtrator 120 " and layer 110 " and/or 130 " between lattice mismatch be less than 7 percent.In certain embodiments, symmetry filter layer 120 " and layer 110 " and/or 130 " between lattice mismatch can be less than 3 percent or 4 percent.For example, symmetry filtrator 120 " can comprise Ge, GaAs and/or ZnSe.Nailed layer 110 " and/or free layer 130 " can comprise MnGa and/or MnIn.
Magnetic knot 100 " share the benefit of magnetic knot 100/100 '.Because magnetic moment 131 ' is perpendicular to plane, so amount <H> eff/ H kbe one.In addition, can improve spin polarization efficiency.Therefore, can improve magnetic knot 100 " performance.
Fig. 7 shows the magnetic knot 100 ' that is suitable for using in magnetic store ' ' another embodiment.For clarity, Fig. 7 is not in proportion.Magnetic knot 100 ' ' ' comprise and magnetic knot 100/100 '/100 " similar composition.Therefore, similarly composition is indicated similarly.Therefore, magnetic knot 100 ' ' ' comprise nailed layer 110 ' ' ', symmetry filtrator 120 ' ' ' and free layer 130 ' ' ', be similar to respectively nailed layer 110/110 '/110 ", symmetry filtrator 120/120 ' 120 " and free layer 130/130 '/130 ".Also show seed layer 102 ", pinning layer 104 " and overlayer 106 ".In other embodiments, seed layer 102 ", pinning layer 104 " and/or overlayer 106 " can be omitted.Seed layer 102 " can be used to pinning layer 104 " expectation crystal structure template is provided.The magnetized material of pinning layer 104 ' ' ' can comprise AFM layer, hard magnetic body or other for pinning nailed layer 100 ' ' '.In addition, can also provide contact (not shown) with drive current in the direction in expectation.
In an illustrated embodiment, nailed layer 110 ' ' ' magnetic moment 111 ' ' ' perpendicular to plane.In addition, nailed layer 110 ' ' ' be constructed so that nailed layer 110 ' ' ' have at Fermi level place by symmetry filtrator 120 ' in many son spin passages ' ' the symmetric electric charge carrier of transmission.In certain embodiments, nailed layer 110 ' ' ' in few son spin passage, there is no the symmetric electric charge carrier at Fermi level place.For example, nailed layer 110 ' ' ' can comprise thering is L1 0crystal structure and perpendicular to the AlMn of (100) axle of plane.MgO or the SrSnO in addition, with (100) texture 3can be used as spin filtering device 120 ' ' '.Free layer 130 ' ' ' can comprise other magnetic material.For example, free layer 130 ' ' ' comprise bcc(001) Fe, bcc(001) Co and/or bcc(001) FeCo.In an illustrated embodiment, free layer 130 ' ' ' there is it perpendicular to the magnetization 131 ' of plane ' '.Yet other orientation is fine.In certain embodiments, symmetry filtrator 120 ' ' ' and layer 110 ' ' ' and/or 130 ' ' ' between lattice mismatch be less than 7 percent.In certain embodiments, symmetry filtrator 120 ' ' ' and layer 110 ' ' ' and/or 130 ' ' ' between lattice mismatch can be less than 3 percent or 4 percent.For example, symmetry filtrator 120 ' ' ' can comprise Ge, GaAs and/or ZnSe.Nailed layer 110 ' ' ' and/or free layer 130 ' ' ' can comprise MnGa and/or MnIn.
The benefit of magnetic knot 100 ' ' ' share magnetic knot 100/100 '/100 ' '.Because magnetic moment 111 ' ' ' perpendicular to plane, so amount <H> eff/ H kbe one.In addition, can improve spin polarization efficiency.Therefore, can improve magnetic knot 100 ' ' ' performance.
Fig. 8 shows another one exemplary embodiment of the magnetic knot 200 that is suitable for using in magnetic store.For clarity, Fig. 8 is not in proportion.Magnetic knot 200 comprises and magnetic knot 100/100 ' the similar composition shown in Fig. 2 and 5.Therefore, similarly composition is indicated similarly.Therefore, magnetic knot 200 comprises nailed layer 210, symmetry filtrator 220 and free layer 230, is similar to respectively nailed layer 110/110 ', symmetry filtrator 120/120 ' and free layer 130/130 '.Also show seed layer 202, pinning layer 204 and overlayer 206, be similar to respectively seed layer 102, pinning layer 104 and overlayer 106.In other embodiments, seed layer 202, pinning layer 204 and/or overlayer 206 can be omitted.In addition, can also provide contact (not shown) with drive current in the direction in expectation.
In an illustrated embodiment, nailed layer 210 and free layer 230 are SAF.Therefore, nailed layer 210 comprises the ferromagnetic layer 212 and 216 of separating by nonmagnetic spacer-layer 214.Similarly, free layer 230 comprises the ferromagnetic layer 232 and 236 of separating by nonmagnetic spacer-layer 234. Wall 214 and 234 typically is Ru.In an illustrated embodiment, the magnetic moment 211 of nailed layer 210 and 215 and the magnetic moment 231 and 235 of free layer 230 perpendicular to plane.In addition, free layer 130 ' and nailed layer 110 ' the two be constructed so that layer 210 and 230 each at spin passage, have at Fermi level place by the symmetric electric charge carrier of symmetry filtrator 220 transmission in such as many son spin passages.In certain embodiments, at least one in free layer 230 and nailed layer 210 do not have the symmetric electric charge carrier at Fermi level place in other spin passage such as few son spins passage.For example, the ferromagnetic layer 212 of nailed layer 210 and 216 and the ferromagnetic layer 232 of free layer 230 and 236 the two can comprise thering is L1 0crystal structure and perpendicular to the AlMn of (100) axle of plane.Yet for such embodiment, wall 214 and 234 can allow the antiferromagnetic coupling between ferromagnetic layer 212 and 216 and between layer 232 and 236.In addition, wall 214 and 234 provides suitable growth templates by the expectation crystal structure for layer 216 and 236 and texture.MgO or the SrSnO in addition, with (100) texture 3can be used as spin filtering device 220.In certain embodiments, the lattice mismatch between symmetry filtrator 220 and layer 216 and/or 232 is less than 7 percent.In certain embodiments, the lattice mismatch between symmetry filtrator 220 and layer 216 and/or 232 can be less than 3 percent or 4 percent.For example, symmetry filtrator 220 can comprise Ge, GaAs and/or ZnSe.Layer 232 and/or layer 216 can comprise MnGa and/or MnIn.
Fig. 9 shows another one exemplary embodiment of the magnetic knot 200 ' that is suitable for using in magnetic store.For clarity, Fig. 9 is not in proportion.Magnetic knot 200 ' comprises and magnetic knot 100/100 '/200 similar compositions.Therefore, similarly composition is indicated similarly.Therefore, magnetic knot 200 ' comprises nailed layer 210 ', symmetry filtrator 220 ' and free layer 230 ', is similar to respectively layer 210/110/110 ', 220/120/120 ' and 230/130/130 '.Also show seed layer 202 ', pinning layer 204 ' and overlayer 206 '.In other embodiments, seed layer 202', pinning layer 204 ' and/or overlayer 206 ' can be omitted.Seed layer 202 ' can be used to the expectation crystal structure of pinning layer 204 ' that template is provided.Pinning layer 204 ' can comprise AFM layer, hard magnetic body or for pinning nailed layer 210 ' ' magnetized other materials.In addition, can also provide contact (not shown) with drive current in the direction in expectation.
In an illustrated embodiment, free layer 230 ' is SAF, comprises and layer 232,234 and 236 similar layers 232 ', 234 ' and 236 '.In an illustrated embodiment, the magnetic moment 231 and 235 of free layer 230 ' is perpendicular to plane.In other embodiments, the magnetic moment of nailed layer 210 ' is perpendicular to plane.In addition, free layer 230 ' is constructed so that layer 230 ' has at Fermi level place by the symmetric electric charge carrier of symmetry filtrator 220' transmission in many son spin passages.In certain embodiments, free layer 230 ' does not have the symmetric electric charge carrier at Fermi level place in few son spin passage.For example, free layer 230 ' can comprise having L1 0crystal structure and perpendicular to the AlMn of (100) axle of plane.MgO or the SrSnO in addition, with (100) texture 3can be used as spin filtering device 220 '.
In an illustrated embodiment, the magnetic moment 231 ' of free layer 230 ' and 235 ' is perpendicular to plane.In addition, free layer 230 ' is constructed so that layer 230 ' has at Fermi level and sentences the symmetric electric charge carrier that higher probability is transmitted by symmetry filtrator in a spin passage.For example, many son spin passages can be included in the symmetric electric charge carrier at Fermi level place.In certain embodiments, free layer 230 ' sentences at Fermi level the symmetric electric charge carrier that higher probability is transmitted in other spin passage such as few son spins passage.For example, free layer 130 ' can comprise having L1 0crystal structure and perpendicular to the AlMn of (100) axle of plane.MgO or the SrSnO in addition, with (100) texture 3can be used as spin filtering device 220 '.Nailed layer 210 ' can comprise other magnetic material.For example, nailed layer 210 ' comprises bcc(001) Fe, bcc(001) Co and/or bcc(001) FeCo.Although the magnetic moment of nailed layer 211 ' is depicted as perpendicular to plane, other orientation is fine.In certain embodiments, the lattice mismatch between symmetry filtrator 220 ' and layer 210 ' and/or 232 ' is less than 7 percent.In certain embodiments, the lattice mismatch between symmetry filtrator 220 ' and layer 210 ' and/or 232 ' can be less than 3 percent or 4 percent.For example, symmetry filtrator 220 ' can comprise Ge, GaAs and/or AnSe.Layer 232 ' and/or layer 210 ' can comprise MnGa and/or MnIn.
Figure 10 shows the magnetic knot 200 that is suitable for using in magnetic store " another one exemplary embodiment.For clarity, Figure 10 is not in proportion.Magnetic knot 200 " comprise and magnetic knot 100/100 "/200/200 ' similar composition.Therefore, similarly composition is indicated similarly.Therefore, magnetic knot 200 " comprise nailed layer 210 ", symmetry filtrator 220 " and free layer 230 ", be similar to respectively layer 210/210 '/110/110 ', 220/220 '/120/120 ' and 230/230 '/130/130 '.Also show seed layer 202 ", pinning layer 204 " and overlayer 206 ".In other embodiments, seed layer 202 ", pinning layer 204 " and/or overlayer 206 " can be omitted.Seed layer 202 " can be pinning layer 204 " expectation crystal structure template is provided.Pinning layer 204 " can comprise AFM layer, hard magnetic body or for pinning nailed layer 210 " magnetized other materials.In addition, can also provide contact (not shown) with drive current in the direction in expectation.
In an illustrated embodiment, nailed layer 210 " be SAF, comprise and layer 212,214 and 216 similar layers 212 ', 214 ' and 216 '.In an illustrated embodiment, nailed layer 210 " magnetic moment 211 ' and 215 ' perpendicular to plane.In other embodiments, free layer 230 " magnetic moment perpendicular to plane.In addition, nailed layer 210 " be constructed so that layer 210 " for example, in spin passage (, many son spin passages), have at Fermi level and sentence higher probability by the symmetric electric charge carrier of symmetry filtrator 220'' transmission.In certain embodiments, nailed layer 210 " for example, in other spin passage (, few son spin passage), there is no the symmetric electric charge carrier at Fermi level place.For example, nailed layer 210 " can comprise thering is L1 0crystal structure and perpendicular to the AlMn of (100) axle of plane.MgO or the SrSnO in addition, with (100) texture 3can be used as spin filtering device 220 ".
In an illustrated embodiment, nailed layer 210 " magnetic moment 211 and 215 perpendicular to plane.In addition, nailed layer 210 " be constructed so that layer 210 " at a spin passage, have at Fermi level in such as many son spin passages and sentence higher probability by the symmetric electric charge carrier of symmetry filtrator 220'' transmission.In certain embodiments, nailed layer 210 " in spinning passage, other spin passages such as few son there is no the symmetric electric charge carrier at Fermi level place.For example, nailed layer 210 " can comprise thering is L1 0crystal structure and perpendicular to the AlMn of (100) axle of plane.MgO or the SrSnO in addition, with (100) texture 3can be used as spin filtering device 220 ".Free layer 230 " can comprise other magnetic material.For example, free layer 230 " comprise bcc(001) Fe, bcc(001) Co and/or bcc(001) FeCo.Although the magnetic moment of free layer 231 " be depicted as perpendicular to plane, other orientation is fine.In certain embodiments, symmetry filtrator 220 " and layer 216 ' and/or 230 " between lattice mismatch be less than 7 percent.In certain embodiments, symmetry filtrator 220 " and layer 216 ' and/or 230 " between lattice mismatch can be less than 3 percent or 4 percent.For example, symmetry filtrator 220 " can comprise Ge, GaAs and/or ZnSe.Layer 230 " and/or layer 216 ' can comprise MnGa and/or MnIn.
Magnetic knot 200,200 ' and 200 " share magnetic and tie 100/100 '/100 " benefit.Because layer 210/210 '/210 " and 230/230 '/230 " magnetic moment can be perpendicular to plane, so measure <H> eff/ H kbe one.In addition, can improve spin polarization efficiency.Therefore, can improve magnetic knot 200,200 ' and 200 " performance.
Figure 11 shows another one exemplary embodiment of the magnetic knot 300 that is suitable for using in magnetic store.For clarity, Figure 11 is not in proportion.Magnetic knot 300 comprises and the knot of the magnetic shown in Fig. 2 and 5-10 100/100 '/100 "/200/200 '/200 " similar composition.Therefore, similarly composition similarly indicates.Therefore, magnetic knot 300 comprises nailed layer 310, symmetry filtrator 320 and free layer 330, is similar to respectively nailed layer 110/110 '/210, symmetry filtrator 120/120 '/220 and free layer 130/130 '/230.Also show seed layer 302, pinning layer 304 and overlayer 306, be similar to respectively seed layer 102/102 '/102 "/202/202 '/202 ", pinning layer 104/104 '/104 "/204/204 '/204 " 204 ' ' ' and overlayer 106/106 '/106 "/206/206 '/206 ".In other embodiments, seed layer 302, pinning layer 304 and/or overlayer 306 can be omitted.Magnetic knot 300 also comprises other wall 340, other nailed layer 350 and other pinning layer 360.Therefore, magnetic knot 300 can be considered to comprise be similar to magnetic cell 100/100 '/100 "/200/200 '/200 " magnetic cell add other layer 340,350 and 360.
In an illustrated embodiment, other wall 340 can be tunneling barrier layer.In other embodiments, other wall 340 can for conduction.In addition, in certain embodiments, other wall 340 can be symmetry filtrator, all MgO described above.Other nailed layer 350 can be similar to layer 110/110 '/110 "/110 ' ' '/210/210 '/210 ".Therefore, nailed layer 350 can have at Fermi level and sentence higher probability by the symmetric electric charge carrier of symmetry filtrator 320 transmission in spin passage spins passages such as many sons.In certain embodiments, other nailed layer 350 does not have the symmetric electric charge carrier at Fermi level place in another spin passage such as few son spins passage.For example, nailed layer 350 both can comprise thering is L1 0crystal structure and perpendicular to the AlMn of (100) axle of plane.The magnetic moment 351 of other nailed layer can be therefore perpendicular to plane.Although it should be noted that magnetic moment 311 and 351 is depicted as antiparallel, can adopt other configuration.In addition, can adopt MgO or the SrSnO with (100) texture 3thereby wall 340 is as spin filtering device.In addition,, although be depicted as simple layer, one or more in 310,330 and 350 of layer can be SAF.In certain embodiments, the lattice mismatch between symmetry filtrator 320 and layer 330 and/or 310 is less than 7 percent.In certain embodiments, the lattice mismatch between symmetry filtrator 320 and layer 330 and/or 310 can be less than 3 percent or 4 percent.For example, symmetry filtrator 320 can comprise Ge, GaAs and/or ZnSe.Layer 330 and/or layer 310 can comprise MnGa and/or MnIn.Similarly, if layer 340 is symmetry filtrators, the lattice mismatch between symmetry filtrator 340 and layer 330 and/or 360 is less than 7 percent.In certain embodiments, the lattice mismatch between symmetry filtrator 340 and layer 330 and/or 360 can be less than 3 percent or 4 percent.For example, symmetry filtrator 340 can comprise Ge, GaAs and/or ZnSe.Layer 330 and/or layer 360 can comprise MnGa and/or MnIn.
Two magnetic knot 300 is shared magnetic knot 100/100 '/100 "/200/200 '/200 " benefit.Because layer 210/210 '/210 "/310,230,230 '/230 "/330 and optional 350 magnetic moment can be perpendicular to plane, so amount <H> eff/ H kbe one.In addition, can improve spin polarization efficiency.Therefore, can improve the performance of magnetic knot 300.
Figure 12 shows the one exemplary embodiment of the magnetic store 400 that utilizes two magnetic knots.In an illustrated embodiment, magnetic store is STT-RAM400.Magnetic store 400 comprises read/write column selector/ driver 402 and 406 and wordline selector/driver 404.Magnetic store 400 also comprises storage unit 410, and storage unit 410 comprises magnetic knot 412 and selection/isolating device 414.Magnetic knot 412 can be any magnetic knot 100/100 '/100 "/200/200 '/200 "/300.Read/write column selector/ driver 402 and 406 can be for drive current optionally through bit line 403 and therefore through unit 410.Selection/isolating device 414 that wordline selector/driver 404 is coupled by the word line 405 that makes and select is opened and the row of selectively unlocking magnetic store 4000.
Because magnetic store 400 can adopt magnetic knot 100/100 '/100 "/200/200 '/200 "/300, so magnetic store 400 is shared magnetic knot 100/100 '/100 "/200/200 '/200 " benefit.Therefore, can improve the performance of magnetic store 400.
Figure 13 illustrates the one exemplary embodiment for the manufacture of the method 500 of the two MTJ that are suitable for using in magnetic store.Method 500 is described under the background of magnetic knot 100/100 '.Yet method 500 also can be for the manufacture of other magnetic knot.In addition,, in order to simplify, some step can be omitted.In addition, method 500 can in conjunction with and/or adopt in addition and/or other step.Method 500 is also described under the background of manufacturing single magnetic knot.Yet method 500 forms a plurality of parallel magnetic knots conventionally, for example, for storer 300.
By step 502, provide magnetic knot stacking.Stacking pinned tunic, spin filtering device film and the free tunic of comprising of magnetic knot.Stackingly can also comprise interval tunic and other pinned tunic, if manufacture magnetic knot 300.In certain embodiments, stacking can also the annealing in step 502 of magnetic knot.
Magnetic knot 100/100 '/100 "/200/200 '/200 "/300 by step 504, by magnetic, tie stacking restriction.Step 504 comprises provides covering magnetic to tie the mask of a stacking part, then remove magnetic ties stacking expose portion.Magnetic knot 100/100 '/100 "/200/200 '/200 "/300 comprise nailed layer 110/110 '/110 that limited by the first pinned tunic "/110 ' ' '/210/210 ' 210 " 310, the symmetry filtrator 120/120 '/120 that limited by spin filtering device film "/220/220 '/220 " 320 and free layer 130/130 '/130 that limited by free tunic "/130 ' ' '/230/230 '/230 "/330.In certain embodiments, magnetic knot 300 also comprises wall 340 and other nailed layer 350.
Nailed layer 110/110 '/110 "/110 ' ' '/210/210 ' 210 " 310 direction of magnetization sets by step 506.For example, step 506 can be by carrying out as follows: in the direction of expectation, apply magnetic field heating magnetically knot 100/100 '/100 simultaneously "/200/200 '/200 "/300, cooling magnetic knot 100/100 '/100 then exist in this magnetic field in the situation that "/200/200 '/200 "/300.
Therefore, can manufacture magnetic knot 100/100 '/100 "/200/200 '/200 "/300.The magnetic knot of manufacturing by method 500 and/or magnetic store 400 are shared magnetic knot 100/100 '/100 "/200/200 '/200 " and/or the benefit of magnetic store 300.Therefore, can improve magnetic knot 100/100 '/100 "/200/200 '/200 " and/or the performance of magnetic store 300.
Described for magnetic knot being provided and utilizing magnetic store to tie the method and system of the storer of manufacturing.The method and the system one exemplary embodiment shown in basis are described, and those of ordinary skill in the art, by easy to understand, can change embodiment, and any variation will be in the spirit and scope of described method and system.Therefore, those of ordinary skills can much revise and not depart from the spirit and scope of claims.
The application is at the exercise question that on January 11st, 2010 submits to, to be the part continuation application of " Method and System for Providing Magnetic Tunneling Junctions Usable in Spin Transfer Torque Magnetic Memories " and the assignee's who transfers the application patent application serial number No.12/685418 common co-pending.
The present invention's support by U.S. government under the Grant/Contract No.HR0011-09-C-0023 being authorized by DARPA is carried out.U.S. government retains some right in the present invention.Distribute and only license to U.S. government's structure.

Claims (27)

1. a magnetic is tied, and comprising:
Free layer, has the first magnetic moment, and when write current flows through described magnetic knot, this first magnetic moment can be changed between a plurality of stable magnetic state;
Symmetry filtrator, to transmit the first symmetric electric charge carrier than having the high probability of the second symmetric electric charge carrier;
Nailed layer, has the second magnetic moment being pinned on specific direction, and this symmetry filter bits is between described free layer and described nailed layer;
At least one in wherein said free layer and described nailed layer has the first symmetric electric charge carrier at Fermi level place in spin passage, in another spin passage, there is no the first symmetric electric charge carrier at Fermi level place, be located substantially in plane and have the non-zero magnetic moment component that is substantially perpendicular to this plane, at least one in described symmetry filtrator and described free layer and described nailed layer has the lattice mismatch that is less than 7 percent.
2. magnetic as claimed in claim 1 is tied, and wherein said lattice mismatch is less than 4 percent.
3. magnetic as claimed in claim 1 is tied, and at least one in wherein said free layer and described nailed layer comprises AlMn.
4. magnetic as claimed in claim 1 is tied, and wherein said symmetry filtrator comprises at least one in Ge, GaAs and ZnSe.
5. magnetic as claimed in claim 1 is tied, and wherein said the first magnetic moment is substantially perpendicular to plane.
6. magnetic as claimed in claim 1 is tied, and wherein said the second magnetic moment is substantially perpendicular to plane.
7. magnetic as claimed in claim 1 is tied, and at least one in wherein said free layer and described nailed layer comprises at least one in MnGa and MnIn.
8. magnetic as claimed in claim 1 is tied, and wherein said symmetry filtrator is tunneling barrier layer.
9. magnetic as claimed in claim 1 is tied, and at least one in wherein said free layer and described nailed layer is synthetic anti-ferromagnet.
10. magnetic as claimed in claim 1 is tied, and also comprises:
Wall; And
Other nailed layer, this wall is between described free layer and described other nailed layer, and described other nailed layer has the 3rd magnetic moment.
11. magnetic knots as claimed in claim 10, wherein said other nailed layer comprises AlMn.
12. magnetic knots as claimed in claim 10, wherein said wall is other symmetry filtrator.
13. magnetic knots as claimed in claim 11, at least one in wherein said other symmetry filtrator and described free layer and described other nailed layer has the other lattice mismatch that is less than 7 percent.
14. magnetic knots as claimed in claim 13, wherein said other lattice mismatch is less than 4 percent.
15. magnetic knots as claimed in claim 12, wherein said other symmetry filtrator comprises at least one in Ge, GaAs and ZnSe.
16. magnetic knots as claimed in claim 1, at least one in wherein said free layer, described nailed layer and described other nailed layer is synthetic antiferromagnet.
17. 1 kinds of magnetic knots that use in magnetic memory device, comprising:
Free layer, be arranged essentially parallel to plane, comprise the AlMn with (001) axle that is substantially perpendicular to this plane, and there is the first magnetic moment that can change when write current flows through described magnetic knot between a plurality of stable magnetic state, this first magnetic moment has the first nonzero component that is substantially perpendicular to this plane, described free layer has the first symmetric electric charge carrier at Fermi energy place in the spin of son more than first passage, and there is no described the first symmetric electric charge carrier in first few son spin passage;
Symmetry filtrator, transmission has described the first symmetric electric charge carrier, and stops and have the second symmetric electric charge carrier different from described the first symmetry, and described symmetry filtrator comprises at least one in Ge, GaAs and ZnSe;
Nailed layer, be arranged essentially parallel to described plane, comprise the AlMn with (001) axle that is substantially perpendicular to this plane, and there is the second magnetic moment being pinned on specific direction, this second magnetic moment has the second nonzero component that is substantially perpendicular to this plane, this nailed layer has described the first symmetric electric charge carrier at Fermi energy place in the spin of son more than second passage, and there is no described the first symmetric electric charge carrier in second few son spin passage, described symmetry filter bits is between described free layer and described nailed layer.
18. 1 kinds of magnetic stories, comprising:
A plurality of magnetic cells, each of the plurality of magnetic cell comprises at least one selector and at least one magnetic knot, described at least one magnetic knot comprises free layer, nailed layer and the symmetry filtrator between described free layer and described nailed layer, described free layer has when write current flows through described magnetic knot the first magnetic moment of changing between can a plurality of stable magnetic state, described symmetry filtrator is to have the first symmetric electric charge carrier than having the probability transmission that the second symmetric electric charge carrier is high, described nailed layer has the second magnetic moment being pinned on specific direction, at least one in described free layer and described nailed layer has described the first symmetric electric charge carrier at Fermi level place in the first spin passage, in other spin passage, there is no the first symmetric electric charge carrier at Fermi level place, be located substantially in plane and there is the non-zero magnetic moment component that is substantially perpendicular to this plane, at least one in described symmetry filtrator and described free layer and described nailed layer has the lattice mismatch that is less than 7 percent,
Multiple bit lines, couples with described a plurality of magnetic cells; And
Many word lines, couple with described a plurality of magnetic cells.
19. magnetic stories as claimed in claim 18, wherein said lattice mismatch is less than 4 percent.
20. magnetic stories as claimed in claim 18, wherein said symmetry filtrator comprises at least one in Ge, GaAs and ZnSe.
21. 1 kinds of knots of the magnetic for magnetic memory device, comprising:
Free layer, is arranged essentially parallel to plane, and has the first magnetic moment that can change when write current flows through described magnetic knot between a plurality of stable magnetic state, and described the first magnetic moment has the first nonzero component that is substantially perpendicular to this plane;
Symmetry filtrator;
Nailed layer, be arranged essentially parallel to this plane, and there is the second magnetic moment being pinned on specific direction, described symmetry filter bits is between described nailed layer and described free layer, described the second magnetic moment has the second nonzero component that is substantially perpendicular to this plane, at least one in described free layer and described nailed layer has the first symmetric electric charge carrier at Fermi energy place in the spin of son more than first passage, in first few son spin passage, there is no described the first symmetric electric charge carrier, described symmetry filtrator transmission has described the first symmetric electric charge carrier, and prevention has the second symmetric electric charge carrier different from described the first symmetry, at least one in described symmetry filtrator and described free layer and described nailed layer has the lattice mismatch that is less than 7 percent.
22. 1 kinds of knots of the magnetic for magnetic memory device, comprising:
Free layer, be arranged essentially parallel to plane, and at write current, there is the first magnetic moment that can change during by described magnetic knot between a plurality of stable magnetic state, described the first magnetic moment has the first nonzero component that is substantially perpendicular to this plane, described free layer has the first symmetric electric charge carrier at Fermi energy place in the spin of son more than first passage, and there is no described the first symmetric electric charge carrier in first few son spin passage;
Symmetry filtrator, transmission has described the first symmetric electric charge carrier, and prevention has the second symmetric electric charge carrier different from described the first symmetry;
Nailed layer, be arranged essentially parallel to this plane and there is the second magnetic moment being pinned on specific direction, described the second magnetic moment has the second nonzero component that is substantially perpendicular to this plane, described nailed layer has described the first symmetric electric charge carrier at Fermi energy place in the spin of son more than second passage, and there is no described the first symmetric electric charge carrier in second few son spin passage, described symmetry filter bits is between described free layer and described nailed layer, at least one in described symmetry filtrator and described free layer and described nailed layer has the lattice mismatch that is less than 7 percent.
23. 1 kinds for providing the method for the magnetic knot using at magnetic memory device, comprising:
Provide magnetic knot stacking, this magnetic is tied the stacking free tunic that comprises, pinned tunic and symmetry filter film, described symmetry filter film transmission has the first symmetric electric charge carrier and prevention has the second symmetric electric charge carrier, described symmetry filter layer is between described free tunic and described pinned tunic, at least one in described free tunic and described pinned tunic has the first symmetric electric charge carrier at Fermi level place in spin passage, and in another spin passage not at the described first symmetric electric charge carrier at Fermi level place, be located substantially in plane, and there is the non-zero magnetic moment component that is substantially perpendicular to this plane, at least one in described symmetry filtrator and described free layer and described nailed layer has the lattice mismatch that is less than 7 percent,
Limiting described magnetic knot makes described magnetic knot comprise the free layer being limited by described free tunic, the spin filtering device being limited by described spin filtering device layer and the nailed layer being limited by described pinned tunic, described free layer has the first magnetic moment, and described nailed layer has the second magnetic moment;
Set described second magnetic moment of described nailed layer for being pinned in specific direction;
Wherein said magnetic texure is made as flowing through when write current when described magnetic is tied and is allowed described the first magnetic moment between a plurality of stable magnetic state, to change.
24. methods as claimed in claim 23, wherein said lattice mismatch is less than 4 percent.
25. methods as claimed in claim 20, at least one of wherein said free tunic and described pinned tunic is located substantially in plane, and comprises the AlMn with (001) axle that is substantially perpendicular to this plane.
26. methods as claimed in claim 20, wherein said symmetry filtrator comprises at least one in Ge, GaAs and ZnSe.
27. methods as claimed in claim 19, wherein provide described magnetic to tie stacking step and also comprise:
Deposition interval tunic; And
Deposition is for the other pinned tunic of other nailed layer, and this wall is between described other pinned tunic and described free tunic, and described other nailed layer has the 3rd magnetic moment.
CN201310302503.XA 2012-07-13 2013-07-15 Method and system for providing the magnetic tunnel-junction that can be used in magnetic memory Active CN103544985B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/549,331 2012-07-13
US13/549,331 US9130151B2 (en) 2010-01-11 2012-07-13 Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories

Publications (2)

Publication Number Publication Date
CN103544985A true CN103544985A (en) 2014-01-29
CN103544985B CN103544985B (en) 2017-08-01

Family

ID=49968369

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310302503.XA Active CN103544985B (en) 2012-07-13 2013-07-15 Method and system for providing the magnetic tunnel-junction that can be used in magnetic memory

Country Status (3)

Country Link
JP (1) JP6339327B2 (en)
KR (1) KR102042769B1 (en)
CN (1) CN103544985B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108028313A (en) * 2015-09-25 2018-05-11 英特尔公司 PSTTM device with multi-layer filter stack

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1716616A (en) * 2004-07-01 2006-01-04 王知行 Nonvolatile memory unit and its array
US20080026253A1 (en) * 2006-07-27 2008-01-31 National Institute Of Advanced Industrial Science And Technology Cpp type giant magneto-resistance element and magnetic sensor
US20080246104A1 (en) * 2007-02-12 2008-10-09 Yadav Technology High Capacity Low Cost Multi-State Magnetic Memory
CN101546807A (en) * 2008-03-27 2009-09-30 株式会社东芝 Magnetoresistive element and magnetic memory
US7826258B2 (en) * 2008-03-24 2010-11-02 Carnegie Mellon University Crossbar diode-switched magnetoresistive random access memory system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008028362A (en) * 2006-06-22 2008-02-07 Toshiba Corp Magnetoresistive element and magnetic memory
JP2008252018A (en) * 2007-03-30 2008-10-16 Toshiba Corp Magnetoresistance effect element, and magnetic random access memory using the same
JP5491757B2 (en) * 2009-03-27 2014-05-14 株式会社東芝 Magnetoresistive element and magnetic memory

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1716616A (en) * 2004-07-01 2006-01-04 王知行 Nonvolatile memory unit and its array
US20080026253A1 (en) * 2006-07-27 2008-01-31 National Institute Of Advanced Industrial Science And Technology Cpp type giant magneto-resistance element and magnetic sensor
US20080246104A1 (en) * 2007-02-12 2008-10-09 Yadav Technology High Capacity Low Cost Multi-State Magnetic Memory
US7826258B2 (en) * 2008-03-24 2010-11-02 Carnegie Mellon University Crossbar diode-switched magnetoresistive random access memory system
CN101546807A (en) * 2008-03-27 2009-09-30 株式会社东芝 Magnetoresistive element and magnetic memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108028313A (en) * 2015-09-25 2018-05-11 英特尔公司 PSTTM device with multi-layer filter stack
CN108028313B (en) * 2015-09-25 2022-04-15 英特尔公司 PSTTM device with multi-layer filter stack

Also Published As

Publication number Publication date
KR20140009071A (en) 2014-01-22
JP2014022735A (en) 2014-02-03
KR102042769B1 (en) 2019-11-08
CN103544985B (en) 2017-08-01
JP6339327B2 (en) 2018-06-06

Similar Documents

Publication Publication Date Title
US8254162B2 (en) Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories
CN103887424B (en) Magnetic junction and its offer method and magnetic memory
KR101893908B1 (en) Method and system for providing hybrid magnetic tunneling junction elements with improved switching
US7486551B1 (en) Method and system for providing domain wall assisted switching of magnetic elements and magnetic memories using such magnetic elements
CN102804279B (en) For providing the method and system of oppositely two magnetic tunnel junction element
KR102223189B1 (en) Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions
US8446761B2 (en) Method and system for providing multiple logic cells in a single stack
US8698259B2 (en) Method and system for providing a magnetic tunneling junction using thermally assisted switching
Zabel Progress in spintronics
US8766383B2 (en) Method and system for providing a magnetic junction using half metallic ferromagnets
US7369427B2 (en) Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
US8422285B2 (en) Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
CN102544353B (en) Magnetic junction, magnetic memory and its method
US20050185455A1 (en) Perpendicular magnetization magnetic element utilizing spin transfer
KR20160004905A (en) Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memories
CN103299370B (en) Bipolarity spin transfer switches
CN108010549A (en) A kind of spin polarized current generator and its magnetic devices
WO2012021297A1 (en) Magnetic tunneling junction elements having a biaxial anisotropy
TWI624088B (en) Method and system for providing magnetic tunneling junction elements having an easy cone anisotropy
CN103178205A (en) Method for providing magnetic junctions and magnetic storage comprising the magnetic junctions
TWI643367B (en) Material composition for foming free layer of magnetic device, free layer and magnetic element
CN103544985A (en) Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories
US9130151B2 (en) Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant