CN103475215A - Boost structure and its feedback circuit - Google Patents
Boost structure and its feedback circuit Download PDFInfo
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- CN103475215A CN103475215A CN2012101848108A CN201210184810A CN103475215A CN 103475215 A CN103475215 A CN 103475215A CN 2012101848108 A CN2012101848108 A CN 2012101848108A CN 201210184810 A CN201210184810 A CN 201210184810A CN 103475215 A CN103475215 A CN 103475215A
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Abstract
The invention provides a boost structure and its feedback circuit. The feedback circuit comprises an isolating and transmitting module used for receiving output voltage from an output end of a boost main circuit and transmitting the output voltage and a first NMOS transistor, wherein a grid electrode of the first NMOS transistor receives input voltage from an input end of the boost main circuit, a source electrode of the first NMOS transistor is connected to a body electrode and receives the output voltage transmitted by the isolating and transmitting module, and a drain electrode of the first NMOS transistor produces a control signal and transmits the control signal to a control end of the boost main circuit. According to the invention, a circuit can be greatly simplified, and response speed is raised.
Description
Technical field
The present invention relates to a kind of structure and feedback circuit thereof of boosting.
Background technology
In the fields such as Switching Power Supply and LED drive circuit, a kind of boosting (boost) structure is arranged, will input when starting with output and directly be communicated with, after output potential approaches the input current potential, directly connection model removes, and Switching Power Supply begins operating in normal on off state.
The method of controlling direct connection model in the custom circuit of prior art is to the output voltage sampling, compares with input voltage, and is controlled according to comparative result.Fig. 1 shows the structured flowchart of a kind of structure of boosting of the prior art, comprise: (boost) direct circuit 101 and coupled output sampling and control circuit 102 boost, the output voltage V out of output sampling and 102 pairs of boost direct circuits 101 of control circuit is sampled, and compare with input voltage vin, according to comparative result, boost direct circuit 101 is controlled, make will input when starting with output and directly be communicated with, after output voltage V out approaches input voltage vin, will directly be communicated with and remove.The shortcoming of such scheme mainly contains 2: the firstth, and sample circuit self need to be operated under certain voltage, and the application of boost structure has determined that input voltage is lower, thus cause the sample circuit structure in the low pressure situation more complicated, poor reliability; The secondth, because circuit structure is more complicated, cause response speed slow.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of structure and feedback circuit thereof of boosting, and can significantly simplify circuit, improves response speed.
For solving the problems of the technologies described above, the invention provides a kind of feedback circuit, be configured to and the main body which couple of boosting, comprising:
Isolated transmission module, receive the described output voltage of main body circuit output end it is transmitted of boosting;
The first nmos pass transistor, its grid receives the input voltage of the described main body circuit input end that boosts, its source electrode is connected with the body electrode and receives the output voltage that described isolated transmission module is transmitted, and its drain electrode produces control signal and transmits it to the control end of the described main body circuit that boosts.
Alternatively, described control signal is controlled the described main body circuit that boosts and when starting, described input directly is communicated with output, removes direct connection the between described input and output after described output voltage approaches described input voltage.
Alternatively, described isolated transmission module comprises:
The second nmos pass transistor, its grid receives the input voltage of the described main body circuit input end that boosts, and its drain electrode receives the output voltage of the described main body circuit output end that boosts, and its source electrode is connected with the source electrode of described the first nmos pass transistor with the body electrode.
Alternatively, described isolated transmission module comprises:
Transmission gate, its control end receives the input voltage of the described main body circuit input end that boosts, and its input receives the output voltage of the described main body circuit output end that boosts, and its output connects the source electrode of described the first nmos pass transistor.
The present invention also provides a kind of structure of boosting, comprise the described feedback circuit of above-mentioned any one and with the main body circuit that boosts of its coupling.
Compared with prior art, the present invention has the following advantages:
In the feedback circuit of the embodiment of the present invention, adopt isolated transmission module by the source electrode of the first nmos pass transistor and output voltage isolation, and output voltage is passed to the first nmos pass transistor, the first nmos pass transistor produces the output state of bulk effect switch-over control signal, thereby control the main body circuit that boosts, input and output directly is communicated with or the direct connection of the two is removed.
The accompanying drawing explanation
Fig. 1 is the structured flowchart of a kind of structure of boosting of the prior art;
Fig. 2 is the structured flowchart of the structure of boosting of the embodiment of the present invention;
Fig. 3 is the detailed circuit diagram of the feedback circuit of the embodiment of the present invention.
Embodiment
Below in conjunction with specific embodiments and the drawings, the invention will be further described, but should not limit the scope of the invention with this.
Fig. 2 shows the structured flowchart of the structure of boosting of the present embodiment, comprise boost main body circuit 201 and with the feedback circuit 202 of its coupling.
Wherein, the main body of boosting circuit 201 is under the control of the control signal control of feedback circuit 202 outputs, when starting, input directly is communicated with output, in other words, when starting, input voltage vin is much smaller than output voltage V out, and output and the input of the main body of now boosting circuit 201 directly are communicated with; After output voltage V out approaches input voltage vin, the main body of boosting circuit 201 removes the direct connection between input and output under the control of control signal control.The main body of boosting circuit 201 can adopt structure same as the prior art.
Herein, output voltage V out approaches input voltage vin and refers to output voltage and increase to gradually with input voltage vin and equate, it will be appreciated by those skilled in the art that, " equating " should be understood to the numerical value of the two in the error allowed band.
In the present embodiment, isolated transmission module 30 comprises: the second nmos pass transistor M2, its grid receives the input voltage vin of main body circuit 201 inputs that boost, its drain electrode receives the output voltage V out of main body circuit 201 outputs that boost, and its source electrode is connected with the source electrode of the first nmos pass transistor M1 with the body electrode.
In the course of the work, when output voltage V out is less than input voltage vin, the second nmos pass transistor M2 conducting, the first nmos pass transistor M1 conducting, control signal control is electronegative potential; When output voltage V out approaches input voltage vin, the second nmos pass transistor M2 conducting, the first nmos pass transistor M1 is due to bulk effect in weak conducting state, and control signal control is high potential, but output resistance now increases; As output voltage V out during higher than input voltage vin, the second nmos pass transistor M2 conducting, the first nmos pass transistor M1 turn-offs because gate source voltage Vgs is less than 0, making control signal control is high-impedance state, just in time reach and decontrol the purpose of controlling, pulse-width modulation (PWM) signal that ensuing control can be produced by other modules carrys out the gate capacitance of power ratio control pipe.
By upper, in the present embodiment, carry out the output state of switch-over control signal control by the bulk effect of the first nmos pass transistor M1, after output voltage V out approaches input voltage vin, directly connection model removes, and begins operating in normal on off state.Isolated transmission module 30 can be kept apart the source electrode of the first nmos pass transistor M1 and output voltage V out, high potential or electronegative potential are passed to the first nmos pass transistor M1 simultaneously, carry out the output state of switch-over control signal control by the bulk effect of the first nmos pass transistor M1.Whether directly the control logic special with available technology adopting controlled connection and compared, and significantly simplified circuit, improved response speed.
In addition, difference according to specific embodiment, isolated transmission module 30 can also adopt other suitable structures, for example can adopt transmission gate to realize, its control end receives the input voltage of the main body circuit input end that boosts, its input receives the output voltage of the main body circuit output end that boosts, and its output connects the source electrode of the first nmos pass transistor.
Boost structure and the feedback circuit thereof of the present embodiment can be applied in the fields such as Switching Power Supply, LED drive circuit.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that the claims in the present invention were defined.
Claims (5)
1. a feedback circuit, be configured to and the main body which couple of boosting, and it is characterized in that, comprising:
Isolated transmission module, receive the described output voltage of main body circuit output end it is transmitted of boosting;
The first nmos pass transistor, its grid receives the input voltage of the described main body circuit input end that boosts, its source electrode is connected with the body electrode and receives the output voltage that described isolated transmission module is transmitted, and its drain electrode produces control signal and transmits it to the control end of the described main body circuit that boosts.
2. feedback circuit according to claim 1, it is characterized in that, described control signal is controlled the described main body circuit that boosts and when starting, described input directly is communicated with output, removes direct connection the between described input and output after described output voltage approaches described input voltage.
3. feedback circuit according to claim 1 and 2, is characterized in that, described isolated transmission module comprises:
The second nmos pass transistor, its grid receives the input voltage of the described main body circuit input end that boosts, and its drain electrode receives the output voltage of the described main body circuit output end that boosts, and its source electrode is connected with the source electrode of described the first nmos pass transistor with the body electrode.
4. feedback circuit according to claim 1 and 2, is characterized in that, described isolated transmission module comprises:
Transmission gate, its control end receives the input voltage of the described main body circuit input end that boosts, and its input receives the output voltage of the described main body circuit output end that boosts, and its output connects the source electrode of described the first nmos pass transistor.
5. the structure of boosting, comprise the described feedback circuit of any one in claim 1 to 4 and with the main body circuit that boosts of its coupling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210184810.8A CN103475215B (en) | 2012-06-06 | 2012-06-06 | Boost configuration and feedback circuit thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210184810.8A CN103475215B (en) | 2012-06-06 | 2012-06-06 | Boost configuration and feedback circuit thereof |
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| Publication Number | Publication Date |
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| CN103475215A true CN103475215A (en) | 2013-12-25 |
| CN103475215B CN103475215B (en) | 2016-03-30 |
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| CN201210184810.8A Active CN103475215B (en) | 2012-06-06 | 2012-06-06 | Boost configuration and feedback circuit thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004120940A (en) * | 2002-09-27 | 2004-04-15 | Texas Instr Japan Ltd | Dc-dc converter |
| CN1779861A (en) * | 2004-11-24 | 2006-05-31 | 上海华虹Nec电子有限公司 | Word-line boosting circuit for low-voltage non-volatile memory |
| CN101938212A (en) * | 2009-07-01 | 2011-01-05 | 瑞萨电子(中国)有限公司 | Low-voltage start-up circuit and boost converter |
| CN102035385A (en) * | 2010-12-29 | 2011-04-27 | 苏州华芯微电子股份有限公司 | Voltage switching circuit |
| CN102332825A (en) * | 2010-07-13 | 2012-01-25 | 安凯(广州)微电子技术有限公司 | DC-DC converter control circuit and converter |
-
2012
- 2012-06-06 CN CN201210184810.8A patent/CN103475215B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004120940A (en) * | 2002-09-27 | 2004-04-15 | Texas Instr Japan Ltd | Dc-dc converter |
| CN1779861A (en) * | 2004-11-24 | 2006-05-31 | 上海华虹Nec电子有限公司 | Word-line boosting circuit for low-voltage non-volatile memory |
| CN101938212A (en) * | 2009-07-01 | 2011-01-05 | 瑞萨电子(中国)有限公司 | Low-voltage start-up circuit and boost converter |
| CN102332825A (en) * | 2010-07-13 | 2012-01-25 | 安凯(广州)微电子技术有限公司 | DC-DC converter control circuit and converter |
| CN102035385A (en) * | 2010-12-29 | 2011-04-27 | 苏州华芯微电子股份有限公司 | Voltage switching circuit |
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| Publication number | Publication date |
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| CN103475215B (en) | 2016-03-30 |
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Effective date of registration: 20210107 Address after: 214135 -6, Linghu Avenue, Wuxi Taihu international science and Technology Park, Wuxi, Jiangsu, China, 180 Patentee after: China Resources micro integrated circuit (Wuxi) Co., Ltd Address before: 201103 10th floor, building 1, No.100 Zixiu Road, Minhang District, Shanghai Patentee before: CHINA RESOURCES POWTECH (SHANGHAI) Co.,Ltd. |