CN103408301A - Ultrahigh voltage ceramic capacitor medium and preparation method thereof - Google Patents
Ultrahigh voltage ceramic capacitor medium and preparation method thereof Download PDFInfo
- Publication number
- CN103408301A CN103408301A CN201310303560XA CN201310303560A CN103408301A CN 103408301 A CN103408301 A CN 103408301A CN 201310303560X A CN201310303560X A CN 201310303560XA CN 201310303560 A CN201310303560 A CN 201310303560A CN 103408301 A CN103408301 A CN 103408301A
- Authority
- CN
- China
- Prior art keywords
- ceramic capacitor
- mgzr
- mgsno
- batio
- capacitor dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Abstract
The invention relates to the technical field of inorganic non-metallic materials, and especially relates to an ultrahigh voltage ceramic capacitor medium and a preparation method thereof. The formula of the medium comprises 55-90wt% of BaTiO3, 2-25wt% of SrTiO3, 2-15wt% of MgZr0.5Ti0.5O3, 0.05-10wt% of MgSnO3, 0.03-1.0wt% of CeO2, 0.1-1.5wt% of ZnO, and 0.03-1.0wt% of MnO2. A routine ceramic capacitor medium preparation method a capacitor ceramic common chemical raw material are adopted in the invention to prepare the lead-and-cadmium-free ultrahigh voltage ceramic capacitor medium and reduce the sintering temperature of the capacitor ceramic. The medium is suitable for preparing monolithic ceramic capacitors and multilayer tablet ceramic capacitors, substantially reduces the costs of the ceramic capacitors, improves the proof voltage to enlarge the application ranges of the capacitors and does not pollute the environment in the preparation and use processes.
Description
Technical field
The present invention relates to technical field of inorganic nonmetallic materials, refer in particular to a kind of ultra-high voltage ceramic capacitor dielectric and preparation method thereof; It adopts conventional ceramic capacitor dielectric preparation method, utilize condenser ceramics general chemistry raw material, prepare unleaded, without the ultra-high voltage ceramic capacitor dielectric of cadmium, can also reduce the sintering temperature of condenser ceramics, this medium is suitable for preparing monolithic ceramic capacitor and multiple-layer sheet ceramic capacitor, the cost of ceramic condenser can be greatly reduced, proof voltage can be improved simultaneously to enlarge the range of application of ceramic condenser, and free from environmental pollution in preparation and use procedure.
Background technology
The fields such as colour TV, computer, communication, aerospace, guided missile, navigation are high in the urgent need to voltage breakdown, temperature stability good, reliability is high, miniaturization, jumbo ceramic condenser; The sintering temperature of general single-chip high voltage ceramic capacitor dielectric is 1300 ~ 1430 ℃, and ceramic capacitor dielectric sintering temperature of the present invention is 1250 ~ 1270 ℃, can greatly reduce the cost of high voltage ceramic capacitor like this, the not leaded and cadmium of this patent capacitor ceramic dielectric simultaneously, condenser ceramics is free from environmental pollution in preparation and use procedure; In addition, the specific inductivity of condenser ceramics of the present invention is high, can improve like this capacity and the miniaturization of ceramic condenser, the development trend that meets ceramic condenser, equally also can reduce the cost of ceramic condenser, the raising of proof voltage is conducive to enlarge use range and the security of ceramic condenser.
Be generally used for producing in the medium of high voltage ceramic capacitor and contain a certain amount of lead, this not only produce, use and discarded process in human body and environment are worked the mischief, and stability is also had to detrimentally affect.
Chinese periodical " electronic component and material " the 5th phase in 1989 is at " high Jie's high pressure 2B
4Media ceramic " a kind of high-voltage ceramic condenser medium material is disclosed in a literary composition, this dielectric material adopts 97.8wt.%BaTiO
3+ 0.8wt.%Bi
2O
3+ 0.7wt.%Nb
2O
5+ 0.5wt.%CeO
2+ 0.2wt.%MnO
2Formula, with conventional technique, prepare sample, its DIELECTRIC CONSTANT ε=2500 ~ 2600, tg δ=0.5-1.4%, DC break down voltage intensity is 7KV/mm; Though this medium belongs to unleaded dielectric material, it exists resistance to pressure poor, and specific inductivity is too little, and formula forms and is different from this patent.
Chinese patent " a kind of high-voltage ceramic condenser medium " (patent No. ZL00112050.6) is though disclosed capacitor ceramic dielectric belongs to unleaded dielectric material, but specific inductivity is 1860-3300, proof voltage can reach 10kV/mm above (direct current), sintering temperature is 1260-1400 ℃, higher than this patent; Specific inductivity is too little, and far below this patent, and the formula composition is different from this patent.
Chinese periodical " Jiangsu pottery " the 2nd phase in 1999 is at " BaTiO
3Be the high Jie X7R of easy fired capacitor ceramics " a kind of BaTiO is disclosed in a literary composition
3High Jie of middle easy fired meets the capacitor ceramics of X7R characteristic, and the formula of this dielectric material consists of (mass percent): (BaTiO
3+ Nd
2O
3) 89% ~ 92%+Bi
2O
32TiO
27.5 ~ 10%+ low melting glass material 0.8%+50%Mn (NO
3)
2(aqueous solution) 0.205%.Wherein, low melting glass material used is the lead borosilicate low melting glass, and medium is leaded, and does not relate to proof voltage, and specific inductivity is less than 3500, and much smaller than the specific inductivity of this patent, the formula of medium forms and also is different from patent of the present invention.
Chinese periodical " South China Science & Engineering University's journal (natural science edition) " the 3rd phase in 1996 is at " intermediate sintering temperature BaTiO
3Quito mutually ferroelectric porcelain X7R characteristic " inquired into BaTiO in a literary composition
3Base porcelain intermediate sintering temperature mechanism, analyzed intermediate sintering temperature BaTiO
3The composition of base porcelain and uneven texture distribute on the impact of specific inductivity and temperature profile; BaTiO used
3Raw material is to adopt the method for chemical coprecipitation to prepare, and can increase like this cost of ceramic condenser, and this patent BaTiO used
3, SrTiO
3, CaZrO
3Be respectively to adopt conventional chemical feedstocks synthetic with solid phase method, form and be different from this patent, in component, contain a certain amount of lead, and do not relate to proof voltage.
Patent " high Jie's high-performance medium temp. sintered chip multilayer ceramic capacitor porcelain " is separately arranged, and (number of patent application: 97117286.2), it is to adopt the synthetic equivalence of solid phase method and different valency ion to replace simultaneously (Sr
2+, Zr
4+, Sn
4+, Nb
5+) BaTiO
3Sosoloid, add appropriate boron-lead-zinc-copper glass agglutinant, makes porcelain at intermediate sintering temperature, and its performance is: specific inductivity is more than or equal to 16000, and withstand voltage is 700V/mm; Although this patent specific inductivity is high, the material of reporting withstand voltage too poor, be only 700V/mm, and its component contains a certain amount of lead in addition.
Patent " manufacture method of high-voltage ceramic condenser medium " (patent No. 91101958.8) is separately arranged, it adopts unconventional technique to prepare medium, be the flow casting molding film, then the laminated medium body, carry out the multilayered medium body the even pressure of heating under vacuum, punching, then carry out binder removal, burn till and obtain; The shortcoming of this patent be process of preparing complicated, cause cost of goods manifactured to increase, the specific inductivity of manufacturing the high voltage capacitor pottery of gained by its medium formula is 1800-7200, specific inductivity is high, dielectric loss is larger, the withstand voltage height that there is no this patent.
(number of patent application: 97117287.0), it adopts unique formula (weight percent) (BaTiO to also have Chinese patent " high-performance medium temp. sintered chip multilayer ceramic capacitor porcelain "
393 ~ 96%+Nb
2O
50.8 ~ 1.5%+Bi
2O
31.0 ~ 2.2%+ fusing assistant 1.8 ~ 3.5%+ properties-correcting agent 0.25 ~ 1.0%) obtain the condenser ceramics that meets following performance of intermediate sintering temperature: specific inductivity is 3000, and dielectric loss is less than 1.5%, withstand voltage is 860V/mm; The fusing assistant of this patent contains a certain amount of lead, and the proof voltage of this patent is too poor, and specific inductivity is too low simultaneously, much smaller than this patent.
(number of patent application: 200410041863.x), it adopts unique formula (weight percent) (BaTiO to also have Chinese patent " a kind of low temperature sintering high-voltage ceramic condenser medium "
360-90%, SrTiO
31-20%CaZrO
30.1-10%, Nb
2O
50.01-1%, MgO0.01-1%, CeO
20.01-0.8%, ZnO0.01-0.6%, Co
2O
30.03-1%, bismuth lithium sosoloid 0.05-10%) obtain the condenser ceramics that meets following performance of intermediate sintering temperature: specific inductivity is 2000 ~ 3000, proof voltage is more than 6kV/mm, the additive that reduces sintering temperature is bismuth lithium sosoloid, specific inductivity and the proof voltage of this patent are high less than this patent, and the formula of this patent forms and is different from this patent.
Summary of the invention
The purpose of this invention is to provide a kind of ultra-high voltage ceramic capacitor dielectric.
The object of the present invention is achieved like this:
Ultra-high voltage ceramic capacitor dielectric formula forms and comprises (weight percent): BaTiO
355-90%, SrTiO
32-25%, MgZr
0.5Ti
0.5O
32-15%, MgSnO
30.05-10%, CeO
20.03-1.0%, ZnO 0.1-1.5%, MnO
20.03-1.0%; BaTiO wherein
3, SrTiO
3, MgZr
0.5Ti
0.5O
3, MgSnO
3Respectively to adopt conventional chemical feedstocks synthetic with solid phase method.
MgZr used in medium of the present invention
0.5Ti
0.5O
3Adopt following technique to prepare: by conventional chemical feedstocks MgO and ZrO
2And TiO
2Press the 1:0.5:0.5 molar ratio ingredient, put into alumina crucible in 1250 ℃-1280 ℃ insulations 120 minutes after ground and mixed is even, solid state reaction is synthesized MgZr
0.5Ti
0.5O
3, ground 200 mesh sieves after cooling, standby.
MgSnO used in medium of the present invention
3Adopt following technique to prepare: by conventional chemical feedstocks MgO and SnO
2Press the 1:1 molar ratio ingredient, put into alumina crucible in 1260 ℃-1280 ℃ insulations 120 minutes after ground and mixed is even, solid state reaction is synthesized MgSnO
3, ground 200 mesh sieves after cooling, standby.
The present invention adopts conventional high-voltage ceramic condenser medium preparation technology, namely at first adopts conventional chemical feedstocks to synthesize respectively BaTiO with solid phase method
3, SrTiO
3, MgZr
0.5Ti
0.5O
3, MgSnO
3, then by the formula batching, the admixtion ball mill pulverizing is mixed, after drying, add the tackiness agent granulation, then be pressed into green sheet, then in air, carry out binder removal and sintering, after insulation naturally cooling, obtain ceramic capacitor dielectric, on medium by electrode.
The formula of above-mentioned ceramic dielectic preferably adopts following three kinds of schemes (weight percent):
BaTiO
360-86%,SrTiO
33-22%,MgZr
0.5Ti
0.5O
33-12%,MgSnO
30.5-8%,CeO
20.2-0.6%,
ZnO0.2-0.7%?,?MnO
2?0.03-1.0%；
BaTiO
365-83%,SrTiO
33-19%,MgZr
0.5Ti
0.5O
34-10%,MgSnO
31-6%,CeO
20.2-0.6%,
ZnO0.2-0.7%,?MnO
20.03-1.0%；
BaTiO
370-81%,SrTiO
33-17%,MgZr
0.5Ti
0.5O
33-9%,MgSnO
31-5%,CeO
20.2-0.6%,ZnO0.2-0.7%?,?MnO
20.03-1.0%。
The present invention compared with prior art, has following advantage:
1, the medium of this patent is intermediate sintering temperature (1250 ~ 1270 ℃) barium strontium based capacitor pottery, can greatly reduce like this cost of high voltage ceramic capacitor, not leaded and cadmium in the media components of this patent, environmentally safe.
2, the specific inductivity of this medium is high, is more than 5000; Proof voltage is high, more than the direct current proof voltage can reach 18kV/mm, more than ac voltage withstanding can reach 11kV/mm; Dielectric loss is little, is less than 0.5%.The specific inductivity of this medium is high, can realize miniaturization and the large capacity of ceramic condenser, can reduce costs equally.
3, the percentage of capacitance variation with temperature of this medium is little, meets the requirement of Y5U characteristic.Dielectric loss is less than 0.5%, and use procedure performance good stability is safe.
4, main raw material employing ceramic condenser level is pure can produce ceramic dielectic of the present invention.
5, this medium adopts conventional solid phase method ceramic capacitor dielectric preparation technology to be prepared.
Embodiment
The invention will be further described in conjunction with the embodiments now.Table 1 provides the embodiments of the invention formula of totally 9 samples.
The embodiments of the invention main raw material of the formula of totally 9 samples adopt the ceramic condenser level pure, at first adopt in the preparation conventional chemical feedstocks to synthesize respectively BaTiO with solid phase method
3, SrTiO
3, MgZr
0.5Ti
0.5O
3, MgSnO
3, then by above-mentioned formula batching, with distilled water or deionized water, adopt the planetary ball mill ball milling to mix in the material prepared, material: ball: water=1:3:(0.6 ~ 1.0) (mass ratio), after ball milling 4 ~ 8 hours, dry to obtain dry mash, in dry mash, adding the concentration that accounts for its weight 8 ~ 10% is 10% polyvinyl alcohol solution, carry out granulation, mixed rear mistake 40 mesh sieves, under 20 ~ 30Mpa pressure, carry out again dry-pressing and become green sheet, then in temperature, be under 1250 ~ 1270 ℃, to be incubated 1 ~ 4 hour to carry out binder removal and sintering, silver ink firing was carried out in insulation in 15 minutes under 780 ~ 870 ℃ again, form silver electrode, solder taul again, seal, obtain ceramic condenser, test its dielectric properties, above-mentioned dielectric properties of respectively filling a prescription sample are listed in table 2, and prepared condenser ceramics proof voltage is high as can be seen from Table 2, more than the direct current proof voltage can reach 18kV/mm, more than ac voltage withstanding can reach 11kV/mm, specific inductivity is more than 5000, dielectric loss is less than 0.5%, percentage of capacitance variation with temperature is little, meets the requirement of Y5U characteristic.
Table 1 embodiments of the invention are the formula of totally 9 samples
Respectively the fill a prescription dielectric properties of sample of table 2
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (6)
1. ultra-high voltage ceramic capacitor dielectric, described ceramic capacitor dielectric proof voltage is high, more than the direct current proof voltage can reach 18kV/mm, more than ac voltage withstanding can reach 11kV/mm; Specific inductivity is more than 5000; Dielectric loss is less than 0.5%; Percentage of capacitance variation with temperature is little, meets the requirement of Y5U characteristic, it is characterized in that: the formula composition of described ceramic condenser calculates according to weight percent and is: BaTiO
355-90%, SrTiO
32-25%, MgZr
0.5Ti
0.5O
32-15%, MgSnO
30.05-10%, CeO
20.03-1.0%, ZnO 0.1-1.5%, MnO
20.03-1.0%, wherein BaTiO
3, SrTiO
3, MgZr
0.5Ti
0.5O
3, MgSnO
3Respectively to adopt conventional chemical feedstocks synthetic with solid phase method.
2. a kind of ultra-high voltage ceramic capacitor dielectric as claimed in claim 1, is characterized in that: described MgZr
0.5Ti
0.5O
3Adopt following technique to prepare: by conventional chemical feedstocks MgO and ZrO
2And TiO
2Press the 1:0.5:0.5 molar ratio ingredient, put into alumina crucible in 1250 ℃-1280 ℃ insulations 120 minutes after ground and mixed is even, solid state reaction is synthesized MgZr
0.5Ti
0.5O
3, ground 200 mesh sieves after cooling, standby.
3. a kind of ultra-high voltage ceramic capacitor dielectric as claimed in claim 1, is characterized in that: described MgSnO
3Adopt following technique to prepare: by conventional chemical feedstocks MgO and SnO
2Press the 1:1 molar ratio ingredient, put into alumina crucible in 1260 ℃-1280 ℃ insulations 120 minutes after ground and mixed is even, solid state reaction is synthesized MgSnO
3, ground 200 mesh sieves after cooling, standby.
4. a kind of ultra-high voltage ceramic capacitor dielectric as claimed in claim 1 is characterized in that: the formula of described ceramic condenser forms to calculate according to weight percent and is: BaTiO
360-86%, SrTiO
33-22%, MgZr
0.5Ti
0.5O
33-12%, MgSnO
30.5-8%, CeO
20.2-0.6%, ZnO0.2-0.7%, MnO
20.03-1.0%.
5. a kind of ultra-high voltage ceramic capacitor dielectric as claimed in claim 1 is characterized in that: the formula of described ceramic condenser forms to calculate according to weight percent and is: BaTiO
365-83%, SrTiO
33-19%, MgZr
0.5Ti
0.5O
34-10%, MgSnO
31-6%, CeO
20.2-0.6%, ZnO0.2-0.7%, MnO
20.03-1.0%;
A kind of ultra-high voltage ceramic capacitor dielectric as claimed in claim 1 is characterized in that: the formula composition of described ceramic condenser calculates according to weight percent and is: BaTiO
370-81%, SrTiO
33-17%, MgZr
0.5Ti
0.5O
33-9%, MgSnO
31-5%, CeO
20.2-0.6%, ZnO0.2-0.7%, MnO
20.03-1.0%.
6. the preparation method of a kind of ultra-high voltage ceramic capacitor dielectric as claimed in claim 1, is characterized in that comprising the steps: at first to adopt conventional chemical feedstocks to synthesize respectively BaTiO with solid phase method
3, SrTiO
3, MgZr
0.5Ti
0.5O
3, MgSnO
3, then by the formula batching, with distilled water or deionized water, adopt the planetary ball mill ball milling to mix in the material prepared, mass ratio material: ball: water=1:3:0.6 ~ 1.0, after ball milling 4 ~ 8 hours, dry to obtain dry mash, in dry mash, adding the concentration that accounts for its weight 8 ~ 10% is 10% polyvinyl alcohol solution, carry out granulation, mixed rear mistake 40 mesh sieves, under 20 ~ 30Mpa pressure, carry out again dry-pressing and become green sheet, then in temperature, be under 1250 ~ 1270 ℃, to be incubated 1 ~ 4 hour to carry out binder removal and sintering, silver ink firing was carried out in insulation in 15 minutes under 780 ~ 870 ℃ again, form silver electrode, solder taul again, seal, obtain ceramic condenser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310303560.XA CN103408301B (en) | 2013-07-19 | 2013-07-19 | Ultrahigh voltage ceramic capacitor medium and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310303560.XA CN103408301B (en) | 2013-07-19 | 2013-07-19 | Ultrahigh voltage ceramic capacitor medium and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103408301A true CN103408301A (en) | 2013-11-27 |
| CN103408301B CN103408301B (en) | 2015-04-22 |
Family
ID=49601360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310303560.XA Active CN103408301B (en) | 2013-07-19 | 2013-07-19 | Ultrahigh voltage ceramic capacitor medium and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103408301B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104193328A (en) * | 2014-09-03 | 2014-12-10 | 鞍山奇发电子陶瓷科技有限公司 | High-power-resistant type lead-free environment-friendly ceramic dielectric material |
| CN104446442A (en) * | 2014-11-28 | 2015-03-25 | 黄新友 | Microwave medium material and preparation method thereof |
| CN106587988A (en) * | 2016-11-14 | 2017-04-26 | 江苏大学 | High-temperature stable ceramic capacitor dielectric |
| CN106631003A (en) * | 2016-11-14 | 2017-05-10 | 江苏大学 | High-voltage ceramic capacitor dielectric |
| US9724735B2 (en) | 2014-06-12 | 2017-08-08 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Cleaning method and cleaning apparatus for a mask |
| CN107151140A (en) * | 2017-06-02 | 2017-09-12 | 合肥华盖生物科技有限公司 | A kind of ceramic capacity medium with low consumption and high pressure resisting and preparation method thereof |
| CN107285762A (en) * | 2017-06-23 | 2017-10-24 | 汕头市瑞升电子有限公司 | A kind of high pressure low-loss ceramic capacitor dielectric and preparation method thereof |
| CN108585835A (en) * | 2018-06-26 | 2018-09-28 | 东莞市瓷谷电子科技有限公司 | A kind of high-voltage ceramic condenser medium and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1793028A (en) * | 2005-11-21 | 2006-06-28 | 天津大学 | Ceramic capacity medium with low consumption and high pressure resisting and preparation process thereof |
| US20090135544A1 (en) * | 2005-11-14 | 2009-05-28 | James Martin | High Q and low stress capacitor electrode array |
| CN102568821A (en) * | 2012-02-16 | 2012-07-11 | 江苏大学 | High-voltage ceramic capacitor dielectric with high dielectric constant |
-
2013
- 2013-07-19 CN CN201310303560.XA patent/CN103408301B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090135544A1 (en) * | 2005-11-14 | 2009-05-28 | James Martin | High Q and low stress capacitor electrode array |
| CN1793028A (en) * | 2005-11-21 | 2006-06-28 | 天津大学 | Ceramic capacity medium with low consumption and high pressure resisting and preparation process thereof |
| CN102568821A (en) * | 2012-02-16 | 2012-07-11 | 江苏大学 | High-voltage ceramic capacitor dielectric with high dielectric constant |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9724735B2 (en) | 2014-06-12 | 2017-08-08 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Cleaning method and cleaning apparatus for a mask |
| CN104193328A (en) * | 2014-09-03 | 2014-12-10 | 鞍山奇发电子陶瓷科技有限公司 | High-power-resistant type lead-free environment-friendly ceramic dielectric material |
| CN104193328B (en) * | 2014-09-03 | 2015-11-18 | 鞍山信材科技有限公司 | A kind of leadless environment-friendly of resistance to high power type ceramic medium material |
| CN104446442A (en) * | 2014-11-28 | 2015-03-25 | 黄新友 | Microwave medium material and preparation method thereof |
| CN106587988A (en) * | 2016-11-14 | 2017-04-26 | 江苏大学 | High-temperature stable ceramic capacitor dielectric |
| CN106631003A (en) * | 2016-11-14 | 2017-05-10 | 江苏大学 | High-voltage ceramic capacitor dielectric |
| CN106587988B (en) * | 2016-11-14 | 2019-10-01 | 江苏大学 | A kind of High-temperature stabilization ceramic capacitor dielectric |
| CN107151140A (en) * | 2017-06-02 | 2017-09-12 | 合肥华盖生物科技有限公司 | A kind of ceramic capacity medium with low consumption and high pressure resisting and preparation method thereof |
| CN107285762A (en) * | 2017-06-23 | 2017-10-24 | 汕头市瑞升电子有限公司 | A kind of high pressure low-loss ceramic capacitor dielectric and preparation method thereof |
| CN108585835A (en) * | 2018-06-26 | 2018-09-28 | 东莞市瓷谷电子科技有限公司 | A kind of high-voltage ceramic condenser medium and preparation method thereof |
| CN108585835B (en) * | 2018-06-26 | 2021-01-29 | 东莞市瓷谷电子科技有限公司 | High-voltage ceramic capacitor medium and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103408301B (en) | 2015-04-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103408301B (en) | Ultrahigh voltage ceramic capacitor medium and preparation method thereof | |
| CN102176374B (en) | High voltage ceramic capacitor dielectric sintered at low temperature | |
| CN101386534B (en) | High performance middle and low temperature sintered high-voltage ceramic capacitor medium | |
| CN101786866B (en) | Anti-reduction dielectric ceramic material matched with copper inner electrode and sintered under high frequency and low temperature | |
| CN103351161B (en) | Low temperature sintering high voltage ceramic capacitor dielectric | |
| CN103408302B (en) | High permittivity and high temperature stability ceramic capacitor medium and its preparation method | |
| CN102060522B (en) | Dielectric medium of ceramic capacitor and preparation method thereof | |
| CN102101775B (en) | Low-loss high-voltage ceramic capacitor dielectric | |
| CN103664163B (en) | Medium for highly-dielectric grain boundary layer ceramic capacitor and preparation method thereof | |
| CN103508730A (en) | Low temperature sintered giant dielectric ceramic capacitor medium and preparation method thereof | |
| CN107216145A (en) | The dielectric and its preparation technology of a kind of ceramic capacitor | |
| CN102363579A (en) | High performance multilayer ceramic capacitor medium and preparation method thereof | |
| CN103113100B (en) | High-temperature stabilization ceramic capacitor dielectric | |
| CN102030526B (en) | Anti-reduction ceramic dielectric material and preparation method thereof | |
| CN102568821B (en) | High-voltage ceramic capacitor dielectric with high dielectric constant | |
| CN100359612C (en) | Medium low temperature sintered high voltage ceramic capacitor medium | |
| CN102173789A (en) | Preparation method of barium strontium titanate-based energy storage dielectric ceramic | |
| CN103508732B (en) | Low temperature coefficient crystal boundary layer ceramic capacitor medium and preparation method thereof | |
| CN103524127B (en) | High-frequency grain boundary layer ceramic capacitor medium and preparation method | |
| CN106587988B (en) | A kind of High-temperature stabilization ceramic capacitor dielectric | |
| CN102627456B (en) | Low-loss high-voltage ceramic capacitor dielectric | |
| CN107226696A (en) | X7R types BaTiO3Based capacitor ceramic material and preparation method thereof | |
| CN102557672B (en) | Additive and application thereof to reduce sintering temperature of barium-strontium titanate capacitor ceramic | |
| CN106565238B (en) | A kind of low-temperature sintering high-voltage ceramic condenser medium | |
| CN106631003A (en) | High-voltage ceramic capacitor dielectric |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170427 Address after: 515000 Longhu City, Shantou Province, Taishan Road, North Street, Pearl Road, No. 2, No. Patentee after: Shantou Xincheng Electron Technology Co., Ltd. Address before: Zhenjiang City, Jiangsu Province, 212013 Jingkou District Road No. 301 Patentee before: Jiangsu University |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 515000, Pearl Street, Longhu District, Guangdong, Shantou Patentee after: Guangdong Xincheng Technology Industry Co., Ltd Address before: 515000 Longhu City, Shantou Province, Taishan Road, North Street, Pearl Road, No. 2, No. Patentee before: SHANTOU XINCHENG ELECTRONIC TECHNOLOGY Co.,Ltd. |