CN103378209B - A kind of hybrid integrated photo-detector and preparation method thereof - Google Patents
A kind of hybrid integrated photo-detector and preparation method thereof Download PDFInfo
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- CN103378209B CN103378209B CN201210147762.5A CN201210147762A CN103378209B CN 103378209 B CN103378209 B CN 103378209B CN 201210147762 A CN201210147762 A CN 201210147762A CN 103378209 B CN103378209 B CN 103378209B
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- coating
- detector
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- substrate
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Abstract
The invention discloses a kind of hybrid integrated photo-detector and preparation method thereof, relate to optical communication field.Described hybrid integrated photo-detector comprises: the deielectric-coating mode filter be bonded together and InGaAs photodiode; Described deielectric-coating mode filter comprises substrate, and is arranged on the media coating of substrate face and is arranged on the antireflective coating of described substrate back; Described substrate adopts Si, InP or GaAs; Described media coating is vertical multi-cavity structure.Described hybrid integrated photo-detector and preparation method thereof, adopts Si, InP or GaAs substrate, is conducive to or Passive Optical Components active with other and carries out integrated; InGaAs photodiode and deielectric-coating mode filter is adopted to be bonded together, described hybrid integrated photo-detector is made to have the narrow band spectrum response of better flat-top steep limit, improve passband effect, can be used for the application that channel spacing is the dense wave division multipurpose reception of 100GHz, reduce communications cost.
Description
Technical field
The present invention relates to technical field of photo communication, particularly a kind of hybrid integrated photo-detector and preparation method thereof.
Background technology
Adopt wavelength-division multiplex technique can realize making full use of of optical network band width in fiber optic communication systems.Dense wave division multiplexer part is as the core component of wavelength-division multiplex system, and its characteristic quality determines the performance of whole system to a great extent.
Different according to manufacture method, dense wave division multipurpose receiving device can be divided into several types, and photo-detector is wherein a kind of.
But traditional dielectric film filter still also exists certain defect, optical glass or pottery is especially adopted to be unfavorable for carrying out integrated with other active/passive optical devices as substrate.In addition, in today of close wavelength-division multiplex technology develop rapidly, optical detection is proposed and upgrades and higher requirement.Close wavelength-division multiplex technology requires that the bandwidth of filter is narrower, suggestion according to ITU-T (International Telecommunication Union's telecommunication standardsization tissue) requires that bandwidth granularity should be 0.4nm, and response curve is that the steep limit of flat-top effectively could hold more channel capacity under identical bandwidth.
Summary of the invention
(1) technical problem that will solve
The technical problem to be solved in the present invention is: how to provide a kind of hybrid integrated photo-detector and preparation method thereof, so that photo-detector and other active or Passive Optical Components carry out integrated, and improve passband effect, the dense wave division multipurpose being 100GHz for channel spacing receives the photo-detector providing a kind of function admirable.
(2) technical scheme
For solving the problems of the technologies described above, the invention provides a kind of hybrid integrated photo-detector, it comprises: the deielectric-coating mode filter be bonded together and InGaAs photodiode; Described deielectric-coating mode filter comprises substrate, and is arranged on the media coating of described substrate face and is arranged on the antireflective coating of described substrate back; Described substrate adopts Si, InP or GaAs; Described media coating is vertical multi-cavity structure.
Preferably, described media coating is vertical five cavity configurations, and two walls up and down in each chamber are provided with reflectance coating, is provided with a wall between adjacent two chambeies.
Preferably, the structural formula of described media coating and described substrate is as follows:
Sub/(HL)
N1H(5L)H(LH)
3L(HL)
3H(5L)H(LH)
2L(HL)
2H(7L)H(LH)
4L(HL)
4H(7L)(HL)
N2H/Air；
Wherein, Sub represents described substrate; H represents Ta
2o
5; L represents SiO
2; N1 represents the first coefficient, and value is 6,7 or 8; N2 represents the second coefficient, and value is 5,6 or 7.
Preferably, the reflectivity of described reflectance coating is more than or equal to 99%.
Preferably, the optical thickness in described chamber is λ
0the integral multiple of/2, λ
0equal 1550nm.
Preferably, the structural formula of described antireflective coating and described substrate is as follows:
Air/0.404H1.21L/Sub；
Wherein, Sub represents described substrate; H represents Ta
2o
5; L represents SiO
2.
Preferably, the structure of described InGaAs photodiode is followed successively by from bottom to up: InP resilient coating, an InGaAs inhibition of corrosion layer, InPn type contact electrode, the 2nd InGaAs inhibition of corrosion layer, an InP wall, InGaAs absorbed layer, the 2nd InP wall and InGaAsp type contact electrode; And undermost described InP resilient coating and described media coating phase bonding.
The present invention also provides a kind of preparation method of hybrid integrated photo-detector, and it comprises step:
A: at the front somatomedin rete of substrate; Described substrate adopts Si, InP or GaAs; Described media coating is vertical multi-cavity structure;
B: at the back side of described substrate growth antireflective coating, obtain deielectric-coating mode filter epitaxial wafer;
C: described deielectric-coating mode filter epitaxial wafer is cleaved into deielectric-coating mode filter;
D: InGaAs photodiode and described deielectric-coating mode filter are bonded together, prepare hybrid integrated photo-detector.
Preferably, the structural formula of described media coating and described substrate is as follows:
Sub/(HL)
N1H(5L)H(LH)
3L(HL)
3H(5L)H(LH)
2L(HL)
2H(7L)H(LH)
4L(HL)
4H(7L)(HL)
N2H/Air；
Wherein, Sub represents described substrate; H represents Ta
2o
5; L represents SiO
2; N1 represents the first coefficient, and value is 6,7 or 8; N2 represents the second coefficient, and value is 5,6 or 7.
Preferably, the structural formula of described antireflective coating and described substrate is as follows:
Air/0.404H1.21L/Sub；
Wherein, Sub represents described substrate; H represents Ta
2o
5; L represents SiO
2.
(3) beneficial effect
Hybrid integrated photo-detector of the present invention and preparation method thereof, adopts Si, InP or GaAs substrate, is conducive to or Passive Optical Components active with other and carries out integrated; InGaAs photodiode and deielectric-coating mode filter is adopted to be bonded together, described hybrid integrated photo-detector is made to have the narrow band spectrum response of better flat-top steep limit, improve passband effect, can be used for the application that channel spacing is the dense wave division multipurpose reception of 100GHz, reduce communications cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of hybrid integrated photo-detector described in the embodiment of the present invention;
Fig. 2 is preparation method's flow chart of hybrid integrated photo-detector described in the embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples for illustration of the present invention, but are not used for limiting the scope of the invention.
Fig. 1 is the structural representation of hybrid integrated photo-detector described in the embodiment of the present invention, and as shown in Figure 1, described hybrid integrated photo-detector comprises: the deielectric-coating mode filter 1000 be bonded together and InGaAs photodiode 2000.Described deielectric-coating mode filter 1000 comprises: substrate 1200, and is arranged on the media coating 1300 in described substrate 1200 front and is arranged on the antireflective coating 1100 at described substrate 1200 back side.
Described substrate 1200 can adopt Si, InP or GaAs, preferably adopts Si in the present embodiment.Described media coating 1300 is vertical multi-cavity structure, such as vertical five cavity configurations or vertical six cavity configurations, and preferably adopt vertical five cavity configurations in the present embodiment, two walls up and down in each chamber are provided with reflectance coating, are provided with a wall between adjacent two chambeies.
Described media coating 1300 is as follows with the concrete structure formula of described substrate 1200:
Sub/(HL)
N1H(5L)H(LH)
3L(HL)
3H(5L)H(LH)
2L(HL)
2H(7L)H(LH)
4L(HL)
4H(7L)(HL)
N2H/Air；
Wherein, Sub represents described substrate 1200; H represents Ta
2o
5; L represents SiO
2; N1 represents the first coefficient, and value is 6,7 or 8, and in the present embodiment, preferred value is 6; N2 represents the second coefficient, and value is 5,6 or 7, and in the present embodiment, preferred value is 5.
See Fig. 1, described media coating 1300 is followed successively by from bottom to top: the first reflectance coating 1301, first chamber 1302, second reflectance coating 1303, a Ta
2o
5layer the 1304, second chamber 1305, the 3rd reflectance coating 1306, the 2nd Ta
2o
5layer the 1307, the 3rd chamber 1308, the 4th reflectance coating 1309, the 3rd Ta
2o
5layer the 1310, the 4th chamber 1311 and the 5th reflectance coating 1312.In first reflectance coating 1301, second reflectance coating 1303, the 3rd reflectance coating 1306, the 4th reflectance coating 1309 and the 5th reflectance coating 1312, two adjacent reflectance coatings are parallel to each other.First reflectance coating 1301, second reflectance coating 1303 forms a Fabry-Bo Luo (Fabry-P é rot) chamber with the first chamber 1302 in the middle of it, is called for short F-P cavity.Second reflectance coating 1303, the 3rd reflectance coating 1306 form a F-P cavity with the second chamber 1305 in the middle of it.3rd reflectance coating 1306, the 4th reflectance coating 1309 form a F-P cavity with the 3rd chamber 1308 in the middle of it.4th reflectance coating 1309, the 5th reflectance coating 1312 form a F-P cavity with the 4th chamber 1311 in the middle of it.
In the chamber in described first chamber 1305, chamber 1302, second, the 3rd chamber 1308, the 4th chamber 1311 and the 4th chamber 1311, packing material is SiO
2, optical thickness is λ
0integral multiple (the λ of/2
0=1550nm).The reflectivity of described first reflectance coating 1301, second reflectance coating 1303, the 3rd reflectance coating 1306, the 4th reflectance coating 1309 and the 5th reflectance coating 1312 is all more than or equal to 99%.A described Ta
2o
5layer the 1304, the 2nd Ta
2o
5layer 1307 and the 3rd Ta
2o
5the optical thickness of layer 1310 is λ
0/ 4.
Described antireflective coating 1100 is as follows with the structural formula of described substrate 1200:
Air/0.404H1.21L/Sub；
By arranging described antireflective coating 1100, make the level and smooth through passband of described deielectric-coating mode filter 1000.
See Fig. 1, described InGaAs photodiode 2000 is followed successively by from bottom to up: InP resilient coating 2100, an InGaAs inhibition of corrosion layer 2200, InPn type contact electrode the 2300, the 2nd InGaAs inhibition of corrosion layer the 2400, the one InP wall 2500, InGaAs absorbed layer 2600, the 2nd InP wall 2700, InGaAsp type contact electrode 2800.Further, the top phase bonding of undermost described InP resilient coating 2100 and described media coating 1300; Described InPn type contact electrode 2300 is provided with the n-electrode 2301 of annular; Described InGaAsp type contact electrode 2800 is provided with the p-electrode 2801 of annular.
Fig. 2 is preparation method's flow chart of hybrid integrated photo-detector described in the embodiment of the present invention, and as shown in Figure 2, described method comprises step:
A: at the front somatomedin rete of substrate.Described substrate adopts Si, InP or GaAs, preferably adopts Si in the present embodiment; Described media coating is vertical multi-cavity structure, preferably adopts vertical five cavity configurations in the present embodiment.The structural formula of described media coating and described substrate is as follows:
Sub/(HL)
N1H(5L)H(LH)
3L(HL)
3H(5L)H(LH)
2L(HL)
2H(7L)H(LH)
4L(HL)
4H(7L)(HL)
N2H/Air；
Wherein, Sub represents described substrate; H represents Ta
2o
5; L represents SiO
2; N1 represents the first coefficient, and value is 6,7 or 8, is preferably 6 in the present embodiment; N2 represents the second coefficient, and value is 5,6 or 7, is preferably 5 in the present embodiment.
B: at the back side of described substrate growth antireflective coating, obtain deielectric-coating mode filter epitaxial wafer.The structural formula of described antireflective coating and described substrate is as follows:
Air/0.404H1.21L/Sub。
C: described deielectric-coating mode filter epitaxial wafer is cleaved into deielectric-coating mode filter.Described deielectric-coating mode filter is preferably dimensioned to be 1mm × 1mm.
D: by benzocyclobutene, InGaAs photodiode and described deielectric-coating mode filter are bonded together, prepare hybrid integrated photo-detector.
Wherein, the epitaxial wafer of InGaAs photodiode grows and forms in semi-insulated InP substrate.The epitaxial wafer of described InGaAs photodiode is followed successively by from bottom to up: InP substrate, lower InP resilient coating, InGaAsp type contact electrode, the 2nd InP wall, InGaAs absorbed layer, an InP wall, the 2nd InGaAs inhibition of corrosion layer, InPn type contact electrode, an InGaAs inhibition of corrosion layer, InP resilient coating.Growth apparatus is InP low-pressure MOCVD (metallorganic chemical vapor deposition, Metal-organicChemicalVaporDeposition), completes the growth of the epitaxial wafer of described InGaAs photodiode under the growth temperature of 650 DEG C.The epitaxial wafer of described InGaAs photodiode is inverted, is bonded together by benzocyclobutene and described deielectric-coating mode filter front.Then, carried out the preparation of device by wet etching method, after photoetching treatment, eliminate described InP substrate and lower InP resilient coating, and utilize magnetic control sputtering system on described InGaAsp type contact electrode, produce the p-electrode of annular.After described InGaAsp type contact electrode, the 2nd InP wall, InGaAs absorbed layer, an InP wall, the 2nd InGaAs inhibition of corrosion layer are corroded, produce the circular upper table surface that diameter is 40 μm, on described InPn type contact electrode, the n-electrode of annular is again produced through photoetching treatment and magnetron sputtering, described in final etching, InPn type contact electrode, an InGaAs inhibition of corrosion layer and InP resilient coating, obtain the circular following table of 60 μm.After photoetching treatment, magnetron sputtering technique is utilized to plate Ti-Au in described p-electrode and n-electrode.Use polyimides to carry out Passivation Treatment to whole device, obtain the Si base hybrid integrated photo-detector that can be used for dense wavelength division multiplexing system.
Hybrid integrated photo-detector and preparation method thereof described in the embodiment of the present invention, adopts Si, InP or GaAs substrate, is conducive to or Passive Optical Components active with other and carries out integrated; InGaAs photodiode and deielectric-coating mode filter is adopted to be bonded together, described hybrid integrated photo-detector is made to have the narrow band spectrum response of better flat-top steep limit, improve passband effect, can be used for the application that channel spacing is the dense wave division multipurpose reception of 100GHz, reduce communications cost.
Above execution mode is only for illustration of the present invention; and be not limitation of the present invention; the those of ordinary skill of relevant technical field; without departing from the spirit and scope of the present invention; can also make a variety of changes and modification; therefore all equivalent technical schemes also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (8)
1. a hybrid integrated photo-detector, is characterized in that, comprising: the deielectric-coating mode filter be bonded together and InGaAs photodiode; Described deielectric-coating mode filter comprises substrate, and is arranged on the media coating of described substrate face and is arranged on the antireflective coating of described substrate back; Described substrate adopts Si, InP or GaAs; Described media coating is vertical five cavity configurations, and two walls up and down in each chamber are provided with reflectance coating, is provided with a wall between adjacent two chambeies;
The structural formula of described media coating and described substrate is as follows:
Sub/(HL)
N1H(5L)H(LH)
3L(HL)
3H(5L)H(LH)
2L(HL)
2H(7L)H(LH)
4L(HL)
4H(7L)(HL)
N2H/Air；
Wherein, Sub represents described substrate; H represents Ta
2o
5; L represents SiO
2; N1 represents the first coefficient, and value is 6,7 or 8; N2 represents the second coefficient, and value is 5,6 or 7.
2. hybrid integrated photo-detector as claimed in claim 1, it is characterized in that, the reflectivity of described reflectance coating is more than or equal to 99%.
3. hybrid integrated photo-detector as claimed in claim 1, it is characterized in that, the optical thickness in described chamber is λ
0the integral multiple of/2, λ
0equal 1550nm.
4. hybrid integrated photo-detector as claimed in claim 1, it is characterized in that, the structural formula of described antireflective coating and described substrate is as follows:
Air/0.404H1.21L/Sub；
Wherein, Sub represents described substrate; H represents Ta
2o
5; L represents SiO
2.
5. hybrid integrated photo-detector as claimed in claim 1, it is characterized in that, the structure of described InGaAs photodiode is followed successively by from bottom to up: InP resilient coating, an InGaAs inhibition of corrosion layer, InPn type contact electrode, the 2nd InGaAs inhibition of corrosion layer, an InP wall, InGaAs absorbed layer, the 2nd InP wall and InGaAsp type contact electrode; And undermost described InP resilient coating and described media coating phase bonding.
6. a preparation method for hybrid integrated photo-detector, is characterized in that, comprises step:
A: at the front somatomedin rete of substrate; Described substrate adopts Si, InP or GaAs; Described media coating is vertical multi-cavity structure;
B: at the back side of described substrate growth antireflective coating, obtain deielectric-coating mode filter epitaxial wafer;
C: described deielectric-coating mode filter epitaxial wafer is cleaved into deielectric-coating mode filter;
D: InGaAs photodiode and described deielectric-coating mode filter are bonded together, prepare hybrid integrated photo-detector.
7. method as claimed in claim 6, it is characterized in that, the structural formula of described media coating and described substrate is as follows:
Sub/(HL)
N1H(5L)H(LH)
3L(HL)
3H(5L)H(LH)
2L(HL)
2H(7L)H(LH)
4L(HL)
4H(7L)(HL)
N2H/Air；
Wherein, Sub represents described substrate; H represents Ta
2o
5; L represents SiO
2; N1 represents the first coefficient, and value is 6,7 or 8; N2 represents the second coefficient, and value is 5,6 or 7.
8. method as claimed in claim 7, it is characterized in that, the structural formula of described antireflective coating and described substrate is as follows:
Air/0.404H1.21L/Sub；
Wherein, Sub represents described substrate; H represents Ta
2o
5; L represents SiO
2.
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| CN1328347A (en) * | 2001-07-11 | 2001-12-26 | 北京邮电大学 | Photoelectric semiconductor detector with flat-top and sharp-edge responses and its implementation method |
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| JP4383194B2 (en) * | 2004-02-03 | 2009-12-16 | 古河電気工業株式会社 | Dielectric multilayer filter having predetermined wavelength optical characteristics, design method thereof, design program thereof, and optical add / drop system using the dielectric multilayer filter |
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| CN1328347A (en) * | 2001-07-11 | 2001-12-26 | 北京邮电大学 | Photoelectric semiconductor detector with flat-top and sharp-edge responses and its implementation method |
Non-Patent Citations (2)
| Title |
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| 基于InP/空气隙DBR的长波长一镜斜置三镜腔型光电探测器;王琦等;《光通信技术》;20050430(第4期);第10-12页 * |
| 用于WDM系统的新型平顶陡边光探测器的研究;邸菁;《信息科技辑》;20110315;第69-70页 * |
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