CN103500775A - Process for conducting alkali treatment after felting on crystalline silicon plasma - Google Patents
Process for conducting alkali treatment after felting on crystalline silicon plasma Download PDFInfo
- Publication number
- CN103500775A CN103500775A CN201310439707.8A CN201310439707A CN103500775A CN 103500775 A CN103500775 A CN 103500775A CN 201310439707 A CN201310439707 A CN 201310439707A CN 103500775 A CN103500775 A CN 103500775A
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- China
- Prior art keywords
- crystalline silicon
- alkali
- felting
- silicon plasma
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003513 alkali Substances 0.000 title claims abstract description 27
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000009950 felting Methods 0.000 title abstract 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 21
- 239000003518 caustics Substances 0.000 claims abstract description 21
- 238000005260 corrosion Methods 0.000 claims abstract description 12
- 230000007797 corrosion Effects 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 235000008216 herbs Nutrition 0.000 claims description 18
- 210000002268 wool Anatomy 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000000126 substance Substances 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 2
- 239000004744 fabric Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000009941 weaving Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Treatment Of Fiber Materials (AREA)
Abstract
The invention discloses a process for conducting alkali treatment after felting on crystalline silicon plasma. Alkali corrosion cleaning is carried out on the crystalline silicon plasma through mixed liquid of a corrosive agent and water after the crystalline silicon plasma is felted. The corrosive agent is KOH or NaOH liquid-state alkali. The concentration of the KOH or the NaOH is 20%. The concentration of the mixed liquid of the corrosive agent and the water is 1.9%-2.3%. The temperature of the alkali corrosion cleaning is 28DEG C-32DEG C, and the time of the alkali corrosion cleaning is 40s-60s. According to the process for conducting alkali treatment after felting on the crystalline silicon plasma, after the alkali corrosion cleaning process is adopted to process the surface of a silicon wafer after the silicon wafer is felted, the included angle fabric surface bombarded by the existing plasma becomes smooth, meanwhile, the terrific light trapping effect is kept, the process can be used for an online chemical method felting device, the device is not required to be reconstructed, the automatic production mode of a felting machine is completely achieved, the production efficiency is improved, and battery pieces Isc, Rsh, Iver2 and EFF are obviously improved.
Description
Technical field
The present invention relates to a kind of alkali pretreatment, relate in particular to alkali pretreatment after the making herbs into wool of a kind of crystalline silicon plasma.
Background technology
Along with the photovoltaic industry fast development, raising for battery conversion efficiency seems particularly important, because monocrystalline silicon material cost is high, therefore, industry is still taken as the leading factor with polycrystal silicon cell, but on matte is processed, mainly contain chemical method and Physical two classes, mostly mainly still with chemical method, complete, increase the absorption of light by densely distributed corrosion pit, reflectivity can be accomplished the 25%-28% left and right to greatest extent, Physical can be on the basis of chemical method matte, be etched into " the pyramidion shape of point point " in etch pit inside, reduced greatly reflection of light, generally can reach 8% left and right, but in the situation that after Physical making herbs into wool, for the porous silicon produced in the pre-treatment of Physical etching, be difficult to remove, cause cell piece Iver2 very big, Rsh is had a strong impact on, the EL scanning result shows the clear zone, many places.
Summary of the invention
Technical problem to be solved by this invention is, alkali pretreatment after a kind of crystalline silicon plasma making herbs into wool that can make cell piece Isc, Rsh, Iver2 and EFF improve is provided.
In order to solve the problems of the technologies described above, the present invention is achieved by the following technical solutions: alkali pretreatment after the making herbs into wool of a kind of crystalline silicon plasma, the mixed liquor by the crystalline silicon plasma after making herbs into wool by corrosive agent and water carries out the caustic corrosion cleaning.
Preferably, described corrosive agent is the liquid alkali of KOH or NaOH.
Preferably, the concentration of described KOH or NaOH is 20%.
Preferably, the mixed liquid concentration of described corrosive agent and water is 1.9%～2.3%.
Preferably, the temperature that described caustic corrosion is cleaned is 28 ℃～32 ℃, and the time is 40s～60s.
Compared with prior art, usefulness of the present invention is: after after the making herbs into wool of this crystalline silicon plasma, the silicon chip surface of alkali pretreatment after to making herbs into wool adopts the alkali clean process, make the angle matte of plasma bombardment originally become round and smooth, simultaneously, keep splendid sunken light effect; The chemical method etching device is used online, and equipment does not need transformation, realizes wool-weaving machine automated production pattern fully, has improved production efficiency; Cell piece Isc, Rsh, Iver2 and EFF are obviously improved.
embodiment:
Below by embodiment, describe the present invention.
Alkali pretreatment after the making herbs into wool of a kind of crystalline silicon plasma, the mixed liquor by the crystalline silicon plasma after making herbs into wool by corrosive agent and water carries out the caustic corrosion cleaning; Described corrosive agent is KOH or the liquid alkali of NaOH that concentration is 20%; The mixed liquid concentration of corrosive agent and water is 1.9%～2.3%; The temperature that caustic corrosion is cleaned is 28 ℃～32 ℃, and the time is 40s～60s.
But, when production capacity is nervous, the mixed liquid concentration of corrosive agent and water can be transferred to 3%, about time 15s, or the caustic corrosion scavenging period is in the 90s left and right, and the mixed liquid concentration of corrosive agent and water can be down to 1.5%, perhaps alkali cleaning temperature is 25 ℃ ± 2, the concentration of alkali cleaning can be brought up to 5%-7%, and time 40s-60s all can reach identical effect.
After after the making herbs into wool of this crystalline silicon plasma, the silicon chip surface of alkali pretreatment after to making herbs into wool adopts the alkali clean process, make the angle matte of plasma bombardment originally become round and smooth, simultaneously, keep splendid sunken light effect; The chemical method etching device is used online, and equipment does not need transformation, realizes wool-weaving machine automated production pattern fully, has improved production efficiency; Voc after improvement has improved 30mv, and Isc has improved 120mA, and EFF has improved 1%, Iver2 and reduced 0.41A, and EFF has improved 0.5%.
It is emphasized that: above is only preferred embodiment of the present invention, not the present invention is done to any pro forma restriction, any simple modification, equivalent variations and modification that every foundation technical spirit of the present invention is done above embodiment, all still belong in the scope of technical solution of the present invention.
Claims (5)
1. alkali pretreatment after crystalline silicon plasma making herbs into wool, is characterized in that, the mixed liquor by the crystalline silicon plasma after making herbs into wool by corrosive agent and water carries out the caustic corrosion cleaning.
2. alkali pretreatment after crystalline silicon plasma according to claim 1 making herbs into wool, is characterized in that, described corrosive agent is the liquid alkali of KOH or NaOH.
3. alkali pretreatment after crystalline silicon plasma according to claim 2 making herbs into wool, is characterized in that, the concentration of described KOH or NaOH is 20%.
4. alkali pretreatment after crystalline silicon plasma according to claim 1 making herbs into wool, is characterized in that, the mixed liquid concentration of described corrosive agent and water is 1.9%～2.3%.
5. crystalline silicon plasma making herbs into wool consequent treatment process according to claim 1, is characterized in that, the temperature that described caustic corrosion is cleaned is 28 ℃～32 ℃, and the time is 40s～60s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310439707.8A CN103500775A (en) | 2013-09-25 | 2013-09-25 | Process for conducting alkali treatment after felting on crystalline silicon plasma |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310439707.8A CN103500775A (en) | 2013-09-25 | 2013-09-25 | Process for conducting alkali treatment after felting on crystalline silicon plasma |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103500775A true CN103500775A (en) | 2014-01-08 |
Family
ID=49865962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310439707.8A Pending CN103500775A (en) | 2013-09-25 | 2013-09-25 | Process for conducting alkali treatment after felting on crystalline silicon plasma |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103500775A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108831936A (en) * | 2018-05-29 | 2018-11-16 | 华侨大学 | Light trapping structure glue and smooth flannelette crystalline silicon composite battery and its processing method |
| CN109087853A (en) * | 2018-07-03 | 2018-12-25 | 昆明理工大学 | A kind of method of the copper catalysis etching round and smooth processing of making herbs into wool silicon chip surface |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102140697A (en) * | 2010-12-28 | 2011-08-03 | 中国科学院微电子研究所 | Manufacturing method based on porous pyramid structure on monocrystalline silicon substrate |
| CN102623546A (en) * | 2011-01-30 | 2012-08-01 | 无锡尚德太阳能电力有限公司 | Silicon chip texturing method and solar cell manufactured through using the method |
| CN102820370A (en) * | 2011-06-08 | 2012-12-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Texture surface making treatment method for silicon wafer |
-
2013
- 2013-09-25 CN CN201310439707.8A patent/CN103500775A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102140697A (en) * | 2010-12-28 | 2011-08-03 | 中国科学院微电子研究所 | Manufacturing method based on porous pyramid structure on monocrystalline silicon substrate |
| CN102623546A (en) * | 2011-01-30 | 2012-08-01 | 无锡尚德太阳能电力有限公司 | Silicon chip texturing method and solar cell manufactured through using the method |
| CN102820370A (en) * | 2011-06-08 | 2012-12-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Texture surface making treatment method for silicon wafer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108831936A (en) * | 2018-05-29 | 2018-11-16 | 华侨大学 | Light trapping structure glue and smooth flannelette crystalline silicon composite battery and its processing method |
| CN109087853A (en) * | 2018-07-03 | 2018-12-25 | 昆明理工大学 | A kind of method of the copper catalysis etching round and smooth processing of making herbs into wool silicon chip surface |
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| C06 | Publication | ||
| PB01 | Publication | ||
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| WD01 | Invention patent application deemed withdrawn after publication | ||
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Application publication date: 20140108 |