CN103457157A - Preparation method of nano laser beam combining device - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 238000000151 deposition Methods 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 28
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims description 36
- 238000005530 etching Methods 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 15
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 11
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 11
- 238000001723 curing Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 238000009499 grossing Methods 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 claims description 8
- 230000005484 gravity Effects 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
- 235000010627 Phaseolus vulgaris Nutrition 0.000 claims description 2
- 244000046052 Phaseolus vulgaris Species 0.000 claims description 2
- 230000009471 action Effects 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 230000003746 surface roughness Effects 0.000 claims description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims 1
- 238000011946 reduction process Methods 0.000 claims 1
- 239000012237 artificial material Substances 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 description 13
- 238000009826 distribution Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- 238000001035 drying Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 101000891579 Homo sapiens Microtubule-associated protein tau Proteins 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 102000057063 human MAPT Human genes 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229960001296 zinc oxide Drugs 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
The invention provides a preparation method of a nanometer laser device laser beam combining device, which comprises the following steps: preparing a curved surface multilayer film; flattening the curved surface multilayer film; thinning the curved surface multilayer film; coating and curing the sol layer; depositing a metal Ag layer on the sol layer; and repeatedly coating a sol layer and depositing an Ag layer to finally obtain the nano laser beam combining device. The nanometer laser device laser beam combining device realizes directional coupling and transmission of laser beams by utilizing an artificial material structure, overcomes the defect that the laser power of a single nanometer laser device is limited, and further realizes the beam combination of multiple beams of laser.
Description
Technical field
The present invention relates to a kind of method for preparing laser bundling device part, relate in particular to the preparation method of nano laser laser bundling device part.
Background technology
The nineteen sixty birth of first ruby laser is one of most important invention of 20th century.Since over half a century, laser is just towards small size more, faster modulating speed, more high-power, more high efficiency, the direction develop rapidly such as more low-cost.Calendar year 2001, the researcher in California, USA university Berkeley branch school produces minimum in the world laser-zinc-oxide nano laser on the nanometer photoconduction line that only has human tau hair one thousandth size.This has been a great practical application since nanometer technology is born.This class nano laser has a wide range of applications in fields such as the light interconnection of communication, biological detection, medical treatment, nano-photoetching processing, data storages.
But the problems such as the most ubiquity loss of nano laser of report is high at present, power is low, make it be subject to certain restrictions in application facet.Along with going deep into of research, find only to utilize single nano laser to realize that high power is very difficult.Therefore, in order to obtain high-power laser, adopting the method that swashs combiner is a better and practical approach.Conventional laser is closed bundle and mainly is based on the dispersion interaction of material to light, and utilizes the dispersion interaction of prism or grating to realize swashing the purpose of combiner more.And almost do not have for the sharp combiner research report of nano laser and novel artificial material structure.
Summary of the invention
The technical problem to be solved in the present invention is: for the limited deficiency of single nano laser laser power, realize Space Coupling, the transmission to laser by building the artificial material structure, and then realize the laser power that bundle improves nano laser of closing of multiple laser.
The technical scheme that the present invention solves its technical problem employing is: a kind of preparation method of nano laser laser bundling device part, and utilize multilayer film thinning technique and coated with multiple layer membrane technology to prepare the method for nano laser laser bundling device part, comprise the following steps:
Step (1), on the curved surface groove prepared the deposit multilayer film, codeposition 5-20 group, every group is comprised of 2 tunic layers, every tunic is thick=15-30nm, described multilayer film gross thickness is 150-1200nm, wherein metal A g layer and SiO
2layer alternating deposit;
Step (2), on the curved surface multilayer film, adopt to apply, curing method carries out planarization, controls the just rise and fall<10nm of plane after planarization, surface roughness RMS<2nm;
Step (3), the structure obtained in step (2) after planarization is carried out to multilayer film attenuate (etching) technique, by controlling the process conditions such as line size, incident angle, gas flow and base reservoir temperature of ion bean etcher, make the degree of depth<50nm of attenuate curved surface multilayer film afterwards;
The curable sol layer of coating one deck on curved surface multilayer film after step (4), the attenuate that obtains in step (3), sol layer can form globoidal structure under the double action of surface tension and gravity in the curved surface multilayer film, and after heating or UV-irradiation processing, sol layer solidifies; The thickness of described sol layer is 2nm to 100nm;
Deposition layer of metal Ag rete on step (5), the sol layer that obtains in step (4), the thickness of described metal A g rete is 2nm to 100nm;
Alternately apply on step (6), the metal A g layer that deposits in step (5) and solidify sol layer and deposition Ag rete, obtain the multilayer cambered surface rete that sol layer and Ag layer alternately form, until groove is filled and led up, prepare this nano laser laser bundling device part.
Curved surface multilayer film prepared in described step (1) can pass through magnetron sputtering plating, vacuum evaporation evaporation, electron beam evaporation deposition, also can adopt the hybrid mode plated film.
The smoothing material adopted in described step (2) can be also the polymer such as PMMA for ultraviolet photoresist, impression glue.
Tying technique in described step (3) can utilize RIE, IBE or ICP to realize.The selected gas of etching can be SF
6, CHF
3or Ar.
The sol layer applied in described step (4) comprises SOG or PMMA.
In described step (5), the metal A g film of deposition can utilize vacuum evaporation deposition also can utilize magnetron sputtering deposition.
The number of plies of the multilayer cambered surface rete that in described step (6), sol layer and Ag layer alternately form is the 1-20 layer.
The advantage that the present invention compared with prior art had is:
The present invention can overcome the existing limited deficiency of single nano laser laser power, realize Space Coupling, the transmission to laser by building the artificial material structure, and then the bundle that closes of realizing multiple laser improves the laser power of nano laser, simultaneously, prepared nano laser laser bundling device part has the characteristics such as compact conformation, stable performance, easy processing, is to a certain degree expanding the existing combiner technology range of application that swashs.
The accompanying drawing explanation
The flow chart that Fig. 1 is the inventive method;
Fig. 2 is the curved surface multi-layer film structure schematic diagram of preparation;
Fig. 3 is the structural representation after planarization;
Fig. 4 is the curved surface multi-layer film structure schematic diagram after attenuate;
Fig. 5 is the structural representation after coating one deck sol layer;
Fig. 6 is deposition layer of metal Ag layer structural representation on sol layer;
Fig. 7 is the nano laser laser bundling device part structural representation that coating colloidal sol layer-deposition Ag layer obtains repeatedly;
The laser bundling device part that Fig. 8 is design is restrainted effect simulation optical field distribution figure to closing of 365nm laser;
Fig. 9 is design nano laser laser bundling device part closes the bundle design sketch; Wherein, X-axis representation space position coordinates.The locational light distribution of Y-axis representation space, after closing bundle, the peak value half-breadth 400nm of light beam.
In figure: 1 is metal A g, and 2 is silicon dioxide, and 3 is planarization layer, and 4 for solidifying sol layer.
Embodiment
Introduce in detail the present invention below in conjunction with the drawings and the specific embodiments.But following embodiment only limits to explain the present invention, protection scope of the present invention should comprise the full content of claim, and can realize the full content of the claims in the present invention by following examples those skilled in the art.
(1) deposition curved surface multi-layer film structure on curved surface groove.Utilize magnetron sputtering deposition, alternating deposit metal A g and medium SiO
2, wherein metal A g adopts direct current sputtering deposition, direct current power 120w; Medium SiO
2adopt radio frequency sputtering deposition, deposition power 200w.Every tunic is thick is 20nm.10 groups 20 layers of codepositions, total film thickness is 400nm, as shown in Figure 2; 1 represents metal A g; 2 represent silicon dioxide.
(2) adopt the mode that applies the AZ-3100 photoresist to carry out planarization, rotating speed 4000rpm, spin coating time 40s cures 1h on the hot plate of 120 ℃.Glue is thick is 1000nm, as shown in Figure 3; 3 represent planarization layer.
(3) carry out attenuate curved surface multilayer film by the IBE etching.At first by the research to plane multilayer film and smoothing material etch rate under different incidence angles and different ion beam current condition, obtain the distribution curve that etch rate changes with incident angle and ion beam current, filter out etching multilayer film and smoothing material speed and differ minimum or consistent process conditions, then utilize IBE to carry out etching.At first select ion beam current 20mA, 60 ° of incident angles (normal of substrate and the angle of ion beam current), adopt Ar gas to carry out etching.Wherein etching 5min carries out drying 5min after a photoresist, altogether etching 30min.The curved surface groove degree of depth after attenuate is 50nm, as shown in Figure 4.
(4) the curved surface multilayer film after the attenuate obtained in step (3), apply one deck PMMA and solidify sol layer.The curing sol layer applied can form cambered surface in groove location under the effect of surface tension and gravity, and after 120 ℃ of heating, PMMA colloidal sol solidifies layer by layer, as shown in Figure 5; Sol layer is solidified in 4 representatives.
(5) deposition layer of metal Ag layer on the curing sol layer obtained in step (4), the mode of employing magnetron sputtering deposition, deposition thickness 20nm, as shown in Figure 6.
(6) continue to apply PMMA on the Ag film plated and solidify sol layer in step (5), then deposit the Ag layer, repeat altogether 2 times, just obtain nano laser laser bundling device part structure, as shown in Figure 7.
(1) deposition curved surface multi-layer film structure on the curved surface groove prepared.Utilize the evaporation coating mode to deposit, alternating deposit metal A g and medium SiO
2, wherein metal A g adopts the thermal evaporation deposition; Medium SiO
2adopt electron-beam evaporation.Every tunic is thick is 30nm.8 groups 16 layers of codepositions, total film thickness is 480nm, as shown in Figure 2; 1 represents metal A g; 2 represent silicon dioxide.
(2) adopt the mode that applies AR-P3120 photoresist sol layer to carry out planarization, rotating speed 5000rpm, be coated with time 40s, on the hot plate of 100 ℃, cures 1h.Glue is thick is 600nm, as shown in Figure 3; 3 represent planarization layer.
(3) carry out attenuate curved surface multilayer film by the IBE etching.The selective etching multilayer film is more or less the same with etching smoothing material speed or consistent technological parameter carries out etching.Adopt ion beam current 50mA, 45 ° of incident angles.Wherein etching 3min carries out drying after a photoresist.100 ℃ of rear baking temperature, rear baking 3min, etching 15min altogether.The curved surface groove degree of depth after attenuate is 30-50nm, as shown in Figure 4.
(4) the curved surface multilayer film after the attenuate obtained in step (3), apply one deck SOG and solidify sol layer.The curing sol layer applied can form cambered surface in groove location under the effect of surface tension and gravity, and after 100 ℃ of heating, dielectric layer solidifies, as shown in Figure 5; Sol layer is solidified in 4 representatives.
(5) deposition layer of metal Ag layer on the curing sol layer obtained in step (4), the mode that adopts thermal evaporation to deposit, deposition thickness 20-30nm, as shown in Figure 6.
(6) continue to apply AR-P3170 on the Ag film plated and solidify sol layer in step (5), then deposit the Ag layer, repeatedly repeat 3 times altogether, just obtain nano laser laser bundling device part structure, as shown in Figure 7.
(1) deposition curved surface multi-layer film structure on curved surface groove.Utilize magnetron sputtering deposition, alternating deposit metal A g and medium SiO2, wherein metal A g adopts direct current sputtering deposition, direct current power 120w; Medium SiO2 adopts radio frequency sputtering deposition, deposition power 200w.Every tunic is thick is 15nm.20 groups 40 layers of codepositions, total film thickness is 600nm, as shown in Figure 2; 1 represents metal A g; 2 represent silicon dioxide.
(2) adopt the mode that applies the AR-P3170 photoresist to carry out planarization, rotating speed 2000rpm, spin coating time 40s, repetitive coatings 5 times.Cure 1h on the hot plate of 120 ℃.Glue is thick is 600nm, as shown in Figure 3; 3 represent planarization layer.
(3) carry out attenuate curved surface multilayer film by the IBE etching.At first by the research to plane multilayer film and smoothing material etch rate under different incidence angles and different ion beam current condition, obtain the distribution curve that etch rate changes with incident angle and ion beam current, filter out etching multilayer film and smoothing material speed and differ consistent process conditions, then utilize IBE to carry out etching.At first select ion beam current 40mA, 75 ° of incident angles (normal of substrate and the angle of ion beam current), adopt Ar gas to carry out etching.Wherein etching 2min carries out drying 5min after a photoresist, altogether etching 20min.The curved surface groove degree of depth after attenuate is 30nm, as shown in Figure 4.
(4) the curved surface multilayer film after the attenuate obtained in step (3), apply one deck PMMA and solidify sol layer.The curing sol layer applied can form cambered surface in groove location under the effect of surface tension and gravity, and after 180 ℃ of heating, PMMA colloidal sol solidifies layer by layer, as shown in Figure 5; Sol layer is solidified in 4 representatives.
(5) deposition layer of metal Ag layer on the curing sol layer obtained in step (4), the mode of employing magnetron sputtering deposition, deposition thickness 15nm, as shown in Figure 6.
(6) continue to apply PMMA on the Ag film plated and solidify sol layer in step (5), then deposit the Ag layer, repeat altogether 3 times, just obtain nano laser laser bundling device part structure, as shown in Figure 7;
(1) deposition curved surface multi-layer film structure on curved surface groove.Utilize hydatogenesis, alternating deposit metal A g and medium SiO2, wherein metal A g adopts the mode of thermal evaporation to deposit; Medium SiO2 adopts electron-beam evaporation.Every tunic is thick is 15nm.16 groups 32 layers of codepositions, total film thickness is 480nm, as shown in Figure 2; 1 represents metal A g; 2 represent silicon dioxide.
(2) adopt the mode that applies PMMA to carry out planarization, rotating speed 3000rpm, spin coating time 50s, repetitive coatings 7 times.Cure 1h on the hot plate of 120 ℃.Glue is thick is 600nm, as shown in Figure 3; 3 represent planarization layer.
(3) carry out attenuate curved surface multilayer film by the IBE etching.At first by the research to plane multilayer film and smoothing material etch rate under different incidence angles and different ion beam current condition, obtain the distribution curve that etch rate changes with incident angle and ion beam current, filter out etching multilayer film and smoothing material speed and differ consistent process conditions, then utilize IBE to carry out etching.At first select ion beam current 50mA, 75 ° of incident angles (normal of substrate and the angle of ion beam current), adopt Ar gas to carry out etching.Wherein etching 1min carries out drying 5min after a photoresist, altogether etching 18min.The curved surface groove degree of depth after attenuate is 20nm, as shown in Figure 4.
(4) the curved surface multilayer film after the attenuate obtained in step (3), apply one deck SOG and solidify sol layer.The curing sol layer applied can form cambered surface in groove location under the effect of surface tension and gravity, and after 200 ℃ of heating, SOG colloidal sol solidifies layer by layer, as shown in Figure 5; Sol layer is solidified in 4 representatives.
(5) deposition layer of metal Ag layer on the curing sol layer obtained in step (4), the mode of employing electron-beam evaporation, deposition thickness 15nm, as shown in Figure 6.
(6) continue to apply SOG on the Ag film plated and solidify sol layer in step (5), then deposit the Ag layer, repeat altogether 2 times, just obtain nano laser laser bundling device part structure, as shown in Figure 7.
Fig. 9 is design nano laser laser bundling device part closes the bundle design sketch; Wherein, X-axis representation space position coordinates.The locational light distribution of Y-axis representation space, after closing bundle, the peak value half-breadth 400nm of light beam.
The part that the present invention does not elaborate belongs to techniques well known.
Claims (7)
1. the preparation method of a nano laser laser bundling device part, it is characterized in that: the method comprises the following steps:
Step (1), on the curved surface groove prepared the deposit multilayer film, codeposition 5-20 group, every group is comprised of 2 tunic layers, every tunic is thick=15-30nm, described multilayer film gross thickness is 150-1200nm, wherein Ag layer and SiO2 layer alternating deposit;
Step (2), on the curved surface multilayer film, adopt to apply, curing method carries out planarization, controls the just rise and fall<10nm of plane after planarization, surface roughness RMS<2nm;
Step (3), the structure obtained in step (2) after planarization is carried out to multilayer film attenuate (etching) technique, by controlling the process conditions such as line size, incident angle, gas flow and base reservoir temperature of ion bean etcher, make the degree of depth<50nm of attenuate curved surface multilayer film afterwards;
The curable sol layer of coating one deck on curved surface multilayer film after the attenuate that step (4) obtains in step (3), sol layer can form globoidal structure under the double action of surface tension and gravity in the curved surface multilayer film, after heating or UV-irradiation processing, sol layer solidifies, and the thickness of described sol layer is 2nm to 100nm;
Deposition layer of metal Ag rete on the sol layer that step (5) obtains in step (4), the thickness of described metal A g rete is 2nm to 100nm;
Alternately apply on the metal A g layer that step (6) deposits in step (5) and solidify sol layer and deposition Ag rete, obtain the multilayer cambered surface rete that sol layer and Ag layer alternately form, prepare this nano laser laser bundling device part.
2. the preparation method of a kind of nano laser laser bundling device part according to claim 1, it is characterized in that: curved surface multilayer film prepared in described step (1) can pass through magnetron sputtering plating, vacuum vapor plating, electron beam evaporation deposition, also can adopt the hybrid mode plated film.
3. the preparation method of a kind of nano laser laser bundling device part according to claim 1 is characterized in that: the smoothing material adopted in described step (2) can be also the polymer such as PMMA for ultraviolet photoresist, impression glue.
4. the preparation method of a kind of nano laser laser bundling device part according to claim 1, it is characterized in that: the reduction process of described step (3) mean camber multilayer film can utilize RIE, IBE or ICP to realize,, the selected gas of etching can be SF6, CHF3 or Ar.
5. the preparation method of a kind of nano laser laser bundling device part according to claim 1 is characterized in that: the sol layer applied in described step (4) comprises SOG or PMMA.
6. the preparation method of a kind of nano laser laser bundling device part according to claim 1 is characterized in that: in described step (5), the metal A g film of deposition can utilize vacuum evaporation deposition, also can utilize magnetron sputtering deposition.
7. the preparation method of a kind of nano laser laser bundling device part according to claim 1 is characterized in that: in described step (6) sol layer and Ag layer alternately the number of plies of the multilayer cambered surface rete of composition be the 1-20 layer.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040047388A1 (en) * | 2002-06-17 | 2004-03-11 | Jian Wang | Optical device and method for making same |
| CN1567002A (en) * | 2003-06-10 | 2005-01-19 | 武汉光迅科技有限责任公司 | Nano level grating for polarization beam division / combination and method for making same |
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| CN102633229A (en) * | 2012-04-13 | 2012-08-15 | 中国科学院光电技术研究所 | Method for preparing superlens with planar imaging surface by using twice ion beam etching technology |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040047388A1 (en) * | 2002-06-17 | 2004-03-11 | Jian Wang | Optical device and method for making same |
| CN1567002A (en) * | 2003-06-10 | 2005-01-19 | 武汉光迅科技有限责任公司 | Nano level grating for polarization beam division / combination and method for making same |
| CN102621822A (en) * | 2012-04-13 | 2012-08-01 | 中国科学院光电技术研究所 | Lens for realizing curved surface to plane super-resolution reduction imaging photoetching |
| CN102633229A (en) * | 2012-04-13 | 2012-08-15 | 中国科学院光电技术研究所 | Method for preparing superlens with planar imaging surface by using twice ion beam etching technology |
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| CHANGTAO WANG等: "Far field observation and theoretical analyses of light directional imaging in metamaterial with stacked metal-dielectric films", 《APPLIED PHYSICS LETTERS》 * |
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