CN103408301B - Ultrahigh voltage ceramic capacitor medium and preparation method thereof - Google Patents

Ultrahigh voltage ceramic capacitor medium and preparation method thereof Download PDF

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CN103408301B
CN103408301B CN201310303560.XA CN201310303560A CN103408301B CN 103408301 B CN103408301 B CN 103408301B CN 201310303560 A CN201310303560 A CN 201310303560A CN 103408301 B CN103408301 B CN 103408301B
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ceramic capacitor
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mgsno
batio
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CN103408301A (en
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黄新友
高春华
李军
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Guangdong Xincheng Technology Industry Co., Ltd
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Jiangsu University
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Abstract

The invention relates to the technical field of inorganic non-metallic materials, and especially relates to an ultrahigh voltage ceramic capacitor medium and a preparation method thereof. The formula of the medium comprises 55-90wt% of BaTiO3, 2-25wt% of SrTiO3, 2-15wt% of MgZr0.5Ti0.5O3, 0.05-10wt% of MgSnO3, 0.03-1.0wt% of CeO2, 0.1-1.5wt% of ZnO, and 0.03-1.0wt% of MnO2. A routine ceramic capacitor medium preparation method a capacitor ceramic common chemical raw material are adopted in the invention to prepare the lead-and-cadmium-free ultrahigh voltage ceramic capacitor medium and reduce the sintering temperature of the capacitor ceramic. The medium is suitable for preparing monolithic ceramic capacitors and multilayer tablet ceramic capacitors, substantially reduces the costs of the ceramic capacitors, improves the proof voltage to enlarge the application ranges of the capacitors and does not pollute the environment in the preparation and use processes.

Description

A kind of Ultrahigh voltage ceramic capacitor medium and preparation method thereof
Technical field
The present invention relates to technical field of inorganic nonmetallic materials, refer in particular to a kind of Ultrahigh voltage ceramic capacitor medium and preparation method thereof; It adopts conventional ceramic capacitor dielectric preparation method, utilize condenser ceramics general chemistry raw material, prepare unleaded, without the Ultrahigh voltage ceramic capacitor medium of cadmium, the sintering temperature of condenser ceramics can also be reduced, this medium is suitable for preparing monolithic ceramic capacitor and multiple-layer sheet ceramic capacitor, greatly can reduce the cost of ceramic capacitor, proof voltage can be improved to expand the range of application of ceramic capacitor simultaneously, and free from environmental pollution in preparation and use procedure.
Background technology
The field such as colour TV, computer, communication, Aero-Space, guided missile, navigation is high in the urgent need to puncture voltage, temperature stability good, reliability is high, miniaturized, jumbo ceramic capacitor; The sintering temperature of general single-chip high voltage ceramic capacitor dielectric is 1300 ~ 1430 DEG C, and ceramic capacitor dielectric sintering temperature of the present invention is 1250 ~ 1270 DEG C, greatly can reduce the cost of high voltage ceramic capacitor like this, the simultaneously not leaded and cadmium of this patent capacitor ceramic dielectric, condenser ceramics is free from environmental pollution in preparation and use procedure; In addition, the dielectric constant of condenser ceramics of the present invention is high, the capacity of ceramic capacitor can be improved like this and miniaturized, meet the development trend of ceramic capacitor, equally also can reduce the cost of ceramic capacitor, the raising of proof voltage is conducive to the scope of application and the fail safe that expand ceramic capacitor.
Be generally used for containing a certain amount of lead in the medium of production high voltage ceramic capacitor, this not only works the mischief to human body and environment in production, use and waste procedures, and also has harmful effect to stability.
Chinese periodical " electronic component and material " the 5th phase in 1989 is at " high Jie's high pressure 2B 4media ceramic " disclose a kind of high-voltage ceramic condenser medium material in a literary composition, this dielectric material adopts 97.8wt.%BaTiO 3+ 0.8wt.%Bi 2o 3+ 0.7wt.%Nb 2o 5+ 0.5wt.%CeO 2+ 0.2wt.%MnO 2formula, prepare sample with the technique of routine, its DIELECTRIC CONSTANT ε=2500 ~ 2600, tg δ=0.5-1.4%, DC break down voltage intensity is 7KV/mm; Though this medium belongs to unleaded dielectric material, it is poor to there is resistance to pressure in it, and dielectric constant is too little, and formula composition is different from this patent.
Chinese patent " a kind of high-voltage ceramic condenser medium " (patent No. ZL00112050.6) is though disclosed capacitor ceramic dielectric belongs to unleaded dielectric material, but dielectric constant is 1860-3300, proof voltage can reach more than 10kV/mm (direct current), sintering temperature is 1260-1400 DEG C, higher than this patent; Dielectric constant is too little, and far below this patent, and formula composition is different from this patent.
Chinese periodical " Jiangsu pottery " the 2nd phase in 1999 is at " BaTiO 3be easy fired height Jie X7R capacitor ceramics " disclose a kind of BaTiO in a literary composition 3middle easy fired height is situated between and meets the capacitor ceramics of X7R characteristic, and the formula of this dielectric material consists of (mass percent): (BaTiO 3+ Nd 2o 3) 89% ~ 92%+Bi 2o 32TiO 27.5 ~ 10%+ low-melting glass material 0.8%+50%Mn (NO 3) 2(aqueous solution) 0.205%.Wherein, low-melting glass material used is lead borosilicate low-melting glass, and medium is leaded, and does not relate to proof voltage, and dielectric constant is less than 3500, and much smaller than the dielectric constant of this patent, the formula composition of medium is also different from patent of the present invention.
Chinese periodical " South China Science & Engineering University's journal (natural science edition) " the 3rd phase in 1996 is at " intermediate sintering temperature BaTiO 3quito mutually ferroelectric porcelain X7R characteristic " inquire into BaTiO in a literary composition 3base porcelain intermediate sintering temperature mechanism, analyzes intermediate sintering temperature BaTiO 3the composition of base porcelain and uneven texture distribution are on the impact of dielectric constant and temperature characterisitic; BaTiO used 3raw material adopts the method for chemical coprecipitation to prepare, and can increase the cost of ceramic capacitor like this, and the BaTiO that this patent is used 3, SrTiO 3, CaZrO 3be adopt conventional chemical raw material with Solid phase synthesis respectively, composition is different from this patent, containing a certain amount of lead in component, and does not relate to proof voltage.
(number of patent application: 97117286.2), simultaneously it adopt Solid phase synthesis equivalence and aliovalent ion to replace (Sr separately patent " high Jie's high-performance medium temp. sintered chip multilayer ceramic capacitor porcelain " 2+, Zr 4+, Sn 4+, Nb 5+) BaTiO 3solid solution, add appropriate boron-lead-zinc-copper glass agglutinant, make porcelain at intermediate sintering temperature, its performance is: dielectric constant is more than or equal to 16000, and withstand voltage is 700V/mm; Although this patent dielectric constant is high, the material reported withstand voltage too poor, be only 700V/mm, its component contains a certain amount of lead in addition.
Separately have patent " manufacture method of high-voltage ceramic condenser medium " (patent No. 91101958.8), it adopts unconventional technique to prepare medium, i.e. flow casting molding film, then laminated medium body, carries out the even pressure of heating in vacuum, punching, then carries out binder removal, burns till and obtain by multilayer dielectricity body; The shortcoming of this patent is process of preparing complexity, causes cost of goods manufactured to increase, and the dielectric constant manufacturing the HV hall of gained by its medium formula is 1800-7200, and dielectric constant is high, and dielectric loss is comparatively large, the withstand voltage height not having this patent.
(number of patent application: 97117287.0), it adopts unique formula (percentage by weight) (BaTiO to also have Chinese patent " high-performance medium temp. sintered chip multilayer ceramic capacitor porcelain " 393 ~ 96%+Nb 2o 50.8 ~ 1.5%+Bi 2o 31.0 ~ 2.2%+ flux, 1.8 ~ 3.5%+ modifier 0.25 ~ 1.0%) obtain the condenser ceramics meeting following performance of intermediate sintering temperature: dielectric constant is 3000, and dielectric loss is less than 1.5%, and withstand voltage is 860V/mm; The flux of this patent contains a certain amount of lead, and the proof voltage of this patent is too poor, and dielectric constant is too low simultaneously, much smaller than this patent.
Also have Chinese patent " a kind of low temperature sintering high-voltage ceramic condenser medium " (number of patent application: 200410041863.x), it adopts unique formula (percentage by weight) (BaTiO 360-90%, SrTiO 31-20%CaZrO 30.1-10%, Nb 2o 50.01-1%, MgO0.01-1%, CeO 20.01-0.8%, ZnO0.01-0.6%, Co 2o 30.03-1%, bismuth lithium solid solution 0.05-10%) obtain the condenser ceramics meeting following performance of intermediate sintering temperature: dielectric constant is 2000 ~ 3000, proof voltage is more than 6kV/mm, the additive reducing sintering temperature is bismuth lithium solid solution, dielectric constant and the proof voltage of this patent are high less than this patent, and the formula composition of this patent is different from this patent.
Summary of the invention
The object of this invention is to provide a kind of Ultrahigh voltage ceramic capacitor medium.
The object of the present invention is achieved like this:
Ultrahigh voltage ceramic capacitor medium formula composition comprises (percentage by weight): BaTiO 355-90%, SrTiO 32-25%, MgZr 0.5ti 0.5o 32-15%, MgSnO 30.05-10%, CeO 20.03-1.0%, ZnO 0.1-1.5%, MnO 20.03-1.0%; Wherein BaTiO 3, SrTiO 3, MgZr 0.5ti 0.5o 3, MgSnO 3adopt conventional chemical raw material with Solid phase synthesis respectively.
MgZr used in medium of the present invention 0.5ti 0.5o 3following technique is adopted to prepare: by chemical raw material MgO and ZrO of routine 2and TiO 2by 1:0.5:0.5 molar ratio ingredient, put into alumina crucible after ground and mixed is even in 1250 DEG C-1280 DEG C insulations 120 minutes, solid state reaction kinetics MgZr 0.5ti 0.5o 3, ground 200 mesh sieves after cooling, for subsequent use.
MgSnO used in medium of the present invention 3following technique is adopted to prepare: by chemical raw material MgO and SnO of routine 2by 1:1 molar ratio ingredient, put into alumina crucible after ground and mixed is even in 1260 DEG C-1280 DEG C insulations 120 minutes, solid state reaction kinetics MgSnO 3, ground 200 mesh sieves after cooling, for subsequent use.
The present invention adopts conventional high-voltage ceramic condenser medium preparation technology, namely first adopts conventional chemical raw material solid phase method to synthesize BaTiO respectively 3, SrTiO 3, MgZr 0.5ti 0.5o 3, MgSnO 3, then by formula batching, batch ball mill grinding is mixed, after drying, add adhesive granulation, then be pressed into green sheet, then carry out binder removal and sintering in atmosphere, through insulation and naturally, after cooling, acquisition ceramic capacitor dielectric, by electrode on medium.
The formula of above-mentioned ceramic dielectric preferably adopts following three kinds of schemes (percentage by weight):
BaTiO 360-86%,SrTiO 33-22%,MgZr 0.5Ti 0.5O 33-12%,MgSnO 30.5-8%,CeO 20.2-0.6%,
ZnO0.2-0.7% , MnO 2 0.03-1.0%;
BaTiO 365-83%,SrTiO 33-19%,MgZr 0.5Ti 0.5O 34-10%,MgSnO 31-6%,CeO 20.2-0.6%,
ZnO0.2-0.7%, MnO 20.03-1.0%;
BaTiO 370-81%,SrTiO 33-17%,MgZr 0.5Ti 0.5O 33-9%,MgSnO 31-5%,CeO 20.2-0.6%,ZnO0.2-0.7% , MnO 20.03-1.0%。
Compared with prior art, tool has the following advantages in the present invention:
1, the medium of this patent is intermediate sintering temperature (1250 ~ 1270 DEG C) barium strontium based capacitor pottery, greatly can reduce the cost of high voltage ceramic capacitor like this, not leaded and cadmium in the media components of this patent, environmentally safe.
2, the dielectric constant of this medium is high, is more than 5000; Proof voltage is high, and direct current proof voltage can reach more than 18kV/mm, and ac voltage withstanding can reach more than 11kV/mm; Dielectric loss is little, is less than 0.5%.The dielectric constant of this medium is high, can realize miniaturization and the Large Copacity of ceramic capacitor, can reduce costs equally.
3, the percentage of capacitance variation with temperature of this medium is little, meets the requirement of Y5U characteristic.Dielectric loss is less than 0.5%, and in use procedure, stability is good, and fail safe is high.
4, primary raw material employing ceramic capacitor level is pure can produce ceramic dielectric of the present invention.
5, this medium adopts conventional solid phase method ceramic capacitor dielectric preparation technology to be prepared.
Embodiment
The invention will be further described in conjunction with the embodiments now.Table 1 provides the formula of embodiments of the invention totally 9 samples.
The primary raw material of the embodiments of the invention formula of totally 9 samples adopts ceramic capacitor level pure, first adopts conventional chemical raw material solid phase method to synthesize BaTiO respectively in the preparation 3, SrTiO 3, MgZr 0.5ti 0.5o 3, MgSnO 3, then by above-mentioned formula batching, the material distilled water prepared or deionized water are adopted the mixing of planetary ball mill ball milling, material: ball: water=1:3:(0.6 ~ 1.0) (mass ratio), ball milling is after 4 ~ 8 hours, dry to obtain dry mash, in dry mash, add the concentration accounting for its weight 8 ~ 10% is the poly-vinyl alcohol solution of 10%, carry out granulation, mixed rear mistake 40 mesh sieve, under 20 ~ 30Mpa pressure, carry out dry-pressing again become green sheet, then at temperature is 1250 ~ 1270 DEG C, insulation carries out binder removal and sintering in 1 ~ 4 hour, at 780 ~ 870 DEG C, insulation carries out silver ink firing in 15 minutes again, form silver electrode, solder taul again, encapsulate, obtain ceramic capacitor, test its dielectric property, the dielectric property of above-mentioned each formula sample list in table 2, and condenser ceramics proof voltage prepared is as can be seen from Table 2 high, and direct current proof voltage can reach more than 18kV/mm, and ac voltage withstanding can reach more than 11kV/mm, dielectric constant is more than 5000, dielectric loss is less than 0.5%, percentage of capacitance variation with temperature is little, meets the requirement of Y5U characteristic.
The formula of table 1 embodiments of the invention totally 9 samples
The dielectric property of table 2 each formula sample
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.

Claims (7)

1. a Ultrahigh voltage ceramic capacitor medium, described ceramic capacitor dielectric proof voltage is high, and direct current proof voltage can reach more than 18kV/mm, and ac voltage withstanding can reach more than 11kV/mm; Dielectric constant is more than 5000; Dielectric loss is less than 0.5%; Percentage of capacitance variation with temperature is little, meets the requirement of Y5U characteristic, it is characterized in that: the formula composition of described ceramic capacitor calculates according to percentage by weight and is: BaTiO 355-90%, SrTiO 32-25%, MgZr 0.5ti 0.5o 32-15%, MgSnO 30.05-10%, CeO 20.03-1.0%, ZnO 0.1-1.5%, MnO 20.03-1.0%, wherein BaTiO 3, SrTiO 3, MgZr 0.5ti 0.5o 3, MgSnO 3adopt conventional chemical raw material with Solid phase synthesis respectively.
2. a kind of Ultrahigh voltage ceramic capacitor medium as claimed in claim 1, is characterized in that: described MgZr 0.5ti 0.5o 3following technique is adopted to prepare: by chemical raw material MgO and ZrO of routine 2and TiO 2by 1:0.5:0.5 molar ratio ingredient, put into alumina crucible after ground and mixed is even in 1250 DEG C-1280 DEG C insulations 120 minutes, solid state reaction kinetics MgZr 0.5ti 0.5o 3, ground 200 mesh sieves after cooling, for subsequent use.
3. a kind of Ultrahigh voltage ceramic capacitor medium as claimed in claim 1, is characterized in that: described MgSnO 3following technique is adopted to prepare: by chemical raw material MgO and SnO of routine 2by 1:1 molar ratio ingredient, put into alumina crucible after ground and mixed is even in 1260 DEG C-1280 DEG C insulations 120 minutes, solid state reaction kinetics MgSnO 3, ground 200 mesh sieves after cooling, for subsequent use.
4. a kind of Ultrahigh voltage ceramic capacitor medium as claimed in claim 1, is characterized in that: the formula composition of described ceramic capacitor calculates according to percentage by weight and is: BaTiO 360-86%, SrTiO 33-22%, MgZr 0.5ti 0.5o 33-12%, MgSnO 30.5-8%, CeO 20.2-0.6%, ZnO0.2-0.7%, MnO 20.03-1.0%.
5. a kind of Ultrahigh voltage ceramic capacitor medium as claimed in claim 1, is characterized in that: the formula composition of described ceramic capacitor calculates according to percentage by weight and is: BaTiO 365-83%, SrTiO 33-19%, MgZr 0.5ti 0.5o 34-10%, MgSnO 31-6%, CeO 20.2-0.6%, ZnO0.2-0.7%, MnO 20.03-1.0%.
6. a kind of Ultrahigh voltage ceramic capacitor medium as claimed in claim 1, is characterized in that: the formula composition of described ceramic capacitor calculates according to percentage by weight and is: BaTiO 370-81%, SrTiO 33-17%, MgZr 0.5ti 0.5o 33-9%, MgSnO 31-5%, CeO 20.2-0.6%, ZnO0.2-0.7%, MnO 20.03-1.0%.
7. the preparation method of a kind of Ultrahigh voltage ceramic capacitor medium as claimed in claim 1, is characterized in that comprising the steps: first to adopt conventional chemical raw material solid phase method to synthesize BaTiO respectively 3, SrTiO 3, MgZr 0.5ti 0.5o 3, MgSnO 3, then by formula batching, the material distilled water prepared or deionized water are adopted the mixing of planetary ball mill ball milling, mass ratio material: ball: water=1:3:0.6 ~ 1.0, ball milling is after 4 ~ 8 hours, dry to obtain dry mash, in dry mash, add the concentration accounting for its weight 8 ~ 10% is the poly-vinyl alcohol solution of 10%, carry out granulation, mixed rear mistake 40 mesh sieve, under 20 ~ 30Mpa pressure, carry out dry-pressing again become green sheet, then at temperature is 1250 ~ 1270 DEG C, insulation carries out binder removal and sintering in 1 ~ 4 hour, at 780 ~ 870 DEG C, insulation carries out silver ink firing in 15 minutes again, form silver electrode, solder taul again, encapsulate, obtain ceramic capacitor.
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CN104007610B (en) 2014-06-12 2018-03-06 深圳市华星光电技术有限公司 The cleaning method and device of mask
CN104193328B (en) * 2014-09-03 2015-11-18 鞍山信材科技有限公司 A kind of leadless environment-friendly of resistance to high power type ceramic medium material
CN104446442B (en) * 2014-11-28 2016-11-02 黄新友 A kind of microwave dielectric material and preparation method thereof
CN106587988B (en) * 2016-11-14 2019-10-01 江苏大学 A kind of High-temperature stabilization ceramic capacitor dielectric
CN106631003A (en) * 2016-11-14 2017-05-10 江苏大学 High-voltage ceramic capacitor dielectric
CN107151140A (en) * 2017-06-02 2017-09-12 合肥华盖生物科技有限公司 A kind of ceramic capacity medium with low consumption and high pressure resisting and preparation method thereof
CN107285762A (en) * 2017-06-23 2017-10-24 汕头市瑞升电子有限公司 A kind of high pressure low-loss ceramic capacitor dielectric and preparation method thereof
CN108585835B (en) * 2018-06-26 2021-01-29 东莞市瓷谷电子科技有限公司 High-voltage ceramic capacitor medium and preparation method thereof

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CN102568821A (en) * 2012-02-16 2012-07-11 江苏大学 High-voltage ceramic capacitor dielectric with high dielectric constant

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