CN103490388A - Over-voltage and under-voltage protection circuit - Google Patents
Over-voltage and under-voltage protection circuit Download PDFInfo
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- CN103490388A CN103490388A CN201310469788.6A CN201310469788A CN103490388A CN 103490388 A CN103490388 A CN 103490388A CN 201310469788 A CN201310469788 A CN 201310469788A CN 103490388 A CN103490388 A CN 103490388A
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Abstract
The invention discloses an over-voltage and under-voltage protection circuit. The over-voltage and under-voltage protection circuit comprises an under-voltage protection circuit, an over-voltage protection circuit and an output control circuit, wherein the under-voltage protection circuit, the over-voltage protection circuit and the output control circuit are connected to a power circuit. The under-voltage protection circuit is composed of a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a capacitor C1, a capacitor C2, a voltage stabilizing diode DZ1, a voltage stabilizing diode DZ2, a triode Q1 and a triode Q2. The over-voltage protection circuit is composed of a resistor R6, a resistor R7, a resistor R8, a resistor R9, a resistor R10, a capacitor C3, a capacitor C4, a voltage stabilizing diode DZ3, a voltage stabilizing diode DZ4, a voltage stabilizing diode DZ5, a triode Q3 and a triode Q4. The output control circuit is composed of a resistor R11, a capacitor C5, an MOS transistor Q5 and a diode D1. According to the over-voltage and under-voltage protection circuit, due to the fact that passive elements are adopted, over-voltage and under-voltage protection of a power supply is achieved, power consumption is low, and the response speed is high.
Description
Technical field
The present invention relates to a kind of electronic circuit, specifically a kind of overvoltage and under-voltage protecting circuit, belong to supply voltage switch resist technology field.
Background technology
When the supply power voltage of Switching Power Supply lower than or during higher than the normal working voltage certain value, all may cause power supply to work and even damage.In order to address the above problem, people have designed overvoltage, under-voltage protecting circuit, and overvoltage and under-voltage protecting circuit commonly used is to power to control by another accessory power supply the purpose that its break-make reaches protection with relay at present.The relay reaction speed is slow, and need to provide in addition a power supply to come, to the relay power supply, so not only cause power consumption to increase, and the protection of accessory power supply to be also a problem.
Summary of the invention
For above-mentioned deficiency, the invention provides a kind of overvoltage and under-voltage protecting circuit, it not only can carry out overvoltage, under-voltage protection to power supply, and consumes low in energy consumption.
The technical solution adopted for the present invention to solve the technical problems is: a kind of overvoltage and under-voltage protecting circuit, comprise the under-voltage protecting circuit be connected in power circuit, overvoltage crowbar and output control circuit, it is characterized in that, described under-voltage protecting circuit is by resistance R 1, resistance R 2, resistance R 3, resistance R 4, resistance R 5, capacitor C 1, capacitor C 2, voltage stabilizing didoe DZ1, voltage stabilizing didoe DZ2, triode Q1 and triode Q2 form, described overvoltage crowbar is by resistance R 6, resistance R 7, resistance R 8, resistance R 9, resistance R 10, capacitor C 3, capacitor C 4, voltage stabilizing didoe DZ3, voltage stabilizing didoe DZ4, voltage stabilizing didoe DZ5, triode Q3 and triode Q4 form, described output control circuit is by resistance R 11, capacitor C 5, transistor Q5 and diode D1 form,
Wherein, resistance R 1, resistance R 2, resistance R 3, resistance R 6, one end of resistance R 7 and resistance R 8 is connected with the positive pole of power circuit, an end of the other end of described resistance R 1 and resistance R 4, one end of resistance R 5, one end of the negative pole of voltage stabilizing didoe DZ2 and capacitor C 2 is connected, and the positive pole of described voltage stabilizing didoe DZ2 is connected with the base stage of triode Q2 with an end of capacitor C 1, the other end of the other end of described resistance R 2 and capacitor C 1, the collector electrode of triode Q2 is connected with the negative pole of voltage stabilizing didoe DZ1, the other end of the other end of described resistance R 3 and resistance R 4, the collector electrode of triode Q1 is connected with the grid of transistor Q5, and the base stage of described triode Q1 is connected with the positive pole of voltage stabilizing didoe DZ1, the other end of the emitter of described triode Q1 and capacitor C 2, the other end of resistance R 5, the emitter of triode Q2, one end of the source electrode of transistor Q5 and capacitor C 5 is connected and ground connection, an end of the other end of described resistance R 6 and resistance R 9, one end of resistance R 10, one end of the negative pole of voltage stabilizing didoe DZ4 and capacitor C 4 is connected, and the positive pole of described voltage stabilizing didoe DZ4 is connected with the base stage of triode Q4 with an end of capacitor C 3, the other end of the other end of described resistance R 7 and capacitor C 3, the collector electrode of triode Q4, the negative pole of voltage stabilizing didoe DZ3 is connected with the grid of transistor Q5, the other end of the other end of described resistance R 8 and resistance R 9, the collector electrode of triode Q3 is connected with the negative pole of voltage stabilizing didoe DZ5, and the base stage of described triode Q3 is connected with the positive pole of voltage stabilizing didoe DZ3, the other end of the emitter of described triode Q3 and capacitor C 4, the other end of resistance R 10, the emitter of triode Q4, the positive pole of voltage stabilizing didoe DZ5 is connected with the power circuit input cathode and ground connection, the other end of described capacitor C 5 is connected with the negative pole of diode D1 with an end of resistance R 11, and the drain electrode of described transistor Q5 is connected with the power circuit output end negative pole with the other end of resistance R 11 and the positive pole of diode D1.
Preferably, described triode Q1, triode Q2, triode Q3 and triode Q4 all adopt NPN type triode.
Preferably, described transistor Q5 adopts the N-type MOS transistor.
The present invention has following outstanding beneficial effect: after adopting said structure; overvoltage of the present invention and under-voltage protecting circuit have adopted passive device; without external power source; drawing atomic little electric current from the input of power circuit can be self circuit and is powered; it not only can carry out overvoltage and under-voltage protection to power supply, and consume low in energy consumption, reaction speed is fast.
The accompanying drawing explanation
Below in conjunction with accompanying drawing, the invention will be further described:
Fig. 1 is basic circuit diagram of the present invention.
Embodiment
As shown in Figure 1, a kind of overvoltage of the present invention and under-voltage protecting circuit, it comprises the under-voltage protecting circuit be connected in power circuit, overvoltage crowbar and output control circuit, described under-voltage protecting circuit is by resistance R 1, resistance R 2, resistance R 3, resistance R 4, resistance R 5, capacitor C 1, capacitor C 2, voltage stabilizing didoe DZ1, voltage stabilizing didoe DZ2, NPN type triode Q1 and NPN type triode Q2 form, described overvoltage crowbar is by resistance R 6, resistance R 7, resistance R 8, resistance R 9, resistance R 10, capacitor C 3, capacitor C 4, voltage stabilizing didoe DZ3, voltage stabilizing didoe DZ4, voltage stabilizing didoe DZ5, NPN type triode Q3 and NPN type triode Q4 form, described output control circuit is by resistance R 11, capacitor C 5, N-type MOS transistor Q5 and diode D1 form,
Wherein, resistance R 1, resistance R 2, resistance R 3, resistance R 6, one end of resistance R 7 and resistance R 8 is connected with the positive pole of power circuit, one end of the other end of described resistance R 1 and resistance R 4, one end of resistance R 5, one end of the negative pole of voltage stabilizing didoe DZ2 and capacitor C 2 is connected, the positive pole of described voltage stabilizing didoe DZ2 is connected with the base stage of NPN type triode Q2 with an end of capacitor C 1, the other end of the other end of described resistance R 2 and capacitor C 1, the collector electrode of NPN type triode Q2 is connected with the negative pole of voltage stabilizing didoe DZ1, the other end of the other end of described resistance R 3 and resistance R 4, the collector electrode of NPN type triode Q1 is connected with the grid of N-type MOS transistor Q5, the base stage of described NPN type triode Q1 is connected with the positive pole of voltage stabilizing didoe DZ1, the emitter of described NPN type triode Q1 and the other end of capacitor C 2, the other end of resistance R 5, the emitter of NPN type triode Q2, the source electrode of N-type MOS transistor Q5 is connected with an end of capacitor C 5 and ground connection, one end of the other end of described resistance R 6 and resistance R 9, one end of resistance R 10, one end of the negative pole of voltage stabilizing didoe DZ4 and capacitor C 4 is connected, the positive pole of described voltage stabilizing didoe DZ4 is connected with the base stage of NPN type triode Q4 with an end of capacitor C 3, the other end of the other end of described resistance R 7 and capacitor C 3, the collector electrode of NPN type triode Q4, the negative pole of voltage stabilizing didoe DZ3 is connected with the grid of N-type MOS transistor Q5, the other end of the other end of described resistance R 8 and resistance R 9, the collector electrode of NPN type triode Q3 is connected with the negative pole of voltage stabilizing didoe DZ5, the base stage of described NPN type triode Q3 is connected with the positive pole of voltage stabilizing didoe DZ3, the emitter of described NPN type triode Q3 and the other end of capacitor C 4, the other end of resistance R 10, the emitter of NPN type triode Q4, the positive pole of voltage stabilizing didoe DZ5 is connected with the power circuit input cathode and ground connection, the other end of described capacitor C 5 is connected with the negative pole of diode D1 with an end of resistance R 11, the drain electrode of described N-type MOS transistor Q5 is connected with the power circuit output end negative pole with the positive pole of the other end of resistance R 11 and diode D1.
After overvoltage of the present invention and under-voltage protecting circuit are connected on the rectifier of Switching Power Supply, before filter capacitor, comprise the late-class circuit of filter capacitor in order to protection.Under-voltage protection mechanism of the present invention is; if through the voltage of rectifier output during lower than set point; the collector potential of NPN type triode Q2 rises; be raised to the time marquis who makes NPN type triode Q1 conducting; the circuit state upset, Q1 is saturated for NPN type triode, by the grid potential of N-type MOS transistor Q5, moves to very low; N-type MOS transistor Q5 disconnects, and late-class circuit can not get power supply.This circuit is similar to Schmidt circuit, and certain return difference is arranged, so NPN type triode Q1 only can be operated in two states, and the one, saturation condition, the 2nd, complete off state, so just avoided N-type MOS transistor Q5 to be operated in the loss that non-on off state causes.Similarly, the mechanism of overvoltage crowbar of the present invention is, when the voltage through rectifier output, during higher than set point, the state of circuit overturns, and the collector potential of NPN type triode Q4 is dragged down, thereby shutoff N-type MOS transistor Q5 reaches the purpose of protection.
The above is the preferred embodiment of the present invention, for those skilled in the art, under the premise without departing from the principles of the invention, can also make some improvements and modifications, and these improvements and modifications also are regarded as protection scope of the present invention.
Claims (3)
1. an overvoltage and under-voltage protecting circuit, comprise the under-voltage protecting circuit be connected in power circuit, overvoltage crowbar and output control circuit, it is characterized in that, described under-voltage protecting circuit is by resistance R 1, resistance R 2, resistance R 3, resistance R 4, resistance R 5, capacitor C 1, capacitor C 2, voltage stabilizing didoe DZ1, voltage stabilizing didoe DZ2, triode Q1 and triode Q2 form, described overvoltage crowbar is by resistance R 6, resistance R 7, resistance R 8, resistance R 9, resistance R 10, capacitor C 3, capacitor C 4, voltage stabilizing didoe DZ3, voltage stabilizing didoe DZ4, voltage stabilizing didoe DZ5, triode Q3 and triode Q4 form, described output control circuit is by resistance R 11, capacitor C 5, transistor Q5 and diode D1 form,
Wherein, resistance R 1, resistance R 2, resistance R 3, resistance R 6, one end of resistance R 7 and resistance R 8 is connected with the positive pole of power circuit, an end of the other end of described resistance R 1 and resistance R 4, one end of resistance R 5, one end of the negative pole of voltage stabilizing didoe DZ2 and capacitor C 2 is connected, and the positive pole of described voltage stabilizing didoe DZ2 is connected with the base stage of triode Q2 with an end of capacitor C 1, the other end of the other end of described resistance R 2 and capacitor C 1, the collector electrode of triode Q2 is connected with the negative pole of voltage stabilizing didoe DZ1, the other end of the other end of described resistance R 3 and resistance R 4, the collector electrode of triode Q1 is connected with the grid of transistor Q5, and the base stage of described triode Q1 is connected with the positive pole of voltage stabilizing didoe DZ1, the other end of the emitter of described triode Q1 and capacitor C 2, the other end of resistance R 5, the emitter of triode Q2, one end of the source electrode of transistor Q5 and capacitor C 5 is connected and ground connection, an end of the other end of described resistance R 6 and resistance R 9, one end of resistance R 10, one end of the negative pole of voltage stabilizing didoe DZ4 and capacitor C 4 is connected, and the positive pole of described voltage stabilizing didoe DZ4 is connected with the base stage of triode Q4 with an end of capacitor C 3, the other end of the other end of described resistance R 7 and capacitor C 3, the collector electrode of triode Q4, the negative pole of voltage stabilizing didoe DZ3 is connected with the grid of transistor Q5, the other end of the other end of described resistance R 8 and resistance R 9, the collector electrode of triode Q3 is connected with the negative pole of voltage stabilizing didoe DZ5, and the base stage of described triode Q3 is connected with the positive pole of voltage stabilizing didoe DZ3, the other end of the emitter of described triode Q3 and capacitor C 4, the other end of resistance R 10, the emitter of triode Q4, the positive pole of voltage stabilizing didoe DZ5 is connected with the power circuit input cathode and ground connection, the other end of described capacitor C 5 is connected with the negative pole of diode D1 with an end of resistance R 11, and the drain electrode of described transistor Q5 is connected with the power circuit output end negative pole with the other end of resistance R 11 and the positive pole of diode D1.
2. a kind of overvoltage according to claim 1 and under-voltage protecting circuit, is characterized in that, described triode Q1, triode Q2, triode Q3 and triode Q4 all adopt NPN type triode.
3. a kind of overvoltage according to claim 1 and under-voltage protecting circuit, is characterized in that, described transistor Q5 adopts the N-type MOS transistor.
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CN201310469788.6A CN103490388B (en) | 2013-10-10 | 2013-10-10 | A kind of overvoltage and under-voltage protecting circuit |
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CN201310469788.6A CN103490388B (en) | 2013-10-10 | 2013-10-10 | A kind of overvoltage and under-voltage protecting circuit |
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CN103490388B CN103490388B (en) | 2016-01-13 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105119488A (en) * | 2015-10-09 | 2015-12-02 | 四川特伦特科技股份有限公司 | Multi-power-source CPCI (compact peripheral component interconnect) backplane |
CN105634263A (en) * | 2016-04-12 | 2016-06-01 | 上海斐讯数据通信技术有限公司 | Protection circuit self-adaptive to input voltage |
Citations (5)
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CN2058470U (en) * | 1989-12-12 | 1990-06-20 | 广东专利技术开发公司 | Electric voltage and current combined protection type fully automatic air conditioner protector |
CN101106263A (en) * | 2006-07-14 | 2008-01-16 | 吴本林 | Secure protector for power |
CN201490685U (en) * | 2009-07-24 | 2010-05-26 | 深圳市中兴移动通信有限公司 | Multifunction power protection circuit |
US20110169456A1 (en) * | 2010-01-11 | 2011-07-14 | Richpower Microelectronics Corporation | Switch embedded integrated circuit and method for battery protection |
CN203562766U (en) * | 2013-10-10 | 2014-04-23 | 济南沃尔电子有限公司 | Over-voltage and under-voltage protection circuit |
-
2013
- 2013-10-10 CN CN201310469788.6A patent/CN103490388B/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2058470U (en) * | 1989-12-12 | 1990-06-20 | 广东专利技术开发公司 | Electric voltage and current combined protection type fully automatic air conditioner protector |
CN101106263A (en) * | 2006-07-14 | 2008-01-16 | 吴本林 | Secure protector for power |
CN201490685U (en) * | 2009-07-24 | 2010-05-26 | 深圳市中兴移动通信有限公司 | Multifunction power protection circuit |
US20110169456A1 (en) * | 2010-01-11 | 2011-07-14 | Richpower Microelectronics Corporation | Switch embedded integrated circuit and method for battery protection |
CN203562766U (en) * | 2013-10-10 | 2014-04-23 | 济南沃尔电子有限公司 | Over-voltage and under-voltage protection circuit |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105119488A (en) * | 2015-10-09 | 2015-12-02 | 四川特伦特科技股份有限公司 | Multi-power-source CPCI (compact peripheral component interconnect) backplane |
CN105634263A (en) * | 2016-04-12 | 2016-06-01 | 上海斐讯数据通信技术有限公司 | Protection circuit self-adaptive to input voltage |
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Granted publication date: 20160113 Termination date: 20161010 |