CN103395741A - Monitoring structure and monitoring method for micro-electro-mechanical process - Google Patents
Monitoring structure and monitoring method for micro-electro-mechanical process Download PDFInfo
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- CN103395741A CN103395741A CN2013103316548A CN201310331654A CN103395741A CN 103395741 A CN103395741 A CN 103395741A CN 2013103316548 A CN2013103316548 A CN 2013103316548A CN 201310331654 A CN201310331654 A CN 201310331654A CN 103395741 A CN103395741 A CN 103395741A
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Abstract
The invention provides a monitoring structure and a monitoring method for a micro-electro-mechanical process. Material removal condition under a movable block is evaluated by monitoring a current between a movable plate and a fixed plate; and over-etched amount of a suspension element is evaluated by the difference between pull-in voltages. The movable plate is a movable mass block which is prepared by second layer polycrystalline silicon, with the lower sacrificial layer thereof is removed; and the fixed plate is used as a substrate. In the monitoring structure and the monitoring method for the micro-electro-mechanical process, reliability of the micro-electro-mechanical process is determined by parameters measured by a parameter analyzer, so that time consumption for monitoring the micro-electro-mechanical process is reduced and reliability for monitoring the micro-electro-mechanical process is increased.
Description
Technical field
The present invention relates to field of micro electromechanical technology, particularly a kind of micro electronmechanical process monitoring structure and method for supervising.
Background technology
Micro electronmechanical (MEMS) of the prior art device, sensors such as accelerometer, gyroscope, they comprise the unit such as anchor point, spring beam, movable mass and electrode that are fixed on substrate.Surface treatment is micro electronmechanical manufacturing process commonly used, for guaranteeing micro electronmechanical reliability, need to accurately monitor the manufacturing process fluctuation of these unit.
Adopt the micro electro mechanical inertia sensing device of surface treatment making take silicon chip as substrate, by repeatedly thin-film deposition and figure processing prepare three-dimensional micro mechanical structure.Thin layer material commonly used has: polysilicon, silicon nitride, silica and metal.Typical processing step comprises: substrate is prepared, once oxidation forms insulating barrier, deposit forms the ground floor polysilicon layer, and etching ground floor polysilicon layer forms electrode and interconnection line, and secondary oxidation forms sacrifice layer, etching sacrificial layer forms through hole, deposit forms second layer polysilicon layer, and deposit forms metal level, and etching sheet metal forms interconnection line, etching second layer polysilicon layer forms the frame for movement figure, removes sacrifice layer and forms the movable structure unit.
Etching (being referred to as etching polysilicon) to ground floor polysilicon layer and second layer polysilicon layer generally adopts dry etching, and the method for removing sacrifice layer is generally to adopt hydrofluoric acid (HF) to fumigate.In microcomputer electric surface technique, the stifling amount of etching polysilicon amount and sacrifice layer is the most important link of the micro electronmechanical reliability of impact.Existing assessment to etch amount and stifling amount is mainly to do to examine under a microscope and draw again after slicing treatment by the structure to manufacturing, and is not only time-consuming but also be difficult to homogeneity question on sheet is assessed, thereby affects the micro electronmechanical reliability of made.For guaranteeing micro electronmechanical reliability, must have economical and practical and reliable method for supervising.
Summary of the invention
The object of the present invention is to provide a kind of micro electronmechanical process monitoring structure and method for supervising, to solve the problem that existing micro electronmechanical process monitoring method is time-consuming and reliability is not high.
For solving the problems of the technologies described above, the invention provides a kind of micro electronmechanical process monitoring structure, described micro electronmechanical process monitoring structure comprises: substrate; Be positioned at the insulating barrier on described substrate; Be positioned at the sacrifice layer on described insulating barrier; Be positioned at the fixed mass piece on described sacrifice layer; And hang on the movable mass on described fixed mass piece by hanging element; Wherein, the quantity of described fixed mass piece and movable mass is a plurality of, and corresponding one by one; When monitoring, an end of a parameter analyzer connects described substrate, and the other end connects a plurality of fixed mass pieces successively, the parameter value measured according to described parameter analyzer, the reliability of the micro electronmechanical technique of judgement.
Optionally, in described micro electronmechanical process monitoring structure, carry out any one or a few in following monitoring:
When described parameter analyzer, from certain fixed mass BOB(beginning of block), all can measure electric current, judge half stifling amount as insulating barrier and sacrifice layer of the W1 value of the movable mass that this fixed mass piece is corresponding;
When described parameter analyzer can be measured electric current from certain fixed mass BOB(beginning of block), and the little structure of W1 value of the movable mass more corresponding than this fixed mass piece have can measure electric current, what have can not measure electric current, judges on insulating barrier and sacrifice layer to exist and pollutes;
When described parameter analyzer all can be measured electric current from certain fixed mass BOB(beginning of block), and on wafer, to measure at first the W1 value of the movable mass that the fixed mass piece of electric current is corresponding different for diverse location, judge that the stifling amount of the insulating barrier of diverse location on wafer and sacrifice layer is inhomogeneous;
When described parameter analyzer all can be measured electric current from certain fixed mass BOB(beginning of block), and in the identical situation of the W1 value of the movable mass that on wafer, the fixed mass piece of diverse location is corresponding, corresponding pick-up voltage value difference, judge that the etch amount of polysilicon is inhomogeneous.
Optionally, in described micro electronmechanical process monitoring structure, described movable mass be shaped as comb structure.
Optionally, in described micro electronmechanical process monitoring structure, a plurality of movable mass are arranged in order; And the horizontal stripe width W 1 of a plurality of movable mass is successively decreased, and the horizontal stripe spacing W2 of a plurality of movable mass is identical.
Optionally, in described micro electronmechanical process monitoring structure, described movable mass be shaped as the slab construction with release aperture.
Optionally, in described micro electronmechanical process monitoring structure, a plurality of movable mass are arranged in order; And the release aperture spacing W1 of a plurality of movable mass successively decreases; The release aperture width W 2 of a plurality of movable mass is identical.
Optionally, in described micro electronmechanical process monitoring structure, the pick-up voltage between described movable mass and substrate is 5V～10V.
The present invention also provides a kind of micro electronmechanical process monitoring method, and described micro electronmechanical process monitoring method comprises:
Step 1: the as above described micro electronmechanical process monitoring structure of any one is provided;
Step 2: an end of parameter analyzer is connected to substrate, and the other end connects a fixed mass piece, and the parameter analyzer output voltage detects electric current, and wherein, output voltage is from the zero scan to the setting value;
Step 3: record detects electric current and whether reaches setting value, and the other end of parameter analyzer connects next fixed mass piece subsequently, repeated execution of steps 2, and record detects electric current and whether reaches setting value, until last fixed mass piece.
In micro electronmechanical process monitoring structure provided by the invention and method for supervising, by the reliability of the micro electronmechanical technique of the measured parameter value of parameter analyzer judgement, reduce thus used time of micro electronmechanical process monitoring and improve the reliability to micro electronmechanical process monitoring.
The accompanying drawing explanation
Fig. 1 is the structural representation of the micro electronmechanical process monitoring structure of the embodiment of the present invention one;
Fig. 2 a is a schematic diagram of the movable mass of the embodiment of the present invention;
Fig. 2 b is another schematic diagram of the movable mass of the embodiment of the present invention;
Fig. 3 is the structural representation of the micro electronmechanical process monitoring structure of the embodiment of the present invention two;
Fig. 4 is the structural representation of the micro electronmechanical process monitoring structure of the embodiment of the present invention three;
Fig. 5 is the schematic diagram of ground floor polysilicon layer of the comb teeth-shaped of the embodiment of the present invention.
The specific embodiment
Below in conjunction with the drawings and specific embodiments, micro electronmechanical process monitoring structure and the method for supervising that the present invention proposes is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the present invention lucidly.
Between movable plate and fixed head, apply voltage, along with the increase of voltage, movable plate can be little by little close to fixed head; When the voltage that applies between two flat boards reached certain value, system was in a critical equilbrium position; If continue to apply voltage, two unexpected adhesives of flat board (Pull-in) phenomenon together will occur; If two flat boards are conductive material,, after two flat boards are pulled together, can pass through the parameter analyzer read current.In micro electronmechanical manufacture process, for making certain layer material become movable plate, the backing material under this layer material must be removed, guarantee that namely this layer material becomes suspension structure; For making this suspension structure can carry out function, need to be fixed by hanging element simultaneously.Basic ideas of the present invention are exactly to remove situation by monitoring the material that two electric currents between flat board assess under movable block, can assess by the difference of pick-up voltage the amount at quarter of crossing of hanging element simultaneously.
According to the micro electronmechanical concrete structure that adopts surface treatment to manufacture, above-mentioned movable plate and fixed head have respectively following three kinds of situations: 1, movable plate is the movable mass that second layer polysilicon is made and its lower sacrifice layer is removed, and fixed head is the ground floor polysilicon that is deposited on insulating barrier; 2, movable plate is the movable mass that second layer polysilicon is made and its lower sacrifice layer is removed, and fixed head is substrate; 3, movable plate is its ground floor polysilicon that descends insulating barrier to be removed, and fixed head is substrate.
[embodiment mono-]
Please refer to Fig. 1, it is the structural representation of the micro electronmechanical process monitoring structure of the embodiment of the present invention one.As shown in Figure 1, described micro electronmechanical process monitoring structure 1 comprises: substrate 10; Be positioned at the insulating barrier 11 on described substrate 10; Be positioned at the ground floor polysilicon layer 12 on described insulating barrier 11; Be positioned at the sacrifice layer 13 on described ground floor polysilicon layer 12; Be positioned at the fixed mass piece 14 on described sacrifice layer 13; And hang on the movable mass 16 on described fixed mass piece 14 by hanging element 15; Wherein, the quantity of described fixed mass piece 14 and movable mass 16 is a plurality of, and corresponding (namely a movable mass 16 hangs on a fixed mass piece 14 and forms a mass combination by a hanging element 15, at this, a plurality of such mass combinations is arranged) one by one; When monitoring, an end of a parameter analyzer 17 connects described ground floor polysilicon layer 12, and the other end connects a plurality of fixed mass pieces 14 successively, according to the measured parameter value of described parameter analyzer 17, and the reliability of the micro electronmechanical technique of judgement.
Wherein, described substrate 10 is made by semi-conducting material, particularly by silicon, is made; Described fixed mass piece 14, hanging element 15 and movable mass 16 are made by same layer polysilicon layer (being second layer polysilicon layer at this), and mechanically with on electricity all connect together, the thickness of common this second layer polysilicon layer is 15 μ m～20 μ m, and namely the thickness of described fixed mass piece 14, hanging element 15 and movable mass 16 is 15 μ m～20 μ m.
Preferably, described movable mass 16 be shaped as comb structure, concrete, please refer to Fig. 2 a, it is a schematic diagram of the movable mass of the embodiment of the present invention.As shown in Figure 2 a, described movable mass 16 is shaped as comb structure, the vertical bar 161 that it comprises a plurality of horizontal stripes 160 and connects a plurality of horizontal stripes 160.Wherein, for a movable mass 16, the width W 1 of each horizontal stripe 160 is identical, and the spacing W2 between each horizontal stripe 160 is identical.
In the present embodiment, the quantity of described movable mass 16 is a plurality of, a plurality of movable mass 16 are arranged in order (namely lining up a file or a line), and the horizontal stripe width W 1 of a plurality of movable mass 16 successively decreases, and the horizontal stripe spacing W2 of a plurality of movable mass 16 is identical.For example, the horizontal stripe width W 1 of first movable mass 16 is 20 μ m, and the horizontal stripe width W 1 of second movable mass 16 is 19 μ m ... by that analogy; The horizontal stripe spacing W2 of each movable mass 16 is 10 μ m etc.At this, the horizontal stripe spacing W2 by a plurality of movable mass 16 is set to identical, can guarantee that monitoring of environmental is identical, thereby improves the reliability of monitoring.
In addition, about the shape of described movable mass 16, another preferred version is, described movable mass 16 be shaped as the slab construction with release aperture, concrete, please refer to Fig. 2 b, it is another schematic diagram of the movable mass of the embodiment of the present invention.As shown in Figure 2 b, movable mass 16 be shaped as the slab construction with release aperture, namely have a plurality of release aperture 163 on dull and stereotyped 162.Wherein, for a movable mass 16, between adjacent two release aperture 163, be spaced apart release aperture spacing W1, W1 is identical for this release aperture spacing; Each release aperture 163 is square, and the aperture/width W 2 of square release aperture 163 is identical.
Same, in the present embodiment, the quantity of described movable mass 16 is a plurality of, a plurality of movable mass 16 are arranged in order (namely lining up a file or a line), and the release aperture 163 spacing W1 of a plurality of movable mass successively decrease; Release aperture 163 width W 2 of a plurality of movable mass are identical, do not repeat them here, in the subsequent description of this external the present embodiment, take the movable mass 16 of comb structure as example.
In the present embodiment, described hanging element 15 can adopt the structure of similar practical devices, as folded beam structure commonly used in accelerometer or gyroscope, its width is generally 2 μ m～3 μ m, length can be chosen by simulation software, the principle that length is chosen is to guarantee that the movable mass 16 that is attached thereto and the pick-up voltage between ground floor polysilicon layer 12 are 5V～10V, consider actual deviation, but design voltage is 7V.Wherein, elect the pick-up voltage between movable mass 16 and ground floor polysilicon layer 12 as 5V～10V, both can prevent the problem that the too high high electric current that produces of pick-up voltage may cause movable mass 16 and ground floor polysilicon layer 12 to weld together, can prevent again the too low problem that may cause movable mass 16 to subside of pick-up voltage in manufacture process.
In the present embodiment, the sacrifice layer 13 under fixed mass piece 14 is under major part is retained in stifling process, therefore can play a supporting role to fixed mass piece 14.Sacrifice layer 13 is made by silica, and thickness is generally 1.5 μ m～2 μ m, and its stifling amount is except outside the Pass the concentration with hydrofluoric acid, temperature and time have, and is also relevant with the shape of peripheral polysilicon layer.
In the present embodiment, described ground floor polysilicon layer 12 plays wiring or electrode effect.One end of parameter analyzer 17 (probe in other words) is connected to the pressure point that fixed mass piece 14 is drawn, and the other end of parameter analyzer 17 (another probe in other words) is connected to the pressure point that ground floor polysilicon layer 12 is drawn.Thus, can guarantee between parameter analyzer 17 and fixed mass piece 14 and ground floor polysilicon layer 12 contact good, thereby guarantee the reliability of monitoring.
In the present embodiment, also provide a kind of micro electronmechanical process monitoring method, comprising:
Step 1: one (above-mentioned) micro electronmechanical process monitoring structure is provided;
Step 2: an end of parameter analyzer is connected to the ground floor polysilicon layer, and the other end connects a fixed mass piece, and the parameter analyzer output voltage detects electric current, and wherein, output voltage is from the zero scan to the setting value;
Step 3: record detects electric current and whether reaches setting value, and the other end of parameter analyzer connects next fixed mass piece subsequently, repeated execution of steps 2, and record detects electric current and whether reaches setting value, until last fixed mass piece.
In the present embodiment, preferably, pick-up voltage between movable mass 16 and ground floor polysilicon layer 12 is 5V～10V, but, when carrying out concrete operations, the scanning voltage of parameter analyzer 17 can be set as to 0V～15V, sweep spacing is 1V, can further guarantee the reliability of monitoring thus.Simultaneously, in the present embodiment, damage test structure when preventing from testing, the maximum output current of parameter analyzer 17 is defined as to 1 μ A.
If the quantity of mass combination is 10, namely the quantity of fixed mass piece 14 is 10, at the other end of parameter analyzer 17 respectively with after these 10 fixed mass pieces 14 contact, detect, will obtain the following conclusion:
When described parameter analyzer, from certain fixed mass BOB(beginning of block), all can measure electric current, judge half stifling amount as sacrifice layer of the W1 value of the movable mass that this fixed mass piece is corresponding;
When described parameter analyzer can be measured electric current from certain fixed mass BOB(beginning of block), and the little structure of W1 value of the movable mass more corresponding than this fixed mass piece have can measure electric current, what have can not measure electric current, judges on sacrifice layer to exist and pollutes;
When described parameter analyzer all can be measured electric current from certain fixed mass BOB(beginning of block), and on wafer, to measure at first the W1 value of the movable mass that the fixed mass piece of electric current is corresponding different for diverse location, judge that the stifling amount of sacrifice layer of diverse location on wafer is inhomogeneous;
When described parameter analyzer all can be measured electric current from certain fixed mass BOB(beginning of block), and in the identical situation of the W1 value of the movable mass that on wafer, the fixed mass piece of diverse location is corresponding, corresponding pick-up voltage value difference, judge that the etch amount of ground floor polysilicon is inhomogeneous.
As can be seen here, in micro electronmechanical process monitoring structure and method for supervising that the present embodiment provides, by the reliability of the micro electronmechanical technique of the measured parameter value of parameter analyzer judgement, reduce thus used time of micro electronmechanical process monitoring and improve the reliability to micro electronmechanical process monitoring.
[embodiment bis-]
Please refer to Fig. 3, it is the structural representation of the micro electronmechanical process monitoring structure of the embodiment of the present invention two.As shown in Figure 3, described micro electronmechanical process monitoring structure 2 comprises: substrate 20; Be positioned at the insulating barrier 21 on described substrate 20; Be positioned at the sacrifice layer 22 on described insulating barrier 21; Be positioned at the fixed mass piece 23 on described sacrifice layer 22; And hang on the movable mass 25 on described fixed mass piece 23 by hanging element 24; Wherein, the quantity of described fixed mass piece 23 and movable mass 25 is a plurality of, and corresponding (namely a movable mass 25 hangs on a fixed mass piece 23 and forms a mass combination by a hanging element 24, at this, a plurality of such mass combinations is arranged) one by one; When monitoring, an end of a parameter analyzer 26 connects described substrate 20, and the other end connects a plurality of fixed mass pieces 23 successively, according to the measured parameter value of described parameter analyzer 26, and the reliability of the micro electronmechanical technique of judgement.
Wherein, described substrate 20 is made by semi-conducting material, particularly by silicon, is made; Described fixed mass piece 23, hanging element 24 and movable mass 25 are made by same layer polysilicon layer (being second layer polysilicon layer at this), and mechanically with on electricity all connect together, the thickness of common this second layer polysilicon layer is 15 μ m～20 μ m, and namely the thickness of described fixed mass piece 23, hanging element 24 and movable mass 25 is 15 μ m～20 μ m.
Preferably, described movable mass 25 be shaped as comb structure, a plurality of movable mass 25 are arranged in order; And the horizontal stripe width W 1 of a plurality of movable mass 25 is successively decreased, and the horizontal stripe spacing W2 of a plurality of movable mass 25 is identical; Perhaps described movable mass 25 be shaped as the slab construction with release aperture, a plurality of movable mass 25 are arranged in order; And the release aperture spacing W1 of a plurality of movable mass 25 successively decreases; The release aperture width W 2 of a plurality of movable mass 25 is identical.Can corresponding reference example one to this, the present embodiment two does not repeat them here.
In the present embodiment, described hanging element 24 can adopt the structure of similar practical devices, as folded beam structure commonly used in accelerometer or gyroscope, its width is generally 2 μ m～3 μ m, length can be chosen by simulation software, the principle that length is chosen is to guarantee that the movable mass 25 that is attached thereto and the pick-up voltage between substrate 20 are 5V～10V, consider actual deviation, but design voltage is 7V.Wherein, elect the pick-up voltage between movable mass 25 and substrate 20 as 5V～10V, both can prevent the problem that the too high high electric current that produces of pick-up voltage may cause movable mass 25 and substrate 20 to weld together, can prevent again the too low problem that may cause movable mass 25 to subside of pick-up voltage in manufacture process.
In the present embodiment, the sacrifice layer 22 under fixed mass piece 23 and insulating barrier 21 are under major part is retained in stifling process, therefore can play a supporting role to fixed mass piece 23.Sacrifice layer 22 is made by silica, and thickness is generally 1.5 μ m～2 μ m; Insulating barrier 21 is made by silica, and thickness is generally 2 μ m～2.5 μ m; The gross thickness of sacrifice layer 22 and insulating barrier 21 is generally 3.5 μ m～4.5 μ m.Its stifling amount is except outside the Pass the concentration with hydrofluoric acid, temperature and time have, and is also relevant with the shape of peripheral polysilicon layer.
In the present embodiment, an end of parameter analyzer 26 (probe in other words) is connected to the pressure point that fixed mass piece 23 is drawn, and the other end of parameter analyzer 26 (another probe in other words) is connected to the pressure point that substrate 20 is drawn.Thus, can guarantee between parameter analyzer 26 and fixed mass piece 23 and substrate 20 contact good, thereby guarantee the reliability of monitoring.
In the present embodiment, also provide a kind of micro electronmechanical process monitoring method, comprising:
Step 1: one (above-mentioned) micro electronmechanical process monitoring structure is provided;
Step 2: an end of parameter analyzer is connected to substrate, and the other end connects a fixed mass piece, and the parameter analyzer output voltage detects electric current, and wherein, output voltage is from the zero scan to the setting value;
Step 3: record detects electric current and whether reaches setting value, and the other end of parameter analyzer connects next fixed mass piece subsequently, repeated execution of steps 2, and record detects electric current and whether reaches setting value, until last fixed mass piece.
In the present embodiment, preferred, the pick-up voltage between movable mass 25 and substrate 20 is 5V～10V, but, when carrying out concrete operations, the scanning voltage of parameter analyzer 26 can be set as to 0V～15V, sweep spacing is 1V, can further guarantee the reliability of monitoring thus.Simultaneously, in the present embodiment, damage test structure when preventing from testing, the maximum output current of parameter analyzer 26 is defined as to 1 μ A.
If the quantity of mass combination is 10, namely the quantity of fixed mass piece 23 is 10, at the other end of parameter analyzer 26 respectively with after these 10 fixed mass pieces 23 contact, detect, will obtain the following conclusion:
When described parameter analyzer, from certain fixed mass BOB(beginning of block), all can measure electric current, judge half stifling amount as insulating barrier and sacrifice layer of the W1 value of the movable mass that this fixed mass piece is corresponding;
When described parameter analyzer can be measured electric current from certain fixed mass BOB(beginning of block), and the little structure of W1 value of the movable mass more corresponding than this fixed mass piece have can measure electric current, what have can not measure electric current, judges on insulating barrier and sacrifice layer to exist and pollutes;
When described parameter analyzer all can be measured electric current from certain fixed mass BOB(beginning of block), and on wafer, to measure at first the W1 value of the movable mass that the fixed mass piece of electric current is corresponding different for diverse location, judge that the stifling amount of the insulating barrier of diverse location on wafer and sacrifice layer is inhomogeneous;
When described parameter analyzer all can be measured electric current from certain fixed mass BOB(beginning of block), and in the identical situation of the W1 value of the movable mass that on wafer, the fixed mass piece of diverse location is corresponding, corresponding pick-up voltage value difference, judge that the etch amount of polysilicon is inhomogeneous.
As can be seen here, in micro electronmechanical process monitoring structure and method for supervising that the present embodiment provides, by the reliability of the micro electronmechanical technique of the measured parameter value of parameter analyzer judgement, reduce thus used time of micro electronmechanical process monitoring and improve the reliability to micro electronmechanical process monitoring.
[embodiment tri-]
Please refer to Fig. 4, it is the structural representation of the micro electronmechanical process monitoring structure of the embodiment of the present invention three.As shown in Figure 4, described micro electronmechanical process monitoring structure 3 comprises: substrate 30; Be positioned at the insulating barrier 31 on described substrate 30; Be positioned at the ground floor polysilicon layer 32 of a plurality of comb teeth-shapeds on described insulating barrier 31; When monitoring, an end of a parameter analyzer 37 connects described substrate 30, and the other end connects the ground floor polysilicon layer 32 of a plurality of comb teeth-shapeds successively, according to the measured parameter value of described parameter analyzer 37, and the reliability of the micro electronmechanical technique of judgement.
In the present embodiment, the ground floor polysilicon layer 32 of a plurality of comb teeth-shapeds is arranged in order; And the horizontal stripe width W 1 of the ground floor polysilicon layer 32 of a plurality of comb teeth-shapeds is successively decreased, and the horizontal stripe spacing W2 of the ground floor polysilicon layer 32 of a plurality of comb teeth-shapeds is identical.
Please refer to Fig. 5, it is the schematic diagram of ground floor polysilicon layer of the comb teeth-shaped of the embodiment of the present invention.As shown in Figure 5, the ground floor polysilicon layer 32 of described comb teeth-shaped comprises a plurality of horizontal stripes 320 and connects the vertical bar 321 of a plurality of horizontal stripes 320.Wherein, for the ground floor polysilicon layer 32 of a comb teeth-shaped, the width W 1 of each horizontal stripe 320 is identical, and the spacing W2 between each horizontal stripe 321 is identical.Movable mass compared to the comb structure in embodiment mono-and embodiment bis-, the vertical bar 321 of the ground floor polysilicon layer 32 of the comb teeth-shaped in the present embodiment is wider, is equivalent to vertical bar and the fixed mass piece sum of the movable mass in embodiment mono-and embodiment bis-.So the reason of design is, in the present embodiment, described ground floor polysilicon layer 32 is used as line or electrode, its thickness is generally 0.5 μ m～1 μ m, thickness much smaller than the movable mass in embodiment mono-and embodiment bis-, therefore the movable mass in embodiment mono-and embodiment bis-and fixed mass piece can be combined, centre does not need to use hanging element.
In the present embodiment, the insulating barrier 31 of horizontal stripe 320 belows of the ground floor polysilicon layer 32 of comb teeth-shaped will be by smoked empty, by parameter analyzer 37, between the ground floor polysilicon layer 32 of comb teeth-shaped and substrate 30, apply voltage, just can make the horizontal stripe 320 of the ground floor polysilicon layer 32 of comb teeth-shaped move and final adhesive to substrate 30.Preferably, the ground floor polysilicon layer 32 of described comb teeth-shaped and the pick-up voltage between substrate 30 are 5V～10V.
In the present embodiment, described insulating barrier 31 is made by silica, and thickness is generally 2 μ m～2.5 μ m.In addition, the ground floor polysilicon layer 32 of each comb teeth-shaped also can further comprise: be positioned at the sacrifice layer 33 on the ground floor polysilicon layer 32 of described comb teeth-shaped; Be positioned at the fixed mass piece 34 on described sacrifice layer 33; And the movable mass 36(that hangs on described fixed mass piece 34 by hanging element 35 is called the mass combination equally at this).
Common, on ground floor polysilicon layer 32, also will form various structures, therefore in the present embodiment, described mass combination is used as a kind of environment, so that monitoring is more true and reliable.Wherein, the concrete situation of described mass combination can corresponding reference example one, and the present embodiment three repeats no more.
In the present embodiment, also provide a kind of micro electronmechanical process monitoring method, comprising:
Step 1: one (above-mentioned) micro electronmechanical process monitoring structure is provided;
Step 2: an end of parameter analyzer is connected to substrate, and the other end connects the ground floor polysilicon layer of a comb teeth-shaped, and the parameter analyzer output voltage detects electric current, and wherein, output voltage is from the zero scan to the setting value;
Step 3: record detects electric current and whether reaches setting value, the other end of parameter analyzer connects the ground floor polysilicon layer of next comb teeth-shaped subsequently, repeated execution of steps 2, and record detects electric current and whether reaches setting value, until the ground floor polysilicon layer of last comb teeth-shaped.
In the present embodiment, preferably, ground floor polysilicon layer 32 and the pick-up voltage between substrate 30 of comb teeth-shaped are 5V～10V, but, when carrying out concrete operations, the scanning voltage of parameter analyzer 37 can be set as to 0V～15V, sweep spacing is 1V, can further guarantee the reliability of monitoring thus.Simultaneously, in the present embodiment, damage test structure when preventing from testing, the output current of parameter analyzer 37 is defined as to 1 μ A.
If the quantity of the ground floor polysilicon layer 32 of comb teeth-shaped is 10, at the other end of parameter analyzer 37 respectively with after the ground floor polysilicon layer 32 of these 10 comb teeth-shapeds contacts, detects, will obtain the following conclusion:
When described parameter analyzer starts all can measure electric current from the ground floor polysilicon layer of certain comb teeth-shaped, judge half stifling amount as insulating barrier of W1 value of the ground floor polysilicon layer of this comb teeth-shaped;
When described parameter analyzer starts to measure electric current from the ground floor polysilicon layer of certain comb teeth-shaped, and can measure electric current than what the little structure of W1 value of the ground floor polysilicon layer of this comb teeth-shaped had, what have can not measure electric current, judges on insulating barrier and exists and pollute;
When described parameter analyzer starts all can measure electric current from the ground floor polysilicon layer of certain comb teeth-shaped, and on wafer, to measure at first the W1 value of ground floor polysilicon layer of comb teeth-shaped of electric current different for diverse location, judge that the stifling amount of insulating barrier of diverse location on wafer is inhomogeneous.
As can be seen here, in micro electronmechanical process monitoring structure and method for supervising that the present embodiment provides, by the reliability of the micro electronmechanical technique of the measured parameter value of parameter analyzer judgement, reduce thus used time of micro electronmechanical process monitoring and improve the reliability to micro electronmechanical process monitoring.
Foregoing description is only the description to preferred embodiment of the present invention, and not to any restriction of the scope of the invention, any change, modification that the those of ordinary skill in field of the present invention is done according to above-mentioned disclosure, all belong to the protection domain of claims.
Claims (8)
1. a micro electronmechanical process monitoring structure, is characterized in that, comprising: substrate; Be positioned at the insulating barrier on described substrate; Be positioned at the sacrifice layer on described insulating barrier; Be positioned at the fixed mass piece on described sacrifice layer; And hang on the movable mass on described fixed mass piece by hanging element; Wherein, the quantity of described fixed mass piece and movable mass is a plurality of, and corresponding one by one; When monitoring, an end of a parameter analyzer connects described substrate, and the other end connects a plurality of fixed mass pieces successively, the parameter value measured according to described parameter analyzer, the reliability of the micro electronmechanical technique of judgement.
2. micro electronmechanical process monitoring structure as claimed in claim 1, is characterized in that, carries out any one or a few in following monitoring:
When described parameter analyzer, from certain fixed mass BOB(beginning of block), all can measure electric current, judge half stifling amount as insulating barrier and sacrifice layer of the W1 value of the movable mass that this fixed mass piece is corresponding;
When described parameter analyzer can be measured electric current from certain fixed mass BOB(beginning of block), and the little structure of W1 value of the movable mass more corresponding than this fixed mass piece have can measure electric current, what have can not measure electric current, judges on insulating barrier and sacrifice layer to exist and pollutes;
When described parameter analyzer all can be measured electric current from certain fixed mass BOB(beginning of block), and on wafer, to measure at first the W1 value of the movable mass that the fixed mass piece of electric current is corresponding different for diverse location, judge that the stifling amount of the insulating barrier of diverse location on wafer and sacrifice layer is inhomogeneous;
When described parameter analyzer all can be measured electric current from certain fixed mass BOB(beginning of block), and in the identical situation of the W1 value of the movable mass that on wafer, the fixed mass piece of diverse location is corresponding, corresponding pick-up voltage value difference, judge that the etch amount of polysilicon is inhomogeneous.
3. micro electronmechanical process monitoring structure as claimed in claim 1, is characterized in that, described movable mass be shaped as comb structure.
4. micro electronmechanical process monitoring structure as claimed in claim 3, is characterized in that, a plurality of movable mass are arranged in order; And the horizontal stripe width W 1 of a plurality of movable mass is successively decreased, and the horizontal stripe spacing W2 of a plurality of movable mass is identical.
5. micro electronmechanical process monitoring structure as claimed in claim 1, is characterized in that, described movable mass be shaped as the slab construction with release aperture.
6. micro electronmechanical process monitoring structure as claimed in claim 5, is characterized in that, a plurality of movable mass are arranged in order; And the release aperture spacing W1 of a plurality of movable mass successively decreases; The release aperture width W 2 of a plurality of movable mass is identical.
7. micro electronmechanical process monitoring structure as described as claim 4 or 6, is characterized in that, the pick-up voltage between described movable mass and substrate is 5V～10V.
8. a micro electronmechanical process monitoring method, is characterized in that, comprising:
Step 1: micro electronmechanical process monitoring structure as described as any one in claim 1-7 is provided;
Step 2: an end of parameter analyzer is connected to substrate, and the other end connects a fixed mass piece, and the parameter analyzer output voltage detects electric current, and wherein, output voltage is from the zero scan to the setting value;
Step 3: record detects electric current and whether reaches setting value, and the other end of parameter analyzer connects next fixed mass piece subsequently, repeated execution of steps 2, and record detects electric current and whether reaches setting value, until last fixed mass piece.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000019520A1 (en) * | 1998-09-30 | 2000-04-06 | Lam Research Corporation | Methods and apparatus for determining an etch endpoint in a plasma processing system |
| JP2004363367A (en) * | 2003-06-05 | 2004-12-24 | Tokyo Electron Ltd | Etching amount detecting method, etching method, and etching apparatus |
| CN1752288A (en) * | 2005-11-02 | 2006-03-29 | 北京大学 | Quantitative monitoring method and structure for plasma etching |
| CN101319957A (en) * | 2008-06-03 | 2008-12-10 | 东南大学 | On-line automatic testing method and system for beam vibration fatigue reliability of micro electro-mechanical systems |
| CN103137510A (en) * | 2011-11-22 | 2013-06-05 | 北大方正集团有限公司 | Method and monitoring module for monitoring metal layer over-etching |
-
2013
- 2013-07-31 CN CN201310331654.8A patent/CN103395741B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000019520A1 (en) * | 1998-09-30 | 2000-04-06 | Lam Research Corporation | Methods and apparatus for determining an etch endpoint in a plasma processing system |
| JP2004363367A (en) * | 2003-06-05 | 2004-12-24 | Tokyo Electron Ltd | Etching amount detecting method, etching method, and etching apparatus |
| CN1752288A (en) * | 2005-11-02 | 2006-03-29 | 北京大学 | Quantitative monitoring method and structure for plasma etching |
| CN101319957A (en) * | 2008-06-03 | 2008-12-10 | 东南大学 | On-line automatic testing method and system for beam vibration fatigue reliability of micro electro-mechanical systems |
| CN103137510A (en) * | 2011-11-22 | 2013-06-05 | 北大方正集团有限公司 | Method and monitoring module for monitoring metal layer over-etching |
Non-Patent Citations (1)
| Title |
|---|
| 吕良等: ""基于MEMS技术的汽车传感器研究进展"", 《电工技术学报》, vol. 22, no. 4, 30 April 2007 (2007-04-30), pages 77 - 84 * |
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