CN103529888A - Voltage stabilizer for medium-high frequency interface of electronic label - Google Patents
Voltage stabilizer for medium-high frequency interface of electronic label Download PDFInfo
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- CN103529888A CN103529888A CN201210225633.3A CN201210225633A CN103529888A CN 103529888 A CN103529888 A CN 103529888A CN 201210225633 A CN201210225633 A CN 201210225633A CN 103529888 A CN103529888 A CN 103529888A
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- nmos pipe
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Abstract
The invention discloses a voltage stabilizer for a medium-high frequency interface of an electronic label. The voltage stabilizer comprises a first resistor, a first PMOS tube and a first NMOS tube, wherein the two ends of the first resistor are respectively connected with the first PMOS tube source electrode and the first NMOS tube drain electrode, the first NMOS tube source electrode is connected with the ground, the first PMOS tube is an MOS tube including a diode for connection, and the first NMOS tube grid is connected with the first PMOS tube drain electrode. A direct-current voltage input line is connected to the line between the first NMOS tube drain electrode and the first resistor, and a direct-current voltage output line is connected to the line between the first PMOS tube source electrode and the first resistor. By means of the structure, the voltage stabilizer is simple in whole structure and convenient to achieve. When being used, the voltage stabilizer can prevent bleed-off voltage from hopping through the action of the first PMOS tube and the first NMOS tube to further avoid demodulation failure.
Description
Technical field
The present invention relates to radio-frequency technique field, specifically for the voltage stabilizer of electronic tag medium-high frequency interface.
Background technology
Along with the fast development of electronic technology and improving constantly of manufacture level, the REID development that adopts radio to realize is swift and violent, radio frequency recognizing electronic label is as a kind of non-contact IC card, it,, by radiotelegraphy and the combination of IC technology, is automatically identified destination object and is obtained related data by radiofrequency signal.In radio-frequency recognition system, the high frequency interface of electronic tag forms the high-frequency transmission path from reader to electronic tag, and high frequency interface is Absorption Current from its antenna, and using after the current commutates voltage stabilizing absorbing in electronic tag the power supply of chip.In high frequency interface, be provided with voltage stabilizer, voltage stabilizer is mainly used in preventing the direct supply overtension after rectification, and too high DC voltage is released, existing voltage stabilizer is by supply voltage and certain normal voltage are compared, and then obtain the voltage that need release, the discharge voltage obtaining like this has the process of a unexpected saltus step of voltage, make the change amount of leakage current before and after saltus step larger, this depth of modulation that may make to receive signal is very little in certain section of field strength range, and then can cause demodulation failure.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide when input direct voltage is too high, voltage is released and can be avoided discharge voltage to occur the voltage stabilizer for electronic tag medium-high frequency interface of saltus step.
Object of the present invention is achieved through the following technical solutions: for the voltage stabilizer of electronic tag medium-high frequency interface, comprise the first resistance, a PMOS pipe and NMOS pipe, described the first resistance two ends are connected with a NMOS pipe drain electrode with a PMOS pipe source electrode respectively, the source ground of the one NMOS pipe, the metal-oxide-semiconductor that a described PMOS pipe connects for diode, a NMOS tube grid is connected with a PMOS pipe drain electrode; On circuit between a described NMOS pipe drain electrode and the first resistance, be connected with DC voltage input line, on the circuit between a described PMOS pipe source electrode and the first resistance, be connected with direct voltage output line.The metal-oxide-semiconductor that in the present invention, diode connects is that the grid of metal-oxide-semiconductor and drain electrode are linked together, because metal-oxide-semiconductor exists leakage current under certain voltage, so the metal-oxide-semiconductor that in the present invention, diode connects is used for simulating the resistance that resistance is very large, and can realize the control to resistance by adjusting the parameter of metal-oxide-semiconductor.DC voltage input line in the present invention receives the DC voltage after the rectification of high frequency interface, and direct voltage output line is by the direct voltage output after voltage stabilizing.
Voltage stabilizer for electronic tag medium-high frequency interface, also comprise the 2nd NMOS pipe, the 3rd NMOS pipe and the 4th NMOS pipe, described the 2nd NMOS pipe, the 3rd NMOS pipe and the 4th NMOS pipe three's grid is all connected on one end of the first resistance connection the one NMOS pipe drain electrode, connection between described the 2nd NMOS pipe drain electrode and a NMOS tube grid and the drain electrode of PMOS pipe, the source electrode of the 3rd NMOS pipe is connected with the 2nd NMOS pipe source electrode with the 4th NMOS pipe drain electrode respectively with drain electrode, the 4th NMOS pipe source ground.The circuit that in the present invention, the 2nd NMOS pipe, the 3rd NMOS pipe and the 4th NMOS pipe connect forms current foldback circuit.
On described direct voltage output line, be connected with the first electric capacity, the other end that described the first electric capacity connects direct voltage output line end is relatively connected with a NMOS pipe source electrode.The present invention carries out filtering by the first resistance and the first electric capacity to the DC voltage of input, filtering HFS wherein, thus make the DC voltage of output more steady, the first electric capacity can receive the electric current of releasing.
Compared with prior art, the present invention has following beneficial effect: the present invention includes the first resistance, a PMOS pipe and NMOS pipe, the present invention releases to DC voltage by a NMOS pipe when output dc voltage is too high, thereby reach the object that reduces voltage, under the effect of a PMOS pipe, the voltage of inputting a NMOS tube grid is steady, in the time of avoiding discharge voltage there is saltus step in voltage, and then can avoid because leakage current is in larger the caused demodulation failure of the change amount before and after saltus step.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention.
In accompanying drawing, the corresponding name of Reference numeral is called: R1-the first resistance, P1-one PMOS pipe, N1-one NMOS pipe, N2-two NMOS pipe, N3-three NMOS pipe, N4-four NMOS pipe, 1-DC voltage input line, 2-direct voltage output line.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are not limited to this.
Embodiment:
As shown in Figure 1, voltage stabilizer for electronic tag medium-high frequency interface, comprise the first resistance R 1, the first capacitor C 1 and five metal-oxide-semiconductors, wherein, five metal-oxide-semiconductors comprise a PMOS pipe and four NMOS pipe, a PMOS pipe is a PMOS pipe P1, and four NMOS pipe is respectively a NMOS pipe N1, the 2nd NMOS pipe N2, the 3rd NMOS pipe N3 and the 4th NMOS pipe N4.The one PMOS pipe P1 is the metal-oxide-semiconductor that diode connects, and the grid that is specially a PMOS pipe P1 is connected with its source electrode.The first resistance R 1 two ends are connected with a NMOS pipe N1 drain electrode with a PMOS pipe P1 source electrode respectively, the source ground of a NMOS pipe N1, and a NMOS pipe N1 grid is connected with a PMOS pipe P1 drain electrode.On circuit between the one NMOS pipe N1 drain electrode and the first resistance R 1, be connected with on the circuit between DC voltage input line 1, the one PMOS pipe P1 source electrode and the first resistance R 1 and be connected with direct voltage output line 2.
The 2nd NMOS pipe N2, the 3rd NMOS pipe N3 and the 4th NMOS pipe N4 three's grid is all connected on one end of the first resistance R 1 connection the one NMOS pipe N1 drain electrode, connection between the 2nd NMOS pipe N2 drain electrode and NMOS pipe N1 grid and PMOS pipe N1 drain electrode, the source electrode of the 3rd NMOS pipe N3 is connected with the 2nd NMOS pipe N2 source electrode with the 4th NMOS pipe N4 drain electrode respectively with drain electrode, the 4th NMOS pipe N4 source ground.The other end that the first capacitor C 1 connects direct voltage output line 2 ends is relatively connected with a NMOS pipe N1 source electrode.
As mentioned above, can well realize the present invention.
Claims (3)
1. for the voltage stabilizer of electronic tag medium-high frequency interface, it is characterized in that: comprise the first resistance (R1), a PMOS pipe (P1) and NMOS pipe (N1), described the first resistance (R1) two ends are managed (N1) drain electrode with PMOS pipe (P1) source electrode with a NMOS respectively and are connected, the source ground of the one NMOS pipe (N1), the metal-oxide-semiconductor that a described PMOS pipe (P1) connects for diode, NMOS pipe (N1) grid is managed (P1) drain electrode with a PMOS and is connected; On circuit between described NMOS pipe (N1) drain electrode and the first resistance (R1), be connected with DC voltage input line (1), on the circuit between described PMOS pipe (P1) source electrode and the first resistance (R1), be connected with direct voltage output line (2).
2. the voltage stabilizer for electronic tag medium-high frequency interface according to claim 1, it is characterized in that: also comprise the 2nd NMOS pipe (N2), the 3rd NMOS pipe (N3) and the 4th NMOS pipe (N4), described the 2nd NMOS pipe (N2), the 3rd NMOS pipe (N3) and the 4th NMOS pipe (N4) three's grid is all connected on one end that the first resistance (R1) connects NMOS pipe (N1) drain electrode, connection between described the 2nd NMOS pipe (N2) drain electrode and NMOS pipe (N1) grid and PMOS pipe (N1) drain electrode, the source electrode of the 3rd NMOS pipe (N3) is connected with the 2nd NMOS pipe (N2) source electrode with the 4th NMOS pipe (N4) drain electrode respectively with drain electrode, the 4th NMOS pipe (N4) source ground.
3. the voltage stabilizer for electronic tag medium-high frequency interface according to claim 1 and 2, it is characterized in that: on described direct voltage output line (2), be connected with the first electric capacity (C1), the other end that described the first electric capacity (C1) connects direct voltage output line (2) end is relatively managed (N1) source electrode with a NMOS and is connected.
Priority Applications (1)
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CN201210225633.3A CN103529888A (en) | 2012-07-03 | 2012-07-03 | Voltage stabilizer for medium-high frequency interface of electronic label |
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CN201210225633.3A CN103529888A (en) | 2012-07-03 | 2012-07-03 | Voltage stabilizer for medium-high frequency interface of electronic label |
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CN103529888A true CN103529888A (en) | 2014-01-22 |
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CN201210225633.3A Pending CN103529888A (en) | 2012-07-03 | 2012-07-03 | Voltage stabilizer for medium-high frequency interface of electronic label |
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CN1268719A (en) * | 1999-03-31 | 2000-10-04 | 三菱电机株式会社 | Protruding and concave detecting sensor, finger print contrust device and personal recognising device |
EP1873688A2 (en) * | 2006-06-30 | 2008-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
CN101281614A (en) * | 2008-04-14 | 2008-10-08 | 北京大学深圳研究生院 | Demodulation circuit for ultrahigh frequency radio frequency recognizing chip |
CN101634868A (en) * | 2008-07-23 | 2010-01-27 | 三星电子株式会社 | Low dropout voltage stabilizer |
CN102456154A (en) * | 2010-11-03 | 2012-05-16 | 上海华虹Nec电子有限公司 | Power supply generation circuit of radio-frequency electronic tag |
CN202632346U (en) * | 2012-07-03 | 2012-12-26 | 成都市宏山科技有限公司 | Voltage stabilizer for medium-high frequency interface in electronic tag |
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2012
- 2012-07-03 CN CN201210225633.3A patent/CN103529888A/en active Pending
Patent Citations (6)
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CN1268719A (en) * | 1999-03-31 | 2000-10-04 | 三菱电机株式会社 | Protruding and concave detecting sensor, finger print contrust device and personal recognising device |
EP1873688A2 (en) * | 2006-06-30 | 2008-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
CN101281614A (en) * | 2008-04-14 | 2008-10-08 | 北京大学深圳研究生院 | Demodulation circuit for ultrahigh frequency radio frequency recognizing chip |
CN101634868A (en) * | 2008-07-23 | 2010-01-27 | 三星电子株式会社 | Low dropout voltage stabilizer |
CN102456154A (en) * | 2010-11-03 | 2012-05-16 | 上海华虹Nec电子有限公司 | Power supply generation circuit of radio-frequency electronic tag |
CN202632346U (en) * | 2012-07-03 | 2012-12-26 | 成都市宏山科技有限公司 | Voltage stabilizer for medium-high frequency interface in electronic tag |
Non-Patent Citations (2)
Title |
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沈红伟等: "基于EPC Class0协议无源电子标签射频前端设计", 《固体电子学研究与进展》, vol. 28, no. 1, 31 March 2008 (2008-03-31), pages 68 * |
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Application publication date: 20140122 |