CN103515179B - Plasma-reaction-chamber and there is its plasma device - Google Patents
Plasma-reaction-chamber and there is its plasma device Download PDFInfo
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- CN103515179B CN103515179B CN201210220530.8A CN201210220530A CN103515179B CN 103515179 B CN103515179 B CN 103515179B CN 201210220530 A CN201210220530 A CN 201210220530A CN 103515179 B CN103515179 B CN 103515179B
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Abstract
The invention discloses a kind of plasma-reaction-chamber.Described plasma-reaction-chamber comprises: cavity, has chamber in described cavity; Electrostatic chuck, described electrostatic chuck is located in described cavity for carrier substrate; Heater, described heater is located on described cavity for heating described cavity; And medium window, described medium window is located at the upper end of described cavity for closing the open top of described chamber, is provided with heating fluid channel in described medium window.According to the plasma-reaction-chamber of the embodiment of the present invention, by arranging heating fluid channel and passing into heating fluid and medium window carries out exchange heat in passage, thus realize to medium window quick, evenly heat up, substantially increase etching efficiency and the etching effect of plasma-reaction-chamber.The invention also discloses a kind of plasma device.
Description
Technical field
The present invention relates to semiconductor equipment manufacturing technology field, especially relate to a kind of plasma-reaction-chamber and there is its plasma device.
Background technology
Plasma device is widely used in the manufacturing process of integrated circuit (IC) or MEMS.One of them significant purposes is exactly inductively coupled plasma (InductiveCoupledPlasma, ICP) device.Atom containing a large amount of electronics, ion, excitation state in plasma, molecule and free radical isoreactivity particle, these active particles and substrate interact and make material surface generation physical and chemical reaction, thus change the performance of material surface.
In etching process, strictly must control the temperature of plasma-reaction-chamber, because the temperature fluctuation in etching technics effect plasma reative cell is extremely sensitive, the direct uniformity affecting etch rate, and the temperature in control reative cell is in the particle deposition that suitable scope can also reduce reative cell sidewall, impel volatile residue to discharge reative cell in time, effectively can extend the cycle of preventive maintenance.
Existing a kind of plasma-reaction-chamber, realize controlling the temperature of reactor chamber by arranging heater, thermocouple and excess temperature switch on sidewall, electrostatic chuck in reative cell is by temperature control modules temperature control, but the medium window being positioned at reactor top does not have independent temperature control system, and the temperature of the effect of etching technics to medium window has obvious requirement, therefore generally realize controlling the temperature of medium window by increasing plasma starter process.But, there is following shortcoming in above-mentioned plasma-reaction-chamber: the quartz window 1) playing coupling does not have independent temperature to control, the temperature of quartz window can only be obtained by the interruption heating of plasma starter, this mode of heating is very unstable, and the step of plasma starter must be added in technical process, otherwise stable process results cannot be obtained; 2) increase the step of plasma starter, the time of monolithic technology must be extended, thus greatly reduce the output capacity of whole equipment; 3) quartz window does not have independently temperature sensor, is difficult to realize automatic temperature-adjusting and controls; 4), when plasma does not have a starter, quartz window temperature will decline, and volatile residue will contact with the quartz window of low temperature and produce number of polymers and cannot discharge, and this can cause the service life reduction of quartz window.
Chinese invention patent application CN101656194A discloses a kind of plasma chamber and temperature-controlled process thereof, and the temperature realizing medium window by arranging heating tape controls.But, above-mentioned plasma chamber has two shortcomings below: 1) mode of heating is all heat to quartz window at circumferencial direction, due to the non-conductor that quartz is heat, the heating of this circumferencial direction can cause the temperature difference to the radial direction of quartz window, affect the useful life of quartz window, the more important thing is, this mode of heating wants to realize quartz window bulk temperature evenly needs long time, causes production efficiency on the low side; 2) because quartz window exists the temperature difference diametrically, so the position of the installation of TC just affects the actual temperature that rear whole quartz window is lived in temperature control, and quartz window will be subject to the bombardment of plasma and slowly thinning in technical process, so first can vacuum breaker in the position of installing thermocouple, thus greatly reduce the useful life of quartz window, increase use cost.
Summary of the invention
The present invention is intended at least to solve one of technical problem existed in prior art.
For this reason, one object of the present invention is to propose a kind of plasma-reaction-chamber, described plasma-reaction-chamber can realize medium window quick, evenly heat up.
Another object of the present invention is to propose a kind of plasma device.
The plasma-reaction-chamber of embodiment according to a first aspect of the present invention, comprising: cavity, has chamber in described cavity; Electrostatic chuck, described electrostatic chuck is located in described cavity for carrier substrate; Heater, described heater is located on described cavity for heating described cavity; And medium window, described medium window is located at the upper end of described cavity for closing the open top of described chamber, is provided with heating fluid channel in described medium window.
According to the plasma-reaction-chamber of the embodiment of the present invention, by arranging the heating fluid channel for heating fluid flowing in medium window, before plasma-reaction-chamber carries out etching technics, heating fluid can be passed into and medium window carries out exchange heat in heating fluid channel, thus make the temperature of medium window rapid, be elevated to the temperature of applicable etching technics equably, heating time before reduction technique starts, thus shorten the time of monolithic etching, improve etching efficiency, and in etching process, by controlling the flow of heating fluid, thus the control realized medium window temperature, namely the temperature maintaining medium window is in suitable scope, ensure the continuity of etching technics, the interruption of etching technics can not be caused because the temperature of medium window declines too fast, thus improve etching effect on the one hand, also improve etching efficiency on the other hand.
In one embodiment of the invention, described heating fluid channel is evenly distributed in described medium window.Thus, before plasma-reaction-chamber carries out etching technics, medium window can be heated to rapidly suitable technological temperature by heating fluid, shorten the etch period of monolithic, and the temperature of medium window can be maintained better in etching process, ensure the continuity of etching technics, thus improve etching efficiency.
Alternatively, described heating fluid channel is vortex shape.
Alternatively, multiple concentric ring shapes that it is the center of circle that described heating fluid channel is formed as with the center of described medium window.
Further alternatively, the spacing between adjacent described concentric ring is equal.
In one embodiment of the invention, described heating fluid channel import and export be located at described medium window upper surface or sidewall on.
In one embodiment of the invention, the import department of described heating fluid channel is connected with feed tube and the exit of described heating fluid channel is connected with drain pipe.Thus, facilitate heating fluid to enter and flow out medium window.
Advantageously, above described medium window, infrared temperature measurement apparatus is provided with.By adopting contactless infrared temperature measurement apparatus to carry out thermometric to medium window, substantially prolongs the useful life of medium window, thus reduce use cost.
Particularly, described medium window is quartz window.
According to the plasma-reaction-chamber of the embodiment of the present invention, can realize medium window quick, evenly heat up, thus improve etching technics etching effect and etching efficiency, simultaneously by arranging contactless infrared temperature measurement apparatus, also greatly can extend the useful life of medium window, reduce costs.
The plasma device of embodiment according to a second aspect of the present invention, comprises the plasma-reaction-chamber described in embodiment according to a first aspect of the present invention.
Additional aspect of the present invention and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present invention and advantage will become obvious and easy understand from accompanying drawing below combining to the description of embodiment, wherein:
Fig. 1 is the structural representation of the plasma-reaction-chamber according to the embodiment of the present invention; With
Fig. 2 is the structural representation of the medium window of plasma-reaction-chamber shown in Fig. 1.
Embodiment
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Be exemplary below by the embodiment be described with reference to the drawings, be intended to for explaining the present invention, and can not limitation of the present invention be interpreted as.
In describing the invention, it will be appreciated that, term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ", " thickness ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " clockwise ", orientation or the position relationship of the instruction such as " counterclockwise " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, instead of indicate or imply that the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore limitation of the present invention can not be interpreted as.
In addition, term " first ", " second " only for describing object, and can not be interpreted as instruction or hint relative importance or imply the quantity indicating indicated technical characteristic.Thus, be limited with " first ", the feature of " second " can express or impliedly comprise one or more these features.In describing the invention, except as otherwise noted, the implication of " multiple " is two or more, unless otherwise clear and definite restriction.
In the present invention, unless otherwise clearly defined and limited, the term such as term " installation ", " being connected ", " connection ", " fixing " should be interpreted broadly, and such as, can be fixedly connected with, also can be removably connect, or connect integratedly; Can be mechanical connection, also can be electrical connection; Can be directly be connected, also indirectly can be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, above-mentioned term concrete meaning in the present invention can be understood as the case may be.
In the present invention, unless otherwise clearly defined and limited, fisrt feature second feature it " on " or D score can comprise the first and second features and directly contact, also can comprise the first and second features and not be directly contact but by the other characterisation contact between them.And, fisrt feature second feature " on ", " top " and " above " comprise fisrt feature directly over second feature and oblique upper, or only represent that fisrt feature level height is higher than second feature.Fisrt feature second feature " under ", " below " and " below " comprise fisrt feature immediately below second feature and tiltedly below, or only represent that fisrt feature level height is less than second feature.
Below with reference to Fig. 1-Fig. 2, the plasma-reaction-chamber 100 according to the embodiment of the present invention is described.
According to the plasma-reaction-chamber 100 of the embodiment of the present invention, comprise cavity 1, electrostatic chuck 2, heater 3 and medium window 4.
Have chamber 11 in cavity 1, as shown in Figure 1, the upper and lower of chamber 11 is opened wide respectively.Electrostatic chuck 2 is located at for carrier substrate 21 in cavity 1, and specifically, electrostatic chuck 2 is located at the below of chamber 11 and the bottom opening of closed chamber 11, and wherein substrate 21 is fixed on directly over electrostatic chuck 2 by electrostatic attraction.
Heater 3 is located on cavity 1 for heating cavity 1.Be appreciated that heater 3 can conventionally in arrangement be located at cavity 1 sidewall on for heating cavity 1, and by coordinating with known thermocouple temperature measuring apparatus and excess temperature switch the temperature controlling cavity 1.
As shown in Figure 2, medium window 4 is located at the upper end of cavity 1 for the open top of closed chamber 11, is provided with heating fluid channel 43 in medium window 4.Particularly, medium window 4 can be quartz window, heating fluid channel 43 is distributed with in quartz medium window, like this in the process that quartz medium window is heated, can by passing into heating fluid in heating fluid channel 43, exchange heat can be carried out with medium window 4 after heating fluid flows into heating fluid channel 43, thus make the temperature of quartz medium window quick, rise equably, after the temperature of medium window 4 is elevated to the predetermined temperature of applicable etching technics, flow by controlling heating fluid maintains the temperature of medium window 4, namely in heating fluid channel 43, the control of quartz medium window temperature is realized with the heat exchange amount of medium window 4 by controlling heating fluid, thus keep the temperature of medium window 4 to be all in whole etching process in suitable Process temperature ranges, and then improve the etching effect of etching technics in plasma-reaction-chamber 100.Wherein preferably, heating fluid can be water, and water flows in heating fluid channel 43 can not affect the coupling ability of quartz medium window.
According to the plasma-reaction-chamber 100 of the embodiment of the present invention, by arranging the heating fluid channel 43 for heating fluid flowing in medium window 4, before plasma-reaction-chamber 100 carries out etching technics, heating fluid can be passed into and medium window 4 carries out exchange heat in heating fluid channel 43, thus make the temperature of medium window 4 rapid, be elevated to the temperature of applicable etching technics equably, heating time before reduction technique starts, thus shorten the time of monolithic etching, improve etching efficiency, and in etching process, by controlling the flow of heating fluid, thus the control realized medium window 4 temperature, namely the temperature maintaining medium window 4 is in suitable scope, ensure the continuity of etching technics, the interruption of etching technics can not be caused because the temperature of medium window 4 declines too fast, thus improve etching effect on the one hand, also improve etching efficiency on the other hand.
In one embodiment of the invention, be the uniformity of the programming rate and medium window 4 temperature that improve medium window 4 further, heating fluid channel 43 can be evenly distributed in medium window 4.Such as, heating fluid channel is that vortex shape is distributed in medium window 4 (scheming not shown).Certainly, the present invention is not limited to this, in one particular embodiment of the present invention, as shown in Figure 2, multiple concentric ring shapes that it is the center of circle that heating fluid channel 43 can be formed as with the center of medium window 4, wherein alternatively, the spacing between adjacent described concentric ring is equal.Be understandable that, the arrangement form of heating fluid channel 43 can have various ways, as long as namely can realize heating up to the quick, even of medium window 4.
Thus, before plasma-reaction-chamber 100 carries out etching technics, medium window 4 can be heated to rapidly suitable technological temperature by heating fluid, shorten the etch period of monolithic, and the temperature of medium window 4 can be maintained better in etching process, ensure the continuity of etching technics, thus improve etching efficiency.
Further, in a concrete example of the present invention, as shown in Figure 1, the import of heating fluid channel 43 and outlet can be located at the upper surface of medium window 4.Certainly, import and the outlet of heating fluid channel 43 also can be located on the sidewall of medium window 4, or upper surface being located at medium window 4, another is located on the sidewall of medium window 4, its concrete set-up mode can be arranged flexibly according to practical condition, such as can arrange according to the arrangement of heating fluid channel 43 in medium window 4, thus adapt to different process situation better.Flow into from the import of heating fluid channel 43 for convenience of heating fluid and flow out from outlet, feed tube 41 can be connected with in the import department of heating fluid channel 43 and drain pipe 42 can be connected with in the exit of heating fluid channel 43.
In process medium window 4 heated by heating fluid, need to measure to the temperature of medium window 4 temperature information obtaining medium window 4 in real time, thus the convenient flow by controlling heating fluid carrys out the temperature of control medium window 4, prevents medium window 4 too high or too low for temperature, affects etching effect.The mode of measuring media window 4 temperature has multiple, preferably, as shown in Figure 1, can arrange infrared temperature measurement apparatus 5 above medium window 4.
The benefit adopting infrared temperature measurement apparatus 5 pairs of medium windows 4 to carry out thermometric is that infrared temperature measurement apparatus 5 does not directly contact with medium window 4, can not affect the useful life of medium window 4 thus, namely be equivalent to the life cycle extending medium window 4, thus reduces use cost.
Certainly, the present invention is not limited to this, in another embodiment of the present invention, contact temperature-measuring mode also can be adopted to carry out thermometric to medium window 4.
According to the plasma-reaction-chamber 100 of the embodiment of the present invention, can realize medium window 4 quick, evenly heat up, thus improve etching technics etching effect and etching efficiency, simultaneously by arranging contactless infrared temperature measurement apparatus 5, also greatly can extend the useful life of medium window 4, reduce costs.
According to the plasma device of the embodiment of the present invention, comprise the plasma-reaction-chamber 100 according to describing in the above embodiment of the present invention.
Form according to other of the plasma device of the embodiment of the present invention and operation principle etc. for prior art is also known by one of ordinary skilled in the art, be not described in detail here.
In the description of this specification, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " illustrative examples ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present invention or example.In this manual, identical embodiment or example are not necessarily referred to the schematic representation of above-mentioned term.And the specific features of description, structure, material or feature can combine in an appropriate manner in any one or more embodiment or example.
Although illustrate and describe embodiments of the invention, those having ordinary skill in the art will appreciate that: can carry out multiple change, amendment, replacement and modification to these embodiments when not departing from principle of the present invention and aim, scope of the present invention is by claim and equivalents thereof.
Claims (10)
1. a plasma-reaction-chamber, is characterized in that, comprising:
Cavity, has chamber in described cavity;
Electrostatic chuck, described electrostatic chuck is located in described cavity for carrier substrate;
Heater, described heater is located on described cavity for heating described cavity; With
Medium window, described medium window is located at the upper end of described cavity for closing the open top of described chamber, is provided with the heating fluid channel for passing into the heating fluid to described medium window heated for controlling temperature in described medium window.
2. plasma-reaction-chamber according to claim 1, is characterized in that, described heating fluid channel is evenly distributed in described medium window.
3. plasma-reaction-chamber according to claim 1, is characterized in that, described heating fluid channel is vortex shape.
4. plasma-reaction-chamber according to claim 1, is characterized in that, multiple concentric ring shapes that it is the center of circle that described heating fluid channel is formed as with the center of described medium window.
5. plasma-reaction-chamber according to claim 4, is characterized in that, the spacing between adjacent described concentric ring is equal.
6. plasma-reaction-chamber according to claim 1, is characterized in that, the import of described heating fluid channel and export be located at described medium window upper surface or sidewall on.
7. plasma-reaction-chamber according to claim 1, is characterized in that, the import department of described heating fluid channel is connected with feed tube and the exit of described heating fluid channel is connected with drain pipe.
8. the plasma-reaction-chamber according to any one of claim 1-7, is characterized in that, above described medium window, be provided with infrared temperature measurement apparatus.
9. plasma-reaction-chamber according to claim 1, is characterized in that, described medium window is quartz window.
10. a plasma device, is characterized in that, comprises plasma-reaction-chamber as claimed in any one of claims 1-9 wherein.
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| CN103515179B true CN103515179B (en) | 2016-02-10 |
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| CN105609443B (en) * | 2014-11-13 | 2018-09-18 | 北京北方华创微电子装备有限公司 | A kind of coupling window heating component |
| EP3210939A1 (en) * | 2016-02-24 | 2017-08-30 | Casale SA | A reactor for oxidation of ammonia in the production of nitric acid |
| CN109727838B (en) * | 2017-10-31 | 2021-09-17 | 北京北方华创微电子装备有限公司 | Plasma generating cavity and semiconductor processing equipment |
| CN110400763B (en) * | 2018-04-25 | 2022-04-22 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
| CN111755353B (en) * | 2019-03-26 | 2023-07-11 | 北京北方华创微电子装备有限公司 | Warming-up method and etching method |
| CN113013008B (en) * | 2019-12-19 | 2024-06-07 | 中微半导体设备(上海)股份有限公司 | Inductively coupled plasma processing equipment and cover body and dielectric window temperature control method thereof |
| CN111063603B (en) * | 2019-12-30 | 2023-01-17 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
| CN112687583B (en) * | 2020-12-14 | 2024-06-21 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
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| CN1221460A (en) * | 1996-06-05 | 1999-06-30 | 兰姆研究公司 | Temp. controlling method and apparatus for plasma processing chamber |
| WO2010001938A1 (en) * | 2008-07-04 | 2010-01-07 | 東京エレクトロン株式会社 | Plasma processing device, plasma processing method, and mechanism for regulating temperature of dielectric window |
| JP2010073655A (en) * | 2008-09-22 | 2010-04-02 | Tokyo Electron Ltd | Temperature adjustment mechanism and plasma treatment device |
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Patent Citations (3)
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| CN1221460A (en) * | 1996-06-05 | 1999-06-30 | 兰姆研究公司 | Temp. controlling method and apparatus for plasma processing chamber |
| WO2010001938A1 (en) * | 2008-07-04 | 2010-01-07 | 東京エレクトロン株式会社 | Plasma processing device, plasma processing method, and mechanism for regulating temperature of dielectric window |
| JP2010073655A (en) * | 2008-09-22 | 2010-04-02 | Tokyo Electron Ltd | Temperature adjustment mechanism and plasma treatment device |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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