CN103376604B

CN103376604B - Dot structure and apply its liquid crystal display structure

Info

Publication number: CN103376604B
Application number: CN201210106158.8A
Authority: CN
Inventors: 陈建宏; 庄璧荥; 王诠中; 陈昱玮
Original assignee: Innolux Shenzhen Co Ltd; Innolux Display Corp
Current assignee: Innolux Shenzhen Co Ltd; Innolux Corp
Priority date: 2012-04-12
Filing date: 2012-04-12
Publication date: 2016-03-30
Anticipated expiration: 2032-04-12
Also published as: CN103376604A; CN105589242A; CN105589242B

Abstract

The invention provides a kind of dot structure and apply its liquid crystal display structure.This dot structure comprises: a substrate, one first dielectric layer and one second dielectric layer.Substrate is provided with a signal wire and a pixel electrode.First dielectric layer is covered on signal wire, and the first dielectric layer has one first capacitance.Second dielectric layer is configured on substrate, and the second dielectric layer at least covers pixel electrode.Second dielectric layer has one second capacitance, and the second capacitance is greater than the first capacitance.

Description

Dot structure and apply its liquid crystal display structure

Technical field

The invention relates to a kind of liquid crystal display, and relate to a kind of dot structure especially and apply its liquid crystal display structure.

Background technology

Liquid crystal display (LiquidCrystalDisplay, LCD), based on the advantage such as its low voltage operating, radiationless, lightweight and volume be little, replaces traditional cathode-ray tube display gradually, and becomes the main flow of display in recent years.

But, liquid crystal display still exist at present angular field of view narrow with the liquid crystal reaction time problem such as long, therefore how increasing its angular field of view and Reaction time shorten, is one of problem being badly in need of at present improving.Existing many wide-angle liquid crystal display schemes are suggested now, it includes multi-domain perpendicular alignment-type (Multi-domainVerticalAlignment, MVA) liquid crystal display, copline conversion (In-PlaneSwitching, IPS) liquid crystal display and fringe field translative mode (FringeFieldSwitching, FFS) liquid crystal display etc.Generally speaking, if liquid crystal reaction velocity (responsespeed) is fast not, there will be action when quick animation and do not catch up with, image, word are difficult to the phenomenon of identification, that is motion blur phenomenon.It is reported, the liquid crystal reaction time, more than 40ms, just there will be the hysteresis phenomenon of moving image.The standard reaction time major part of current display panels is at about 25ms, and the blue phase liquid crystal therefore adopting the reaction time shorter is trend of the times.

But, because blue phase liquid crystal can only be present in narrow temperature range interval, current existing solution is that the cholesterol liquid crystal with blue phase is added high polymer monomer (monomer), and under blue transition temperature, carry out polymerization according to UV light, carrying out stable blue phase crystalline network makes its temperature range extend, but no matter carry out stable blue phase lattice with or without employing polymerization, general its photoelectric curve (V-Tcurve) all has hysteresis phenomenon, makes the repetitive operation of blue phase liquid crystal display not good.

Summary of the invention

The invention relates to a kind of dot structure and apply its liquid crystal display structure, in order to reduce hysteresis phenomenon and to increase repetitive operation.

According to an aspect of the present invention, propose a kind of dot structure, comprise a substrate, one first dielectric layer and one second dielectric layer.Substrate is provided with a signal wire and a pixel electrode.First dielectric layer is covered on signal wire, and the first dielectric layer has one first capacitance.Second dielectric layer is configured on substrate, and the second dielectric layer at least covers pixel electrode.Second dielectric layer has one second capacitance, and the second capacitance is greater than the first capacitance.

According to a further aspect in the invention, propose a kind of liquid crystal display structure, comprise a substrate, one first dielectric layer, one second dielectric layer, a subtend substrate and a liquid crystal layer.Substrate is provided with a signal wire and a pixel electrode.First dielectric layer is covered on signal wire, and the first dielectric layer has one first capacitance.Second dielectric layer is configured on substrate, and the second dielectric layer at least covers pixel electrode.Second dielectric layer has one second capacitance, and the second capacitance is greater than the first capacitance.Subtend substrate is relative with substrate-parallel.Liquid crystal layer is configured between substrate and subtend substrate.

Dot structure provided by the invention and apply its liquid crystal display structure, can reduce hysteresis phenomenon and increase repetitive operation.

Accompanying drawing explanation

The comparison diagram of the photoelectric curve that Figure 1 shows that the liquid crystal layer be not formed on dielectric layer and the photoelectric curve being formed at the liquid crystal layer on dielectric layer.

Fig. 2 A is depicted as the partial schematic diagram of the liquid crystal display structure according to one embodiment of the invention.

Fig. 2 B is depicted as the partial schematic diagram of the liquid crystal display structure according to another embodiment of the present invention.

Figure 3 shows that the schematic diagram of the equivalent capacity of the liquid crystal display structure of Fig. 2 A.

Fig. 4 A, Fig. 4 B, Fig. 4 C to Fig. 4 D are depicted as the curve map that the thickness (X) of dielectric layer and the number percent shared by driving voltage (V_LC) meet relational expression (2) respectively.

Fig. 5 A, Fig. 5 B, Fig. 5 C to Fig. 5 D be depicted as respectively each numerical value (Y=a, b, c or d) and the specific inductive capacity of dielectric layer (S) meet the curve map of relational expression (3).

Figure 6 shows that with the thickness of dielectric layer (X) and specific inductive capacity (S) for coordinate axis, measure the curve distribution figure of the number percent shared by driving voltage (V_LC).

Fig. 7 A, Fig. 7 B, Fig. 7 C, Fig. 7 D, Fig. 7 E to Fig. 7 F are depicted as the process flow diagram of the formation method of the dot structure according to an embodiment.

Fig. 8 A, Fig. 8 B, Fig. 8 C, Fig. 8 D, Fig. 8 E to Fig. 8 F are depicted as the process flow diagram of the formation method of the dot structure according to an embodiment.

Fig. 9 A, Fig. 9 B, Fig. 9 C, Fig. 9 D, Fig. 9 E to Fig. 9 F are depicted as the process flow diagram of the formation method of the dot structure according to an embodiment.

Figure 10 A, Figure 10 B, Figure 10 C, Figure 10 D, Figure 10 E to Figure 10 F are depicted as the process flow diagram of the formation method of the dot structure according to an embodiment.

Figure 11 A, Figure 11 B, Figure 11 C, Figure 11 D, Figure 11 E to Figure 11 F are depicted as the process flow diagram of the formation method of the dot structure according to an embodiment.

Figure 12 A, Figure 12 B, Figure 12 C, Figure 12 D, Figure 12 E to Figure 12 F are depicted as the process flow diagram of the formation method of the dot structure according to an embodiment.

Drawing reference numeral:

100: liquid crystal display structure

110: substrate

111: substrate surface

112: the first electrodes

114: the second electrodes

115: insulation course

116: the three electrodes

117: surface of insulating layer

120: dielectric layer

130: subtend substrate

140: liquid crystal layer

E: transverse electric field

202,302,402: signal wire

204,304,404: protective seam

206,306,406: the first dielectric layers

208,308,408: pixel electrode

210,310,410: substrate

220,320,420: the second dielectric layers

312,412: the first electrodes

314,414: the second electrodes

407a: projection

407b: transparency conducting layer

P: pixel region

Embodiment

In order to have better understanding, special embodiment below to above-mentioned and other aspect of the present invention, and coordinating appended accompanying drawing, being described in detail below:

Dot structure of the present invention and liquid crystal display structure, be in the process of lattice growth, cover the dielectric layer of one deck organic substance or dead matter on substrate, pixel electrode and public electrode.Liquid crystal layer directly contacts with dielectric layer, and the cholesterol liquid crystal and high polymer monomer potpourri with blue phase are heated to the temperature range of blue phase lattice existence, wait for a period of time and allow the stable lattice of blue phase liquid crystal grow up, penetrate with UV illumination again and produce polymerization, to form blue phase (Polymer-stabilizedbluephase, the PSBP) liquid crystal layer of polymer stabilizing.In the present invention, because liquid crystal layer is grown up lattice on identical dielectric surface (dielectric layer), thus can avoid different medium surface (substrate and electrode) upper Yin Wendu or interface condition different and cannot the situation of uniform growth lattice.Also because liquid crystal layer has the blue phase liquid crystal of stable lattice growth, the photoelectric characteristic of liquid crystal layer is improved, and then reduces hysteresis phenomenon and increase repetitive operation.Also therefore, the liquid crystal layer adopting the reaction time shorter is trend of the times.This liquid crystal layer is display optical isotropy in time not applying electric field, and presents optical anisotropy, such as, for blue phase liquid crystal in time applying electric field.

Please refer to Fig. 1, its photoelectric curve being depicted as the liquid crystal layer be not formed on dielectric layer and the comparison diagram of photoelectric curve being formed at the liquid crystal layer on dielectric layer.The experiment proved that, form the photoelectric curve of liquid crystal layer on the dielectric layer, hysteresis phenomenon does not occur, and then there is hysteresis phenomenon in the photoelectric curve not being formed at the liquid crystal layer on dielectric layer, proves that the present invention can improve the photoelectric characteristic of liquid crystal layer.

Below propose various embodiment to be described in detail, embodiment only in order to illustrate as example, and is not used to the scope of limit the present invention for protection.

Please refer to Fig. 2 A, it is depicted as the partial schematic diagram of the liquid crystal display structure according to one embodiment of the invention.Liquid crystal display structure 100 comprises substrate 110, dielectric layer 120, subtend substrate 130 and a liquid crystal layer 140.Substrate 110 is parallel relative with subtend substrate 130, such as, be parallel relative active component array base board and colored optical filtering substrates.Active component array base board can be thin-film transistor array base-plate (TFTarraysubstrate) or diode array substrate.Liquid crystal layer 140 is configured between substrate 110 and subtend substrate 130, such as, be blue phase (PSBP) liquid crystal layer of polymer stabilizing.Blue phase liquid crystal is common three kinds of out of phase existence, be respectively the first blue phase (BPI), the second blue phase (BPII) and the 3rd blue phase (BPIII), first blue phase liquid crystal and the second blue phase liquid crystal are two reverse cylindrical-shaped structure (doubletwistcylinder, that is the orthogonal arrangement in space of two torsion cylindrical tube DTC).In addition, first blue phase liquid crystal is body-centered cubic structure (body-centeredcubic, BCC), and the second blue phase liquid crystal is simple cubic structure (simplecubic, SC), the 3rd blue phase liquid crystal is then unformed (amorphous) structure.Eurymeric blue phase liquid crystal is not when adding transverse electric field E, its perfect condition has optics isotropy (Isotropic), and its birefringence (i.e. Δ n) is 0, can not cause phase delay, and dark-state is presented under NormallyBlack operation, cannot printing opacity.When additional transverse electric field E is in eurymeric blue phase liquid crystal, then blue phase liquid crystal has optical anisotropy, and produces birefringence (i.e. Δ n > 0), causes phase delay, and presents on state of under NormallyBlack operation.

Please refer to Fig. 2 A, substrate 110 is provided with one first electrode 112 and one second electrode 114 arranged in parallel, and the first electrode 112 and the second electrode 114 are applied in a voltage and produce a transverse electric field E between the first electrode 112 and the second electrode 114.In the present embodiment, the first electrode 112 can be pixel electrode, and it has noble potential, and the second electrode 114 can be public electrode, and it has electronegative potential, to make to form a transverse electric field E because of potential difference (PD) between the first electrode 112 and the second electrode 114.Transverse electric field E can be copline conversion (IPS) type transverse electric field, in order to control the birefringence of liquid crystal layer 140, makes light can penetrate liquid crystal layer 140 and present on state of.

In addition, dielectric layer 120 is configured on substrate 110.Dielectric layer 120 be such as evaporate, sputter, physical vaporous deposition (PVD), chemical vapour deposition technique (CVD), atomic layer deposition method (ALD) or Metalorganic chemical vapor deposition method (MOCVD) are formed in film on substrate 110, its material can be silicide (such as SiOx, SiNx etc.), oxide (such as A1 ₂o ₃, TiO ₂, TaO ₅, SrTiO ₃, ZrO ₂, HfO ₂, HfSiO ₄, La ₂o ₃, YaO ₃, a-LaAlO ₃) etc. dead matter or high molecular polymer (such as polyimide resin, polyamide resin etc.).Atomic layer deposition method accurately can control the yardstick that film thickness reaches atom level (about 1/10th how rice, how rice equals 10 dusts).When in the process that liquid crystal layer 140 is grown up in lattice, owing to being subject to the obstruct of dielectric layer 120, crystal can not be subject to the impact of substrate 110 below dielectric layer 120 and two electrodes 112,114 and different, therefore can form the liquid crystal layer 140 that stable lattice grows up.

Please refer to Fig. 2 B, it is depicted as the partial schematic diagram of the liquid crystal display structure 101 according to another embodiment of the present invention.In the present embodiment, substrate 110 is provided with one the 3rd electrode 116, and it is positioned at below the first electrode 112 and the second electrode 114, and is separated by with insulation course 115.First electrode 112 and the second electrode 114 can be pixel electrode, it has electronegative potential, and the 3rd electrode 116 can be public electrode, it has noble potential, a transverse electric field E is formed because of potential difference (PD) respectively and between the first electrode 112 and the second electrode 114 to make the 3rd electrode 116, be such as fringe field conversion (FFS) type transverse electric field, in order to control the birefringence of liquid crystal layer 140, make light can penetrate liquid crystal layer 140 and present on state of.

By above-mentioned liquid crystal display structure 100, the present embodiment proposes dot structure.First, on substrate 110, one first electrode 112 and one second electrode 114 arranged in parallel is formed with.Then, form a dielectric layer 120 on substrate 110, dielectric layer 120 covers the first electrode 112, second electrode 114 and the substrate surface 111 (or surface of insulating layer 117) between the first electrode 112 and the second electrode 114.Afterwards, a liquid crystal layer 140 is formed between substrate 110 and a subtend substrate 130.Then, the temperature range existed to blue phase lattice by heating fluid crystal layer 140, and wait for a period of time and allow the stable lattice of liquid crystal layer 140 grow up, then produce polymerization with UV-irradiation.

Please refer to Fig. 3, it is depicted as the schematic diagram of the equivalent capacity of the liquid crystal display structure 100 of Fig. 2 A, and wherein C_LC is the equivalent capacity of transverse electric field E by liquid crystal layer 140, and C_PI is respectively the equivalent capacity between liquid crystal layer 140 and the first electrode 112/ second electrode 114.When applying one voltage is between a, b two ends, the driving voltage that transverse electric field E is produced by liquid crystal layer 140 represents with V_LC, and the voltage applied represents with Vab, driving voltage (V_LC) is learnt by formula (1) relative to the number percent of the voltage (Vab) applied:

\frac{V_LC}{Vab} \approx (\frac{\frac{1}{C_LC}}{\frac{1}{C_LC} + \frac{2}{C_PI}}) \times 100 % - - - (1)

In above-mentioned formula (1), the numerical value of equivalent capacity C_LC and C_PI is relevant with specific inductive capacity (permittivity) with the thickness of dielectric layer 120.Therefore, below for the dielectric layer 120 of differing dielectric constant, through simulated experiment, find out the optimization result between the thickness of dielectric layer 120 and the driving voltage of liquid crystal layer 140.The specific inductive capacity of dielectric layer 120 is different according to properties of materials, and its scope can between 6 ~ 60, but not as limit.Although only listing specific inductive capacity in the present embodiment is the representative numerical value such as 6.4,12.8,16.0,19.2 and 60, any specific inductive capacity between 6 ~ 60 all tries to achieve approximate result by interpolation method or formula, is not described in detail in this.

Please refer to table, when the specific inductive capacity of dielectric layer is 6.4, from the analog result between the thickness of dielectric layer and the driving voltage (V_LC) of liquid crystal layer, when the thickness of dielectric layer is greater than 3000 dust, the driving voltage of liquid crystal layer will be less than 60 relative to the number percent shared by the voltage applied, that is, to maintain identical driving voltage, the operating voltage that certainly will will improve between a, b two ends.In addition, in order to reduce pressure drop, by reducing the thickness of dielectric layer, the number percent shared by driving voltage of liquid crystal layer is increased.Such as, when thickness is less than 1000 dust, the number percent shared by driving voltage can be increased to more than 70.

Table one

Please refer to table two, when the specific inductive capacity of dielectric layer is 12.8, from the analog result between the thickness of dielectric layer and the driving voltage (V_LC) of liquid crystal layer, when the thickness of dielectric layer is less than 2000 dust, the number percent shared by the driving voltage of liquid crystal layer also can be increased to more than 70 (interpolation methods).For table one, the dielectric layer of same thickness, specific inductive capacity increases and improves the number percent shared by driving voltage, to reduce pressure drop by contributing to.

Table two

Please refer to table three, when the specific inductive capacity of dielectric layer is 16, from the analog result between the thickness of dielectric layer and the driving voltage (V_LC) of liquid crystal layer, when the thickness of dielectric layer is less than 2500 dust, the number percent shared by the driving voltage of liquid crystal layer also can be increased to more than 70.For table one, the dielectric layer of same thickness, specific inductive capacity increases and improves the number percent shared by driving voltage, to reduce pressure drop by contributing to.

Table three

Please refer to table four, when the specific inductive capacity of dielectric layer is 19.2, from the analog result between the thickness of dielectric layer and the driving voltage (V_LC) of liquid crystal layer, when the thickness of dielectric layer is less than 3500 dust, the number percent shared by the driving voltage of liquid crystal layer also can be increased to more than 70.For table one, the dielectric layer of same thickness, specific inductive capacity increases and improves the number percent shared by driving voltage, to reduce pressure drop by contributing to.

Table four

Please refer to table five, when the specific inductive capacity of dielectric layer is 60, from the analog result between the thickness of dielectric layer and the driving voltage (V_LC) of liquid crystal layer, when the thickness of dielectric layer is less than 3500 dust, number percent shared by the driving voltage of liquid crystal layer still can maintain more than 88, and when thickness is less than 500 dust, the number percent shared by the driving voltage of liquid crystal layer can reach 100.When the thickness of dielectric layer increases, the number percent shared by driving voltage will decline gradually.

Table five

Please refer to Fig. 4 A, Fig. 4 B, Fig. 4 C to Fig. 4 D, it is depicted as the curve map that the thickness (X) of dielectric layer and the number percent shared by driving voltage (V_LC) meet following relationship (2) respectively.

V_LC＝a*Exp(b*X)+c*Exp(d*X)(2)

Wherein a, b, c, d can learn its numerical value via look-up table or with the curve map of Fig. 5 A, Fig. 5 B, Fig. 5 C to Fig. 5 D.Please refer to table six, it lists specific inductive capacity typically when being 6.4,12.8,16.0,19.2, the numerical value representated by a, b, c, d.From Fig. 4 A, Fig. 4 B, Fig. 4 C to Fig. 4 D, when the specific inductive capacity of dielectric layer is definite value, the number percent shared by driving voltage declines along with the thickness increase of dielectric layer.

Table six

Specific inductive capacity	a	b	c	d
					6.4	0.2861	-0.002489	0.7052	-0.00005106
12.8	0.2412	-0.001630	0.7592	-0.00004513
					16.0	0.23	-0.000915	0.77	-0.00004157
19.2	0.22	-0.00085	0.78	-0.000037

Then, please refer to Fig. 5 A, Fig. 5 B, Fig. 5 C to Fig. 5 D, its be depicted as respectively each numerical value (Y=a, b, c or d) and the specific inductive capacity of dielectric layer (S) meet the curve map of following relationship (3).

Y＝P1*S ²+P2*S+P3(3)

Wherein known numerical value (Y) and specific inductive capacity (S) or can be brought into the middle Regressive Solution of relational expression (3) and learn via look-up table by the numerical value of P1, P2, P3, and its result as shown in Table 7.

Table seven

	P1	P2	P3
				a	2.683e-04	-1.198e-02	3.516e-01
b	-3.762e-06	2.315e-04	-3.84e-03
				c	-3.72e-04	1.528e-02	6.229e-01
d	2.89e-08	3.534e-07	-5.449e-05

In addition, from relational expression (2) and (3), the number percent shared by driving voltage (V_LC) is relevant with specific inductive capacity (S) with the thickness (X) of dielectric layer.Please refer to Fig. 6, it is depicted as with the thickness of dielectric layer (X) and specific inductive capacity (S) for coordinate axis, measures the curve distribution figure of the number percent shared by driving voltage (V_LC).In the two-dimensional coordinate of Fig. 6, dotted line represents that the number percent shared by driving voltage (V_LC) of liquid crystal layer is about the imaginary line of 70, and arrow represents the ideal zone that driving voltage (V_LC) is greater than 70 relative to the number percent shared by the voltage applied.Therefore, we can find the driving voltage corresponding with the dielectric layer used to drop on which region easily, whether meet demand to facilitate the number percent shared by computing driving voltage.

Above-mentioned content explains when being and forming dielectric layer with whole substrate, and that is, dielectric layer, except the electrode that covering is positioned at pixel region, also may cover the sweep trace being positioned at non-pixel areas and data line.But because the specific inductive capacity of dielectric layer is large, the capacitance produced also can become large, easily cause load excessive to sweep trace and data line, therefore in the following example, be formed in the non-pixel areas of substrate with the dielectric layer that capacitance is less, to alleviate the load on sweep trace and data line, simultaneously, be formed in the pixel region of substrate with the dielectric layer that capacitance is larger, make the number percent shared by the driving voltage of liquid crystal layer (V_LC) meet demand, to avoid producing pressure drop.

Please refer to table eight and table nine, it exemplifies the specific inductive capacity of two kinds of dielectric layers and the relation of thickness.From capacitance equation, electric capacity C=specific inductive capacity * A/d, wherein A is area, and d is thickness.When specific inductive capacity is less or thickness (d) is thicker, capacitance (C) can diminish; Otherwise when specific inductive capacity is comparatively large or thickness (d) is thinner, capacitance (C) can become large.We can select suitable dielectric layer according to following numerical value, with the capacitance making the capacitance of the second dielectric layer be greater than the first dielectric layer, but do not limit the size of its specific inductive capacity and the thickness of thickness.

Table eight

Table nine

Below enumerate several embodiment, so that each step of the present invention to be described.

First embodiment:

Please refer to Fig. 7 A, Fig. 7 B, Fig. 7 C, Fig. 7 D, Fig. 7 E to Fig. 7 F, it is depicted as the formation method of the dot structure according to an embodiment.First, substrate 210 is sequentially formed with signal wire 202, protective seam 204,1 first dielectric layer 206, pixel electrode 208 and one second dielectric layer 220.Signal wire 202 is such as data line or sweep trace, and it is positioned at the side of pixel electrode 208.In fig. 7 c, protective seam 204 covers on signals layer.In fig. 7d, the first dielectric layer 206 covers on the protective seam 204 above signal wire 202.But, if unprotect layer 204, first dielectric layer 206 can directly overlay on signal wire 202.First dielectric layer 206 is such as the dielectric layer that specific inductive capacity is less or thickness is thicker, therefore by the first dielectric layer 206 that capacitance is less, the load that signal wire 202 is experienced can be made to diminish.Then, please refer to Fig. 7 E, pixel electrode 208 is formed in the P of pixel region.Though the present embodiment is not depicted as the public electrode relative with pixel electrode 208, public electrode can be known by inference and be formed on subtend substrate, to form a vertical electric field.Then, please refer to Fig. 7 F, the second whole face of dielectric layer 220 covers on pixel electrode 208 and the first dielectric layer 206.Relative to the dielectric layer that the first dielectric layer 206, second dielectric layer 220 is such as the comparatively large or thinner thickness of specific inductive capacity, with the capacitance making the capacitance of the second dielectric layer 220 be greater than the first dielectric layer 206.Therefore, the number percent shared by the driving voltage of liquid crystal layer (V_LC) can be avoided to decline by the second dielectric layer 220 that capacitance is larger and produce pressure drop.

Second embodiment:

Please refer to Fig. 8 A, Fig. 8 B, Fig. 8 C, Fig. 8 D, Fig. 8 E to Fig. 8 F, it is depicted as the formation method of the dot structure according to an embodiment.The present embodiment and the first embodiment difference part are: the second dielectric layer 220 defines its plated film position by light shield, the second dielectric layer 220 is only covered on pixel electrode 208, but does not cover on the first dielectric layer 206.Principle as described above, the present embodiment is still by the first dielectric layer 206 that capacitance is less, the load that signal wire 202 is experienced is diminished, and the number percent shared by the driving voltage of liquid crystal layer (V_LC) can be avoided to decline by the second dielectric layer 220 that capacitance is larger and produce pressure drop the 3rd embodiment

Please refer to Fig. 9 A, Fig. 9 B, Fig. 9 C, Fig. 9 D, Fig. 9 E to Fig. 9 F, it is depicted as the formation method of the dot structure according to an embodiment.The present embodiment and the first embodiment difference part are: pixel electrode 308 comprises the first electrode 312 and the second electrode 314 that parallel interval arranges.First electrode 312 and the second electrode 314 are such as pixel electrode, or one is pixel electrode, and another is public electrode.A transverse electric field is formed by potential difference (PD), to control liquid crystal layer between first electrode 312 and the second electrode 314.In 9D figure, the first dielectric layer 306 only covers on the protective seam 304 above signal wire 302, and in 9E figure, the second whole of dielectric layer 320 covers the first electrode 312, second electrode 314 and the first dielectric layer 306.Principle as described above, the present embodiment is still by the first dielectric layer 306 that capacitance is less, the load that signal wire 302 is experienced is diminished, and the number percent shared by the driving voltage of liquid crystal layer (V_LC) can be avoided to decline by the second dielectric layer 320 that capacitance is larger and produce pressure drop.

4th embodiment:

Please refer to Figure 10 A, Figure 10 B, Figure 10 C, Figure 10 D, Figure 10 E to Figure 10 F, it is depicted as the formation method of the dot structure according to an embodiment.The present embodiment and the 3rd embodiment difference part are: the second dielectric layer 320 defines its plated film position by light shield, the second dielectric layer 320 is only covered on the first electrode 312 and the second electrode 314, but does not cover on the first dielectric layer 306.Principle as described above, the present embodiment is still by the first dielectric layer 306 that capacitance is less, the load that signal wire 302 is experienced can be made to diminish, and the number percent shared by the driving voltage of liquid crystal layer (V_LC) can be avoided to decline by the second dielectric layer 320 that capacitance is larger and produce pressure drop.

5th embodiment:

Please refer to Figure 11 A, Figure 11 B, Figure 11 C, Figure 11 D, Figure 11 E to Figure 11 F, it is depicted as the formation method of the dot structure according to an embodiment.First, substrate 410 is sequentially formed with signal wire 402, protective seam 404,1 first dielectric layer 406, pixel electrode 408 and one second dielectric layer 420.The present embodiment and the 3rd embodiment difference part are: in Figure 11 D, first dielectric layer 406 also comprises the majority projection 407a being formed at pixel region P, and in Figure 11 E, pixel electrode 408 comprises the transparency conducting layer 407b be formed on each projection 407a, to form spaced first electrode 412 and the second electrode 414.First electrode 412 and the second electrode 414 are such as pixel electrode, or one is pixel electrode, and another is public electrode.A transverse electric field is formed by voltage difference, to control liquid crystal layer between first electrode 412 and the second electrode 414.By the projection 407a projected upwards, the scope that the transverse electric field between the first electrode 412 and the second electrode 414 can be contained increases, and therefore can improve the birefringence of liquid crystal layer further.

In Figure 11 D, the first dielectric layer 406 only covers on the protective seam 404 above signal wire 402, and in Figure 11 F, the second whole of dielectric layer 420 covers the first electrode 412, second electrode 414 and the first dielectric layer 406.Principle as described above, the present embodiment is still by the first dielectric layer 406 that capacitance is less, the load that signal wire 402 is experienced is diminished, and the number percent shared by the driving voltage of liquid crystal layer (V_LC) can be avoided to decline by the second dielectric layer 420 that capacitance is larger and produce pressure drop.

6th embodiment:

Please refer to Figure 12 A, Figure 12 B, Figure 12 C, Figure 12 D, Figure 12 E to Figure 12 F, it is depicted as the formation method of the dot structure according to an embodiment.The present embodiment and the 5th embodiment difference part are: the second dielectric layer 420 defines its plated film position by light shield, the second dielectric layer 420 is only covered on the first electrode 412 and the second electrode 414, but does not cover on the first dielectric layer 406.Principle as described above, the present embodiment is still by the first dielectric layer 406 that capacitance is less, the load that signal wire 402 is experienced is diminished, and the number percent shared by the driving voltage of liquid crystal layer (V_LC) can be avoided to decline by the second dielectric layer 420 that capacitance is larger and produce pressure drop.

In sum, although the present invention with preferred embodiment disclose as above, so itself and be not used to limit the present invention.Those skilled in the art, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when being as the criterion with claim institute confining spectrum.

Claims

1. a dot structure, is characterized in that, described dot structure comprises:

One substrate, described substrate is provided with a signal wire and a pixel electrode;

One first dielectric layer, is covered on described signal wire, and described first dielectric layer forms one first capacitance between described signal wire and a public electrode; And

One second dielectric layer, be configured on described substrate, described second dielectric layer at least covers described pixel electrode, and described second dielectric layer forms one second capacitance between described pixel electrode and described public electrode, and described second capacitance is greater than described first capacitance.

2. dot structure as claimed in claim 1, it is characterized in that, the specific inductive capacity of described second dielectric layer is between 6 to 60, and its thickness is less than 3000 dusts.

3. dot structure as claimed in claim 1, it is characterized in that, the material of described second dielectric layer comprises silicide, oxide or high molecular polymer.

4. dot structure as claimed in claim 1, it is characterized in that, the specific inductive capacity of described second dielectric layer is greater than 6.4, and its thickness is less than 1000 dusts.

5. dot structure as claimed in claim 1, it is characterized in that, the specific inductive capacity of described second dielectric layer is greater than 12.8, and its thickness is less than 2000 dusts.

6. dot structure as claimed in claim 1, it is characterized in that, the specific inductive capacity of described second dielectric layer is greater than 16, and its thickness is less than 2500 dusts.

7. dot structure as claimed in claim 1, it is characterized in that, the specific inductive capacity of described second dielectric layer is greater than 19.2, and when its thickness is less than 3500 dust.

8. dot structure as claimed in claim 1, it is characterized in that, described pixel electrode comprises spaced one first electrode and one second electrode, and described second dielectric layer covers described first electrode, described second electrode and the substrate surface between described first electrode and described second electrode.

9. dot structure as claimed in claim 8, it is characterized in that, described first dielectric layer more comprises multiple projection, is formed on described substrate, and described pixel electrode more comprises the transparency conducting layer be formed on each described projection, to form described first electrode and described second electrode.

10. dot structure as claimed in claim 8, it is characterized in that, described dot structure more comprises one the 3rd electrode, is configured on described substrate, and is positioned at described first electrode and described second base part.

11. dot structures as claimed in claim 1, it is characterized in that, described first capacitance is less than 0.003, and described second capacitance is less than 0.01.

12. 1 kinds of liquid crystal display structures, is characterized in that, described liquid crystal display structure comprises:

One first dielectric layer, is covered on described signal wire, and described first dielectric layer forms one first capacitance between described signal wire and a public electrode;

One second dielectric layer, be configured on described substrate, described second dielectric layer at least covers described pixel electrode, and described second dielectric layer forms one second capacitance between described pixel electrode and described public electrode, and described second capacitance is greater than described first capacitance;

One subtend substrate is relative with described substrate-parallel; And

One liquid crystal layer, is configured between described substrate and described subtend substrate.

13. liquid crystal display structures as claimed in claim 12, it is characterized in that, the specific inductive capacity of described second dielectric layer is between 6 to 60, and its thickness is less than 3000 dusts, when applying one voltage is in described pixel electrode, produce an electric field in described liquid crystal layer, the driving voltage that wherein said electric field is produced by described liquid crystal layer is not less than 60 relative to the number percent of the described voltage applied.

14. liquid crystal display structures as claimed in claim 12, it is characterized in that, described liquid crystal layer is display optical isotropy in time not applying electric field, and presents optical anisotropy in time applying electric field.

15. liquid crystal display structures as claimed in claim 12, it is characterized in that, the material of described second dielectric layer comprises silicide, oxide or high molecular polymer.

16. liquid crystal display structures as claimed in claim 12, it is characterized in that, the specific inductive capacity of described second dielectric layer is greater than 6.4, and its thickness is less than 1000 dusts.

17. liquid crystal display structures as claimed in claim 12, it is characterized in that, the specific inductive capacity of described second dielectric layer is greater than 12.8, and its thickness is less than 2000 dusts.

18. liquid crystal display structures as claimed in claim 12, it is characterized in that, the specific inductive capacity of described second dielectric layer is greater than 16, and its thickness is less than 2500 dusts.

19. liquid crystal display structures as claimed in claim 12, it is characterized in that, the specific inductive capacity of described second dielectric layer is greater than 19.2, and when its thickness is less than 3500 dust.

20. liquid crystal display structures as claimed in claim 12, it is characterized in that, described pixel electrode comprises spaced one first electrode and one second electrode, and described second dielectric layer covers described first electrode, described second electrode and the substrate surface between described first electrode and described second electrode.

21. liquid crystal display structures as claimed in claim 20, it is characterized in that, described first dielectric layer more comprises multiple projection, is formed on described substrate, and described pixel electrode more comprises the transparency conducting layer be formed on each described projection, to form described first electrode and described second electrode.

22. liquid crystal display structures as claimed in claim 20, is characterized in that, described liquid crystal display structure more comprises one the 3rd electrode, is configured on described substrate, and are positioned at described first electrode and described second base part.