CN103442521B - A kind of method preparing vertical cavity on ltcc substrate - Google Patents
A kind of method preparing vertical cavity on ltcc substrate Download PDFInfo
- Publication number
- CN103442521B CN103442521B CN201310381713.2A CN201310381713A CN103442521B CN 103442521 B CN103442521 B CN 103442521B CN 201310381713 A CN201310381713 A CN 201310381713A CN 103442521 B CN103442521 B CN 103442521B
- Authority
- CN
- China
- Prior art keywords
- film
- diaphragm
- vertical cavity
- lamination
- bar block
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Devices For Post-Treatments, Processing, Supply, Discharge, And Other Processes (AREA)
- Laminated Bodies (AREA)
Abstract
The invention discloses a kind of can improve vertical cavity quality and improve the method preparing vertical cavity on ltcc substrate of vertical cavity performance.The method first chooses diaphragm A, film B, diaphragm C; Then film B is cut into film D; Diaphragm C cuts and removes the part consistent with film D length and width; Then choose the diaphragm A lamination one by one of some, and in the process of lamination, put into diaphragm C and film D; Multilayer Film after lamination is pressed into fine and close bar block; Adopt cutter to cut bar block, after having cut, the vertical cavity needed for being formed is removed in unnecessary stripping and slicing and film D.The method is the mode that after first the Multilayer Film after lamination being pressed into fine and close bar block, cutting forms vertical cavity, which can improve the quality of vertical cavity greatly, the problem introducing impurity and pollution in sintering procedure can be avoided again simultaneously, improve the performance of vertical cavity, be adapted at LTCC ceramic substrate technical field and apply.
Description
Technical field
The present invention relates to LTCC ceramic substrate technical field, be specifically related to a kind of method preparing vertical cavity on ltcc substrate.
Background technology
Along with microwave circuit is to High Density Integration future development, this also requires that used microwave device and chip can be integrated in Mulitilayer circuit board, and to prepare vertical cavity be important means microwave device and chip being embedded in Mulitilayer circuit board.LTCC (LTCC) technology is as a kind of multi-layer substrate of main flow, the quality of the vertical cavity prepared in LTCC, as characteristics such as perpendicularity, evenness, deformation behaviors, will have a direct impact the loss of circuit, stability and reliability etc., thus be directly connected to the performance of whole circuit.
At present; the method that ltcc substrate is prepared vertical cavity is all first on the green band prepared by dry method curtain coating mode, prepare through dead slot; then the vertical cavity needed for the superposition of this green band being formed; and after passing through to take certain safeguard measure in the cavities, be pressed into fine and close bar block to use in the mode of hot water isostatic pressed.In LTCC process; it is exactly hot water isostatic pressed that the most critical affecting vertical cavity quality prepares link; if do not take any safeguard measure when carrying out hot water isostatic pressed to vertical cavity; all directions counterpressure will make vertical cavity occur, and four limits tilt, the concavo-convex and deformation such as to subside; causing cannot embedding chip; therefore, usually all can protect vertical cavity when carrying out hot water isostatic pressed, conventional safeguard measure is generally adopted in two ways: fill inlay and fill paraffin.Wherein, filling inlay is first place the spacer such as rubber, film at vertical cavity place before hot water isostatic pressed, embed the homogeneity porcelain block similar with cavity size or metal derby again, vertical cavity prepared by this mode has higher bottom surface evenness, but because the spacers such as rubber and inlay can form certain space on vertical cavity four limits, and this space will make four edges of vertical cavity occur radian to a certain degree and slight depression affecting the perpendicularity of cavity.Another mode fills paraffin in vertical cavity, pass through after isostatic pressed when binder removal, sintering, paraffin gasification to be got rid of, vertical cavity prepared by this mode has the advantage that perpendicularity is high and deformation is little, but it requires higher to firing atmosphere, sintering procedure very easily forms the carbonization of paraffin or the residue of oxide simultaneously, has an impact to the microwave property of later stage circuit.
Summary of the invention
Technical problem to be solved by this invention be to provide a kind of can improve vertical cavity quality and improve the method preparing vertical cavity on ltcc substrate of vertical cavity performance.
The present invention solves the problems of the technologies described above adopted technical scheme: the method should preparing vertical cavity on ltcc substrate, comprises the following steps:
A, select the green band prepared by dry method curtain coating mode, be designated as diaphragm A; For carrying the film carrier film of green band when selecting a curtain coating, be designated as film B; Select the green band that a thickness is consistent with film B, be designated as diaphragm C;
B, film B is cut into the figure identical with the length and width of the vertical cavity of required preparation, the film after cutting is designated as film D; Diaphragm C cuts and removes the part consistent with film D length and width, this part removed position in diaphragm C is identical with the position of vertical cavity in diaphragm C of required preparation;
C, choose the diaphragm A lamination one by one of some, when being stacked to (n-1)th layer, choosing the diaphragm C lamination obtained after step B process, and film D is placed on the empty place in diaphragm C, then the diaphragm A lamination one by one choosing some is continued, till being laminated to desired thickness;
D, the Multilayer Film after lamination is pressed into fine and close bar block;
E, the cutter being preset with the outstanding edge of a knife are adopted to cut the bar block that step D is formed, by the vertical cavity needed for unnecessary stripping and slicing and film D removal formation after cut;
F, by through step e process bar block puts into draft glue discharging furnace, sintering furnace carries out binder removal and sintering, form size multilayer that is identical, dense uniform and become porcelain substrate.
Further, in step, the thickness of diaphragm A is 50um ~ 100um, and the thickness of film B is 30 ~ 50um.
Further, in step D, the Multilayer Film after lamination is pressed into fine and close bar block by the mode of hot water isostatic pressed.
Beneficial effect of the present invention: the method preparing vertical cavity on ltcc substrate of the present invention is the mode that after first the Multilayer Film after lamination being pressed into fine and close bar block, cutting forms vertical cavity, which can ensure that vertical cavity can not produce inclination, depression and the deformation such as to cave in, and the vertical cavity of preparation to have four limit perpendicularity high, good and the reliability high of bottom surface evenness, substantially increase the quality of vertical cavity, the problem introducing impurity and pollution in sintering procedure can be avoided again simultaneously, further improve the performance of vertical cavity, and then guarantee overall performance and the reliability of circuit, in addition, the method processing is simple, without the need to transforming existing equipment, mutually compatible with the LTCC technique of maturation, be easy to batch production.
Accompanying drawing explanation
Fig. 1 is the schematic diagram after film B of the present invention cuts;
Fig. 2 is the schematic diagram after diaphragm C of the present invention cuts;
Fig. 3 is the schematic diagram after lamination of the present invention;
Fig. 4 is cutter schematic diagram of the present invention;
Fig. 5 the present invention cuts the vertical cavity schematic diagram of rear formation.
Embodiment
The method of vertical cavity should be prepared on ltcc substrate, comprised the following steps:
A, select the green band prepared by dry method curtain coating mode, be designated as diaphragm A; For carrying the film carrier film of green band when selecting a curtain coating, be designated as film B; Select the green band that a thickness is consistent with film B, be designated as diaphragm C;
B, film B is cut into the figure identical with the length and width of the vertical cavity of required preparation, as shown in Figure 1, the film after cutting is designated as film D; Diaphragm C cuts and removes the part consistent with film D length and width, as shown in Figure 2, this part removed position in diaphragm C is identical with the position of vertical cavity in diaphragm C of required preparation;
C, choose the diaphragm A lamination one by one of some, when being stacked to (n-1)th layer, choose the diaphragm C lamination obtained after step B process, and film D is placed on the empty place in diaphragm C, then the diaphragm A lamination one by one choosing some is continued, till being laminated to desired thickness, as shown in Figure 3;
D, the Multilayer Film after lamination is pressed into fine and close bar block;
E, the cutter being preset with the outstanding edge of a knife are adopted to cut the bar block that step D is formed, the structure of cutter as shown in Figure 4, after having cut, the vertical cavity needed for being formed is removed in unnecessary stripping and slicing and film D, as shown in Figure 5, due in the process of diaphragm A lamination, superpose diaphragm C and film D, therefore, as long as the blade of cutter switches in the gap between diaphragm C and film D in cutting process, both the formation of vertical cavity can have been ensured to cut out completely, turn avoid cutter other diaphragm A is cut simultaneously, ensure that accuracy and the precision of cutting,
F, by through step e process bar block puts into draft glue discharging furnace, sintering furnace carries out binder removal and sintering, form size multilayer that is identical, dense uniform and become porcelain substrate.
The method preparing vertical cavity on ltcc substrate of the present invention is the mode that after first the Multilayer Film after lamination being pressed into fine and close bar block, cutting forms vertical cavity, which can ensure that vertical cavity can not produce inclination, depression and the deformation such as to cave in, and the vertical cavity of preparation to have four limit perpendicularity high, good and the reliability high of bottom surface evenness, substantially increase the quality of vertical cavity, the problem introducing impurity and pollution in sintering procedure can be avoided again simultaneously, further improve the performance of vertical cavity, and then guarantee overall performance and the reliability of circuit, in addition, the method processing is simple, without the need to transforming existing equipment, mutually compatible with the LTCC technique of maturation, be easy to batch production.
In the above-mentioned course of processing, selected diaphragm A and the thickness of film B can according to actual conditions fixed under normal circumstances, as preferably, in step, the thickness of diaphragm A is preferably 50um ~ 100um, and the thickness of film B is preferably 30 ~ 50um.
In addition, in step D, the Multilayer Film after lamination can be pressed into fine and close bar block by existing various ways, under normal circumstances, in order to ensure the crudy of ltcc substrate, preferably, the Multilayer Film after lamination is pressed into fine and close bar block by the mode of hot water isostatic pressed.
Claims (3)
1. on ltcc substrate, prepare a method for vertical cavity, it is characterized in that comprising the following steps:
A, select the green band prepared by dry method curtain coating mode, be designated as diaphragm A; For carrying the film carrier film of green band when selecting a curtain coating, be designated as film B; Select the green band that a thickness is consistent with film B, be designated as diaphragm C;
B, film B is cut into the figure identical with the length and width of the vertical cavity of required preparation, the film after cutting is designated as film D; Diaphragm C cuts and removes the part consistent with film D length and width, this part removed position in diaphragm C is identical with the position of vertical cavity in diaphragm C of required preparation;
C, choose the diaphragm A lamination one by one of some, when being stacked to (n-1)th layer, choosing the diaphragm C lamination obtained after step B process, and film D is placed on the empty place in diaphragm C, then the diaphragm A lamination one by one choosing some is continued, till being laminated to desired thickness;
D, the Multilayer Film after lamination is pressed into fine and close bar block;
E, the cutter being preset with the outstanding edge of a knife are adopted to cut the bar block that step D is formed, by the vertical cavity needed for unnecessary stripping and slicing and film D removal formation after cut;
F, by through step e process bar block puts into draft glue discharging furnace, sintering furnace carries out binder removal and sintering, form size multilayer that is identical, dense uniform and become porcelain substrate.
2. on ltcc substrate, prepare the method for vertical cavity as claimed in claim 1, it is characterized in that: in step, the thickness of diaphragm A is 50 μm ~ 100 μm, and the thickness of film B is 30 ~ 50 μm.
3. on ltcc substrate, prepare the method for vertical cavity as claimed in claim 1 or 2, it is characterized in that: in step D, the Multilayer Film after lamination is pressed into fine and close bar block by the mode of hot water isostatic pressed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310381713.2A CN103442521B (en) | 2013-08-28 | 2013-08-28 | A kind of method preparing vertical cavity on ltcc substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310381713.2A CN103442521B (en) | 2013-08-28 | 2013-08-28 | A kind of method preparing vertical cavity on ltcc substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103442521A CN103442521A (en) | 2013-12-11 |
| CN103442521B true CN103442521B (en) | 2016-03-23 |
Family
ID=49696165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310381713.2A Expired - Fee Related CN103442521B (en) | 2013-08-28 | 2013-08-28 | A kind of method preparing vertical cavity on ltcc substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103442521B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114043606B (en) * | 2021-12-09 | 2023-08-15 | 中国振华集团云科电子有限公司 | Preparation method of ceramic substrate with island structure |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101699937A (en) * | 2009-11-04 | 2010-04-28 | 上海美维电子有限公司 | Method for producing stepped PCB board |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001230548A (en) * | 2000-02-21 | 2001-08-24 | Murata Mfg Co Ltd | Method for manufacturing multil ayer ceramic substrate |
-
2013
- 2013-08-28 CN CN201310381713.2A patent/CN103442521B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101699937A (en) * | 2009-11-04 | 2010-04-28 | 上海美维电子有限公司 | Method for producing stepped PCB board |
Non-Patent Citations (1)
| Title |
|---|
| LTCC多层互连基板工艺及优化;王浩勤等;《电子科技大学学报》;20080630;第37卷;第50-53页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103442521A (en) | 2013-12-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104284534B (en) | Super many number of plies ultra-deep cavity ltcc substrate manufacturing process | |
| CN103384444B (en) | A kind ofly protect rigid-flex combined board of internal layer windowed regions and preparation method thereof | |
| CN110828961B (en) | Manufacturing method of LTCC embedded hollow rectangular waveguide structure | |
| CN103084676A (en) | Manufacture method of three-dimensional micro electrical discharge electrode | |
| CN103687347A (en) | Manufacturing method of partial hybrid printed circuit board | |
| CN107266083A (en) | Zero shrinks the preparation method of LTCC multilayer ceramic substrates | |
| JPWO2002043455A1 (en) | Manufacturing method of ceramic multilayer substrate and unfired composite laminate | |
| CN104320919A (en) | Method for manufacturing fine graphs of LTCC substrate | |
| CN105244285A (en) | Manufacturing method of multi-step cavity on LTCC substrate | |
| CN103442521B (en) | A kind of method preparing vertical cavity on ltcc substrate | |
| JP2007027592A (en) | Ceramic package and manufacturing method therefor, ceramic package for taking many pieces, and its manufacture | |
| CN106205911A (en) | A kind of heat sensitive chip of anti-short circuit and preparation method thereof | |
| CN102592763B (en) | The preparation method of ceramic thermal resistance | |
| CN105304977B (en) | A kind of millimeter wave ceramic insulator and design method | |
| WO2019029132A1 (en) | Smd quartz crystal resonator substrate plate structure and processing method therefor | |
| CN109411889B (en) | Regular hexagon type EBG structure for antenna and manufacturing process thereof | |
| US20170151604A1 (en) | Method for manufacturing a core for moulding a blade | |
| CN102573299B (en) | Method for preparing low temperature co-fired ceramic (LTCC) level substrate | |
| CN104999574A (en) | Slicing method of super-thick multi-layered co-fired ceramics | |
| CN107105576B (en) | The production method of ladder boss printed board | |
| JP6292775B2 (en) | Manufacturing method of ceramic channel structure | |
| JP6005462B2 (en) | Ceramic parts and manufacturing method thereof | |
| CN111393171A (en) | Filter forming method and filter | |
| JP2005268692A (en) | Method for manufacturing multilayer substrate | |
| CN102569095B (en) | Method for preparing LTCC (low-temperature co-fired ceramic) substrate with channels |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160323 Termination date: 20160828 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |