CN103436229A - Chemical mechanical polishing composition for semiconductors - Google Patents
Chemical mechanical polishing composition for semiconductors Download PDFInfo
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- CN103436229A CN103436229A CN201310387809XA CN201310387809A CN103436229A CN 103436229 A CN103436229 A CN 103436229A CN 201310387809X A CN201310387809X A CN 201310387809XA CN 201310387809 A CN201310387809 A CN 201310387809A CN 103436229 A CN103436229 A CN 103436229A
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Abstract
The invention discloses a chemical mechanical polishing composition for semiconductors, which is characterized by comprising the following components in parts by weight: 1-8 parts of hydrophilic group surfactant, 4-6 parts of polyformaldehyde, 6-8 parts of zinc sulfate, 1-3 parts of magnesium sulfate, 4-9 parts of silver sulfate, 3-8 parts of copper sulfate, 2-3 parts of molecular sieve, 5-12 parts of kieselguhr, 3-10 parts of sodium borate, 4-10 parts of nano organic montmorillonite, 4-6 parts of talcum powder, 4-6 parts of zinc stearate, 2-4 parts of antioxidant, 1 part of anti-aging agent and 2-5 parts of calcium chloride. The chemical mechanical polishing slurry disclosed by the invention comprises the hydrophilic group surfactant material, and thus, can lower the surface tension between the chemical mechanical polishing material and the hydrophobic film, so that the chemical mechanical polishing material and the hydrophobic film can be attached more closely.
Description
Technical field
The present invention relates to a kind of Semiconductor Chemistry Machinery grinding composition.
Background technology
In semi-conductor is manufactured, cmp (CMP) technology can realize the planarization of whole wafer, becomes one of step important in chip manufacturing process.In cmp, cmp agent (Slurry) is one of key element of cmp technology, and its performance directly affects the quality of surface of polished.During design cmp agent, hope can reach remove that speed is high, planeness good, uniform film thickness, noresidue, the few texts of defect.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of Semiconductor Chemistry Machinery grinding composition.
For solving the problems of the technologies described above, the technical solution used in the present invention is:
A kind of Semiconductor Chemistry Machinery grinding composition, is characterized in that, comprises the material of following parts by weight: hydrophilic group tensio-active agent 1-8 part, paraformaldehyde 4-6 part, zinc sulfate 6-8 part, sal epsom 1-3 part, Sulfuric acid disilver salt 4-9 part, copper sulfate 3-8 part, molecular sieve 2-3 part, diatomite 5-12 part, Sodium Tetraborate 3-10 part, nano organic montmorillonite 4-10 part, talcum powder 4-6 part, Zinic stearas 4-6 part, oxidation inhibitor 2-4 part, 1 part, anti-aging agent, calcium chloride 2-5 part.
Cmp agent of the present invention comprises the clean property agent material in hydrophilic group surface, can reduce cmp agent and the surface tension between the water-based film just, cmp agent and coloured glaze water-based film are more fitted tightly, thereby reduce the defects such as residue on coloured glaze water-based film surface and particle, improve the effect of cmp.
Embodiment
Embodiment 1
A kind of Semiconductor Chemistry Machinery grinding composition, is characterized in that, comprises the material of following parts by weight: hydrophilic group tensio-active agent 1-8 part, paraformaldehyde 4-6 part, zinc sulfate 6-8 part, sal epsom 1-3 part, Sulfuric acid disilver salt 4-9 part, copper sulfate 3-8 part, molecular sieve 2-3 part, diatomite 5-12 part, Sodium Tetraborate 3-10 part, nano organic montmorillonite 4-10 part, talcum powder 4-6 part, Zinic stearas 4-6 part, oxidation inhibitor 2-4 part, 1 part, anti-aging agent, calcium chloride 2-5 part.
Claims (1)
1. a Semiconductor Chemistry Machinery grinding composition, is characterized in that, comprises the material of following parts by weight: hydrophilic group tensio-active agent 1-8 part, paraformaldehyde 4-6 part, zinc sulfate 6-8 part, sal epsom 1-3 part, Sulfuric acid disilver salt 4-9 part, copper sulfate 3-8 part, molecular sieve 2-3 part, diatomite 5-12 part, Sodium Tetraborate 3-10 part, nano organic montmorillonite 4-10 part, talcum powder 4-6 part, Zinic stearas 4-6 part, oxidation inhibitor 2-4 part, 1 part, anti-aging agent, calcium chloride 2-5 part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310387809XA CN103436229A (en) | 2013-08-31 | 2013-08-31 | Chemical mechanical polishing composition for semiconductors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310387809XA CN103436229A (en) | 2013-08-31 | 2013-08-31 | Chemical mechanical polishing composition for semiconductors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103436229A true CN103436229A (en) | 2013-12-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310387809XA Pending CN103436229A (en) | 2013-08-31 | 2013-08-31 | Chemical mechanical polishing composition for semiconductors |
Country Status (1)
| Country | Link |
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| CN (1) | CN103436229A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103666282A (en) * | 2013-12-13 | 2014-03-26 | 上海大学 | Abrasive particle-free polishing solution composition for computer hard disk substrate |
| CN105505319A (en) * | 2015-12-31 | 2016-04-20 | 王璐 | Efficient ceramic grinding agent |
| CN108587476A (en) * | 2018-05-25 | 2018-09-28 | 张剑 | A kind of preparation method of steel polishing agent |
-
2013
- 2013-08-31 CN CN201310387809XA patent/CN103436229A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103666282A (en) * | 2013-12-13 | 2014-03-26 | 上海大学 | Abrasive particle-free polishing solution composition for computer hard disk substrate |
| CN103666282B (en) * | 2013-12-13 | 2015-02-25 | 上海大学 | Abrasive particle-free polishing solution composition for computer hard disk substrate |
| CN105505319A (en) * | 2015-12-31 | 2016-04-20 | 王璐 | Efficient ceramic grinding agent |
| CN108587476A (en) * | 2018-05-25 | 2018-09-28 | 张剑 | A kind of preparation method of steel polishing agent |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20131211 |