CN103413001A - Through-silicon-via (TSV) three-dimensional coupling crosstalk noise model and modeling method thereof - Google Patents

Abstract

The invention discloses a through-silicon-via (TSV) three-dimensional coupling crosstalk noise model and a modeling method thereof. The modeling method comprises the following steps: inputting TSV manufacturing process information; dividing vertical height into multiple sections according to a TSV interconnecting structure in actual production, and calculating impedance of each material in each section or each layer; by virtue of the impedance deviation of the same dielectric layer introduced by the deviation of a manufacturing process, and in a manner of refining the sectioning of the height, independently calculating the impedance value of each section, and connecting the calculated impedance of each section to form an RCGL circuit model; and calculating a noise transfer function expression between double-port RCGL circuits consisting of adjacent TSVs. The model is refined into different height sections, and thus the method can be effectively used for establishing a TSV fault model. According to verification, the model has high accuracy, is rapidly established and has high extendibility.

Description

The three-dimensional coupling crosstalk noise model of a kind of silicon through hole and modeling method thereof

Technical field

The present invention relates to TSV(Through Silicon Via silicon through hole in integrated circuit) modeling of noise, particularly relate to the three-dimensional coupling crosstalk noise model of a kind of silicon through hole and modeling method thereof.

Background technology

Along with the processor technology progressively enters many nuclear system structures and stacking integrated epoch of 3D, the three-dimensional coupling crosstalk effect that high integration causes and TSV(Through Silicon Via silicon through hole) the yield problem of technique itself, for the design of communicating by letter in the many core sheets of 3D has brought new challenge.

Traditional noise source towards reliability design reference on the sheet of anti-crosstalk generally depends on the white noise form of expression, using this main design considerations as the reliability design scheme and Performance Evaluation standard, but this also may bring surdimensionnement (Over-Design), resource consumption to cross the problems such as high.And because 3D technique causes the data communication otherness of performance in the horizontal and vertical directions, and the needs that adapt to the characteristics of different 3D-NoC communication structures, normalized white noise sound source is not enough to provide closer to the many core reliabilities of real 3D verification environment index.

Towards the TSV technology of 3D integrated circuit (IC) design when further promoting circuit level, also increased the weight of the signal cross-talk problem on its vertical path, and along with circuit designers continuing to increase TSV transmission bandwidth demand, on unit area, the quantity of TSV also will go up simultaneously, and will be operated on higher transmission frequency.Therefore, by the TSV vertical-path crosstalk and the signal quality analysis introduced will become particularly important.Therefore the present invention will be based on generation reason and the mechanism analysis of crosstalk noise under the sub-micro three-dimensional process, foundation is towards the three-dimensional coupling crosstalk noise model of the many core stacked wafers of 3D form, and this model can be used as the main reference foundation of the anti-crosstalk fail-safe analysis of 3D integrated circuit and design.

Summary of the invention

The deficiency existed for overcoming above-mentioned prior art, the present invention's purpose is to provide the three-dimensional coupling crosstalk noise model of a kind of silicon through hole and modeling method thereof, it can calculate crossfire value fast and effectively, and can revise according to the deviation of Practical manufacturing technique, reach the quick and accuracy of modeling.

For reaching above-mentioned and other purpose, the invention provides the three-dimensional coupling crosstalk noise model of a kind of silicon through hole, wherein, this crosstalk noise model is according to two-wire line electromagnetic field couples model, the silicon substrate that transmission channel is provided between TSV and adjacent TSV is divided into to a plurality of impedance units independently separately, be interconnected to constitute the RCGL circuit model, adjacent TSV coupling between form the one group of dual-port cross-talk models that can calculate crossfire value.

Further, this crosstalk noise model comprises 2 signal TSV and two public domain TSV that the public domain end is provided for the signal transmission, each TSV port connects the levels signal value on TSV separately by connecting base plate, there is the layer of metal dielectric layer connecting base plate below, there is one deck field ion input horizon the dielectric layer below, for intercepting the n raceway groove, TSV embeds in silicon substrate, is separated with it by the insulation course be wrapped in.

Further, this RCGL circuit comprises two kinds of topological structures: the transmission direction along TSV mainly comprises the resistance R that forms the series connection of impedance on the TSV transmission path _TSVAnd inductance L _TSV, between two TSV, comprising the topological structure that characterizes coupling crosstalk, this topological structure substrate comprises two parallel branches, and branch road 1 is metallic dielectric layer capacitive reactance C _IMD, branch road two is by TSV insulation course SiO ₂Capacitive reactance C _TSVWith the impedance of field ion input horizon and substrate resistance in parallel, be composed in series.

Further, the impedance of every section TSV of refinement, consider every section resistance difference, then the complete RCGL circuit that is connected to each other.

Further, various piece impedometer formula is as follows:

A) each section TSV insulation course impedance,

$C_{\mathrm{TSV}}=2\mathrm{\π}{h}_{\mathrm{TSV}}{\mathrm{\ϵ}}_{\mathrm{ox}}/\ln \frac{r_{\mathrm{TSV}}+t_{\mathrm{ox}}}{r_{\mathrm{TSV}}},$ ε wherein _OxSiO ₂Medium parameter,

B) each section TSV direct impedance calculates, wherein μ _CuAnd σ _CuBe respectively magnetic permeability and the conductivity of copper, p is adjacent TSV spacing, and f is frequency of operation,

$R_{\mathrm{TSV}}=\frac{h_{\mathrm{TSV}}\sqrt{\mathrm{\πf}{\mathrm{\μ}}_{\mathrm{Cu}}/{\mathrm{\σ}}_{\mathrm{Cu}}}}{\mathrm{\π}{r}_{\mathrm{TSV}}},$ $L_{\mathrm{TSV}}=\frac{h_{\mathrm{TSV}}{\mathrm{\μ}}_{\mathrm{Cu}}}{\mathrm{\π}}\ln [\frac{p}{2r_{\mathrm{TSV}}}+\sqrt{{\left(\frac{p}{2r_{\mathrm{TSV}}}\right)}^2-1}]$

C) each section cylindricality TSV coupling between impedance and capacitive reactance account form all available following formula obtain, comprise metallic dielectric layer, field ion input horizon and substrate part, ε wherein, h and σ mean respectively the medium parameter of material to be calculated in each section, height and conductivity

$C=\frac{\mathrm{\π\ϵh}}{\ln [\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}+\sqrt{{\left(\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}\right)}^2-1}]}$ $R=\frac{1}{\mathrm{\π\σh}}\ln [\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}+\sqrt{{\left(\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}\right)}^2-1}].$

Further, the right noise transmission function of this coupling is:

$S_{21}=\left|\frac{{(Z_{\mathrm{sg}}+Z_{\mathrm{TSV}})}^2}{(Z_{\mathrm{sg}}+Z_{\mathrm{TSV}})(Z_{\mathrm{sg}}+Z_{\mathrm{ss}}+Z_{\mathrm{TSV}})+Z_{\mathrm{TSV}}(2Z_{\mathrm{sg}}+2Z_{\mathrm{TSV}}+Z_{\mathrm{ss}})}\right|,$

Z wherein _SgMean impedance between signal TSV and public domain TSV, Z _SsMean impedance between two coupling TSV, Z _TSVMean impedance on TSV self transmission path.

For achieving the above object, the present invention also provides the modeling method of the three-dimensional coupling crosstalk noise model of a kind of silicon through hole, comprises the steps:

Step 1, input TSV manufacturing process information;

Step 2, the TSV interconnection structure according to actual production, be divided into several sections by vertical height, calculate every section or every layer in the impedance of each material;

Step 3, by the same media layer impedance deviation that the manufacturing process deviation is introduced, can calculate separately each section resistance value and obtain by highly segmentation refinement, and each section impedance after calculating is connected and composed to the RCGL circuit model;

Step 4, calculate the noise transmission function expression between the dual-port RCGL circuit that adjacent TSV forms.

Further, this TSV manufacturing process information comprises each several part manufactured materials parameter, TSV spacing, TSV height, TSV thickness of insulating layer and TSV radius.

Further, in step 3, each several part impedometer formula is as follows:

A) each section TSV insulation course impedance, wherein ε _OxSiO ₂Medium parameter,

$C_{\mathrm{TSV}}=2\mathrm{\π}{h}_{\mathrm{TSV}}{\mathrm{\ϵ}}_{\mathrm{ox}}/\ln \frac{r_{\mathrm{TSV}}+t_{\mathrm{ox}}}{r_{\mathrm{TSV}}}$

B) each section TSV direct impedance calculates, wherein μ _CuAnd σ _CuBe respectively magnetic permeability and the conductivity of copper, p is adjacent TSV spacing, and f is frequency of operation,

$R_{\mathrm{TSV}}=\frac{h_{\mathrm{TSV}}\sqrt{\mathrm{\πf}{\mathrm{\μ}}_{\mathrm{Cu}}/{\mathrm{\σ}}_{\mathrm{Cu}}}}{\mathrm{\π}{r}_{\mathrm{TSV}}},$ $L_{\mathrm{TSV}}=\frac{h_{\mathrm{TSV}}{\mathrm{\μ}}_{\mathrm{Cu}}}{\mathrm{\π}}\ln [\frac{p}{2r_{\mathrm{TSV}}}+\sqrt{{\left(\frac{p}{2r_{\mathrm{TSV}}}\right)}^2-1}]$

C) each section cylindricality TSV coupling between impedance and capacitive reactance account form all available following formula obtain, comprise metallic dielectric layer, field ion input horizon and substrate part, ε wherein, h and σ mean respectively the medium parameter of material to be calculated in each section, height and conductivity

$C=\frac{\mathrm{\π\ϵh}}{\ln [\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}+\sqrt{{\left(\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}\right)}^2-1}]}$ $R=\frac{1}{\mathrm{\π\σh}}\ln [\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}+\sqrt{{\left(\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}\right)}^2-1}].$

Further, in step 4, this noise transmission function expression is:

$S_{21}=\left|\frac{{(Z_{\mathrm{sg}}+Z_{\mathrm{TSV}})}^2}{(Z_{\mathrm{sg}}+Z_{\mathrm{TSV}})(Z_{\mathrm{sg}}+Z_{\mathrm{ss}}+Z_{\mathrm{TSV}})+Z_{\mathrm{TSV}}(2Z_{\mathrm{sg}}+2Z_{\mathrm{TSV}}+Z_{\mathrm{ss}})}\right|$

Z wherein _SgMean impedance between signal TSV and public domain TSV, Z _SsMean impedance between two coupling TSV, Z _TSVMean impedance on TSV self transmission path.

Compared with prior art, the three-dimensional coupling crosstalk noise model of a kind of silicon through hole of the present invention and modeling method thereof are by setting up towards the three-dimensional coupling crosstalk noise model of the many core stacked wafers of 3D form, not only can calculate fast and effectively crossfire value, and can revise according to the deviation of Practical manufacturing technique, reach the purpose fast and accurately of modeling.

The accompanying drawing explanation

Fig. 1 a is the 3D model vertical view of the TSV interconnection structure of the three-dimensional coupling crosstalk noise model of a kind of silicon through hole of the present invention;

Fig. 1 b is the transverse side view of this TSV model;

Fig. 2 is the 2D cross-sectional configurations figure of the TSV interconnection structure of the three-dimensional coupling crosstalk noise model of a kind of silicon through hole of the present invention;

Fig. 3 is ideally the present invention's the right equivalent RCGL circuit diagram of TSV coupling;

Fig. 4 when considering TSV manufacturing process deviation, refinement above-mentioned TSV coupling to equivalent RCGL circuit diagram;

Fig. 5 is two right dual-port cross-talk models schematic diagram of signal TSV coupling that calculate according to above-mentioned RCGL circuit;

Fig. 6 is the flow chart of steps of the three-dimensional coupling crosstalk noise model of a kind of silicon through hole of the present invention modeling method.

Embodiment

Below by specific instantiation accompanying drawings embodiments of the present invention, those skilled in the art can understand other advantage of the present invention and effect easily by content disclosed in the present specification.The present invention also can be implemented or be applied by other different instantiation, and the every details in this instructions also can be based on different viewpoints and application, carries out various modifications and change not deviating under spirit of the present invention.

The three-dimensional coupling crosstalk noise model of a kind of silicon through hole of the present invention, its modeling pattern is according to two-wire line electromagnetic field couples model, the silicon substrate that transmission channel is provided between TSV and adjacent TSV is divided into to a plurality of impedance units independently separately, be interconnected to constitute the RCGL circuit model, adjacent TSV coupling between form one group of dual-port model that can calculate crossfire value.

Being the 3D model vertical view of the TSV interconnection structure of the three-dimensional coupling crosstalk noise model of a kind of silicon through hole of the present invention as shown in Figure 1a, is the transverse side view of this TSV model shown in Fig. 1 b.The present invention's 3D model consists of four TSV, be respectively 2 for signal TSV with 2 public domain TSV of public domain end are provided.The height of TSV in model, radius, thickness of insulating layer, and between spacing can set according to the manufacturing process of different manufacturers.

The 2D cross-sectional configurations figure of the TSV interconnection structure of the three-dimensional coupling crosstalk noise model of a kind of silicon through hole of the present invention as shown in Figure 2, this 2D structure consists of 2 public domain TSV and 2 signal TSV equally, each TSV port connects the levels signal value on TSV separately by connecting base plate (pad), there is the layer of metal dielectric layer connecting base plate below, there is one deck field ion input horizon the dielectric layer below, has played the effect of n ditch blockage.TSV embeds in silicon substrate, has the insulation course be wrapped in to separate with it.H in Fig. 2 _IMDFor the metal medium layer height; h _FieldFor field example layer height; t _OxFor the TSV thickness of insulating layer; P _SgFor signal TSV and public domain TSV spacing; P _SsBe two signal TSV spacings.

Be illustrated in figure 3 ideally the present invention's the right equivalent RCGL circuit of TSV coupling, this circuit is not considered the caused deviation of TSV manufacturing process, for example thinks that the TSV radius equates everywhere, and the TSV thickness of insulating layer is consistent everywhere.Ideally this, think that between each section TSV self transmission path and adjacent TSV, the impedance on coupling path all equates everywhere, circuit model can be reduced to Fig. 3 structure.This circuit model mainly comprises two kinds of topological structures: the transmission direction along TSV mainly comprises the resistance R that forms the series connection of impedance on the TSV transmission path _TSVAnd inductance L _TSV, between two TSV, comprising the topological structure that characterizes coupling crosstalk, this topological structure substrate comprises two parallel branches, and branch road 1 is metallic dielectric layer capacitive reactance C _IMD, branch road two is by TSV insulation course SiO ₂Capacitive reactance C _TSVWith the impedance of field ion input horizon and substrate resistance in parallel, be composed in series R _subAnd C _subFormation substrate resistance in parallel, R _FieldAnd C _FieldFormation field ion input horizon in parallel impedance.R in Fig. 3 _PortFor port Impedance, can mate is 50 Ω impedances; R _FieldAnd C _FieldFormation field ion input horizon in parallel impedance; R _subAnd C _subFormation substrate resistance in parallel; R _TSVAnd L _TSVImpedance on TSV transmission path in series; C _TSVFor TSV insulation course SiO ₂Capacitive reactance.

Be illustrated in figure 4 while considering TSV manufacturing process deviation, refinement above-mentioned TSV coupling to equivalent RCGL circuit.In Practical manufacturing, deviation occurs in TSV technique unavoidably, causes the TSV radius, on individual height section, difference occurs, or the TSV thickness of insulating layer is not to equate everywhere, and manufacturing defect even likely occurs, for example TSV insulation course short circuit, TSV self open circuit etc.Therefore be necessary the impedance of every section TSV of refinement, consider every section resistance difference, then the complete RCGL circuit model that is connected to each other.For example, the TSV radius of Practical manufacturing shows as up-small and down-big, while forming a taper, and when the impedance segmentation is calculated, Z _TSV1, Z _TSV2To Z _TSVnRadius r _TSV1, r _TSV2To r _TSVnIncreasing; And for example, when certain section TSV insulation course that highly is positioned at the k section because approximate short circuit, t occur process deviation _oxkVery little.Therefore this RCGL model after refinement can be used for the TSV Analysis of Failure Model, and the increase of number of fragments will improve the accuracy of TSV model.In Fig. 4, various piece impedometer formula is as follows:

A) each section TSV insulation course impedance, wherein ε _OxSiO ₂Medium parameter:

$C_{\mathrm{TSV}}=2\mathrm{\π}{h}_{\mathrm{TSV}}{\mathrm{\ϵ}}_{\mathrm{ox}}/\ln \frac{r_{\mathrm{TSV}}+t_{\mathrm{ox}}}{r_{\mathrm{TSV}}}$

B) each section TSV direct impedance calculates, wherein μ _CuAnd σ _CuBe respectively magnetic permeability and the conductivity of copper, p is adjacent TSV spacing, and f is frequency of operation:

$R_{\mathrm{TSV}}=\frac{h_{\mathrm{TSV}}\sqrt{\mathrm{\πf}{\mathrm{\μ}}_{\mathrm{Cu}}/{\mathrm{\σ}}_{\mathrm{Cu}}}}{\mathrm{\π}{r}_{\mathrm{TSV}}},$ $L_{\mathrm{TSV}}=\frac{h_{\mathrm{TSV}}{\mathrm{\μ}}_{\mathrm{Cu}}}{\mathrm{\π}}\ln [\frac{p}{2r_{\mathrm{TSV}}}+\sqrt{{\left(\frac{p}{2r_{\mathrm{TSV}}}\right)}^2-1}]$

C) each section cylindricality TSV coupling between impedance and capacitive reactance account form all available following formula obtain, comprise metallic dielectric layer, field ion input horizon and substrate part.ε wherein, h and σ mean respectively the medium parameter of material to be calculated in each section, height and conductivity.

$C=\frac{\mathrm{\π\ϵh}}{\ln [\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}+\sqrt{{\left(\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}\right)}^2-1}]}$ $R=\frac{1}{\mathrm{\π\σh}}\ln [\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}+\sqrt{{\left(\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}\right)}^2-1}]$

Be illustrated in figure 5 the two right dual-port cross-talk models of signal TSV coupling, wherein Z according to above-mentioned RCGL circuit, calculating _SgMean impedance between signal TSV and public domain TSV, Z _SsMean impedance between two coupling TSV, Z _TSVMean impedance on TSV self transmission path.According to this dual-port model, can calculate the right noise transmission function S of TSV coupling ₂₁, this value can be used as a kind of assessment of TSV signal cross-talk:

$S_{21}=\left|\frac{{(Z_{\mathrm{sg}}+Z_{\mathrm{TSV}})}^2}{(Z_{\mathrm{sg}}+Z_{\mathrm{TSV}})(Z_{\mathrm{sg}}+Z_{\mathrm{ss}}+Z_{\mathrm{TSV}})+Z_{\mathrm{TSV}}(2Z_{\mathrm{sg}}+2Z_{\mathrm{TSV}}+Z_{\mathrm{ss}})}\right|$

TSV coupling provided by the present invention has accuracy preferably to model, and modeling is convenient, and extensibility is good, can assist the degree that interacts of each signal between 3D circuit designer rapid evaluation TSV.In addition, adopt the modeling pattern of sectional type, refinement the TSV calculation of parameter of each height section, can be by changing the impedance computation parameter of a certain section, set up the fault model of certain TSV, the convenient analysis due to manufacturing process deviation or the decline of the caused TSV signal quality of defect.

Fig. 6 is the flow chart of steps of the modeling method of the three-dimensional coupling crosstalk noise model of a kind of silicon through hole of the present invention.As shown in Figure 6, the modeling method of the three-dimensional coupling crosstalk noise model of a kind of silicon through hole of the present invention, comprise the steps:

Step 601, input TSV manufacturing process information, information comprises: each several part manufactured materials parameter, TSV spacing, TSV height, TSV thickness of insulating layer, and TSV radius.

Step 602, TSV interconnection structure according to actual production, vertical height is divided into to several sections, calculate the impedance of each material in every section (every layer), these impedances comprise the impedance on TSV self transmission path, impedance between many TSV on coupling path, surface metal dielectric layer and the impedance of field ion input horizon etc.

Step 603, by the same media layer impedance deviation that the manufacturing process deviation is introduced, can calculate separately each section resistance value and obtain by highly segmentation refinement, and each section impedance after calculating is connected and composed to the RCGL circuit model.

Step 604, calculate the noise transmission function expression between the dual-port RCGL circuit that adjacent TSV forms.This expression argument, according to TSV manufacturing process information, can be used as signal coupling assessment foundation.

In step 603, various piece impedometer formula is as follows:

A) each section TSV insulation course impedance, wherein ε _OxSiO ₂Medium parameter:

$C_{\mathrm{TSV}}=2\mathrm{\π}{h}_{\mathrm{TSV}}{\mathrm{\ϵ}}_{\mathrm{ox}}/\ln \frac{r_{\mathrm{TSV}}+t_{\mathrm{ox}}}{r_{\mathrm{TSV}}}$

B) each section TSV direct impedance calculates, wherein μ _CuAnd σ _CuBe respectively magnetic permeability and the conductivity of copper, p is adjacent TSV spacing, and f is frequency of operation:

$R_{\mathrm{TSV}}=\frac{h_{\mathrm{TSV}}\sqrt{\mathrm{\πf}{\mathrm{\μ}}_{\mathrm{Cu}}/{\mathrm{\σ}}_{\mathrm{Cu}}}}{\mathrm{\π}{r}_{\mathrm{TSV}}},$ $L_{\mathrm{TSV}}=\frac{h_{\mathrm{TSV}}{\mathrm{\μ}}_{\mathrm{Cu}}}{\mathrm{\π}}\ln [\frac{p}{2r_{\mathrm{TSV}}}+\sqrt{{\left(\frac{p}{2r_{\mathrm{TSV}}}\right)}^2-1}]$

C) each section cylindricality TSV coupling between impedance and capacitive reactance account form all available following formula obtain, comprise metallic dielectric layer, field ion input horizon and substrate part.ε wherein, h and σ mean respectively the medium parameter of material to be calculated in each section, height and conductivity.

$C=\frac{\mathrm{\π\ϵh}}{\ln [\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}+\sqrt{{\left(\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}\right)}^2-1}]}$ $R=\frac{1}{\mathrm{\π\σh}}\ln [\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}+\sqrt{{\left(\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}\right)}^2-1}]$

In step 604, this noise transmission function expression is:

$S_{21}=\left|\frac{{(Z_{\mathrm{sg}}+Z_{\mathrm{TSV}})}^2}{(Z_{\mathrm{sg}}+Z_{\mathrm{TSV}})(Z_{\mathrm{sg}}+Z_{\mathrm{ss}}+Z_{\mathrm{TSV}})+Z_{\mathrm{TSV}}(2Z_{\mathrm{sg}}+2Z_{\mathrm{TSV}}+Z_{\mathrm{ss}})}\right|$

Z wherein _SgMean impedance between signal TSV and public domain TSV, Z _SsMean impedance between two coupling TSV, Z _TSVMean impedance on TSV self transmission path.

In sum, the three-dimensional coupling crosstalk noise model of a kind of silicon through hole of the present invention and modeling method thereof are by setting up towards the three-dimensional coupling crosstalk noise model of the many core stacked wafers of 3D form, model is refined as to the differing heights section, can be effective to the foundation of TSV fault model, it not only can calculate crossfire value fast and effectively, and can revise according to the deviation of Practical manufacturing technique, reach the purpose fast and accurately of modeling.

Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not be used to limiting the present invention.Any those skilled in the art all can, under spirit of the present invention and category, modify and change above-described embodiment.Therefore, the scope of the present invention, should be as listed as claims.

Claims (10)

1. the three-dimensional coupling crosstalk noise model of a silicon through hole, it is characterized in that: this crosstalk noise model is according to two-wire line electromagnetic field couples model, the silicon substrate that transmission channel is provided between TSV and adjacent TSV is divided into to a plurality of impedance units independently separately, be interconnected to constitute the RCGL circuit model, adjacent TSV coupling between form the one group of dual-port cross-talk models that can calculate crossfire value.

2. the three-dimensional coupling crosstalk noise model of silicon through hole as claimed in claim 1, it is characterized in that: this crosstalk noise model comprises 2 signal TSV and two public domain TSV that the public domain end is provided for the signal transmission, each TSV port connects the levels signal value on TSV separately by connecting base plate, there is the layer of metal dielectric layer connecting base plate below, there is one deck field ion input horizon the dielectric layer below, for intercepting the n raceway groove, TSV embeds in silicon substrate, is separated with it by the insulation course be wrapped in.

3. the three-dimensional coupling crosstalk noise model of silicon through hole as claimed in claim 2, is characterized in that, this RCGL circuit comprises two kinds of topological structures: the transmission direction along TSV mainly comprises the resistance R that forms the series connection of impedance on the TSV transmission path _TSVAnd inductance L _TSV, between two TSV, comprising the topological structure that characterizes coupling crosstalk, this topological structure substrate comprises two parallel branches, and branch road 1 is metallic dielectric layer capacitive reactance C _IMD, branch road two is by TSV insulation course SiO ₂Capacitive reactance C _TSVWith the impedance of field ion input horizon and substrate resistance in parallel, be composed in series.

4. the three-dimensional coupling crosstalk noise model of silicon through hole as claimed in claim 3 is characterized in that: the impedance of every section TSV of refinement, consider every section resistance difference, then the complete RCGL circuit that is connected to each other.

5. the three-dimensional coupling crosstalk noise model of silicon through hole as claimed in claim 4, is characterized in that, various piece impedometer formula is as follows:

A) each section TSV insulation course impedance,

$C_{\mathrm{TSV}}=2\mathrm{\π}{h}_{\mathrm{TSV}}{\mathrm{\ϵ}}_{\mathrm{ox}}/\ln \frac{r_{\mathrm{TSV}}+t_{\mathrm{ox}}}{r_{\mathrm{TSV}}},$ ε wherein _OxSiO ₂Medium parameter,

B) each section TSV direct impedance calculates, wherein μ _CuAnd σ _CuBe respectively magnetic permeability and the conductivity of copper, p is adjacent TSV spacing, and f is frequency of operation,

$R_{\mathrm{TSV}}=\frac{h_{\mathrm{TSV}}\sqrt{\mathrm{\πf}{\mathrm{\μ}}_{\mathrm{Cu}}/{\mathrm{\σ}}_{\mathrm{Cu}}}}{\mathrm{\π}{r}_{\mathrm{TSV}}},$ $L_{\mathrm{TSV}}=\frac{h_{\mathrm{TSV}}{\mathrm{\μ}}_{\mathrm{Cu}}}{\mathrm{\π}}\ln [\frac{p}{2r_{\mathrm{TSV}}}+\sqrt{{\left(\frac{p}{2r_{\mathrm{TSV}}}\right)}^2-1}]$

C) each section cylindricality TSV coupling between impedance and capacitive reactance account form all available following formula obtain, comprise metallic dielectric layer, field ion input horizon and substrate part, ε wherein, h and σ mean respectively the medium parameter of material to be calculated in each section, height and conductivity

$C=\frac{\mathrm{\π\ϵh}}{\ln [\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}+\sqrt{{\left(\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}\right)}^2-1}]}$ $R=\frac{1}{\mathrm{\π\σh}}\ln [\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}+\sqrt{{\left(\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}\right)}^2-1}].$

6. the three-dimensional coupling crosstalk noise model of silicon through hole as claimed in claim 5, is characterized in that, the right noise transmission function of this coupling is:

$S_{21}=\left|\frac{{(Z_{\mathrm{sg}}+Z_{\mathrm{TSV}})}^2}{(Z_{\mathrm{sg}}+Z_{\mathrm{TSV}})(Z_{\mathrm{sg}}+Z_{\mathrm{ss}}+Z_{\mathrm{TSV}})+Z_{\mathrm{TSV}}(2Z_{\mathrm{sg}}+2Z_{\mathrm{TSV}}+Z_{\mathrm{ss}})}\right|,$

Z wherein _SgMean impedance between signal TSV and public domain TSV, Z _SsMean impedance between two coupling TSV, Z _TSVMean impedance on TSV self transmission path.

7. the modeling method of the three-dimensional coupling crosstalk noise model of silicon through hole, comprise the steps:

Step 1, input TSV manufacturing process information;

Step 2, the TSV interconnection structure according to actual production, be divided into several sections by vertical height, calculate every section or every layer in the impedance of each material;

Step 3, by the same media layer impedance deviation that the manufacturing process deviation is introduced, can calculate separately each section resistance value and obtain by highly segmentation refinement, and each section impedance after calculating is connected and composed to the RCGL circuit model;

Step 4, calculate the noise transmission function expression between the dual-port RCGL circuit that adjacent TSV forms.

8. the modeling method of the three-dimensional coupling crosstalk noise model of a kind of silicon through hole as claimed in claim 7, it is characterized in that: this TSV manufacturing process information comprises each several part manufactured materials parameter, TSV spacing, TSV height, TSV thickness of insulating layer and TSV radius.

9. the modeling method of the three-dimensional coupling crosstalk noise model of a kind of silicon through hole as claimed in claim 7, is characterized in that, in step 3, each several part impedometer formula is as follows:

A) each section TSV insulation course impedance, wherein ε _OxSiO ₂Medium parameter,

$C_{\mathrm{TSV}}=2\mathrm{\π}{h}_{\mathrm{TSV}}{\mathrm{\ϵ}}_{\mathrm{ox}}/\ln \frac{r_{\mathrm{TSV}}+t_{\mathrm{ox}}}{r_{\mathrm{TSV}}}$

B) each section TSV direct impedance calculates, wherein μ _CuAnd σ _CuBe respectively magnetic permeability and the conductivity of copper, p is adjacent TSV spacing, and f is frequency of operation,

$R_{\mathrm{TSV}}=\frac{h_{\mathrm{TSV}}\sqrt{\mathrm{\πf}{\mathrm{\μ}}_{\mathrm{Cu}}/{\mathrm{\σ}}_{\mathrm{Cu}}}}{\mathrm{\π}{r}_{\mathrm{TSV}}},$ $L_{\mathrm{TSV}}=\frac{h_{\mathrm{TSV}}{\mathrm{\μ}}_{\mathrm{Cu}}}{\mathrm{\π}}\ln [\frac{p}{2r_{\mathrm{TSV}}}+\sqrt{{\left(\frac{p}{2r_{\mathrm{TSV}}}\right)}^2-1}]$

C) each section cylindricality TSV coupling between impedance and capacitive reactance account form all available following formula obtain, comprise metallic dielectric layer, field ion input horizon and substrate part, ε wherein, h and σ mean respectively the medium parameter of material to be calculated in each section, height and conductivity

$C=\frac{\mathrm{\π\ϵh}}{\ln [\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}+\sqrt{{\left(\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}\right)}^2-1}]}$ $R=\frac{1}{\mathrm{\π\σh}}\ln [\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}+\sqrt{{\left(\frac{p}{2(r_{\mathrm{TSV}}+t_{\mathrm{ox}})}\right)}^2-1}].$

10. the modeling method of the three-dimensional coupling crosstalk noise model of a kind of silicon through hole as claimed in claim 9, is characterized in that, in step 4, this noise transmission function expression is:

$S_{21}=\left|\frac{{(Z_{\mathrm{sg}}+Z_{\mathrm{TSV}})}^2}{(Z_{\mathrm{sg}}+Z_{\mathrm{TSV}})(Z_{\mathrm{sg}}+Z_{\mathrm{ss}}+Z_{\mathrm{TSV}})+Z_{\mathrm{TSV}}(2Z_{\mathrm{sg}}+2Z_{\mathrm{TSV}}+Z_{\mathrm{ss}})}\right|$

Z wherein _SgMean impedance between signal TSV and public domain TSV, Z _SsMean impedance between two coupling TSV, Z _TSVMean impedance on TSV self transmission path.

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