CN103515173B - 用于在碳注入期间延长离子源寿命和改善离子源性能的组合物 - Google Patents

用于在碳注入期间延长离子源寿命和改善离子源性能的组合物 Download PDF

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Publication number
CN103515173B
CN103515173B CN201310245390.4A CN201310245390A CN103515173B CN 103515173 B CN103515173 B CN 103515173B CN 201310245390 A CN201310245390 A CN 201310245390A CN 103515173 B CN103515173 B CN 103515173B
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China
Prior art keywords
carbon
gas
ion source
mixture
dopant gas
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CN201310245390.4A
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Chinese (zh)
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CN103515173A (zh
Inventor
A.K.辛哈
L.A.布朗
S.坎珀
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Praxair Technology Inc
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Praxair Technology Inc
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Publication of CN103515173A publication Critical patent/CN103515173A/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
CN201310245390.4A 2012-06-20 2013-06-20 用于在碳注入期间延长离子源寿命和改善离子源性能的组合物 Active CN103515173B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/527684 2012-06-20
US13/527,684 US8603363B1 (en) 2012-06-20 2012-06-20 Compositions for extending ion source life and improving ion source performance during carbon implantation

Publications (2)

Publication Number Publication Date
CN103515173A CN103515173A (zh) 2014-01-15
CN103515173B true CN103515173B (zh) 2017-04-26

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CN201310245390.4A Active CN103515173B (zh) 2012-06-20 2013-06-20 用于在碳注入期间延长离子源寿命和改善离子源性能的组合物

Country Status (6)

Country Link
US (1) US8603363B1 (https=)
EP (1) EP2677058A1 (https=)
JP (1) JP5684860B2 (https=)
KR (1) KR101509312B1 (https=)
CN (1) CN103515173B (https=)
TW (1) TWI490163B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11264228B2 (en) * 2018-10-09 2022-03-01 Savannah River Nuclear Solutions, Llc Method of making a carbon filament for thermal ionization
WO2021011143A1 (en) 2019-07-18 2021-01-21 Entegris, Inc. Ion implantation system with mixture of arc chamber materials
US11887806B2 (en) * 2022-04-07 2024-01-30 Applied Materials, Inc. Composite ion source based upon heterogeneous metal-metal fluoride system

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CN1922709A (zh) * 2004-03-26 2007-02-28 应用材料有限公司 离子源
CN101981661A (zh) * 2008-02-11 2011-02-23 高级技术材料公司 在半导体处理系统中离子源的清洗

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JP3268180B2 (ja) 1994-11-18 2002-03-25 株式会社東芝 イオン発生装置、イオン照射装置、及び半導体装置の製造方法
US5943594A (en) 1997-04-30 1999-08-24 International Business Machines Corporation Method for extended ion implanter source lifetime with control mechanism
US5940724A (en) 1997-04-30 1999-08-17 International Business Machines Corporation Method for extended ion implanter source lifetime
US6135128A (en) * 1998-03-27 2000-10-24 Eaton Corporation Method for in-process cleaning of an ion source
JPH11340321A (ja) * 1998-05-27 1999-12-10 Sony Corp 半導体装置およびその製造方法
US6211092B1 (en) * 1998-07-09 2001-04-03 Applied Materials, Inc. Counterbore dielectric plasma etch process particularly useful for dual damascene
US6215125B1 (en) 1998-09-16 2001-04-10 International Business Machines Corporation Method to operate GEF4 gas in hot cathode discharge ion sources
US6297163B1 (en) * 1998-09-30 2001-10-02 Lam Research Corporation Method of plasma etching dielectric materials
US6756600B2 (en) 1999-02-19 2004-06-29 Advanced Micro Devices, Inc. Ion implantation with improved ion source life expectancy
US6464891B1 (en) * 1999-03-17 2002-10-15 Veeco Instruments, Inc. Method for repetitive ion beam processing with a carbon containing ion beam
JP3400770B2 (ja) * 1999-11-16 2003-04-28 松下電器産業株式会社 エッチング方法、半導体装置及びその製造方法
US6432318B1 (en) * 2000-02-17 2002-08-13 Applied Materials, Inc. Dielectric etch process reducing striations and maintaining critical dimensions
US7030029B2 (en) * 2000-05-12 2006-04-18 Tokyo Electron Limited Method of high selectivity SAC etching
US6362109B1 (en) * 2000-06-02 2002-03-26 Applied Materials, Inc. Oxide/nitride etching having high selectivity to photoresist
US6559462B1 (en) 2000-10-31 2003-05-06 International Business Machines Corporation Method to reduce downtime while implanting GeF4
US6960535B1 (en) * 2004-05-14 2005-11-01 Sharp Kabushiki Kaisha Dual damascene etching process
US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
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JP2010153272A (ja) * 2008-12-26 2010-07-08 Siltronic Ag イオン注入方法、及び炭化シリコンの製造方法
JP5595795B2 (ja) * 2009-06-12 2014-09-24 東京エレクトロン株式会社 プラズマ処理装置用の消耗部品の再利用方法
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US8158445B2 (en) 2009-11-11 2012-04-17 Samsung Electronics Co., Ltd. Methods of forming pattern structures and methods of manufacturing semiconductor devices using the same
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US9805912B2 (en) * 2010-11-17 2017-10-31 Axcelis Technologies, Inc. Hydrogen COGas for carbon implant
EP3267470A3 (en) 2012-02-14 2018-04-18 Entegris, Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
US20130341761A1 (en) * 2012-06-20 2013-12-26 Ashwini K. Sinha Methods for extending ion source life and improving ion source performance during carbon implantation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1922709A (zh) * 2004-03-26 2007-02-28 应用材料有限公司 离子源
CN101981661A (zh) * 2008-02-11 2011-02-23 高级技术材料公司 在半导体处理系统中离子源的清洗

Also Published As

Publication number Publication date
JP2014003023A (ja) 2014-01-09
KR101509312B1 (ko) 2015-04-07
US20130341568A1 (en) 2013-12-26
US8603363B1 (en) 2013-12-10
EP2677058A1 (en) 2013-12-25
KR20130142955A (ko) 2013-12-30
CN103515173A (zh) 2014-01-15
TW201414672A (zh) 2014-04-16
JP5684860B2 (ja) 2015-03-18
TWI490163B (zh) 2015-07-01

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