CN103512060A - Microwave radiation unit of semiconductor microwave oven - Google Patents
Microwave radiation unit of semiconductor microwave oven Download PDFInfo
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- CN103512060A CN103512060A CN201310419283.9A CN201310419283A CN103512060A CN 103512060 A CN103512060 A CN 103512060A CN 201310419283 A CN201310419283 A CN 201310419283A CN 103512060 A CN103512060 A CN 103512060A
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- microwave
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- metal probe
- microwave oven
- furnace chamber
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Abstract
The invention relates to a microwave radiation unit of a semiconductor microwave oven, which comprises a ceramic ring and a metal probe passing through the ceramic ring. The inner end of the metal probe extends into a chamber of the microwave oven, and an adapter is arranged at the outer end of the metal probe and connected with a semiconductor excitation source. The microwave radiation unit is fixed at the bottom of the chamber, and the metal probe is separated from a bottom plate of the chamber through the ceramic ring. By adopting the metal probe which extends directly into the chamber, the energy radiation of the semiconductor excitation source is maximally introduced into the chamber of the microwave oven. The microwave radiation unit provided by the invention can bear high power and resist high temperature, has good voltage standing wave ratio and high radiation efficiency, saves energy and is environment-friendly.
Description
Technical field
The present invention relates to semiconductor microwave oven, specifically a kind of microwave unit of semiconductor microwave oven.
Background technology
Micro-wave oven is a kind of cooking of the modernization with microwave heating of food kitchen range.At present, common micro-wave oven is microwave magnetron stove, power supply, magnetron, control circuit and cooking cavity etc., partly consists of.Power supply provides about 4000 volts of high pressure to magnetron, and magnetron, under power supply excitation, produces continuously microwave, then passes through Wave guide system, be coupled in cooking cavity, thus heat food.This microwave magnetron stove need to adopt 4000 volts of high voltage sourcies, Electrical Safety outstanding problem, and its complex structure, cost of manufacture are high, and the manufacture difficulty of magnetron is larger, has limited the universal of micro-wave oven.
At present, semiconductor microactuator wave technology is more and more ripe, and cost is more and more lower, and because semiconductor microwave adopts low-tension supply, security is good.Semiconductor microactuator wave technology is applied to the developing direction that micro-wave oven is micro-wave oven, but in prior art, lacks this application.
Summary of the invention
The present invention is directed to the problems referred to above, a kind of microwave unit that is applied to semiconductor microwave oven is provided, this microwave unit has good heating effect.
According to technical scheme of the present invention: a kind of microwave unit of semiconductor microwave oven, comprise porcelain ring and through the metal probe of described porcelain ring, the furnace chamber ，Qi outer end that micro-wave oven is stretched in the inner of described metal probe is provided with the joint that connects semiconductor driving source.
Described joint adopts the radio frequency N shape joint of standard.
The longitudinal section of described metal probe is L shaped.
Described microwave unit is fixed on the bottom of described furnace chamber, and described metal probe separates by the base plate of described porcelain ring and described furnace chamber.
The top of described microwave unit is provided with ceramic dielectric dividing plate, and described ceramic dielectric dividing plate is fixed on the furnace wall of described furnace chamber.
Described furnace chamber is cylindrical cavity.
Technique effect of the present invention is: the present invention adopts the metal probe that directly stretches into furnace chamber, can be by the energy maximization eradiation of semiconductor driving source in micro-wave oven furnace chamber; The present invention is simple in structure, can bear high-powerly, high temperature resistant, and has good standing-wave ratio, and radiation efficiency is high, energy-conserving and environment-protective.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is the A-A cutaway view in Fig. 1.
The specific embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described.
In Fig. 1, Fig. 2, comprise furnace chamber 1, ceramic dielectric dividing plate 2, furnace wall 3, base plate 4, metal probe 5, porcelain ring 6, joint 7 etc.
As shown in Figure 1 and Figure 2, the present invention is a kind of microwave unit that is applied to semiconductor microwave oven.This semiconductor microwave oven comprises the furnace chamber 1 consisting of furnace wall 3 and base plate 4, and furnace chamber 1 preferably adopts the cylindrical cavity of convenient suitable use.
Microwave cellular installation is on furnace chamber 1, and it comprises porcelain ring 6 and through the metal probe 5 of porcelain ring 6, the furnace chamber 1 ，Qi outer end that micro-wave oven is stretched in the inner of metal probe 5 is provided with the joint 7 that connects semiconductor driving source.The longitudinal section of metal probe 5 is L shaped, and joint 7 adopts the radio frequency N shape joint of standard.
Microwave unit is preferably arranged on the bottom of furnace chamber 1, and now, metal probe 5 separates by porcelain ring 6 and the base plate 4 of furnace chamber 1.
Above microwave unit, be provided with ceramic dielectric dividing plate 2, ceramic dielectric dividing plate 2 is fixed on the furnace wall 3 of furnace chamber 1.Ceramic dielectric dividing plate 2 mainly plays load-bearing heat food, and the microwave energy of microwave unit output is heated on food through acting on after ceramic dielectric dividing plate 2, plays microwave heating action.
The present invention adopts the metal probe 5 that directly stretches into furnace chamber 1, can be by the energy maximization eradiation of semiconductor driving source in micro-wave oven furnace chamber 1; The present invention is simple in structure, can bear high-powerly, high temperature resistant, and has good standing-wave ratio, and radiation efficiency is high, energy-conserving and environment-protective; The present invention is arranged on the bottom of furnace chamber 1, is placed on the bottom that is heated food, and Energy distribution is very concentrated, can well energy be passed to and be heated food, has good heating effect.
Claims (6)
1. the microwave unit of a semiconductor microwave oven, it is characterized in that: comprise porcelain ring (6) and through the metal probe (5) of described porcelain ring (6), furnace chamber (1) the ，Qi outer end that micro-wave oven is stretched in the inner of described metal probe (5) is provided with the joint (7) that connects semiconductor driving source.
2. according to the microwave unit of semiconductor microwave oven claimed in claim 1, it is characterized in that: described joint (7) adopts the radio frequency N shape joint of standard.
3. according to the microwave unit of semiconductor microwave oven claimed in claim 1, it is characterized in that: the longitudinal section of described metal probe (5) is L shaped.
4. according to the microwave unit of semiconductor microwave oven claimed in claim 1, it is characterized in that: described microwave unit is fixed on the bottom of described furnace chamber (1), described metal probe (5) separates by described porcelain ring (6) and the base plate (4) of described furnace chamber (1).
5. according to the microwave unit of semiconductor microwave oven claimed in claim 4, it is characterized in that: the top of described microwave unit is provided with ceramic dielectric dividing plate (2), described ceramic dielectric dividing plate (2) is fixed on the furnace wall (3) of described furnace chamber (1).
6. according to the microwave unit of semiconductor microwave oven claimed in claim 1, it is characterized in that: described furnace chamber (1) is cylindrical cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310419283.9A CN103512060A (en) | 2013-09-13 | 2013-09-13 | Microwave radiation unit of semiconductor microwave oven |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310419283.9A CN103512060A (en) | 2013-09-13 | 2013-09-13 | Microwave radiation unit of semiconductor microwave oven |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103512060A true CN103512060A (en) | 2014-01-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310419283.9A Pending CN103512060A (en) | 2013-09-13 | 2013-09-13 | Microwave radiation unit of semiconductor microwave oven |
Country Status (1)
| Country | Link |
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| CN (1) | CN103512060A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3121519A4 (en) * | 2014-03-20 | 2017-12-27 | Guangdong Midea Kitchen Appliances Manufacturing Co., Ltd. | Connection structure and input/output connection structure of semiconductor microwave generator for microwave oven, and microwave oven |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4316069A (en) * | 1979-12-03 | 1982-02-16 | General Electric Company | Microwave oven excitation system |
| CN1212349A (en) * | 1997-09-23 | 1999-03-31 | 三星电子株式会社 | Microwave dispersing apparatus of microwave oven |
| CN1434664A (en) * | 2001-11-27 | 2003-08-06 | 三星电子株式会社 | Microwave oven with wave distributing device |
| CN1657833A (en) * | 2004-02-19 | 2005-08-24 | Lg电子株式会社 | Microwave oven |
| CN102374557A (en) * | 2011-10-31 | 2012-03-14 | 广东美的微波电器制造有限公司 | Microwave feeding structure of semiconductor microwave oven |
-
2013
- 2013-09-13 CN CN201310419283.9A patent/CN103512060A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4316069A (en) * | 1979-12-03 | 1982-02-16 | General Electric Company | Microwave oven excitation system |
| CN1212349A (en) * | 1997-09-23 | 1999-03-31 | 三星电子株式会社 | Microwave dispersing apparatus of microwave oven |
| CN1434664A (en) * | 2001-11-27 | 2003-08-06 | 三星电子株式会社 | Microwave oven with wave distributing device |
| CN1657833A (en) * | 2004-02-19 | 2005-08-24 | Lg电子株式会社 | Microwave oven |
| CN102374557A (en) * | 2011-10-31 | 2012-03-14 | 广东美的微波电器制造有限公司 | Microwave feeding structure of semiconductor microwave oven |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3121519A4 (en) * | 2014-03-20 | 2017-12-27 | Guangdong Midea Kitchen Appliances Manufacturing Co., Ltd. | Connection structure and input/output connection structure of semiconductor microwave generator for microwave oven, and microwave oven |
| US10575373B2 (en) | 2014-03-20 | 2020-02-25 | Guangdong Midea Kitchen Appliances Manufacturing Co., Ltd. | Connection structure and input/output connection structure of semiconductor microwave generator for microwave oven, and microwave oven |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140115 |
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| RJ01 | Rejection of invention patent application after publication |