CN103400864B - GaN transverse Schottky diode based on polarization doping - Google Patents
GaN transverse Schottky diode based on polarization doping Download PDFInfo
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Abstract
The invention discloses a kind of GaN transverse Schottky diode based on polarization doping, belong to field of semiconductor devices.The present invention includes substrate, cushion and GaN layer from bottom to top, GaN layer is provided with graded component AlGaN layer and the ohmic contact metal layer of graded component AlGaN layer transversary formation and Schottky contact metal layer, the Al component non-uniform Distribution of described graded component AlGaN layer.This diode is compared with the diode of common HEMT material structure, and active area uses graded component AlGaN, reduces owing to electronics assembles the integrity problem caused；Compared with the GaN Schottky diode that silicon doping forms N/N+ high-concentration and low-concentration structure, the series resistance of the present invention is less；Compared with GaAs Schottky diode, in the case of equal schottky junction area, bigger input power can be born, and heat dispersion strengthens；Compared with the diode of common HEMT material structure, electric capacity of the present invention non-linear higher, it is more suitable for as transfiguration device, and device architecture is simple, it is easy to accomplish.
Description
Technical field
The invention belongs to field of semiconductor devices.
Background technology
Terahertz (THz) ripple refers to frequency electromagnetic wave in the range of 0.1-10THz, wherein 1THz=1000GHz.THz ripple occupies the most special position in electromagnetic spectrum, and THz technology is the very important intersection Disciplinary Frontiers that International Technology circle is generally acknowledged.
At THz wave band, Schottky diode has room temperature work, it is easy to the advantage such as integrated, is applied to the detection of terahertz wave band and for the generation of THz source.
The Schottky diode being applied to terahertz wave band at present mostly is GaAs (GaAs) base, due to the mobility of gallium nitride (GaN) material relative to GaAs material from the point of view of, mobility is on the low side, Schottky diode based on GaN research is less, but owing to GaN material band gap is 3.4eV, relative to GaAs material band gap 1.4eV, band gap is wider, GaN has higher breakdown voltage, relative to GaAs material, there is more preferable heat-sinking capability due to GaN material again, therefore GaN base Schottky diode can bear higher input power relative to GaAs based schottky diode, and heat dispersion is more preferable.GaN base Schottky diode is placed on the first order of Terahertz frequency multiplier chain as frequency multiplication source.
There is the GaN Schottky diode forming N-/N+ high-concentration and low-concentration doped structure based on silicon doping at present, but the type Schottky diode series resistance is relatively big, reduces the operating frequency of diode；Also having Schottky diode based on HEMT (HEMT) material structure, mostly be vertical structure, the type Schottky diode to realize the transmission from vertical and horizontal due to electronics, and the transition time is longer.The type diode is strong due to two-dimensional electron gas (2DEG) aggregation simultaneously, will cause integrity problem.
Summary of the invention
It is an object of the invention to provide a kind of GaN transverse Schottky diode based on polarization doping, this diode can reduce the electronics aggregation of active area, weakens owing to electronics assembles the integrity problem caused.
For solving above-mentioned technical problem, the technical solution used in the present invention is: a kind of GaN transverse Schottky diode based on polarization doping, include substrate, cushion and GaN layer from bottom to top, GaN layer is provided with graded component AlGaN layer and the ohmic contact metal layer of graded component AlGaN layer transversary formation and Schottky contact metal layer, ohmic contact metal layer and Schottky contact metal layer are positioned at the both sides of graded component AlGaN layer, and the Al component of described graded component AlGaN layer is non-uniform Distribution.
The Al component of described graded component AlGaN layer is gradient to 30% from top to bottom or from bottom to top by 0.
Described substrate is sapphire, Si, SiC or GaN.
Described cushion is AlN.
There is silicon nitride passivation graded component AlGaN layer is grown above.
The technological progress using technique scheme to obtain is:
1, this diode uses transversary, and the electronics of active area does not has longitudinal transmitting procedure, shortens the transition time of electronics；
2, compared with the diode of common HEMT material structure, active area of the present invention uses graded component AlGaN, reduces owing to electronics assembles the integrity problem caused；
3, compared with the GaN Schottky diode that silicon doping forms N-/N+ high-concentration and low-concentration structure, the series resistance of the present invention is less；
4, compared with GaAs Schottky diode, in the case of equal schottky junction area, the present invention can bear bigger input power, and heat dispersion strengthens；
5, compared with the diode of common HEMT material structure, electric capacity of the present invention non-linear higher, it is more suitable for as transfiguration device；
6, device architecture of the present invention is simple, it is easy to accomplish.
Accompanying drawing explanation
Fig. 1 show the structural front view of the present invention；
Fig. 2 show the top view of Fig. 1；
Wherein, 101, ohmic contact metal layer, 102, graded component AlGaN layer, 103, Schottky contact metal layer, 104, Schottky contacts lead-in wire electrode, 105, GaN layer, 106, cushion, 107, substrate, 108, silicon nitride passivation.
Detailed description of the invention
Understand as shown in Figure 1, GaN transverse Schottky diode based on polarization doping, include substrate 107, cushion 106 and GaN layer 105 from bottom to top, GaN layer 105 is provided with graded component AlGaN layer 102 and the ohmic contact metal layer 101 of AlGaN layer 102 transversary formation and Schottky contact metal layer 103, the Al component non-uniform Distribution of described graded component AlGaN layer 102；The Al component of described graded component AlGaN layer 102 (or from bottom to top) from top to bottom is gradient to 30% by 0；Described substrate 107 is sapphire, Si, SiC or GaN；Described cushion 106 is AlN.
Substrate 107 is in the bottom of the present invention, in order to support whole Schottky diode；Substrate 107 has epitaxially grown AlN cushion 106, AlN cushion 106 has epitaxially grown GaN layer 105, GaN layer 105 has the AlGaN layer 102 of epitaxially grown graded component, graded component AlGaN layer 102 is due to content gradually variational, form natural polarization doping, electron gas is evenly distributed on whole graded component AlGaN layer 102 and GaN layer 105 and graded component AlGaN layer 102 interface, defines the two-dimensional electron gas of similar many raceway grooves.It is ohmic contact metal layer 101 in 102 layers of left side of graded component AlGaN, ohmic contact metal layer 101 is from bottom to top for being followed successively by Ti, Al, Ni, Au, it is Schottky contact metal layer 103 on the right side of graded component AlGaN layer 102, for Schottky contacts lead-in wire electrode 104 on the right side of Schottky contact metal layer 103.
The gradual manner of the Al component of described graded component AlGaN layer 102 has a variety of, such as linear gradient, non-linear gradual change (such as exponential fade, constant gradient gradual change etc., non-constant gradient gradual change etc.) etc..Different gradual manner can produce different technique effects, and those skilled in the art can select suitable gradual manner according to actual needs.
Schottky diode of the present invention can be realized by following semiconductor technology:
The first step, mesa etch: mesa region is graded component AlGaN layer 102 and part GaN layer 105, by the method for dry etching, etch away the dual-side part of the GaN layer 105 of AlGaN layer 102 and top section, form the table top between graded component AlGaN layer 102 and GaN layer 105, as shown in Figure 1.
Second step, making Ohmic contact: 101 regions as depicted in figs. 1 and 2, ohmic contact metal layer 101 is made by evaporated metal, ohmic contact metal layer 101 is followed successively by Ti, Al, Ni, Au from bottom to top, by alloy, ohmic contact metal layer 101 and graded component AlGaN layer 102 form Ohmic contact.
3rd step, makes Schottky contacts: 103 regions as depicted in figs. 1 and 2, by evaporated metal Ni, Au, metal and graded component AlGaN layer 102 form Schottky contact metal layer 103.
4th step, makes Schottky contacts lead-in wire electrode 104: the position of Schottky contacts lead-in wire electrode 104 is as depicted in figs. 1 and 2.
In order to improve the reliability of Schottky diode, above graded component AlGaN layer 102, protected the graded component AlGaN layer 102 of active area by grown silicon nitride passivation layer 108.
The diode of the present invention uses transversary, and the electronics of such active area does not just have longitudinal transmitting procedure, shortens the transition time of electronics；Compared with the diode of common HEMT material structure, the active area of the present invention uses the AlGaN of graded component, reduces owing to electronics assembles the integrity problem caused in diode, and electric capacity of the present invention is non-linear higher, is more suitable for as transfiguration device；Compared with the GaN Schottky diode that silicon doping forms N-/N+ high-concentration and low-concentration structure, the series resistance of the present invention is less；Compared with GaAs Schottky diode, in the case of equal schottky junction area, the present invention can bear bigger input power, and heat dispersion strengthens；Device architecture of the present invention is simple, it is easy to accomplish.
Description to embodiments of the present invention is merely to illustrate technical scheme above; rather than limitation of the scope of the invention; the present invention is not limited to disclosed be embodied as example; embodiment of the present invention can be modified or wherein portion of techniques feature is carried out equivalent by those skilled in the art, and these amendments or replacement all should fall into protection scope of the present invention.
Claims (5)
1. a GaN transverse Schottky diode based on polarization doping, it is characterized in that including substrate (107) from bottom to top, cushion (106) and GaN layer (105), GaN layer (105) is provided with graded component AlGaN layer (102), the ohmic contact metal layer (101) formed with graded component AlGaN layer (102) transversary and Schottky contact metal layer (103), ohmic contact metal layer (101) and Schottky contact metal layer (103) are positioned at the both sides of graded component AlGaN layer (102), the Al component of described graded component AlGaN layer (102) is non-uniform Distribution, Schottky contacts lead-in wire electrode is positioned at the right side of described schottky metal layer, and directly contact with the right side of described schottky metal layer；
Described Schottky diode is realized by following semiconductor technology:
The first step, mesa etch: mesa region is graded component AlGaN layer (102) and part GaN layer (105), by the method for dry etching, etch away the dual-side part of the GaN layer (105) of AlGaN layer (102) and top section, form the table top between graded component AlGaN layer (102) and GaN layer (105)；
Second step, make Ohmic contact: make ohmic contact metal layer 101 by evaporated metal, ohmic contact metal layer (101) is followed successively by Ti, Al, Ni, Au from bottom to top, and by alloy, ohmic contact metal layer 101 forms Ohmic contact with graded component AlGaN layer (102)；
3rd step, makes Schottky contacts: by evaporated metal Ni, Au, metal and graded component AlGaN layer 102 form Schottky contact metal layer (103)；
4th step, makes Schottky contacts lead-in wire electrode (104).
GaN transverse Schottky diode based on polarization doping the most according to claim 1, it is characterised in that the Al component of described graded component AlGaN layer (102) is gradient to 30% from top to bottom or from bottom to top by 0.
GaN transverse Schottky diode based on polarization doping the most according to claim 1, it is characterised in that described substrate (107) is sapphire, Si, SiC or GaN.
GaN transverse Schottky diode based on polarization doping the most according to claim 1, it is characterised in that described cushion (106) is AlN.
GaN transverse Schottky diode based on polarization doping the most according to claim 1, it is characterised in that have silicon nitride passivation (108) graded component AlGaN layer (102) is grown above.
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| CN103794643B (en) * | 2014-01-22 | 2016-03-02 | 西安电子科技大学 | A kind of based on groove grid high tension apparatus and preparation method thereof |
| CN104882522A (en) * | 2015-06-08 | 2015-09-02 | 中国科学院半导体研究所 | Dopant-free AlGaN-based ultraviolet light-emitting diode and preparation method |
| CN108831932B (en) * | 2018-06-27 | 2021-07-02 | 电子科技大学 | Transverse MIS-Schottky mixed anode diode of gallium nitride |
| CN111509033B (en) * | 2020-04-07 | 2022-04-19 | 深圳第三代半导体研究院 | Polarization-doped SBD diode and preparation method thereof |
Citations (4)
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| CN101562182A (en) * | 2008-04-02 | 2009-10-21 | 香港科技大学 | Integrated hemt and a combination, method as well as a system of a horizontal field effect rectifier |
| CN102308390A (en) * | 2008-12-10 | 2012-01-04 | 特兰斯夫公司 | Semiconductor heterostructure diodes |
| CN102315280A (en) * | 2010-07-08 | 2012-01-11 | 英特赛尔美国股份有限公司 | Have the field plate of merging and the Schottky diode of guard ring |
| CN203351611U (en) * | 2013-07-31 | 2013-12-18 | 中国电子科技集团公司第十三研究所 | Polarization doping-based GaN transverse Schottky diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7084475B2 (en) * | 2004-02-17 | 2006-08-01 | Velox Semiconductor Corporation | Lateral conduction Schottky diode with plural mesas |
| US7229866B2 (en) * | 2004-03-15 | 2007-06-12 | Velox Semiconductor Corporation | Non-activated guard ring for semiconductor devices |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101562182A (en) * | 2008-04-02 | 2009-10-21 | 香港科技大学 | Integrated hemt and a combination, method as well as a system of a horizontal field effect rectifier |
| CN102308390A (en) * | 2008-12-10 | 2012-01-04 | 特兰斯夫公司 | Semiconductor heterostructure diodes |
| CN102315280A (en) * | 2010-07-08 | 2012-01-11 | 英特赛尔美国股份有限公司 | Have the field plate of merging and the Schottky diode of guard ring |
| CN203351611U (en) * | 2013-07-31 | 2013-12-18 | 中国电子科技集团公司第十三研究所 | Polarization doping-based GaN transverse Schottky diode |
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