CN103514895A - Magnetic storage unit and preparation method thereof - Google Patents
Magnetic storage unit and preparation method thereof Download PDFInfo
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- CN103514895A CN103514895A CN201210392221.9A CN201210392221A CN103514895A CN 103514895 A CN103514895 A CN 103514895A CN 201210392221 A CN201210392221 A CN 201210392221A CN 103514895 A CN103514895 A CN 103514895A
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Abstract
The invention provides a magnetic storage unit and a preparation method thereof, wherein the preparation method comprises the following steps: providing a temporary substrate having a surface, and a carbon solvent layer on the formed surface; (B) forming a graphene layer on the carbon solvent layer by using a carbon source, wherein the graphene layer comprises a first surface and a second surface opposite to the first surface, and the first surface of the graphene layer is abutted against the carbon solvent layer; (C) providing a substrate, forming an adhesive layer on the surface of the substrate, and removing the temporary substrate and the carbon solvent layer from the first surface of the graphene layer after the adhesive layer is attached to the second surface of the graphene layer; and (D) processing the first surface of the graphene layer by laser drilling, such that a plurality of holes are formed on the first surface of the graphene layer. Thus, the present invention provides a magnetic storage cell having a high sector density.
Description
Technical field
The invention relates to a kind of magnetic storage element and preparation method thereof, especially refer to magnetic storage element that can reach high magnetic storage density and preparation method thereof in a kind of structure.
Background technology
In recent years in the develop rapidly of infotech, the growth of hard disc of computer storage density very makes one notice: before 10 years, its unit plane density is with annual 60% speed increment, and the increased percentage example of storage density reached absolutely in recent years, with the prediction far beyond Mooreis law.
And generally store in hard disk unit, the magnetic interfaces of hard disk is to have numerous magnetic-particle to form, and via many magnetic-particles, can form the least unit of a storing information, one (bit), and each can regard a sector as, it is higher that so-called hard disk storage volume is formed ，Er sector unit area density by numerous sector exactly, also representing that dish storage volume is larger.Therefore, how on the disk interface in the time of each square, promoting sector density and expand storage volume, is current problem in fact.
One sector of general hard disk memory device is consisted of 1,000,000 magnetic-particles, yet, store now the material that hard disk unit is used, as class magnet materials such as cobalt-base alloys, reach 10 terabyte (Terabyte, TB) above capacity requirement, except using now the limit of sector density of material itself, read/write head has arrived on nanoscale, and material is easily subject to the impact of thermal perturbation, also therefore, need a kind of new magnetic material of exploitation badly, it has high rigidity ，Gao sector density, and light-duty is research primary goal.
Graphene is generally defined as single atomic thickness and has sp
2the flat board of the carbon atom of bond, plural number carbon atom is the integrated benzene ring structure with honeycomb crystal lattice of compact reactor, this two-dimensional material, under the plane of layer structure, present high mat mobility and excellent thermal conductivity, and its hardness has the intensity of 20 times higher than iron.Graphite is comprised of the lamellar graphite alkene of a plurality of stacked in parallel each other.
The physical property that Graphene has makes many scientific and technological industrys do one's utmost to study in Application and Development, and in general, the two-dimentional interface of one complete graphene layer, itself be not have magnetic, but, on the marginal surface of graphene layer, due to what have that defect produces, wave key (dangling bond), the spin of electronics itself can cause the generation of ferromagnetic characteristic.
Summary of the invention
The object of the present invention is to provide the magnetic storage element of a kind of high sector density.
Another object of the present invention is to provide a kind of method of preparing above-mentioned magnetic storage element.
For achieving the above object, the preparation method of magnetic storage element provided by the invention, comprising:
(A) provide a temporary transient base material, there is a surface, and a carbon solvent layer is in forming on this surface;
(B) by a carbon source, form a graphene layer on this carbon solvent layer, this graphene layer has a first surface and a second surface with respect to this first surface, and this first surface of this graphene layer connects and is butted on carbon solvent layer;
(C) provide a substrate, and on this substrate, form an adhesion layer, and this adhesion layer adheres to after the second surface of this graphene layer, from this first surface of this graphene layer, remove this temporary substrate and this carbon solvent layer; And
(D) by the mode of laser drill, be machined in this first surface of this graphene layer, a plurality of holes are formed on this first surface of this graphene layer.
Described preparation method, wherein, the diameter of those holes is 1 nanometer to 20 nanometer.
Described preparation method, wherein, the surface area ratio of those holes and this first surface layer is 1/500 to 1/100.
Described preparation method wherein, comprises plating one diamond like carbon layer on this first surface of step (E), and is covered in those holes after step (D).
Described preparation method, wherein, this graphene layer comprises an alloy, the group that the free hydrogen of its at least one choosing, oxygen, nitrogen, fluorine, boron, chlorine and mixing thereof form.
Described preparation method, wherein, the content of this alloy is 5% to 50% atomic percent.
Described preparation method, wherein, the thickness of this graphene layer is controlled by this carbon solvent layer, and this carbon source is supplied by a carbonaceous gas.
Described preparation method, wherein, this carbonaceous gas is methane or acetylene.
Described preparation method, wherein, this graphene layer is comprised of an individual layer or plural layer.
Described preparation method, wherein, this graphene layer is the plural layer of 10 to 100 layers.
Described preparation method, wherein, the material of this substrate is stupalith, glass material or metal material.
Described preparation method, wherein, comprises and passes into a reacting gas in step (C).
Described preparation method, wherein, the group that the free hydrogen of at least one choosing of this reacting gas, oxygen, fluorine-containing tetrafluoromethane gas and mixing thereof form.
Described preparation method, wherein, this carbon solvent layer is to utilize etching solution to remove.
Described preparation method, wherein, this etching solution is the group that the free sulfuric acid of at least one choosing, hydrochloric acid, chloroazotic acid, chloric acid and mixing thereof form.
Described preparation method, wherein, the material of this temporary transient base material is copper, silicon, sapphire, monox, silicon dioxide, quartz or glass.
Described preparation method, wherein, the material of this carbon solvent layer is metal.
Described preparation method, wherein, the thickness of this carbon solvent layer is between between 1 nanometer to 1 micron.
Described preparation method, wherein, this metal is lanthanum, cerium, nickel, cobalt, iron, palladium, platinum and alloy thereof.
Described preparation method, wherein, the material of this adhesion layer is silit, silicon dioxide, double faced adhesive tape, acryl glue or metal adhesive agent.
Magnetic storage element provided by the invention, is to obtain according to above-mentioned preparation method, and it comprises:
One substrate, has a surface;
One adhesion layer, is arranged on this substrate; And
One graphene layer, be arranged at this adhesion layer, this graphene layer has a first surface and a second surface with respect to this first surface, and this second surface of this graphene layer connects and be butted on this adhesion layer, and this first surface of this graphene layer has a plurality of holes.
Described magnetic storage element, wherein, the diameter of this plural number hole is 1 nanometer to 20 nanometer.
Described magnetic storage element, wherein, the surface area ratio of this plural number hole and this first surface layer is 1/500 to 1/100.
Described magnetic storage element, wherein, this graphene layer comprises an alloy, the group that the free hydrogen of its at least one choosing, oxygen, nitrogen, fluorine, boron, chlorine and mixing thereof form.
Described magnetic storage element, wherein, the content of this alloy is 5% to 50% atomic percent.
Described magnetic storage element, wherein, this graphene layer is comprised of an individual layer or plural layer.
Described magnetic storage element, wherein, this graphene layer is the plural layer of 10 to 100 layers.
Described magnetic storage element, wherein, the material of this substrate is stupalith, glass material or metal material.
Described magnetic storage element, wherein, the material of this adhesion layer is silit, silicon dioxide, double faced adhesive tape, acryl glue or metal adhesive agent.
Described magnetic storage element, wherein, comprises a diamond like carbon layer, and such diamond layer is arranged on this first surface.
By enforcement of the present invention, can prepare the magnetic storage element of high sector density, and promote magnetic memory storage capacity.
Accompanying drawing explanation
Figure 1A to 1F is the preparation flow structural representation of one embodiment of the invention magnetic storage element.Primary clustering symbol description in accompanying drawing:
1 temporary transient base material, 11 surfaces, 2 carbon solvent layers, 3 graphene layers, 31 first surfaces, 311 holes, 32 second surfaces, 4 substrates, 5 adhesion layers, 6 diamond like carbon layers.
Embodiment
The present invention, by the preparation for Graphene, works out the magnetic storage of a kind of high sector density.
Meanwhile, the invention provides a kind of preparation method of magnetic storage element, comprising:
(A) provide a temporary transient base material, there is a surface, and a carbon solvent layer is in forming on surface;
(B) by a carbon source, form a graphene layer on carbon solvent layer, graphene layer comprises a first surface and a second surface with respect to first surface, and the first surface of graphene layer connects and is butted on carbon solvent layer;
(C) provide a substrate, and on substrate, form an adhesion layer, and adhesion layer adheres to after the second surface of graphene layer, from the first surface of graphene layer, remove temporary substrate and carbon solvent layer; And
(D) by the mode of laser drill, be machined in the first surface of graphene layer, a plurality of holes are formed on the first surface of graphene layer.
The present invention utilizes laser for graphene layer, to carry out the action of Drilling operation, for hole out the hole of nanoscale pore size of superficial layer, make to form on first surface a plurality of holes, make the Graphene crystal arrangement of first surface produce defect, from the sexangle crystal block section atom of script first surface, depart from surface, in each defect of intention, there is the key of waving, thereby generation Spontaneous Magnetic Moments, and then the sector of formation atom level, and the sector of these numerous atom level, in order to be used as a magnetic storage element, can by externally-applied magnetic field (as the read/write head of hard disk unit) reach magnetic storage element and can read in and the action of taking out.
Therefore, can obtain the magnetic storage element of a kind of high sector density through preparation method thus, and promote magnetic memory storage capacity.
In the preparation method of magnetic storage element of the present invention, the laser that the mode of laser drill is used can be an extreme ultraviolet laser (EUV Laser), makes the pore size of desired laser drill can reach nano-grade size.
In the preparation method of magnetic storage element of the present invention, the diameter of a plurality of holes is 1 nanometer to 20 nanometer, periodicity hexagonal crystal face that the first surface of graphene layer has is arranged and produced defect, and then produce unnecessary electronics, and form the so-called key that waves, make first surface there is ferromagnetic characteristics.
In the preparation method of magnetic storage element of the present invention, the surface area ratio of a plurality of holes and first surface layer is 1/500 to 1/100, causes graphene layer impaired.
In the preparation method of magnetic storage element of the present invention, after step (D), can also comprise plating one diamond like carbon layer on step (E) first surface, and be covered in first surface and a plurality of hole of graphene layer, therefore, diamond like carbon layer can prevent the oxidation of magnetic storage element and corrosion, and takes into account on magnetic storage element surface the solid lubricant layer of performances such as adhering to, lubricate and resistance to wear.
In the preparation method of magnetic storage element of the present invention, graphene layer can comprise an alloy, the group that the free hydrogen of its at least one choosing, oxygen, nitrogen, fluorine, boron, chlorine and mixing thereof form; In addition, the content of alloy is 5% to 50% atomic percent, graphene layer can be become and have magnetic properties.
In the preparation method of magnetic storage element of the present invention, in step (B), carbon source can utilize chemical vapour deposition technique to form graphene layer on carbon solvent layer surface; In addition, carbon source is supplied by a carbonaceous gas, in order to control the growth rate of graphene layer, is preferably, and carbonaceous gas can be methane or acetylene; In addition, the thickness of carbon solvent layer can be in order to control the thickness (that is, the number of plies) of graphene layer, and the thickness that is preferably carbon solvent layer can be between between 1 nanometer to 1 micron.
In the preparation method of magnetic storage element of the present invention, graphene layer is comprised of an individual layer or plural layer, is preferably graphene layer and can be the plural layer between 10 to 100 layers.
In the preparation method of magnetic storage element of the present invention, substrate can be stupalith, glass material or metal material, the substrate of usining as magnetic storage element such as: aluminium oxide and ceramic material, aluminium alloy, hard glass of coordinating titanium carbide etc.
In the preparation method of magnetic storage element of the present invention, in step (C), also comprise and pass into a reacting gas, and be, with heated filament, microwave, reacting gas is added to thermosetting action of plasma in graphene layer, wherein, reacting gas can the free hydrogen of at least one choosing, the group that forms of oxygen, fluorine-containing tetrafluoromethane gas and mixing thereof; Therefore, reacting gas is the graphene layer forming on carbon solvent layer in order to corrode, and eliminates the unsettled carbon atom of fault location in Graphene, and then increases graphene layer purity.
In the preparation method of magnetic storage element of the present invention, carbon solvent layer can utilize etching solution to remove, and wherein, etching solution can be the group that the free sulfuric acid of at least one choosing, hydrochloric acid, chloroazotic acid, chloric acid and mixing thereof form.
In the preparation method of magnetic storage element of the present invention, the material of temporary transient base material can be copper, silicon, sapphire, monox, silicon dioxide, quartz or glass.
In the preparation method of magnetic storage element of the present invention, the material of carbon solvent layer can be a metal, is preferably, and metal can be lanthanum, cerium, nickel, cobalt, iron, palladium, platinum and alloy thereof.
In the preparation method of magnetic storage element of the present invention, the material of adhesion layer can silit, silicon dioxide, double faced adhesive tape or acryl glue.
The another kind of aspect of implementing of the present invention is to provide a kind of magnetic storage element, and it comprises:
One substrate, has a surface; One adhesion layer, is arranged on substrate; And a graphene layer, being arranged at adhesion layer, this graphene layer has a first surface and a second surface with respect to first surface, and the second surface of graphene layer connects and is butted on adhesion layer, and the first surface of graphene layer has plural hole.
In magnetic storage element of the present invention, the diameter of a plurality of holes is between 1 nanometer to 20 nanometer, periodicity hexagonal crystal face that the first surface of graphene layer has is arranged and produced defect, and then produce unnecessary electronics, and form the so-called key that waves, make first surface there is ferromagnetic characteristics.
In magnetic storage element of the present invention, the surface area ratio of a plurality of holes and first surface layer is between 1/500 to 1/100, causes graphene layer impaired.
In magnetic storage element of the present invention, graphene layer can comprise an alloy, and it is the group that the free hydrogen of at least one choosing, oxygen, nitrogen, fluorine, boron, chlorine and mixing thereof form; And the content of alloy is 5% to 50% atomic percent, graphene layer can be become and there is magnetic properties.
In magnetic storage element of the present invention, graphene layer is comprised of an individual layer or plural layer; Wherein, graphene layer can be the plural layer between 10 to 100 layers.
In magnetic storage element of the present invention, substrate can be stupalith, glass material or metal material, for example: aluminium oxide and titanium carbide ceramic material, aluminium alloy, hard glass, the substrate of usining as magnetic storage element.
In magnetic storage element of the present invention, the material of adhesion layer is silit, silicon dioxide, double faced adhesive tape, acryl glue or metal adhesive agent.
In magnetic storage element of the present invention, first surface can also comprise a diamond like carbon layer, therefore, diamond like carbon layer can prevent that magnetic storage element from oxidation and corrosion occurring, and takes into account on magnetic storage element surface the solid lubricant layer of performances such as adhering to, lubricate and resistance to wear.
Below that those skilled in the art can understand other advantages of the present invention and effect easily by content disclosed in the present specification by particular specific embodiment explanation embodiments of the present invention.The present invention also can be implemented or be applied by other different specific embodiments, and the every details in this instructions also can, based on different viewpoints and application, be carried out various modifications and change under not departing from spirit of the present invention.
In embodiments of the invention, those accompanying drawings are the schematic diagram of simplification.Only those icons only show the assembly relevant with the present invention, the aspect that its shown assembly is non-while being actual enforcement, and component count, shape equal proportion during its actual enforcement is an optionally design, and its assembly layout kenel may be more complicated.
Refer to Figure 1A to Fig. 1 F, it shows the preparation method's of the present embodiment magnetic storage element flowage structure schematic diagram.
First, please refer to Figure 1A, a temporary transient base material 1 is provided, there is a surface 11, and a carbon solvent layer 2 is in forming on surface 11; In the present embodiment, the material of temporary transient base material 1 can be used copper, sapphire, silicon, monox, silicon dioxide, quartz or glass, and at this, selecting sapphire is temporary transient base material 1; And carbon solvent layer 2 can be used lanthanum, cerium, nickel, cobalt, iron, palladium, platinum and alloy thereof, at this, select cobalt as carbon solvent layer 2, in addition, the thickness of carbon solvent layer 2 is 5 nanometers.
Then, please refer to the drawing 1B, by a carbon source (figure do not show), form a graphene layer 3 on carbon solvent layer 2, graphene layer 3 comprises a first surface 31 and a second surface 32 with respect to first surface 31, and the first surface 31 of graphene layer 3 connects and is butted on carbon solvent layer 2.
In the present embodiment, carbon source is to be supplied by a carbonaceous gas (figure do not show) institute, wherein, carbonaceous gas can be methane or or acetylene, at this, select methane; Carbonaceous gas is formed to graphene layer 3 by chemical vapour deposition technique, and graphene layer 3 is that plural layer is stacking, and the number of plies of graphene layer 3 is 10 layers.In order to make to reach the number of plies of required graphene layer 3, the number of plies of graphene layer 3 can be controlled by the thickness of carbon solvent layer 2; In addition, all right discontinuous supply of carbonaceous gas, to control the growth rate of graphene layer 3.
Then, please refer to Fig. 1 C and 1D, a substrate 4 is provided, and on substrate 4, form an adhesion layer 5, and adhesion layer 5 adheres to after the second surface 32 of graphene layer 3, by an etching solution (figure does not show), from the first surface 31 of graphene layer 3, remove temporary substrate 1 and carbon solvent layer 2.
In the present embodiment, the material of substrate 4 can be selected stupalith, glass material or metal material, in this case aluminium oxide and titanium carbide ceramic material; And the material of adhesion layer 5 can be selected silit, silicon dioxide, double faced adhesive tape, acryl glue or metal adhesive agent, silit in this case; In addition, etching solution can be the free sulfuric acid of at least one choosing, hydrochloric acid, chloroazotic acid, chloric acid and mixes the group forming, and at this, selects chloroazotic acid.
In addition, also can pass into a reacting gas (not shown), this reacting gas is the graphene layer 3 forming on carbon solvent layer 2 in order to corrode, and eliminates the unsettled carbon atom of fault location in Graphene, and then increases the purity of graphene layer 3.Wherein, aforesaid reacting gas can be hydrogen, tetrafluoromethane or fluorine-containing gas, and with heated filament or microwave mode, reacting gas is added to thermosetting plasma.
Then, refer to Fig. 1 E, by an extreme ultraviolet laser (EUV Laser, and ultraviolet wavelength is 13.5 nanometers) in the mode of laser drill, be machined in the first surface 31 of graphene layer 3, a plurality of holes 311 are formed on the first surface 31 of graphene layer 3, the hole size of a plurality of holes 311 is about 15 nanometers, and the surface area of those holes 311 account for graphene layer 3 first surface 31 1/100.
And in the present embodiment, an alloy is added in the front and back that can also be machined in the mode of laser drill the first surface 31 of graphene layer 3, wherein, this alloy is the group that the free hydrogen of at least one choosing, oxygen, nitrogen, fluorine, boron, chlorine and mixing thereof form, and the content of this alloy atomic percent that is 5%.
Finally, refer to Fig. 1 F, the present invention is plating one diamond like carbon layer 6 on first surface 31 further, and is covered in first surface 31 and a plurality of hole 311 of graphene layer 3, utilizes diamond like carbon layer 6 protection first surface 31 and a plurality of hole 311.
Accordingly, as shown in Fig. 1 F, the above-mentioned magnetic storage element making, it comprises: a substrate 4, one adhesion layer 5, one graphene layer 3 and a diamond like carbon layer 6, wherein, this adhesion layer 5 is arranged on substrate 4, this graphene layer 3 is to be arranged on adhesion layer 5, this adhesion layer 5 has a first surface 31 and a second surface 32 with respect to first surface 31, and the second surface 32 of this graphene layer 3 connects and is butted on adhesion layer 5, in addition, the first surface 31 of graphene layer 3 has a plurality of holes 311, and a diamond like carbon layer 6 is covered on the first surface 31 and a plurality of hole 311 of graphene layer 3.
In the present embodiment, substrate 4 be aluminium oxide and titanium carbide ceramic material, adhesion layer 5 for silit, graphene layer 3 for plural layer stacking, and the number of plies of graphene layer 3 is 10 layers, and the pore size of a plurality of holes 311 is about 15 nanometers, and the surface area of those holes 311 account for graphene layer 3 first surface 31 1/100.
In sum, utilize laser to carry out Drilling operation for graphene layer 3, make the hole 311 in 31 formation a plurality of nanoscales apertures on first surface, and make the Graphene crystal arrangement of first surface 31 produce defect, from the surperficial sexangle crystal block section atom of script, depart from first surface 311, in each defect of intention, there is the key of waving, thereby generation Spontaneous Magnetic Moments, and then the sector of formation atom level, and the sector of these numerous atom level, can by externally-applied magnetic field (as the read/write head of hard disk unit) reach and can read in and the action of taking out magnetic storage element of the present invention, in order to be used as magnetic, to store and read.
Therefore, can obtain via preparation method of the present invention the magnetic storage element of a kind of high sector density, and promote magnetic memory storage capacity.
Claims (30)
1. a preparation method for magnetic storage element, comprising:
(A) provide a temporary transient base material, there is a surface, and a carbon solvent layer is in forming on this surface;
(B) by a carbon source, form a graphene layer on this carbon solvent layer, this graphene layer has a first surface and a second surface with respect to this first surface, and this first surface of this graphene layer connects and is butted on carbon solvent layer;
(C) provide a substrate, and on this substrate, form an adhesion layer, and this adhesion layer adheres to after the second surface of this graphene layer, from this first surface of this graphene layer, remove this temporary substrate and this carbon solvent layer; And
(D) by the mode of laser drill, be machined in this first surface of this graphene layer, a plurality of holes are formed on this first surface of this graphene layer.
2. preparation method as claimed in claim 1, wherein, the diameter of those holes is 1 nanometer to 20 nanometer.
3. preparation method as claimed in claim 1, wherein, the surface area ratio of those holes and this first surface layer is 1/500 to 1/100.
4. preparation method as claimed in claim 1 wherein, comprises plating one diamond like carbon layer on this first surface of step (E), and is covered in those holes after step (D).
5. preparation method as claimed in claim 1, wherein, this graphene layer comprises an alloy, the group that the free hydrogen of its at least one choosing, oxygen, nitrogen, fluorine, boron, chlorine and mixing thereof form.
6. preparation method as claimed in claim 5, wherein, the content of this alloy is 5% to 50% atomic percent.
7. preparation method as claimed in claim 1, wherein, the thickness of this graphene layer is controlled by this carbon solvent layer, and this carbon source is supplied by a carbonaceous gas.
8. preparation method as claimed in claim 7, wherein, this carbonaceous gas is methane or acetylene.
9. preparation method as claimed in claim 1, wherein, this graphene layer is comprised of an individual layer or plural layer.
10. preparation method as claimed in claim 1, wherein, this graphene layer is the plural layer of 10 to 100 layers.
11. preparation methods as claimed in claim 1, wherein, the material of this substrate is stupalith, glass material or metal material.
12. preparation methods as claimed in claim 1, wherein, comprise and pass into a reacting gas in step (C).
13. preparation methods as claimed in claim 12, wherein, the group that the free hydrogen of at least one choosing of this reacting gas, oxygen, fluorine-containing tetrafluoromethane gas and mixing thereof form.
14. preparation methods as claimed in claim 1, wherein, this carbon solvent layer is to utilize etching solution to remove.
15. preparation methods as claimed in claim 14, wherein, this etching solution is the group that the free sulfuric acid of at least one choosing, hydrochloric acid, chloroazotic acid, chloric acid and mixing thereof form.
16. preparation methods as claimed in claim 1, wherein, the material of this temporary transient base material is copper, silicon, sapphire, monox, silicon dioxide, quartz or glass.
17. preparation methods as claimed in claim 1, wherein, the material of this carbon solvent layer is metal.
18. preparation methods as claimed in claim 1, wherein, the thickness of this carbon solvent layer is between between 1 nanometer to 1 micron.
19. preparation methods as claimed in claim 17, wherein, this metal is lanthanum, cerium, nickel, cobalt, iron, palladium, platinum and alloy thereof.
20. preparation methods as claimed in claim 1, wherein, the material of this adhesion layer is silit, silicon dioxide, double faced adhesive tape, acryl glue or metal adhesive agent.
21. 1 kinds of magnetic storage elements, are to obtain according to the preparation method described in any one in claim 1 to 20, and it comprises:
One substrate, has a surface;
One adhesion layer, is arranged on this substrate; And
One graphene layer, be arranged at this adhesion layer, this graphene layer has a first surface and a second surface with respect to this first surface, and this second surface of this graphene layer connects and be butted on this adhesion layer, and this first surface of this graphene layer has a plurality of holes.
22. magnetic storage elements as claimed in claim 21, wherein, the diameter of this plural number hole is 1 nanometer to 20 nanometer.
23. magnetic storage elements as claimed in claim 21, wherein, the surface area ratio of this plural number hole and this first surface layer is 1/500 to 1/100.
24. magnetic storage elements as claimed in claim 21, wherein, this graphene layer comprises an alloy, the group that the free hydrogen of its at least one choosing, oxygen, nitrogen, fluorine, boron, chlorine and mixing thereof form.
25. magnetic storage elements as claimed in claim 24, wherein, the content of this alloy is 5% to 50% atomic percent.
26. magnetic storage elements as claimed in claim 21, wherein, this graphene layer is comprised of an individual layer or plural layer.
27. magnetic storage elements as claimed in claim 26, wherein, this graphene layer is the plural layer of 10 to 100 layers.
28. magnetic storage elements as claimed in claim 21, wherein, the material of this substrate is stupalith, glass material or metal material.
29. magnetic storage elements as claimed in claim 21, wherein, the material of this adhesion layer is silit, silicon dioxide, double faced adhesive tape, acryl glue or metal adhesive agent.
30. magnetic storage elements as claimed in claim 21, wherein, comprise a diamond like carbon layer, and such diamond layer is arranged on this first surface.
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| TW101122827A TW201401276A (en) | 2012-06-26 | 2012-06-26 | Magnetic data storage unit and method for fabricating the same |
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