CN103484829B - In a kind of pipe, the method for film is prepared in chemical vapour deposition - Google Patents
In a kind of pipe, the method for film is prepared in chemical vapour deposition Download PDFInfo
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Abstract
The invention discloses chemical vapour deposition in a kind of pipe and prepare the device of film; comprise reaction chamber; described reaction chamber has the opening for feed and discharge port that pass for tubular workpiece; described opening for feed and discharge port are laid in reaction chamber both sides respectively; described reaction chamber is positioned at and is provided with protection gas entrance above discharge port; described reaction chamber is positioned at and is provided with the outlet of protection gas below opening for feed, and described reaction chamber inside is provided with the heating unit for heating the tubular workpiece being positioned at reaction chamber.In addition, the invention also discloses the method utilizing this device to carry out managing interior chemical vapour deposition to prepare film.Apparatus structure of the present invention is simple, and cost is low, and be applicable to the good tubular workpiece of all kinds of temperature tolerance and realize plated film in pipe, can realize the many synchronous plated films of tubular workpiece, efficiency is high, is applicable to large-scale promotion application, also can realize the continuous chemical deposition of elongated tubular workpiece.
Description
Technical field
The invention belongs to Special Film preparing technical field, be specifically related to method and device that film is prepared in chemical vapour deposition in a kind of pipe.
Background technology
In practical application in industry, there is the internal surface of a large amount of tubular workpiece to need modification, such as: the oil pump sleeve on oil field, oil pipeline, chemical pipeline, automobile cylinder liner, and military field the warship canon gun tube and torpedo tube etc. that particularly naval vessel configure.The tubular workpiece inwall urgently intensive treatment that these work in the presence of a harsh environment.Such as, in petroleum industry, the corrosion failure of oil pipeline has become one of subject matter of its development of restriction.Main or the industry plating of the industrial common method to inner surface of pipe fitting modification at present.But the film that electro-plating method is formed is combined loosely with tubular workpiece substrate, the waste liquid in treating processes also can to environment, is comparatively stubborn problem.Therefore, industrial circle has started to attempt adopting various different means to replace electro-plating method.
The human hairs such as Li Dejie understand magnetron sputtering technology in a kind of pipe.The human hairs such as Zhao Yanhui understand a kind of electric arc ion plating device of inner wall of long pipe plated film.But current physical vapor deposition device is comparatively complicated, thin film composition, structure are restricted, and efficiency is lower.
Summary of the invention
Technical problem to be solved by this invention is for above-mentioned the deficiencies in the prior art, provides chemical vapour deposition in a kind of pipe to prepare the device of film.This apparatus structure is simple, and cost is low, and be applicable to the good tubular workpiece of all kinds of temperature tolerance and realize plated film in pipe, can realize the many synchronous plated films of tubular workpiece, efficiency is high, is applicable to large-scale promotion application, also can realize the continuous chemical deposition of elongated tubular workpiece.
For solving the problems of the technologies described above, the technical solution used in the present invention is: in a kind of pipe, the device of film is prepared in chemical vapour deposition, it is characterized in that, comprise reaction chamber, described reaction chamber has the opening for feed and discharge port that pass for tubular workpiece, described opening for feed and discharge port are laid in reaction chamber both sides respectively, described reaction chamber is positioned at and is provided with protection gas entrance above discharge port, described reaction chamber is positioned at and is provided with the outlet of protection gas below opening for feed, described reaction chamber inside is provided with the heating unit for heating the tubular workpiece being positioned at reaction chamber.
In above-mentioned a kind of pipe, the device of film is prepared in chemical vapour deposition, also comprises the forwarder for driving tubular workpiece level run.
In above-mentioned a kind of pipe, the device of film is prepared in chemical vapour deposition, one end that described tubular workpiece passes discharge port is provided with the vacuum pump for vacuumizing Internal tubular workpiece, and the other end of tubular workpiece is provided with the tensimeter for measuring tubular workpiece internal pressure.
In above-mentioned a kind of pipe, the device of film is prepared in chemical vapour deposition, and described reaction chamber is outside and be positioned at discharge outlet and be provided with refrigerating unit for cooling tubular workpiece.
In above-mentioned a kind of pipe, the device of film is prepared in chemical vapour deposition, and described refrigerating unit is the spiral coil cooling tube being wound in tubular workpiece outer wall.
In above-mentioned a kind of pipe, the device of film is prepared in chemical vapour deposition, and described heating unit is the heating rod being arranged at reaction chamber wall.
In above-mentioned a kind of pipe, the device of film is prepared in chemical vapour deposition, and described heating unit comprises and to be connected with tubular workpiece two end in contact being positioned at reaction chamber and to being positioned at the electrode pair of tubular workpiece electrified regulation of reaction chamber and the power supply that is connected with electrode pair.
In above-mentioned a kind of pipe, the device of film is prepared in chemical vapour deposition, and the quantity of described tubular workpiece is multiple.
In addition, present invention also offers a kind of method utilizing said apparatus to carry out managing interior chemical vapour deposition to prepare film, it is characterized in that, the method is: by tubular workpiece through reaction chamber, passes into shielding gas by protection gas entrance in reaction chamber; Then open heating unit to heat the tubular workpiece being positioned at reaction chamber, treat that temperature reaches depositing temperature, in tubular workpiece, pass into reactant gases carry out chemical vapour deposition, after cooling, obtain the chemical vapour deposition film being attached to tubular workpiece inwall.
The present invention compared with prior art has the following advantages:
1, apparatus structure of the present invention is simple, and cost is low, is applicable to the good tubular workpiece of all kinds of temperature tolerance and realizes plated film in pipe.
2, device of the present invention can realize the many synchronous plated films of tubular workpiece, and efficiency is high, is applicable to large-scale promotion application.
3, method of the present invention can be the tubular workpiece of Template preparation settling material with tubular workpiece, as carborudum tube and tubular film, as tubular graphene alkene film.
4, device of the present invention is adopted can to realize the continuous chemical deposition of elongated tubular workpiece.
5, adopt device deposit film of the present invention, film composition, structure, thickness are controlled, and efficiency is high, will promote the progress of tubular workpiece modified synergistic technical field.High-quality thin film and tubular workpiece can be prepared easily and fast simultaneously, be conducive to the technology and the industry development that advance advanced material.
Below in conjunction with drawings and Examples, technical scheme of the present invention is described in further detail.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention 1 device.
Fig. 2 is the A-A sectional view of Fig. 1.
Fig. 3 is the structural representation of the embodiment of the present invention 2 device.
Fig. 4 is the structural representation of the embodiment of the present invention 3 device.
Fig. 5 is the structural representation of the embodiment of the present invention 4 device.
Fig. 6 is the structural representation of the embodiment of the present invention 5 device.
Description of reference numerals:
1-reaction chamber; 1-1-opening for feed; 1-2-discharge port;
2-heating unit; 2-1-electrode pair; 2-2-power supply;
3-tubular workpiece; 4-tensimeter; 5-vacuum pump;
6-protection gas entrance; The outlet of 7-protection gas; 8-forwarder;
9-refrigerating unit.
Embodiment
Embodiment 1
As depicted in figs. 1 and 2, the device that in the pipe of the present embodiment, film is prepared in chemical vapour deposition comprises reaction chamber 1, described reaction chamber 1 has the opening for feed 1-1 and discharge port 1-2 that pass for tubular workpiece 3, described opening for feed 1-1 and discharge port 1-2 is laid in reaction chamber 1 both sides respectively, described reaction chamber 1 is positioned at and is provided with protection gas entrance 6 above discharge port 1-2, described reaction chamber 1 is positioned at and is provided with protection gas outlet 7 below opening for feed 1-1, and described reaction chamber 1 inside is provided with the heating unit 2 for heating the tubular workpiece 3 being positioned at reaction chamber 1; In the present embodiment, described heating unit 2 is for being arranged at the heating rod of reaction chamber 1 inwall.
Adopt the device of the present embodiment to internal diameter 50mm, the stainless steel tube of long 0.2m carries out managing interior chemical sedimentation preparation of film, reaction chamber 1 length is 0.2m, method is: by tubular workpiece 3 through reaction chamber 1, tubular workpiece 3 is made to be in reaction chamber 1, in reaction chamber 1, pass into shielding gas argon gas by protection gas entrance 6, tubular workpiece 3 outer wall is protected; Then open heating unit 2 to heat the tubular workpiece 3 being positioned at reaction chamber 1, treat that temperature reaches to pass into reactant gases in the backward tubular workpiece 3 of depositing temperature 1100 DEG C (monomethyl trichlorosilane is as precursor gas, hydrogen is as carrier gas and reaction gas, argon gas is as carrier gas, three kinds of gas mole ratio are 1: 10: 5) carry out chemical vapour deposition, depositing time 10min, obtain after cooling thickness about 300nm, smooth densification, with tubular workpiece 3 inwall in conjunction with good carborundum films.
Embodiment 2
As shown in Figure 3; the device that in the pipe of the present embodiment, film is prepared in chemical vapour deposition comprises reaction chamber 1; described reaction chamber 1 has the opening for feed 1-1 and discharge port 1-2 that pass for tubular workpiece 3; described opening for feed 1-1 and discharge port 1-2 is laid in reaction chamber 1 both sides respectively; described reaction chamber 1 is positioned at and is provided with protection gas entrance 6 above discharge port 1-2; described reaction chamber 1 is positioned at and is provided with protection gas outlet 7 below opening for feed 1-1, and described reaction chamber 1 inside is provided with the heating unit 2 for heating the tubular workpiece 3 being positioned at reaction chamber 1.
In the present embodiment, described device also comprises the forwarder 8 for driving tubular workpiece 3 level run.
In the present embodiment, one end that described tubular workpiece 3 passes discharge port 1-2 is provided with the vacuum pump 5 for vacuumizing tubular workpiece 3 inside, and the other end of tubular workpiece 3 is provided with the tensimeter 4 for measuring tubular workpiece 3 internal pressure.
In the present embodiment, described reaction chamber 1 is outside and be positioned at discharge port 1-2 place and be provided with refrigerating unit 9 for cooling tubular workpiece 3.
In the present embodiment, described refrigerating unit 9 is for being wound in the spiral coil cooling tube of tubular workpiece 3 outer wall.
In the present embodiment, described heating unit 2 is for being arranged at the heating rod of reaction chamber 1 inwall.
Adopt the device of the present embodiment to internal diameter 50mm, the stainless steel tube of long 2m carries out managing interior chemical sedimentation preparation of film, reaction chamber 1 length is 0.2m, method is: by tubular workpiece 3 through reaction chamber 1, tubular workpiece 3 position to be deposited is made to be in reaction chamber 1, in reaction chamber 1, pass into shielding gas argon gas by protection gas entrance 6, outer wall tubular workpiece 3 being positioned to reaction chamber 1 is protected, then open heating unit 2 to heat the tubular workpiece 3 being positioned at reaction chamber 1, treat that temperature reaches to pass into reactant gases in the backward tubular workpiece 3 of depositing temperature 1100 DEG C (titanium tetrachloride and methane are as precursor gas, hydrogen is as reaction gas, three kinds of gas mole ratio are 1: 6: 15), open forwarder 8 makes tubular workpiece 3 move horizontally with the rate travel of 0.02m/min simultaneously, opening vacuum pump 5 regulates the gaseous tension in tubular workpiece 3 to be 0.1MPa, the depositing time of whole tubular workpiece 3 is 90min, post-depositional tubular workpiece 3 is by obtaining thickness about 500nm after refrigerating unit 9 chilling, smooth densification, with tubular workpiece 3 inwall in conjunction with good carborundum films.
Embodiment 3
As shown in Figure 4; the device that in the pipe of the present embodiment, film is prepared in chemical vapour deposition comprises reaction chamber 1; described reaction chamber 1 has the opening for feed 1-1 and discharge port 1-2 that pass for tubular workpiece 3; described opening for feed 1-1 and discharge port 1-2 is laid in reaction chamber 1 both sides respectively; described reaction chamber 1 is positioned at and is provided with protection gas entrance 6 above discharge port 1-2; described reaction chamber 1 is positioned at and is provided with protection gas outlet 7 below opening for feed 1-1, and described reaction chamber 1 inside is provided with the heating unit 2 for heating the tubular workpiece 3 being positioned at reaction chamber 1.
In the present embodiment, described device also comprises the forwarder 8 for driving tubular workpiece 3 level run.
In the present embodiment, one end that described tubular workpiece 3 passes discharge port 1-2 is provided with the vacuum pump 5 for vacuumizing tubular workpiece 3 inside, and the other end of tubular workpiece 3 is provided with the tensimeter 4 for measuring tubular workpiece 3 internal pressure.
In the present embodiment, described reaction chamber 1 is outside and be positioned at discharge port 1-2 place and be provided with refrigerating unit 9 for cooling tubular workpiece 3.
In the present embodiment, described refrigerating unit 9 is for being wound in the spiral coil cooling tube of tubular workpiece 3 outer wall.
In the present embodiment, described heating unit 2 is for being arranged at the heating rod of reaction chamber 1 inwall.
In the present embodiment, the quantity of described tubular workpiece 3 is 3.
Adopt the device of the present embodiment to 3 internal diameter 50mm, the nickel pipe of long 2m carries out managing interior chemical sedimentation preparation of film simultaneously, reaction chamber 1 length is 0.2m, method is: 3 tubular workpieces 3 are each passed through reaction chamber 1, tubular workpiece 3 position to be deposited is made to be in reaction chamber 1, in reaction chamber 1, pass into shielding gas argon gas by protection gas entrance 6, outer wall tubular workpiece 3 being positioned to reaction chamber 1 is protected, then open heating unit 2 to heat the tubular workpiece 3 being positioned at reaction chamber 1, treat that temperature reaches to pass into reactant gases in backward 3 tubular workpieces 3 of depositing temperature 1000 DEG C (ethanol is as precursor gas, hydrogen is as reaction gas, argon gas is as carrier gas and carrier gas, three kinds of gas mole ratio are 1: 5: 10), open forwarder 8 makes 3 tubular workpieces 3 move horizontally with the rate travel of 0.04m/min simultaneously simultaneously, opening vacuum pump 5 regulates the gaseous tension in 3 tubular workpieces 3 to be 0.05MPa, the depositing time of 3 tubular workpieces 3 is 45min, post-depositional tubular workpiece 3 is by obtaining the graphene film of thickness about the 3nm being attached to nickel inside pipe wall after refrigerating unit 9 chilling, the nickel pipe being attached with graphene film is placed in dilute hydrochloric acid 48h, nickel pipe dissolves completely, obtain grapheme tube.
Embodiment 4
As shown in Figure 5; the device that in the pipe of the present embodiment, film is prepared in chemical vapour deposition comprises reaction chamber 1; described reaction chamber 1 has the opening for feed 1-1 and discharge port 1-2 that pass for tubular workpiece 3; described opening for feed 1-1 and discharge port 1-2 is laid in reaction chamber 1 both sides respectively; described reaction chamber 1 is positioned at and is provided with protection gas entrance 6 above discharge port 1-2; described reaction chamber 1 is positioned at and is provided with protection gas outlet 7 below opening for feed 1-1, and described reaction chamber 1 inside is provided with the heating unit 2 for heating the tubular workpiece 3 being positioned at reaction chamber 1.
In the present embodiment, described device also comprises the forwarder 8 for driving tubular workpiece 3 level run.
In the present embodiment, one end that described tubular workpiece 3 passes discharge port 1-2 is provided with the vacuum pump 5 for vacuumizing tubular workpiece 3 inside, and the other end of tubular workpiece 3 is provided with the tensimeter 4 for measuring tubular workpiece 3 internal pressure.
In the present embodiment, described reaction chamber 1 is outside and be positioned at discharge port 1-2 place and be provided with refrigerating unit 9 for cooling tubular workpiece 3.
In the present embodiment, described refrigerating unit 9 is for being wound in the spiral coil cooling tube of tubular workpiece 3 outer wall.
In the present embodiment, described heating unit 2 comprises and to be connected with the tubular workpiece 3 liang of end in contact being positioned at reaction chamber 1 and to being positioned at the electrode pair 2-1 of tubular workpiece 3 electrified regulation of the reaction chamber 1 and power supply 2-2 that is connected with electrode pair 2-1.
Adopt the device of the present embodiment to internal diameter 50mm, the carbon tube of long 2m carries out managing interior chemical sedimentation preparation of film, reaction chamber 1 length is 0.2m, method is: by tubular workpiece 3 through reaction chamber 1, tubular workpiece 3 position to be deposited is made to be in reaction chamber 1, in reaction chamber 1, pass into shielding gas argon gas by protection gas entrance 6, outer wall tubular workpiece 3 being positioned to reaction chamber 1 is protected, then the power supply (2-2) of heating unit 2 is connected, by electrode pair (2-1), electrified regulation is carried out to the tubular workpiece 3 being positioned at reaction chamber 1, treat that temperature reaches to pass into reactant gases in the backward tubular workpiece 3 of depositing temperature 1000 DEG C (monomethyl trichlorosilane is as precursor gas, hydrogen is as carrier gas and reaction gas, argon gas is as carrier gas, three kinds of gas mole ratio are 1: 10: 3), open forwarder 8 makes tubular workpiece 3 move horizontally with the rate travel of 0.02m/min simultaneously, opening vacuum pump 5 regulates the gaseous tension in tubular workpiece 3 to be 0.05MPa, the depositing time of whole tubular workpiece 3 is 90min, post-depositional tubular workpiece 3 is by obtaining the carborundum films of thickness about the 300nm being attached to carbon tube inwall after refrigerating unit 9 chilling.
Embodiment 5
As shown in Figure 6; the device that in the pipe of the present embodiment, film is prepared in chemical vapour deposition comprises reaction chamber 1; described reaction chamber 1 has the opening for feed 1-1 and discharge port 1-2 that pass for tubular workpiece 3; described opening for feed 1-1 and discharge port 1-2 is laid in reaction chamber 1 both sides respectively; described reaction chamber 1 is positioned at and is provided with protection gas entrance 6 above discharge port 1-2; described reaction chamber 1 is positioned at and is provided with protection gas outlet 7 below opening for feed 1-1, and described reaction chamber 1 inside is provided with the heating unit 2 for heating the tubular workpiece 3 being positioned at reaction chamber 1.
In the present embodiment, described heating unit 2 comprises and to be connected with the tubular workpiece 3 liang of end in contact being positioned at reaction chamber 1 and to being positioned at the electrode pair 2-1 of tubular workpiece 3 electrified regulation of the reaction chamber 1 and power supply 2-2 that is connected with electrode pair 2-1.
Adopt the device of the present embodiment to internal diameter 50mm, the carbon tube of long 0.2m carries out managing interior chemical sedimentation preparation of film, reaction chamber 1 length is 0.2m, method is: by tubular workpiece 3 through reaction chamber 1, tubular workpiece 3 position to be deposited is made to be in reaction chamber 1, in reaction chamber 1, pass into shielding gas argon gas by protection gas entrance 6, outer wall tubular workpiece 3 being positioned to reaction chamber 1 is protected; Then the power supply (2-2) of heating unit 2 is connected, by electrode pair (2-1), electrified regulation is carried out to the tubular workpiece 3 being positioned at reaction chamber 1, treat that temperature reaches to pass into reactant gases in the backward tubular workpiece 3 of depositing temperature 1200 DEG C (monomethyl trichlorosilane is as precursor gas, hydrogen is as carrier gas and reaction gas, argon gas is as carrier gas, three kinds of gas mole ratio are 1: 10: 5), the depositing time of tubular workpiece 3 is 3h, after cooling, the film separation of carbon tube and deposition, obtains the carborudum tube of external diameter about 50mm, thickness about 300 μm.
The above; it is only preferred embodiment of the present invention; not any restriction is done to the present invention, every above embodiment is done according to invention technical spirit any simple modification, change and equivalent structure change, all still belong in the protection domain of technical solution of the present invention.
Claims (4)
1. in a pipe, the method for film is prepared in chemical vapour deposition, it is characterized in that, the device preparing film employing comprises reaction chamber (1), described reaction chamber (1) has the opening for feed (1-1) and discharge port (1-2) that pass for tubular workpiece (3), described opening for feed (1-1) and discharge port (1-2) are laid in reaction chamber (1) both sides respectively, described reaction chamber (1) is gone up and is positioned at discharge port (1-2) top and is provided with protection gas entrance (6), described reaction chamber (1) is gone up and is positioned at opening for feed (1-1) below and is provided with protection gas outlet (7), described reaction chamber (1) inside is provided with the heating unit (2) for heating the tubular workpiece (3) being positioned at reaction chamber (1), one end that described tubular workpiece (3) passes discharge port (1-2) is provided with the vacuum pump (5) for vacuumizing tubular workpiece (3) inside, the other end of tubular workpiece (3) is provided with the tensimeter (4) for measuring tubular workpiece (3) internal pressure, also comprise the forwarder (8) for driving tubular workpiece (3) level run, described reaction chamber (1) is outside and be positioned at discharge port (1-2) place and be provided with refrigerating unit (9) for cooling tubular workpiece (3), and described refrigerating unit (9) is for being wound in the spiral coil cooling tube of tubular workpiece (3) outer wall,
The method preparing grapheme tube is: by tubular workpiece (3) through reaction chamber (1), passes into shielding gas argon gas by protection gas entrance (6) in reaction chamber (1), then open heating unit (2) to heat the tubular workpiece (3) being positioned at reaction chamber (1), treat that temperature reaches to pass into reactant gases in depositing temperature 1000 DEG C of backward tubular workpieces (3) and carry out chemical vapour deposition, open forwarder (8) makes tubular workpiece (3) move horizontally with the rate travel of 0.04m/min simultaneously, opening vacuum pump (5) regulates the gaseous tension in tubular workpiece (3) to be 0.05MPa, depositing time is 45min, post-depositional tubular workpiece (3) is by obtaining the graphene film being attached to tubular workpiece (3) inwall after refrigerating unit (9) chilling, the tubular workpiece (3) being attached with graphene film is placed in dilute hydrochloric acid 48h, tubular workpiece (3) dissolves completely, obtain grapheme tube, described reactant gases is ethanol, hydrogen and the argon gas mixed gas according to the mixed in molar ratio of 1:5:10, described tubular workpiece (3) is nickel pipe,
The method preparing carborudum tube is: by tubular workpiece (3) through reaction chamber (1), passes into shielding gas argon gas by protection gas entrance (6) in reaction chamber (1); Then open heating unit (2) to heat the tubular workpiece (3) being positioned at reaction chamber (1), treat that temperature reaches to pass into reactant gases in depositing temperature 1200 DEG C of backward tubular workpieces (3) and carry out chemical vapour deposition, depositing time is 3h, after cooling, tubular workpiece (3) and the film separation of deposition, obtain carborudum tube; Described reactant gases is monomethyl trichlorosilane, hydrogen and the argon gas mixed gas according to the mixed in molar ratio of 1:10:5; Described tubular workpiece (3) is carbon tube.
2. in a kind of pipe according to claim 1, the method for film is prepared in chemical vapour deposition, it is characterized in that, described heating unit (2) is for being arranged at the heating rod of reaction chamber (1) inwall.
3. in a kind of pipe according to claim 1, the method for film is prepared in chemical vapour deposition, it is characterized in that, described heating unit (2) comprises and to be connected with tubular workpiece (3) two end in contact being positioned at reaction chamber (1) and to being positioned at the electrode pair (2-1) of tubular workpiece (3) electrified regulation of reaction chamber (1) and the power supply (2-2) that is connected with electrode pair (2-1).
4. in a kind of pipe according to claim 1, the method for film is prepared in chemical vapour deposition, it is characterized in that, the quantity of described tubular workpiece (3) is multiple.
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| CN201310459850.3A CN103484829B (en) | 2013-09-29 | 2013-09-29 | In a kind of pipe, the method for film is prepared in chemical vapour deposition |
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| CN105222117B (en) * | 2014-06-04 | 2017-10-27 | 华北电力大学 | A kind of U-tube with graphene layer |
| CN105506579B (en) * | 2015-12-15 | 2018-02-02 | 南京工程学院 | A kind of preparation method of graphene coated silicon carbide nanometer line |
| US9844799B2 (en) * | 2015-12-16 | 2017-12-19 | General Electric Company | Coating methods |
| NL2017558B1 (en) * | 2016-09-30 | 2018-04-10 | Tempress Ip B V | A chemical vapour deposition apparatus and use thereof |
| CN107014224A (en) * | 2017-05-22 | 2017-08-04 | 贵州兰鑫石墨机电设备制造有限公司 | The plate type heat exchanger of graphite-based carbon SiClx vapour deposition |
| JP7175169B2 (en) * | 2018-11-30 | 2022-11-18 | 昭和電工株式会社 | SiC epitaxial growth equipment |
| CN110218987A (en) * | 2019-07-24 | 2019-09-10 | 合肥百思新材料研究院有限公司 | A kind of cold wall method CVD deposition equipment and its working method |
| CN113005427A (en) * | 2019-12-20 | 2021-06-22 | 中核北方核燃料元件有限公司 | Full-size SiC composite material cladding tube chemical vapor deposition device |
| CN112647057A (en) * | 2020-11-13 | 2021-04-13 | 中国科学院金属研究所 | Method for preparing silicon carbide tube by adopting chemical vapor deposition process |
| CN112876060B (en) * | 2021-02-02 | 2022-09-02 | 烽火通信科技股份有限公司 | Preparation method of large-size optical fiber preform core rod |
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| US3865647A (en) * | 1970-09-30 | 1975-02-11 | Siemens Ag | Method for precipitation of semiconductor material |
| JPH0353071A (en) * | 1989-07-20 | 1991-03-07 | Nkk Corp | Method and device for forming film on inside surface of pipe-shaped body and vessel |
| JP3864585B2 (en) * | 1998-11-04 | 2007-01-10 | 住友金属工業株式会社 | Method of oxidizing the inner surface of stainless steel pipe |
| AU2002362044A1 (en) * | 2001-12-19 | 2003-07-09 | Corning Incorporated | Device for producing pcvd coated glass tubes for the drawing of optical fibers |
| CN102730679A (en) * | 2012-07-23 | 2012-10-17 | 贵州新碳高科有限责任公司 | Device and method for continuously preparing graphene powder |
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