CN103403508A - Infrared temperature sensor, electronic apparatus, and method for manufacturing infrared temperature sensor - Google Patents
Infrared temperature sensor, electronic apparatus, and method for manufacturing infrared temperature sensor Download PDFInfo
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- CN103403508A CN103403508A CN2011800685037A CN201180068503A CN103403508A CN 103403508 A CN103403508 A CN 103403508A CN 2011800685037 A CN2011800685037 A CN 2011800685037A CN 201180068503 A CN201180068503 A CN 201180068503A CN 103403508 A CN103403508 A CN 103403508A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/041—Mountings in enclosures or in a particular environment
- G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0806—Focusing or collimating elements, e.g. lenses or concave mirrors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H01L2924/30—Technical effects
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- H01L2924/3025—Electromagnetic shielding
Abstract
A metal plate (2) is mounted on a laminated board (1), and a sensor chip (3) and an ASIC (4) are mounted on the metal plate (2). The sensor chip (3) and the ASIC (4) are covered with a metal cap (5) disposed over the metal plate (2). The metal plate (2) is provided with an opening (21), and the electrodes and the ASIC (4) on the laminated board (1) are connected to each other through the opening (21) using a wire.
Description
Technical field
The present invention relates to utilize the infrared temperature sensor of the temperature of this object of infrared detection that object produces.
Background technology
In electronic equipment in recent years, detecting surrounding environment and this testing result is being used for operation and controlling.For example, in air-conditioning, survey people's existence and the place of aiming people existence and carry out temperature controlled operation control.In such operation is controlled, use the sensor device for detection of surrounding environment, in air-conditioning as described above, use and be used to from the radiation heat of the object infrared temperature sensor with noncontact detecting object temperature.
As present infrared temperature sensor, the structure (for example patent documentation 1) that is equipped with sensor element and circuit part on Metallic rod is arranged as everyone knows.Fig. 7 has represented to use the structure of the infrared temperature sensor of Metallic rod.
Infrared temperature sensor shown in Figure 7 is equipped with sensor element 102 and is used for the detectable signal of this sensor element 102 is amplified the circuit part (not shown) of output on Metallic rod 101.Also be provided with the electrode bar 103 that connects this Metallic rod 101 on Metallic rod 101, foregoing circuit section is connected connection and carries out via electrode bar 103 with installation base plate.In addition, the lift-launch face of the sensor element 102 of Metallic rod 101 and circuit part is covered by metal cap 104.Be provided with on metal cap 104 for by ultrared window, at this window, the high light filter 105 that consists of glass or transparent resin of ultrared transmissivity be installed.
In above-mentioned infrared temperature sensor, the maximum reason of using Metallic rod 101 is the error that reply causes because of internal heat.That is, sensor element 102 not only receives the infrared ray that sees through light filter 105, but also receives the infrared ray that the radiation heat because of sensor internal produces.At this moment, if the temperature of sensor internal is identical with the temperature of sensor element 102, the impact of sensor internal temperature is cancelled out each other and can not be produced error.On the other hand, if the temperature of sensor internal is different from the temperature of sensor element 102, the temperature of sensor internal exists as error, can not accurately survey the temperature of determination object thing.
Therefore, in present infrared temperature sensor, be made as and use the high Metallic rod of thermal conductivity and the packaging structure of metal cap, make the temperature of sensor internal become even.
In addition, for example disclose the infrared temperature sensor of the structure of not using Metallic rod in patent documentation 2.Fig. 8 represents not use the structure of the infrared temperature sensor of Metallic rod.
Infrared temperature sensor shown in Figure 8 is directly to carry sensor chip 202 on supporting substrates 201, and the distribution of supporting substrates 201 is connected with sensor chip carries out the structure that electric wire connects.In addition, even in above-mentioned infrared temperature sensor, sensor chip 202 is also covered by metal cap 203.
Patent documentation 1: Japan's publication communique " Unexamined Patent 6-137935 communique (on May 20th, 1994 is open) "
Patent documentation 2: Japan's public table patent gazette " special table 2007-503586 communique (public table on February 22nd, 2007) "
But prior art as described above has following problem.
At first, in the structure that uses Metallic rod, the parts expense of Metallic rod itself is high.Metallic rod has for take out the electrode bar of sensor signal to package outside, this electrode bar use low-melting glass etc. and the insulation of bar main body, and therefore, complex structure and parts expense uprise.In addition, the installation of Metallic rod need to be inserted metal bar and the operation by manually welding of the through hole of installation base plate, and the assembling processing charges also uprises.
On the other hand, in not using the structure of Metallic rod, in the situation that take the base material of supporting substrates as general resin base material, poor thermal conductivity, therefore, be easy to produce temperature difference between sensor chip and cap.Therefore, inferior in the situation that peripheral temperature changes,, due to the inboard infra-red-emitting of encapsulation, produce the problem of sensor output change.
In addition, in not using the structure of Metallic rod,, take the base material of supporting substrates as the good ceramic base material of thermal conductivity, can remove the problems referred to above.But in this case, the price of ceramic substrate is very high, and it is unfavorable to become aspect cost.
Summary of the invention
The present application is founded in view of above-mentioned problem, its purpose is, a kind of infrared temperature sensor is provided, and its parts expense and assembling processing charges are few, cheap, and have the anti-output mobility to variation of ambient temperature with the existing structure same degree of using Metallic rod.
In order to solve above-mentioned problem, infrared temperature sensor of the present invention is characterised in that to have: installation base plate; Sheet metal, it is installed on described installation base plate; Sensor chip, it is equipped on described sheet metal, and receives the detection infrared ray; Circuit part, it is equipped on described sheet metal, and amplifies the detectable signal of described sensor chip; Metal cap, it covers on described sheet metal, and covers described sensor chip and described circuit part, is provided with peristome on described sheet metal, the electrode on described installation base plate be connected circuit part and carry out electric wire by described peristome and connect.
According to above-mentioned structure, described sensor chip and described circuit part are equipped on described sheet metal, and cover from the upper side metal cap.That is, described sensor becomes described sensor chip and described circuit part is accommodated in structure in the encapsulation that consists of described sheet metal and described metal cap.Because the thermal conductivity of described sheet metal and described metal cap is high, therefore, described encapsulation has the function of the temperature that keeps equably sensor internal, and can keep higher anti-output mobility to variation of ambient temperature.
In addition, be provided with peristome on described sheet metal, the electrode on described installation base plate be connected circuit part and carry out electric wire by described peristome and connect.The wire-bonds of this described installation base plate and described circuit part can be applied common COB(Chip On Board) field engineering, therefore, with the prior art of the sensor of installing and using Metallic rod, compare, can decrease assembling processing charges.
In addition, the manufacture method of infrared temperature sensor of the present invention is characterised in that to have: the sheet metal that is provided with peristome is installed on installation base plate operation; Carry the operation of the circuit part that receives the detectable signal of surveying ultrared sensor chip and amplifying described sensor chip on described sheet metal; With the electrode on described installation base plate be connected the peristome of circuit part by described sheet metal and carry out the operation that electric wire connects; Cover on described sheet metal and cover described sensor chip and the metal cap of described circuit part and the operation that encapsulates.
According to above-mentioned structure, but manufacture component expense and assembling processing charges are few, cheap, and have the infrared temperature sensor with the anti-output mobility to variation of ambient temperature of the existing structure same degree of using Metallic rod.
Infrared temperature sensor of the present invention is for being accommodated in described sensor chip and described circuit part the structure in the encapsulation that consists of described sheet metal and described metal cap.Described encapsulation has higher high-temperature electric conduction, therefore, has the function of the temperature that keeps equably sensor internal.Therefore, described infrared temperature sensor has the effect of the higher anti-output mobility to variation of ambient temperature.
In addition, be provided with peristome on described sheet metal, the electrode on described installation base plate be connected circuit part and carry out electric wire by described peristome and connect.The wire-bonds of this described installation base plate and described circuit part can be applied common COB field engineering.Therefore, with the prior art of the sensor of installing and using Metallic rod, compare, described infrared temperature sensor have can decrease the effect of assembling processing charges.
Description of drawings
Fig. 1 means the figure of one embodiment of the present invention, means the stereographic map of the structure of infrared temperature sensor;
Fig. 2 means the stereographic map of the shape of the sheet metal that uses in the infrared temperature sensor of Fig. 1;
Fig. 3 means the stereographic map of installation method of sheet metal of the infrared temperature sensor of Fig. 1;
Fig. 4 means the sectional view of the seal construction of the metal cap of infrared temperature sensor of Fig. 1 and lens;
Fig. 5 means the stereographic map of installation method of metal cap of the infrared temperature sensor of Fig. 1;
Fig. 6 means the curve map of the anti-output mobility to variation of ambient temperature of infrared temperature sensor;
Fig. 7 means the sectional view of the structure of existing infrared temperature sensor;
Fig. 8 means the sectional view of the structure of existing infrared temperature sensor.
Symbol description
1 multilayer board (installation base plate)
2 sheet metals
3 sensor chips
4 ASIC(circuit parts)
5 metal caps
6 inboard caps
7 lens
21 peristomes
22 cap location projections
Embodiment
Below, with reference to accompanying drawing, embodiments of the present invention are elaborated.Fig. 1 means the stereographic map of structure of the infrared temperature sensor of present embodiment.In Fig. 1, for the inner structure of understanding infrared temperature sensor with a part as section.The infrared temperature sensor of present embodiment can be used in and detect surrounding environment and this testing result is used for the electronic equipment (air-conditioning etc.) that operation is controlled.
Infrared temperature sensor shown in Figure 1 possesses: multilayer board 1, sheet metal 2, sensor chip 3, ASIC(Application Specific Integrated Circuit) 4, metal cap 5, inboard cap 6 and lens 7 and form.Multilayer board 1 is the installation base plate for sensor installation chip 3 and ASIC4, and it has the wiring layer that is patterned into the regulation shape.Sensor chip 3 is to receive to survey ultrared element, and ASIC4 amplifies the circuit part of output for the detectable signal with sensor chip 3.
Be stamped the structure that is formed by metal cap 5, inboard cap 6 and lens 7 on sensor chip 3 and ASIC4.Lens 7 embed and are formed at the top depressed part of inboard cap 6, and then from lens 7, are stamped metal cap 5.Metal cap 5 is accommodated in its inboard fully with inboard cap 6 and lens 7, and its lower end and sheet metal 2 join.In addition, be provided with on metal cap 5 for infrared ray being taken into the window portion of sensor internal, lens 7 be disposed at this window portion under.
In addition, sheet metal 2 utilizes the bonding agent sealing with gap and the lens 7 of metal cap 5 with metal cap 5 gaps, thereby sensor internal is airtight.Certainly,, if this is due to that sensor internal is not airtight, because of the discrepancy of air, be difficult to keep the temperature of sensor internal.But the infrared transmitting parts that are installed on the window portion of metal cap 5 may not be lens,, if do not need above-mentioned light-focusing function, can be also glass plate or transparent resin plate etc.
In the infrared temperature sensor of said structure, by forming the packaging structure that is formed by sheet metal 2 and metal cap 5, and at this encapsulation internal configurations sensor chip 3, ASIC4.Therefore, can keep equably temperature in sensor with the sensor same degree ground of the existing structure that uses Metallic rod.That is, can provide and have and existing infrared temperature sensor of constructing the anti-output mobility to variation of ambient temperature of same degree.
The material of sheet metal 2 is not particularly limited, but can particularly preferably use the good iron of thermal conductivity, copper, aluminium etc.In addition, in order to ensure preventing, get rusty and weldability described later, sheet metal 2 also can be implemented surface coating (for example nickel plating).
In addition, inboard cap 6 is formed by resin.The main purpose that inboard cap 6 is set is to change sharp along with the variation of external temperature for fear of temperature in sensor.As mentioned above,, due to when producing during non-uniform temperature and detect error in sensor, therefore, in above-mentioned infrared temperature sensor, utilize the encapsulating structure that has sheet metal 2 and metal cap 5 to form to keep equably temperature in sensor.But if only improve the thermal conductivity of encapsulation, in the situation that externally temperature sharply changes with descending, in sensor, temperature also changes sharp., about temperature in sensor, preferably do not produce this temperature sharply.Therefore, in above-mentioned infrared temperature sensor, the inboard cap 6 that is formed by resin is set, relaxes the variation of external temperature, avoid the sharply variation of temperature in sensor.
The assembling sequence of above-mentioned infrared temperature sensor then, is described.At first, by welding, sheet metal 2 is installed on multilayer board 1.In this welding sequence, can use betwixt and be situated between and be provided with under the state of soldering paste, sheet metal 2 is loaded on multilayer board 1, by the common welding method in the field engineering of the such electronic component of reflux heating.
Like this,, for sheet metal 2 is installed on multilayer board 1 by welding, be pre-formed welding and used composition surface (with reference to Fig. 3) on multilayer board 1.At least impartial position, left and right is corresponding with four positions at the edge of sheet metal 2 and arrange up and down at the center from sheet metal 2 with composition surface in welding.Welding also can be located at the position corresponding with four angles of the sheet metal 2 of installing or four edges with composition surface.In addition, also preferably at position corresponding to the substantial middle with sheet metal 2, form welding and use composition surface.This is in order to prevent near the central portion of sheet metal 2, produces gap and produce deflection on sheet metal 2 between sheet metal 2 and multilayer board 1.Can be a position with the composition surface at the central corresponding position of sheet metal 2, can be also a plurality of positions.
Then, carry sensor chip 3, ASIC4 on sheet metal 2.Sensor chip 3, ASIC4 can utilize bonding agent to be installed on sheet metal 2.Then, connect (being connected of sensor chip 3 and ASIC4 and being connected of ASIC4 and multilayer board 1) by electric wire in conjunction with carrying out distribution.As mentioned above, be provided with the peristome 21 that is connected with the ASIC4 electric wire for multilayer board 1 on sheet metal 2.That is, be installed at sheet metal 2 under the state of multilayer board 1, the connecting pad of multilayer board 1 side (electrode) be disposed at the zone of peristome 21.Therefore, can carry out multilayer board 1 by peristome 21 is combined with the electric wire of ASIC4.This multilayer board 1 is combined with the electric wire of ASIC4 and can be applied common COB(Chip On Board) field engineering, therefore, with the prior art of the sensor of installing and using Metallic rod, compare, can decrease assembling processing charges.
, for metal cap 5, inboard cap 6 and lens 7, before to multilayer board 1, installing, can carry out the assembling of these parts.At first, the depressed part on be formed at inboard cap 6 embeds lens 7, and then from lens 7, covers metal cap 5.Lens 7 need to carry out the assembling of high precision contraposition in the mode that its focus arrives on sensor chip, but, by be provided for embedding the depressed part of lens 7 on inboard cap 6, easily carry out this contraposition.
The periphery of lens 7 contacts with metal cap 5 or approaches and configures, and metal cap 5 is sealed by bonding agent with the gap of lens 7.At this moment, bonding agent is preferably filled roughly whole (with reference to the Fig. 4) in the gap of metal cap 5 and lens 7.This has and not only improves leakproofness, and improves the meaning of the thermal conductivity between metal cap 5 and lens 7.
The assembling thing of metal cap 5, inboard cap 6 and lens 7 covers on the sheet metal 2 of the multilayer board 1 of the installation of sensor chip 3 and ASIC4, and with sensor package.At this moment, metal cap 5 and sheet metal 2 are by the bonding agent sealing, and the inside of infrared temperature sensor is airtight., in order easily to carry out the installation of above-mentioned assembling thing, the cap location also can be set use projection 22(with reference to Fig. 5 on sheet metal 2).Four angles or the four edges of sheet metal 2 preferably are located in cap location with projection 22.Thus, when metal cap 5 is installed on sheet metal 2, can easily carry out high-precision location.
Fig. 6 represents the anti-output mobility to variation of ambient temperature of the infrared temperature sensor of present embodiment.Fig. 6 means the curve map of the change of the output temperature of (the needed time of temperature change is about 100s) when the environment temperature that makes sensor rises to 35 ℃ from 25 ℃, and transverse axis represents the time, and the longitudinal axis represents sensor output temperature error.In addition, in Fig. 6, except the sensor of present embodiment, also represent the measurement result of comparative example 1,2 sensor.At this, comparative example 1 is corresponding with the existing structure of patent documentation 1, is to carry the structure of sensor chip on installation base plate via Metallic rod.In addition, comparative example 2 is identical with the present invention, is to carry sensor chip via sheet metal on installation base plate, but does not carry out resin fill between lens and metal cap and produce the structure in gap.
At first, although the sharply variation of environment temperature, the error of the output temperature of the sensor of present embodiment is roughly ± 0.5 ℃ in, in addition, the recovery of the error that produces after temperature variation around is also very fast.On the other hand, in the sensor of comparative example 1, maximum error is near 0.8 ℃,, until temperature variation arrives through the time about 300s after starting, produces the error more than 0.5 ℃.Hence one can see that,, although the sensor of present embodiment is the structure that does not use the cheapness of Metallic rod, also has and the existing sensor same degree of using Metallic rod or the above anti-output mobility to variation of ambient temperature.
In addition, in the sensor of comparative example 2, produce the maximum error near 2.0 ℃, until error convergence becomes 0.5 ℃ of left and right to have the time of 700s left and right.Hence one can see that,, even improve thermal diffusivity via sheet metal between installation base plate and sensor chip,, if there is no the leakproofness in sensor, also do not have anti-output mobility.
In infrared temperature sensor of the present invention, preferable alloy plate 2 becomes the structure that is connected with GND current potential on multilayer board 1 and utilizes conductive adhesive to be electrically connected to sheet metal 2 and metal cap 5.Sensor chip 3 and ASIC4 are the devices of sensitivity that is easy to be subject to the impact of radionoise, but, by being made as said structure, can have the shield effectiveness that makes the encapsulation blocking radionoise that consists of sheet metal 2 and metal cap 5.In addition,, if said structure is connected at least one with composition surface of the welding on multilayer board 1 with GND current potential supply distribution, can easily realize.
As mentioned above, infrared temperature sensor of the present invention is characterised in that to have: installation base plate; Sheet metal, it is installed on described installation base plate; Sensor chip, it is equipped on described sheet metal, and receives the detection infrared ray; Circuit part, it is equipped on described sheet metal, and amplifies the detectable signal of described sensor chip; Metal cap, it covers on described sheet metal, and covers described sensor chip and described circuit part, is provided with peristome on described sheet metal, the electrode on described installation base plate be connected circuit part and carry out electric wire by described peristome and connect.
According to above-mentioned structure, described sensor chip and described circuit part are equipped on described sheet metal, and cover from the upper side metal cap.That is, described sensor becomes described sensor chip and described circuit part is accommodated in structure in the encapsulation that consists of described sheet metal and described metal cap.Because the thermal conductivity of described sheet metal and described metal cap is high, therefore, described encapsulation has the function of the temperature that keeps equably sensor internal, and can keep higher anti-output mobility to variation of ambient temperature.
In addition, be provided with peristome on described sheet metal, the electrode on described installation base plate be connected circuit part and carry out electric wire by described peristome and connect.The wire-bonds of this described installation base plate and described circuit part can be applied common COB(Chip On Board) field engineering, therefore, with the prior art of the sensor of installing and using Metallic rod, compare, can decrease assembling processing charges.
In addition, in above-mentioned infrared temperature sensor, described sheet metal is connected with the GND current potential on described installation base plate, and described metal cap can be made the structure that is electrically connected to described sheet metal.
According to above-mentioned structure, the encapsulation that consists of described sheet metal and described metal cap can have the shield effectiveness that interdicts radionoise.
In addition, in above-mentioned infrared temperature sensor, can be made as following structure, namely, described sheet metal by welded and installed in described installation base plate, the welding that is formed at described installation base plate with composition surface be arranged at four angles of the described sheet metal of installing or four edges corresponding position and with the central corresponding position of sheet metal.
, according to above-mentioned structure, utilize to be located at four angles of described sheet metal or the welding of four edges corresponding position position, with composition surface, sheet metal can be installed securely dislocation-free.The composition surface with the central corresponding position of sheet metal is located in utilization, can prevent from producing gap between described sheet metal and described installation base plate and produce deflection on described sheet metal.
In addition, in above-mentioned infrared temperature sensor, described sheet metal can be made as and be implemented the structure that is useful on the surface coating of guaranteeing weldability.Thus, can improve the reliability of welded and installed.
In addition, in above-mentioned infrared temperature sensor, can be made as and be provided with on described sheet metal be used to the structure of the cap location of locating described metal cap with projection.Thus, when described metal cap is installed on described sheet metal, can easily carry out high-precision location.
In addition, in above-mentioned infrared temperature sensor, can be made as the structure that is provided with resinous inboard cap in the inboard of described metal cap.
According to above-mentioned structure, can avoid temperature in sensor sharply to change along with the variation of ambient temperature, can improve the anti-output mobility of sensor to variation of ambient temperature.
In addition, in above-mentioned infrared temperature sensor, can be made as following structure, namely, be provided with on described metal cap for infrared ray being taken into the window portion of sensor internal, disposing under described window portion the lens of the infrared light concentrating by described window portion on sensor chip, described inboard cap has be used to the depressed part that embeds described lens.
, according to above-mentioned structure,, by be provided for embedding the depressed part of described lens on described inboard cap, easily carry out be used to contraposition corresponding on the focus that makes lens and sensor chip.
In addition, in above-mentioned infrared temperature sensor, can be made as following structure, that is, the periphery of described lens contacts with described metal cap or approaches and configures, and the gap-fill of described lens and described metal cap has bonding agent.Thus, can improve the thermal conductivity between described metal cap and described lens, and realize the homogenising of temperature in sensor.
In addition, the manufacture method of infrared temperature sensor of the present invention is characterised in that to have: the sheet metal that is provided with peristome is installed on installation base plate operation; Carry the operation of the circuit part that receives the detectable signal of surveying ultrared sensor chip and amplifying described sensor chip on described sheet metal; With the electrode on described installation base plate be connected the peristome of circuit part by described sheet metal and carry out the operation that electric wire connects; Cover on described sheet metal and cover described sensor chip and the metal cap of described circuit part and the operation that encapsulates.
According to above-mentioned structure, but manufacture component expense and assembling processing charges are few, cheap, and have the infrared temperature sensor with the anti-output mobility to variation of ambient temperature of the existing structure same degree of using Metallic rod.
The present invention is not limited to each above-mentioned embodiment, can carry out various changes in the scope shown in claims of the present invention, make the technological means appropriate combination that is disclosed in respectively different embodiments and the embodiment that obtains also is contained in technical scope of the present invention.
Utilizability on industry
The present invention can be used in and detect surrounding environment and this testing result is used for the electronic equipment (air-conditioning etc.) that operation is controlled.
Claims (10)
1. infrared temperature sensor is characterized in that having:
Installation base plate;
Sheet metal, it is installed on described installation base plate;
Sensor chip, it is equipped on described sheet metal, and receives the detection infrared ray;
Circuit part, it is equipped on described sheet metal, and amplifies the detectable signal of described sensor chip;
Metal cap, it covers on described sheet metal, and covers described sensor chip and described circuit part,
Be provided with peristome on described sheet metal, the electrode on described installation base plate be connected circuit part and carry out electric wire by described peristome and connect.
2. infrared temperature sensor as claimed in claim 1, is characterized in that,
Described sheet metal is connected with the GND current potential on described installation base plate,
Described metal cap is electrically connected to described sheet metal.
3. infrared temperature sensor as claimed in claim 1 or 2, is characterized in that,
Described sheet metal by welded and installed in described installation base plate,
The welding that is formed at described installation base plate is arranged on the position corresponding with four angles of the described sheet metal of installing or four edges and the position corresponding with the central authorities of sheet metal with composition surface.
4. infrared temperature sensor as claimed in claim 3, is characterized in that, described sheet metal is implemented and is useful on the surface coating of guaranteeing weldability.
5. infrared temperature sensor as described in any one in claim 1～4, is characterized in that, at described sheet metal, is provided be used to the cap location projection of locating described metal cap.
6. infrared temperature sensor as described in any one in claim 1～5, is characterized in that, is provided with resinous inboard cap in the inboard of described metal cap.
7. infrared temperature sensor as claimed in claim 6, is characterized in that,
Be provided with on described metal cap for infrared ray being taken into the window portion of sensor internal, disposing under described window portion the lens of the infrared light concentrating by described window portion on sensor chip,
Described inboard cap has be used to the depressed part that embeds described lens.
8. infrared temperature sensor as claimed in claim 7, is characterized in that, the periphery of described lens contacts with described metal cap or approaches and configures, and the gap-fill of described lens and described metal cap has bonding agent.
9. an electronic equipment, is characterized in that, is equipped with the described infrared temperature sensor of any one in described claim 1～8.
10. the manufacture method of an infrared temperature sensor, is characterized in that, has:
The operation of the sheet metal that is provided with peristome is installed on installation base plate;
Carry the operation of the circuit part that receives the detectable signal of surveying ultrared sensor chip and amplifying described sensor chip on described sheet metal;
With the electrode on described installation base plate be connected the peristome of circuit part by described sheet metal and carry out the operation that electric wire connects;
Cover on described sheet metal and cover described sensor chip and the metal cap of described circuit part and the operation that encapsulates.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-045689 | 2011-03-02 | ||
| JP2011045689A JP5287906B2 (en) | 2011-03-02 | 2011-03-02 | Infrared temperature sensor, electronic device, and method of manufacturing infrared temperature sensor |
| PCT/JP2011/056258 WO2012117568A1 (en) | 2011-03-02 | 2011-03-16 | Infrared temperature sensor, electronic apparatus, and method for manufacturing infrared temperature sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103403508A true CN103403508A (en) | 2013-11-20 |
| CN103403508B CN103403508B (en) | 2016-11-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180068503.7A Active CN103403508B (en) | 2011-03-02 | 2011-03-16 | The manufacture method of infrared temperature sensor, electronic equipment and infrared temperature sensor |
Country Status (3)
| Country | Link |
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| JP (1) | JP5287906B2 (en) |
| CN (1) | CN103403508B (en) |
| WO (1) | WO2012117568A1 (en) |
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| CN104776916A (en) * | 2014-01-15 | 2015-07-15 | 欧姆龙株式会社 | Infrared sensor |
| CN104776912A (en) * | 2014-01-15 | 2015-07-15 | 欧姆龙株式会社 | Cover of infrared detector and infrared detector |
| CN107407603A (en) * | 2015-03-25 | 2017-11-28 | 世美特株式会社 | Infrared temperature sensor and the device using infrared temperature sensor |
| WO2022166589A1 (en) * | 2021-02-05 | 2022-08-11 | 芯海科技（深圳）股份有限公司 | Infrared temperature sensor and electronic device |
| CN115655478A (en) * | 2022-12-23 | 2023-01-31 | 苏州森斯缔夫传感科技有限公司 | Infrared sensor, temperature fluctuation resistance method and temperature measuring instrument |
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| JP5333641B2 (en) * | 2012-10-29 | 2013-11-06 | オムロン株式会社 | Infrared temperature sensor, electronic device, and method of manufacturing infrared temperature sensor |
| JP6469353B2 (en) * | 2014-03-31 | 2019-02-13 | 旭化成エレクトロニクス株式会社 | Infrared sensor |
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| WO2020240739A1 (en) * | 2019-05-29 | 2020-12-03 | 三菱電機株式会社 | To-can optical module |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP5287906B2 (en) | 2013-09-11 |
| JP2012181157A (en) | 2012-09-20 |
| WO2012117568A1 (en) | 2012-09-07 |
| CN103403508B (en) | 2016-11-09 |
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