CN103529374B - Simple controlled silicon detection board - Google Patents
Simple controlled silicon detection board Download PDFInfo
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- CN103529374B CN103529374B CN201310520740.3A CN201310520740A CN103529374B CN 103529374 B CN103529374 B CN 103529374B CN 201310520740 A CN201310520740 A CN 201310520740A CN 103529374 B CN103529374 B CN 103529374B
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Abstract
The application relates to the technical field of controlled silicon detection, in particular to a simple controlled silicon detection board. The simple controlled silicon detection board comprises a detection module and an access control module, wherein the detection module comprises a meter M and a power supply E1 connected in series with the meter; the access control module comprises an inverter circuit, and a terminal A, a terminal B and a terminal C which are used for connecting pins of controlled silicon to be detected respectively; the inverter circuit comprises a constant positive output end and a constant negative output end; a switch branch is connected in series between the terminal B and the constant positive output end of the inverter circuit; two output ends of the detection module are correspondingly connected with two input ends of the inverter circuit; the constant positive output end of the inverter circuit is connected with the terminal A; the constant negative output end of the inverter circuit is connected with the terminal C. The simple controlled silicon detection board can effectively detect one-way controlled silicon and two-way controlled silicon; the detection process is simple, quick, and the reliability is high.
Description
Technical field
The application is related to controllable silicon detection technique field, particularly to a kind of simple detection plate of controllable silicon.
Background technology
In electronics, the production and maintenance process of electric equipment, process needs to use this electronic component of controllable silicon, from
So also often encounter and need to detect controllable silicon（IGCT）The problem of performance quality.In prior art, detection controllable silicon is typically
Controllable silicon is detected using " transistor curve tracer ".But " graphic instrument " is expensive, and volume is heavy, and not Portable belt makes
With inconvenience, general production and maintenance occasion no this equipment.
It is known that controllable silicon is divided into one-way SCR and bidirectional triode thyristor, one-way SCR has single-phase electric conductivity, but
It with general-purpose diode be different be anode at it（A）And negative electrode（K）Between plus it is automatic after forward voltage
Conducting, will make single silicon turn on the control pole it is necessary at it（G）Plus a positive trigger pulse.Therefore, there is no " transistor
Under conditions of characteristic demonstrator ", the performance detection for one-way SCR at least must include following step：（1）, in list
To silicon controlled anode（A）And negative electrode（K）Between apply forward voltage, control pole is not added with trigger pulse, judges whether to end；
（2）Control pole adds trigger pulse, detects whether it turns on；（3）Trigger pulse disappears, and detects whether to continue conducting；（4）Apply anti-
To voltage, judge whether to end.The detection that one one-way SCR has to pass through above four steps could judge its performance
Quality.For bidirectional triode thyristor, its key property and one-way SCR type, only it has the characteristic of two-way admittance, that is,
There is no dividing of both positive and negative polarity, therefore its detecting step also needs to repeat step in addition to four above steps（2）Extremely（4）One time.
It can be seen that, various for silicon controlled detection process step.
And in the prior art, without " transistor curve tracer ", tester's intelligence can only detect manually, it is necessary
Controllable silicon to be detected is connected to both ends of power, detects whether to turn on test table, then apply a pulse with power supply again,
Then detect whether again to turn on, also need to afterwards step, whole process after controllable silicon to be measured and reverse power connection, will be detected etc. again
Extremely loaded down with trivial details, detection efficiency is low, and detection process easily malfunctions.
Content of the invention
The purpose of the application is to avoid above-mentioned weak point of the prior art and provides a kind of structure simply, can be fast
Speed detects whether single-phase silicon-controlled or bidirectional triode thyristor performance is normal, and the controllable silicon being easy to produce and maintenance process uses is simple
Detection plate.
The purpose of the application is achieved through the following technical solutions：
Provide a kind of simple detection plate of controllable silicon, including detection module and path control module, described detection module bag
Include gauge outfit M and the power supply E1 connecting with gauge outfit, described path control module includes reverse circuit, is used for just connecting controllable silicon to be measured
The A terminal of pole, for connecting the B terminal of controlled silicium cathode to be measured and for connecting the C terminal of SCR control pole to be measured, described
Reverse circuit includes normal positive output end and normal negative output terminal, normal positive output end and normal negative output described in described reverse circuit interchangeable
The polarity at end, described B terminal connects through switching branches to the normal positive output end of reverse circuit, and the two of described detection module
Individual output end correspondence is connected with two inputs of reverse circuit, and the normal positive output end of described reverse circuit and A terminal connect, institute
State the normal negative output terminal of reverse circuit and C terminal connects.
Wherein, described reverse circuit includes negative electricity input and positive electrical input, described negative electricity input and normal positive output
It is serially connected with double control switch K2 between end, between described positive electrical input and normal negative output terminal, be serially connected with double control switch K3, described negative
Electrical input is connected with normal negative output terminal, and described positive electrical input is connected with the first output end.
Wherein, described path control module also includes power supply complementary module, and it is auxiliary that described power supply complementary module can be shorted
Help power supply E2, accessory power supply E2 is controlled to be connected with power supply E1.
Wherein, an input of described reverse circuit is provided with D binding post, and another input is provided with E wiring
Terminal, makes described detection module and the detachable connection of path control module by D binding post and E binding post.
Wherein, described switching branches include the button switch K 1 being serially connected between A terminal and B terminal.
Wherein, described detection module is ohmmeter.
The beneficial effect of the application：The present invention provides a kind of simple detection plate of controllable silicon, by silicon controlled to be measured during detection
Anode, control pole and negative electrode are inserted in A terminal in this detection plate, B terminal and C terminal successively, due to no turning in reverse circuit
Turn reverse circuit normal positive output end output high level in the case of controlling, normal negative output terminal exports low level, therefore enables
Controllable silicon two ends to be measured increase alive purpose, pass through the on/off of controlling switch branch road simultaneously, can control controllable silicon control to be measured
On/off between pole processed and high level, thus realize easily SCR control pole is applied with the purpose of direct impulse；Enter one
Step, realizes electrode upset by controlling reverse circuit, you can realize applying backward voltage between controllable silicon anode and negative electrode
It is seen then that can easily be detected to controllable silicon by this detection plate, detection process becomes extremely succinctly reliable to purpose.This
Outward, then need not consider both positive and negative polarity problem for bidirectional triode thyristor, and this detection plate equally can provide pulse applying, electrode upset
Etc. function, equally can easily be detected.
Brief description
Using accompanying drawing, the application is described further, but the embodiment in accompanying drawing does not constitute any limit to the application
System, for those of ordinary skill in the art, on the premise of not paying creative work, can also obtain according to the following drawings
Other accompanying drawings.
Fig. 1 is a kind of electrical block diagram of the simple detection plate of controllable silicon of the application.
Specific embodiment
With the following Examples the application is further described.
A kind of specific embodiment of the simple detection plate of controllable silicon of the application, as shown in figure 1, include：Detection module 1 and logical
Road control module 2, described detection module 1 includes gauge outfit M, 1.5V power supply E1 and the resistance R0 contacting.
Path control module 2 includes reverse circuit 21, for connecting A terminal, B terminal and the C-terminal of controllable silicon pin to be measured
Son, the D terminal for connection detection module 1 and E terminal.
Reverse circuit 21 includes negative electricity input 211, positive electrical input 212, normal positive output end 213 and normal negative output terminal
214.Described negative electricity input 211 is connected with normal negative output terminal 214, and described positive electrical input 212 is with normal positive output end 213 even
Connect, be serially connected with double control switch K2 between described negative electricity input 211 and normal positive output end 213, described positive electrical input 212 is with often
It is serially connected with double control switch K3 between negative output terminal 214.
In the present embodiment, the normally-closed contact of double control switch K2 connects negative electricity input 211, the normally opened contact of double control switch K2
Connect normal positive output end 213, the normally-closed contact of double control switch K3 connects positive electrical input 212, the normally opened contact of double control switch K3
Connect normal negative output terminal 214, certainly specific method of attachment can be adjusted flexibly, such as by the company of normally-closed contact and normally opened contact
Connect end and swap and also can achieve, as long as be capable of electrode in a word overturning.Double control switch K2 and dual control in the present embodiment
Switch K3 is the button switch of linkage, and certain basis is specific to be needed to switch using other types.
In the present embodiment, normal positive output end 213 and A terminal connect, and normal negative output terminal 214 and C terminal connect, and negative electricity inputs
End 211 and D terminal connects, and positive electrical input 212 and E terminal connect.It is connected with switching branches, this is opened between A terminal and B terminal
The button switch K 1 that pass route is in normally open is constituted.
During use, by the cathode output end 11 of detection module 1（Both positive and negative polarity according to power supply E1 determines）It is plugged to E terminal,
The cathode output end 12 of detection module 1 is plugged into D terminal.
For one-way SCR Q1（Hereinafter referred to as single silicon）,（1）Three electrode A by single silicon Q1 to be measured（Anode）、G（Control
Pole processed）、K（Negative electrode）It is coupled with A terminal, B terminal and C terminal, now single silicon Q1 two ends have been applied in forward voltage, if table
Head M no indicates, shows that single silicon Q1 does not turn under the conditions of the no positive trigger voltage of only forward voltage, can carry out next step；
（2）When pressing switch K1, B terminal obtains high level, and the G pole of single silicon Q1 is applied in positive trigger voltage, if gauge outfit has instruction,
Show there is being forward voltage and can turn under the conditions of having positive trigger voltage, next step can be carried out；（3）Decontrol switch K1, single
The positive trigger voltage that the G of silicon Q1 extremely goes up disappears, if gauge outfit instruction is constant, shows what single silicon Q1 disappeared in positive trigger voltage
Under the conditions of can continue to turn on, next step can be carried out；（4）Press switch K2 and switch K3, A terminal is changed into low electricity from high level
Flat, C terminal is changed into high level from low level, and the A pole of single silicon Q1 and K interpolar are coupled with backward voltage, if now gauge outfit instruction
It is reduced to zero, show that single silicon Q1 can smoothly be changed into blocking from conducting after being applied in backward voltage, tested single silicon Q1 performance is normal；
If failing to smoothly complete above step, instruction sheet silicon Q1 property abnormality.
For bidirectional triode thyristor（Hereinafter referred to as double silicon）, its general principle is consistent with one-way SCR, and only it does not have
There are A pole and K pole, only there is T2 pole, G pole and T1 pole, wherein G pole is all control pole, no positive and negative the dividing, during detection in T2 pole and T1 pole
The G pole of to be measured couple of silicon Q2 can be plugged into B terminal, T2 pole and T1 pole are plugged into A terminal and C terminal, afterwards successively according to more than
Step execute, after the completion of repeat（2）Extremely（4）?.Will not be described here.
In summary, this detection plate can effectively detect to one-way SCR and bidirectional triode thyristor, detection process
Simple and fast, reliability is high.Further, since this detection plate provides a standardized detection process, and detection process need not
Controllable silicon was done with multioperation, self-reacting device therefore can also be coordinated in process of production to realize Aulomatizeted Detect, tester
Only need part by controllable silicon to be measured plug with respective terminal on, by equipment automatically according to program control switch K1, switch K2 and
Switch K3 simultaneously detects that the display situation of gauge outfit can automatically derive testing result, can effectively improve detection efficiency.
Further, path control module 2 also includes power supply complementary module 22, and described power supply complementary module 22 includes connecting
Double control switch K4 in the negative electricity input 211 of reverse circuit 21（It is also connected to positive electrical input 212）, described double control switch
Between the normally opened contact of K4 and normally-closed contact, bridging has accessory power supply E2, described accessory power supply E2 controlled switch K4 to control and power supply
E1 connects.Whole detection process the power supply E1 of direct detection module 1 can improve power supply under normal conditions, but for some
During high-power silicon controlled rectifier, double control switch K4 can be pressed, now accessory power supply E2 is connected serially on power supply E1, thus obtaining larger
The power supply of voltage is to detect high-power silicon controlled rectifier.
Observe and understand, in this detection plate, detection module 1 circuit is consistent with the circuit of existing ohmmeter, therefore in reality
Border directly two test pencils of ohmmeter can be directly plugged into D terminal during using and enterprising enforcement of E terminal is used.For this reason,
In the present embodiment, detection module 1 and path control module 2 adopt detachably connectable design, certainly according to specific needs
Both directly can be integrated on same circuit board.
Finally it should be noted that above example is only in order to illustrating the technical scheme of the application, rather than the application is protected
The restriction of shield scope, although having made to explain to the application with reference to preferred embodiment, those of ordinary skill in the art should
Work as understanding, the technical scheme of the application can be modified or equivalent, without deviating from the reality of technical scheme
Matter and scope.
Claims (5)
1. a kind of simple detection plate of controllable silicon is it is characterised in that include detection module and path control module, described detection module
The power supply E1 connect including gauge outfit M and with gauge outfit, described path control module includes reverse circuit, is used for connecting controllable silicon to be measured
The A terminal of positive pole, for connecting the C terminal of controlled silicium cathode to be measured and for connecting the B terminal of SCR control pole to be measured, institute
State reverse circuit and include normal positive output end and normal negative output terminal, normal positive output end described in described reverse circuit interchangeable and often bear defeated
Go out the polarity at end, described B terminal connects through switching branches to the normal positive output end of reverse circuit, described detection module
Two output end correspondences are connected with two inputs of reverse circuit, and the normal positive output end of described reverse circuit and A terminal connect,
The normal negative output terminal of described reverse circuit and C terminal connect, and described reverse circuit includes negative electricity input and positive electrical input, institute
State and between negative electricity input and normal positive output end, be serially connected with double control switch K2, go here and there between described positive electrical input and normal negative output terminal
It is connected to double control switch K3, described negative electricity input is connected with normal negative output terminal, and described positive electrical input is connected with normal positive output end.
2. as claimed in claim 1 a kind of simple detection plate of controllable silicon it is characterised in that described path control module also includes
Power supply complementary module, described power supply complementary module includes the accessory power supply E2 that can be shorted, accessory power supply E2 controlled with power supply E1
Series connection.
3. as claimed in claim 1 a kind of simple detection plate of controllable silicon it is characterised in that one of described reverse circuit input
End is provided with D binding post, and another input is provided with E binding post, makes institute by D binding post and E binding post
State detection module and the detachable connection of path control module.
4. as claimed in claim 1 a kind of simple detection plate of controllable silicon it is characterised in that described switching branches include being serially connected with
Button switch K 1 between A terminal and B terminal.
5. as claimed in claim 1 a kind of simple detection plate of controllable silicon it is characterised in that described detection module be ohmmeter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310520740.3A CN103529374B (en) | 2013-10-29 | 2013-10-29 | Simple controlled silicon detection board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310520740.3A CN103529374B (en) | 2013-10-29 | 2013-10-29 | Simple controlled silicon detection board |
Publications (2)
| Publication Number | Publication Date |
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| CN103529374A CN103529374A (en) | 2014-01-22 |
| CN103529374B true CN103529374B (en) | 2017-02-15 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107238787A (en) * | 2017-05-16 | 2017-10-10 | 浦北县富通电子科技有限公司 | The Incoming Quality Control method of semiconductor |
| CN110441668A (en) * | 2019-08-19 | 2019-11-12 | 西安易恩电气科技有限公司 | A kind of high-power IGBT test macro |
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|---|---|---|---|---|
| US4633241A (en) * | 1984-11-20 | 1986-12-30 | General Electric Company | Method of automated in-place SCR testing |
| CN203117379U (en) * | 2013-02-25 | 2013-08-07 | 翁策高 | Silicon controlled rectifier (SCR) detection device |
| CN203630297U (en) * | 2013-10-29 | 2014-06-04 | 东莞市大忠电子有限公司 | Simple silicon controlled rectifier detection board |
-
2013
- 2013-10-29 CN CN201310520740.3A patent/CN103529374B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4633241A (en) * | 1984-11-20 | 1986-12-30 | General Electric Company | Method of automated in-place SCR testing |
| CN203117379U (en) * | 2013-02-25 | 2013-08-07 | 翁策高 | Silicon controlled rectifier (SCR) detection device |
| CN203630297U (en) * | 2013-10-29 | 2014-06-04 | 东莞市大忠电子有限公司 | Simple silicon controlled rectifier detection board |
Non-Patent Citations (2)
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| 一款简单实用的双向可控硅测试电路;佚名;《http://www.gzweix.com/article/sort0250/sort0289/sort0292/info-245673.html》;20111123;参见第1段-最后一段及图4 * |
| 双向可控硅测试指南;编辑;《http://www.wuyazi.com/dlt/jcdl/kkgdl/201204/15337.html》;20120417;全文 * |
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