CN103482563A - 一种mems微结构的制备方法 - Google Patents
一种mems微结构的制备方法 Download PDFInfo
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- CN103482563A CN103482563A CN201210196631.6A CN201210196631A CN103482563A CN 103482563 A CN103482563 A CN 103482563A CN 201210196631 A CN201210196631 A CN 201210196631A CN 103482563 A CN103482563 A CN 103482563A
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CN201210196631.6A CN103482563B (zh) | 2012-06-14 | 2012-06-14 | 一种mems微结构的制备方法 |
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CN201210196631.6A CN103482563B (zh) | 2012-06-14 | 2012-06-14 | 一种mems微结构的制备方法 |
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CN103482563A true CN103482563A (zh) | 2014-01-01 |
CN103482563B CN103482563B (zh) | 2016-03-09 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104627956A (zh) * | 2015-02-09 | 2015-05-20 | 中国电子科技集团公司第五十四研究所 | 一种rf mems器件双层光刻胶牺牲层的制备方法 |
CN106662560A (zh) * | 2014-07-16 | 2017-05-10 | 西门子公司 | 用于吸附和/或解吸气体的至少一种成分的预浓缩器 |
CN106706175A (zh) * | 2015-11-12 | 2017-05-24 | 上海丽恒光微电子科技有限公司 | 压力传感器的制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1357802A (zh) * | 2000-10-19 | 2002-07-10 | 伊利诺斯器械工程公司 | 用作压花表面的光可限定的聚酰亚胺薄膜 |
CN101082523A (zh) * | 2007-06-27 | 2007-12-05 | 中国科学院上海微系统与信息技术研究所 | 一种柔性温度传感器的制作方法 |
CN101561629A (zh) * | 2008-04-16 | 2009-10-21 | 中国科学院微电子研究所 | 一种用倒梯形剖面的光刻胶制作介质边缘缓坡的方法 |
CN101819382A (zh) * | 2009-02-26 | 2010-09-01 | 中芯国际集成电路制造(上海)有限公司 | 在边缘光刻胶去除过程中减少晶圆缺陷的方法及晶圆结构 |
CN101882756A (zh) * | 2010-06-02 | 2010-11-10 | 中国科学院半导体研究所 | 聚酰亚胺填埋双沟脊型器件沟道的制作方法 |
JP4627422B2 (ja) * | 2004-09-17 | 2011-02-09 | 株式会社リコー | 液滴吐出ヘッドの製造方法 |
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2012
- 2012-06-14 CN CN201210196631.6A patent/CN103482563B/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1357802A (zh) * | 2000-10-19 | 2002-07-10 | 伊利诺斯器械工程公司 | 用作压花表面的光可限定的聚酰亚胺薄膜 |
JP4627422B2 (ja) * | 2004-09-17 | 2011-02-09 | 株式会社リコー | 液滴吐出ヘッドの製造方法 |
CN101082523A (zh) * | 2007-06-27 | 2007-12-05 | 中国科学院上海微系统与信息技术研究所 | 一种柔性温度传感器的制作方法 |
CN101561629A (zh) * | 2008-04-16 | 2009-10-21 | 中国科学院微电子研究所 | 一种用倒梯形剖面的光刻胶制作介质边缘缓坡的方法 |
CN101819382A (zh) * | 2009-02-26 | 2010-09-01 | 中芯国际集成电路制造(上海)有限公司 | 在边缘光刻胶去除过程中减少晶圆缺陷的方法及晶圆结构 |
CN101882756A (zh) * | 2010-06-02 | 2010-11-10 | 中国科学院半导体研究所 | 聚酰亚胺填埋双沟脊型器件沟道的制作方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106662560A (zh) * | 2014-07-16 | 2017-05-10 | 西门子公司 | 用于吸附和/或解吸气体的至少一种成分的预浓缩器 |
CN104627956A (zh) * | 2015-02-09 | 2015-05-20 | 中国电子科技集团公司第五十四研究所 | 一种rf mems器件双层光刻胶牺牲层的制备方法 |
CN106706175A (zh) * | 2015-11-12 | 2017-05-24 | 上海丽恒光微电子科技有限公司 | 压力传感器的制备方法 |
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CN103482563B (zh) | 2016-03-09 |
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Effective date of registration: 20191225 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: BYD Co.,Ltd. |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
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Granted publication date: 20160309 |