CN103475061A - Photovoltaic intelligent controller - Google Patents
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Abstract
The invention discloses a photovoltaic intelligent controller and relates to the field of photovoltaic power generation application. According to the controller, a 5A multi-type battery charging management integration chip CN3722 having a solar cell maximum power point tracking (MPPT) function is adopted to charge a lithium iron phosphate battery, a push-pull type boost main circuit performs boost conversion on storage battery voltage, and according to an inversion part, a pure sine wave inversion generator digitization chip EG8010 having a dead zone control function is adopted to perform direct DC-AC power conversion. According to a system, less chips and a simple circuit are adopted to achieve the process of converting solar energy into electric energy, and 220V/50Hz pure sine waves which are high in precision and reliability and extremely small in distortion and harmonic waves are obtained.
Description
technical field
The present invention relates to the photovoltaic generation application, specifically a kind of photovoltaic intelligent controller; Solar energy is changed into to electric energy and stored, the controller that then inversion is the 220V/50Hz alternating current.
background technology
In recent years, people urgently wish that the new technology of applicating energy-saving environmental protection solves global energy shortage and problem of environmental pollution.Recently, the file that individual photovoltaic generation is sold to national grid is launched respectively in each big city, and China is solar energy resources big country, so market potential is very large.And on market, the controller for photovoltaic generation is unequal to ideal, solar panel is low to charge in batteries efficiency, circuit is complicated and inversion is all sinewave outputs of square wave or correction, and application scenario is very limited.And, in the inverter product of pure sine wave output, still promoting the Industrial Frequency Transformer formal output, this small product size is large and price is more expensive.
summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the invention provides a kind of photovoltaic intelligent controller, volume is little, high-performance, charge efficiency are high, pure sine wave output, reliability is high and can carry out self-protection.
The present invention realizes with following technical scheme: a kind of photovoltaic intelligent controller; Comprise solar panel, the charger be connected with solar panel, the storage battery be connected with charger and the inverter be connected with storage battery; Described charger adopts battery charging management integrated chip CN3722; Described storage battery connect Three-end voltage stabilizer LM7812 and LM7805 respectively output dc voltage+12V and+5V; Described inverter comprises booster circuit and inverter circuit; The 12V direct current of storage battery through booster circuit boost, filter rectification output 320V direct-flow steady voltage then; Described inverter circuit comprises EG8010 chip, IR2100 drive circuit and the DC/AC full bridge inverter be connected with booster circuit; The EG8010 chip produces the sinusoidal pulse width modulation signal to the IR2100 drive circuit, and the IR2100 drive circuit drives the DC/AC full bridge inverter to carry out the DC-AC power conversion; The OSC1 of EG8010 chip, the external 12MHz crystal oscillator of OSC2 pin; The pin TFB of EG8010 chip connects temperature detection feedback circuit, pin V
fBconnect the output voltage feedback circuit, pin I
fBthe output current feedback circuit.
The invention has the beneficial effects as follows: this controller has been realized with maximum power point, storage battery being charged by battery charging management integrated chip CN3722, and storage battery is inputted to low-voltage and latch, temperature monitoring, overvoltage protection and charged state indication.Converting Unit has realized showing by the serial port liquid crystal screen display voltage, frequency, temperature and the electric current of inverter, simultaneously to inversion output overvoltage, under-voltage, overcurrent, the overheated protection.This design used less chip, simple circuit to realize solar energy is converted into the process of electric energy, obtained all very little 220V/50Hz pure sine waves of high accuracy, high reliability, distortion and harmonic wave.
the accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described.
Fig. 1 system principle diagram;
Fig. 2 is charger circuit figure
Fig. 3 is that TL494 pushes away and exempts from formula booster circuit figure
Fig. 4 is the TL494 peripheral circuit diagram;
Fig. 5 is EG8010 chip periphery circuit diagram;
Fig. 6 is IR2100 drive circuit figure;
Fig. 7 is DC/AC full bridge inverter figure;
Fig. 8 is output voltage feedback circuit figure;
Fig. 9 is temperature sensing circuit figure.
embodiment
?as shown in Figure 1, a kind of photovoltaic intelligent controller has a solar panel, the charger be connected with solar panel, the storage battery be connected with charger and the inverter be connected with storage battery; Described charger adopts battery charging management integrated chip CN3722; Described storage battery connect Three-end voltage stabilizer LM7812 and LM7805 respectively output dc voltage+12V and+5V; Described inverter comprises booster circuit and inverter circuit; The 12V direct current of storage battery through booster circuit boost, filter rectification output 320V direct-flow steady voltage then; Described inverter circuit comprises EG8010 chip, IR2100 drive circuit and the DC/AC full bridge inverter be connected with booster circuit; The EG8010 chip produces the sinusoidal pulse width modulation signal to the IR2100 drive circuit, and the IR2100 drive circuit drives the DC/AC full bridge inverter to carry out the DC-AC power conversion; External serial ports 12832 LCD MODULE of EG8010 chip; The OSC1 of EG8010 chip, the external 12MHz crystal oscillator of OSC2 pin; The pin TFB of EG8010 chip connects temperature detection feedback circuit, pin V
fBconnect the output voltage feedback circuit, pin I
fBthe output current feedback circuit.
The photovoltaic intelligent controller comprises charging circuit and inverter circuit.
Live part: in independent photovoltaic generating system, wish can be unnecessary solar cell when illumination is strong the output energy storage get up, with the assurance system, also can normally use a little less than illumination the time.The energy storage device that this photovoltaic generating system adopts is ferric phosphate lithium cell, and capacity is 12V/50AH.The superiority such as capacity is large, bulking value is light and handy, the life-span is long because it has, flash-over characteristic is good, environmental protection.Consider, the lead acid accumulator that the ratio of performance to price generally adopts at present is more than 4 times.This controller adopts the constant-current constant-voltage charging method, and the advantage of this kind of charging method is the combination of constant current charge and two kinds of methods of constant voltage charge.Start to adopt constant current charge, the excessive shortcoming that easily causes the damage of battery of the charging current while avoiding constant voltage charge just to start.Then adopt constant voltage charge, overcharge phenomenon and the very fast shortcoming of charging current utilance reduction of having avoided the constant current charge later stage to cause.
The charging circuit figure that battery charging management integrated chip CN3722 forms as shown in Figure 2.When below the VCC pin voltage meets during three conditions simultaneously: (1) is greater than low pressure and latchs threshold value; (2) be greater than cell voltage; (3) be not less than the maximum power point voltage set.The charger normal operation.The resistance pressure-dividing network that the voltage of battery-end forms by resistance R 6 and R7 feeds back to the FB pin, and CN3722 determines charged state according to the voltage of FB pin.If cell voltage lower than set constant voltage charge voltage 66.7% the time, charger enters the trickle charge pattern automatically, now charging current is 15% of set constant current charge electric current.When cell voltage be greater than set constant voltage charge voltage 66.7% the time, charger enters constant current charging mode, and the constant current charge electric current is arranged by the current sense resistor RCS be connected between CSP (charging current detection positive input terminal) pin and BAT (charging current detection negative input end) pin.When cell voltage continue to rise while approaching constant voltage charge voltage, charger enters the constant voltage charge pattern, and charging current reduces gradually, when charging current be reduced to set constant current charge electric current 9.5% the time, enter the charging done state, now charging current is zero.
Battery charging management integrated chip CN3722 adopts constant voltage method tracking solar battery maximum power point, so-called " MPPT maximum power point tracking " (Maximum Power Point Tracking, be called for short MPPT), it is exactly the generating voltage of detecting real-time solar panels, and follow the trail of ceiling voltage current value (VI), make system with maximum power output to charge in batteries.Maximum power point voltage is delivered to the MPPT pin after by two resistance R 8, R3 dividing potential drop, at the MPPT maximum power point tracking state, the MPPT pin voltage is modulated at 1.04V, and MPPT pin modulation voltage has the temperature coefficient of-0.4% ℃, very identical with the temperature coefficient of solar cell maximum power point voltage.The low-voltage latch cicuit monitoring input voltage of chip internal, when input voltage, during lower than 6V (representative value), internal circuit is turned off, and charger is not worked.
When the input voltage power down, battery charging management integrated chip CN3722 enters sleep pattern automatically, and internal circuit is turned off, and can reduce like this current drain of battery, prolongs standby time.
In order to monitor battery temperature, need between TEMP pin and GND pin, connect the thermistor R2 of the negative temperature coefficient of a 10k Ω.If battery temperature exceeds normal range (NR), charging process will be suspended, until battery temperature is returned in normal temperature range.The inner overvoltage comparator in addition of battery charging management integrated chip CN3722, when the BAT pin voltage due to load variations or to remove suddenly battery etc. former thereby while rising, when if the BAT pin voltage rises to 1.08 times of constant voltage charge voltage, the overvoltage comparator action, close the outer P channel MOS field-effect transistor of part, charger temporarily stops, until the BAT pin voltage is returned to below constant voltage charge voltage.
Battery charging management integrated chip CN3722 has two state indication pins,
(charged state indication pin) and
(charging finishes the indication pin).COM1, COM2, COM3 are the loop compensation input.
As shown in Figure 3, booster circuit adopts fixed frequency pulse-width modulation circuit TL494, transistor Q1, Q2, and the TL494 that field effect transistor Q3, Q4, transformer T1 and full-bridge rectification filter circuit form pushes away the formula of the exempting from electric power that boosts; The base stage of transistor Q1, Q2 connects respectively two built-in transistorized emitter E 2(pins 10 of fixed frequency pulse-width modulation circuit TL494), E1(pin 9), the emitter of transistor Q1, Q2 connects the g utmost point that correspondence meets field effect transistor Q3, Q4, the grounded collector of transistor Q1, Q2, the s utmost point ground connection of field effect transistor Q3, Q4; The extremely corresponding once end that meets transformer T1 of the d of field effect transistor Q3, Q4, the secondary termination full-bridge rectification filter circuit of transformer T1.
Transformer T1, realize that voltage changes the 320V pulse voltage into by the 12V pulse voltage.This pulse voltage becomes the 320V high-voltage dc voltage through current rectifying and wave filtering circuit.The operating frequency of transformer T1 is elected the 50KHz left and right as.When circuit is normal, two built-in transistor alternate conduction of TL494, the base stage that causes transistor Q1, Q2 in figure also therefore and alternate conduction, field effect transistor Q3 and Q4 be alternate conduction also, make like this transformer T1 be operated in the state of recommending, field effect transistor Q3 and Q4 be take frequency as the 50KHz alternate conduction, make the primary input terminal of transformer that the alternating current of 50KHz be arranged.Alternating component in polar capacitor C3 elimination 12V direct current, reduce input and disturb.Filter capacitor C1 can be taken as 2200uF.Current rectifying and wave filtering circuit is comprised of four rectifier diodes and a filter capacitor.Four rectifier diode D3～D6 are connected into the form of electric bridge, claim single phase bridge type rectifier circu.In bridge rectifier, capacitor C 4 eliminations the alternating component in the circuit, filtering value herein is 10uF.
The 50HZ pulse produces chip TL494 peripheral circuit as shown in Figure 4, the inverting input that 15 pin are chip TL494,16 is in-phase input end, circuit 15 pin voltages under normal circumstances should be output as low level a little more than 16 pin voltage guarantee error comparators, just can make two transistor normal operations in chip.Because built-in chip type 5V reference voltage source, load capacity is 10mA.So 15 pin voltages should be higher than 5V.The R4 of overtemperature protection is 200 Ω, and the voltage of 15 pin is that 6.22V is greater than 16 pin voltages.14 pin output reference voltages, because push-pull circuit is both-end output, therefore output control terminal 13 pin and 14 pin are connected together.12 pin are power end, connect outside 12V voltage.8,11 pin final stage transistor collectors, also connect external power supply herein.9,10 pins are for exporting the pulse control switch pipe of 50K.7 pin are earth terminal, and the external concussion resistance of 5,6 pin and electric capacity are for controlling output pulse frequency.4 pin are dead band control end while adding 0-3.3V voltage on it, can make deadline from 2% linear change to 100%, in the design for realizing overvoltage protection and the under-voltage protection of input.
Inverter circuit is comprised of four parts: inversion drive part, DC/AC conversion fraction, feedback fraction, liquid-crystal display section.
1, inverse changing driving circuit: the drive circuit of single-phase pure sine wave inverter adopts single-phase pure sine wave inverter special chip EG8010 as control chip, drives chip to adopt IR2110.The OSC1 of EG8010, the external 12MHz crystal oscillator of OSC2 pin, can realize all very little 50Hz or 60Hz pure sine waves of high accuracy, distortion and harmonic wave.The functions such as the integrated SPWM forcing function generator of this chip internal, dead-time control circuit, amplitude factor multiplier, soft starting circuit, protective circuit, LED alarm Presentation Function, fan control function, RS232 serial communication interface and 12832 serial liquid crystal driver module.
As shown in Figure 5, the pin PWMTYP of EG8010 chip arranges the PWM output type, and PWMTYP is that the output of positive polarity PWM type is applied to the dead band level for while low level occasion for " 0 ".EG8010 chip pin SPWMOUT1, SPWMOUT2, SPWMOUT3, SPWMOUT4 produce respectively four groups of SPWM and drive 2 IR2110, the high-end input of HIN(logic of receiving respectively them), the input of LIN(logic low side) pin, as shown in Figure 6.Wherein pin LO and pin HO alternately export low and high level, and by resistance rear drive four field effect transistor V1, V2, V3, V4 alternate conduction, IR2110 drives full-bridge circuit as shown in Figure 6.C2 in Fig. 6, D2 is respectively bootstrap capacitor and bootstrap diode, the filter capacitor that C6 is VCC.During supposing HO pin output low level, C2 has been charged to enough voltage VC1 ≈ VCC.When HIN is high level: the C2 electric discharge, at this moment C2 just is equivalent to a voltage source, thereby makes the V1 conducting.Because LIN and HIN are a pair of complementary input signals, so now LIN is low level, at this moment be gathered in the electric charge of V3 grid and source electrode in chip internal electric discharge over the ground rapidly, because making V3, the Dead Time impact turn-offed rapidly before V1 opens.When HIN is low level: the electric charge that at this moment is gathered in V1 grid and source electrode discharges rapidly V1 is turn-offed at chip internal.Be high level through of short duration Dead Time LIN, make V2 open-minded.VCC is rapidly the C2 makeup energy through bootstrap diode at the same time, and so circulation repeatedly.
2, DC/AC full bridge inverter: adopt the full-bridge inverting mode, as shown in Figure 7, power switch pipe (IRF840) V1, V3 and V2, V4 are anti-phase, 180 ° of V1 and V2 phase place mutual deviations, regulate the output pulse width of V1 and V2, the effective value of output AC voltage changes thereupon.Thereby produce the AC sine wave output by DC, produce the alternating voltage of 220V/50Hz.Because this circuit has the function that can make V3 and the common conducting of V4, thereby have continuous current circuit, even to inductive load, output voltage waveforms can not produce distortion yet.
3, feedback circuit
(1) as shown in Figure 5, Figure 8, it is by pin V that the Voltage Feedback of EG8010 chip is processed to the output voltage feedback circuit
fBmeasure the alternating voltage of inverter output, the voltage sampling feedback circuit need to be connected on the output of SPWM modulation brachium pontis inductance, circuit structure is as Fig. 7, the crest voltage and the sinusoidal wave crest voltage 3V of internal reference that measure feedback carry out error calculating, output voltage values is made to corresponding adjustment, and when output voltage raises, this pin voltage also increases, adjusting range factor multiplier coefficients after the internal circuit error amount calculates, realize reducing output voltage and reach the voltage stabilizing process; Otherwise, when the voltage decreases of this pin, chip can be made boosted output voltages.
(2) as shown in Figure 5, the current feedback 220V of output exchanged by 100K resistance is to the I of EG8010 for the output current feedback current
fBpin, the reference peaks threshold voltage of this pin inside is 0.5V, over-current detection delay time 600ms, when certain reason causes the high load current that arranges to exceed inverter of load current skin, EG8010 will export SPWMOUT1 ~ SPWMOUT4 to " 0 " or level"1" according to the state that arranges of pin PWMTYP, close all power MOSFETs, make output voltage arrive low level, main protection power MOSFET and load, once after entering overcurrent protection, EG8010 says after 16S to discharge and reopens power MOSFET tube and judge the load overcurrent situation again, the duration that power MOS pipe is opened in release is 100ms, the 100ms discharged judges the overcurrent event again in the time, if still there is the overcurrent event, EG8010 will close all power MOSFETs again makes output voltage arrive low level, again wait for the release of 16S, if the rear normal operation of release reaches EG8010 more than 1 minute and will remove the overcurrent event times, otherwise still exist after continuous release number of times accumulative total 5 times and normally do not move EG8010 and will thoroughly turn-off the output of SPWM module, need system to re-power rear release.
(3) as shown in Figure 5, Figure 9, the pin TFB of EG8010 chip is the working temperature of measuring inverter to the temperature detection feedback circuit, for overheat protector, detects.NTC thermistor RT1 and measuring resistance RF1 form a simple bleeder circuit, and partial pressure value changes along with temperature value and changes numerical value, thereby the large young pathbreaker of this voltage reflects that the size of NTC resistance obtains corresponding temperature value.It is 3380 that NTC selects 25 ℃ of corresponding resistance 10K(B constant values) thermistor; the excess temperature voltage of TFB pin is set in 4.3V; when overheat protector occurs when; EG8010 will export PWMOUT1～SPWMOUT4 to " 0 " or level"1" according to the state that arranges of pin PWMTYP; closing all power MOSFETs makes output voltage arrive low level; once after entering overheat protector; EG8010 will rejudge working temperature; if the voltage of TFB pin is lower than 4.0V; EG8010 will exit overheat protector, the inverter normal operation.
4, as shown in Figure 5, EG8010 supports three-wire type serial line interface 12832 LCD MODULE to liquid crystal display circuit, and the information such as voltage, frequency, temperature and electric current of this function realization demonstration inverter are observed to the user.EG8010 pin LCDCLK is serial ports 12832 LCD MODULE output terminal of clock, and LCDDI is serial ports 12832 liquid crystal display mode block instructions, data output end, and LCDEN is serial ports 12832 LCD MODULE Enable Pin outputs.
5, dead band time setting, as shown in Figure 5, the EG8010 chip has 300nS, 500nS, 1uS and tetra-Dead Times of 1.5us.The pin DT1 of EG8010 chip, DT0 controls Dead Time, and 4 kinds of Dead Times can be set, and " 00 " is the 300nS Dead Time, and " 01 " is the 500nS Dead Time, and " 10 " are the 1uS Dead Times, " 11 " are the 1.5us Dead Times.It is one of important parameter of MOS pipe that Dead Time is controlled, if cause the conducting simultaneously of upper and lower power MOS pipe and burn the metal-oxide-semiconductor phenomenon without Dead Time or too little meeting, if dead band too conference cause wave distortion and the power tube serious phenomenon of generating heat.
6, frequency setting, as shown in Figure 5, the EG8010 frequency mode is divided into fixed frequency modes and adjustable frequency pattern, and under the adjustable frequency pattern, EG8010 has only adopted the unipolarity modulation system, under the adjustable frequency pattern, needs pin MODSEL is connect to low level.Frequency mode is by pin FRQSEL1, and FRQSEL0 sets, and fixed frequency modes is output 50Hz frequency for " 00 ", and " 01 " is output 60Hz frequency.
7, warning output display, as shown in Figure 5, the external LED of EG8010 pin LEDOUT is the output of reporting to the police, output low level when fault occurs " 0 " is lighted LED.LED indication situation is: long bright representative is normal; Glimmer 2 times, go out 2 seconds, circulation always represents overcurrent; Glimmer 3 times, go out 2 seconds, circulation always represents overvoltage; Glimmer 4 times, go out 2 seconds, circulation always represents under-voltage.
The course of work: solar panel is charged to ferric phosphate lithium cell with the highest efficiency by the 5A polymorphic type battery charging management integrated chip CN3722 with MPPT maximum power point tracking (MPPT) function; while CN3722 is also inputted low-voltage and is latched; the battery temperature monitoring, the functions such as battery-end overvoltage protection and charged state indication.Storage battery utilize Three-end voltage stabilizer LM7812 and LM7805 respectively output dc voltage+12V and+5V, for DC load and other chip.The push-pull type booster circuit that the 12V direct current of storage battery forms through chip TL494 is boosted, then filtering, rectification, output 320V direct-flow steady voltage.After the main circuit that boosts conversion, Converting Unit adopts the EG8010 chip that carries dead band control to produce sinusoidal pulse width modulation (SPWM) signal to the IR2100 drive circuit, driving voltage type single-phase bridge inverter circuit carries out the DC-AC power conversion, finally by crossing the output filter powering load.The EG8010 chip is to overvoltage, under-voltage, overcurrent, the overheated protection, and external serial ports 12832 LCD MODULE show the information such as voltage, frequency, temperature and electric current of inverters.
Claims (4)
1. a photovoltaic intelligent controller; Comprise solar panel, the charger be connected with solar panel, the storage battery be connected with charger and the inverter be connected with storage battery; It is characterized in that: described charger adopts battery charging management integrated chip CN3722; Described storage battery connect Three-end voltage stabilizer LM7812 and LM7805 respectively output dc voltage+12V and+5V; Described inverter comprises booster circuit and inverter circuit; The 12V direct current of storage battery through booster circuit boost, filter rectification output 320V direct-flow steady voltage then; Described inverter circuit comprises EG8010 chip, IR2100 drive circuit and the DC/AC full bridge inverter be connected with booster circuit; The EG8010 chip produces the sinusoidal pulse width modulation signal to the IR2100 drive circuit, and the IR2100 drive circuit drives the DC/AC full bridge inverter to carry out the DC-AC power conversion; External serial ports 12832 LCD MODULE of EG8010 chip; The OSC1 of EG8010 chip, the external 12MHz crystal oscillator of OSC2 pin; The pin TFB of EG8010 chip connects temperature detection feedback circuit, pin V
fBconnect the output voltage feedback circuit, pin I
fBthe output current feedback circuit.
2. photovoltaic intelligent controller according to claim 1, it is characterized in that: described booster circuit adopts fixed frequency pulse-width modulation circuit TL494, transistor Q1, Q2, and the TL494 that field effect transistor Q3, Q4, transformer T1 and full-bridge rectification filter circuit form pushes away and exempts from the formula booster circuit; The base stage of transistor Q1, Q2 meets respectively two built-in transistorized emitter E 2 of fixed frequency pulse-width modulation circuit TL494, E1, the emitter of transistor Q1, Q2 connects the g utmost point that correspondence meets field effect transistor Q3, Q4, the grounded collector of transistor Q1, Q2, the s utmost point ground connection of field effect transistor Q3, Q4; The extremely corresponding once end that meets transformer T1 of the d of field effect transistor Q3, Q4, the secondary termination full-bridge rectification filter circuit of transformer T1.
3. photovoltaic intelligent controller according to claim 1, it is characterized in that: the EG8010 chip has 300nS, 500nS, 1uS and tetra-Dead Times of 1.5us.
4. photovoltaic intelligent controller according to claim 1, is characterized in that: the external LED of EG8010 chip pin LEDOUT.
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