CN103472480B - Electrochemistry sensing element, its preparation method, apply its geophone - Google Patents
Electrochemistry sensing element, its preparation method, apply its geophone Download PDFInfo
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- CN103472480B CN103472480B CN201310432017.XA CN201310432017A CN103472480B CN 103472480 B CN103472480 B CN 103472480B CN 201310432017 A CN201310432017 A CN 201310432017A CN 103472480 B CN103472480 B CN 103472480B
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Abstract
The invention provides a kind of electrochemistry sensing element, its preparation method, apply its geophone.This electrochemistry sensing element uses two-layer silicon chip to make electrode and flow passage structure respectively, make to make on the silicon chip of electrode and can all produce electrode structure with tow sides, in the case of parameter is the same, the effective area increasing of electrode is twice, thus increasing is also twice by the sensitivity of electrochemistry sensing element.
Description
Technical field
The present invention relates to MEMS sensor technical field, particularly relate to a kind of electrochemistry sensing element, its preparation method, answer
With its geophone.
Background technology
In numerous Detection Techniques over the ground, seismic method is mostly important and effect is a kind of, in seismic survey
Requisite link is exactly to sense the seismic instrument of faint earthquake ripple.As the core component of seismic instrument, geophone
Performance directly decide the performance indications of seismic instrument, important technological parameters etc., its importance has some idea of.
Current geophone is different according to structures and methods, is divided into moving-coil seismic detector, piezoelectric type earthquake inspection
Ripple device, fiber Bragg grating type geophone and the emerging MEMS acceleration formula geophone being combined with MEMS technology, electricity
Chemistry geophone etc..Electrochemistry geophone is because it is highly sensitive, low in energy consumption, device is little, making is simple, low frequency is special
Property become well a new generation geophone.
Electrochemistry geophone is made up of shell, electrolyte solution and electrode chip.On electrode chip, sputtering has the moon
Pole and anode, apply a constant voltage between a cathode and an anode, when there is speed or the acceleration being perpendicular to electrode direction
When spending, the electrolyte solution negative ions between negative electrode and anode will migrate, and ion concentration changes therewith, between electrode
Electric current changes, and can be detected the size and Orientation of acceleration or speed by the electric current between detection negative electrode and anode.
Present applicant is previously proposed a kind of electrochemistry geophone based on planar microelectrode
(CN201110309982.9), it sputters anodic-cathodic on silicon chip simultaneously, becomes interdigital structure arrangement, and chip back is carved with stream
Road, guides the flowing of fluid, and then multilayer chiop superposition forms chipset.
But, in above-mentioned chipset design method, single-chip only one side is with electrode, the effective area of interdigital electrode
Less than normal, and and another sheet chip assemble after, the runner on another chip has hidden partial electrode effective area, causes on chip
Electrode less than normal with the contact area of electrolyte, device receive external shock time input shock momentum can not be fully converted into output
The signal of telecommunication, so the sensitivity of device is low.
Summary of the invention
(1) to solve the technical problem that
In view of above-mentioned technical problem, the invention provides a kind of electrochemistry sensing element, its preparation method, apply its ground
Shake cymoscope.
(2) technical scheme
According to an aspect of the invention, it is provided a kind of electrochemistry sensing element.Fix on this electrochemistry sensing element
Part；Lower fixture；Stacked die group, sandwiches and is fixed between fixed part and lower fixture, by multiple chip laminates
Become；Each chip in the plurality of chip includes: upper chip layer, its tow sides are respectively provided with anode and the moon of longitudinal extension
Pole；Lower chip layer, is bonded to the surface of described upper chip layer, forms lateral isolation runner in this second chip layer, and this is the most exhausted
Anode and the negative electrode of described upper chip layer are exposed by edge runner；Wherein, in this stacked die group, under a upper chip, chip layer is exhausted
Edge runner is close to anode and the negative electrode of next chip on chip layer；Article two, metal wire, is used for being electrically connected with described stacking
The anode of each chip on chip layer and negative electrode in chip, the end of these two metal wire is electrically connected to fixed part
Or corresponding electrode pad on lower fixture.
According to another aspect of the present invention, the preparation method of a kind of above-mentioned electrochemistry sensing element is additionally provided.Should
Preparation method includes: step A, prepares multiple chip；Step B, carries out laminate adhesive or bonding by the plurality of chip, obtains
Stacked die group；Step C, is fixedly clamped described stacked die group with upper fixing element and lower fixture, and by stacked die group
In the anode of each chip and negative electrode carry out pressure welding with corresponding wire.
According to the present invention in one aspect, a kind of seismic detection based on above-mentioned electrochemistry sensing element is additionally provided
Device.This geophone includes: package casing；Electrochemistry sensing element, for above-mentioned electrochemistry sensing element；Wherein, described
Electrochemistry sensing element is placed in described package casing, the runner of each chip and the compression stream of package casing in its stacked die group
Road is parallel；Electrolyte solution, is sealed in described package casing, around described electrochemistry sensing element.
(3) beneficial effect
From technique scheme it can be seen that electrochemistry sensing element of the present invention, its preparation method, apply its earthquake to examine
Ripple device has the advantages that
(1) two-layer silicon chip is used to make electrode and flow passage structure respectively so that making can be with positive and negative two on the silicon chip of electrode
Electrode structure is all produced in face, and in the case of parameter is the same, the effective area increasing of electrode is twice, thus electrochemistry sensitivity is first
Increasing is also twice by the sensitivity of part；
(2) encapsulation of geophone uses single package casing to encapsulate, and it is the most fairly simple, it is easy to add
Work；There is no too much cross section, be possible to prevent leakage, it is possible to reduce the encapsulation difficulty of device and improve the reliability of device.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of embodiment of the present invention electrochemistry sensing element；
Fig. 2 is the top view of a chip in electrochemistry sensing element shown in Fig. 1；
Fig. 3 is the generalized section of device after each step performs in electrochemistry sensing element preparation process shown in Fig. 1；
Fig. 4 is the structural representation of embodiment of the present invention geophone；
Fig. 5 is the schematic diagram of package casing body in package casing in shake cymoscope as shown in Figure 4.
[main element symbol description of the present invention]
2-1: anode；2-2: cathode electrode；
3-1: electrode pad；3-2: runner；
3-3:PCB plate；3-4: metal wire；
4-1: chip draw-in groove 4-2: notch arrangement；
4-3: liquid injection hole 4-4: screw
5-1: chipset 5-2: package casing
5-3: rubber blanket 5-4: retainer ring.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in more detail.
It should be noted that in accompanying drawing or description describe, similar or identical part all uses identical figure number.Attached
The implementation not illustrated in figure or describe, for form known to a person of ordinary skill in the art in art.Although it addition, originally
Literary composition can provide the demonstration of the parameter comprising particular value, it is to be understood that parameter is worth equal to corresponding without definite, but can be able to connect
It is similar in the error margin being subject to or design constraint be worth accordingly.Additionally, the direction term mentioned in following example, such as
On " ", D score, "front", "rear", "left", "right" etc., be only the direction with reference to accompanying drawing.Therefore, the direction term of use is used to
Illustrate not to be used for limiting the present invention.
Electrochemistry sensing element of the present invention, its preparation method, apply its geophone, with single silicon chip just change
The sputtering electrode back side, face deep etching does the design of runner, uses two silicon chips to do electrode and runner respectively, and two silicon chips are by viscous
Close bonding and keep rigid contact.Owing to chip tow sides have electrode, so that increasing is twice by electrode effective area.
In first exemplary embodiment of the present invention, it is provided that a kind of electrochemistry sensing element.The present embodiment electrification
The ultimate principle learning sensing element is: the upper and lower surface of silicon chip is all sputtered same electrode structure, and electrode becomes interdigitated to arrange,
Then on the silicon chip of sputtering electrode, directly bonding is bonded another sheet silicon chip, second silicon chip is carried out deep etching and makes band
There is the runner of multiple tracks " one " font square groove, then the stacking carrying out chip constitutes chipset, finally to the electrode drawn on chipset
Carry out pressure welding and be connected to external circuit.
Refer to Fig. 1, this electrochemistry sensing element includes: two pieces of pcb boards, stacked die group and two metal wire.Its
In, two pieces of pcb boards are respectively as upper fixing element and lower fixture, for being fixed stacked die group.People in the art
Member is it should be clear that upper fixing element and lower fixture can also select other insulant.
Stacked die group sandwiches and is fixed between fixed part and lower fixture, multiple chip laminates form；Institute
The each chip stated in multiple chip includes: upper chip layer, its tow sides are respectively provided with anode and the negative electrode of longitudinal extension；Lower core
Lamella, is bonded to the surface of described upper chip layer, forms lateral isolation runner in this lower chip layer, and this lateral isolation runner is by institute
Anode and the negative electrode of stating chip layer expose；Wherein, in this stacked die group, the lateral isolation runner of chip layer under a upper chip
It is close to anode and the negative electrode of next chip on chip layer.In the present embodiment, the backing material of upper chip layer and lower chip layer is
Monocrystalline substrate；Anode and the material of negative electrode in upper chip layer be: gold, silver or platinum.And those skilled in the art can also root
According to needing to select the material of backing material and electrode.
Fig. 2 is the top view of a chip in electrochemistry sensing element shown in Fig. 1.Refer to Fig. 2, in the present embodiment, upper core
The double-edged anode of lamella and negative electrode be interdigital structure arrange and constitute longitudinal N number of interdigital right.The upper chip layer with shown in Fig. 2
Correspondence, lower chip layer is formed N bar insulation runner, and anode and the negative electrode of corresponding interdigital pair are all exposed by every bar insulation runner.
Insulation runner is " one " font square trench, is parallel to each other between each insulation runner.
In the present embodiment, in stacked die group, multiple chips combine by the way of laminate adhesive or bonding；Each core
Upper chip layer and the lower chip layer of sheet combine by the way of adhesive bond.
Article two, the anode of metal wire each chip on chip layer in being electrically connected with described stacked die and negative electrode, should
Article two, the end of metal wire is electrically connected on fixed part or lower fixture corresponding electrode pad.The present embodiment
In, the material of these two metal wire is gold, silver or platinum.In second exemplary embodiment of the present invention, it is provided that a kind of
The preparation method of above-mentioned electrochemistry sensing element.Refer to Fig. 2 and Fig. 3, this preparation method includes:
Step A, grows oxide layer by thermal oxidation technology at the monocrystalline silicon surface as shown in 1-1 in Fig. 3, in Fig. 3
Shown in 1-2；
Step B, monocrystalline silicon surface whirl coating after oxidation, as shown in 1-3 in Fig. 3；
Step C, carries out photoetching, obtains microelectrode figure, as shown in 1-4 in Fig. 3；
Step D, sputtering platinum or other inert metal electrode make interdigital electrode pair, as shown in 1-5 in Fig. 3；
Step E, stripping photoresist obtains the electrode structure in front, as shown in 1-6 in Fig. 3, electrode pattern be anode 2-1 and
Negative electrode 2-2 becomes interdigital arrangement, and the spacing between electrode width and electrode can need to be adjusted according to device performance；
Step F, repeats step B～step E, at monocrystalline silicon piece another side sputtering platinum or other inert metals, obtains up and down
Two sides all sputters the structure of microelectrode, as shown in 1-7 in Fig. 3；
Step G, repeats step A, aoxidizes another silicon chip；
Step H, uses bonding bonding technology, on the silicon chip that two sides all sputters microelectrode figure, bonds bonding steps G
The silicon chip obtained, as shown in 1-8 in Fig. 3；
Step I, repeats the step of photoetching, and the silicon chip after bonding bonding is carried out deep etching, at the silicon of new bonding bonding
Etching the flow passage structure 3-2 of " one " word square groove shape on sheet, become arranged in parallel between runner, the degree of depth of etching should be just new
The silicon wafer thickness of bonding bonding, allows the electrode structure of bottom expose.Last scribing；
Step G, carries out laminate adhesive or bonding by the single-chip made by above step, obtains the chip after superposition
Group.Outside this chipset, bond the pcb board 3-3 of two pieces of band gold plated pads again, by the same electrode 3-1 that extracts on chipset from
Upper and under carry out pressure welding, be continuously connected on the pad of pcb board.During pressure welding use gold thread 3-4 or other be prone to welding conduction
Material.
Electrochemistry sensing element based on above-described embodiment, in the 3rd exemplary embodiment of the present invention, it is provided that
A kind of geophone, refer to Fig. 4 and Fig. 5, and this geophone includes: electrochemistry sensing element, package casing, rubber blanket
Be fixed ring.Wherein, electrochemistry sensing element is placed in package casing, the runner of each chip and envelope in its stacked die group
The compression runner of casing is parallel；Electrolyte solution, is sealed in package casing, around electrochemistry sensing element.Electrochemistry
The direction of insertion of sensing element, be on the basis of runner direction, it is ensured that the direction of the two runner is consistent.
Refer to Fig. 4 and Fig. 5, package casing includes: package casing body, has the cavity of compression runner；Upper compression is solid
Determine ring and under be fixed ring, be fixed on above and below package casing body by rubber blanket respectively, it is achieved cavity close
Envelope；Liquid injection hole and liquid outlet, be positioned at the side of package casing body, for injecting electrolyte solution in cavity；Chip draw-in groove,
It is positioned at the notch in package casing body front, communicates with compression runner cavity, be used for inserting electrochemistry sensing element.Wherein,
The material of package casing body is lucite or the material of other electrolyte resistances corrosion；On be fixed ring and under be fixed
The material of ring is rustless steel or the material of other electrolyte resistances corrosion；Electrolyte solution is selected from one of them of following solution:
Potassium iodide and the mixed solution of elemental iodine；Bromide and the mixed solution of bromine simple substance；Or comprise second order iron ion and ferric iron from
The mixed solution of son.
The ultimate principle of the present embodiment geophone is: carry out chipset two sides pcb board sandwiching protection, it is to avoid core
Sheet group directly contacts firmly with package casing 5-2.Then the materials processing using lucite or the corrosion of other electrolyte resistances becomes one
Individual with liquid injection hole 4-3, compress runner, chip draw-in groove 4-1, screw 4-4 and the shell of notch 4-2, chipset is inserted into core
In sheet draw-in groove 4-1, compress rubber blanket 5-3, be fixed ring 5-4, fastened by screw, load electrolyte solution and be bonded and sealed
Liquid injection hole 4-3.The encapsulating structure that the design provides is simple, it is easy to processing, thus concordance is good.The present invention in order to encapsulate conveniently,
Ensureing that electrolyte can only be circulated by the runner of chipset simultaneously, devise notch arrangement 4-2, this notch coordinates chip draw-in groove 4-
1 so that card slot length is consistent with chipset length, card well width is consistent with chipset width, only need to be at notch and draw-in groove two
Wall adhesive seal, can fix and encapsulating chip group.
For the clearer structure understanding the present embodiment geophone, a kind of above-mentioned geophone given below
Preparation method.This preparation method includes:
1) package casing, rubber blanket and be fixed the processing of ring.Package casing comprises liquid injection hole 4-3, screw 4-4, pressure
The primary structures such as contracting runner, chip draw-in groove 4-1 and notch arrangement 4-2.Square hole draw-in groove is through hole, it is simple to inserts and blocks chip
Group, the yardstick of its three-dimensional will be slightly larger than the yardstick of chipset, and length and width is more than chipset about 0.5mm, the degree of depth
More than chipset about 1mm on direction.The length and width of square notch be both greater than chip draw-in groove size 2mm or more than, just
In adhesive seal.The design of rubber blanket to match with package casing 5-2 and retainer ring 5-4.Wherein, the horizontal stroke of chip draw-in groove 4-1
Cross section is only slightly larger than the cross section of sensing element.The area that the insertion depth runner to be ensured of electrochemistry sensing element communicates is
Greatly, should not cross deep or the most shallow.
2) the chipset 5-1 of stacking is inserted in chip draw-in groove 4-1, use adhesive seal to realize encapsulation.
3) seal package casing 5-2 two ends with rubber blanket, be fixed ring 5-4, insert screw by screw 4-4 and tighten
Fasten.
4) filling electrolyte by liquid injection hole 4-3, be then bonded and sealed liquid injection hole 4-3, i.e. obtains completed device after solidification.
So far, already in connection with accompanying drawing to the present invention have been described in detail.According to above description, those skilled in the art should
When to electrochemistry sensing element of the present invention, its preparation method, applying its geophone to have clearly to recognize.
Additionally, the above-mentioned definition to each element is not limited in various concrete structures or the shape mentioned in embodiment,
It can be carried out replacing, such as with knowing simply by those of ordinary skill in the art:
(1) " interdigital arrangement " can also replace with " cross arrangement "；
(2) " one " word square groove shape can replace with " straight trough ".
In sum, the present invention provides a kind of electrochemistry sensing element, its preparation method, applies its geophone.
By using two silicon chips to do electrode and runner respectively, so that increasing is twice by electrode effective area, it is effectively increased plane micro-
The accuracy of detection of electrode electro Chemical geophone.
Particular embodiments described above, has been carried out the purpose of the present invention, technical scheme and beneficial effect the most in detail
Describe in detail bright, be it should be understood that the specific embodiment that the foregoing is only the present invention, be not limited to the present invention, all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvement etc. done, should be included in the guarantor of the present invention
Within the scope of protecting.
Claims (10)
1. an electrochemistry sensing element, it is characterised in that including:
Upper fixing element；
Lower fixture；
Stacked die group, sandwiches and is fixed between fixed part and lower fixture, multiple chip laminates form；Described many
Each chip in individual chip includes:
Upper chip layer, its tow sides are respectively provided with anode and the negative electrode of longitudinal extension；
Lower chip layer, is bonded to the surface of described upper chip layer, forms lateral isolation runner, this lateral isolation in this lower chip layer
Anode and the negative electrode of described upper chip layer are exposed by runner；
Wherein, in this stacked die group, under a upper chip, the lateral isolation runner of chip layer is close to next chip on chip layer
Anode and negative electrode；
Article two, metal wire, for being electrically connected with anode and the negative electrode of each chip on chip layer in described stacked die,
The end of these two metal wire is electrically connected on fixed part or lower fixture corresponding electrode pad.
Electrochemistry sensing element the most according to claim 1, it is characterised in that the described double-edged anode of upper chip layer
With negative electrode be interdigital structure arrange and constitute longitudinal N number of interdigital right；
Being formed with N bar insulation runner in described lower chip layer, every bar insulation runner is all by sudden and violent to anode and the negative electrode of corresponding interdigital pair
Dew.
Electrochemistry sensing element the most according to claim 2, it is characterised in that described insulation runner is that " one " font is square
Groove, is parallel to each other between each insulation runner.
Electrochemistry sensing element the most according to any one of claim 1 to 3, it is characterised in that described stacked die group
In multiple chips combine by the way of laminate adhesive or bonding；
Upper chip layer and the lower chip layer of described each chip combine by the way of adhesive bond.
Electrochemistry sensing element the most according to any one of claim 1 to 3, it is characterised in that fixed part and
Lower fixture is pcb board；
The backing material of described upper chip layer and lower chip layer is monocrystalline substrate；
Anode and the material of negative electrode in described upper chip layer be: gold, silver or platinum.
6. prepare a preparation method for electrochemistry sensing element, for preparing the electrification according to any one of claim 1 to 5
Learn sensing element, it is characterised in that including:
Step A, prepares multiple chip；
Step B, carries out laminate adhesive or bonding by the plurality of chip, obtains stacked die group；
Step C, is fixedly clamped described stacked die group with upper fixing element and lower fixture, and by core each in stacked die group
Anode and the negative electrode of sheet carry out pressure welding with corresponding wire.
Preparation method the most according to claim 6, it is characterised in that the step preparing a chip in described step A includes:
Sub-step A1, prepares tow sides and is respectively provided with the anode of longitudinal extension and the upper chip layer of negative electrode, including:
Son A1a step by step, aoxidizes the surface of monocrystal silicon；
Son A1b step by step, monocrystalline silicon surface whirl coating after oxidation, then carry out photoetching, obtain microelectrode figure, splash-proofing sputtering metal electricity
Interdigital electrode pair, stripping photoresist are made in pole, thus obtain anode and negative electrode in monocrystal silicon front；
Son A1c step by step, duplicon A1b step by step, prepare anode and negative electrode at the monocrystal silicon back side；
Sub-step A2, by lower chip layer adhesive bond to described upper chip layer；
Sub-step A3, carries out deep etching to lower chip layer, and wherein, the degree of depth of etching should be just that the silicon chip of new adhesive bond is thick
Degree, allows the electrode structure of bottom expose, and forms lateral isolation runner.
8. an electrochemistry geophone, it is characterised in that including:
Package casing；
Electrochemistry sensing element, the electrochemistry sensing element according to any one of claim 1 to 5；
Wherein, described electrochemistry sensing element is placed in described package casing, the runner of each chip and envelope in its stacked die group
The compression runner of casing is parallel；
Electrolyte solution, is sealed in described package casing, around described electrochemistry sensing element.
Electrochemistry geophone the most according to claim 8, it is characterised in that described package casing includes:
Package casing body, has the cavity of compression runner；
On be fixed ring and under be fixed ring, respectively by rubber blanket be fixed on the top of described package casing body with under
Side, it is achieved the sealing of described cavity；
Liquid injection hole and liquid outlet, be positioned at the side of described package casing body, for injecting electrolyte solution in described cavity；
Chip draw-in groove, is positioned at the notch in described package casing body front, communicates with described compression runner cavity, is used for inserting
Described electrochemistry sensing element；
Wherein, the direction of insertion of electrochemistry sensing element, be on the basis of runner direction, it is ensured that the direction of the two runner is consistent.
Electrochemistry geophone the most according to claim 9, it is characterised in that:
The material of described package casing body is lucite or the material of other electrolyte resistances corrosion；
Be fixed on described ring and under to be fixed the material of ring be rustless steel or the material of other electrolyte resistances corrosion；
Described electrolyte solution is selected from one of them of following solution: potassium iodide and the mixed solution of elemental iodine；Bromide and
The mixed solution of bromine simple substance；Or comprise the mixed solution of second order iron ion and ferric ion.
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| CN105425282A (en) * | 2015-11-10 | 2016-03-23 | 中国科学院电子学研究所 | Electrochemical geophone based on force balance feedback |
| CN105277738A (en) * | 2015-11-12 | 2016-01-27 | 中国科学院电子学研究所 | Electrochemical accelerometer and method for integrating thermistor in electrode |
| CN105540526B (en) * | 2015-12-29 | 2017-03-15 | 中国科学院电子学研究所 | The manufacture method of monolithic composite sensing electrode, based on its Sensitive Apparatus |
| CN106017515A (en) * | 2016-05-28 | 2016-10-12 | 惠州市力道电子材料有限公司 | Double-face interdigital electrode, and processing method and application thereof |
| TWI789822B (en) * | 2021-07-12 | 2023-01-11 | 研能科技股份有限公司 | Microfluidic component |
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| CA2196391A1 (en) * | 1996-01-31 | 1997-08-01 | Erik Jan Frenkel | Electrochemical sensor without calibration |
| JP4601710B1 (en) * | 2009-09-11 | 2010-12-22 | 日本写真印刷株式会社 | Narrow frame touch input sheet and manufacturing method thereof |
| CN103048680A (en) * | 2011-10-13 | 2013-04-17 | 中国科学院电子学研究所 | Electrochemical seism radiodetector based on MEMS (Micro-electromechanical Systems) technology |
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| CN1149266A (en) * | 1994-03-30 | 1997-05-07 | 尖端研究组织公司 | Improved energy storage device and methods of manufacture |
| CA2196391A1 (en) * | 1996-01-31 | 1997-08-01 | Erik Jan Frenkel | Electrochemical sensor without calibration |
| JP4601710B1 (en) * | 2009-09-11 | 2010-12-22 | 日本写真印刷株式会社 | Narrow frame touch input sheet and manufacturing method thereof |
| CN103048680A (en) * | 2011-10-13 | 2013-04-17 | 中国科学院电子学研究所 | Electrochemical seism radiodetector based on MEMS (Micro-electromechanical Systems) technology |
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