CN103474586A - OLED device and manufacturing method thereof - Google Patents
OLED device and manufacturing method thereof Download PDFInfo
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- CN103474586A CN103474586A CN2013104626700A CN201310462670A CN103474586A CN 103474586 A CN103474586 A CN 103474586A CN 2013104626700 A CN2013104626700 A CN 2013104626700A CN 201310462670 A CN201310462670 A CN 201310462670A CN 103474586 A CN103474586 A CN 103474586A
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Abstract
The invention discloses an OLED device and a manufacturing method thereof. The OLED device comprises a substrate, a first electrode layer arranged on one surface of the substrate, a light-emitting layer, a first charge transfer layer arranged between the first electrode layer and the light-emitting layer, a second electrode layer and a second charge transfer layer arranged between the second electrode layer and the light-emitting layer. A nanometer concave-convex structure layer is arranged on the other surface of the substrate and provided with a first concave-convex structure of a quasi-periodic or non-periodic shape, and the refractive index of the first concave-convex structure changes in the direction of emergent light in a gradient mode. According to the manufacturing method of the OLED device, the external quantum extraction efficiency of the OLED device is effectively improved, the manufacturing process is simple, and the cost is low.
Description
Technical field
The present invention relates to OLED device technology field, be specifically related to a kind of OLED device and preparation method thereof.
Background technology
OLED device (Organic Light-Emitting Diode, Organic Light Emitting Diode) there is self luminous characteristic, adopt very thin coating of organic material and glass substrate, when electric current passes through, organic material will be luminous, (reach (more than 170 °), fast (the 1 μ m order of magnitude), low energy consumption of reaction time, can make large scale and bendable Panel light advantage, a new generation be considered to after CRT, LCD throws light on and Display Technique to have ultra-thin (plate thickness is less than 2mm), active illuminating, wide viewing angle.
The luminous efficiency of OLED device can be divided into its quantum efficiency, luminous efficiency and power efficiency.Wherein, quantum efficiency is the outwards number of photons and the ratio of injected electrons hole to quantity of emission of device.Quantum efficiency is divided into again internal quantum efficiency (internal quantum efficiency) and external quantum efficiency (external quantum efficiency).Application along with the New Phosphorus luminescent material, the internal quantum efficiency of OLED has approached 100%, yet the serious waveguiding effect caused due to the total reflection phenomenon that is subject to substrate/Air Interface and charge transport layer/luminescent layer interface, the outer quantum extraction efficiency of OLED can only reach 20% left and right usually, and this has limited the practical application of OLED to a great extent.For this reason, how to improve the OLED external quantum efficiency and become the focus in this field, research direction is also improved material from emphasis and is turned to the improvement device architecture to improve external quantum efficiency.
Usually, the existing method that improves external quantum efficiency mainly comprises substrate roughness, micro lens technology, and the sunken light of segment glass is offset at the back side that all is used in glass substrate.But these method complex operations, cost of manufacture is higher, and some light that also can send OLED exerts an influence, and causes the problems such as spectral drift and spectrum angle dependence.
Publication number is CN102484209A, the Chinese invention patent of applying for artificial SUMITOMO CHEMICAL company discloses a kind of organic electroluminescent device, make two-dimensional periodic structure in luminescent layer, thereby improve the light extraction efficiency of OLED, yet this patent has more defect: (1), when making two-dimensional periodic structure, its practicality be hard stamp, it is hard nanometer embossing, this technology is difficult to realize the accurate transfer of the following micro-nano structure of 10nm live width, the major defect of hard nanometer embossing is the destruction that can cause interfacial structure at moulding process, form stain, finally cause the OLED cut-in voltage to raise, shorten the OLED life-span, that is to say, this patent promotes the OLED light extraction efficiency and take and sacrifice the OLED life-span as cost, (2), the hard press mold when making, be subject on the one hand the restriction of breadth own, on the other hand, in knockout course, contact area is larger, is easier to be created between pressing mold and thing to be pressed surface adhesion occurs, and therefore hard nanometer embossing can't be realized the imprint process of large scale breadth, (3) this patent is refered in particular to periodic structure, and periodically the introducing of micro-nano structure easily causes color drift for OLED, and particularly for white light OLED, periodically optical grating construction easily causes dispersion and bands of a spectrum drift.
In addition, publication number is that the Chinese invention patent that CN102844904A, application people are U.S. 3M Innovative Properties Company discloses a kind of oled light extraction film with inner nanostructure and outside micro-structural, utilize nanostructure effectively to strengthen the method that light extracts, and effectively reduced brightness in light output and the angle inhomogeneities of color.But this employing light extracts the method that film improves the OLED light extraction efficiency and is subject to technique restriction itself, if make light extraction structures on less precision or larger breadth, will be relatively loaded down with trivial details, cost of manufacture is higher, and the operation cycle such as grows at the problem.
With the application approach the most prior art for of this association request people in first to file, the Chinese invention patent that publication number is CN103219476A, it specifically discloses a kind of organic electroluminescent LED and preparation method thereof, this manufacture method is by the soft stamping technique of nanometer, between the electron transfer layer and luminescent layer of OLED device, perhaps between hole transmission layer and luminescent layer, form paracycle or aperiodic light extraction structures, effectively improved the light extraction efficiency of OLED.In this patent, due to the press mold of the making press mold that is soft material, not only can reduce the critical size of imprinted pattern, and can also realize the stamp work of large format, simultaneously owing to having designed paracycle or aperiodic imprinted pattern, improve the OLED light extraction efficiency simultaneously, can not cause the drift of OLED luminescent spectrum.But along with present inventor's further experiment research is found, when light passes through the disclosed light extraction structures of this patent from device inside, existence due to refractive index difference, scattering can occur at the interface place between electron transfer layer and luminescent layer or between hole transmission layer and luminescent layer in light, and then make confined light can traverse in substrate, yet after light arrives in substrate, because air and substrate have larger refractive index difference equally, waveguiding effect is very strong, most of light still can be limited in substrate, thereby to cause the raising for the outer quantum extraction efficiency of OLED be more limited, and the manufacture craft that this patented technology employing arranges light extraction structures at the OLED device inside is comparatively complicated, cost is higher.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of OLED device and preparation method thereof, not only effectively improve the outer quantum extraction efficiency of OLED device, and production process is simple, cost is low.
To achieve these goals, technical scheme provided by the invention is as follows:
A kind of OLED device, comprise substrate, the first electrode layer on described substrate one surface, luminescent layer, the first charge transport layer between between described the first electrode layer and described luminescent layer, the second electrode lay, the second charge transport layer between described the second electrode lay and described luminescent layer, wherein, another surface of described substrate is provided with the nano concavo-convex structure sheaf, has on described nano concavo-convex structure sheaf and is the first nano concavo-convex structure changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index.
Preferably, interface between described the first charge transport layer and described luminescent layer is provided with light extraction structures, this light extraction structures comprises the second nano concavo-convex structure be arranged on described the first charge transport layer, with be arranged on described luminescent layer and with the complementary structure of described the second nano concavo-convex structure, wherein, described the second nano concavo-convex structure is and changes in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index.
Preferably, for just putting type OLED device, described the first charge transport layer is hole transmission layer, and described the second charge transport layer is electron transfer layer; For inverted OLED device, described the first charge transport layer is electron transfer layer, and described the second charge transport layer is hole transmission layer.
Preferably, described OLED device is individual layer or laminated construction.
Preferably, a kind of manufacture method of OLED device as above, wherein, its operating procedure comprises:
A10), make successively the first electrode layer, the first charge transport layer, luminescent layer, the second charge transport layer, the second electrode lay on substrate one surface, obtain preforming OLED device;
B10), each layer of structure of described preforming OLED device encapsulated;
C10), at another surface-coated ultra-violet curing glue-line of substrate;
D10), described ultra-violet curing glue-line being carried out to the soft imprint process of nanometer processes, obtain the nano concavo-convex structure sheaf, have on described nano concavo-convex structure sheaf and be the first nano concavo-convex structure changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index;
E10), complete the making of OLED device.
Preferably, a kind of manufacture method of OLED device as above, wherein, its operating procedure comprises:
A20), at substrate one surface-coated ultra-violet curing glue-line;
B20), described ultra-violet curing glue-line being carried out to the soft imprint process of nanometer processes, obtain the nano concavo-convex structure sheaf, have on described nano concavo-convex structure sheaf and be the first nano concavo-convex structure changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index;
C20), make successively the first electrode layer, the first charge transport layer, luminescent layer, the second charge transport layer, the second electrode lay on another surface of substrate;
D20), complete the making of OLED device.
Preferably, the soft imprint process of described nanometer specifically comprises:
S1), prepare the two-dimensional nano concaveconvex structure in substrate, the formation impression block by any one technique in laser direct-writing or holography or electron beam deposition or evaporation sputter or chemical synthesis or self-assembling method;
S2), the two-dimensional nano concaveconvex structure in impression block is transferred on soft material to formation impression die;
S3), adopt the impression die to be impressed, solidify described ultra-violet curing glue-line, the two-dimensional nano concaveconvex structure on the impression die is transferred on the ultra-violet curing glue-line;
S4), the demoulding, form the nano concavo-convex structure sheaf on substrate, have on described nano concavo-convex structure sheaf and be the first nano concavo-convex structure changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index.
Preferably, at described step S3) in, adopt volume to volume or flat to flat stamping technique, and adopt ultraviolet lighting to be cured described ultra-violet curing glue-line.
Preferably, a kind of manufacture method of OLED device as above, wherein, its operating procedure comprises:
A30), make successively the first electrode layer on substrate one surface, be the first charge transport layer of colloidal state or half colloidal state, and at another surface-coated ultra-violet curing glue-line of described substrate;
B30), described ultra-violet curing glue-line and described the first charge transport layer are carried out to the soft imprint process processing of nanometer simultaneously, obtain respectively the nano concavo-convex structure sheaf and be the second nano concavo-convex structure changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index, having on described nano concavo-convex structure sheaf and be the first nano concavo-convex structure changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index;
C30), make luminescent layer on described the first charge transport layer, at least part of infiltration of described luminescent layer is to described the second nano concavo-convex structure, the complementary structure of formation and the second nano concavo-convex structure, make on the interface between the first charge transport layer and luminescent layer and form light extraction structures;
D30), make successively the second charge transport layer, the second electrode lay on described luminescent layer;
E30), complete the making of OLED device.
Preferably, the soft imprint process of described nanometer specifically comprises:
S1 '), by any one technique in laser direct-writing or holography or electron beam deposition or evaporation sputter or chemical synthesis or self-assembling method, prepare the two-dimensional nano concaveconvex structure in substrate, form respectively the first impression block and the second impression block;
S2 '), the two-dimensional nano concaveconvex structure in the first impression block and the second impression block is transferred to respectively on soft material to corresponding first making ide Renhe the second impression die that forms;
Adopt first making ide Renhe the second impression die described ultra-violet curing glue-line and described the first charge transport layer to be impressed, solidify simultaneously, the two-dimensional nano concaveconvex structure in first making ide Renhe the second impression die is transferred to respectively on ultra-violet curing glue-line and the first charge transport layer S3 '), respectively;
S4 '), the demoulding, form respectively the nano concavo-convex structure sheaf and be the second nano concavo-convex structure changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index on substrate and the first charge transport layer, having on described nano concavo-convex structure sheaf and be the first nano concavo-convex structure changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index.
Preferably, at described step S3 ') in, adopt volume to volume or flat to flat stamping technique, and adopt ultraviolet lighting to be cured, to adopt heat treated to be cured described the first charge transport layer to described ultra-violet curing glue-line.
Preferably, described soft material is selected from any one in dimethione, polystyrene acrylic acid or PFPE.
The present invention proposes, on another surface of substrate, the nano concavo-convex structure sheaf is set, there is the paracycle of being or aperiodicity shape on the nano concavo-convex structure sheaf, and the first nano concavo-convex structure that its refractive index changes in gradient along the emergent light direction, make the light in substrate to reflect smoothly along this first nano concavo-convex structure, and then effectively improved the outer quantum extraction efficiency of OLED device, and can not cause dispersion, particularly for the white light OLED device, can not cause dispersion and bands of a spectrum drift, the present invention simultaneously is when concrete the making, can before each layer of structure fabrication of OLED device or after making, carry out, substantially do not need the existing manufacture craft of OLED device is changed, therefore making work of the present invention is simple, cost is low, the present invention further optimally, in order further effectively to improve the outer quantum extraction efficiency of OLED device, on the interface between the first charge transport layer and luminescent layer, light extraction structures is set, this light extraction structures comprises the second nano concavo-convex structure be arranged on the first charge transport layer, with be arranged on luminescent layer, and the complementary structure with the second nano concavo-convex structure, wherein, the second nano concavo-convex structure is paracycle or aperiodicity shape, and its refractive index changes in gradient along the emergent light direction, therefore, when light passes through light extraction structures from device inside, because the second nano concavo-convex structure wherein and the refractive index of complementary structure thereof change in gradient along the emergent light direction, scattering can occur at the interface place of the first charge transport layer and luminescent layer in light, make most of light can traverse in substrate, by being arranged in another surperficial nano concavo-convex structure sheaf of substrate, make the light of substrate the first nano concavo-convex structure on it to reflect smoothly again, and then further effectively improved the outer quantum extraction efficiency of OLED device.
The present invention further specifically optimally, adopt soft nano-imprint process to prepare the nano concavo-convex structure, therefore can not cause any destruction to interfacial structure in moulding process, do not affect cut-in voltage and the life-span of OLED device, also can realize high accuracy, large format impression simultaneously, realize the low cost, large tracts of land, mass of OLED device, softly change production;
The present invention further especially optimally, ultra-violet curing glue-line and the first charge transport layer are carried out to the soft imprint process processing of nanometer simultaneously, obtain respectively nano concavo-convex structure sheaf and the second nano concavo-convex structure, realizing the maximized while of OLED device light extraction efficiency, greatly improved soft imprint process treatment effeciency, so decrease fabrication cycle of the present invention.
The accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, below will the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described, apparently, the accompanying drawing the following describes is only some embodiment that put down in writing in the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Accompanying drawing 1 is the structural representation of OLED device 100 in the present invention's the first embodiment;
Accompanying drawing 2 is structural representations of OLED device 100 ' in the present invention's the second embodiment;
Accompanying drawing 3 is step block diagrams of the soft imprint process of nanometer under the specific embodiment of the invention;
Accompanying drawing 4 is structural representations when under the specific embodiment of the invention, in the soft imprint process of nanometer, the nano concavo-convex structure sheaf impresses;
Accompanying drawing 5 is structural representations when under the specific embodiment of the invention, in the soft imprint process of nanometer, the second nano concavo-convex structure impresses;
Accompanying drawing 6 is OLED device 100 ' intermediate structure schematic diagrames when manufacturing process in the present invention's the second embodiment;
Accompanying drawing 7 is structural representations when in the present invention's the second embodiment, OLED device 100 ' nano concavo-convex structure sheaf and second nano concavo-convex structure in manufacturing process impresses simultaneously;
Accompanying drawing 8 is the structural representations after Fig. 7 completes impression;
Accompanying drawing 9 is voltage-to-current density curve comparison diagrams of OLED device in the specific embodiment of the invention and prior art;
Accompanying drawing 10 is luminescent spectrum comparison diagrams of OLED device in the specific embodiment of the invention and prior art;
Accompanying drawing 11 is light intensity-current efficiency curve comparison diagram of the Chinese invention patent of OLED device and CN103219476A in the specific embodiment of the invention and prior art.
Embodiment
The embodiment of the invention discloses a kind of OLED device, comprise substrate, the first electrode layer on substrate one surface, luminescent layer, the first charge transport layer between between the first electrode layer and luminescent layer, the second electrode lay, the second charge transport layer between the second electrode lay and luminescent layer, wherein, another surface of substrate is provided with the nano concavo-convex structure sheaf, has on the nano concavo-convex structure sheaf and is the first nano concavo-convex structure changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index.
The embodiment of the invention also discloses the manufacture method of OLED device as above, wherein, its operating procedure comprises:
A10), make successively the first electrode layer, the first charge transport layer, luminescent layer, the second charge transport layer, the second electrode lay on substrate one surface, obtain preforming OLED device;
B10), each layer of structure of preforming OLED device encapsulated;
C10), at another surface-coated ultra-violet curing glue-line of substrate;
D10), the ultra-violet curing glue-line carried out to the soft imprint process of nanometer process, obtain the nano concavo-convex structure sheaf, have on the nano concavo-convex structure sheaf and be the first nano concavo-convex structure changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index;
E10), complete the making of OLED device.
The embodiment of the invention also discloses the manufacture method of OLED device as above, wherein, its operating procedure comprises:
A20), at substrate one surface-coated ultra-violet curing glue-line;
B20), the ultra-violet curing glue-line carried out to the soft imprint process of nanometer process, obtain the nano concavo-convex structure sheaf, have on the nano concavo-convex structure sheaf and be the first nano concavo-convex structure changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index;
C20), make successively the first electrode layer, the first charge transport layer, luminescent layer, the second charge transport layer, the second electrode lay on another surface of substrate;
D20), complete the making of OLED device.
The embodiment of the present invention proposes, on another surface of substrate, the nano concavo-convex structure sheaf is set, there is the paracycle of being or aperiodicity shape on the nano concavo-convex structure sheaf, and the first nano concavo-convex structure that its refractive index changes in gradient along the emergent light direction, make the light in substrate to reflect smoothly along this first nano concavo-convex structure, and then effectively improved the outer quantum extraction efficiency of OLED device, and can not cause dispersion, particularly for the white light OLED device, can not cause dispersion and bands of a spectrum drift, the embodiment of the present invention is when concrete the making simultaneously, can before each layer of structure fabrication of OLED device or after making, carry out, substantially do not need the existing manufacture craft of OLED device is changed, therefore the making work of the embodiment of the present invention is simple, cost is low, the embodiment of the present invention further optimally, in order further effectively to improve the outer quantum extraction efficiency of OLED device, on the interface between the first charge transport layer and luminescent layer, light extraction structures is set, this light extraction structures comprises the second nano concavo-convex structure be arranged on the first charge transport layer, with be arranged on luminescent layer, and the complementary structure with the second nano concavo-convex structure, wherein, the second nano concavo-convex structure is paracycle or aperiodicity shape, and its refractive index changes in gradient along the emergent light direction, therefore, when light passes through light extraction structures from device inside, because the second nano concavo-convex structure wherein and the refractive index of complementary structure thereof change in gradient along the emergent light direction, scattering can occur at the interface place of the first charge transport layer and luminescent layer in light, make most of light can traverse in substrate, by being arranged in another surperficial nano concavo-convex structure sheaf of substrate, make the light of substrate the first nano concavo-convex structure on it to reflect smoothly again, and then further effectively improved the outer quantum extraction efficiency of OLED device.
The embodiment of the present invention further specifically optimally, adopt soft nano-imprint process to prepare the nano concavo-convex structure, therefore can not cause any destruction to interfacial structure in moulding process, do not affect cut-in voltage and the life-span of OLED device, also can realize high accuracy, large format impression simultaneously, realize the low cost, large tracts of land, mass of OLED device, softly change production.
The embodiment of the present invention further especially optimally, ultra-violet curing glue-line and the first charge transport layer are carried out to the soft imprint process processing of nanometer simultaneously, obtain respectively nano concavo-convex structure sheaf and the second nano concavo-convex structure, realizing the maximized while of OLED device light extraction efficiency, greatly improved soft imprint process treatment effeciency, so decrease fabrication cycle of the present invention.
In order to make those skilled in the art person understand better the technical scheme in the present invention, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making under the creative work prerequisite the every other embodiment obtained, should belong to the scope of protection of the invention.
Shown in Figure 1, Fig. 1 is the structural representation of OLED device 100 in the present invention's the first embodiment.In this first embodiment, the OLED device is single layer structure, comprises substrate 110, the first electrode layer 120 on substrate 110 1 surfaces, luminescent layer 140, the first charge transport layer 130 between between the first electrode layer 120 and luminescent layer 140, the second electrode lay 160, the second charge transport layer 150 between the second electrode lay 160 and luminescent layer 140; Wherein, substrate 110 another surfaces are provided with nano concavo-convex structure sheaf 170, have on nano concavo-convex structure sheaf 170 and be the first nano concavo-convex structure 171 changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index, particularly, the first nano concavo-convex structure 171 can be one dimension shape or two-dimensional shapes, preferably, in the present embodiment, the first nano concavo-convex structure 171 is two-dimensional shapes; For just putting type OLED device, the first charge transport layer 130 is hole transmission layer, and the second charge transport layer 150 is electron transfer layer; For inverted OLED device, the first charge transport layer 130 is electron transfer layer, and the second charge transport layer 150 is hole transmission layer.
The type of just the putting OLED device of single layer structure of the above-mentioned execution mode of the present invention of take is example, and the first charge transport layer 130 is hole transmission layer, and the second charge transport layer 150 is electron transfer layer, and the operating procedure of its manufacture method comprises:
A10), make successively the first electrode layer 120, hole transmission layer 130, luminescent layer 140, electron transfer layer 150, the second electrode lay 160 on substrate 110 1 surfaces, obtain preforming OLED device, particularly, substrate 110 is transparent or semitransparent, its material can be hard, as simple glass, quartz glass etc.; Can be also soft, as PET, PEN film etc.; The first electrode layer 120 can be the transparent inorganic compound, as ITO, IZO etc., can be also semi-transparent metals, as Al, Ag, Au etc., and can adopt sputter, evaporation or other known methods to make shaping; The material of hole transmission layer 130 can be PEDOT:PSS, ZnO or TiO2, can certainly be other well known materials, and can adopt spin coating, spraying, a painting or other known methods to make shaping; The material of luminescent layer 140 can adopt the disclosed any materials of prior art, and can adopt spin coating, spraying, a painting or other known methods to make shaping, can certainly adopt vacuum thermal evaporation or sputtering method to make shaping; The material of electron transfer layer 150 can adopt the disclosed any materials of prior art, and can adopt spin coating, spraying, drip painting or other known methods making shaping, also can adopt vacuum thermal evaporation to make is shaped, more preferably, in the present embodiment, in order to be beneficial to the charge transport of electron transfer layer 150, electron transfer layer 150 can also comprise (scheming not shown) such as functional layers such as electron injecting layers; The material of the second electrode lay 160 can adopt the disclosed any materials of prior art, and can adopt vacuum thermal evaporation, sputter or other known methods to make shaping.
Specifically preferably, in the present embodiment, step a10), the concrete operation step of preforming OLED device is as follows:
Using simple glass as substrate 110, then sputter layer of transparent conductive oxide ito thin film, this ito thin film is anode as the first electrode layer 120();
The glass substrate that is coated with ito thin film is carried out to ultrasonic cleaning with acetone, absolute ethyl alcohol and deionized water as solvent respectively, complete after cleaning and put into drying box and dry, and after the glass substrate that is coated with ito thin film after drying is carried out to ultraviolet+ozone preliminary treatment, be placed on the sucker of spin coating instrument, then drip appropriate PEDOT:PSS solution on ito thin film, spin coating under the rotating speed of 2000rpm, form hole transmission layer 130;
The above-mentioned glass substrate that is manufactured with hole transmission layer 130, ito thin film is transferred in the vacuum evaporation instrument, by the vacuum degree control of vacuum cavity 3 * 10
-6about Torr, with the NPB layer of the speed evaporation 40nm of 0.15nm/sec, then control with the concentration of 8wt% CBP:Ir (PPy) 2 (acac) layer that evaporation 20nm is thick, as the luminescent layer 140 of present embodiment;
With the TPBi layer of the speed evaporation 40nm of 0.15nm/sec, this TPBi layer is as electron transfer layer 150; Then with the LiF layer of the speed evaporation 0.5nm of 0.01nm/sec, this LiF layer is not as electron injecting layer (figure specifically illustrates); Finally, the aluminium (Al) of deposition 100nm is negative electrode as the second electrode lay 160(), thus preforming OLED device obtained.
B10), take out preforming OLED device, and each layer of structure of preforming OLED device encapsulated, effectively guarantee that each layer of structure of preforming OLED device is not damaged in moulding process;
C10), at substrate 110 another surface-coated ultra-violet curing glue-line 170a;
D10), ultra-violet curing glue-line 170a being carried out to the soft imprint process of nanometer processes, obtain nano concavo-convex structure sheaf 170, have on nano concavo-convex structure sheaf 170 and be the first nano concavo-convex structure 171 changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index;
E10), complete the making of OLED device.
Natch, present embodiment can also adopt other manufacture methods, and its operating procedure comprises:
A20), at substrate 110 1 surface-coated ultra-violet curing glue-line 170a;
B20), ultra-violet curing glue-line 170a being carried out to the soft imprint process of nanometer processes, obtain nano concavo-convex structure sheaf 170, have on nano concavo-convex structure sheaf 170 and be the first nano concavo-convex structure 171 changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index;
C20), on substrate 110 another surfaces, make successively the first electrode layer 120, hole transmission layer 130, luminescent layer 140, electron transfer layer 150, the second electrode lay 160, concrete manufacture craft can be referring to above-mentioned steps a10), no longer carry out word at this and repeat;
D20), complete the making of OLED device.
The embodiment of the present invention is carried out the soft imprint process processing of nanometer owing to adopting to the ultra-violet curing glue-line 170a that is positioned at substrate 110 surfaces, therefore in the specific implementation, both can after the making that completes each layer of structure of OLED device, make again nano concavo-convex structure sheaf 170, can certainly before the making of carrying out each layer of structure of OLED device, make in advance nano concavo-convex structure sheaf 170, except the process sequence difference, the technique effect that they bring is identical, do not need the manufacture craft of existing each layer of structure of OLED device is changed, therefore making work is simple, cost is low, those skilled in the art can specifically select according to the actual requirements.
Shown in Figure 3, specifically preferably, in the present embodiment, above-mentioned steps d10) or step b20) ultra-violet curing glue-line 170a carried out to the concrete operation step that the soft imprint process of nanometer processes comprise:
S1), prepare the two-dimensional nano concaveconvex structure by any one technique in laser direct-writing or holography or electron beam deposition or evaporation sputter or chemical synthesis or self-assembling method in substrate, form impression block, particularly, the material of this substrate can be any one in quartz, silicon, nickel, carbon steel, carborundum, Al-Doped ZnO, Merlon, polyvinyl chloride or polybutyl methacrylate, preferably, in the present embodiment, the material of substrate is quartzy;
S2), the two-dimensional nano concaveconvex structure in impression block is transferred on soft material, form impression die 180, particularly, soft material is selected from any one in dimethione, polystyrene acrylic acid or PFPE;
S3), shown in Figure 4, adopt 180 couples of ultra-violet curing glue-line 170a of impression die to be impressed, solidify, two-dimensional nano concaveconvex structure 180a on impression die 180 is transferred on ultra-violet curing glue-line 170a, specifically preferably, adopt volume to volume or flat to flat stamping technique, and adopt ultraviolet lighting to be cured the ultra-violet curing glue-line, especially, when adopting the stamping technique of volume to volume, above-mentioned impression die 180 is fixed on pressure roller, ultra-violet curing glue-line 170a is carried out to the soft impression of nanometer of volume to volume, solidify, two-dimensional nano concaveconvex structure 180a on impression die 180 is transferred on ultra-violet curing glue-line 170a.Due to the stamping technique of this volume to volume when the impression, contacting between impression die 180 and thing to be pressed surface is that line contacts, can avoid flat to demoulding difficulty in the blind impression technology, the impression breadth is little waits restriction, thereby further improves make efficiency and the product quality of OLED device in the present embodiment.
S4), the demoulding, form nano concavo-convex structure sheaf 170 on substrate 110, have on nano concavo-convex structure sheaf 170 and be the first nano concavo-convex structure 171 changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index, wherein, the first nano concavo-convex structure 171 is two-dimensional shapes, be 200nm its paracycle, groove depth is 80nm, natch, in other embodiments, the relevant design parameter of the first nano concavo-convex structure 171 can be selected according to the actual requirements obtains the first different nano concavo-convex structures, and the present invention does not do concrete restriction.
In the soft imprint process of the nanometer of present embodiment, employing impresses ultra-violet curing glue-line 170a, after ultra-violet curing, can complete impression, technique is simple, convenient, be further, because ultra-violet curing technique is simple, do not need heating process, avoid the negative effect that may bring each layer of structural behaviour in the OLED device due to heating, natch, the less preferred execution mode as the present invention, also can be liquid by applying on substrate, the material layer of half colloidal state or colloidal state, and in the soft imprint process of nanometer, to this liquid state, half colloidal state or colloidal materials layer are impressed, hot curing is processed, two-dimensional nano concaveconvex structure 180a on impression die 180 is transferred on this curing material layer, concrete material can be equally referring to soft material herein.
The operating procedure of the inverted OLED device manufacture method of present embodiment can be fully with reference to above-mentioned operating procedure of just putting type OLED device, the applicant believes on above-mentioned technical foundation, those skilled in the art can carry out concrete implementation and operation fully according to the actual requirements, and therefore no longer concrete expansion repeats in this article.
Natch, in other embodiments, the OLED device can be laminated construction, and concrete structure distributes refer to this association request people one in first to file, and the Chinese invention patent that publication number is CN103219476A is in the correlation technique content of [0063] section, its specification; Natch, other execution modes of the present invention can also obtain the better execution mode of implementation result in conjunction with other optimization layer structures or manufacture craft, within these all belong to protection scope of the present invention.
Shown in Figure 2, Fig. 2 is the structural representation of OLED device 100 ' in the present invention's the second embodiment.In this second embodiment, all the other structures are identical with above-mentioned the first embodiment, difference only is: the interface between the first charge transport layer 130 and luminescent layer 140 is provided with light extraction structures 190, this light extraction structures 190 comprises the second nano concavo-convex structure 191 be arranged on the first charge transport layer 130, with be arranged on luminescent layer 140 and with the complementary structure of the second nano concavo-convex structure 191, wherein, the second nano concavo-convex structure 191 is and changes in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index.
The originally type of just the putting OLED device of the single layer structure of above-mentioned execution mode of take is example, the first charge transport layer 130 is hole transmission layer, the second charge transport layer 150 is electron transfer layer, all the other manufacture crafts are with above-mentioned the first embodiment, difference only is step a10) in the manufacture craft of preforming OLED device, specific as follows:
Using simple glass as substrate 110, then sputter layer of transparent conductive oxide ito thin film, this ito thin film is anode as the first electrode layer 120();
The glass substrate that is coated with ito thin film is used respectively to acetone, absolute ethyl alcohol and deionized water carry out ultrasonic cleaning as solvent, complete after cleaning and put into drying box and dry, and after the glass substrate that is coated with ito thin film after drying is carried out to ultraviolet+ozone preliminary treatment, be placed on the sucker of spin coating instrument, then drip appropriate PEDOT:PSS solution on ito thin film, under the rotating speed of 2000rpm, spin coating 40s forms the PEDOT:PSS film (as hole transmission layer 130) that is colloidal state or half colloidal state, this PEDOT:PSS film is carried out to the soft imprint process of nanometer to be processed, finally on hole transmission layer 130, form the second nano concavo-convex structure 191, particularly, the second nano concavo-convex structure 191 can be one dimension shape or two-dimensional shapes, preferably, in the present embodiment, the second nano concavo-convex structure 191 is two-dimensional shapes, further particularly, in the present embodiment, the concrete operation step that this PEDOT:PSS film is carried out to the soft imprint process processing of nanometer is:
Step S2 in above-mentioned the first embodiment of reference) make and obtain impressing die 180 ', more specifically, the concrete making step of impression die 180 ' can also be referring to of this association request people in first to file, the Chinese invention patent that publication number is CN103219476A is in the correlation technique content of its specification [0054] Duan Zhi [0058] section and [0065] section, wherein [0058] section described soft impression block of this patent and [0065] section described PDMS template are the described impression die 180 ' of present embodiment, present embodiment is no longer carried out concrete the expansion and is repeated, further particularly, in the present embodiment, the concrete making step of impression die 180 ' adopts the correlation technique content of [0065] section of CN103219476A patent specification.
Shown in Figure 5, using impression die 180 ' obtained above is smooth, be covered on the PEDOT:PSS film (as hole transmission layer 130) that is colloidal state or half colloidal state, with certain pressure impression 3min, and after under the air ambient of 120 ℃, annealing 20min realizes hot curing, the demoulding, two-dimensional nano concaveconvex structure 180a ' on final impression die 180 ' transfers on hole transmission layer 130, forming paracycle on hole transmission layer 130 is 200nm, the second nano concavo-convex structure 191 that groove depth is 80nm, this the second nano concavo-convex structure 191 is paracycle or aperiodicity shape, and its refractive index changes in gradient along the emergent light direction, operating procedure also can be referring to of this association request people in first to file more specifically, the Chinese invention patent that publication number is CN103219476A is in the correlation technique content of [0059] section, its specification, [0059] section described soft impression block of this patent is the described impression die 180 ' of present embodiment, described the first transport layer is the described hole transmission layer 130 of present embodiment.
The above-mentioned glass substrate that is manufactured with hole transmission layer 130, ito thin film is transferred in the vacuum evaporation instrument, by the vacuum degree control of vacuum cavity 3 * 10
-6the Torr left and right, NPB layer with the speed evaporation 40nm of 0.15nm/sec, then control with the concentration of 8wt% CBP:Ir (PPy) 2 (acac) layer that evaporation 20nm is thick, luminescent layer 140 as present embodiment, at least part of infiltration of luminescent layer 140 is to the second nano concavo-convex structure 191 of above-mentioned hole transmission layer 130 simultaneously, the complementary structure of formation and the second nano concavo-convex structure 191, make on the interface between hole transmission layer 130 and luminescent layer 140 and form light extraction structures 190;
With the TPBi layer of the speed evaporation 40nm of 0.15nm/sec, this TPBi layer is as electron transfer layer 150; Then with the LiF layer of the speed evaporation 0.5nm of 0.01nm/sec, this LiF layer is not as electron injecting layer (figure specifically illustrates); Finally, the aluminium (Al) of deposition 100nm is negative electrode as the second electrode lay 160(), thus preforming OLED device obtained.
All the other operating procedures of present embodiment are all identical with above-mentioned the first embodiment.
Further specifically preferably, the operating procedure of the manufacture method of the OLED device 100 ' of present embodiment is as follows:
A30), shown in Figure 6, make successively the first electrode layer 120 on substrate 110 1 surfaces, be the hole transmission layer 130 of colloidal state or half colloidal state, and at substrate 110 another surface-coated ultra-violet curing glue-line 170a;
B30), refer to shown in Fig. 7 and Fig. 8, ultra-violet curing glue-line 170a and hole transmission layer 130 are carried out to the soft imprint process processing of nanometer simultaneously, obtain respectively nano concavo-convex structure sheaf 170 and be the second nano concavo-convex structure 191 changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index, having on nano concavo-convex structure sheaf 170 and be the first nano concavo-convex structure 171 changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index;
C30), make luminescent layer 140 on hole transmission layer 130, in at least part of infiltration to the second nano concavo-convex structure 191 of luminescent layer 140, form the complementary structure with the second nano concavo-convex structure 191, make that on the interface between hole transmission layer 130 and luminescent layer 140, formation light extraction structures 190(can be shown in Figure 2);
D30), make successively electron transfer layer 150, the second electrode lay 160 on luminescent layer 140;
E30), complete the making of OLED device 100 '.
Wherein, the production process of concrete structure can, with foregoing and the relevant drawings of this second embodiment, no longer illustrate at this.
At step b30) in, the soft imprint process of nanometer specifically comprises:
S1 '), by any one technique in laser direct-writing or holography or electron beam deposition or evaporation sputter or chemical synthesis or self-assembling method, prepare the two-dimensional nano concaveconvex structure in substrate, form respectively the first impression block and the second impression block;
S2 '), by the two-dimensional nano concaveconvex structure in the first impression block and the second impression block, transfer to respectively on soft material, the corresponding first impression die that forms (can adopt the described impression die 180 of the first embodiment, hereinafter adopt same reference numerals) and the second impression die (can adopt the described impression die 180 ' of the first embodiment, hereinafter adopt same reference numerals);
S3 '), adopt respectively the first impression die 180 and the second impression die 180 ' ultra-violet curing glue-line 170a and hole transmission layer 130 to be impressed simultaneously, solidify, two-dimensional nano concaveconvex structure in the first impression die 180 and the second impression die 180 ' is transferred to respectively on ultra-violet curing glue-line 170a and hole transmission layer 130, particularly, adopt volume to volume or flat to flat stamping technique, further preferably, with above reason is described, in the present embodiment, adopt the stamping technique of volume to volume, please specifically shown in Figure 7, the first impression die 180 and the second impression die 180 ' are separately fixed on pressure roller (Fig. 7 does not carry out mark), by band impression thing obtained above, (Fig. 7 does not carry out mark, and its position signal during only for stamp work, as the other guide implication, do not limit) with from left to right or direction from right to left carry out the displacement transmission, make the first impression die 180 and the second impression die 180 ' that are positioned at this band impression thing below and top carry out respectively the rotation of rightabout (arrow as shown in Figure 7) on corresponding pressure roller, and then make the first impression die 180 and the second impression die 180 ' realize respectively the soft impression of nanometer to ultra-violet curing glue-line 170a and hole transmission layer 130, and adopt ultraviolet lighting to be cured ultra-violet curing glue-line 170a, adopt heat treated to be cured hole transmission layer 130,
S4 '), the demoulding, shown in Figure 8, form respectively nano concavo-convex structure sheaf 170 and be the second nano concavo-convex structure 191 changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index on substrate 110 and hole transmission layer 130, having on nano concavo-convex structure sheaf 170 and be the first nano concavo-convex structure 171 changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index.
Equally, concrete production process, as impression block, impression die etc., all can, with foregoing and the relevant drawings of this second embodiment, in order to save the word length, no longer illustrate at this.
Present embodiment adopts carries out the soft imprint process processing of nanometer to ultra-violet curing glue-line 170a and hole transmission layer 130 simultaneously, obtain respectively nano concavo-convex structure sheaf 170 and the second nano concavo-convex structure 191, realizing 100 ' the maximized while of light extraction efficiency of OLED device, greatly improved soft imprint process treatment effeciency, and then decrease fabrication cycle of the present invention, belong to more preferred embodiment.
Natch, just more preferred embodiment, those skilled in the art can real needs select concrete production order fully to the above-mentioned execution mode of the present invention when being made, and these all belong to claim protection range of the present invention.
It should be noted that, the concaveconvex shape of the second nano concavo-convex structure 191 shown in the first nano concavo-convex structure 171 shown in present specification Fig. 4 and Fig. 5 is technology contents not as limiting to the invention all; Further particularly, the impression die 180 and 180 ' that the first nano concavo-convex structure 171 that the above-mentioned execution mode of the present invention is related and the second nano concavo-convex structure 191 adopt respectively while making can be exchanged, natch, those skilled in the art can carry out specifically to arrange the concaveconvex shape of the first nano concavo-convex structure 171 and the second nano concavo-convex structure 191 fully according to the actual requirements, and the present invention does not specifically limit this.
The present invention in the specific implementation, can also obtain having the embodiment of different light extraction efficiencies by concaveconvex shape, paracycle and the groove depth of optimizing the first nano concavo-convex structure 171 and the second nano concavo-convex structure 191.
Please, respectively referring to shown in Fig. 9 and Figure 10, Fig. 9 is the voltage-to-current density curve comparison diagram of OLED device in the specific embodiment of the invention and prior art, and Figure 10 is the luminescent spectrum comparison diagram of OLED device in the specific embodiment of the invention and prior art.From Fig. 9 and Figure 10, can obviously find out, the nano concavo-convex structure sheaf 170 of setting of the present invention and light extraction structures 190 can cause negative effect to the electric property of OLED device hardly, also can not cause the problems such as dispersion and bands of a spectrum drift.
Please further shown in Figure 11, Figure 11 is the light intensity-current efficiency curve comparison diagram of the Chinese invention patent of OLED device and CN103219476A in the specific embodiment of the invention and prior art.From Fig. 8, can obviously learn, the OLED device light extraction efficiency of the present invention's the second embodiment obviously is better than the first embodiment, the OLED device light extraction efficiency of the first embodiment equates substantially with the light extraction efficiency of CN103219476A, but as mentioned above as this patent, realizing improving under the prerequisite of essentially identical light extraction efficiency, the OLED element manufacturing operation of this first embodiment is simpler with respect to CN103219476A, easy to operate and cost is lower, and the OLED device light extraction efficiency of the first embodiment is much higher than OLED device in the prior art without nano concavo-convex structure.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned example embodiment, and in the situation that do not deviate from spirit of the present invention or essential characteristic, can realize the present invention with other concrete form.Therefore, no matter from which point, all should regard embodiment as exemplary, and be nonrestrictive, scope of the present invention is limited by claims rather than above-mentioned explanation, therefore is intended to include in the present invention dropping on the implication that is equal to important document of claim and all changes in scope.Any Reference numeral in claim should be considered as limit related claim.
In addition, be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should make specification as a whole, and the technical scheme in each embodiment also can, through appropriate combination, form other execution modes that it will be appreciated by those skilled in the art that.
Claims (11)
1. an OLED device, comprise substrate, the first electrode layer on described substrate one surface, luminescent layer, the first charge transport layer between between described the first electrode layer and described luminescent layer, the second electrode lay, the second charge transport layer between described the second electrode lay and described luminescent layer, it is characterized in that, another surface of described substrate is provided with the nano concavo-convex structure sheaf, has on described nano concavo-convex structure sheaf and is the first nano concavo-convex structure that is paracycle or aperiodicity shape and its refractive index the exit direction graded.
2. OLED device as claimed in claim 1, it is characterized in that, interface between described the first charge transport layer and described luminescent layer is provided with light extraction structures, this light extraction structures comprises the second nano concavo-convex structure be arranged on described the first charge transport layer, with be arranged on described luminescent layer and with the complementary structure of described the second nano concavo-convex structure, wherein, described the second nano concavo-convex structure is and changes in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index.
3. OLED device as claimed in claim 1, is characterized in that, for just putting type OLED device, described the first charge transport layer is hole transmission layer, and described the second charge transport layer is electron transfer layer; For inverted OLED device, described the first charge transport layer is electron transfer layer, and described the second charge transport layer is hole transmission layer.
4. OLED device as claimed in claim 1, is characterized in that, described OLED device is individual layer or laminated construction.
5. the manufacture method of a described OLED device as any as claim 1-4, is characterized in that, its operating procedure comprises:
A10), make successively the first electrode layer, the first charge transport layer, luminescent layer, the second charge transport layer, the second electrode lay on substrate one surface, obtain preforming OLED device;
B10), each layer of structure of described preforming OLED device encapsulated;
C10), at another surface-coated ultra-violet curing glue-line of substrate;
D10), described ultra-violet curing glue-line being carried out to the soft imprint process of nanometer processes, obtain the nano concavo-convex structure sheaf, have on described nano concavo-convex structure sheaf and be the first nano concavo-convex structure changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index;
E10), complete the making of OLED device.
6. the manufacture method of a described OLED device as any as claim 1-4, is characterized in that, its operating procedure comprises:
A20), at substrate one surface-coated ultra-violet curing glue-line;
B20), described ultra-violet curing glue-line being carried out to the soft imprint process of nanometer processes, obtain the nano concavo-convex structure sheaf, have on described nano concavo-convex structure sheaf and be the first nano concavo-convex structure changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index;
C20), make successively the first electrode layer, the first charge transport layer, luminescent layer, the second charge transport layer, the second electrode lay on another surface of substrate;
D20), complete the making of OLED device.
7. the manufacture method of OLED device as described as claim 5 or 6, is characterized in that, the soft imprint process of described nanometer specifically comprises:
S1), prepare the two-dimensional nano concaveconvex structure in substrate, the formation impression block by any one technique in laser direct-writing or holography or electron beam deposition or evaporation sputter or chemical synthesis or self-assembling method;
S2), the two-dimensional nano concaveconvex structure in impression block is transferred on soft material to formation impression die;
S3), adopt the impression die to be impressed, solidify described ultra-violet curing glue-line, the two-dimensional nano concaveconvex structure on the impression die is transferred on the ultra-violet curing glue-line;
S4), the demoulding, form the nano concavo-convex structure sheaf on substrate, have on described nano concavo-convex structure sheaf and be the first nano concavo-convex structure changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index.
8. the manufacture method of OLED device as claimed in claim 7, is characterized in that, at described step S3) in, adopt volume to volume or flat to flat stamping technique, and adopt ultraviolet lighting to be cured described ultra-violet curing glue-line.
9. the manufacture method of an OLED device as claimed in claim 2, is characterized in that, its operating procedure comprises:
A30), make successively the first electrode layer on substrate one surface, be the first charge transport layer of colloidal state or half colloidal state, and at another surface-coated ultra-violet curing glue-line of described substrate;
B30), described ultra-violet curing glue-line and described the first charge transport layer are carried out to the soft imprint process processing of nanometer simultaneously, obtain respectively the nano concavo-convex structure sheaf and be the second nano concavo-convex structure changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index, having on described nano concavo-convex structure sheaf and be the first nano concavo-convex structure changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index;
C30), make luminescent layer on described the first charge transport layer, at least part of infiltration of described luminescent layer is to described the second nano concavo-convex structure, the complementary structure of formation and the second nano concavo-convex structure, make on the interface between the first charge transport layer and luminescent layer and form light extraction structures;
D30), make successively the second charge transport layer, the second electrode lay on described luminescent layer;
E30), complete the making of OLED device.
10. the manufacture method of OLED device as claimed in claim 9, is characterized in that, the soft imprint process of described nanometer specifically comprises:
S1 '), by any one technique in laser direct-writing or holography or electron beam deposition or evaporation sputter or chemical synthesis or self-assembling method, prepare the two-dimensional nano concaveconvex structure in substrate, form respectively the first impression block and the second impression block;
S2 '), the two-dimensional nano concaveconvex structure in the first impression block and the second impression block is transferred to respectively on soft material to corresponding first making ide Renhe the second impression die that forms;
Adopt first making ide Renhe the second impression die described ultra-violet curing glue-line and described the first charge transport layer to be impressed, solidify simultaneously, the two-dimensional nano concaveconvex structure in first making ide Renhe the second impression die is transferred to respectively on ultra-violet curing glue-line and the first charge transport layer S3 '), respectively;
S4 '), the demoulding, form respectively the nano concavo-convex structure sheaf and be the second nano concavo-convex structure changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index on substrate and the first charge transport layer, having on described nano concavo-convex structure sheaf and be the first nano concavo-convex structure changed in gradient along the emergent light direction paracycle or aperiodicity shape and its refractive index.
11. the manufacture method of OLED device as claimed in claim 10, it is characterized in that, at described step S3 ') in, adopt volume to volume or flat to flat stamping technique, and adopt ultraviolet lighting to be cured, to adopt heat treated to be cured described the first charge transport layer to described ultra-violet curing glue-line.
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Application publication date: 20131225 |