CN103427041A - Flexible organic light-emitting diode anode and preparation method thereof, and flexible organic light-emitting diode - Google Patents
Flexible organic light-emitting diode anode and preparation method thereof, and flexible organic light-emitting diode Download PDFInfo
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- CN103427041A CN103427041A CN2012101641776A CN201210164177A CN103427041A CN 103427041 A CN103427041 A CN 103427041A CN 2012101641776 A CN2012101641776 A CN 2012101641776A CN 201210164177 A CN201210164177 A CN 201210164177A CN 103427041 A CN103427041 A CN 103427041A
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Abstract
The invention discloses a flexible organic light-emitting diode anode. The flexible organic light-emitting diode anode comprises a flexible substrate, a conductive film made of a PEDOT: PSS material, and a conductive metal wire layer arranged between the substrate and the conductive layer. The conductive metal wire layer is formed by a plurality of conductive metal wires. According to the flexible organic light-emitting diode anode, the conductive metal wire layer is arranged between the substrate and the conductive layer, the plurality of conductive metal wires are covered and wrapped by the conductive film so that an internal conductive network is formed and the surface resistance is decreased; and compared to a conventional flexible organic light-emitting diode anode which only adopts a conductive film made of the PEDOT: PSS material, the provided flexible organic light-emitting diode anode has improved conductive capability. The invention also provides a preparation method of such a flexible organic light-emitting diode anode with low surface resistance, and a flexible organic light-emitting diode applying the flexible organic light-emitting diode anode.
Description
Technical field
The present invention relates to Organic Light Emitting Diode and make field, particularly relate to anode of a kind of flexible Organic Light Emitting Diode and preparation method thereof, and the flexible Organic Light Emitting Diode that adopts the anode of this flexibility Organic Light Emitting Diode.
Background technology
Organic Light Emitting Diode is called for short OLED, have that brightness is high, the material range of choice is wide, driving voltage is low, entirely solidify the characteristic such as active illuminating, have high definition, wide viewing angle simultaneously, and the advantage such as fast response time, meet the development trend that information age mobile communication and information show, and the requirement of green lighting technique, be current lot of domestic and foreign researcher's focal point.
In the OLED of prior art device, the OLED device that uses glass substrate to make does not possess crooked characteristics, and Glass breadks easily, and the application of luminescent device has been caused to impact.Adopt the OLED device of flexible material as substrate, than the OLED of glass substrate, there is more frivolous, more impact-resistant advantage.And the preparation of flexible OLED can adopt the volume to volume mode to produce, thereby reduces manufacturing cost significantly.Flexible demonstration substrate mainly contains ultra-thin glass, thin polymer film, sheet metal etc. at present.
While usually adopting thin polymer film as substrate, the anode of making on its surface, be to cover the layer of transparent conductive film as ITO by sputtering technology, the materials such as IZO, however also there are many problems that is difficult to overcome in these conductive films in the application of flexible OLED.For example, in preparing the process of ito thin film, various elements are as indium (In), and the doping ratio of tin (Sn) forms wayward, causes the pattern of ito thin film, and charge carrier and transmission performance are difficult to control.Secondly, on flexible substrate during conductive film such as preparation ITO etc., usually adopt the low temperature sputtering technology, prepared conductive film sheet resistance is high, the adhesion of film and substrate is not strong, make flexible OLED that the situation that conductive film comes off from substrate easily occur in the process of alternating bending, affect the stability of photoluminescence of OLED light-emitting device.
Given this, many researchers have developed conducting polymer poly-(3,4-dioxoethyl thiophene)/poly-(p styrene sulfonic acid) (gathers (3,4-dioxoethyl thiophene) mutually adulterate and mix composition with poly-(p styrene sulfonic acid), write a Chinese character in simplified form PEDOT:PSS, the mass ratio of PSS and PEDOT is generally 1:20) as novel conductive film, this material can be as the anode substitute of OLED light-emitting device, its available printing, spin coating, printing waits the plain mode film forming, and possesses the performance that deflection is arranged, and therefore can be prepared into flexible Organic Light Emitting Diode.
But, because the conductivity of PEDOT:PSS is poor, the sheet resistance of the anode of the flexible Organic Light Emitting Diode be made into is too high.
Summary of the invention
Based on this, the too high problem of sheet resistance for the anode of traditional flexible Organic Light Emitting Diode, be necessary to provide the anode of the flexible Organic Light Emitting Diode that a kind of sheet resistance is lower, and the flexible Organic Light Emitting Diode that adopts the anode of this flexibility Organic Light Emitting Diode.
In addition, also be necessary to provide the preparation method of the anode of the flexible Organic Light Emitting Diode that above-mentioned sheet resistance is lower.
A kind of anode of flexible Organic Light Emitting Diode comprises:
The conductive film of flexible base, board, PEDOT:PSS material and be arranged on described flexible base, board and described conductive film between the conductive metal wire layer;
Described conductive metal wire layer is formed by many conductive metal wires.
In one embodiment, the material of described flexible base, board is PETG, polyether sulfone, PEN, cyclic olefine copolymer or clear polyimides, and thickness is 0.1mm ~ 0.5mm.
In one embodiment, the diameter of described conductive metal wire is 10 μ m ~ 1000 μ m.
In one embodiment, described many conductive metal wires adopt palisade to arrange or netted arranging, and the distance between two adjacent described conductive metal wires is 0.2mm ~ 10mm.
In one embodiment, the material of described conductive metal wire is for being gold, silver, aluminium, copper or nickel.
In one embodiment, the thickness of described conductive film is 15 μ m ~ 1100 μ m.
A kind of preparation method of anode of flexible Organic Light Emitting Diode, comprise the steps:
Flexible base, board is provided;
The many conductive metal wires of arranging on described flexible base, board, form the conductive metal wire layer;
The conductive film of PEDOT:PSS material is set on the conductive metal wire layer.
In one embodiment, described many conductive metal wires form on described flexible base, board by vacuum coating technology.
In one embodiment, described conductive film forms on described conductive metal wire layer by the mode of printing, spin coating or roll marks.
A kind of flexible Organic Light Emitting Diode, comprise the following structure stacked gradually: anode, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and negative electrode;
Described anode comprises:
The conductive film of flexible base, board, PEDOT:PSS material and be arranged on described substrate and described conductive film between the conductive metal wire layer;
Described conductive metal wire layer is formed by many conductive metal wires.
The anode of this flexible Organic Light Emitting Diode arranges the conductive metal wire layer between substrate and conductive film, many conductive metal wires are covered parcel by conductive film, form the conductive network of an inside, reduced sheet resistance, with the anode of the flexible Organic Light Emitting Diode of the traditional conductive film that only adopts the PEDOT:PSS material, compare, the conductive capability of anode is improved.
The accompanying drawing explanation
The cutaway view of the anode of the flexible Organic Light Emitting Diode that Fig. 1 is an execution mode;
The front schematic view of the anode that Fig. 2 is flexible Organic Light Emitting Diode as shown in Figure 1;
The front schematic view of the anode of the flexible Organic Light Emitting Diode that Fig. 3 is another execution mode
The preparation flow figure of the anode that Fig. 4 is flexible Organic Light Emitting Diode as shown in Figure 1;
The structural representation of the flexible Organic Light Emitting Diode that Fig. 5 is an execution mode.
Embodiment
For the ease of understanding the present invention, below with reference to relevant drawings, the present invention is described more fully.Provided preferred embodiment of the present invention in accompanying drawing.But the present invention can realize in many different forms, is not limited to embodiment described herein.On the contrary, provide the purpose of these embodiment be make the understanding of disclosure of the present invention more comprehensively thorough.
The anode of the flexible Organic Light Emitting Diode of an execution mode as depicted in figs. 1 and 2 comprises: flexible base, board 10, conductive metal wire layer 20 and conductive film 30.
The material that flexible base, board 10 materials select visible light transmissivity to be greater than 80% can be PETG (PET), polyether sulfone (PES), PEN (PEN), cyclic olefine copolymer (COC) or clear polyimides (PI).
The thickness of flexible base, board 10 can be 0.1mm ~ 0.5mm.
The material of conductive film 30 is for gathering (3,4-dioxoethyl thiophene)/poly-(p styrene sulfonic acid) (PEDOT:PSS).In PEDOT:PSS, the mass ratio of PSS and PEDOT can be 1:20.
The thickness of conductive film 30 can be 15 μ m ~ 1100 μ m.
Conductive metal wire layer 20 is arranged between flexible base, board 10 and conductive film 30.
Conductive metal wire layer 20 is that 10 μ m ~ many conductive metal wires of 1000 μ m are arranged on flexible base, board 10 and form by diameter.The conducting metal linear diameter is 10 μ m ~ 1000 μ m, thereby makes it to be covered parcel by conductive film 30, forms the conductive network of an inside, has reduced the sheet resistance of anode.
Distance between two adjacent conductive metal wires is 0.2mm ~ 10mm.
Conductive metal wire layer 20 can evenly be arranged and form by many conductive metal wires, also can non-homogeneously arrange, as long as can guarantee that the distance between two adjacent conductive metal wires is 0.2mm ~ 10mm.
In conjunction with Fig. 2, in present embodiment, many conductive metal wires adopt netted arranging.
In conjunction with Fig. 3, in other execution mode, many conductive metal wires also can adopt palisade to arrange.
The material of conductive metal wire can be for being gold, silver, aluminium, copper or nickel.
The anode of this flexible Organic Light Emitting Diode arranges conductive metal wire layer 20 between the conductive film 30 of substrate 10 and PEDOT:PSS material, conductive metal wire is covered parcel by conductive film 30, form the conductive network of an inside, reduced sheet resistance, with the anode of the flexible Organic Light Emitting Diode of the traditional conductive film that only adopts the PEDOT:PSS material, compare, the conductive capability of anode is improved.
The preparation method of the anode of above-mentioned flexible Organic Light Emitting Diode as shown in Figure 4, comprise the steps:
S10, provide flexible base, board 10.
The material that flexible base, board 10 materials select visible light transmissivity to be greater than 80% can be PETG, polyether sulfone, PEN, cyclic olefine copolymer or clear polyimides.
The thickness of flexible base, board 10 can be 0.1mm ~ 0.5mm.
The many conductive metal wires of arranging on S20, the flexible base, board 10 that obtains at S10, form the conductive metal wire layer.
Many conductive metal wires can form by vacuum coating technology on flexible base, board 10, can use hot evaporation coating technique or sputtering technology.
The diameter of conductive metal wire can be 10 μ m ~ 1000 μ m, and the distance between two adjacent conductive metal wires is 0.2mm ~ 10mm.
Conductive metal wire layer 20 can evenly be arranged and form by conductive metal wire, also can non-homogeneously arrange, as long as can guarantee that the distance between two adjacent conductive metal wires is 0.2mm ~ 10mm.
In conjunction with Fig. 2, in present embodiment, many conductive metal wires adopt netted arranging.
In conjunction with Fig. 3, in other execution mode, many conductive metal wires also can adopt palisade to arrange.
The material of conductive metal wire can be for being gold, silver, aluminium, copper or nickel.
S30, the conductive film 30 of PEDOT:PSS material is set on conductive metal wire layer 20.
The material of conductive film 30 is for gathering (3,4-dioxoethyl thiophene)/poly-(p styrene sulfonic acid) (PEDOT:PSS).In PEDOT:PSS, the mass ratio of PSS and PEDOT can be 1:20.
The thickness of conductive film 30 can be 15 μ m ~ 1100 μ m.
The preparation method of the anode of this flexible Organic Light Emitting Diode is simple, the anode conducting performance of the flexible Organic Light Emitting Diode prepared is good, transmitance is high, the flexural property excellence, and because possessing good hole, PEDOT:PSS itself injects effect, therefore the flexible organic electro-luminescence diode prepared on this basis, without preparing hole injection layer, be conducive to apply.
The flexible Organic Light Emitting Diode of an execution mode as shown in Figure 5 comprises the following structure stacked gradually: anode 100, hole transmission layer 200, luminescent layer 300, electron transfer layer 400, electron injecting layer 500 and negative electrode 600.
The anode that anode 100 is flexible Organic Light Emitting Diode as depicted in figs. 1 and 2 comprises: flexible base, board 10, conductive metal wire layer 20 and conductive film 30.
The anode 100 of this flexible Organic Light Emitting Diode arranges conductive metal wire layer 20 between the conductive film 30 of substrate 10 and PEDOT:PSS material, conductive metal wire is covered parcel by conductive film 30, form the conductive network of an inside, reduced sheet resistance, with the anode of the flexible Organic Light Emitting Diode of the traditional conductive film that only adopts the PEDOT:PSS material, compare, the conductive capability of anode 100 is improved, thereby has improved the luminous efficiency of flexible Organic Light Emitting Diode.
This flexible Organic Light Emitting Diode in the preparation, only need to first prepare anode 100 according to above-mentioned method, and then evaporation hole transmission layer 200, luminescent layer 300, electron transfer layer 400, electron injecting layer 500 and negative electrode 600 get final product successively.
Effect is injected in the hole that the flexible organic electro-luminescence diode obtained prepared on the basis of anode 100 is good because PEDOT:PSS itself possesses, and therefore without preparing hole injection layer, is conducive to apply.
It is below the specific embodiment part.Wherein, the material of conductive film is the PEDOT:PSS that mass ratio PSS and PEDOT are 1:20.
Embodiment 1
The flexible base, board of PET material is provided, and thickness is 0.5mm.
Forming the conductive metal wire layer by hot evaporation coating technique on the flexible base, board obtained.
The Au metal wire that the conductive metal wire layer is 10 μ m by diameter adopts netted being arranged on flexible base, board to form, and the distance between two adjacent conductive metal wires is 0.2mm.
Form the conductive film of the PEDOT:PSS material that thickness is 15 μ m at the conductive metal wire layer by the mode of spin coating, obtain the anode of flexible Organic Light Emitting Diode.
The conductive metal wire of the anode of the flexible Organic Light Emitting Diode obtained is like this covered parcel by conductive film, forms the conductive network of an inside, has reduced sheet resistance.
Embodiment 2
The flexible base, board of PES material is provided, and thickness is 0.2mm.
Form the conductive metal wire layer by hot evaporation coating technique on the flexible base, board obtained.
The Ag metal wire that the conductive metal wire layer is 50 μ m by diameter adopts netted being arranged on flexible base, board to form, and the distance between two adjacent conductive metal wires is 0.5mm.
Form the conductive film of the PEDOT:PSS material that thickness is 60 μ m at the conductive metal wire layer by the mode of printing, obtain the anode of flexible Organic Light Emitting Diode.
Embodiment 3
The flexible base, board of PEN material is provided, and thickness is 0.2mm.
Forming the conductive metal wire layer by sputtering technology on the flexible base, board obtained.
The Cu metal wire that the conductive metal wire layer is 100 μ m by diameter adopts netted being arranged on flexible base, board to form, and the distance between two adjacent conductive metal wires is 1mm.
Form the conductive film of the PEDOT:PSS material that thickness is 150 μ m at the conductive metal wire layer by the mode of roll marks, obtain the anode of flexible Organic Light Emitting Diode.
Embodiment 4
The flexible base, board of PI material is provided, and thickness is 0.18mm.
Form the conductive metal wire layer by hot evaporation coating technique on the flexible base, board obtained.
The Al metal wire that the conductive metal wire layer is 500 μ m by diameter adopts netted being arranged on flexible base, board to form, and the distance between two adjacent conductive metal wires is 5mm.
Form the conductive film of the PEDOT:PSS material that thickness is 600 μ m at the conductive metal wire layer by the mode of printing, obtain the anode of flexible Organic Light Emitting Diode.
Embodiment 5
The flexible base, board of COC material is provided, and thickness is 0.1mm.
Forming the conductive metal wire layer by sputtering technology on the flexible base, board obtained.
The Ni metal wire that the conductive metal wire layer is 1000 μ m by diameter adopts netted being arranged on flexible base, board to form, and the distance between two adjacent conductive metal wires is 10mm.
Form the conductive film of the PEDOT:PSS material that thickness is 1100 μ m at the conductive metal wire layer by the mode of printing, obtain the anode of flexible Organic Light Emitting Diode.
Comparative Examples
The flexible base, board of PES material is provided, and thickness is 0.2mm.
Form the conductive film of the PEDOT:PSS material that thickness is 50 μ m by the mode of printing on the flexible base, board obtained, obtain the anode of flexible Organic Light Emitting Diode.
The anode of the flexible Organic Light Emitting Diode that embodiment 1 ~ 5 and Comparative Examples make is done the test of transmitance and sheet resistance, and test result is as shown in the table.
| Transmitance | Square resistance Ω/ | |
| Embodiment 1 | 81.9 | 55 |
| Embodiment 2 | 81.2 | 69 |
| Embodiment 3 | 80.9 | 67 |
| Embodiment 4 | 78.5 | 104 |
| Embodiment 5 | 75.9 | 98 |
| Comparative Examples 1 | 83.2 | 302 |
Meter reading can draw, the anode of the flexible Organic Light Emitting Diode that embodiment 1 ~ 5 makes has good conductivity, the advantage that light penetration is high, although it is slightly low that the anode of the flexible Organic Light Emitting Diode made with Comparative Examples is compared transmitance, but the efficient injection of high anode conducting performance guarantee charge carrier, be conducive to the raising of organic electroluminescent diode luminous efficiency, can obtain electroluminescence effect preferably.
The above embodiment has only expressed one or more execution modes of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. the anode of a flexible Organic Light Emitting Diode, is characterized in that, comprising:
The conductive film of flexible base, board, PEDOT:PSS material and be arranged on described flexible base, board and described conductive film between the conductive metal wire layer;
Described conductive metal wire layer is formed by many conductive metal wires.
2. the anode of flexible Organic Light Emitting Diode according to claim 1, it is characterized in that, the material of described flexible base, board is PETG, polyether sulfone, PEN, cyclic olefine copolymer or clear polyimides, and thickness is 0.1mm ~ 0.5mm.
3. the anode of flexible Organic Light Emitting Diode according to claim 1, is characterized in that, the diameter of described conductive metal wire is 10 μ m ~ 1000 μ m.
4. the anode of flexible Organic Light Emitting Diode according to claim 1, is characterized in that, described many conductive metal wires adopt palisade to arrange or netted arranging, and the distance between two adjacent described conductive metal wires is 0.2mm ~ 10mm.
5. the anode of flexible Organic Light Emitting Diode according to claim 1, is characterized in that, the material of described conductive metal wire is for being gold, silver, aluminium, copper or nickel.
6. the anode of flexible Organic Light Emitting Diode according to claim 1, is characterized in that, the thickness of described conductive film is 15 μ m ~ 1100 μ m.
7. the preparation method of the anode of a flexible Organic Light Emitting Diode, is characterized in that, comprises the steps:
Flexible base, board is provided;
The many conductive metal wires of arranging on described flexible base, board, form the conductive metal wire layer;
The conductive film of PEDOT:PSS material is set on the conductive metal wire layer.
8. the preparation method of the anode of flexible Organic Light Emitting Diode according to claim 7, is characterized in that, described many conductive metal wires form on described flexible base, board by vacuum coating technology.
9. the preparation method of the anode of flexible Organic Light Emitting Diode according to claim 7, is characterized in that, described conductive film forms on described conductive metal wire layer by the mode of printing, spin coating or roll marks.
10. a flexible Organic Light Emitting Diode, is characterized in that, comprises the following structure stacked gradually: anode, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and negative electrode;
Described anode comprises:
The conductive film of flexible base, board, PEDOT:PSS material and be arranged on described substrate and described conductive film between the conductive metal wire layer;
Described conductive metal wire layer is formed by many conductive metal wires.
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| CN105140411A (en) * | 2015-08-17 | 2015-12-09 | Tcl集团股份有限公司 | Indium tin oxide (ITO)-free quantum light emitting diode (QLED) and fabrication method thereof |
| CN105161632A (en) * | 2015-08-03 | 2015-12-16 | 深圳市华星光电技术有限公司 | Organic electroluminescent device structure and preparation method thereof |
| WO2016082338A1 (en) * | 2014-11-24 | 2016-06-02 | 深圳市华星光电技术有限公司 | Conductive flexible substrate, manufacturing method for conductive flexible substrate, oled display device and manufacturing method for oled display device |
| CN106848075A (en) * | 2016-12-31 | 2017-06-13 | 固安翌光科技有限公司 | OLED, OLED screen body and the preparation method that can freely cut |
| CN106876600A (en) * | 2015-12-11 | 2017-06-20 | 昆山工研院新型平板显示技术中心有限公司 | Transparency electrode, OLED and transparency electrode preparation method |
| US10062856B1 (en) | 2017-02-28 | 2018-08-28 | Shanghai Tianma Micro-electronics Co., Ltd. | Flexible display substrate and flexible display apparatus |
| CN108711568A (en) * | 2018-07-03 | 2018-10-26 | 天津大学 | The input of flexibility two based on PET substrate and logic gates |
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- 2012-05-24 CN CN2012101641776A patent/CN103427041A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2016082338A1 (en) * | 2014-11-24 | 2016-06-02 | 深圳市华星光电技术有限公司 | Conductive flexible substrate, manufacturing method for conductive flexible substrate, oled display device and manufacturing method for oled display device |
| CN105161632A (en) * | 2015-08-03 | 2015-12-16 | 深圳市华星光电技术有限公司 | Organic electroluminescent device structure and preparation method thereof |
| WO2017020361A1 (en) * | 2015-08-03 | 2017-02-09 | 深圳市华星光电技术有限公司 | Organic electroluminescent device structure and fabrication method thereof |
| CN105140411A (en) * | 2015-08-17 | 2015-12-09 | Tcl集团股份有限公司 | Indium tin oxide (ITO)-free quantum light emitting diode (QLED) and fabrication method thereof |
| CN105140411B (en) * | 2015-08-17 | 2018-11-06 | Tcl集团股份有限公司 | QLED and preparation method thereof without ITO |
| CN106876600A (en) * | 2015-12-11 | 2017-06-20 | 昆山工研院新型平板显示技术中心有限公司 | Transparency electrode, OLED and transparency electrode preparation method |
| CN106848075A (en) * | 2016-12-31 | 2017-06-13 | 固安翌光科技有限公司 | OLED, OLED screen body and the preparation method that can freely cut |
| US10062856B1 (en) | 2017-02-28 | 2018-08-28 | Shanghai Tianma Micro-electronics Co., Ltd. | Flexible display substrate and flexible display apparatus |
| CN108711568A (en) * | 2018-07-03 | 2018-10-26 | 天津大学 | The input of flexibility two based on PET substrate and logic gates |
| CN108711568B (en) * | 2018-07-03 | 2023-08-22 | 天津大学 | Flexible two-input AND logic gate circuit based on PET substrate |
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