CN103428450A - Solid-state image sensor and driving method - Google Patents
Solid-state image sensor and driving method Download PDFInfo
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- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
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- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
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- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
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- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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Abstract
There is provided a solid-state image sensor and a driving method. The solid-state image sensor includes a pixel circuit including a plurality of pixels and imaging a subject, a peripheral circuit provided in a vicinity of the pixel circuit and performing operation in regard to imaging, and a connection element electrically connecting, in initialization of the pixels, elements in the pixels to which a predetermined voltage is applied for initializing the pixels to the peripheral circuit with the predetermined voltage.
Description
Technical field
Present technique relates to solid state image sensor and driving method, and specifically, present technique relates to solid state image sensor and the driving method that the area that can suppress imageing sensor increases and can reduce pixel impedance.
Background technology
For example, carry out opto-electronic conversion by the incident light to from subject and carry out the imageing sensor of imaging and cause when the driving for the initialization pixel, for example the power supply when resetting the pixel of composing images transducer descend (voltage drop).The pixel count that is known that imageing sensor is more, and the decline of this power supply is just larger.
Therefore, in order to alleviate this power supply, descend, a kind of typical measure is arranged: by making for the power-supply wiring to the pixel power supply and/or the power-supply wiring of pixel itself, thicken to reduce impedance.
In addition, also has a kind of imageing sensor, in this imageing sensor, improve across two power lines as the power-supply wiring of the peripheral circuit of pixel along signal processing and common signal line, and these power lines are connected with crosspoint, this has improved signal reading speed (for example, referring to Japanese pending application No. 2008-054246).
In addition, a kind of imageing sensor has also been proposed, in this imageing sensor, improved the power unit that can supply with a plurality of predetermined potentials, and the current potential of supplying with from these power units for example can optionally switch, with distributed circuit load (, referring to Japanese pending application No. 2007-067682).
Summary of the invention
Yet, in above-mentioned technology, for the impedance that reduces pixel, power-supply wiring is thickened to have increased the wiring area of imageing sensor, that is, the area of imageing sensor, thus cause cost to raise.
In addition, improve the wire laying mode that two power lines and this two power lines all are connected to cross spider and also mean that the impedance in order to reduce power supply will make the wiring of surrounding target circuit thicken, the area that causes like this connecting up increases.In addition, the imageing sensor improved for optionally switching a plurality of power units that supply electric potential makes the area of imageing sensor increase the area corresponding to these power units.
Be desirable to provide a kind of imageing sensor that can suppress its area increase and can reduce the impedance of pixel.
According to present technique embodiment, solid state image sensor is provided, comprising: image element circuit, this image element circuit comprises a plurality of pixels and for to the subject imaging; Peripheral circuit, this peripheral circuit improves near image element circuit and the execution operation relevant to imaging; And linkage unit, this linkage unit for being electrically connected to the peripheral circuit with predetermined voltage for the unit that the initialization pixel has applied the pixel of predetermined voltage when the initialization pixel.
At peripheral circuit, when carrying out the operation relevant to imaging, linkage unit can make unit separate with the peripheral circuit electricity, should the operation relevant to imaging be different from the initialization pixel.
This predetermined voltage can be positive voltage.
This peripheral circuit can be connected to the power supply with the predetermined voltage power supply.And, by unit being connected to peripheral circuit when the initialization pixel, linkage unit can be connected to power supply by unit temporarily.
This solid state image sensor can also comprise power-supply controller of electric, this power-supply controller of electric for delivering to peripheral circuit by the power of predetermined voltage when the initialization pixel, and the power that will be different from the voltage of predetermined voltage when peripheral circuit is carried out the operation relevant to imaging is delivered to peripheral circuit, should the operation relevant to imaging be different from the initialization pixel.
This predetermined voltage can be negative voltage or zero.
According to present technique embodiment, a kind of driving method for solid state image sensor is provided, this solid state image sensor comprises: image element circuit, this image element circuit has a plurality of pixels and to the subject imaging; Peripheral circuit, this peripheral circuit improves near image element circuit and the execution operation relevant to imaging; And linkage unit, this linkage unit is for being electrically connected to peripheral circuit by the unit of pixel, the method comprises: when the initialization pixel, by linkage unit, will be electrically connected to the peripheral circuit with predetermined voltage for the unit that the initialization pixel has applied in the pixel of predetermined voltage.
The embodiment according to present technique, provide a kind of solid state image sensor, and this solid state image sensor comprises: image element circuit, and this image element circuit has a plurality of pixels and to the subject imaging; Peripheral circuit, this peripheral circuit improves near image element circuit and the execution operation relevant to imaging; And linkage unit, this linkage unit is for being electrically connected to peripheral circuit by the unit of pixel, and when the initialization pixel, this linkage unit will be electrically connected to the peripheral circuit with predetermined voltage for the unit that the initialization pixel has applied in the pixel of predetermined voltage.
According to an embodiment of present technique, can suppress imageing sensor area increase and can reduce the impedance of pixel.
The accompanying drawing explanation
Fig. 1 is the schematic diagram for explaining that power supply descends;
Fig. 2 is the schematic diagram that the Typical Disposition of solid state image sensor is shown;
Fig. 3 reduces for explanation the schematic diagram that power supply descends;
Fig. 4 is the schematic diagram that the Typical Disposition of solid state image sensor is shown;
Fig. 5 reduces for explanation the schematic diagram that power supply descends; And
Fig. 6 is the schematic diagram that the Typical Disposition of image capture device is shown.
Embodiment
Describe below with reference to the accompanying drawings preferred embodiment of the present disclosure in detail.Note that in this explanation and accompanying drawing, utilize identical Reference numeral presentation function and the essentially identical construction unit of structure, and omit these construction units of repetition of explanation.
The<the first embodiment >
[overview of present technique]
At first, the overview of present technique is described.
A large amount of pixels in imageing sensor (solid state image sensor) and/or with exposure period of all pixels wherein all mutually the driving of identical shutter method increased the quantity of the pixel simultaneously resetted, the decline of the pixel power supply that makes like this resetting of pixel cause increases.
For example, as shown in the curve C 11 in Fig. 1, in the situation of a small amount of pixel that resets at the same time, although because resetting of pixel causes occurring pixel power supply decline (moment of pixel power supply reduces), voltage drop is very little.In addition, in Fig. 1, horizontal direction is corresponding to the time, and vertical direction is corresponding to the voltage of pixel power supply.Time point when in addition, the positional representation pixel of the arrow RT11 on horizontal direction in the figure resets.
The voltage of the pixel power supply shown in curve C 11 reduces slightly when reset of pixels, and after this, immediate recovery.At this, the voltage of pixel power supply is the voltage that reset transistor is applied, and for example, the level that to take the potential setting of the floating diffusion region of each pixel be resetting voltage, is connected to the voltage of the power supply of reset transistor that is.
On the contrary, in the situation that a large amount of pixel resets simultaneously, as shown in curve C 12, when reset of pixels, the voltage of pixel power supply significantly reduces, and recovers to need the time to voltage.
As mentioned above, the wiring in making pixel and/or while thickening to reduce the impedance of pixel (pixel power supply) to the wiring of pixel, this decline of pixel power supply in the time of can alleviating when the driving for the initialization pixel for example in reset of pixels.Yet, increased like this wiring area (sensor area) in the imageing sensor, and therefore increased cost.
Therefore, in this technique, linkage unit connects peripheral circuit, and this peripheral circuit is provided near pixel and when the initialization of pixel, for example, when resetting by pixel, do not work, and when the initialization pixel conducting so that pixel is powered temporarily.That is,, when the initialization pixel, also from peripheral circuit, the terminal (drain electrode) that it has been applied to the reset transistor of supply voltage by the pixel power supply is applied to identical voltage.
At this, the example of peripheral circuit comprises: load MOS circuit, and it is load current source when selecting pixel; The ADC(analog to digital converter), to take the signal of telecommunication that the row parallel way arranges and will read from pixel be digital signal from analog signal conversion to this ADC; And driver, the driving of this driver control pixel.That is, peripheral circuit can be any circuit provided near pixel and carry out the operation about imaging.
Usually, imageing sensor there is no in the face of peripheral circuit pixel, period dynamic duty be initialised (resetting) in pixel.That is, do not carry out such as pulse signal (voltage signal) conducting that will apply pixel etc. or the operation of disconnection.Therefore, during the initialization period of pixel, peripheral circuit does not apply adverse effect thereon with being connected of pixel, such as noise, from peripheral circuit, propagates into pixel.
In addition, in this technique, when the end of the initialization operation of pixel, linkage unit disconnects, and the reset transistor in pixel and peripheral circuit mutually electricity separates, arrive pixel to prevent the noise transmission that peripheral circuit produces.
Therefore, in this technique, except the wiring of the imageing sensor in past, the linkage unit that only is provided for peripheral circuit is connected to pixel can reduce the impedance of pixel, and does not increase wiring in pixel and/or near the wiring to pixel of pixel.And therefore, the area that suppresses imageing sensor increases the cost that can reduce the shop drawings image-position sensor.
[Typical Disposition of solid state image sensor]
Then, description has been applied to the specific embodiment of the solid state image sensor of present technique.
Fig. 2 is the schematic diagram of Typical Disposition that an embodiment of the solid state image sensor of having applied present technique is shown.
Solid state image sensor 11 is such as by the CMOS(complementary metal oxide semiconductors (CMOS)) configuration such as imageing sensor.
Solid state image sensor 11 comprises: image element circuit 21, driver 22, linkage unit 23, column signal processing section 24 and linkage unit 25.
Each pixel that forms image element circuit 21 for example comprises: photoelectric transformer, such as receive the photodiode of light from subject; Floating diffusion region, the optical charge that this floating diffusion region accumulation photoelectric transformer obtains; Transfering transistor, this transfering transistor is transferred to floating diffusion region by electric charge from photoelectric transformer; Etc..
In addition, each pixel also comprises: amplifier transistor, and this amplifier transistor is converted to the signal of telecommunication by the potential change in floating diffusion region; Select transistor, the signal of telecommunication that this selection transistor is read amplifier transistor outputs to the vertical signal line be connected with the pixel of arranging in the vertical direction; Etc..
In addition, each pixel also comprises reset transistor, when the initialization pixel, for example, when reset of pixels, by by stored charge from floating diffusion region to external discharge or by electric charge is injected to floating diffusion region from outside, and the current potential of floating diffusion region is set to the level of resetting voltage.The pixel power supply is connected to the drain electrode of reset transistor, so that floating diffusion region electric discharge or by the charge injection floating diffusion region.
As mentioned above, each pixel in image element circuit 21 comprises: photoelectric transformer, floating diffusion region, transfering transistor, amplifier transistor, selection transistor and reset transistor, however pixel can have any other configuration.That is, pixel only must at least have: for the configuration of carrying out opto-electronic conversion, for reading electric charge that opto-electronic conversion obtains as the configuration of the signal of telecommunication and for the configuration of initialization pixel.
Driver 22 holding wire not shown by this is connected to the unit of each pixel that forms image element circuit 21, and utilizes the power of this not shown power supply to be controlled the driving of each pixel.
For example, each grid that 22 pairs of drivers form transfering transistor, selection transistor and the reset transistor of pixel applies voltage, and therefore to electric charge being transferred to floating diffusion region, to selecting, from it, being read the pixel of picture element signal and initialization pixel (floating diffusion region) is controlled.
In addition, driver 22 is connected to each pixel of image element circuit 21 by a plurality of linkage units 23.Each linkage unit 23 consists of switch, and this switch is connected to this not shown power supply that is connected to driver 22 by the pixel of image element circuit 21, and applies voltage by basis and carry out conducting/disconnection and pixel is applied to supply voltage.For example, the connecting terminals of the linkage unit 23 of image element circuit 21 sides is received the terminal of the reset transistor that forms the pixel that the pixel power supply is connected to, and specifically, is connected to the drain electrode of reset transistor.In addition, the terminal of the linkage unit 23 on image element circuit 21 sides is also connected to the drain electrode of amplifier transistor.
The vertical signal line provided for image element circuit 21 is provided in column signal processing section 24, and utilizes the power of this not shown power supply, and bias current is delivered to every vertical signal line.That is, column signal processing section 24 comprises load MOS circuit, as the load current source of each pixel.
In addition, the signal of telecommunication that read according to the vertical signal line from image element circuit 21 column signal processing section 24 is carried out the correlated double sampling, automatic gain is controlled processing, A/D conversion process etc., to produce the picture element signal of each pixel.The signal consisted of the picture element signal of each pixel of such acquisition will be as the picture signal of the image that the subject imaging is obtained.
In addition, column signal processing section 24 is connected to each pixel of image element circuit 21 by a plurality of linkage units 25.Each linkage unit 25 consists of switch, and this switch is connected to this not shown power supply that is connected to column signal processing section 24 by the pixel of image element circuit 21, and the voltage applied by basis carrys out conducting/disconnection and pixel is applied to supply voltage.
For example, the connecting terminals of the linkage unit 25 on image element circuit 21 sides is received the terminal of the reset transistor that forms the pixel that the pixel power supply is connected to, and, is connected to the drain electrode of reset transistor that is.In addition, the terminal of the linkage unit 25 on image element circuit 21 sides is also connected to the drain electrode of amplifier transistor.
[explanation of the operation of solid state image sensor]
Then the operation of solid state image sensor 11 will be described.
When starting by solid state image sensor 11 imaging, at first, for the several pixels in image element circuit 21, driver 22 is delivered to strobe pulse (voltage) the transistorized grid of selection that forms pixel, and this pixel is set to just selecteed state, that is, be set to the signal of telecommunication and will output to from pixel the state of vertical signal line.
In this stage, the vertical signal line of image element circuit 21 is set to the state of 24 bias currents of supplying with from the column signal processing section.In addition, in this state, the switch of linkage unit 23 and linkage unit 25 disconnects, and therefore, and driver 22 and column signal processing section 24 are not electrically connected to the drain electrode of the reset transistor in the pixel of image element circuit 21.
Subsequently, carry out the initialization (resetting) of selected pixel with reset pulse.That is, the grid of the reset transistor of the selected pixel of 22 pairs of formation image element circuits 21 of driver applies reset pulse (voltage), and connects grid.
Then, floating diffusion region is electrically connected to the pixel power supply by reset transistor, and the initialization of floating diffusion region (that is, pixel) experience.In addition, when the initialization pixel, the transfering transistor in the selected pixel in image element circuit 21 disconnects, and does not allow electric charge to transfer to floating diffusion region from photoelectric transformer.
In addition, when the gate turn-on of reset transistor, voltage is applied to linkage unit 23 and linkage unit 25, with by switch conduction.Therefore, the terminal (drain electrode) be positioned on reset transistor one side that the pixel power supply is connected to is electrically connected to driver 22 and column signal processing section 24 by linkage unit 23 and linkage unit 25.That is the terminal that, has applied the reset transistor of predetermined voltage because of the pixel power supply is electrically connected to the peripheral circuit (such as driver 22 and column signal processing section 24) that has been applied in identical voltage.
In other words, the terminal of the reset transistor on the pixel mains side is electrically connected to the power supply that is connected to driver 22 and/or column signal processing section 24.At this, the pixel power supply that is connected to reset transistor is the power supply of same positive voltage with the power supply that is connected to driver 22 and/or column signal processing section 24.
As mentioned above, pixel is connected to power supply by linkage unit 23 and/or linkage unit 25 temporarily, therefore, can reduce the impedance of pixel (pixel power supply), therefore can reduce because the power supply that the initialization pixel causes descends.
In addition, in the initialization (resetting) of pixel during the period, for example, reset pulse (voltage) is delivered to the grid of the reset transistor pixel from driver 22, and/or vertical signal line is delivered to by bias current in column signal processing section 24.Yet, during the period that resets of pixel, the voltage (pulse) that the unit in the 24 pairs of pixels in driver 22 and/or column signal processing section is supplied with is fixed, and does not carry out the dynamic operation such as the on/off grid.Therefore, during the period that resets of pixel, can think, the peripheral circuit such as driver 22 and column signal processing section 24 is not worked.
When reset of pixels, driver 22 disconnects the grid of the reset transistor that forms selected pixel, thus not initialization floating diffusion region.
In this stage, the switch of linkage unit 23 and linkage unit 25 disconnects, and therefore, the terminal of the reset transistor on the pixel mains side separates with column signal processing section 24 electricity with driver 22.That is, the terminal of the reset transistor on the pixel mains side separates with the power supply electricity that is connected to driver 22 and/or column signal processing section 24.
As mentioned above, after the initialization of pixel, because carry out the read operation of picture element signal after the initialization of the pixel in solid state image sensor 11, so the terminal of the reset transistor on the pixel mains side separates with driver 22 and/or column signal processing section 24.
In read operation, image element circuit 21, be positioned at the dynamic operations such as near driver 22 it and column signal processing section 24.Therefore, if the switch of linkage unit 23 and linkage unit 25 keeps conducting, noise propagates into pixel by the power supply of driver 22 and/or column signal processing section 24.
Therefore, in solid state image sensor 11, during near the initialization period of inactive pixel this pixel, the switch conduction of linkage unit 23 and linkage unit 25, reduce the impedance of pixel to allow driver 22 and/or column signal processing section 24.Then, when near the operation of pixel, the switch of linkage unit 23 and linkage unit 25 disconnects, to suppress noise transmission to pixel.
Therefore, near the width of power-supply wiring image element circuit 21 and/or its can retain narrowly, and therefore, the increase of the area that can suppress to connect up, that is and, the area of solid state image sensor 11 increases, and can reduce the impedance of pixel (pixel power supply).In addition, the increase of inhibition wiring area can reduce the cost of shop drawings image-position sensor (solid state image sensor 11).
After the initialization pixel, from pixel, read picture element signal.In addition, when the initialized end of pixel, select transistorized gate turn-on, and the grid of transfering transistor and reset transistor disconnects.In addition, the switch of linkage unit 23 and linkage unit 25 disconnects.
In this state, the voltage on vertical signal line is read in column signal processing section 24, as reset level.
Then, the grid that 22 pairs of drivers form the transfering transistor of the selected pixel in image element circuit 21 applies transfer pulse (voltage), allows the electric charge be accumulated in photoelectric transformer in the period before current time to transfer to floating diffusion region.After this, the grid of transfering transistor disconnects, and this allows to shift the grid that pulse is not applied to transfering transistor.
Owing to electric charge being transferred to floating diffusion region, allow the current potential of floating diffusion region to change, so the voltage of vertical signal line is read in column signal processing section 24, as signal level.In addition, driver 22 disconnects the transistorized grid of the selection of selected pixel, thereby this pixel is separated with vertical signal line.
In addition, the reset level that column signal processing section 24 output is read and signal level poor, as the value of picture element signal.In this stage, carry out as required A/D conversion process and/or automatic gain and control processing.After this, when the selected pixel of switching, solid state image sensor 11 repeats the number of times of above-mentioned processing requirements, then, finishes imaging.
As mentioned above, solid state image sensor 11 is carried out imagings, and the picture signal that consists of the picture element signal of each pixel of output.
In solid state image sensor 11, the power supply of driver 22 and/or column signal processing section 24 is connected to the decline that selected pixel makes the power supply caused in the time of can reducing for example initialization pixel when the initialization pixel in order to reduce impedance, as shown in Figure 3.
In addition, in Fig. 3, horizontal direction is corresponding to the time, and vertical direction is corresponding to voltage.Time point when in addition, the positional representation pixel of the arrow RT21 on horizontal direction is initialised (resetting) in the figure.
In Fig. 3, curve C 21 be illustrated in the situation that during the initialization pixel driver 22 and/or column signal processing section 24 be free of attachment to selected pixel, according to the voltage (that is, the voltage of the terminal of the reset transistor on mains side) of the pixel power supply of time.Relatively, C22 be illustrated in the situation that during the initialization pixel power supply of driver 22 and/or column signal processing section 24 be connected to selected pixel, according to the voltage of the pixel power supply of time.
In addition, the voltage that curve C 23 for example means, according to the time, near peripheral circuit that be arranged in image element circuit 21 (driver 22 and column signal processing section 24), and broken line C24 means to deliver to the voltage signal (pulse) of linkage unit 23 and linkage unit 25.
At this, the voltage of the voltage signal that broken line C24 means, during the period with curve protruding upward, is the voltage that forms the switch conduction of linkage unit 23 and linkage unit 25, and, during other periods, is the voltage that switch disconnects.In this example, form the immediately conducting before the initialization pixel of switch of linkage unit 23 and linkage unit 25.
In the example of Fig. 3, when in the initialization pixel, when the power supply of driver 22 and/or column signal processing section 24 is not connected to selected pixel, as shown in curve C 21, when the initialization pixel, the voltage of pixel power supply significantly reduces, and recovers to need the time to voltage.
On the contrary, when in the initialization pixel, when the power supply that the voltage signal that broken line C24 means is sent to linkage unit 23 and linkage unit 25 and driver 22 and/or column signal processing section 24 is connected to selected pixel, the voltage of pixel power supply changes, as shown in curve C 22.
That is, although when the initialization pixel, the voltage of the pixel power supply that curve C 22 means reduces slightly, with the reduction amount that curve C 21 means, compares, and the reduction amount significantly reduces, and the decline momentary recovery of power supply.
In addition, in this case, because the power supply of driver 22 and/or column signal processing section 24 is connected to pixel, so also reduce slightly when the initialization pixel such as the voltage of the peripheral circuit of driver 22 and column signal processing section 24, and after this, immediate recovery, as shown in curve C 23.
From curve C 22 and curve C 23, can find out, in solid state image sensor 11, although the decline slightly of power supply occurs when the initialization pixel, the decline momentary recovery of power supply, this allows solid state image sensor 11 to operate rapidly.
In addition, the voltage of the peripheral circuit that curve C 23 means for example, according to the operation of peripheral circuit,, after the initialization pixel, that is, and after the time point meaned at arrow D11, for from read output signals such as pixels and voltage is delivered to the operation of the unit in pixel, and change up and down with small amplitude.Disconnection after the time point meaned at arrow D11 due to the switch that forms linkage unit 23 and linkage unit 25, so noise does not propagate into pixel from peripheral circuit.
As mentioned above, in the initialization period of pixel, the power supply of driver 22 and/or column signal processing section 24 is connected to selected pixel continuously, and power supply only must be connected to pixel during at least part of period in initialization period.Specifically, as long as when connecting the grid of reset transistor, that is, and when starting reset of pixels, the power supply of driver 22 and/or column signal processing section 24 is connected to selected pixel, and finishing the time point of this connection can be before finishing initialization or afterwards.
In addition, it is identical that the period that the power supply of driver 22 is connected to pixel can be connected to the power supply of column signal processing section 24 period of this pixel, also can be different.
The<the second embodiment >
[Typical Disposition of solid state image sensor]
Incidentally, also there is the supply voltage situation different from the voltage of pixel power supply of supplying with peripheral circuit.In this case, under the situation do not broken down at pixel and peripheral circuit, voltage pixel applied by peripheral circuit can with the voltage matches of pixel power supply, so that peripheral circuit is connected to pixel.
In this case, for example, configure as shown in Figure 4 solid state image sensor.In addition, in Fig. 4, utilize identical Reference numeral to mean the part corresponding with the part in Fig. 2, and suitably omit and describe them.
Solid state image sensor 51 shown in Fig. 4 comprises: image element circuit 21, driver 22, linkage unit 23, column signal processing section 24, linkage unit 25, power control circuit 61, linkage unit 62, linkage unit 63, linkage unit 64 and linkage unit 65.That is, solid state image sensor 51 comprises that solid state image sensor in Fig. 2 11 is additional provides the configuration to linkage unit 65 of power control circuit 61 and linkage unit 62.
In this example, deliver to the voltage VDD of pixel power supply of drain electrode of the reset transistor of each pixel that forms image element circuit 21
pixOn amplitude and for driven the voltage VDD of the power supply of image element circuits 21 by driver 22 and/or column signal processing section 24
PeriDifferent.
Due to voltage VDD
pixWith VDD
PeriDifference, so voltage VDD for example
pixValue be limited to pixel and peripheral circuit does not break down, thereby or in specified pixel and/or the trouble-proof scope of peripheral circuit.
For example, when the initialization pixel, the switch conduction of linkage unit 62, and the switch of linkage unit 63 disconnects.Therefore, when the initialization pixel, power is delivered to driver 22 with the voltage identical with the pixel power supply from power control circuit 61.
In addition, the period outside the initialization pixel, the switch of linkage unit 62 disconnects, and the switch conduction of linkage unit 63, this allow power with voltage VDD
PeriIdentical voltage is delivered to driver 22 from power control circuit 61.
Similar with driver 22, power control circuit 61 and column signal processing section 24 are connected to each other by linkage unit 64 and the linkage unit 65 consisted of switch etc.Linkage unit 64 and linkage unit 65 consist of switch etc., and apply voltage by basis switch conduction/disconnection is delivered to column signal processing section 24 by power.
For example, when the initialization pixel, the switch conduction of linkage unit 64, and the switch of linkage unit 65 disconnects.Therefore, when the initialization pixel, power is with the voltage VDD with the pixel power supply
pixIdentical voltage is delivered to column signal processing section 24 from power control circuit 61.
In addition, during the period outside the initialization pixel, the switch of linkage unit 64 disconnects, and the switch conduction of linkage unit 65, this allow power with voltage VDD
PeriIdentical voltage is delivered to column signal processing section 24 from power control circuit 61.
For example, in solid state image sensor 51, control connection unit 62 and linkage unit 64 with conducting when linkage unit 23 and linkage unit 25 conducting, and disconnect when linkage unit 23 and linkage unit 25 disconnect.Relatively, control connection unit 63 and linkage unit 65, to disconnect when linkage unit 23 and linkage unit 25 conducting, and conducting when linkage unit 23 and linkage unit 25 disconnect.
[explanation of the operation of solid state image sensor]
The solid state image sensor 51 as above mode identical with the solid state image sensor 11 shown in Fig. 2 is basically worked.Yet the voltage of delivering to the power of driver 22 and column signal processing section 24 from power control circuit 61 respectively when the initialization pixel and in the period outside the initialization pixel is switched.
That is, before the initialization pixel, the switch of linkage unit 62 and linkage unit 64 disconnects, and the switch conduction of linkage unit 63 and linkage unit 65.
Therefore, voltage VDD
PeriPower deliver to driver 22 and column signal processing section 24 from power control circuit 61, and driver 22 and column signal processing section 24 is according to the power drive image element circuit 21 of supplying with like this.For example, about forming several pixels of image element circuit 21, driver 22 is by voltage VDD
PeriStrobe pulse be applied to the transistorized grid of selection that forms pixel.
In addition, in this state, the switch of linkage unit 23 and linkage unit 25 disconnects.
Then, when the initialization pixel, more particularly, and immediately before the initialization of carrying out pixel, the switch conduction of linkage unit 62 and linkage unit 64, and the switch of linkage unit 63 and linkage unit 65 disconnects.Therefore, voltage VDD
pixPower deliver to driver 22 and column signal processing section 24 from power control circuit 61.
Meanwhile, the switch conduction of linkage unit 23 and linkage unit 25.Therefore, the terminal that is positioned at the reset transistor on the side that the pixel power supply connects is electrically connected to driver 22 and column signal processing section 24 by linkage unit 23 and linkage unit 25.That is, voltage VDD
pixBe applied to the terminal of the reset transistor on the pixel mains side from the power control circuit 61 that is connected to driver 22 and/or column signal processing section 24.
In addition, when the initialization pixel, driver 22 is applied to reset pulse (voltage) grid of the reset transistor of the selected pixel that forms image element circuit 21, and connects this grid, with the initialization pixel.In this stage, the voltage that the grid of reset transistor is applied is VDD
pix.
As mentioned above, pixel is connected to power supply by linkage unit 23 and/or linkage unit 25 temporarily, therefore, can reduce the impedance of pixel, and the power supply that therefore can reduce to cause due to the initialization pixel descends.
By disconnected the grid of the reset transistor that forms selected pixel, the initialization of end pixel by driver 22.
In this stage, the switch of linkage unit 23 and linkage unit 25 disconnects, and the terminal that is positioned at the reset transistor on the pixel mains side separates with column signal processing section 24 electricity with driver 22.Meanwhile, the switch of linkage unit 62 and linkage unit 64 disconnects, and the switch conduction of linkage unit 63 and linkage unit 65.Therefore, at voltage VDD
PeriPower deliver to driver 22 and column signal processing section 24 from power control circuit 61.
With after the power supply of driver 22 and column signal processing section 24 separates, carry out the operation of from selected pixel, reading picture element signal in the selected pixel that finishes initialization pixel and image element circuit 21.
In this stage, driver 22 and/or column signal processing section 24 utilize the voltage VDD supplied with from power control circuit 61
PeriPower drive image element circuit 21.For example, driver 22 is by voltage VDD
PeriThe transfer pulse deliver to the grid of the transfering transistor that forms pixel, the operation of reading picture element signal with execution.
As mentioned above, the period that solid state image sensor 51 switches in outside the initialization period of the initialization period of pixel and pixel is delivered to respectively the voltage of the power of driver 22 and column signal processing section 24 from power control circuit 61.In the initialization period of pixel, with the voltage VDD initially applied
PeriDifferent voltage VDD
pixBe applied to the unit such as reset transistor of the pixel of driver 22 and formation image element circuit 21.Therefore, prerequisite is at voltage VDD
pix, peripheral circuit and image element circuit 21 such as driver 22 and/or column signal processing section 24 do not break down or do not damage.
According to aforesaid operations, in solid state image sensor 51, when the initialization pixel, the power supply of driver 22 and/or column signal processing section 24 is electrically connected to selected pixel, and this makes the impedance that can reduce pixel.Therefore, for example, as shown in Figure 5, the power supply that can reduce to cause due to the initialization pixel descends.
In addition, in Fig. 5, horizontal direction is corresponding to the time, and vertical direction is corresponding to voltage.In addition, the time point during positional representation pixel initialization of the arrow RT31 on horizontal direction in the figure.
In Fig. 5, curve C 31 be illustrated in the situation that during the initialization pixel power supply of driver 22 and/or column signal processing section 24 be connected to the voltage of selected pixel according to the pixel power supply of time.In addition, curve C 32 means the voltage according to the peripheral circuit that is arranged near for example driver 22 of image element circuit 21 or column signal processing section 24 and so on of time.
In addition, broken line C33 means to deliver to the voltage signal (pulse) of linkage unit 23, linkage unit 25, linkage unit 62 and linkage unit 64.At this, the voltage of the voltage signal that broken line C33 means is during the period with curve protruding upward, be the voltage that forms the switch conduction of linkage unit 23, linkage unit 25, linkage unit 62 and linkage unit 64, and, in other periods, be the voltage that switch disconnects.
In the example depicted in fig. 5, the voltage signal that broken line C33 means is delivered to linkage unit 23, linkage unit 25, linkage unit 62 and linkage unit 64, and, when the initialization pixel, the power supply of driver 22 and/or column signal processing section 24 is connected to selected pixel.Under these situations, the voltage of pixel power supply changes as shown in curve C 31.
That is, although the voltage of the pixel power supply that curve C 31 means when the initialization pixel reduces slightly, the small and power supply decline momentary recovery of reduction amount.
In addition, in this case, because the power supply of driver 22 and/or column signal processing section 24 is connected to pixel, so after this, while also reducing slightly such as the voltage of the peripheral circuit of driver 22 and column signal processing section 24 when in reset of pixels, it is immediate recovery as shown in curve C 32.
From curve C 31 and curve 32, can find out, in solid state image sensor 51, although power supply reduces slightly during reset of pixels, the decline momentary recovery of power supply, this allows solid state image sensor 51 to operate rapidly.
In addition, the voltage of the peripheral circuit that curve C 32 means is in the initialization period of pixel, more particularly, in the period of the switch conduction of linkage unit 62 and linkage unit 64, is VDD basically
pix, and, in other periods, be VDD
Peri.
In addition, the voltage of the peripheral circuit meaned for, curve C 32 according to in initialization after the pixel, that is, after the time point meaned at arrow D21, from the operation of the peripheral circuit of the operation of the read output signals such as pixel, with small amplitude, change up and down.Yet disconnection after the time point meaned at arrow D21 due to the switch that forms linkage unit 23 and linkage unit 25, so noise does not propagate into pixel from peripheral circuit.
As mentioned above, according to present technique, when the initialization pixel, pixel is electrically connected to the power supply of peripheral circuit, and, during the period of peripheral circuit dynamic operation, pixel is separated with the power supply of peripheral circuit, this area that can suppress imageing sensor increases, and can reduce the impedance of pixel.
Incidentally, the above be take column signal processing section 24 and driver 22 and has been described peripheral circuit as example, but peripheral circuit can be near any parts of dynamic operation not image element circuit 21 and in the initialization pixel time.For example, peripheral circuit can comprise the circuit of carrying out the correlated double sampling and/or the circuit of carrying out the A/D conversion.
In addition, the above has described the power-supply wiring that the power supply of peripheral circuit is connected to the pixel power supply for example, yet present technique can be applied to GND wiring (ground connection wiring) and/or for wiring and the power-supply wiring of negative bias.That is the unit, for the initialization pixel, its unit applied in the pixel of predetermined voltage can be electrically connected to the peripheral circuit that has applied identical voltage.
At this, predetermined voltage can be positive voltage, negative voltage and 0(0V) in any.For example, in the situation that form the reset transistor of pixel, be the P channel MOS transistor, the ground of reset transistor only is connected to the ground of peripheral circuit during the initialization period of pixel.
[Typical Disposition of image capture device]
In addition, present technique can also be applied to all types of electronic equipments, in this electronic equipment, solid state image sensor is as image acquisition section (photoelectric conversion section), such as the image capture device such as digital camera and video camera, the portable terminal with image capturing functionality and the solid state image sensor photocopier as image acquisition section.Solid state image sensor can be integrated in a chip, can be also the concentrated module that has encapsulated image-generating unit and signal processing unit or optical system with image capturing functionality.
Fig. 6 illustrates the schematic diagram of image capture device as the Typical Disposition of the electronics of having applied present technique.
Image capture device 91 in Fig. 6 comprises: the optical unit 101 formed by camera lens etc., solid state image sensor (imaging device) 102 and as the DSP(digital signal processor of camera signal treatment circuit) circuit 103.In addition, image capture device 91 also comprises: frame memory 104, display unit 105, record cell 106, actuation unit 107 and power subsystem 108.DSP circuit 103, frame memory 104, display unit 105, record cell 106, actuation unit 107 and power subsystem 108 are connected to each other by bus 109.
The incident light (image light) that optical unit 101 gathers from subject, to be imaged on it on imaging surface of solid state image sensor 102.For each pixel, the light quantity that solid state image sensor 102 images in the incident light on imaging surface by optical unit 101 is converted to the signal of telecommunication, thereby it is exported as picture element signal.Solid state image sensor 102 is corresponding to solid state image sensor 11 above-mentioned and solid state image sensor 51.
In addition, in the above-described embodiments, described for example and arranged the application of the cmos image sensor of pixel according to the light quantity detection signal electric charge of the visible ray as physical quantity to usining matrix shape, yet, present technique is not limited to the application in this cmos image sensor, and can be applied to all types of solid state image sensors.
In addition, present technique is not limited to the distribution of the incident light quantity to detecting visible ray they are imaged as to the application of the solid state image sensor of picture, and can be applied to the distribution of the amount of incident of infrared ray, X ray, particle etc. is imaged as the solid state image sensor of picture.
Those skilled in the art it should be understood that according to designing requirement and other factors, it is contemplated that various modifications, combination, part combination and modification, yet they all fall in appended claims or its scope be equal to.
In addition, can also configure as follows present technique:
(1) a kind of solid state image sensor comprises:
Image element circuit, comprise a plurality of pixels and to the subject imaging;
Peripheral circuit, be provided near and the execution operation relevant to imaging of image element circuit; And
Linkage unit will be electrically connected to the peripheral circuit with predetermined voltage for the unit that the initialization pixel applies in the pixel of predetermined voltage when the initialization pixel.
(2) according to (1) described solid state image sensor,
Wherein, when peripheral circuit is being carried out the operation relevant to imaging, linkage unit separates unit with the peripheral circuit electricity, is somebody's turn to do the initialization that the operation relevant to imaging is different from pixel.
(3) according to (1) or (2) described solid state image sensor,
Wherein, predetermined voltage is positive voltage.
(4) according to (3) described solid state image sensor,
Wherein, peripheral circuit is connected to the power supply with the predetermined voltage power supply, and
Wherein, by unit being connected to peripheral circuit when the initialization pixel, linkage unit is connected to power supply by unit temporarily.
(5) according to (3) described solid state image sensor, also comprise
Power-supply controller of electric, when the initialization pixel, the power of predetermined voltage is delivered to peripheral circuit, and the power that will be different from the voltage of predetermined voltage when peripheral circuit is being carried out the operation relevant to imaging is delivered to peripheral circuit, be somebody's turn to do the initialization that the operation relevant to imaging is different from pixel.
(6) according to (1) or (2) described solid state image sensor,
Wherein, predetermined voltage is negative voltage or zero.
The disclosure contains the relevant theme of theme disclosed with the JP2012-115409 Japanese priority patent application of submitting on May 21st, 2012 to Japan Office, at this, comprises by reference the full content of this patent application.
Claims (7)
1. a solid state image sensor comprises:
Image element circuit, comprise a plurality of pixels and to the subject imaging;
Peripheral circuit, be provided near and the execution operation relevant to imaging of described image element circuit; And
Linkage unit, the unit that will apply for the initialization pixel pixel of predetermined voltage when the initialization of pixel is electrically connected to the peripheral circuit with predetermined voltage.
2. solid state image sensor according to claim 1,
Wherein, described linkage unit separates described unit when described peripheral circuit is being carried out the operation relevant to imaging with described peripheral circuit electricity, and the described operation relevant to imaging is different from the initialization of described pixel.
3. solid state image sensor according to claim 2,
Wherein, described predetermined voltage is positive voltage.
4. solid state image sensor according to claim 3,
Wherein, described peripheral circuit is connected to the power supply with the predetermined voltage power supply, and
Wherein, described linkage unit is by be connected to described unit described peripheral circuit and described unit is connected to power supply when the initialization of described pixel temporarily.
5. solid state image sensor according to claim 3, also comprise
Power-supply controller of electric, when the initialization of pixel, the power of predetermined voltage is delivered to described peripheral circuit, and the power that will be different from the voltage of predetermined voltage when described peripheral circuit is being carried out the operation relevant to imaging is delivered to described peripheral circuit, the described operation relevant to imaging is different from the initialization of described pixel.
6. solid state image sensor according to claim 2,
Wherein, described predetermined voltage is negative voltage or zero.
7. the driving method of a solid state image sensor, described solid state image sensor comprises:
Image element circuit, have a plurality of pixels and to the subject imaging;
Peripheral circuit, be provided near and the execution operation relevant to imaging of described image element circuit; And
Linkage unit, be electrically connected to described peripheral circuit by the unit in pixel, and the method comprises:
When the initialization of pixel, the unit that will have been applied for the initialization pixel pixel of predetermined voltage by described linkage unit is electrically connected to the peripheral circuit with predetermined voltage.
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| JP2012115409A JP2013243516A (en) | 2012-05-21 | 2012-05-21 | Solid-state imaging device and driving method |
| JP2012-115409 | 2012-05-21 |
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| JP4696788B2 (en) | 2005-08-30 | 2011-06-08 | 日本ビクター株式会社 | Solid-state imaging device |
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Application publication date: 20131204 |