CN103379295A - Solid imaging device and x-ray ct device including the solid imaging device - Google Patents

Solid imaging device and x-ray ct device including the solid imaging device Download PDF

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Publication number
CN103379295A
CN103379295A CN2013102890342A CN201310289034A CN103379295A CN 103379295 A CN103379295 A CN 103379295A CN 2013102890342 A CN2013102890342 A CN 2013102890342A CN 201310289034 A CN201310289034 A CN 201310289034A CN 103379295 A CN103379295 A CN 103379295A
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China
Prior art keywords
row
section
distribution
pixel
pixel section
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CN2013102890342A
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CN103379295B (en
Inventor
藤田一树
森治通
久嶋龙次
本田真彦
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/247—Detector read-out circuitry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Abstract

The present invention relates to a solid-state imaging device, etc. having a structure for capturing a high-resolution image even when any row selecting wiring is disconnected. The solid-state imaging device (1) comprises a photodetecting section (10), a signal reading-out section (20), a row selecting section (30), a column selecting section (40), an overflow preventing section (50), and a controlling section (60). The photodetecting section (10) has MN pixel portions P 1,1 to P M,N two-dimensionally arranged in a matrix of M rows and N columns, and each of the pixel portions P 1,1 to P M,N includes a photodiode that generates charge of an amount according to an incident light intensity and a reading-out switch connected to the photodiode. Each of the N pixel portions P m,1 to P m,N belonging to an m-th row is connected to the row selecting section (30) and the overflow preventing section (50) by an m-th row selecting wiring L V,m .

Description

Solid camera head and the X ray CT device that comprises it
The application is On January 22nd, 2009, application number is 200980103668.6, denomination of invention is Solid camera head and the X ray CT device that comprises itThe dividing an application of patent application.
Technical field
The present invention relates to possess the solid camera head of a plurality of light accepting parts of two-dimensional arrangement and the X ray CT device that comprises it.
Background technology
As solid camera head, well-known have a solid camera head that uses the CMOS technology, wherein especially take the solid camera head of passive type element sensor (PPS:Passive Pixel Sensor) mode known to the people (with reference to patent documentation 1).The solid camera head of PPS mode has the structure that the PPS type pixel section two-dimensional arrangements that comprises the photodiode that produces the electric charge of measuring accordingly with incident intensity becomes the capable N row of M.In each pixel section, in photodiode, produce electric charge corresponding to light incident and be stored in the capacity cell of integrating circuit, and output is corresponding to the magnitude of voltage of this amount of charge stored.
In general, belong to M pixel section output separately of each row via distribution is used in reading of arranging corresponding to these row, and be connected with the input of the integrating circuit that arranges corresponding to these row.Then, the electric charge that produces at the photodiode of pixel section walks to the M behavior from the 1st to be ended successively via reading of correspondence and is input to corresponding integrating circuit with distribution, and from this integrating circuit output and the corresponding magnitude of voltage of the quantity of electric charge.
In addition, N the pixel portion that belongs to each row do not selected to use distribution via the row that arranges corresponding to this row, and is connected with control part.According to selecting control signal from this control part and via the row selection with the row that distribution transmits, each pixel section is to read the electric charge that produces with distribution output in photodiode.
The solid camera head of PPS mode can be used for various uses, and for example the solid camera head of PPS mode and scintillator panel make up and also be used for medical application and industrial use as the X ray flat board.And then specifically, the solid-state image pickup of PPS mode is used for X ray CT device or microfocus X ray checking device etc.The solid state image device two-dimensional arrangements that is used for such use has the large-area light accepting part of M * N pixel section, and this light accepting part can surpass in the length on each limit being integrated of semiconductor substrate of the size of 10cm.Therefore, sometimes can only make 1 solid camera head by 1 chip semiconductor wafer.
Patent documentation 1: TOHKEMY 2006-234557 communique
Summary of the invention
Invent problem to be solved
The result that inventors discuss and study with regard to existing solid camera head has found following problem.Namely in existing solid camera head, making in the situation that occurs to break in the way with distribution corresponding to the arbitrarily row selection of row, be positioned at the pixel section with respect to the more close broken string of row selection portion position in the N of this row pixel section, select to be connected with the row selection portion with distribution by row, but, be positioned at respect to the row selection portion further from the broken string position pixel section with the row selection portion be not connected.
Namely in existing solid camera head, be arranged in respect to the pixel section of row selection portion further from the broken string position, the electric charge that produces in photodiode corresponding to light incident does not read to integrating circuit, but is stored in the junction capacitance section of this photodiode.Surpass saturation level if be stored in the amount of electric charge of the junction capacitance section of photodiode, the electric charge that then surpasses the part of saturation level overflows to adjacent pixel section.
Therefore, in existing solid camera head, when 1 row is selected with distribution generation broken string, its impact not only relates to the pixel section of selecting the row that is connected with distribution with this row, and relating to the pixel section of the row on adjacent both sides, its result produces defect line for 3 continuous row pixel sections.
On the other hand, if defect line is discontinuous, the line on the adjacent both sides of 1 strip defect line is normal line, then can come with normolineal each pixel data on these adjacent both sides the pixel data of defect line is carried out interpolation.But, producing in the situation of defect line for 3 continuous row pixel sections, be difficult to carry out interpolation as described above.The solid camera head that particularly has large-area light accepting part as described above, because the row selection is long with distribution, thereby it is high to produce the probability that breaks.
In above-mentioned patent documentation 1, propose to have the technology of attempting to solve such problem.Namely in the technology that above-mentioned patent documentation 1 proposes, obtain the mean value of whole pixel datas of abutment line of the adjacent that is positioned at defect line and the mean value of whole pixel datas that is positioned at the normal several lines of next adjacent.If the difference of these 2 mean values is more than the fixed value, judge that then abutment line also is defective, and revise the pixel data of this abutment line, and then, based on the revised value of the pixel data of this abutment line, come the pixel data of corrective pitting line.
In the technology that above-mentioned patent documentation 1 proposes, when correction is judged as the pixel data of abutment line of defective, obtain the mean value with respect to 2 pixel datas on the nearest normal line in the both sides of this abutment line, and with the pixel data of this mean value as this abutment line.In addition, when the pixel data of corrective pitting line, obtain the mean value with respect to 2 pixel datas on the abutment line of the both sides of this defect line, and with the pixel data of this mean value as this defect line.
But, in the technology that above-mentioned patent documentation 1 proposes, pixel data for corrective pitting line (and near the line that defect line, is judged as defective), the repeated multiple times average processing of obtaining 2 pixel datas, therefore, in revised image, near the resolution step-down defect line.
The present invention finishes in order to solve problem as described above, its purpose is the X ray CT device that a kind of solid camera head is provided and comprises it, even this solid state image device in the situation that row is selected to occur to break with distribution arbitrarily, also can obtain the structure of the image of high-res.
The method of dealing with problems
Solid state image device involved in the present invention: light accepting part, it has to consist of the integer more than the M(2) the above integer of row N(2) M * N the P of pixel section of mode two-dimensional arrangements of matrix of row 1,1～P M, NRead and use distribution L O, n, it is connected in to be contained in respectively and belongs to the following integer of the above N of n(1 in the light accepting part) and M the P of pixel section of row 1, n～P M, nRead and use switch; Signal-obtaining section, it is connected to read uses distribution L O, 1～L O, NRow selects to use distribution L V, m, it is connected in the capable N of m the P of pixel section that belong to that is contained in respectively in the light accepting part M, 1～P M, NRead and use switch; The row selection portion, it is connected in row and selects to use distribution L V, 1～L V, mAn end separately; And overflowing the section of preventing, it is connected in row and selects to use distribution L V, 1～L V, mThe other end separately.
Consist of the P of pixel section of light accepting part 1,1～P M, NContain respectively: photodiode, it produces the electric charge corresponding to the amount of incident intensity; And read and use switch, it is connected with this photodiode.Read and use distribution L O, nRead in the P of pixel section with switch via reading of correspondence 1, n～P M, nIn the photodiode that comprises of arbitrarily pixel section in the electric charge that produces.The temporary transient maintenance of signal-obtaining section is read with process and is used distribution L O, nAnd the magnitude of voltage of the amount correspondence of the electric charge of input afterwards, is exported the magnitude of voltage of this maintenance successively.Row selects to use distribution L V, mThis reads signal with the on-off action of switch and is sent to this and reads and use switch with control.The row selection portion will be controlled each P of pixel section in the light accepting part M, nControl signal is selected in reading with the going of on-off action of switch of comprising, and exports successively row at every row and selects to use distribution L V, m, and at this each P of pixel section that selects by this row to connect with distribution M, nMiddle closure reads uses switch, thereby makes at this each P of pixel section M, nThe electric charge that produces in the photodiode that comprises exports to read uses distribution L O, nOverflow the section of preventing and to control each P of pixel section in the light accepting part M, nWhat comprise reads the anti-stop signal that overflows with the on-off action of switch, and exports arbitrarily row to and selects to use distribution L V, m, and at this each P of pixel section that selects by this row to connect with distribution M, nMiddle closure reads uses switch, thereby prevents at this each P of pixel section M, nThe electric charge that produces in the photodiode that comprises is spilled over to outside this pixel section.
In solid camera head involved in the present invention, row selects to use distribution L V, 1～L V, MAn end separately be connected in capable selection portion, and select control signal from this row selection portion line of input.In addition, row selects to use distribution L V, 1～L V, MThe other end separately be connected in the section of preventing of overflowing, and overflow from this and to prevent that section's input overflowing from preventing stop signal.Row is selected control signal and overflowed anti-stop signal all is signals that read the on-off action of using switch that each the pixel section in the control light accepting part comprises.Wherein, selecting control signal from the row of row selection portion output is for the signal from each pixel section reading electric charges of light accepting part.With respect to this, from overflow the anti-stop signal of overflowing of the section of preventing output be in capable selections of light accepting part when row is selected to break with the distribution generation arbitrarily in the distribution, use switch by selecting at the row that is connected in this broken string to be arranged in the pixel section with distribution to read further from the pixel section closure of broken string position with respect to the row selection portion, thereby prevent that the electric charge that produces is spilled over to the signal outside this pixel section in the photodiode that this pixel section comprises.
In solid camera head involved in the present invention, preferably overflow the section of preventing and be expert at and select to use distribution L V, 1～L V, MIn when row selects with distribution broken string to occur arbitrarily, optionally will overflow the row that anti-stop signal exports this broken string to and select to use distribution.
In solid camera head involved in the present invention, preferably overflow the section of preventing and be expert at and select to use distribution L V, 1～L V, MIn when row selects with distribution broken string to occur arbitrarily, will overflow row that anti-stop signal exports respectively this broken string to and select with distribution and the row selection distribution that is adjacent.
Further, in solid camera head involved in the present invention, preferably overflow the section of preventing and export row to and select to use distribution L will overflowing anti-stop signal V, 1～L V, MIn when row selects use distribution arbitrarily, with select to select the identical moment of control signal with distribution output row from the row selection portion to this row, export and overflow anti-stop signal.
And X ray CT device involved in the present invention possesses: X ray efferent, solid camera head (solid camera head involved in the present invention), travel mechanism and image analysis section with structure as described above.The X ray efferent is exported X ray towards photographed object.Solid camera head receives from the output of X ray efferent and the X ray that arrives through photographed object and makes a video recording.Travel mechanism makes X ray efferent and solid camera head relatively move with respect to photographed object.Image analysis section inputs from the frame data of solid camera head output, and generates the faultage image of photographed object based on these frame data.
In addition, each embodiment involved in the present invention can further understand fully by following detailed explanation and accompanying drawing.This embodiment only is the example that represents for illustration, should not be considered as limiting the present invention.
In addition, further range of application of the present invention can understand from following detailed explanation.Yet detailed explanation and specific case representation preferred embodiment of the present invention only represent for illustration, and to those skilled in the art, by this detailed explanation, the various distortion in the scope of the invention and improvement all are self-explantory.
The effect of invention
According to solid camera head involved in the present invention, even in the situation that row is selected to occur to break with distribution arbitrarily, also can obtain the image of high-res.
Description of drawings
Fig. 1 is the figure of structure of an embodiment of expression solid camera head involved in the present invention.
Fig. 2 is the P of pixel section in the solid camera head shown in Figure 1 M, n, integrating circuit S nAnd holding circuit H nCircuit diagram separately.
Fig. 3 is the sequential chart of the action of explanation solid camera head shown in Figure 1.
Fig. 4 is the capable selection portion in the expression solid camera head shown in Figure 1 and the figure that overflows the 1st configuration example of the section of preventing.
Fig. 5 is the figure of the structure of the shift register that comprises of expression capable selection portion shown in Figure 4.
Fig. 6 is the capable selection portion in the expression solid camera head shown in Figure 1 and the figure that overflows the 2nd configuration example of the section of preventing.
Fig. 7 is the figure of structure of an embodiment of expression X ray CT device involved in the present invention.
The explanation of symbol
1 ... solid camera head, 10 ... light accepting part, 20 ... signal-obtaining section, 30 ... row selection portion, 40 ... column selection section, 50 ... overflow the section of preventing, 60 ... control part, P 1,1～P M, NPixel section, PD ... photodiode, SW 1Read with switch, S 1～S NIntegrating circuit, C 2Integration capacity cell, SW 2Discharge switch, A 2Amplifier, H 1～H NHolding circuit, C 3Keep with capacity cell, SW 31Input switch, SW 32Output switch, L V, mThe capable selection of m distribution, L H, nN column selection distribution, L O, nThe n row read with distribution, L RControl of discharge distribution, L HRetentive control distribution, L OutThe Voltage-output distribution.
Embodiment
Below, with reference to Fig. 1～7, to solid camera head involved in the present invention and comprise that each embodiment of its X ray CT device is described in detail.In addition, in the description of the drawings, to same position, same key element mark prosign, and the repetitive description thereof will be omitted.
Fig. 1 is the figure of structure of an embodiment of expression solid camera head involved in the present invention.This solid camera head shown in Figure 11 possesses: light accepting part 10, signal-obtaining section 20, row selection portion 30, column selection section 40, overflow the section of preventing 50 and control part 60.In addition, as in the situation of X ray flat board, overlapping on the sensitive surface 10 of solid camera head 1 have a scintillator panel.
Light accepting part 10 is by M * N the P of pixel section 1,1～P M, NTwo-dimensional arrangements becomes rectangular the forming of the capable N row of M.The P of pixel section M, nBe positioned at the capable n row of m.At this, M, N are respectively the integer more than 2, and m is each following integer of 1 above M, and n is each following integer of 1 above N.Each P of pixel section M, nBe the pixel section of PPS mode, and have common structure.
Belong to the capable N of m the P of pixel section M, 1～P M, NRespectively via the capable selection distribution L of m V, mAnd be connected in capable selection portion 30 and overflow the section of preventing 50.M the P of pixel section that belongs to the n row 1, n～P M, nOutput separately read via n row and use distribution L O, nAnd be connected in the integrating circuit S that signal-obtaining section 20 comprises n
Signal-obtaining section 20 comprises N integrating circuit S 1～S NAnd N holding circuit H 1～H NEach integrating circuit S nHas common structure.In addition, each holding circuit H nAlso has common structure.
Each integrating circuit S nHave to be connected in to read and use distribution L O, nInput.In addition, each integrating circuit S nStorage is input to the electric charge of this input, and will export holding circuit H to from output corresponding to the magnitude of voltage of this amount of charge stored nN integrating circuit S 1～S NRespectively by control of discharge distribution L RAnd be connected in control part 60.
Each holding circuit H nHas the integrating circuit of being connected in S nThe input of output.In addition, each holding circuit H nKeep being input to the magnitude of voltage of this input, and the magnitude of voltage that will keep exports output distribution L to from output OutN holding circuit H 1～H NRespectively via retentive control distribution L HAnd be connected in control part 60.In addition, each holding circuit H nVia n column selection distribution L H, nAnd be connected in control part 60.
Row selection portion 30 is connected in row and selects to use distribution L V, 1～L V, MAn end separately.In Fig. 1, row selection portion 30 is arranged at the left side of light accepting part 10.Row selection portion 30 is contained in each P of pixel section in the light accepting part 10 with control M, nRead with the row of the on-off action of switch select control signal Vsel(m), export successively row at every row and select to use distribution L V, mAccept this output and select to use distribution L via row V, mAnd switch closure is used in reading in the pixel section that connects, and uses distribution L thereby the electric charge that produces in the photodiode that this pixel section comprises is output to reading O, nM row selection control signal Vsel(1)～Vsel(M) become successively effective value.Row selection portion 30 comprises shift register, is used for M row selected control signal Vsel(1)～Vsel(M) export as effective value successively.
Column selection section 40 is with n column selection control signal Hsel(n) export n column selection distribution L to H, n, and with this n column selection control signal Hsel(n) to holding circuit H nGive.N column selection control signal Hsel(1)～Hsel(N) also become successively effective value.Column selection section 40 comprises shift register, is used for N column selection control signal Hsel(1)～Hsel(M) export as effective value successively.
Overflow the section of preventing 50 and be connected in row selection distribution L V, 1～L V, MThe other end separately.In Fig. 1, overflow the right that the section of preventing 50 is arranged at light accepting part 10.Overflow the section of preventing 50 and will control each P of pixel section in the light accepting part 10 M, nWhat comprise reads the anti-stop signal that overflows with the on-off action of switch, and exports arbitrarily row to and selects to use distribution L V, mAccept this output and select to use distribution L via row V, mAnd switch closure is used in reading in the pixel section that connects, thereby prevents that the electric charge that produces in the photodiode that this pixel section comprises is spilled over to outside this pixel section.
The action of control part 60 control solid camera heads 1 integral body.Control part 60 is given the control signal of their action of control respectively to row selection portion 30, column selection section 40 and overflow the section of preventing 50.Control part 60 exports discharge control signal Reset to control of discharge distribution L R, and this discharge control signal Reset is given to respectively N integrating circuit S 1～S NIn addition, control part 60 exports retentive control signal Hold to retentive control distribution L H, and this retentive control signal Hold is given to respectively N holding circuit H 1～H N
As previously discussed, control part 60 is via row selection portion 30 or overflow the section of preventing 50, and control is contained in respectively the capable N of m the P of pixel section that belong in the light accepting part 10 M, 1～P M, NRead and use interrupteur SW 1On-off action, and via row control part 40 or directly maintenance action and the output action of the magnitude of voltage in the control signal reading part 20.Thus, control part 60 makes and M * N the P of pixel section in being contained in respectively light accepting part 10 1,1～P M, NPhotodiode PD in the magnitude of voltage of amount correspondence of the electric charge that produces, as frame data and repeatedly from 20 outputs of signal-obtaining section.
Fig. 2 is the P of pixel section that solid camera head 1 shown in Figure 1 comprises M, n, integrating circuit S nAnd holding circuit H nCircuit diagram separately.In addition, Fig. 2 represents the P of pixel section M, nCircuit diagram represent M * N the P of pixel section 1,1～P M, N, expression integrating circuit S nCircuit diagram represent N integrating circuit S 1～S N, in addition, expression holding circuit H nCircuit diagram represent N holding circuit H 1～H NThe P of pixel section that namely the capable n of expression and m is listed as in Fig. 2 M, nAnd n row read and use distribution L O, nThe circuit part that is associated.
The P of pixel section M, nComprise photodiode PD and read and use interrupteur SW 1The anode terminal ground connection of photodiode PD, the cathode terminal of photodiode PD is used interrupteur SW via reading 1Read and use distribution L and be connected in n row O, nPhotodiode PD produces the electric charge corresponding to the amount of incident intensity, and the charge storage that will produce is in junction capacitance section.Read and use interrupteur SW 1From going selection portion 30 via the capable selection distribution L of m V, mAnd be endowed the capable selection of m control signal.The capable selection of m control signal is to indicate the capable N of m the P of pixel section that belong to that is contained in respectively in the light accepting part 10 M, 1～P M, NInterrupteur SW is used in reading of comprising separately 1The signal of telecommunication of on-off action.
At the P of this pixel section M, nIn, at the capable selection of m control signal Vsel(m) when being low level, reading and use interrupteur SW 1Open.Thus, the electric charge that produces in photodiode PD does not read to the n row and uses distribution L O, nOutput, and be stored in junction capacitance section.On the other hand, at the capable selection of m control signal Vsel(m) when being high level, reading and use interrupteur SW 1Closed.In the case, the electric charge that hereto produces and be stored in junction capacitance section in photodiode PD is used interrupteur SW through reading 1Use distribution L and read to n row O, nOutput.
The n row read uses distribution L O, nBe connected in M the P of pixel section that belongs to the n row that is contained in respectively in the light accepting part 10 1, n～P M, nRead and use interrupteur SW 1The n row read uses distribution L O, nUse interrupteur SW via being contained in reading of this pixel section 1, read in and be contained in M the P of pixel section 1, n～P M, nIn the photodiode PD of arbitrarily pixel section in the electric charge that produces, and to integrating circuit S nPass on.
Integrating circuit S nComprise: amplifier A 2, integration capacity cell C 2And discharge interrupteur SW 2Integration capacity cell C 2And discharge interrupteur SW 2Under the state that is connected in parallel with each other, be located at amplifier A 2Input terminal and lead-out terminal between.Amplifier A 2Input terminal be connected in n row and read and use distribution L O, nThe discharge interrupteur SW 2From control part 60 process control of discharge distribution L RAnd be endowed discharge control signal Reset.Discharge control signal Reset indicates to be contained in respectively N integrating circuit S 1～S NThe discharge interrupteur SW 2The signal of telecommunication of on-off action.
At this integrating circuit S nIn, when discharge control signal Reset is high level, closed discharge interrupteur SW 2Thus, integration capacity cell C 2Discharge, and will be from integrating circuit S nThe magnitude of voltage initialization of output.On the other hand, when discharge control signal Reset is low level, open the discharge interrupteur SW 2In the case, input to the charge storage of input in integration capacity cell C 2In, and from integrating circuit S nOutput is corresponding to the magnitude of voltage of this amount of charge stored.
Holding circuit H nComprise: the input interrupteur SW 31, output uses interrupteur SW 32And maintenance capacity cell C 3Keep using capacity cell C 3An end ground connection.Keep using capacity cell C 3The other end via the input interrupteur SW 31And be connected in integrating circuit S nOutput, and via the output interrupteur SW 32And be connected in Voltage-output distribution L OutThe input interrupteur SW 31From control part 60 via retentive control distribution L HAnd be endowed retentive control signal Hold.Retentive control signal Hold indicates to be contained in respectively N holding circuit H 1～H NThe input interrupteur SW 31The signal of telecommunication of on-off action.The output interrupteur SW 32From column selection section 40 via n column selection distribution L H, nAnd be endowed n column selection control signal Hsel(n).N column selection control signal Hsel(n) be that indication is contained in holding circuit H nThe output interrupteur SW 32The signal of telecommunication of on-off action.
At this holding circuit H nIn, when retentive control signal Hold transfers low level to from high level, the input interrupteur SW 31Transfer open mode to from closure state.At this moment, the magnitude of voltage that inputs to input is held in and keeps using capacity cell C 3In addition, at n column selection control signal Hsel(n) when being high level, the output interrupteur SW 32Closed.In the case, remain in maintenance capacity cell C 3Magnitude of voltage to Voltage-output distribution L OutOutput.
Control part 60 is being exported corresponding to the capable N of m the P of pixel section that belong in the light accepting part 10 M, 1～P M, NSeparately be subjected to the magnitude of voltage of luminous intensity the time, output discharge control signal Reset indicates N integrating circuit S 1～S NThe discharge interrupteur SW that comprises separately 2Opening after temporary transient closure, thereafter, control part 60 outputs are from capable selections of the m control signal Vsel(m of row selection portion 30 outputs again), indicate within whole specified time limit the capable N of m the P of pixel section that belong in the closed light accepting part 10 M, 1～P M, NInterrupteur SW is used in reading of comprising separately 1 Control part 60 is exported retentive control signal Hold within this specified time limit, indicate N holding circuit H 1～H NThe input interrupteur SW that comprises separately 31Transfer open mode to from closure state.Then, control part 60 is after this specified time limit, and output is from the column selection control signal Hsel(1 of column selection section 40 outputs)～Hsel(N), indicate N holding circuit H 1～H NThe output interrupteur SW that comprises separately 32Closed in successively only during certain.Control part 60 carries out above such control successively at each row.
Then, the action of solid camera head involved in the present invention 1 described.In this solid camera head 1, under the control of control part 60, M row selected control signal Vsel(1)～Vsel(M), a N column selection control signal Hsel(1)～Hsel(N), discharge control signal Reset and retentive control signal Hold carry out the level variation with the sequential of regulation respectively, thereby can make a video recording and obtain frame data the picture of the light that incides sensitive surface 10.
Fig. 3 is the sequential chart of the action of explanation solid camera head 1 involved in the present invention.In this Fig. 3, expression has: (a) indication is contained in respectively N integrating circuit S 1～S NThe discharge interrupteur SW 2The discharge control signal Reset of on-off action; (b) indication is contained in respectively the N that belongs to the 1st row the P of pixel section in the light accepting part 10 1,1～P 1, NRead and use interrupteur SW 1The 1st row of on-off action select control signal Vsel(1); (c) indication is contained in respectively the N that belongs to the 2nd row the P of pixel section in the light accepting part 10 2,1～P 2, NRead and use interrupteur SW 1The 2nd row of on-off action select control signal Vsel(2); And (d) indication is contained in respectively N holding circuit H 1～H NThe input interrupteur SW 31The retentive control signal Hold of on-off action.
And then in this Fig. 3, then expression has: (e) indication is contained in holding circuit H 1The output interrupteur SW 32The 1st column selection control signal Hsel(1 of on-off action); (f) indication is contained in holding circuit H 2The output interrupteur SW 32The 2nd column selection control signal Hsel(2 of on-off action); (g) indication is contained in holding circuit H 3The output interrupteur SW 32The 3rd column selection control signal Hsel(3 of on-off action); (h) indication is contained in holding circuit H nThe output interrupteur SW 32The n column selection control signal Hsel(n of on-off action); And (i) indication is contained in holding circuit H NThe output interrupteur SW 32The N column selection control signal Hsel(N of on-off action).
Be contained in respectively N the P of pixel section that belongs to the 1st row 1,1～P 1, NPhotodiode PD in produce and be stored in the reading of electric charge of junction capacitance section, carry out as described below.
Namely at moment t 10Before, M row selection control signal Vsel(1)～Vsel(M), a N column selection control signal Hsel(1)～Hsel(N), discharge control signal Reset and retentive control signal Hold become respectively low level.From moment t 10To moment t 11During, export control of discharge distribution L to from control part 60 RDischarge control signal Reset become high level, thus, respectively at N integrating circuit S 1～S NIn, the discharge interrupteur SW 2Closed (integration capacity cell C 2Be discharged).In addition, from moment t 11Moment t afterwards 12To moment t 15During, export the 1st row to from row selection portion 30 and select to use distribution L V, 1The 1st row select control signal Vsel(1) become high level, thus, be contained in respectively the N that belongs to the 1st row the P of pixel section in the light accepting part 10 1,1～P 1, NRead and use interrupteur SW 1Closed.
During (t 12～t 15) in, from moment t 13To moment t 14During, export retentive control distribution L to from control part 60 HRetentive control signal Hold become high level.In the case, at N holding circuit H 1～H NEach in, interrupteur SW is used in input 31Closed.
During (t 12～t 15) in, be contained in each P of pixel section of the 1st row 1, nRead and use interrupteur SW 1Closed.Each integrating circuit S nThe discharge interrupteur SW 2Open, therefore, hereto at each P of pixel section 1, nPhotodiode PD in produce and be stored in the electric charge of junction capacitance section, through the P of this pixel section 1, nRead and use interrupteur SW 1And n row read and use distribution L O, nAnd transfer to integrating circuit S nIntegration capacity cell C 2In and the storage.Then, from integrating circuit S nOutput output corresponding to being stored in each integrating circuit S nIntegration capacity cell C 2The magnitude of voltage of amount of electric charge.
During (t 12～t 15) interior moment t 14, retentive control signal Hold transfers low level to from high level.Thus, at N holding circuit H 1～H NEach in, interrupteur SW is used in input 31Transfer open mode to from closure state.At this moment, from integrating circuit S nOutput output and input to holding circuit H nThe magnitude of voltage of input be held in and keep using capacity cell C 3
Then, during (t 12～t 15) afterwards, export column selection distribution L to from column selection section 40 H, 1～L H, NColumn selection control signal Hsel(1)～Hsel(N) only during certain, become successively high level.At this moment, be contained in respectively N holding circuit H 1～H NThe output interrupteur SW 32Only closed successively during necessarily.If output interrupteur SW 32Closure then remains in each holding circuit H nMaintenance capacity cell C 3Magnitude of voltage use interrupteur SW through output 32To Voltage-output distribution L OutSuccessively output.This is to Voltage-output distribution L OutThe magnitude of voltage V of output OutTo represent to be contained in respectively N the P of pixel section that belongs to the 1st row 1,1～P 1, NPhotodiode PD in the magnitude of voltage that is subjected to luminous intensity.
Then, be contained in respectively N the P of pixel section that belongs to the 2nd row 2,1～P 2, NPhotodiode PD in produce and be stored in the reading of electric charge of junction capacitance section, carry out as described below.
Namely from moment t 20To moment t 21During, export control of discharge distribution L to from control part 60 RDischarge control signal Reset become high level.Thus, at N integrating circuit S 1～S NEach in, interrupteur SW is used in discharge 2Closure, integration capacity cell C 2Discharge.In addition, from moment t 21Moment t afterwards 22To moment t 25During, export the 2nd row to from row selection portion 30 and select to use distribution L V, 2The 2nd row select control signal Vsel(2) become high level.Thus, be contained in respectively the N that belongs to the 2nd row the P of pixel section in the light accepting part 10 2,1～P 2, NRead and use interrupteur SW 1Closed.
During (t 22～t 25) in, from moment t 23To moment t 24During, export retentive control distribution L to from control part 60 HRetentive control signal Hold become high level.In the case, at N holding circuit H 1～H NEach in, interrupteur SW is used in input 31Closed.
Then, during (t 22～t 25) afterwards, export column selection distribution L to from column selection section 40 H, 1～L H, NColumn selection control signal Hsel(1)～Hsel(N) only during certain, become successively high level.Thus, be contained in respectively N holding circuit H 1～H NThe output interrupteur SW 32Only closed successively during necessarily.
As previously discussed, expression is contained in respectively N the P of pixel section that belongs to the 2nd row 2,1～P 2, NPhotodiode PD in the magnitude of voltage V that is subjected to luminous intensity OutTo Voltage-output distribution L OutOutput.
Then above such action about the 1st row and the 2nd row, after, M is capable to carry out same action by walking to from the 3rd, thus the frame data of the image that the acquisition expression is obtained by 1 shooting.In addition, if about the capable release of M, so again carry out same action from the 1st row, obtain the frame data of the Next image of expression.Like this, by repeatedly carrying out same action with some cycles, thus the magnitude of voltage V of the two-dimensional intensity distribution of the picture of the light that expression light accepting part 10 receives OutBe output to Voltage-output distribution L Out(repeatedly obtaining frame data).
, belong to the capable N of m the P of pixel section being contained in respectively M, 1～P M, NRead and use interrupteur SW 1During closed, at each capable P of pixel section of m M, nPhotodiode PD in produce and be stored in the electric charge of junction capacitance section, through the P of this pixel section M, nRead and use interrupteur SW 1And n row read and use distribution L O, n, transfer to integrating circuit S nIntegration capacity cell C 2At this moment, belong to the capable P of pixel section of m M, nThe stored charge of junction capacitance section of photodiode PD be initialised.
But, at the capable selection distribution L of certain m V, mPosition halfway occurs to belong to the capable N of this m the P of pixel section in the situation of broken string M, 1～P M, NIn be positioned at respect to the row selection portion 30 further from the broken string position pixel section, from the row selection portion 30 be not transmitted the capable selection of m control signal Vsel(m), read and use interrupteur SW 1Still open in the same old way.Therefore, because can't be to integrating circuit S nPass on electric charge, thereby can't carry out passing on the initialization of stored charge of junction capacitance section of the photodiode PD that obtains by this electric charge.Under these circumstances, in these pixel sections, the electric charge that produces in photodiode corresponding to light incident is stored in the junction capacitance section of this photodiode always.In the case, when surpassing saturation level, overflow to the pixel section of the row on adjacent both sides, thereby produce defect line about the pixel section of 3 continuous row.
This solid camera head 1 possesses the section of preventing 50 of overflowing in order to tackle such problem.Be connected in row with respect to row selection portion 30 and select to use distribution L V, 1～L V, MAn end separately, overflow the section of preventing 50 and be connected in row and select to use distribution L V, 1～L V, MThe other end separately.The i.e. capable selection distribution L of m V, mThe selection portion of being expert at 30 and overflow between the section of preventing 50 is extended.In addition, the capable selection distribution L of m V, mBe connected in the capable N of m the P of pixel section that belong in the light accepting part 10 M, 1～P M, NInterrupteur SW is used in reading of comprising separately 1, and read to these and to use interrupteur SW 1These read transfer control and use interrupteur SW 1The signal of on-off action.Control is read and is used interrupteur SW 1The signal of on-off action, select control signal Vsel(m from row selection portion 30 as row) and be endowed, from overflowing the section of preventing 50 as overflowing anti-stop signal and being endowed.
Owing to export the capable selection distribution L of m to from overflowing the anti-stop signal of overflowing of the section's of preventing 50 outputs V, m, therefore at the control pixel P of section M, nRead and use interrupteur SW 1The aspect of on-off action, and select control signal Vsel(1 from the row of row selection portion 30 outputs)～Vsel(M) identical.
Yet, select control signal Vsel(1 from the row of row selection portion 30 output)～Vsel(M) be for each P of pixel section from light accepting part 10 M, nThe signal of telecommunication of reading electric charges.With respect to this, be for selecting to use distribution L at light accepting part 10 row from overflowing the anti-stop signal of overflowing of the section's of preventing 50 outputs V, 1～L V, MIn when row selects with distribution broken string to occur arbitrarily, in the row that is connected in this broken string is selected pixel section with distribution, be arranged in respect to the pixel section of row selection portion 30 further from the position of breaking, closure reads uses interrupteur SW 1Thereby, prevent that the electric charge that produces is spilled over to the signal of telecommunication outside this pixel section in the photodiode PD that this pixel section comprises.
Therefore, select control signal Vsel(1 from the row of row selection portion 30 outputs)～Vsel(M), export with some cycles successively at every row.With respect to this, the row that exports this broken string from overflowing overflowing of the section of preventing 50 output to is selected use distribution with preventing signal-selectivity, perhaps, the row that exports respectively this broken string to select with distribution and be adjacent go the selection distribution.There is no need to export to the not row selection distribution of broken string from overflowing the anti-stop signal of overflowing of the section's of preventing 50 outputs.
From overflow the anti-stop signal of overflowing of the section of preventing 50 output also can from select from row selection portion 30 to row to select with the different moment output of signal with distribution output row.For example, be preferably will going from row selection portion 30 select control signal Vsel(1)～Vsel(M) whole magnitude of voltage V of output and a frame OutAfter signal-obtaining section 20 output and the magnitude of voltage V of next frame OutFrom the 20 output moment before of signal-obtaining section.In this case, select to occur in the situation of broken string with distribution at many row, preferably select to use distribution with respect to these many row, overflow anti-stop signal from overflowing the section's of preventing 50 outputs simultaneously.
In addition, from overflow the anti-stop signal of overflowing of the section of preventing 50 output also can with select to select the identical moment output of control signal with distribution output row from row selection portion 30 to row.Namely for the capable selection distribution L of m that breaks V, m, with select control signal Vsel(m from row selection portion 30 output row) identical moment in the moment, overflow anti-stop signal from overflowing the section's of preventing 50 outputs.In this case, for the capable selection distribution L of the m that is connected in broken string V, mN the P of pixel section M, 1～P M, NIn, be positioned at the pixel section with respect to row selection portion 30 more close broken string positions, be endowed row from row selection portion 30 and select control signal Vsel(m).In addition, in the identical therewith moment, for being positioned at respect to the pixel section of row selection portion 30 further from the broken string position, be endowed and overflow anti-stop signal from overflowing the section of preventing 50.
Therefore, at the capable selection distribution L of whole m that is connected in broken string V, mN the P of pixel section M, 1～P M, NIn, read and use interrupteur SW 1Closed in the identical moment.Therefore, hereto at each P of pixel section M, nPhotodiode PD in produce and be stored in the electric charge of junction capacitance section, via the P of this pixel section M, nRead and use interrupteur SW 1And n row read and use distribution L O, nAnd quilt is transferred to signal-obtaining section 20.Then, expression belongs to the capable N of m the P of pixel section M, 1～P M, NThe magnitude of voltage V that is subjected to luminous intensity among the photodiode PD that comprises separately Out, export Voltage-output distribution L to from signal-obtaining section 20 Out
Like this, in this solid camera head 1, in the situation that row is selected to occur to break with distribution arbitrarily, row for this broken string selects to use distribution, from the section of preventing 50 of overflowing of the opposition side that is arranged at capable selection portion 30, the pixel section that is not connected with row selection portion 30 because of broken string given overflow anti-stop signal.Thus, though because of broken string not with the pixel section that is connected of row selection portion 30 in, utilization is read and is used interrupteur SW from overflowing the anti-stop signal that overflows that the section of preventing 50 gives 1Also closed.Its result injects and produce and be stored in the electric charge of junction capacitance section in photodiode corresponding to light, discharges before the level that reaches capacity, and can not be spilled over to adjacent pixel section.Therefore, in this solid camera head 1, must not carry out the correcting process as existing solid camera head, can obtain the image of high-res.
Particularly with select to select the identical moment in moment of control signal with distribution output row from row selection portion 30 to row, select to overflow in the situation of anti-stop signal with distribution output to this row from overflowing the section of preventing 50, overflow from this and prevent that the pixel section that stop signal arrives also can reading electric charges.If this row selects with the broken string of distribution 1 place is only arranged, then with identical without the situation of broken string, the magnitude of voltage V of the two-dimensional intensity distribution of the picture of the light that expression light accepting part 10 receives OutExport Voltage-output distribution L to from signal-obtaining section 20 Out
Then, the capable selection portion 30 that solid camera head involved in the present invention 1 is comprised and overflow the section of preventing 50 configuration example separately and describe.
Fig. 4 is the figure that expression is gone selection portion 30 and overflowed the 1st configuration example of the section of preventing 50.In this 1st configuration example shown in Figure 4, comprise P shift register 31 as the capable selection portion 30A of the capable selection portion 30 of Fig. 1 1～31 PIn addition, the section 50A of preventing that overflows as the section of preventing 50 of overflowing of Fig. 1 comprises P shift register 51 1～51 PEach shift register 31 pAnd each shift register 51 pHave common structure, as shown in Figure 5, be the shift register of Q position.At this, P, Q are the integer more than 2, and p is the following integer of 1 above P, in addition, below the q that occurs be integer below the 1 above Q.P equates with line number M with the long-pending of Q.
Fig. 5 is expression shift register 31 pThe figure of structure.Shift register 31 pQ trigger (flip-flop) 32 1～32 QBe connected in series.Shift register 31 pThe trigger 32 that comprises qLead-out terminal be connected in the capable selection distribution L of m V, (p-1) Q+qAt shift register 31 pFirst section the trigger 32 that comprises 1Input terminal on, from control part 60 input commencing signal Start(p is arranged).From shift register 31 pThe trigger 32 of the terminal section that comprises QLead-out terminal, to control part 60 end of output signal End(p).
At shift register 31 pIn, if commencing signal Start(p) pulse input to the just trigger 32 of section from control part 60 1Input terminal, then with input to respectively Q trigger 32 1～32 QClock signal synchronization, from Q trigger 32 1～32 QLead-out terminal is separately exported successively pulse and is selected control signal as row.Then, from the trigger 32 of terminal section QThe pulse of lead-out terminal output as end signal End(p) also export control part 60 to.
Among the selection portion of the being expert at 30A, to P shift register 31 1～31 PInput successively commencing signal Start(p) pulse, and select to select control signal Vsel(1 with distribution output row to row successively with some cycles)～Vsel(M).
Prevent among the 50A of section overflowing, also can be to P shift register 51 1～51 PInput successively commencing signal Start(p) pulse, and select to overflow anti-stop signal with distribution output to each row.In addition, also can be only to P shift register 51 1～51 PIn be connected in broken string row select shift register 51 with distribution p, input commencing signal Start(p) pulse.In the former situation, because power consumption is little and preferred.In addition, in the latter case, owing to select voluntarily to select control signal with the row at the two ends of distribution and overflow produces in the situation that the input timing separately of anti-stop signal departs to row selection portion 30A or to overflow the impact of the inrush current that prevents the 50A of section little, thereby put also preferred at this.
Fig. 6 is the figure that expression is gone selection portion 30 and overflowed the 2nd configuration example of the section of preventing 50.In the 2nd configuration example of Fig. 6, comprise shift register 33 and M digit buffer 34 of M position as the capable selection portion 30B of the capable selection portion 30 of Fig. 1 1～34 MIn addition, as shift register 53 and M the 3 attitude buffers 54 that the section 50B of preventing comprises the M position that overflow of the section of preventing 50 of overflowing of Fig. 1 1～54 M
Among the selection portion of the being expert at 30B, if from the pulse of control part 60 input commencing signals, then with clock signal synchronization, row is selected control signal Vsel(1)～Vsel(M) export with some cycles successively.Row is selected control signal Vsel(m) through digit buffer 34 mAnd export the capable selection distribution L of m to V, m
Prevent among the 50B of section overflowing, if from the pulse of control part 60 input commencing signals, then with clock signal synchronization, overflow anti-stop signal and export with some cycles successively at every row.Corresponding to the capable selection distribution L of m V, mAnd the anti-stop signal that overflows of output is input to 3 attitude buffers 54 mIf the enabling signal Enable that gives from control part 60 is high level, then from 3 attitude buffers 54 mExport the capable selection distribution L of m to V, mYet, if enabling signal Enable is low level, 3 attitude buffers 54 mLead-out terminal be made as high impedance status.
Therefore, overflow at this and to prevent among the 50B of section, can be optionally the row that overflows anti-stop signal and export to broken string be selected to use distribution.In addition, by making the 3 attitude buffers 54 of selecting to use distribution corresponding to the row that does not break mLead-out terminal be high impedance status, thereby to row selection portion 30B or to overflow the impact of the inrush current that prevents the 50B of section little.
Solid camera head 1(Fig. 1 involved in the present invention) can in X ray CT device, suitably use.Therefore, below, an embodiment of the X ray CT device that possesses solid camera head involved in the present invention 1 is described.
Fig. 7 is the figure of structure of an embodiment of expression X ray CT device involved in the present invention.In this X ray CT device shown in Figure 7 100, x-ray source 106 produces X ray towards photographed object.The radiation field of the X ray that produces from x-ray source 106 is controlled by 1 slit plate 106b.X-ray source 106 is built-in with X-ray tube, adjusts by the condition to tube voltage, tube current and the conduction time etc. of this X-ray tube, controls the x-ray bombardment amount towards photographed object.X ray image pick-up device 107 is built-in with the CMOS solid camera head of a plurality of pixel section that possesses two-dimensional arrangements, and the X ray by photographed object is looked like to detect.In the place ahead of X ray image pick-up device 107, be provided with 2 slit plate 107a of restriction X ray incident area.
Turning arm 104 is rotated it so that x-ray source 106 and X ray image pick-up device 107 relative modes keep under the state of x-ray source 106 and X ray image pick-up device 107 around photographed object when orthopantomography.In addition, be provided with slide mechanism 113, this slide mechanism 113 is used for making X ray image pick-up device 107 with respect to photographed object and line shifting when linear tomography.Turning arm 104 is driven by the arm motor 110 that consists of rotation platform, and its anglec of rotation is detected by angular transducer 112.In addition, arm motor 110 is equipped on the movable part of XY platform 114, can adjust arbitrarily pivot in horizontal plane.
Be transformed to the numerical data of for example 10 (=1024 rank (level)) by AD converter 120 from the picture signal of X ray image pick-up device 107 outputs.Then, this numerical data temporarily is stored into the CPU(central processing unit) 121, afterwards, be stored in the frame memory 122.By the view data that is stored in the frame memory 122, regenerate along the faultage image of fault plane arbitrarily by the calculation process of regulation.The faultage image of regeneration is output to video memory 124, is transformed into analog signal by DA converter 125.Afterwards, the faultage image that is transformed into analog signal is by the CRT(cathode ray tube) etc. image displaying part 126 show, and be provided for various diagnosis.
Be connected with signal at CPU121 and process required working storage 123, and then be connected with the guidance panel 119 that possesses panel-switch and x-ray bombardment switch etc.In addition, the slit control circuit 115 that CPU121 is connected to motor drive circuit 111 that arm motor 110 is driven, control the opening scope of 1 slit plate 106b and 2 slit plate 107a, 116 and X ray control circuit 118 that x-ray source 106 is controlled, and then output is used for clock signal that X ray image pick-up device 107 is driven.
X ray control circuit 118 can based on the signal of being made a video recording by X ray image pick-up device 107, come FEEDBACK CONTROL towards the x-ray bombardment amount of photographed object.
In the X ray CT device 100 that consists of in the above-described manner, X ray image pick-up device 107 is equivalent to have an embodiment of the solid camera head 1(of structure as described above solid camera head involved in the present invention) light accepting part 10, signal-obtaining section 20, row selection portion 30, column selection section 40, overflow the section of preventing 50 and control part 60, and be provided with scintillator panel in the front of light accepting part 10.
X ray CT device 100 possesses the solid camera head 1 with structure shown in Figure 1, thereby even also can obtain the faultage image of high-res near defect line.Especially in X ray CT device, owing to obtain continuously the frame data of a large amount of (for example 300) between short-term, and can in each frame, change the incident light quantity of the light accepting part 10 of solid camera head 1.Therefore, the amount that is spilled over to the electric charge of the pixel section on the abutment line of the pixel section on defect line can change each frame.In such X ray CT device, by possessing this solid camera head 1, thereby even select to occur also can obtain the image of high-res in the situation of broken string with distribution at row arbitrarily.
By above explanation of the present invention, the present invention can be done various distortion.Such distortion can not be regarded as a departure from thought of the present invention and scope, for all those skilled in the art, all is contained in the claim scope as self-explantory improvement.

Claims (4)

1. a solid camera head is characterized in that,
Possess:
Light accepting part, it has to consist of M * N the P of pixel section by the mode two-dimensional arrangements of the matrix of the capable N row of M of the integer M more than 2 and 2 above Integer N regulations 1,1～P M, N, and the described pixel P of section 1,1～P M, NComprise respectively generation corresponding to the photodiode of the electric charge of the amount of incident intensity and be connected in reading of this photodiode and use switch;
Read and use distribution L O, n, it is connected in M the P of pixel section of the n row of being stipulated by the Integer n below the 1 above N belonging in the row that are contained in respectively described light accepting part 1, n～P M, nRead and use switch, and read in switch via reading of correspondence and to be contained in the described pixel P of section 1, n～P M, nIn the photodiode of arbitrarily pixel section in the electric charge that produces;
Signal-obtaining section, it is connected to described reading and uses distribution L O, 1～L O, N, and temporary transient maintenance is used distribution L with described the reading of process O, nAnd the magnitude of voltage of the amount correspondence of the electric charge of input afterwards, is exported the magnitude of voltage of this maintenance successively;
Row selects to use distribution L V, m, it is connected in the capable N of m the P of pixel section that belong to that is contained in respectively in the described light accepting part M, 1～P M, NRead and use switch, this reads signal with the on-off action of switch and is sent to this and reads and use switch with control;
The row selection portion, it is connected in described row and selects to use distribution L V, 1～L V, MAn end separately, control is contained in each P of pixel section in the described light accepting part M, nRead with the row of the on-off action of switch and select control signal, export successively row at every row and select to use distribution L V, m, at this each P of pixel section that selects by this row to connect with distribution M, nMiddle closure reads uses switch, is being contained in this each P of pixel section thereby make M, nPhotodiode in the electric charge that produces export to read and use distribution L O, n
Overflow the section of preventing, it is connected in described row and selects to use distribution L V, 1～L V, MThe other end separately, control is contained in each P of pixel section in the described light accepting part M, nRead the anti-stop signal that overflows with the on-off action of switch, export arbitrarily row to and select to use distribution L V, m, at this each P of pixel section that selects by this row to connect with distribution M, nMiddle closure reads uses switch, thereby prevents from being contained in this each P of pixel section M, nPhotodiode in the electric charge that produces be spilled over to outside this pixel section;
Column selection section, indication temporarily remains in the magnitude of voltage that should export in the magnitude of voltage of described signal-obtaining section; And
Control part is given control signal for their action of control to described row selection portion, the described section of preventing and the described column selection section of overflowing respectively.
2. solid camera head as claimed in claim 1 is characterized in that,
The described section of preventing of overflowing is preventing that with described overflowing stop signal exports row to and selects to use distribution L V, 1～L V, MIn when row selects use distribution arbitrarily, with select to export the described anti-stop signal that overflows with the identical moment of distribution output row selection control signal from described row selection portion to this row.
3. such as claim 1 or 2 described solid camera heads, it is characterized in that,
Described row selection portion has and is connected to described row and selects to use distribution L V, 1～L V, MA plurality of the 1st buffers of an end separately,
The described section of preventing of overflowing has and is connected to described row and selects to use distribution L V, 1～L V, MA plurality of the 2nd buffers of the other end separately.
4. an X ray CT device is characterized in that,
Comprise:
The X ray efferent, it exports X ray towards photographed object;
Such as the described solid camera head of any one in the claim 1～3, it receives from described X ray efferent output and the X ray that arrives through described photographed object and makes a video recording;
Travel mechanism, it makes described X ray efferent and described solid camera head relatively move with respect to described photographed object; And
Image analysis section, it is inputted from the frame data of described solid camera head output, and generates the faultage image of described photographed object based on these frame data.
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