CN103474510B - A kind of manufacture method of copper-indium-galliun-selenium film solar cell - Google Patents
A kind of manufacture method of copper-indium-galliun-selenium film solar cell Download PDFInfo
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Abstract
The invention discloses a kind of manufacture method of copper-indium-galliun-selenium film solar cell, comprise conduction molybdenum slurry is sprayed, the mode of blade coating or printing is placed on solar cell substrate, obtains back electrode of solar cell; Copper-indium-galliun-selenium film solar cell is made again on the basis of above-mentioned back electrode of solar cell.Compared with prior art, method of the present invention adopts antivacuum technology of preparing to prepare the back electrode of copper-indium-galliun-selenium film solar cell, namely adopts silk screen print method or knife coating, and technique is simple, reduces manufacturing cost.
Description
Technical field
The invention belongs to electrode of solar battery preparation field, be specifically related to a kind of manufacture method of copper-indium-galliun-selenium film solar cell.
Background technology
Energy crisis, environmental pollution oneself become the mankind be badly in need of solve significant problem.Solar energy has the plurality of advantages such as aboundresources, easily acquisition, cleanliness without any pollution, and thus utilizing photovoltaic cell solar energy to be converted into electric energy is one of important channel of mankind's effective exploitation regenerative resource.Current, people constantly explore in new technology, new material and device architecture etc., to high cost, this hot inefficient that early settlement solar energy exists in opto-electronic conversion utilizes.The features such as CIGS solar cell has stable performance, capability of resistance to radiation is strong, production cost is low, environment-friendly high-efficiency, may become follow-on commercial thin-film solar cells.Current mainly through reducing production cost further to the exploitation of CIGS thin film solar cell roll to volume technique thus realizing the large-scale commercial applications application of thin-film solar cells.But, in prior art, the method for comparative maturity mainly adopts three-step approach to steam altogether or the method for magnetron sputtering prepares CIGS thin film solar cell.But these all need high vacuum system, thus it is high to there is production equipment cost, large area film forming is uneven, the shortcomings such as complex process, in order to solve the problem, first researcher has prepared CIGS nano particle, adopt the printing process of volume to volume technique to prepare CIGS thin film light absorbing zone subsequently, and other functional layer still adopts traditional handicraft and is assembled into CIGS thin film solar cell.In order to comprehensive compatible volume to volume printing technology reduces production cost, remaining CIGS hull cell functional layer needs to adopt antivacuum technology of preparing equally, such as: the back electrode molybdenum film of traditional CIGS hull cell prepares mainly through magnetron sputtering, therefore, the antivacuum technology of preparing studying molybdenum film is imperative.
Summary of the invention
The object of the invention is to overcome prior art defect, a kind of manufacture method of copper-indium-galliun-selenium film solar cell is provided.
Technical scheme of the present invention is as follows:
A manufacture method for copper-indium-galliun-selenium film solar cell, comprises the steps:
(1) preparation conduction molybdenum slurry, comprises the component of following weight portion:
Wherein organic carrier comprises the epoxy resin and organic solvent that mass ratio is 1-5:9-20, and additive comprises appropriate NaOH, thickener, plasticizer and surfactant; Above-mentioned each component is fully mixed, obtained conduction molybdenum slurry; (NaOH is mainly used in providing sodium element to promote the grain growth of CIGS thin-film, favourable raising solar battery efficiency; Thickener is a kind of auxiliary rheological agents, and its Main Function is used to the viscosity and the plasticity that regulate electrocondution slurry, improves caking property)
(2) mode of the spraying of above-mentioned conduction molybdenum slurry, blade coating or printing is placed on solar cell substrate, obtained back electrode of solar cell; Copper-indium-galliun-selenium film solar cell is made again on the basis of above-mentioned back electrode of solar cell.
In a preferred embodiment of the invention, described substrate comprises first substrate and second substrate, and described step (2) specifically comprises the steps:
A, plate one deck separator on the first substrate, with the impurity of isolated substrate;
B, on above-mentioned separator, to spray, the mode of blade coating or printing coats described conduction molybdenum slurry on separator, starches and removes wherein after organic principle, obtain dorsum electrode layer through pressure and this molybdenum of heat treatment compacting;
C, on above-mentioned dorsum electrode layer, make CIGS absorbed layer, CdS layer, i-ZnO layer, ZnAlO layer and Ni-Al electrode layer successively from top to bottom, and seal up second substrate on Ni-Al electrode layer, then complete and make described copper-indium-galliun-selenium film solar cell.
In a preferred embodiment of the invention, described substrate comprises first substrate and second substrate, and described step (2) specifically comprises the steps:
A, on second substrate, make Ni-Al electrode layer, ZnAlO layer, i-ZnO layer, CdS layer and cigs layer successively from top to bottom;
B, coating described conduction molybdenum slurry at cigs layer in the mode of spraying, blade coating or printing, through pressure and heat treatment pressure, this molybdenum starched and remove wherein after organic principle, to form dorsum electrode layer on cigs layer;
C, plate one deck separator on the first substrate, with the impurity of isolated substrate;
D, the first substrate plating separator to be bonded on dorsum electrode layer in the mode of hot pressing, then to complete and make described copper-indium-galliun-selenium film solar cell.
In a preferred embodiment of the invention, described substrate comprises first substrate and second substrate, and described step (2) specifically comprises the steps:
A, on second substrate, make Ni-Al electrode layer, or make Ni-Al electrode layer and ZnAlO layer successively from top to bottom, or make Ni-Al electrode layer, ZnAlO layer and i-ZnO layer successively from top to bottom, or make Ni-Al electrode layer, ZnAlO layer, i-ZnO layer and CdS layer successively from top to bottom, or make Ni-Al electrode layer, ZnAlO layer, i-ZnO layer, CdS layer and cigs layer successively from top to bottom, obtain the second battery layers;
B, plate one deck separator on the first substrate, with the impurity of isolated substrate;
C, on above-mentioned separator, to spray, the mode of blade coating or printing coats described conduction molybdenum slurry on separator, starches and removes wherein after organic principle, obtain dorsum electrode layer through pressure and this molybdenum of heat treatment compacting;
D, on above-mentioned dorsum electrode layer, the second battery layers that corresponding step a is obtained, make cigs layer, CdS layer, i-ZnO layer and ZnAlO layer from top to bottom successively, or make cigs layer, CdS layer and i-ZnO layer from top to bottom successively, or make cigs layer and CdS layer successively from top to bottom, or making cigs layer, or be only dorsum electrode layer, obtain the first battery layers;
E, above-mentioned first battery layers and the second battery layers to be bonded together by hot pressing, then to complete and make described copper-indium-galliun-selenium film solar cell.
Preferably,
Described molybdenum powder is the molybdenum powder of particle diameter 0.01-50 μm, when the molybdenum powder particle used is excessive, in the process of molybdenum slurry sintering, and the defective tightness combined between molybdenum particle, rete is coarse, and sintering defect is many, and the properties of electrode can decline; And when molybdenum powder particle diameter is too small, because surface energy is excessive, more easily reuniting between particle is not easy dispersion, be just not easy printing and levelling more than a certain constant concentration, electrode preparation difficulty, cost is corresponding also to be increased greatly.
Described glass dust is lead-free glass powder, makes molybdenum starch connection in heat treatment process, tension, fixing conductive phase molybdenum particle, forms fine and close conductive film and also whole rete and substrate are bonded together securely.In addition, adding of this glass dust can improve conductive paste liquid system various aspects of performance, such as make the dispersion of conduction slurries each composition evenly; The difference that glass dust percentage composition is chosen can also adjust the heat treatment temperature regulating molybdenum slurry, the molybdenum slurry used at preparation heat treatment temperature 400 ~ 1200 DEG C.
Described epoxy resin is one in E44 and E51 epoxy resin or mixing, and it has excellent cohesive force, anti-oxidant, corrosion resistant characteristic, can also regulate slurries viscosity, can add trace in addition polyurethane-modified, make it more easily solidify.
Described organic solvent comprises Macrogol 200, preferred further, described organic solvent also comprises terpinol and/or PEG400, and the mass ratio of terpinol and Macrogol 200 is 0-30:55-100, and the mass ratio of PEG400 and Macrogol 200 is 0-15:55-100.These organic solvents above-mentioned are nontoxic, relatively good to the wettability of molybdenum powder, molybdenum powder uniform particles can be wrapped up and be beneficial to the dispersed of molybdenum powder particle, electrocondution slurry is made to be not easy to produce reunion and precipitation, wherein terpinol is colourless thick liquid, boiling point is 220.85 DEG C, containing oxygen atom in structure, the reunion of molybdenum nano-scale particle can be reduced, evaporation rate can also be controlled when slurry drying simultaneously, prevent coating rete local from causing because solvent evaporates is too fast rete to shrink inequality and produce cracking; The polyethylene glycol that relative molecular weight is lower has the extensive compatibility with various solvent, is good solvent and solubilizer, whole slurry system is mixed evenly, and control the solubility of additives such as the rate of drying of slurry and thickener.In addition PEG-4000 or defoamer, can play in the process stirred and avoid liquid level to occur bubble, polyethylene glycol-200 is also used as NMF, viscosity diluent, if the too high polyethylene glycol-200 that can add of slurries viscosity regulates.In sintering process, these solvents can progressively volatilize or decompose, and avoid in film surface and inner generation cavity, clean to volatilization during certain temperature, noresidue ash content.
Described thickener is one in ethyl cellulose, butyl cellulose, hydroxyethylcellulose and methyl hydroxyethylcellulose or mixing; Not only can make slurry thickening, after slurry sintering, there is certain mechanical strength, slurry can also be made to be not easy oxidation and precipitation, improve slurry rheological property, give mechanical performance and the bin stability of electrocondution slurry excellence, form tough film after organic solvent volatilization at a certain temperature, under high temperature, (more than about 300 DEG C) can thermal decomposition effusion and noresidue ash content.
Described plasticizer is the organic polymer plasticizer with flexible group, preferably comprises dibutyl phthalate, polyesters plasticizer or polyalcohol ester plasticizer; Above-mentioned plasticizer can increase polymer plastic and electrocondution slurry viscosity, reaches the object optimizing electrocondution slurry levelability and thixotropy and processing characteristics.
Described surfactant comprises one in ethanol, toluene, SPAN85, lecithin or mixing.Wherein SPAN85 has good intermiscibility in organic media, improves the wetability of organic solvent, and hydroxyl value higher in addition and molecular weight can ensure that it suspends while the more metallic particles of absorption, have facilitation to the stability of slurry; Ethanol is good to the wetability of molybdenum powder particle, and good to other additives such as solubility of ethylcellulose.
Finally can also according to different application conditions, such as different substrates, adds the auxiliary agents such as other flow control agents, gelling agent, thixotropic agent, changes the performance such as rheological characteristic and thixotropy of electrocondution slurry.Such as on the glass substrate; add the effect that organic silicone oil can play levelling, lubrication; also can improve the wetability to glass substrate, simultaneously owing to being sinter on the glass sheet, element silicon wherein can form the effect that silicon dioxide plays bonding substrate protection conductive film layer.
In a preferred embodiment of the invention, described substrate comprises glass substrate, stainless steel substrate and PI(polyimides) substrate.
The invention has the beneficial effects as follows:
Compared with prior art, method of the present invention adopts antivacuum technology of preparing to prepare the back electrode of copper-indium-galliun-selenium film solar cell, namely adopts silk screen print method or knife coating, and technique is simple, reduces manufacturing cost.
Accompanying drawing explanation
Fig. 1 is the XDR test result figure of composite conducting molybdenum slurry sample on the glass substrate prepared by the embodiment of the present invention 1;
Fig. 2 is one of composite conducting molybdenum slurry stereoscan photograph on the glass substrate after 450 DEG C of heat treatment of the embodiment of the present invention 1 preparation;
Fig. 3 is the stereoscan photograph two of composite conducting molybdenum slurry on the glass substrate after 450 DEG C of heat treatment prepared by the embodiment of the present invention 1;
Fig. 4 is one of composite conducting molybdenum slurry stereoscan photograph on the glass substrate after 550 DEG C of heat treatment of the embodiment of the present invention 1 preparation;
Fig. 5 is the stereoscan photograph two of composite conducting molybdenum slurry on the glass substrate after 550 DEG C of heat treatment prepared by the embodiment of the present invention 1;
Fig. 6 is the XDR test result figure of the sample of composite conducting molybdenum slurry on stainless steel substrate prepared by the embodiment of the present invention 2;
Fig. 7 is the stereoscan photograph of composite conducting molybdenum slurry on stainless steel substrate after 850 DEG C of heat treatment prepared by the embodiment of the present invention 2;
Fig. 8 is the stereoscan photograph of composite conducting molybdenum slurry on stainless steel substrate after 900 DEG C of heat treatment prepared by the embodiment of the present invention 2;
Fig. 9 is the stereoscan photograph of composite conducting molybdenum slurry on stainless steel substrate after 950 DEG C of heat treatment prepared by the embodiment of the present invention 2;
Embodiment
By reference to the accompanying drawings below by way of embodiment technical scheme of the present invention is further detailed and is described.
Embodiment 1
By 7g molybdenum powder (particle diameter 0.01-50 μm), 0.5g glass dust (lead-free glass powder), 0.5g terpinol, 1g polyethylene glycol-200,0.25g PEG-4000,0.1g epoxy resin E44(or E51), 0.005gNaOH, 0.1g ethyl cellulose, 0.01g dibutyl phthalate, class of 0.03g department 85(SPAN85), 0.5g ethanol, 0.005g organic silicone oil put together and mix, obtained composite conducting molybdenum slurry.
Molybdenum is starched silk screen printing or blade coating at glass substrate, 200 DEG C of oven dry, then heat treatment 0.5 hour at 450 DEG C and 550 DEG C respectively, is incubated 2 hours at 200 DEG C, prepares conduction molybdenum film electrode.Use molybdenum powder by using X-ray diffraction (XRD) analysis and prepare the crystal formation of molybdenum film, crystal orientation, the crystalline qualities such as stress suffered by crystal grain (as shown in Figure 1, 1. curve is the XRD analysis result after 450 DEG C of heat treatment, 2. curve is the XRD analysis result after 550 DEG C of heat treatment), scanning electron microscopy (SEM) observes their surface and cross section (as shown in Figures 2 to 5, Fig. 2 and Fig. 3 is the photo after 450 DEG C of heat treatment, Fig. 4 and Fig. 5 is the photo after 550 DEG C of heat treatment), use four point probe resistance meter to measure film rectangular resistance to characterize, and calculate resistivity.Adopt American Society Testing and Materials (AmericanSocietyforTestingMaterials, ASTM) standard test method ASTM-D3359-08, the caking property test that StandardTestMethodsforMeasuringAdhesionbyTapeTest carries out film characterizes, and test result is as shown in table 1 below:
Table 1 sample resistivity and caking property test result
Embodiment 2
By 7g molybdenum powder (particle diameter 0.01-50 μm), 0.5g glass dust (lead-free glass powder), 0.5g terpinol, 1g polyethylene glycol-200,0.25g PEG-4000,0.1g epoxy resin E44(or E51), 0.1g ethyl cellulose, 0.01g dibutyl phthalate, class of 0.04g department 85,0.5g ethanol puts together and mixes, obtained composite conducting molybdenum slurry.
Molybdenum is starched silk screen printing on flexible stainless steel substrate, 200 DEG C of oven dry, then heat treatment 0.5 hour at 850 DEG C, 900 DEG C, 950 DEG C respectively, is incubated 2 hours at 200 DEG C, prepares conduction molybdenum film electrode.Use molybdenum powder by using X-ray diffraction (XRD) analysis and prepare the crystal formation of molybdenum film, crystal orientation, the crystalline qualities such as stress suffered by crystal grain (as shown in Figure 6, 3. curve is the XRD analysis result after 850 DEG C of heat treatment, 4. curve is the XRD analysis result after 900 DEG C of heat treatment, 5. curve is the XRD analysis result after 950 DEG C of heat treatment), scanning electron microscopy (SEM) observes their surface and cross section (as shown in Figure 7 to 9, Fig. 7 is the photo after 850 DEG C of heat treatment, Fig. 8 is the photo after 900 DEG C of heat treatment, Fig. 9 is the photo after 950 DEG C of heat treatment), use four point probe resistance meter to measure film rectangular resistance to characterize, and calculate resistivity.Adopt American Society Testing and Materials (AmericanSocietyforTestingMaterials, ASTM) standard test method ASTM-D3359-08, the caking property test that StandardTestMethodsforMeasuringAdhesionbyTapeTest carries out film characterizes, and test result is as shown in table 2 below:
Table 2 sample resistivity and caking property test result
Those skilled in the art can adjust in following process conditions, and obtain same as the previously described embodiments or close technique effect:
Described organic solvent also comprises terpinol and/or PEG400, and the mass ratio of terpinol and Macrogol 200 is 0-30:55-100, and the mass ratio of PEG400 and Macrogol 200 is 0-15:55-100.
Described thickener is one in ethyl cellulose, butyl cellulose, hydroxyethylcellulose and methyl hydroxyethylcellulose or mixing;
Described plasticizer is the organic polymer plasticizer with flexible group, preferably includes dibutyl phthalate, polyesters plasticizer or polyalcohol ester plasticizer;
Described surfactant comprises one in ethanol, toluene, SPAN85, lecithin or mixing.
Embodiment 3
A manufacture method for copper-indium-galliun-selenium film solar cell, comprises the steps:
(1) preparation conduction molybdenum slurry, comprises the component of following weight portion:
Wherein organic carrier comprises the epoxy resin and organic solvent that mass ratio is 1-5:9-20, and additive comprises appropriate NaOH, thickener, plasticizer and surfactant; Above-mentioned each component is fully mixed, obtained conduction molybdenum slurry;
(2) mode of the spraying of above-mentioned conduction molybdenum slurry, blade coating or printing is placed on solar cell substrate (described substrate comprises first substrate and second substrate), obtained back electrode of solar cell; Copper-indium-galliun-selenium film solar cell is made again on the basis of above-mentioned back electrode of solar cell.
Described step (2) specifically can be divided into following three kinds of method for optimizing:
Method for optimizing one comprises the steps:
A, plate one deck separator on the first substrate, with the impurity of isolated substrate;
B, on above-mentioned separator, to spray, the mode of blade coating or printing coats described conduction molybdenum slurry on separator, starches and removes wherein after organic principle, obtain dorsum electrode layer through pressure and this molybdenum of heat treatment compacting;
C, on above-mentioned dorsum electrode layer, make CIGS absorbed layer, CdS layer, i-ZnO layer, ZnAlO layer and Ni-Al electrode layer successively from top to bottom, and seal up second substrate on Ni-Al electrode layer, then complete and make described copper-indium-galliun-selenium film solar cell.
Method for optimizing two comprises the steps:
A, on second substrate, make Ni-Al electrode layer, ZnAlO layer, i-ZnO layer, CdS layer and cigs layer successively from top to bottom;
B, coating described conduction molybdenum slurry at cigs layer in the mode of spraying, blade coating or printing, through pressure and heat treatment pressure, this molybdenum starched and remove wherein after organic principle, to form dorsum electrode layer on cigs layer;
C, plate one deck separator on the first substrate, with the impurity of isolated substrate;
D, the first substrate plating separator to be bonded on dorsum electrode layer in the mode of hot pressing, then to complete and make described copper-indium-galliun-selenium film solar cell.
Method for optimizing three comprises the steps:
A, on second substrate, make Ni-Al electrode layer, or make Ni-Al electrode layer and ZnAlO layer successively from top to bottom, or make Ni-Al electrode layer, ZnAlO layer and i-ZnO layer successively from top to bottom, or make Ni-Al electrode layer, ZnAlO layer, i-ZnO layer and CdS layer successively from top to bottom, or make Ni-Al electrode layer, ZnAlO layer, i-ZnO layer, CdS layer and cigs layer successively from top to bottom, obtain the second battery layers;
B, plate one deck separator on the first substrate, with the impurity of isolated substrate;
C, on above-mentioned separator, to spray, the mode of blade coating or printing coats described conduction molybdenum slurry on separator, starches and removes wherein after organic principle, obtain dorsum electrode layer through pressure and this molybdenum of heat treatment compacting;
D, on above-mentioned dorsum electrode layer, the second battery layers that corresponding step a is obtained, make cigs layer, CdS layer, i-ZnO layer and ZnAlO layer from top to bottom successively, or make cigs layer, CdS layer and i-ZnO layer from top to bottom successively, or make cigs layer and CdS layer successively from top to bottom, or making cigs layer, or be only dorsum electrode layer, obtain the first battery layers;
E, above-mentioned first battery layers and the second battery layers to be bonded together by hot pressing, then to complete and make described copper-indium-galliun-selenium film solar cell.
The above, be only preferred embodiment of the present invention, therefore can not limit scope of the invention process according to this, the equivalence change namely done according to the scope of the claims of the present invention and description with modify, all should still belong in scope that the present invention contains.
Claims (7)
1. a manufacture method for copper-indium-galliun-selenium film solar cell, is characterized in that: comprise the steps:
(1) preparation conduction molybdenum slurry, comprises the component of following weight portion:
Wherein organic carrier comprises the epoxy resin and organic solvent that mass ratio is 1-5:9-20, additive comprises appropriate NaOH, thickener, plasticizer and surfactant, described molybdenum powder is the molybdenum powder of particle diameter 0.01-50 μm, described glass dust is lead-free glass powder, described epoxy resin is one in E44 and E51 epoxy resin or mixing, described organic solvent comprises Macrogol 200, terpinol and/or PEG400, the mass ratio of terpinol and Macrogol 200 is 0-30:55-100, and the mass ratio of PEG400 and Macrogol 200 is 0-15:55-100; Above-mentioned each component is fully mixed, obtained conduction molybdenum slurry;
(2) mode of the spraying of above-mentioned conduction molybdenum slurry, blade coating or printing is placed on solar cell substrate, obtained back electrode of solar cell; Copper-indium-galliun-selenium film solar cell is made again on the basis of above-mentioned back electrode of solar cell.
2. the manufacture method of a kind of copper-indium-galliun-selenium film solar cell as claimed in claim 1, is characterized in that: described substrate comprises first substrate and second substrate, described step (2) specifically comprises the steps:
A, plate one deck separator on the first substrate, with the impurity of isolated substrate;
B, on above-mentioned separator, to spray, the mode of blade coating or printing coats described conduction molybdenum slurry on separator, starches and removes wherein after organic principle, obtain dorsum electrode layer through pressure and this molybdenum of heat treatment compacting;
C, on above-mentioned dorsum electrode layer, make CIGS absorbed layer, CdS layer, i-ZnO layer, ZnAlO layer and Ni-Al electrode layer successively from top to bottom, and seal up second substrate on Ni-Al electrode layer, then complete and make described copper-indium-galliun-selenium film solar cell.
3. the manufacture method of a kind of copper-indium-galliun-selenium film solar cell as claimed in claim 1, is characterized in that: described substrate comprises first substrate and second substrate, described step (2) specifically comprises the steps:
A, on second substrate, make Ni-Al electrode layer, ZnAlO layer, i-ZnO layer, CdS layer and cigs layer successively from top to bottom;
B, on cigs layer, coat described conduction molybdenum slurry in the mode of spraying, blade coating or printing, starch through pressure and this molybdenum of heat treatment compacting and remove wherein after organic principle, to form dorsum electrode layer on cigs layer;
C, plate one deck separator on the first substrate, with the impurity of isolated substrate;
D, the first substrate plating separator to be bonded on dorsum electrode layer in the mode of hot pressing, then to complete and make described copper-indium-galliun-selenium film solar cell.
4. the manufacture method of a kind of copper-indium-galliun-selenium film solar cell as claimed in claim 1, is characterized in that: described substrate comprises first substrate and second substrate, described step (2) specifically comprises the steps:
A, on second substrate, make Ni-Al electrode layer, ZnAlO layer, i-ZnO layer, CdS layer and cigs layer successively from top to bottom, obtain the second battery layers;
B, plate one deck separator on the first substrate, with the impurity of isolated substrate;
C, on above-mentioned separator, to spray, the mode of blade coating or printing coats described conduction molybdenum slurry on separator, starches and removes wherein after organic principle, obtain dorsum electrode layer through pressure and this molybdenum of heat treatment compacting;
D, on above-mentioned dorsum electrode layer, the second battery layers that corresponding step a is obtained, make cigs layer, CdS layer, i-ZnO layer and ZnAlO layer from top to bottom successively, or make cigs layer, CdS layer and i-ZnO layer from top to bottom successively, or make cigs layer and CdS layer successively from top to bottom, or making cigs layer, obtain the first battery layers;
E, above-mentioned first battery layers and the second battery layers to be bonded together by hot pressing, then to complete and make described copper-indium-galliun-selenium film solar cell.
5. the manufacture method of a kind of copper-indium-galliun-selenium film solar cell as described in claim arbitrary in Claims 1-4, is characterized in that: described thickener is one in ethyl cellulose, butyl cellulose, hydroxyethylcellulose and methyl hydroxyethylcellulose or mixing; Described plasticizer is the organic polymer plasticizer with flexible group; Described surfactant comprises one in ethanol, toluene, SPAN85, lecithin or mixing.
6. the manufacture method of a kind of copper-indium-galliun-selenium film solar cell as claimed in claim 5, is characterized in that: described plasticizer comprises dibutyl phthalate, polyesters plasticizer or polyalcohol ester plasticizer.
7. the manufacture method of a kind of copper-indium-galliun-selenium film solar cell as described in claim arbitrary in Claims 1-4, is characterized in that: described substrate comprises glass substrate, stainless steel substrate and PI substrate.
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| CN102439716A (en) * | 2008-11-14 | 2012-05-02 | 应用纳米技术控股股份有限公司 | Inks and pastes for solar cell fabrication |
| CN102082190A (en) * | 2009-11-27 | 2011-06-01 | 财团法人工业技术研究院 | Solar battery and manufacturing method thereof |
| CN103077764A (en) * | 2013-02-01 | 2013-05-01 | 李春生 | Electrocondution slurry for front side electrode of solar cell |
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