CN103457118A - 一种装有垫片的射频线圈连接器 - Google Patents
一种装有垫片的射频线圈连接器 Download PDFInfo
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- CN103457118A CN103457118A CN2012101706643A CN201210170664A CN103457118A CN 103457118 A CN103457118 A CN 103457118A CN 2012101706643 A CN2012101706643 A CN 2012101706643A CN 201210170664 A CN201210170664 A CN 201210170664A CN 103457118 A CN103457118 A CN 103457118A
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CN2012101706643A CN103457118A (zh) | 2012-05-29 | 2012-05-29 | 一种装有垫片的射频线圈连接器 |
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CN2012101706643A CN103457118A (zh) | 2012-05-29 | 2012-05-29 | 一种装有垫片的射频线圈连接器 |
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CN103457118A true CN103457118A (zh) | 2013-12-18 |
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CN2012101706643A Pending CN103457118A (zh) | 2012-05-29 | 2012-05-29 | 一种装有垫片的射频线圈连接器 |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1672237A (zh) * | 2002-07-31 | 2005-09-21 | 兰姆研究有限公司 | 用于调整带电的法拉第屏蔽上的电压的方法 |
JP2011252233A (ja) * | 2011-07-15 | 2011-12-15 | Yamaguchi Prefectural Industrial Technology Institute | 薄膜の成膜方法 |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1672237A (zh) * | 2002-07-31 | 2005-09-21 | 兰姆研究有限公司 | 用于调整带电的法拉第屏蔽上的电压的方法 |
JP2011252233A (ja) * | 2011-07-15 | 2011-12-15 | Yamaguchi Prefectural Industrial Technology Institute | 薄膜の成膜方法 |
Non-Patent Citations (1)
Title |
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王福贞,马文存: "《气相沉积应用技术》", 31 January 2007, article "射频离子镀", pages: 119-120 * |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140521 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140521 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20131218 |