CN103513508A - Gray-scale photomask, making method and method for forming channel by use of gray-scale photomask - Google Patents
Gray-scale photomask, making method and method for forming channel by use of gray-scale photomask Download PDFInfo
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- CN103513508A CN103513508A CN201210204320.XA CN201210204320A CN103513508A CN 103513508 A CN103513508 A CN 103513508A CN 201210204320 A CN201210204320 A CN 201210204320A CN 103513508 A CN103513508 A CN 103513508A
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Abstract
The invention discloses a gray-scale photomask, which comprises a first pattern and a second pattern. The first pattern has a first line width, the second pattern has a second line width, and the second pattern has a gray scale density. The invention also provides a making method of the gray-scale potomask, as well as a method for forming a channel on a substrate by use of the gray-scale photomask.
Description
Technical field
This kind of structure and its formation method that has related to photomask, special, relate to a kind of structure and its formation method of excimer laser GTG photomask.
Background technology
In modern information society, by integrated circuit (integrated circuit, IC) microprocessing systems forming is generally used in the every aspect of life already, such as the electrical home appliances of automatic control, mobile communication equipment, electronic calculator etc., has the use of integrated circuit.And along with day by day the progressing greatly of science and technology, and the various imaginations of human society to electronic product, make integrated circuit also toward more polynary, more accurate, more small-sized future development.
In semiconductor technology, for the pattern of integrated circuit is successfully transferred on semi-conductor chip, must first circuit pattern be designed on a photomask (photomask) layout, the photomask pattern of exporting according to photomask layout afterwards (photomask pattern) is made a photomask, then by photoetching process by the design transfer on photomask to this semi-conductor chip.Develop at present a kind of brand-new patterning techniques, be called excimer laser.The English of excimer laser is Excimer Laser, and this word of Excimer is the merging of Excited Dimer, is the dipolymer being excited.The principle of excimer laser is to be applied in mixed gas with high-tension current, with the of short duration element in mixed gas that excites, to form the unstable dipolymer of high energy.This dipolymer is emitted laser immediately, and this laser can go out in semiconductor subassembly ablation the assembly of patterning.
In existing excimer laser, still have many problems to overcome, wherein the most significant Shi“ refraction angle limit (refractive angle limitation) " and " column of smoke effect (plume effect) ".Please refer to Fig. 1, be depicted as the schematic diagram that the refraction angle limit in prior art affects ablation depth.As shown in Figure 1, laser 100 can produce a refraction effect when through photomask 102, then at substrate 104, focuses on and carries out ablation.And along with target line more and more thinner (the Tu1Zhong Yue left side represents that live width is thinner), the irrigation canals and ditches shape of its formation also can become V-type irrigation canals and ditches gradually by U-shaped irrigation canals and ditches.Some compared with the figure on fine rule road in, when ablation depth is in laser 100 both sides joinings when following (as the A point of Fig. 1), laser 100 is difficult to focus on and causes Recession rate slow, often need to increase the ablation time just can reach the predetermined degree of depth, but this tends to affect the degree of depth of other thick circuit figure.
On the other hand, in the circuit of large-size, the figure degree of depth usually can be affected by column of smoke effect.Column of smoke effect refers in the figure of large area or thick circuit, carries out can producing a large amount of micro mist bits on ablation Shi interface, and these micro mist bits can absorb a part of laser energy, make the rate reduction of ablation, therefore cause the figure degree of depth not enough.
Therefore, be that " column of smoke effect " or " the refraction angle limit " all can make the ablation depth producing not meet original design, therefore can reduce the quality of element, formed a problem of desiring most ardently solution.
Summary of the invention
The present invention proposes a kind of GTG photomask (Gray-Tone mask is again gray tone photomask) with and forming method thereof.Utilize GTG photomask of the present invention, can form the figure circuit that the degree of depth is consistent.
According to an embodiment of the invention, the invention provides a kind of GTG photomask, include one first pattern and one second pattern.The first pattern has one first live width, and the second pattern has one second live width, and wherein the second pattern has a GTG density.
Embodiment according to another preferred, the invention provides a kind of formation method of GTG photomask.First one substrate is provided, and provides a photomask, photomask to there is one first figure to there is one first live width, and a second graph has one second live width.Then with photomask, carry out a direct laser ablation process, to form corresponding the first figure of one first irrigation canals and ditches and there is one first degree of depth in substrate, and the corresponding second graph of one second irrigation canals and ditches there is one second degree of depth.One GTG photomask is finally provided, and GTG photomask has the first figure and second graph, and wherein second graph has a GTG density.
Embodiment according to another preferred, the present invention also provides a kind of method that forms irrigation canals and ditches in substrate.First with preceding method, form after a GTG photomask, then with GTG photomask, carry out another Direct Laser ablating technics, to form corresponding the first figure of one the 4th irrigation canals and ditches in another substrate, and the corresponding second graph of one the 5th irrigation canals and ditches, wherein the 4th irrigation canals and ditches and the 5th irrigation canals and ditches all have a predetermined depth.
GTG photomask and its formation method that the present invention proposes, be to form by measurement the compensation that trench depth carries out GTG figure, can effectively get rid of column of smoke effect, the refraction angle limit, or the impact of other factors.
Accompanying drawing explanation
Figure 1 shows that the refraction angle limit in prior art affects the schematic diagram of ablation depth.
Fig. 2 is to Figure 5 shows that a kind of step schematic diagram of making GTG photomask of the present invention.
Figure 6 shows that the schematic diagram of GTG photomask in another embodiment of the present invention.
Figure 7 shows that the schematic diagram of GTG photomask in further embodiment of this invention.
Figure 8 shows that the presentation graphs of separate regression steps of the present invention.
Wherein, description of reference numerals is as follows:
100 laser 310c the tenth irrigation canals and ditches
102 photomask 312c the 11 irrigation canals and ditches
104 substrate 314c the 12 irrigation canals and ditches
300 substrate 316 laser
302 photomask 320a GTG photomasks
304 first figure 321 transparency carriers
306 second graph 320b GTG photomasks
308 the 3rd figure 320c GTG photomasks
310 first irrigation canals and ditches 322 sites
312 second irrigation canals and ditches 323 light-proof materials
314 the 3rd irrigation canals and ditches w1 the first width
310a the 4th irrigation canals and ditches w2 the second width
312a the 5th irrigation canals and ditches w3 the 3rd width
314a the 6th irrigation canals and ditches d1 first degree of depth
310b the 7th irrigation canals and ditches d2 second degree of depth
312b the 8th irrigation canals and ditches d3 the 3rd degree of depth
314b the 9th irrigation canals and ditches d ' desired depth
Embodiment
For making the those skilled in the art of the technical field of the invention can further understand the present invention, below enumerate especially several preferred embodiment of the present invention, and coordinate appended graphicly, describe the effect of constitution content of the present invention and desired realization in detail.
Principal character of the present invention is a kind of a kind of structure and its formation method, particularly GTG photomask that is suitable for excimer laser ablating technics that proposes GTG photomask.The alleged excimer laser ablating technics of the present invention, a kind of Direct Laser ablation (laser direct ablation, LDA) technique, refer to excimer laser (as the excimer laser of KrF) and directly carry out as techniques such as boring, patternings on the substrate of semiconductor base, glass substrate, circuit board or other kind, to form various laser, form embedding circuit (laser embedded circuit).
Please refer to Fig. 2 to Fig. 5, be depicted as a kind of step schematic diagram of making GTG photomask of the present invention, wherein Fig. 2 to Fig. 4 is diagrammatic cross-section, and Fig. 5 is the floor map of GTG photomask.As shown in Figure 2, first provide a substrate 300 and a photomask 302.On the surface of substrate 300, can there is any material that is suitable as excimer laser ablation, for example ABF (Ajinomoto Build-up Film), benzocyclobutene (benzocyclobutene, BCB), polymerizable liquid crystal molecule thing (liquid crystal polymer, LCP), pi (polyimide, PI), poly-phenolic ether (polyphenylene ether, PPE), teflon (polytetrafluoroethylene, PTFE) sensitization or the non-sensitization organic resin such as, or also can mix the materials such as various epoxy resin and glass fibre.In the preferred embodiment of the present invention, the lip-deep material of substrate 300 is ABF, and it can obtain preferred ablation effect.On photomask 302, include one first pattern 304, one second pattern 306 and one the 3rd pattern 308, it sequentially has one first live width w1, one second live width w2 and one the 3rd live width w3.In an embodiment of the present invention, the first pattern 304 is the patterns on fine rule road, and its first live width w1 between 3 microns (μ m) are to 8 microns, for example, is 5 microns; The second pattern 306 has the pattern of middle circuit, and its second live width w2 between 8 microns to 40 microns, for example, is 15 microns; The 3rd pattern 308 has the pattern of thick circuit, and its 3rd live width w3 is greater than 40 microns, for example, be 150 microns.
As shown in Figure 3, utilize this photomask 302 to carry out a direct laser ablation process, make laser 316 on substrate 300 surfaces, carry out ablation through photomask 302 printing opacity places (i.e. the place of the first figure 304, second graph 306 and the 3rd figure 308), can in substrate 300, form one first irrigation canals and ditches 310, one second irrigation canals and ditches 312 and one the 3rd irrigation canals and ditches 314.Wherein, corresponding the first pattern 304 of the first irrigation canals and ditches 310 and there is corresponding the second pattern 306 of one first depth d 1, the second irrigation canals and ditches 312 and there are corresponding the 3rd patterns 308 of one second depth d 2, the three irrigation canals and ditches 314 and there is one the 3rd depth d 3.As mentioned before, the phenomenon that easily has the refraction angle limit while carrying out ablation due to the pattern on fine rule road, therefore the degree of depth producing can be in the pattern of circuit come shallow, for instance, the first irrigation canals and ditches 310 that produce by the first pattern 304, its degree of depth can be less than the second irrigation canals and ditches 312 that produce by the second pattern 306, i.e. d1 < d2.On the other hand, the phenomenon that easily has column of smoke effect while carrying out ablation due to the pattern of thick circuit, therefore the degree of depth producing can be in the pattern of circuit come shallow, the first irrigation canals and ditches 314 that produce by the 3rd pattern 308, its degree of depth can be less than the second irrigation canals and ditches 312 that produce by the second pattern 306, i.e. d3 < d2.Yet the first depth d 1 and the 3rd depth d 3 magnitude relationship are to each other not necessarily.Below for convenience of description, it is example that the 3rd depth d 3 of take is greater than the first depth d 1, i.e. d1 < d3 < d2.The first depth d 1 is for example 8 microns, and the second depth d 2 is for example 16 microns, and the 3rd depth d 3 is for example 12 microns.
As shown in Fig. 4 and Fig. 5, according to the relation between the first depth d 1, the second depth d 2 and the 3rd depth d 3, form a GTG photomask 320a.The figure that GTG photomask 320a and photomask 302 have is roughly the same, namely has equally the first figure 304, second graph 306 and the 3rd figure 308, but specifically, these figures wherein at least one is to have GTG density.The GTG density of the present embodiment is to decide by the relation between the first depth d 1, the second depth d 2 and the 3rd depth d 3.In an embodiment of the invention, GTG density is to decide with following formula:
GTG density=(1-predetermined depth/measured depth)
For instance, in the present embodiment, be that to take the second the darkest depth d 2 be predetermined depth, then calculate the GTG density of other figure.For example the expectation transmittance of second graph 306 is d1/d2, i.e. 8/16=0.5, and obtain 1-0.5=0.5, i.e. 50% GTG density.In like manner, the expectation transmittance of the 3rd figure 308 is d1/d3, i.e. 8/12=0.75, and obtain 1-0.75=0.25, i.e. 25% GTG density.The first figure 304 maintains 100% transmittance, i.e. 0% GTG density.Thus, laser 316 only has 50% intensity after by second graph 306, and laser 316 only has 75% intensity after by the 3rd figure 308.Finally, as shown in Figure 4, can utilize this GTG photomask 320a to carry out equally another Direct Laser ablating technics, can in the substrate 300 of same material, form one the 4th irrigation canals and ditches 310a, one the 5th irrigation canals and ditches 312a and one the 6th irrigation canals and ditches 314a, corresponding the first pattern 304 of the 4th irrigation canals and ditches 310a, corresponding the second pattern 306 of the 5th irrigation canals and ditches 312a, corresponding the 3rd pattern 308 of the 6th irrigation canals and ditches 314a, and the 4th irrigation canals and ditches 310a, the 5th irrigation canals and ditches 312a are identical with the trench depth of the 6th irrigation canals and ditches 314a, be all d1.By aforesaid step, can effectively get rid of column of smoke effect, the refraction angle limit, or the impact of other factors, even if graph line is wide on photomask, vary in size, also can in substrate, form the pattern that the degree of depth is identical.
Please refer to Fig. 6, be depicted as according to the schematic diagram of GTG photomask in another embodiment of the present invention.As shown in Figure 6, previous embodiment is that to take the first depth d 1 be predetermined depth, in other embodiments, also can select an expectation depth d that is less than the first depth d 1 ' be benchmark, for example desired depth d ' is 4 microns.In like manner, the GTG density of the first figure 304 is 1-4/8,25%; The GTG density of second graph 306 is 1-4/16,75%; The 3rd figure 308 rank density are 1-4/12,67%, and form for example GTG photomask 312b of Fig. 6.Same, utilize this GTG photomask 320b can form the 7th irrigation canals and ditches 310b, the 8th irrigation canals and ditches 312b and the 9th irrigation canals and ditches 314b, and three's trench depth is all d '.
Please refer to Fig. 7, be depicted as in further embodiment of this invention and utilize GTG photomask to form the step schematic diagram of irrigation canals and ditches.Previous embodiment is to select a predetermined depth and the irrigation canals and ditches that make to form all have the identical degree of depth.And in the present embodiment, also can make the irrigation canals and ditches that form there is separately the different degree of depth.For example, while forming corresponding the first pattern 304 of 1 the tenth irrigation canals and ditches 310c in another substrate if wish, the predetermined depth of supposing the tenth irrigation canals and ditches 310c is d10, and the GTG density of the first figure 304 on GTG photomask 320c is 1-(d10/d1); If the predetermined depth of the 11 irrigation canals and ditches 312c is d11, the GTG density of the second graph 304 on GTG photomask 320c is 1-(d11/d1); If the predetermined depth of the 12 irrigation canals and ditches 314c is d12, the GTG density of the 3rd figure 308 on GTG photomask 320c is 1-(d12/d1).Then, by this GTG photomask 320c, can in another substrate, via direct ablating technics, form the tenth irrigation canals and ditches 310c with the d10 degree of depth, there is the 11 irrigation canals and ditches 312c of the d11 degree of depth, and the 12 irrigation canals and ditches 314c with the d12 degree of depth.
It should be noted that GTG photomask 320a of the present invention, 320b, 320c is also different from known technology with different-thickness or with unlike material, forms the GTG photomask in different transmittances region.As shown in Figure 5, excimer laser GTG photomask 320a of the present invention includes a transparency carrier 321 and light-proof material 323 disposed thereon.Region beyond the first figure 304, second graph 306 and the 3rd figure 308, substrate 321 is covered by light-proof material 323 completely, and in the first figure 304, second graph 306 and the 3rd figure 308, be to be evenly distributed with light tight site 322, wherein the ratio of whole light tight sites 322 areas and figure has determined the transmittance of figure.For instance, in the 3rd figure 308, as shown in half magnification region as right in Fig. 5,322 places, site are completely light tight, other region beyond the 3rd pattern 308Zhong site 322 is 100% printing opacity, and all site 322 shared area in the 3rd pattern 308 is 25%.By changing the density of site 322 on photomask, can change the transmittance of zones of different on photomask.In the preferred embodiments of the present invention, transparency carrier 321 can comprise inorganic material or the organic material of various printing opacities, the for example combination of glass, quartz, plastics, resin, acryl, other suitable material or previous materials, but be not limited to this, form the light-proof material 323 of site 322 such as being the materials such as crome metal, lighttight resin or graphite.Site 322 can comprise any simple geometric configuration, for example circle, rectangle, rhombus or above-mentioned combination.The method that forms site 322 for example can be used photoetching and etch process (photo-etching-process, PEP) technique, ink-jet application (ink jet printing) technique or laser technology etc., can be also that other is applicable to for forming the technique of photomask.
In another embodiment of the present invention, the present invention forms excimer laser GTG photomask 320a, 320b, and the method for 320c can also comprise a separate regression steps.Please refer to Fig. 8, be depicted as the presentation graphs of separate regression steps of the present invention.As shown in Figure 8, if the too much and formed trench depth of the figure on photomask 302 cannot measure one by one, can only select the figure of several different live widths to measure.For instance, can select 5 or 5 above figures, measure the trench depth after ablation, take x axle as width, take y axle as ablation depth, and obtain the distribution as Fig. 8.Then for example these data are carried out a recurrence (regression) step, and can obtain is for example the curvilinear regression of second degree line (y=ax2+bx+c) that Open Side Down.Follow-up at design excimer laser GTG photomask 320a, 320b, during the GTG density of 320c, can utilize this equation to ask to obtain a compute depth of different live width figures, and as mentioned before, and a selected predetermined depth is as benchmark, and coordinates formula:
GTG density=(1-predetermined depth/measured depth)
The GTG density of different graphic can be tried to achieve, thus, the time of large amount measurement trench depth can be omitted.
Must be noted that in addition excimer laser GTG photomask of the present invention is particularly used in the Patternized technique of excimer laser, for example, be the Patternized technique of KrF excimer laser (248nm).On the photomask of other type, because not being passes the direct ablation substrate of photomask with laser light, therefore do not have the problem of the refraction angle limit and column of smoke effect, its principle and embodiment and the present invention are not identical.
In sum, the excimer laser GTG photomask that the present invention carries and its formation method, be to form by measurement the compensation that trench depth carries out GTG figure, can effectively get rid of column of smoke effect or the refraction angle limit, or even the impact of other factors.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (15)
1. a GTG photomask, is characterized in that, comprises:
One first pattern, has one first live width; And
One second pattern, has one second live width, and wherein this second pattern has a GTG density.
2. GTG photomask according to claim 1, is characterized in that this second pattern is coated with a plurality of sites equably.
3. GTG photomask according to claim 2, is characterized in that, these sites comprise light tight material.
4. GTG photomask according to claim 1, is characterized in that, the transmittance of this second pattern is less than 100%.
5. GTG photomask according to claim 1, is characterized in that, this first live width is not equal to this second live width.
6. in substrate, form a method for irrigation canals and ditches, it is characterized in that, comprise:
To carry out a direct ablating technics according to this GTG photomask described in claim 1 to 5 any one, to form one the 4th irrigation canals and ditches to should the first figure in a substrate, and one the 5th irrigation canals and ditches to should second graph, wherein the degree of depth of the 4th irrigation canals and ditches and the 5th irrigation canals and ditches is identical.
7. in substrate, form a method for irrigation canals and ditches, it is characterized in that, comprise:
To carry out a direct ablating technics according to this GTG photomask described in claim 1 to 5 any one, to form 1 the tenth irrigation canals and ditches to should the first figure in a substrate, and 1 the 11 irrigation canals and ditches to should second graph, wherein the degree of depth of the tenth irrigation canals and ditches and the 11 irrigation canals and ditches is different.
8. a method for making for GTG photomask, is characterized in that, comprises:
One substrate is provided;
One photomask is provided, and this photomask has one first figure and has one first live width, and a second graph has one second live width;
With this photomask, carry out a direct laser ablation process, to form one the firstth irrigation canals and ditches to should the first figure and have one first degree of depth in this substrate, and one second irrigation canals and ditches are to should second graph and have one second degree of depth; And
Form a GTG photomask, this GTG photomask has this first figure and this second graph, and wherein this second graph has one second GTG density.
9. the method for making of GTG photomask according to claim 8, is characterized in that, this second GTG density=(1-mono-second predetermined depth/this second degree of depth).
10. the method for making of GTG photomask according to claim 9, is characterized in that, this first figure of this GTG photomask has one first GTG density, and this first GTG density=(1-mono-first predetermined depth/this first degree of depth).
The method for making of 11. GTG photomasks according to claim 8, is characterized in that, also comprises separate regression steps.
12. 1 kinds of methods that form irrigation canals and ditches in substrate, is characterized in that, comprise:
Method for making with GTG photomask as claimed in claim 10 forms this GTG photomask; And carry out another Direct Laser ablating technics with this GTG photomask, to form one the 4th irrigation canals and ditches to should the first figure in another substrate, and one the 5th irrigation canals and ditches are to should second graph.
13. methods that form irrigation canals and ditches in substrate according to claim 12, is characterized in that, this first predetermined depth equals this second predetermined depth.
14. methods that form irrigation canals and ditches in substrate according to claim 13, is characterized in that, this first predetermined depth equals this second predetermined depth and equals this first degree of depth.
15. methods that form irrigation canals and ditches in substrate according to claim 10, is characterized in that, this first predetermined depth is not equal to this second predetermined depth.
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| CN201210204320.XA CN103513508B (en) | 2012-06-20 | 2012-06-20 | Gray-scale photomask forms irrigation canals and ditches method with manufacture method and with gray-scale photomask |
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| CN201210204320.XA CN103513508B (en) | 2012-06-20 | 2012-06-20 | Gray-scale photomask forms irrigation canals and ditches method with manufacture method and with gray-scale photomask |
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| US20220146926A1 (en) * | 2020-11-12 | 2022-05-12 | United Microelectronics Corp. | Photo-mask and semiconductor process |
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| CN103513508B (en) | 2016-08-10 |
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