CN103489855A - Wafer packaging structure - Google Patents
Wafer packaging structure Download PDFInfo
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- CN103489855A CN103489855A CN201310462968.1A CN201310462968A CN103489855A CN 103489855 A CN103489855 A CN 103489855A CN 201310462968 A CN201310462968 A CN 201310462968A CN 103489855 A CN103489855 A CN 103489855A
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- metal
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- packaging structure
- wafer packaging
- wiring layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention relates to a wafer packaging structure. The wafer packaging structure comprises a bearing plate, metal re-wiring layers, a protective film layer, ball-under metal layers and metal balls, wherein chips and a packaging material layer are arranged on one face of the bearing plate, connecting components of the chips are exposed out of the surface of the packaging material layer, the metal re-wiring layers are formed on the packaging material layer and connected with the connecting components, the protective film layer is formed on the metal re-wiring layers and is provided with openings exposed out of the metal re-wiring layers, the ball-under metal layers are formed inside the openings and connected with the metal re-wiring layers, and the metal balls are formed on the ball-under metal layers respectively. By means of the wafer packaging structure, a plurality of chips can be packaged, and higher integration level and integration degree are achieved.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of wafer packaging structure.
Background technology
Development along with integrated circuit technique, electronic product is more and more to miniaturization, intellectuality and high reliability future development, and integrated antenna package directly affects integrated circuit, electronic module and even overall performance, in the situation that the integrated circuit (IC) wafer size is progressively dwindled, integrated level improves constantly, electronics industry finishes to have proposed more and more higher requirement to integrated antenna package.
Along with improving constantly of the compact trend of semiconductor product and product systems functional requirement, the degree of integration that how further to improve system in package becomes the problem that those skilled in the art need solution badly.
Summary of the invention
The technical problem that the present invention solves is: the degree of integration that how further to improve system in package.
For solving the problems of the technologies described above, the invention provides a kind of wafer packaging structure, comprising:
Loading plate, the one side of described loading plate is provided with chip and the envelope bed of material, and described envelope bed of material surface exposure goes out the link of chip;
Be formed at the metal be connected with described link on described envelope bed of material wiring layer again;
Be formed at the described metal protective film on wiring layer again, described protective film has exposes the described metal opening of wiring layer again;
Be formed in described opening and the described metal ball lower metal layer that wiring layer is connected again;
Be formed at the Metal Ball on described ball lower metal layer.
Wafer packaging structure provided by the invention can be encapsulated a plurality of different chips, has higher integrated level and degree of integration.
The accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, below will the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The flow chart that Fig. 1 is a kind of embodiment of wafer packaging method provided by the invention.
The process schematic representation that Fig. 2-Fig. 8 is a kind of embodiment of wafer packaging structure provided by the invention.
Embodiment
For the purpose, technical scheme and the advantage that make the embodiment of the present invention clearer, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, rather than whole embodiment.The element of describing in an accompanying drawing of the present invention or a kind of execution mode and feature can combine with element and feature shown in one or more other accompanying drawing or execution mode.It should be noted that for purposes of clarity, omitted expression and the description of unrelated to the invention, parts known to persons of ordinary skill in the art and processing in accompanying drawing and explanation.Embodiment based in the present invention, the every other embodiment that those of ordinary skills obtain under the prerequisite of not paying creative work, belong to the scope of protection of the invention.
With reference to figure 8, the present embodiment provides a kind of wafer packaging structure, comprising:
Loading plate 101, the one side of loading plate 101 is provided with chip 102 and the envelope bed of material 103, and the surface exposure of the envelope bed of material 103 goes out the link of chip 102;
Be formed at the metal that with link be connected of envelope on the bed of material 103 wiring layer 104 again;
Be formed at the metal protective film 105 on wiring layer 104 again, protective film 105 has exposes the metal opening 106 of wiring layer 104 again;
Be formed in opening 106 and the metal ball lower metal layer 107 that wiring layer 104 is connected again;
Be formed at the Metal Ball 108 on ball lower metal layer 107.
The wafer packaging structure that the present embodiment provides, can be encapsulated a plurality of different chips, has higher integrated level and degree of integration.
In the present embodiment, loading plate 101 preferably adopts metallic plate, and metallic plate has hardness and evenness preferably, can effectively reduce the inefficacy ratio of packaging; The method that chip 102 is set on loading plate 101 specifically comprises: the one side at loading plate 101 forms alignment mark by laser, and chip 102 is affixed on to the alignment mark place.
The thickness of loading plate 101 is preferably 200-400 μ m, reduces to greatest extent the integral thickness of encapsulating structure in proof strength.
Cover afterwards the envelope bed of material 103 on chip 102 and loading plate 101.
As a kind of optional execution mode, the envelope bed of material 103 is filled between each chip 103, and part is sealed the bed of material 103 and also is covered in chip 102 surfaces, is covered on the envelope bed of material on chip 102 surfaces and also is formed with through hole 109, to expose the link of chip 102.
The envelope bed of material 104 plays insulating effect on the one hand, makes on the other hand chip 102 more firmly be fixed on loading plate 101, and the situation of effectively avoiding chip 102 to come off occurs.
As a kind of optional execution mode, the diameter of through hole 109 is 70-100 μ m, just suitable with the size of link.
Metal again wiring layer 104 for realizing between each chip 102 interconnected the and cabling of functional system.
Because partly sealing the bed of material 103 is covered in chip 102 surfaces, metal wiring layer 104 again is arranged on the envelope bed of material 103, therefore, metal 104 links with chip 103 of wiring layer again contacts and can not contact with other parts of chip 102, effectively reduce the interference between each chip 102, improve the insulating properties between chip 102.
As a kind of optional execution mode, the envelope thickness of feed layer that is covered in chip 102 surfaces is preferably 10-15 μ m, be greater than 15 μ m if be covered in the envelope thickness of feed layer on chip 102 surfaces, can increase the encapsulating structure integral thickness, if thickness is less than 10 μ m, may cause each chip chamber to produce and disturb, so thickness is preferably 10-15 μ m.
Metal is formed with protective film 105 on wiring layer again, and on protective film 105, corresponding position forms opening 106, at the interior formation ball of opening 106 lower metal layer 107, forms Metal Ball 108 on ball lower metal layer 107.
As a kind of optional execution mode, the material that forms the envelope bed of material 104 is epoxy resin, and the sealing property of this material is better, and plastic packaging is easy, is the preferred materials that forms the envelope bed of material 104.
As a kind of optional execution mode, the pad that link is chip.
For further illustrating the advantage of encapsulating structure of the present invention, below in conjunction with a concrete method for packing embodiment, encapsulating structure of the present invention is described further.
Be illustrated in figure 1 the wafer packaging method flow chart of an embodiment in the present invention, comprise:
Step S201, provide loading plate, and chip and the envelope bed of material are set on the one side of loading plate, and make to seal the link that bed of material surface exposure goes out chip;
Step S202, the metal that formation is electrically connected to described link on the described envelope bed of material is wiring layer again;
Step S203, form protective film on wiring layer again at described metal, and the metal opening of wiring layer is again exposed in formation;
Step S204 forms and the metal ball lower metal layer that wiring layer is connected again, and form Metal Ball on the ball lower metal layer in described opening.
At first perform step S201, with reference to figure 2, provide loading plate 101, and form alignment mark in the one side of loading plate 101 with laser, chip 102 is being affixed on to the position of quasi-mark.
The functional surfaces of chip 102 upward, the surface that this functional surfaces is the link place.
As a kind of optional execution mode, before the one side of loading plate arranges chip and the envelope bed of material, also comprise: the one side that chip is affixed on to loading plate is polished, and to reduce the thickness of chip, makes the encapsulating structure of final formation more frivolous.
Loading plate 101 is preferably metallic plate.
With reference to figure 3, cover the envelope bed of material 103 on loading plate 101 and chip 102, concrete grammar comprises: will seal the bed of material 103 and be filled between each chip 102, and partly sealing the bed of material 103 also is covered in chip 102 surfaces; With reference to figure 4, on the lip-deep envelope bed of material of chip 102, relevant position forms through hole 109 afterwards, to expose the link of chip 102.
As a kind of optional execution mode, the employing photosensitive material of the envelope bed of material 103, for example photosensitive resin, sealing formation through hole 109 in relevant position on the bed of material by the technique of exposure imaging.
Execution step S202 with reference to figure 5, forms the metal is connected with link wiring layer 104 again on the envelope bed of material 103, and concrete grammar comprises: by metal again wiring layer be covered in and seal on the bed of material 103 and be filled in through hole 109, with being connected of foundation and link.
Because partly sealing the bed of material 104 is covered in chip 103 surfaces, metal wiring layer 104 again is arranged on the envelope bed of material, therefore, metal 104 links with chip 102 of wiring layer again contacts and can not contact with other parts of chip, effectively reduce the interference between each chip, improve the insulating properties between chip.
Execution step S203, with reference to figure 6, form protective film 105 on wiring layer 104 again at metal, forms the exposing metal opening 106 of wiring layer 104 again on protective film 105.
The material of protective film is preferably epoxy resin.
Execution step S204 with reference to figure 7 and Fig. 8, at the interior formation of opening 106 and the metal ball lower metal layer 107 that wiring layer 105 is connected again, forms Metal Ball 108 on the ball lower metal layer.
Finally, encapsulating structure being carried out to blocking cuts apart.
Wafer packaging structure provided by the invention, can be encapsulated a plurality of different chips, has higher integrated level and degree of integration, in addition, meets the compact trend requirement of semiconductor packages, and reliability is high.
Finally it should be noted that: described the present invention and advantage thereof in detail although above, be to be understood that in the situation that do not exceed the spirit and scope of the present invention that limited by appended claim and can carry out various changes, alternative and conversion.And scope of the present invention is not limited only to the specific embodiment of the described process of specification, equipment, means, method and step.The one of ordinary skilled in the art will readily appreciate that from disclosure of the present invention, can use according to the present invention and carries out with the essentially identical function of corresponding embodiment described herein or obtain process, equipment, means, method or step result essentially identical with it, that existing and will be developed future.Therefore, appended claim is intended to comprise such process, equipment, means, method or step in their scope.
Claims (9)
1. a wafer packaging structure, is characterized in that, comprising:
Loading plate, the one side of described loading plate is provided with chip and the envelope bed of material, and described envelope bed of material surface exposure goes out the link of chip;
Be formed at the metal be connected with described link on described envelope bed of material wiring layer again;
Be formed at the described metal protective film on wiring layer again, described protective film has exposes the described metal opening of wiring layer again;
Be formed in described opening and the described metal ball lower metal layer that wiring layer is connected again;
Be formed at the Metal Ball on described ball lower metal layer.
2. wafer packaging structure according to claim 1, it is characterized in that, the described envelope bed of material is filled between each described chip, and the described envelope bed of material of part also is covered in described chip surface, be covered on the envelope bed of material on described chip surface and also be formed with through hole, to expose the link of chip.
3. wafer packaging structure according to claim 2, is characterized in that, described metal wiring layer again is covered on the described envelope bed of material and is filled in described through hole, to set up and being connected of described link.
4. wafer packaging structure according to claim 2, is characterized in that, the envelope thickness of feed layer that is covered in described chip surface is 10-15 μ m.
5. wafer packaging structure according to claim 2, is characterized in that, the diameter of described through hole is 70-100 μ m.
6. wafer packaging structure according to claim 1, is characterized in that, described loading plate is metallic plate.
7. wafer packaging structure according to claim 1, is characterized in that, the thickness of described loading plate is 200-400 μ m.
8. wafer packaging structure according to claim 1, is characterized in that, the material of the described envelope bed of material of described formation is epoxy resin.
9. wafer packaging structure according to claim 1, is characterized in that, the pad that described link is chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310462968.1A CN103489855A (en) | 2013-09-30 | 2013-09-30 | Wafer packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310462968.1A CN103489855A (en) | 2013-09-30 | 2013-09-30 | Wafer packaging structure |
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| Publication Number | Publication Date |
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| CN103489855A true CN103489855A (en) | 2014-01-01 |
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| CN201310462968.1A Pending CN103489855A (en) | 2013-09-30 | 2013-09-30 | Wafer packaging structure |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015043495A1 (en) * | 2013-09-30 | 2015-04-02 | 南通富士通微电子股份有限公司 | Wafer packaging structure and method |
| CN105977233A (en) * | 2016-04-28 | 2016-09-28 | 合肥祖安投资合伙企业(有限合伙) | Chip packaging structure and manufacturing method thereof |
| CN107946283A (en) * | 2017-11-27 | 2018-04-20 | 华进半导体封装先导技术研发中心有限公司 | A kind of wafer slide glass bonding structure and the method appeared using structure progress TSV |
| CN109545691A (en) * | 2018-11-16 | 2019-03-29 | 华进半导体封装先导技术研发中心有限公司 | A kind of manufacturing method of ultra-thin fan-out package structure |
| CN111370324A (en) * | 2018-12-26 | 2020-07-03 | 中芯集成电路（宁波）有限公司 | Packaging method |
| CN111370338A (en) * | 2018-12-26 | 2020-07-03 | 中芯集成电路（宁波）有限公司 | Packaging method |
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| US20090302465A1 (en) * | 2008-06-05 | 2009-12-10 | Cheng-Tang Huang | Die rearrangement package structure and method thereof |
| CN102034799A (en) * | 2009-10-07 | 2011-04-27 | 精材科技股份有限公司 | Chip package and fabrication method thereof |
| CN102157501A (en) * | 2011-03-23 | 2011-08-17 | 南通富士通微电子股份有限公司 | Three-dimensional system level packaging structure |
| CN202905686U (en) * | 2012-07-30 | 2013-04-24 | 江阴长电先进封装有限公司 | Multichip wafer level packaging structure |
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2013
- 2013-09-30 CN CN201310462968.1A patent/CN103489855A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090302465A1 (en) * | 2008-06-05 | 2009-12-10 | Cheng-Tang Huang | Die rearrangement package structure and method thereof |
| CN102034799A (en) * | 2009-10-07 | 2011-04-27 | 精材科技股份有限公司 | Chip package and fabrication method thereof |
| CN102157501A (en) * | 2011-03-23 | 2011-08-17 | 南通富士通微电子股份有限公司 | Three-dimensional system level packaging structure |
| CN202905686U (en) * | 2012-07-30 | 2013-04-24 | 江阴长电先进封装有限公司 | Multichip wafer level packaging structure |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015043495A1 (en) * | 2013-09-30 | 2015-04-02 | 南通富士通微电子股份有限公司 | Wafer packaging structure and method |
| CN105977233A (en) * | 2016-04-28 | 2016-09-28 | 合肥祖安投资合伙企业(有限合伙) | Chip packaging structure and manufacturing method thereof |
| CN107946283A (en) * | 2017-11-27 | 2018-04-20 | 华进半导体封装先导技术研发中心有限公司 | A kind of wafer slide glass bonding structure and the method appeared using structure progress TSV |
| CN107946283B (en) * | 2017-11-27 | 2020-03-17 | 华进半导体封装先导技术研发中心有限公司 | Wafer slide bonding structure and method for TSV exposure by using same |
| CN109545691A (en) * | 2018-11-16 | 2019-03-29 | 华进半导体封装先导技术研发中心有限公司 | A kind of manufacturing method of ultra-thin fan-out package structure |
| CN109545691B (en) * | 2018-11-16 | 2021-03-26 | 华进半导体封装先导技术研发中心有限公司 | Manufacturing method of ultrathin fan-out type packaging structure |
| CN111370324A (en) * | 2018-12-26 | 2020-07-03 | 中芯集成电路（宁波）有限公司 | Packaging method |
| CN111370338A (en) * | 2018-12-26 | 2020-07-03 | 中芯集成电路（宁波）有限公司 | Packaging method |
| CN111370338B (en) * | 2018-12-26 | 2022-07-08 | 中芯集成电路（宁波）有限公司 | Packaging method |
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Application publication date: 20140101 |