CN103424933A - Liquid crystal element and liquid crystal display - Google Patents
Liquid crystal element and liquid crystal display Download PDFInfo
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Abstract
本发明提供液晶元件、液晶显示装置,提高利用了两种取向状态间的转变的液晶元件和使用了该液晶元件的液晶显示装置在高温环境下的记忆性。液晶元件包括:相对配置的第1基板和第2基板,该第1基板和第2基板各自的一面被实施了取向处理;设置在第1基板的一面与第2基板的一面之间的液晶层;以及设置在第1基板的一面与第2基板的一面之间的多个柱状间隔物。第1基板和第2基板的取向处理的方向被设定为产生液晶层的液晶分子在第1方向上扭曲的第1取向状态,并且,各自在与液晶层的界面处赋予给该液晶层的液晶分子的预倾角为20°以上。液晶层含有手性材料,该手性材料具有如下性质:产生液晶分子在与第1方向相反的第2方向上扭曲的第2取向状态。
The invention provides a liquid crystal element and a liquid crystal display device, and improves the memory performance of the liquid crystal element utilizing the transition between two alignment states and the liquid crystal display device using the liquid crystal element in a high-temperature environment. The liquid crystal element includes: a first substrate and a second substrate arranged oppositely, and the respective surfaces of the first substrate and the second substrate have been subjected to orientation treatment; a liquid crystal layer disposed between one surface of the first substrate and one surface of the second substrate ; and a plurality of columnar spacers disposed between one side of the first substrate and one side of the second substrate. The direction of the alignment treatment of the first substrate and the second substrate is set to produce the first alignment state in which the liquid crystal molecules of the liquid crystal layer are twisted in the first direction, and each of them imparts the liquid crystal layer at the interface with the liquid crystal layer. The pretilt angle of the liquid crystal molecules is 20° or more. The liquid crystal layer contains a chiral material having a property of producing a second alignment state in which liquid crystal molecules are twisted in a second direction opposite to the first direction.
Description
技术领域technical field
本发明涉及液晶元件和液晶显示装置中的电光特性的改进技术。The present invention relates to a technology for improving electro-optic characteristics in liquid crystal elements and liquid crystal display devices.
背景技术Background technique
在日本特开2011-203547号公报(专利文献1)中公开有利用了两种取向状态间的转变的新颖的液晶显示元件(反向TN型液晶元件)。该现有例的液晶显示元件具有进行了取向处理的第1基板和第2基板、以及配置在它们之间进行扭曲取向的液晶层,在液晶层中包含有手性材料。并且,当设液晶层中不含有手性材料时液晶分子扭曲的旋转方向为第1旋转方向时,手性材料对液晶分子施加朝向与第1旋转方向相反的第2旋转方向的旋转性。另外,第1基板和第2基板以分别产生20°以上45°以下的预倾角的方式进行了取向处理。在第1基板和第2基板上设置有电极,所述电极能够在液晶层的层厚方向以及与其垂直的方向上分别产生电场。根据该结构,能够实现具有可维持显示状态的记忆性,且得到了高对比度的显示品质优异的液晶显示元件。JP 2011-203547 A (Patent Document 1) discloses a novel liquid crystal display element (reverse TN type liquid crystal element) utilizing transition between two alignment states. The liquid crystal display element of this conventional example has a first substrate and a second substrate subjected to alignment treatment, and a liquid crystal layer arranged between them and subjected to twist alignment, and a chiral material is contained in the liquid crystal layer. Furthermore, when the rotation direction in which liquid crystal molecules are twisted when no chiral material is included in the liquid crystal layer is the first rotation direction, the chiral material imparts rotation to the liquid crystal molecules in a second rotation direction opposite to the first rotation direction. In addition, the first substrate and the second substrate were subjected to orientation treatment so as to generate pretilt angles of 20° to 45°, respectively. Electrodes capable of generating electric fields in the thickness direction of the liquid crystal layer and in a direction perpendicular thereto are provided on the first substrate and the second substrate. According to this configuration, it is possible to realize a liquid crystal display element having a memory capable of maintaining a display state, and obtaining a high-contrast liquid crystal display element with excellent display quality.
但是,在上述现有例的液晶显示元件中,虽然在室温下的记忆性高,但是当周边温度变高时(例如60℃以上),有时记忆性降低,一部分无法保持显示状态。因此,例如在车载用途、航空器用途、户外用途等周边温度的变化大的使用条件下,记忆性不充分。另外,在现有例的液晶显示元件中,由于在散布于基板间的间隙材料之间产生的向错线,有时导致在上述第2旋转方向上扭曲的展曲扭曲(splay twist)取向的区域中的透射率降低,在这方面存在改进的余地。而且,在上述第1旋转方向上扭曲的反向扭曲(reverse twist)取向的区域与展曲扭曲取向的区域之间的边界线反映了向错线的形状,从而有时,边界线成为凹凸状,导致显示质量降低,在这方面也存在改进的余地。However, although the liquid crystal display elements of the above-mentioned conventional examples have high memory at room temperature, when the ambient temperature becomes high (for example, 60° C. or higher), the memory may decrease, and some display states may not be maintained. Therefore, for example, the memory performance is insufficient under usage conditions such as in-vehicle use, aircraft use, and outdoor use where the ambient temperature changes greatly. In addition, in the liquid crystal display element of the conventional example, the disclination lines generated between the gap materials scattered between the substrates sometimes result in a region of splay twist orientation twisted in the above-mentioned second rotation direction. The transmittance in is reduced, and there is room for improvement in this regard. Furthermore, the boundary line between the reverse twist (reverse twist) oriented region twisted in the above-mentioned first rotation direction and the splay twist oriented region reflects the shape of the disclination line, so that the boundary line may become uneven, Resulting in lower display quality, there is also room for improvement in this regard.
【专利文献1】日本特开2011-203547号公报[Patent Document 1] Japanese Patent Laid-Open No. 2011-203547
发明内容Contents of the invention
本发明的具体方式的目的之一在于,提供能够提高利用了两种取向状态间的转变的液晶元件和使用了该液晶元件的液晶显示装置在高温环境下的记忆性的技术。One of the objects of a specific embodiment of the present invention is to provide a technology capable of improving the memory properties of a liquid crystal element utilizing transition between two alignment states and a liquid crystal display device using the liquid crystal element in a high-temperature environment.
本发明的具体方式的目的之一在于,提供能够防止由于利用了两种取向状态间的转变的液晶元件和使用了该液晶元件的液晶显示装置中的向错线引起的显示质量的降低的技术。One of the objects of a specific aspect of the present invention is to provide a technology capable of preventing degradation of display quality due to disclination lines in a liquid crystal element utilizing transition between two alignment states and a liquid crystal display device using the liquid crystal element. .
本发明的一个方式的液晶元件包括:(a)相对配置的第1基板和第2基板,该第1基板和第2基板各自的一面被实施了取向处理;(b)液晶层,其设置在第1基板的一面与第2基板的一面之间;以及(c)多个柱状间隔物,其设置在第1基板的一面与第2基板的一面之间,(d)第1基板和第2基板的取向处理的方向被设定为,产生液晶层的液晶分子在第1方向上扭曲的第1取向状态,并且,所述第1基板和第2基板在分别与液晶层的界面处赋予给该液晶层的液晶分子的预倾角为20°以上,(e)液晶层含有手性材料,该手性材料具有如下性质:产生液晶分子在与第1方向相反的第2方向上扭曲的第2取向状态。A liquid crystal element according to one aspect of the present invention includes: (a) a first substrate and a second substrate disposed opposite to each other, and the respective surfaces of the first substrate and the second substrate are subjected to alignment treatment; (b) a liquid crystal layer provided on between one surface of the first substrate and one surface of the second substrate; and (c) a plurality of columnar spacers disposed between one surface of the first substrate and one surface of the second substrate, (d) the first substrate and the second substrate The direction of the alignment treatment of the substrates is set so as to generate a first alignment state in which the liquid crystal molecules of the liquid crystal layer are twisted in the first direction, and the first substrate and the second substrate are respectively provided at interfaces with the liquid crystal layer. The liquid crystal molecules of the liquid crystal layer have a pretilt angle of 20° or more, and (e) the liquid crystal layer contains a chiral material having a property of generating a second direction in which the liquid crystal molecules are twisted in a second direction opposite to the first direction. orientation status.
在上述液晶元件中,构成为使用多个柱状间隔物来保持第1基板和第2基板的间隙,由此使得配置在第1取向状态的区域与第2取向状态的区域的边界附近的柱状间隔物像隔离壁一样发挥作用,能够产生两种取向状态不连续的状态。由此,能够双向地阻断取向状态的转变,能够提高记忆性,因此,即使在高温状态下,也能够稳定地保持各个取向状态。因此,还可以应用于车载用途、航空器用途、户外用途等要求高可靠性的用途。另外,与将球状间隔物用作间隙材料的情况相比,消除了间隙材料间的向错线,因此能够避免由向错线的形状引起的显示质量的降低。而且,因向错线引起的弱散射消失,因此第2取向状态(展曲扭曲状态)的区域中的透射率增加,第1取向状态和第2取向状态的各区域间上的对比度提高。In the above-mentioned liquid crystal element, the gap between the first substrate and the second substrate is maintained by using a plurality of columnar spacers, so that the columnar space arranged near the boundary between the region of the first alignment state and the region of the second alignment state The object acts like a partition wall, capable of producing a state in which the two orientation states are discontinuous. Thereby, the transition of the orientation state can be blocked bidirectionally, and the memory property can be improved, so that each orientation state can be stably maintained even in a high-temperature state. Therefore, it can also be applied to applications requiring high reliability, such as in-vehicle use, aircraft use, and outdoor use. In addition, compared with the case where spherical spacers are used as the gap material, the disclination lines between the gap materials are eliminated, so it is possible to avoid a decrease in display quality due to the shape of the disclination lines. Furthermore, the weak scattering due to the disclination line disappears, so the transmittance in the region of the second orientation state (splay-twist state) increases, and the contrast between the regions of the first orientation state and the second orientation state improves.
在上述液晶元件中,多个柱状间隔物例如分别在俯视时具有线状或点状的外形。In the above-mentioned liquid crystal element, each of the plurality of columnar spacers has a linear or dot-like outer shape in plan view, for example.
上述液晶元件还包括电压施加单元,该电压施加单元为了产生电场而向所述液晶层施加电压,通过所述电压施加单元在与所述第1基板和所述第2基板各自的一面大致垂直的方向上产生电场,由此使得所述液晶层向所述第1取向状态转变,通过在与所述第1基板和所述第2基板各自的一面大致平行的方向上产生电场,由此使得所述液晶层向所述第2取向状态转变。The above-mentioned liquid crystal element further includes a voltage applying unit for applying a voltage to the liquid crystal layer in order to generate an electric field. An electric field is generated in a direction, thereby causing the liquid crystal layer to transition to the first alignment state, and an electric field is generated in a direction substantially parallel to the respective surfaces of the first substrate and the second substrate, thereby making the liquid crystal layer The liquid crystal layer transitions to the second alignment state.
本发明的一个方式的液晶显示装置具有多个像素部,该多个像素部分别使用上述本发明的液晶元件而构成。A liquid crystal display device according to one aspect of the present invention has a plurality of pixel units each configured using the above-mentioned liquid crystal element of the present invention.
根据上述结构,能够得到如下所述的液晶显示装置:通过利用液晶元件的两种取向状态的双稳定性(记忆性),从而除了显示改写时以外基本上不需要电力,并且在高温下也不会降低记忆性,显示质量也十分优异。According to the above-mentioned structure, it is possible to obtain a liquid crystal display device as follows: By using the bistability (memory) of the two alignment states of the liquid crystal element, it basically does not require electric power except when the display is rewritten, and it does not require much power at high temperatures. Will reduce the memory, display quality is also very good.
附图说明Description of drawings
图1是示意地示出反向TN型液晶元件的动作的示意图。FIG. 1 is a schematic diagram schematically showing the operation of an inverse TN type liquid crystal element.
图2是用于说明从反向扭曲状态向展曲扭曲状态转变时的液晶层的取向状态与电场方向的关系的概念图。FIG. 2 is a conceptual diagram for explaining the relationship between the alignment state of the liquid crystal layer and the direction of the electric field at the time of transition from the reverse twisted state to the spread twisted state.
图3是示出反向TN型液晶元件的结构例的剖视图。3 is a cross-sectional view showing a structural example of an inverse TN type liquid crystal element.
图4是示出柱状间隔物的俯视时的形状的示意图。FIG. 4 is a schematic diagram showing a planar shape of a columnar spacer.
图5是说明使用各电极对液晶层施加的电场的示意性剖视图。5 is a schematic cross-sectional view illustrating an electric field applied to a liquid crystal layer using electrodes.
图6是示意地示出液晶显示装置的结构例的图。FIG. 6 is a diagram schematically showing a configuration example of a liquid crystal display device.
图7是示出实施例1的液晶元件的显微镜观察像的图。FIG. 7 is a view showing a microscope observation image of the liquid crystal element of Example 1. FIG.
图8是示出实施例2的液晶元件的显微镜观察像的图。FIG. 8 is a view showing a microscope observation image of a liquid crystal element of Example 2. FIG.
标号说明Label description
1:上侧基板1: Upper substrate
2:下侧基板2: Lower side substrate
3:液晶层3: Liquid crystal layer
51:第1基板51: 1st substrate
52:第1电极52: 1st electrode
53、57:取向膜53, 57: Alignment film
54:第2基板54: 2nd substrate
55:第2电极55: 2nd electrode
56:绝缘膜56: insulating film
58:第3电极58: 3rd electrode
59:第4电极59: 4th electrode
60:液晶层60: liquid crystal layer
61:柱状间隔物61: columnar spacer
71、72、73:驱动器71, 72, 73: Drivers
74:像素部74: Pixel Department
A1~An、B1~Bm、C1~Cn、D1~Dn:控制线A1~An, B1~Bm, C1~Cn, D1~Dn: control line
具体实施方式Detailed ways
以下,参照附图对本发明的实施方式进行说明。Hereinafter, embodiments of the present invention will be described with reference to the drawings.
图1是概略地示出反向TN(RTN)型液晶元件的动作的示意图。作为反向TN型液晶元件的基本结构,具有相对配置的上侧基板1和下侧基板2、以及设置在它们之间的液晶层3。对上侧基板1和下侧基板2各自的表面实施了摩擦处理等取向处理。上侧基板1与下侧基板2按照它们的取向处理方向(图中用箭头表示)以90°前后的角度相互交叉的方式,相对地配置。液晶层3是通过向上侧基板1与下侧基板2之间注入向列型液晶材料而形成的。在该液晶层3中使用了添加有手性材料的液晶材料,该手性材料产生如下作用:使液晶分子在其方位角方向中特定的方向(在图1的例子中为右旋转方向)上扭曲。关于这样的反向TN型液晶元件,通过手性材料的作用,在初始状态下液晶层3成为在进行展曲取向的同时进行扭曲的展曲扭曲状态。当针对该展曲扭曲状态的液晶层3,在其层厚方向上施加超过饱和电压的电压时,液晶分子转移到在左旋转方向上扭曲的反向扭曲状态(均匀扭曲状态)。在这样的反向扭曲状态的液晶层3中,主体(bulk)中的液晶分子是倾斜的,因此显现出降低液晶元件的驱动电压的效果。FIG. 1 is a schematic diagram schematically showing the operation of a reverse TN (RTN) type liquid crystal element. As a basic structure of an inverse TN type liquid crystal element, there are an upper substrate 1 and a
图2是用于说明从反向扭曲状态向展曲扭曲状态转变时的液晶层的取向状态与电场方向的关系的概念图。如图2(A)所示,针对相对于基板面处于水平方向的电场(Electric field),将电场的施加方向设定为,使其尽量不与反向扭曲状态下的液晶层的层厚方向的大致中央的液晶分子(图中为附有纹样的液晶分子)的长轴方向平行,而是成为垂直或接近垂直的状态。由此,液晶层的层厚方向的大致中央的液晶分子沿着电场方向重新进行取向,所以如图2(B)所示,液晶层的取向状态从反向扭曲状态转变至展曲扭曲状态。此外,当针对反向扭曲状态的液晶层,以与其层厚方向的大致中央的液晶分子的长轴方向平行或接近平行的状态施加了电场时,难以产生从反向扭曲状态向展曲扭曲状态的转变。这是因为,在液晶层的层厚方向的大致中央,几乎不会因电场而产生液晶分子的重新取向。根据以上情况,为了在反向TN型液晶元件中在两种取向状态之间自如地转变,需要产生与液晶层的层厚方向对应的电场(纵向电场)和与其垂直的方向的电场(横向电场),而且对于横向电场而言,需要成为与反向扭曲状态的液晶层的层厚方向的大致中央的液晶分子的长轴方向大致垂直或者接近于垂直的方向。关于用于自如地施加这些纵向电场与横向电场的元件构造,以下举出具体例子进行说明。FIG. 2 is a conceptual diagram for explaining the relationship between the alignment state of the liquid crystal layer and the direction of the electric field at the time of transition from the reverse twisted state to the spread twisted state. As shown in Figure 2(A), for the electric field in the horizontal direction relative to the substrate surface, the direction of application of the electric field is set so that it is as far as possible from the layer thickness direction of the liquid crystal layer in the reverse twisted state. The major axes of liquid crystal molecules in the approximate center of the liquid crystal molecules (the liquid crystal molecules with patterns in the figure) are parallel to each other, but become vertical or nearly vertical. As a result, the liquid crystal molecules in the substantially center of the liquid crystal layer in the layer thickness direction are re-aligned along the direction of the electric field, so as shown in FIG. In addition, when an electric field is applied to the liquid crystal layer in the reverse twisted state in a state parallel to or nearly parallel to the major axis direction of the liquid crystal molecules in the approximate center of the layer thickness direction, it is difficult to change from the reverse twisted state to the splay twisted state. change. This is because, at substantially the center of the liquid crystal layer in the layer thickness direction, reorientation of the liquid crystal molecules hardly occurs due to the electric field. According to the above situation, in order to switch freely between the two alignment states in the reverse TN type liquid crystal element, it is necessary to generate an electric field (longitudinal electric field) corresponding to the layer thickness direction of the liquid crystal layer and an electric field (lateral electric field) in a direction perpendicular to it. ), and for the lateral electric field, it is necessary to be substantially vertical or close to the vertical direction to the long axis direction of the liquid crystal molecules in the approximate center of the liquid crystal layer in the reverse twisted state in the layer thickness direction. The device structure for freely applying these vertical electric fields and horizontal electric fields will be described below with specific examples.
图3是示出反向TN型液晶元件的结构例的剖视图。图3所示的液晶元件具有在第1基板(上侧基板)51与第2基板(下侧基板)54之间夹有液晶层60的基本结构。以下,进一步详细地对液晶元件的构造进行说明。另外,关于对液晶层60的周围进行密封的密封材料等部件,省略图示和说明。3 is a cross-sectional view showing a structural example of an inverse TN type liquid crystal element. The liquid crystal element shown in FIG. 3 has a basic structure in which a
第1基板51和第2基板54分别是例如玻璃基板、塑料基板等透明基板。如图所示,第1基板51与第2基板54以彼此的一面相对的方式,设置了规定间隙(例如几μm)而贴合。另外,虽然省略了特别的图示,但是可以在任意一个基板上形成薄膜晶体管等切换元件。The
第1电极52设置在第1基板51的一面侧。另外,第2电极55设置在第2基板54的一面侧。第1电极52和第2电极55分别通过对例如氧化铟锡(ITO)等透明导电膜进行构图而构成。The
绝缘膜(绝缘层)56以覆盖第2电极55的方式设置在第2基板54上。该绝缘膜56例如是氧化硅膜、氮化硅膜、氮氧化硅膜或它们的层叠膜等无机绝缘膜、或者有机绝缘膜(例如丙烯酸类有机绝缘膜)。An insulating film (insulating layer) 56 is provided on the
第3电极58、第4电极59分别设置在第2基板54上的上述绝缘膜56上。本实施方式中的第3电极58和第4电极59分别是具有多个电极支的梳齿状电极,以彼此的电极支交替地排列的方式进行配置(参照后述的图4)。第3电极58和第4电极59分别通过对例如氧化铟锡(ITO)等透明导电膜进行构图而构成。关于第3电极58、第4电极59各自的电极支,例如宽度为20μm,并将电极间隔设定为20μm而进行配置。The
取向膜53以覆盖第1电极52的方式设置在第1基板51的一面侧。另外,取向膜57以覆盖第3电极58和第4电极59的方式设置在第2基板54的一面侧。对各取向膜53、57实施了规定的取向处理(例如摩擦处理)。The
液晶层60设置在第1基板51与第2基板54彼此之间。构成液晶层60的液晶材料的介电常数各向异性Δε为正(Δε>0)。在该液晶材料中添加有用于使液晶分子成为扭曲取向的手性材料。The
柱状间隔物61配置在第1基板51与第2基板54之间,将两者间的间隙保持为规定的单元厚度(例如几μm)。这些柱状间隔物61例如使用感光性树脂材料而形成。在本实施方式中,各柱状间隔物61预先形成在第1基板51上。The
图4(A)和图4(B)是分别示出柱状间隔物的俯视时的形状的示意图。例如图4(A)所示,各柱状间隔物61分别形成为在第1方向上延伸的线状(在图示的例子中是长条的矩形状),并且在第2方向上等间隔地配置。另外,柱状间隔物61的配置间隔也可以不是等间隔。另外,例如图4(B)所示,各柱状间隔物61可以分别形成为点状(在图示的例子中为正方形状),配置成等间隔的矩阵状。另外,各柱状间隔物61的形状不限于正方形状,配置间隔也可以不是等间隔。即使使用任意一种形状的柱状间隔物61,从使单元厚度更稳定的角度出发,都希望用于显示等的光调制的区域内的各柱状间隔物61的俯视时的合计面积占区域总面积的3.8%以上。FIG. 4(A) and FIG. 4(B) are schematic diagrams each showing the shape of the columnar spacer in plan view. For example, as shown in FIG. 4(A), each
图5是说明使用各电极对液晶层施加的电场的示意性剖视图。图5(A)是俯视地示出第1~第4电极的配置的示意图。图5(B)~图5(D)是剖视地示出第1~第4电极的配置的示意图。第1电极52和第2电极55彼此相对配置,在两者重叠的区域内,配置有第3电极58和第4电极59。另外,第3电极58的多个电极支和第4电极59的多个电极支是以重复地一一交替的方式配置的。5 is a schematic cross-sectional view illustrating an electric field applied to a liquid crystal layer using electrodes. FIG. 5(A) is a schematic diagram showing the arrangement of the first to fourth electrodes in plan view. 5(B) to 5(D) are schematic diagrams showing the arrangement of the first to fourth electrodes in cross-section. The
如图5(B)所示,通过在第1电极52与第2电极55之间施加电压,能够在两电极之间产生电场。如图所示,此时的电场是沿着第1基板51和第2基板54的厚度方向(单元厚度方向)的电场、即“纵向电场”。As shown in FIG. 5(B) , by applying a voltage between the
另外,如图5(C)所示,通过在第3电极58与第4电极59之间施加电压,能够在两电极之间产生电场。如图所示,此时的电场是与第1基板51和第2基板54各自的一面大致平行的方向的电场、即“横向电场”。之后,有时也将使用这样的电场的模式称为“IPS模式”。In addition, as shown in FIG. 5(C) , by applying a voltage between the
另外,如图5(D)所示,通过在隔着绝缘膜56相对配置的第2电极55与第3电极58和第4电极59之间施加电压,能够在两电极之间产生电场。如图所示,此时的电场是沿着与第1基板51和第2基板54各自的一面大致平行的方向的电场、即“横向电场”。以后,有时也将使用这样的电场的模式称为“FFS模式”。In addition, as shown in FIG. 5(D) , by applying a voltage between the
在本实施方式的液晶元件中,在初始状态下,液晶层60的液晶分子取向为展曲扭曲状态。相对于此,当如上所述使用第1电极52和第2电极55产生纵向电场时,液晶层60的液晶分子的取向状态向反向扭曲状态转变。之后,当使用第3电极58和第4电极59产生横向电场时(IPS模式),液晶层60的取向状态向展曲扭曲状态转变。另外,即使在使用第2电极55、第3电极58、第4电极59产生横向电场时(FFS模式),液晶层60的取向状态也是同样地从反向扭曲状态向展曲扭曲状态转变。在与IPS模式的比较中,存在FFS模式能够使得液晶层60的取向状态更加均匀地转变的倾向。这是因为在第3电极58、第4电极59的各电极上也施加了横向电场。因此,从开口率(透射率、对比度)方面考虑,可以说FFS模式更合适。In the liquid crystal element of this embodiment, in the initial state, the liquid crystal molecules of the
关于液晶层60的取向状态能够在展曲扭曲状态与反向扭曲状态之间切换的原因,如下地进行考察。在展曲扭曲状态中,液晶层60的层厚方向的大致中央的液晶分子大致水平地进行取向,而在通过纵向电场成为反向扭曲状态之后,层厚方向的大致中央的液晶分子向垂直方向倾斜。之后,通过IPS模式或FFS模式的横向电场,对反向扭曲状态中的液晶层60的层厚方向的大致中央的液晶分子施加横向电场,展曲扭曲状态中的液晶层60的该大致中央的液晶分子朝向应有的指向矢方向,因此再次向作为初始状态的展曲扭曲状态转变。由此可知,灵活运用纵向电场和横向电场,能够对展曲扭曲状态和反向扭曲状态进行切换。The reason why the alignment state of the
接着,对液晶元件的制造方法的一例进行详细说明。Next, an example of the manufacturing method of a liquid crystal element is demonstrated in detail.
通过对带有ITO膜的玻璃基板的ITO膜进行构图,来制作具有第1电极52的第1基板51。此处,可以通过一般的光刻技术来进行ITO膜的构图。作为ITO蚀刻方法,使用湿蚀刻(氯化铁)。在这里的第1电极52的形状图案中,在引出电极部分和相当于显示像素的部分中保留有ITO膜。同样地,通过对带有ITO膜的玻璃基板的ITO膜进行构图,来制作具有第2电极55的第2基板54。The
在第1基板51的第1电极52上形成柱状间隔物61。例如,通过旋涂器在第1基板51的一面上涂布透明的负性感光性树脂(例如使旋涂器旋转30秒钟),并进行预烘焙(例如100℃、120秒钟)。另外,通过调整旋涂器的转速,能够在膜厚0.5μm~5μm左右的范围内均匀地进行成膜。也可以使用狭缝涂布装置来代替旋涂器的涂布。此时,能够均匀地成膜到膜厚10μm左右。在成膜之后,隔着具有与期望形状的柱状间隔物61对应的曝光图案的光掩模,利用以高压水银灯为光源的接触式曝光机对感光性树脂膜照射紫外线。曝光条件例如设为以照度5.79mW/cm2照射35秒钟(200mJ/cm2)。之后,浸渍到浓度1%的氢氧化四甲铵水溶液中,由此使得感光性树脂显影,并用纯水进行冲洗,在基板干燥之后,在无尘烘烤箱内以220℃进行30分钟的主烘焙。由此在第1基板51的一面上形成多个柱状间隔物61。
在第2基板54的第2电极55上形成绝缘膜56。此时,为了不在引出电极部分处形成绝缘膜56,需要采取措施。作为其方法,可以列举出如下方法:预先在引出电极部分处形成抗蚀剂,在形成绝缘膜56之后进行剥离的方法;在通过金属掩模等遮蔽了引出电极部分的状态下通过溅射法等来形成绝缘膜56的方法等。另外,作为绝缘膜56,可以列举出有机绝缘膜、或者氧化硅膜或氮化硅膜等无机绝缘膜以及它们的组合等。这里,将丙烯酸系有机绝缘膜与氧化硅膜(SiO2膜)的层叠膜用作绝缘膜56。An insulating
在引出电极部分(端子部分)处粘贴耐热性薄膜(聚酰亚胺胶带),在该状态下旋涂有机绝缘膜的材料液。例如,在以2000rpm旋转30秒钟的条件下,得到1μm的膜厚。在无尘烘烤箱中对其进行烘焙(例如,220℃、1小时)。在粘贴有耐热性薄膜的状态下通过溅射法(交流放电)形成SiO2膜。例如,将基板加热到80℃,形成此处,当剥离耐热性薄膜时,能够将有机绝缘膜、SiO2膜一起干净地剥离。之后,在无尘烘烤箱中进行烘烤(例如,220℃、1小时)。这是为了提高SiO2膜的绝缘性和透明性。虽然不是必须形成SiO2膜,但通过形成SiO2膜,能够提高其上形成的ITO膜的密接性和构图性,因此优选形成SiO2膜。并且,绝缘性也提高。另一方面,也可以考虑不形成有机绝缘膜而仅通过SiO2膜来获得绝缘性的方法,不过此时,由于SiO2膜容易成为多孔质,因此优选将膜厚确保为左右。另外,也可以成为与SiNx的层叠膜。另外,作为无机绝缘膜的形成方法,虽然叙述了溅射法,但是也可以使用真空蒸镀法、离子束法、CVD法(化学气相沉积法)等形成方法。A heat-resistant film (polyimide tape) is attached to the lead-out electrode part (terminal part), and the material liquid of the organic insulating film is spin-coated in this state. For example, under the condition of spinning at 2000 rpm for 30 seconds, a film thickness of 1 μm is obtained. Bake them in a dust-free oven (eg, 220 °C for 1 hour). A SiO2 film is formed by sputtering (AC discharge) with a heat-resistant film attached. For example, the substrate is heated to 80°C to form Here, when the heat-resistant thin film is peeled off, the organic insulating film and the SiO 2 film can be cleanly peeled off together. Thereafter, baking is performed in a dust-free oven (for example, 220° C. for 1 hour). This is to improve the insulation and transparency of the SiO2 film. Although it is not necessary to form the SiO 2 film, the adhesion and patterning of the ITO film formed thereon can be improved by forming the SiO 2 film, so the formation of the SiO 2 film is preferable. In addition, insulation is also improved. On the other hand, it is also conceivable to obtain insulation only by the SiO2 film without forming an organic insulating film . about. In addition, it may be a laminated film with SiNx. In addition, although the sputtering method was described as the method for forming the inorganic insulating film, a method such as a vacuum evaporation method, an ion beam method, and a CVD method (chemical vapor deposition method) may also be used.
接着,在绝缘膜56上形成第3电极58和第4电极59。具体地讲,首先在绝缘膜56上通过溅射法(交流放电)形成ITO膜。例如将其基板加热到100℃,在整个面上形成约左右的ITO膜。通过一般的光刻技术对该ITO膜进行构图。作为此时的光掩模,使用具有与上述的图5所示的梳齿状电极对应的遮光部分的光掩模。关于梳齿状电极,例如可以设电极支的宽度为20μm~30μm、电极间隔为20μm~200μm。另外,如果在上述引出电极部分处也没有图案,则也会通过蚀刻将下侧的ITO膜去除,因此使用在引出电极部分处也形成有图案的光掩模。Next, the
对如上所述制作的第1基板51和第2基板54进行清洗。具体地讲,首先进行水洗(刷洗或喷洗、纯水清洗),在去除了水分之后进行UV清洗,最后进行IR干燥。The
接着,在第1基板51、第2基板54上分别形成取向膜53、57。作为取向膜53、57,例如使用聚酰亚胺膜,该聚酰亚胺膜是降低了通常作为垂直取向膜使用的材料的侧链密度而得到的。将取向膜的材料液(取向材料)涂布到第1基板51、第2基板54各自的一面,在无尘烘烤箱中对它们进行烘焙(例如160℃、1小时)。作为取向膜的材料液的涂布方法,可以使用柔版印刷、喷墨印刷、或者旋涂法。虽然这里使用了旋涂法,但即便使用其他的方式结果也是同样的。取向膜53、57的膜厚例如为接着,对各取向膜53、57进行作为取向处理的摩擦处理。摩擦时的压入量例如设定为0.8mm。由此,各取向膜53、57能够使得液晶分子产生20°~60°左右的预倾角。Next,
接着,将第1基板51与第2基板54贴合。在第1基板51上预先印刷密封材料。接着,在第1基板51与第2基板54之间注入液晶材料,由此形成液晶层60。在液晶材料中例如添加CB15作为手性材料。Next, the
由此完成本实施方式的液晶元件。本实施方式的这样的液晶元件在完成的时候,液晶层60取向为展曲扭曲状态。此时,透射率(或者反射率)比较低,成为较暗状态的外观。并且,当对液晶层60施加纵向电场时,液晶层60的取向转变为反向扭曲状态,在关闭了电场之后也维持该状态。此时,透射率(或反射率)比较高,成为较亮状态的外观。接着,当对液晶层60施加横向电场时,液晶层60的取向再次向展曲扭曲状态转变,在关闭电场之后也维持该状态。此时的对比度具有如下趋势:在预倾角为45°附近时对比度最高,随着预倾角变低对比度也降低。特别是当预倾角小于20°时对比度显著降低,展曲扭曲状态与反向扭曲状态的透射率之差(或者反射率之差)几乎消失,确认到显示性不够的状况。Thus, the liquid crystal element of this embodiment is completed. When such a liquid crystal element of this embodiment is completed, the
接着,对利用了上述液晶元件所具有的记忆性的可进行低功耗驱动的液晶显示装置的结构例进行说明。Next, a configuration example of a liquid crystal display device capable of driving with low power consumption utilizing the memory characteristic of the above-mentioned liquid crystal element will be described.
图6是示意地示出液晶显示装置的结构例的图。图6所示的液晶显示装置是将多个像素部74排列成矩阵状而构成的纯矩阵型的液晶显示装置,使用了上述的液晶元件作为各像素部74。具体地讲,液晶显示装置构成为包含:在X方向上延伸的m根控制线B1~Bm;对这些控制线B1~Bm提供控制信号的驱动器71;分别与控制线B1~Bm交叉地在Y方向上延伸的n根控制线A1~An;对这些控制线A1~An提供控制信号的驱动器72;分别与控制线B1~Bm交叉地在Y方向上延伸的n根控制线C1~Cn和D1~Dn;对这些控制线C1~Cn和D1~Dn提供控制信号的驱动器73;以及设置在控制线B1~Bm与控制线A1~An的各交点处的像素部74。FIG. 6 is a diagram schematically showing a configuration example of a liquid crystal display device. The liquid crystal display device shown in FIG. 6 is a pure matrix type liquid crystal display device configured by arranging a plurality of
各控制线B1~Bm、A1~An、C1~Cn以及D1~Dn例如由形成为条纹状的ITO等透明导电膜构成。控制线B1~Bm与A1~An相交叉的部分作为上述的第1电极52和第2电极55发挥功能(参照图3)。另外,控制线C1~Cn设置在与各像素部74对应的区域中,与作为第3电极58的梳齿状的电极支(在图6中省略图示)连接。同样,控制线D1~Dn设置在与各像素部74对应的区域中,与作为第4电极59的梳齿状的电极支(在图6中省略图示)连接。Each of the control lines B1 to Bm, A1 to An, C1 to Cn, and D1 to Dn is made of, for example, a transparent conductive film such as ITO formed in a stripe shape. Portions where the control lines B1 to Bm intersect A1 to An function as the aforementioned
作为图6所示结构的液晶显示装置的驱动法,可以考虑各种方法。例如,对按照控制线B1、B2、B3…每根线进行显示改写的方法(线依次驱动法)进行说明。此时,只要对希望进行相对较亮的显示(反向扭曲状态)的像素部74施加纵向电场,对希望进行相对较暗的显示(展曲扭曲状态)的像素部74施加横向电场即可。Various methods can be considered as a driving method of the liquid crystal display device having the structure shown in FIG. 6 . For example, a method of performing display rewriting for each of the control lines B1 , B2 , B3 . . . (line sequential driving method) will be described. At this time, it is only necessary to apply a vertical electric field to the
例如,对控制线B1施加不会产生取向状态的转变的程度的矩形波电压(例如5V左右且为150Hz),对控制线A1~An、C1~Cn以及D1~Dn施加与其同步、或者错开半个周期的阈值电压左右的矩形波电压(例如5V左右且为150Hz)。For example, a rectangular wave voltage (for example, about 5 V and 150 Hz) is applied to the control line B1 to such an extent that no transition of the orientation state occurs, and the control lines A1 to An, C1 to Cn, and D1 to Dn are applied to the control lines A1 to An, C1 to Cn, and D1 to Dn synchronously or half-shifted. A rectangular wave voltage around the threshold voltage of one cycle (for example, about 5V and 150Hz).
详细地讲,针对控制线A1~An中与希望进行较亮显示的像素部74对应的控制线,施加与施加给控制线B1的矩形波电压错开半个周期的矩形波电压。此时,不对控制线C1~Cn和D1~Dn施加电压。由此,成为对像素部74的液晶元件实际施加了10V左右的电压(纵向电场)的状态。如果该电压为饱和电压以上,则使液晶层60产生取向状态的转变,能够改变该像素部74的透射率。另一方面,针对控制线A1~An中与不需要改变显示的像素部74对应的控制线,施加与施加给控制线B1的矩形波电压同步的矩形波电压。此时也不对控制线C1~Cn和D1~Dn施加电压。由此,在该像素部74中,成为实际上没有施加电压的状态。因此,在液晶层60中不产生取向状态的转变,透射率不变化。Specifically, a rectangular wave voltage shifted by a half cycle from the rectangular wave voltage applied to the control line B1 is applied to the control line corresponding to the
另外,针对控制线C1~Cn和D1~Dn中与希望进行较暗显示的像素部74对应的控制线,施加与施加给控制线B1的矩形波电压错开半个周期的矩形波电压。此时不对控制线A1~An施加电压。由此,成为对像素部74的液晶元件实际施加了10V左右的电压(横向电场)的状态。如果该电压为饱和电压以上,则使液晶层60产生取向状态的转变,能够改变该像素部74的透射率。另一方面,针对控制线C1~Cn和D1~Dn中与不需要改变显示的像素部74对应的控制线,施加与施加给控制线B1的矩形波电压同步的矩形波电压。此时也不对控制线A1~An施加电压。由此,在该像素部74中,成为实际上没有施加电压的状态。因此,在液晶层60中不产生取向状态的转变,透射率不变化。In addition, a rectangular wave voltage shifted by a half cycle from the rectangular wave voltage applied to the control line B1 is applied to the control line corresponding to the
通过按照控制线B2、B3…依次执行如上所述的驱动,能够进行点矩阵显示。通过如上所述的驱动而改写的显示状态可以半永久性地保持。在改写该显示时,只要再次从控制线B1起执行上述控制即可。另外,虽然这里示出了将本发明应用于所谓的纯矩阵型液晶显示装置的例子,但是也可以将本发明应用于使用了薄膜晶体管等的有源矩阵型液晶显示装置。在有源矩阵型液晶显示装置的情况下,不需要对控制线B1等每根线进行改写,因此能够缩短改写时间。另外,还可以施加阈值的2倍以上的电压,因此能够进行更高速的改写。然而,由于是在一侧的基板上存在横向电场用和纵向电场用的电极,因此每1个像素需要两个薄膜晶体管等。Dot matrix display can be performed by sequentially performing the driving as described above in accordance with the control lines B2, B3, . . . The display state rewritten by driving as described above can be held semi-permanently. When rewriting the display, the above-mentioned control may be executed again from the control line B1. In addition, although an example in which the present invention is applied to a so-called pure matrix liquid crystal display device is shown here, the present invention can also be applied to an active matrix liquid crystal display device using a thin film transistor or the like. In the case of an active-matrix liquid crystal display device, it is not necessary to rewrite each line such as the control line B1, so that rewriting time can be shortened. In addition, since a voltage twice or more than the threshold value can be applied, higher-speed rewriting can be performed. However, since the electrodes for the lateral electric field and the vertical electric field are present on one substrate, two thin film transistors and the like are required for one pixel.
(实施例1)(Example 1)
制造了具有在一个方向上延伸的线状的柱状间隔物的液晶元件。在本实施例中,在单侧的基板上形成了高度为4μm左右的柱状间隔物。在涂布感光性树脂材料时,将旋涂器的转速设为600rpm。另外,使用与柱状间隔物的形状对应地开口成线状的负性光掩模(线宽为40μm、线间距为400μm),进行了曝光。除此以外的工序与上述实施方式相同。优选不在用于密封液晶层的主密封材料的部分中形成该线状的柱状间隔物。接着,作为取向膜,使用了聚酰亚胺膜,该聚酰亚胺膜是将通常作为垂直取向膜使用的材料的侧链密度调整为能够产生适当的预倾角而得到的。将烘焙温度设定在160℃~260℃之间。作为取向膜的形成方法,可以使用柔版印刷、喷墨印刷、或者旋涂法。虽然这里使用了旋涂法,但即便使用其他方式结果也是相同的。取向膜的膜厚为接着进行了摩擦处理。摩擦时的压入量为0..8mm,扭曲角为70°。单元厚度d为4μm。在注入的液晶材料中添加了手性材料。手性材料的添加量为d/p=0.20~0.53。关于偏振板,以彼此的透射轴大致正交、且各偏振板的透射轴与摩擦方向成15°的方式进行了配置。A liquid crystal element having linear columnar spacers extending in one direction was manufactured. In this embodiment, columnar spacers with a height of about 4 μm are formed on one side of the substrate. When applying the photosensitive resin material, the rotation speed of the spin coater was set to 600 rpm. In addition, exposure was performed using a negative photomask (line width: 40 μm, line pitch: 400 μm) having linear openings corresponding to the shapes of the columnar spacers. Other steps are the same as those in the above-mentioned embodiment. It is preferable not to form the linear columnar spacers in the part of the main sealing material for sealing the liquid crystal layer. Next, as an alignment film, a polyimide film obtained by adjusting the side chain density of a material generally used as a vertical alignment film so that an appropriate pretilt angle can be generated was used. Set the baking temperature between 160°C and 260°C. As a method for forming the alignment film, flexographic printing, inkjet printing, or spin coating can be used. Although the spin coating method was used here, the result is the same even if other methods are used. The film thickness of the alignment film is This was followed by a rubbing treatment. The press-in amount during friction is 0..8mm, and the twist angle is 70°. The cell thickness d is 4 μm. A chiral material is added to the injected liquid crystal material. The amount of chiral material added is d/p=0.20-0.53. The polarizing plates were arranged so that their transmission axes were substantially perpendicular to each other, and the transmission axis of each polarizing plate was at 15° to the rubbing direction.
图7(A)~图7(D)是示出实施例1的液晶元件的显微镜观察像的图。在各图中,看起来相对较亮的区域对应于展曲扭曲状态(初始取向),看起来较暗的区域对应于反向扭曲状态(通过纵向电场而切换的区域)。以往,两个区域的边界错乱而成为锯齿状,当仔细观察该部分时,观察到如下情形:随机散布的球状间隔物相连地形成了区域的边界线,取决于球状间隔物的位置而保持取向的记忆状态。另一方面,如图7(A)~图7(D)所示,在实施例1中,观察到如下情形:从反向扭曲状态向展曲扭曲状态的转变沿着线状的柱状间隔物而被封堵住。详细地讲,按照图7(A)、图7(B)、图7(C)、图7(D)的顺序,以时间顺序示出了电场施加时的状态。虽然也与用于产生纵向电场的电极位置有关,但是,通过使由柱状间隔物实现的隔离壁的延伸方向与展曲扭曲状态的区域和反向扭曲状态的区域之间的边界部(即,可施加纵向电场的电极的端部)一致,能够使得这两个取向的区域成为非连续状态,能够利用柱状间隔物双向地阻断取向状态的转变,能够提高取向状态的记忆性。针对该实施例1的液晶元件,为了调查保持取向状态的稳定性,以90℃加热30分钟左右进行了观察,确认到各个取向状态(展曲扭曲状态或反向扭曲状态)稳定地保持,加热前后,在展曲扭曲区域与反向扭曲区域之间的边界部处也没有发生变化(参照图7(D))。另外可知,在实施例1的液晶元件中完全没有看到在以往的液晶元件的展曲扭曲取向区域中观察到的向错线。已知向错线是由作为间隙控制材料的球状间隔物相连而形成的,而在不需要间隙控制材料的本实施例1的液晶元件中,能够消除向错线。7(A) to 7(D) are diagrams showing microscopic observation images of the liquid crystal element of Example 1. FIG. In each figure, areas that appear relatively bright correspond to the splay twist state (initial orientation), and areas that appear dark correspond to the reverse twist state (area switched by the longitudinal electric field). In the past, the boundary between the two domains was disorganized and jagged, but when this part was carefully observed, it was observed that randomly scattered spherical spacers connected to form the boundary line of the domain, and the orientation was maintained depending on the position of the spherical spacers state of memory. On the other hand, as shown in FIGS. 7(A) to 7(D), in Example 1, it was observed that the transition from the reverse twisted state to the splayed twisted state was along the linear column spacer And was blocked. In detail, states at the time of application of an electric field are shown in chronological order in the order of FIG. 7(A), FIG. 7(B), FIG. 7(C), and FIG. 7(D). Although it is also related to the position of the electrode for generating the longitudinal electric field, by making the extension direction of the partition wall realized by the columnar spacer and the boundary portion between the region of the splay twist state and the region of the reverse twist state (that is, The ends of the electrodes to which the longitudinal electric field can be applied) are consistent, the two alignment regions can be made discontinuous, the transition of the alignment state can be bidirectionally blocked by the columnar spacer, and the memory of the alignment state can be improved. The liquid crystal element of Example 1 was observed by heating at 90°C for about 30 minutes in order to investigate the stability of maintaining the orientation state. Before and after, there is no change in the boundary portion between the splay twist region and the reverse twist region (see FIG. 7(D) ). In addition, it was found that the disclination lines observed in the spread-twisted alignment region of the conventional liquid crystal element were not observed in the liquid crystal element of Example 1 at all. It is known that disclination lines are formed by connecting spherical spacers as a gap control material, but in the liquid crystal element of the first embodiment which does not require a gap control material, the disclination lines can be eliminated.
(实施例2)(Example 2)
制造了具有配置成矩阵状的点状的柱状间隔物的液晶元件。在本实施例中,在单侧的基板上形成了高度为4μm左右的柱状间隔物。在涂布感光性树脂材料时,将旋涂器的转速设为600rpm。另外,使用与柱状间隔物的形状对应地开口成点状的负性光掩模(点尺寸为点密度为3.8%左右),进行了曝光。除此以外的工序与上述情况相同。优选不在用于密封液晶层的主密封材料的部分中形成该点状的柱状间隔物。除此以外的制造条件与实施例1的情况相同。A liquid crystal element having dot-like columnar spacers arranged in a matrix was manufactured. In this embodiment, columnar spacers with a height of about 4 μm are formed on one side of the substrate. When applying the photosensitive resin material, the rotation speed of the spin coater was set to 600 rpm. In addition, a negative photomask with dots opening corresponding to the shape of the columnar spacers (dot size of The dot density is about 3.8%), and the exposure was performed. The steps other than that are the same as in the above case. It is preferable not to form the dot-like columnar spacers in the portion of the main sealing material for sealing the liquid crystal layer. The manufacturing conditions other than that are the same as in the case of Example 1.
图8是示出实施例2的液晶元件的显微镜观察像的图。在图中,看起来相对较亮的区域对应于展曲扭曲状态(初始取向),看起来较暗的区域对应于反向扭曲状态(通过纵向电场而切换的区域)。根据图8可知,展曲扭曲状态的区域与反向扭曲状态的区域的边界线成为清晰的直线状。这里可知:图8中观察到的边界线与用于施加纵向电场的电极的端部大致一致,这样,通过使得点状的柱状间隔物的位置与电极的位置一致,能够使展曲扭曲状态与反向扭曲状态的边界线变得清楚。另外,为了得到如上所述的柱状间隔物的配置,只要在形成柱状间隔物时的曝光中与电极的位置对应地调整光掩模的位置即可,不用特别追加工序。虽然这里对电极的端部形状为直线状的情况进行了说明,但是电极的端部形状也可以是曲线状。此时,只要使用设计成按照曲线的位置来配置点状的柱状间隔物的光掩模即可。另外,即使柱状间隔物的位置略微改变,只要使点密度大致相同,就不会对性能和显示质量产生影响。另外,关于此时柱状间隔物的位置,优选的是,朝向电极内侧离电极端部最短距离的柱状间隔物配置在离电极端部100μm以内的位置。另外,如图8的实施例所示,如果柱状间隔物以100μm间距进行平面配置,则无论哪个位置都满足上述条件,因此不需要使电极与柱状间隔物的位置高精度地一致。即使在柱状间隔物的间距比100μm大、或者不规则的情况下,如果采用如下配置,则没有问题,即:在从形成像素的电极的端部起朝向内侧100μm以内的区域中,最短距离处的柱状间隔物与电极的端部形状一致。另外,如本实施例2所示,在使用了点状的柱状间隔物的情况下,与使用了如实施例1那样的线状的柱状间隔物的情况相比,更容易注入液晶材料。这是因为,妨碍液晶材料流动的要素少。FIG. 8 is a view showing a microscope observation image of a liquid crystal element of Example 2. FIG. In the figure, areas that appear relatively brighter correspond to the splay twist state (initial orientation), and areas that appear darker correspond to the reverse twist state (areas switched by the longitudinal electric field). As can be seen from FIG. 8 , the boundary line between the region in the splay twist state and the region in the reverse twist state becomes a clear straight line. Here, it can be seen that the boundary line observed in FIG. 8 roughly coincides with the end of the electrode for applying the longitudinal electric field. Thus, by making the position of the dot-shaped columnar spacer coincide with the position of the electrode, the splay-twisted state and the electrode can be adjusted. The boundary line of the reverse twisted state becomes clear. In addition, in order to obtain the arrangement of the columnar spacers as described above, it is only necessary to adjust the position of the photomask in accordance with the positions of the electrodes during the exposure at the time of forming the columnar spacers, and no special additional steps are required. Although the case where the shape of the end portion of the electrode is linear has been described here, the shape of the end portion of the electrode may be curved. In this case, it is only necessary to use a photomask designed to arrange dot-shaped columnar spacers in accordance with the positions of the curves. In addition, even if the positions of the columnar spacers are slightly changed, as long as the dot density is made approximately the same, performance and display quality will not be affected. In addition, regarding the position of the columnar spacer at this time, it is preferable that the columnar spacer facing the inside of the electrode at the shortest distance from the electrode end is arranged within 100 μm from the electrode end. In addition, as shown in the example of FIG. 8 , if the columnar spacers are planarly arranged at a pitch of 100 μm, the above conditions can be satisfied at any position, so it is not necessary to align the positions of the electrodes and the columnar spacers with high precision. Even if the pitch of the columnar spacers is larger than 100 μm or irregular, there is no problem if the arrangement is adopted such that, in the region within 100 μm from the end of the electrode forming the pixel, at the shortest distance The columnar spacers conform to the shape of the ends of the electrodes. Also, as shown in Example 2, when dot-shaped columnar spacers are used, it is easier to inject the liquid crystal material than when linear columnar spacers like Example 1 are used. This is because there are few factors that hinder the flow of the liquid crystal material.
如上所述,根据本实施方式和各实施例,能够提高利用了两种取向状态间的转变的液晶元件在高温环境下的记忆性,且能够防止由向错线引起的显示质量的降低。As described above, according to the present embodiment and each of the examples, it is possible to improve the memory performance of a liquid crystal element utilizing the transition between two alignment states in a high-temperature environment, and to prevent a decrease in display quality due to disclination lines.
另外,液晶元件的制造工序基本上与一般的液晶元件的制造工序大致相同且导致成本上升的因素少。即,能够利用与一般液晶元件相同的制造技术低成本地进行制造。In addition, the manufacturing process of a liquid crystal element is basically the same as the manufacturing process of a general liquid crystal element, and there are few factors leading to an increase in cost. That is, it can be manufactured at low cost by the same manufacturing technology as that of a general liquid crystal element.
另外,在本实施方式等的液晶元件中,除了对显示进行改写时以外不需要电力,因此能够实现超低功耗驱动,能够实现也适合于透射型显示、反射型显示中的任意一种情况的显示。特别是在应用于反射型显示时,优势明显。In addition, in the liquid crystal element of the present embodiment and the like, since no power is required except when rewriting the display, ultra-low power consumption driving can be realized, and the liquid crystal element suitable for either a transmissive display or a reflective display can be realized. display. Especially when applied to reflective displays, the advantages are obvious.
另外,由于可以应用利用了取向状态的记忆性的驱动方法(线依次改写法等),因此不需要使用薄膜晶体管等切换元件,能够通过纯矩阵显示进行大容量的点矩阵显示。因此,能够以低成本实现大容量显示。In addition, since a driving method (line sequential rewriting method, etc.) that utilizes the memory of the alignment state can be applied, it is not necessary to use switching elements such as thin film transistors, and large-capacity dot matrix display can be performed by pure matrix display. Therefore, large-capacity display can be realized at low cost.
另外,本发明不限于上述实施方式的内容,可以在本发明的要旨的范围内进行各种变形来实施。例如,在上述实施方式等中,作为取向处理的具体例子,举出了摩擦处理,但是也可以使用除此以外的取向处理(例如,光取向法、倾斜蒸镀法等)。另外,说明中举出的数值条件等也只不过是适合的一例,不必限定于此。另外,可以在构成液晶层的液晶材料中添加可在紫外线等的作用下聚合的材料(单体),并且在向基板间注入液晶材料之后通过照射紫外线等使得上述单体聚合。此时,能够进一步改善取向状态的记忆性。In addition, this invention is not limited to the content of the said embodiment, Various deformation|transformation can be carried out within the range of the summary of this invention. For example, in the above-mentioned embodiments and the like, rubbing treatment was mentioned as a specific example of alignment treatment, but other alignment treatments (for example, photo-alignment method, oblique vapor deposition method, etc.) may be used. In addition, the numerical conditions and the like mentioned in the description are only suitable examples, and are not necessarily limited thereto. In addition, a material (monomer) polymerizable by ultraviolet light or the like may be added to the liquid crystal material constituting the liquid crystal layer, and the monomer may be polymerized by irradiating ultraviolet light or the like after injecting the liquid crystal material between the substrates. In this case, the memory property of the orientation state can be further improved.
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