CN103367931B - Infrared multi-wavelength absorber - Google Patents
Infrared multi-wavelength absorber Download PDFInfo
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- CN103367931B CN103367931B CN201310283061.9A CN201310283061A CN103367931B CN 103367931 B CN103367931 B CN 103367931B CN 201310283061 A CN201310283061 A CN 201310283061A CN 103367931 B CN103367931 B CN 103367931B
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- adhesion layer
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Abstract
The invention discloses an infrared multi-wavelength absorber, which comprises a substrate I 1, a structural layer I 2, an adhesive layer I 3, a dielectric layer 4, an adhesive layer II 5 and a structural layer II 6 in sequence, wherein the structural layer II 6 consists of a double cross structure array; the double cross structures are formed by splicing two cross structures; the angles of arrays in both x and y directions are 90 degrees; and the cycles in both x and y directions are of wavelength scale. According to the infrared multi-wavelength absorber, multi-wavelength absorption of an infrared band is realized by using the structure arrays of a single size; the infrared multi-wavelength absorber has a simple structural form and small thickness and is easy in control of the absorption characteristic; and the infrared multi-wavelength absorber has polarization characteristic and has broad application prospect in the application aspect of biosensors. A large volume of experimental data proves that the infrared multi-wavelength absorber has superior performance.
Description
Technical field
The present invention relates to a kind of infra-red electromagnetic wave absorber, particularly relate to and a kind ofly based on diesis structure, there is the infrared multi-wavelength absorber of polarization characteristic, belong to that electromagnetic infrared wave absorbs, the technical field of detection.
Background technology
Infrared absorber is the basic component making the devices such as photodetector, miniature bolometer, photovoltaic thermoconverter and thermal imaging system.Traditional electromagnetic infrared wave resonance absorbing device utilizes sandwich construction to realize, and is separated between structure by quarter-wave dielectric layer.When applying this resonance absorbing device, there are some insoluble problems.First, the thickness requirement of absorber at least reaches quarter-wave, and if these absorbed layers be series connection, in order to broadening performance will significantly increase its thickness.Secondly, the wayward specific absorption spectra characteristic of traditional absorber, must make every effort to searching can the natural material mated with free space impedance.
The perfect Meta Materials that absorbs by its version of design and dimensional parameters, can adjust its effective dielectric constant and magnetic permeability, realizes absorbing close to 100% electromagnetic wave perfection.2008, the people such as Landy tested first and confirm the perfect absorption characteristic of Meta Materials in microwave band, and research is subsequently constantly to shortwave future development.The absorptivity that D.Yu.Shchegolkov etc. utilize fishnet structure to realize terahertz wave band to be greater than 90%, and have studied incident angle and polarization direction to the impact of absorptivity.Li Huang have studied the method realizing broadband Terahertz and absorb from theoretical and experiment aspect, utilize the superposition of different size array of structures, due to the mutual superposition of two groups of assimilation effects, realize broadband absorption.Xianliang Liu, in middle-infrared band, achieves the selectivity narrow-band absorption of space and frequency based on metamaterial structure.The absorbing structure of current Meta Materials comprises cross array, rectangular block array, becket etc., its resonance frequency from microwave band to THz wave, infrared waves, and to develop to visible light wave range.
In the application such as selectivity infrared filter, multi-way detecting array and biochemical detection technique, require that absorber has the characteristic of multi-wavelength absorption.At present, meta-material absorber is superposed by the array of structures of use two kinds of different sizes, and each size array has respective resonance location, and the superposition of the two absorption characteristic realizes dual wavelength and absorbs.But this mode complex structural designs, repeatable poor.When infrared absorber is applied to biology sensor, polarization characteristic contributes to improving the sensitivity detected, and existing infrared absorber is due to its specific application, mostly is polarization insensitive.
Summary of the invention
In order to overcome, traditional resonance absorbing device thickness is large, absorption characteristic is wayward in the present invention, and the shortcoming such as existing Meta Materials dual wavelength absorber structure polarization insensitive, the present invention proposes one to be easy to control thickness and absorption characteristic, and there is the infrared multi-wavelength absorber of polarization characteristic.Diesis array metamaterial modular construction size has tunning effect to its effective optical parametric.Between material surface and incident medium, meet impedance matching condition, reflectivity can be made to be zero; Equivalent refraction rate coefficient imaginary values is enough large, and underlying metal thickness is greater than electromagnetic penetration depth, and transmissivity can be made to be zero; Meet these two conditions and just can obtain optimum assimilation effect.Multi-wavelength absorption characteristic of the present invention has two sources: when being first same polarization direction electromagnetic wave incident, and the multi-wavelength that the resonance of the different order of different wave length causes absorbs; The multi-wavelength introduced when next is different polarization direction electromagnetic wave incident absorbs.
Accompanying drawings 1, accompanying drawing 2 and accompanying drawing 3, technical scheme of the present invention is: a kind of infrared multi-wavelength absorber, comprise substrate I 1, structure sheaf I 2, dielectric layer 4 and structure sheaf II 6 successively, in order to strengthen structure sheaf I 2, adhesiveness between structure sheaf II 6 and dielectric layer 4, at structure sheaf I 2, between structure sheaf II 6 and dielectric layer, add adhesion layer I 3, adhesion layer II 5.Wherein, structure sheaf II 6 is made up of diesis array of structures, and the form of diesis structure is spliced by two cross structures, and x, y are 90 ° to array angle, and the cycle in x, y direction is all in wavelength magnitude.
Beneficial effect of the present invention is: the multi-wavelength utilizing single dimensional structure array to realize infrared band absorbs, and version is simple, and thickness is little, and absorption characteristic easily controls; Infrared multi-wavelength absorber of the present invention has polarization characteristic, for improving the sensitivity of detection during biology sensor.
Accompanying drawing illustrates:
Fig. 1 is the structural representation of the infrared absorber that the present invention proposes;
Fig. 2 is the cross sectional representation of infrared absorber;
Fig. 3 is the cross sectional representation of infrared absorber;
Fig. 4 is absorption characteristic when Ex, Ey two polarization directions are incident in embodiment 1;
Fig. 5 is absorption characteristic when Ex, Ey two polarization directions are incident in embodiment 2;
Fig. 6 is absorption characteristic when Ex, Ey two polarization directions are incident in embodiment 3;
Fig. 7 is absorption characteristic when Ex, Ey two polarization directions are incident in embodiment 4;
Fig. 8 is absorption characteristic when Ex, Ey two polarization directions are incident in embodiment 5;
Fig. 9 is absorption characteristic when Ex, Ey two polarization directions are incident in embodiment 6;
Figure 10 is absorption characteristic when Ex, Ey two polarization directions are incident in embodiment 7;
In figure: 1-substrate, 2-structure sheaf I, 3-adhesion layer I, 4-dielectric layer, 5-adhesion layer II, 6-structure sheaf II.
Specific implementation method
Embodiment 1:
Accompanying drawings 1, accompanying drawing 2, accompanying drawing 3, the infrared double-wave length absorber that the present invention proposes comprises substrate I 1, structure sheaf I 2, adhesion layer I 3, dielectric layer 4, adhesion layer II 5 and structure sheaf II 6 successively, described substrate I 1 material is Si, structure sheaf I 2 and structure sheaf II 6 material are Au, and adhesion layer I 3 and adhesion layer II 5 material are Ti, and dielectric layer 4 material is Al
2o
3; Diesis structure x direction length is 1.2 μm, and y direction length is 0.8 μm, and the width of diesis arm is 0.3 μm, and the x direction cycle is 2 μm, and the y direction cycle is 1.2 μm; The thickness of structure sheaf I 2 and structure sheaf II 6 is 0.1 μm, and dielectric layer 4 thickness is 0.05 μm, and the thickness of adhesion layer I 3 and adhesion layer II 5 is 5nm.Accompanying drawings 4, infrared multi-wavelength absorber realizes the absorptivity of 99.43%, 89.24% and 81.58% at wavelength 2.3 μm, 3.475 μm and 5.975 μm of places.
Embodiment 2:
Accompanying drawings 1, accompanying drawing 2, accompanying drawing 3, the infrared double-wave length absorber that the present invention proposes comprises substrate I 1, structure sheaf I 2, adhesion layer I 3, dielectric layer 4, adhesion layer II 5 and structure sheaf II 6 successively, described substrate I 1 material is Si, structure sheaf I 2 and structure sheaf II 6 material are Au, and adhesion layer I 3 and adhesion layer II 5 material are Ti, and dielectric layer 4 material is Al
2o
3; Diesis structure x direction length is 1.4 μm, and y direction length is 0.8 μm, and the width of diesis arm is 0.3 μm, and the x direction cycle is 2 μm, and the y direction cycle is 1.2 μm; The thickness of structure sheaf I 2 and structure sheaf II 6 is 0.1 μm, and dielectric layer 4 thickness is 0.05 μm, and the thickness of adhesion layer I 3 and adhesion layer II 5 is 5nm.Accompanying drawings 5, infrared multi-wavelength absorber realizes the absorptivity of 99.83%, 88.19% and 76.92% at wavelength 2.525 μm, 3.475 μm and 6.675 μm of places.
Embodiment 3:
Accompanying drawings 1, accompanying drawing 2, accompanying drawing 3, the infrared double-wave length absorber that the present invention proposes comprises substrate I 1, structure sheaf I 2, adhesion layer I 3, dielectric layer 4, adhesion layer II 5 and structure sheaf II 6 successively, described substrate I 1 material is Si, structure sheaf I 2 and structure sheaf II 6 material are Au, and adhesion layer I 3 and adhesion layer II 5 material are Ti, and dielectric layer 4 material is Al
2o
3; Diesis structure x direction length is 1.6 μm, and y direction length is 0.8 μm, and the width of diesis arm is 0.3 μm, and the x direction cycle is 2 μm, and the y direction cycle is 1.2 μm; The thickness of structure sheaf I 2 and structure sheaf II 6 is 0.1 μm, and dielectric layer 4 thickness is 0.05 μm, and the thickness of adhesion layer I 3 and adhesion layer II 5 is 5nm.Accompanying drawings 6, infrared multi-wavelength absorber realizes the absorptivity of 99.34%, 85.34% and 75.62% at wavelength 2.75 μm, 3.4 μm and 7.2 μm of places.
Embodiment 4:
Accompanying drawings 1, accompanying drawing 2, accompanying drawing 3, the infrared double-wave length absorber that the present invention proposes comprises substrate I 1, structure sheaf I 2, adhesion layer I 3, dielectric layer 4, adhesion layer II 5 and structure sheaf II 6 successively, described substrate I 1 material is Si, structure sheaf I 2 and structure sheaf II 6 material are Au, and adhesion layer I 3 and adhesion layer II 5 material are Ti, and dielectric layer 4 material is Al
2o
3; Diesis structure x direction length is 1.8 μm, and y direction length is 0.8 μm, and the width of diesis arm is 0.3 μm, and the x direction cycle is 2 μm, and the y direction cycle is 1.2 μm; The thickness of structure sheaf I 2 and structure sheaf II 6 is 0.1 μm, and dielectric layer 4 thickness is 0.05 μm, and the thickness of adhesion layer I 3 and adhesion layer II 5 is 5nm.Accompanying drawings 7, infrared multi-wavelength absorber realizes the absorptivity of 98.5%, 85.93% and 73.67% at wavelength 3.075 μm, 3.425 μm and 7.775 μm of places.
Embodiment 5:
Accompanying drawings 1, accompanying drawing 2, accompanying drawing 3, the infrared double-wave length absorber that the present invention proposes comprises substrate I 1, structure sheaf I 2, adhesion layer I 3, dielectric layer 4, adhesion layer II 5 and structure sheaf II 6 successively, described substrate I 1 material is Si, structure sheaf I 2 and structure sheaf II 6 material are Au, and adhesion layer I 3 and adhesion layer II 5 material are Cr, and dielectric layer 4 material is Al
2o
3; Diesis structure x direction length is 1.6 μm, and y direction length is 1.0 μm, and the width of diesis arm is 0.3 μm, and the x direction cycle is 2 μm, and the y direction cycle is 1.2 μm; The thickness of structure sheaf I 2 and structure sheaf II 6 is 0.1 μm, and dielectric layer 4 thickness is 0.05 μm, and the thickness of adhesion layer I 3 and adhesion layer II 5 is 5nm.Accompanying drawings 8, infrared multi-wavelength absorber realizes the absorptivity of 99.17%, 92.43% and 69.22% at wavelength 2.975 μm, 4.175 μm and 7.55 μm of places.
Embodiment 6:
Accompanying drawings 1, accompanying drawing 2, accompanying drawing 3, the infrared double-wave length absorber that the present invention proposes comprises substrate I 1, structure sheaf I 2, adhesion layer I 3, dielectric layer 4, adhesion layer II 5 and structure sheaf II 6 successively, described substrate I 1 material is Si, structure sheaf I 2 and structure sheaf II 6 material are Au, and adhesion layer I 3 and adhesion layer II 5 material are Cr, and dielectric layer 4 material is Al
2o
3; Diesis structure x direction length is 1.6 μm, and y direction length is 0.8 μm, and the width of diesis arm is 0.4 μm, and the x direction cycle is 2 μm, and the y direction cycle is 1.2 μm; The thickness of structure sheaf I 2 and structure sheaf II 6 is 0.1 μm, and dielectric layer 4 thickness is 0.05 μm, and the thickness of adhesion layer I 3 and adhesion layer II 5 is 5nm.Accompanying drawings 9, infrared multi-wavelength absorber realizes the absorptivity of 99.17%, 92.43% and 69.22% at wavelength 2.975 μm, 4.175 μm and 7.55 μm of places.
Embodiment 7:
Accompanying drawings 1, accompanying drawing 2, accompanying drawing 3, the infrared double-wave length absorber that the present invention proposes comprises substrate I 1, structure sheaf I 2, adhesion layer I 3, dielectric layer 4, adhesion layer II 5 and structure sheaf II 6 successively, described substrate I 1 material is Si, structure sheaf I 2 and structure sheaf II 6 material are Al, and adhesion layer I 3 and adhesion layer II 5 material are Cr, and dielectric layer 4 material is Al
2o
3; Diesis structure x direction length is 1.6 μm, and y direction length is 0.8 μm, and the width of diesis arm is 0.3 μm, and the x direction cycle is 2 μm, and the y direction cycle is 1.2 μm; The thickness of structure sheaf I 2 and structure sheaf II 6 is 0.1 μm, and dielectric layer 4 thickness is 0.05 μm, and the thickness of adhesion layer I 3 and adhesion layer II 5 is 5nm.Accompanying drawings 10, infrared multi-wavelength absorber realizes the absorptivity of 93.16%, 94.48% and 81.16% at wavelength 2.825 μm, 3.5 μm and 7.3 μm of places.
Embodiment 8:
Accompanying drawings 1, accompanying drawing 2, accompanying drawing 3, the infrared double-wave length absorber that the present invention proposes comprises substrate I 1, structure sheaf I 2, adhesion layer I 3, dielectric layer 4, adhesion layer II 5 and structure sheaf II 6 successively, described substrate I 1 material is Ge, structure sheaf I 2 and structure sheaf II 6 material are Au, and adhesion layer I 3 and adhesion layer II 5 material are Ti, and dielectric layer 4 material is SiO
2; Diesis structure x direction length is 1.6 μm, and y direction length is 0.8 μm, and the width of diesis arm is 0.3 μm, and the x direction cycle is 2 μm, and the y direction cycle is 1.2 μm; The thickness of structure sheaf I 2 and structure sheaf II 6 is 0.1 μm, and dielectric layer 4 thickness is 0.05 μm, and the thickness of adhesion layer I 3 and adhesion layer II 5 is 5nm.
Embodiment 9:
Accompanying drawings 1, accompanying drawing 2, accompanying drawing 3, the infrared double-wave length absorber that the present invention proposes comprises substrate I 1, structure sheaf I 2, adhesion layer I 3, dielectric layer 4, adhesion layer II 5 and structure sheaf II 6 successively, described substrate I 1 material is Ge, structure sheaf I 2 and structure sheaf II 6 material are Au, and adhesion layer I 3 and adhesion layer II 5 material are Ti, and dielectric layer 4 material is SiO
2; Diesis structure x direction length is 1.6 μm, and y direction length is 0.8 μm, and the width of diesis arm is 0.3 μm, and the x direction cycle is 2 μm, and the y direction cycle is 1.2 μm; The thickness of structure sheaf I 2 and structure sheaf II 6 is 0.1 μm, and dielectric layer 4 thickness is 0.05 μm, and the thickness of adhesion layer I 3 and adhesion layer II 5 is 5nm.
Embodiment 10:
Accompanying drawings 1, accompanying drawing 2, accompanying drawing 3, the infrared double-wave length absorber that the present invention proposes comprises substrate I 1, structure sheaf I 2, adhesion layer I 3, dielectric layer 4, adhesion layer II 5 and structure sheaf II 6 successively, described substrate I 1 material is Ge, structure sheaf I 2 and structure sheaf II 6 material are Au, and adhesion layer I 3 and adhesion layer II 5 material are Ti, and dielectric layer 4 material is MgF
2; Diesis structure x direction length is 1.6 μm, and y direction length is 0.8 μm, and the width of diesis arm is 0.3 μm, and the x direction cycle is 2 μm, and the y direction cycle is 1.2 μm; The thickness of structure sheaf I 2 and structure sheaf II 6 is 0.1 μm, and dielectric layer 4 thickness is 0.05 μm, and the thickness of adhesion layer I 3 and adhesion layer II 5 is 5nm.
Embodiment 11:
Accompanying drawings 1, accompanying drawing 2, accompanying drawing 3, the infrared double-wave length absorber that the present invention proposes comprises substrate I 1, structure sheaf I 2, adhesion layer I 3, dielectric layer 4, adhesion layer II 5 and structure sheaf II 6 successively, described substrate I 1 material is Ge, structure sheaf I 2 and structure sheaf II 6 material are Al, and adhesion layer I 3 and adhesion layer II 5 material are Ti, and dielectric layer 4 material is SiO
2; Diesis structure x direction length is 1.6 μm, and y direction length is 0.8 μm, and the width of diesis arm is 0.3 μm, and the x direction cycle is 2 μm, and the y direction cycle is 1.2 μm; The thickness of structure sheaf I 2 and structure sheaf II 6 is 0.1 μm, and dielectric layer 4 thickness is 0.05 μm, and the thickness of adhesion layer I 3 and adhesion layer II 5 is 5nm.
Embodiment 12:
Accompanying drawings 1, accompanying drawing 2, accompanying drawing 3, the infrared double-wave length absorber that the present invention proposes comprises substrate I 1, structure sheaf I 2, adhesion layer I 3, dielectric layer 4, adhesion layer II 5 and structure sheaf II 6 successively, described substrate I 1 material is Ge, structure sheaf I 2 and structure sheaf II 6 material are Al, and adhesion layer I 3 and adhesion layer II 5 material are Ti, and dielectric layer 4 material is MgF
2; Diesis structure x direction length is 1.6 μm, and y direction length is 0.8 μm, and the width of diesis arm is 0.3 μm, and the x direction cycle is 2 μm, and the y direction cycle is 1.2 μm; The thickness of structure sheaf I 2 and structure sheaf II 6 is 0.1 μm, and dielectric layer 4 thickness is 0.05 μm, and the thickness of adhesion layer I 3 and adhesion layer II 5 is 5nm.
Claims (5)
1. an infrared multi-wavelength absorber, comprises substrate I (1), structure sheaf I (2), adhesion layer I (3), dielectric layer (4), adhesion layer II (5) and structure sheaf II (6) successively; Described structure sheaf II (6) is made up of diesis array of structures, and the form of diesis structure is spliced by two cross structures, and x, y are 90 ° to array angle, and the cycle in x, y direction is all in wavelength magnitude.
2. an infrared multi-wavelength absorber as claimed in claim 1, is characterized in that, the material of substrate I (1) is silicon or germanium.
3. an infrared multi-wavelength absorber as claimed in claim 1, is characterized in that, the material of structure sheaf I (2) and structure sheaf II (6) is gold or aluminium.
4. an infrared multi-wavelength absorber as claimed in claim 1, is characterized in that, the material of adhesion layer I (3) and adhesion layer II (5) is titanium or chromium.
5. an infrared multi-wavelength absorber as claimed in claim 1, is characterized in that, dielectric layer (4) material is aluminium oxide, silicon dioxide or magnesium fluoride.
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| CN104297844B (en) * | 2014-10-31 | 2017-03-29 | 中国计量学院 | The terahertz polarization beam splitter of periodic staggered rectangular structure |
| CN104617400A (en) * | 2015-02-02 | 2015-05-13 | 成都飞机工业（集团）有限责任公司 | Embedded wave-absorption composite material structure |
| CN105338798B (en) * | 2015-11-24 | 2019-11-15 | 黄山学院 | Infrared band Tunable dual band/tri- frequency graphene Meta Materials absorption plants and its application method |
| CN105372758B (en) * | 2015-12-02 | 2018-06-19 | 中国计量学院 | Bar shaped terahertz polarization beam splitter |
| CN110021802A (en) * | 2019-04-15 | 2019-07-16 | 上海师范大学 | Filter and preparation method thereof for the detection of carbon ion Terahertz characteristic spectral line |
| CN111239881A (en) * | 2019-09-09 | 2020-06-05 | 上海海事大学 | Metamaterial wave absorber with high reflection in solar spectrum and high absorption in intermediate infrared |
| CN111308588B (en) * | 2020-03-23 | 2022-03-25 | 中北大学 | Multi-band perfect absorber based on surface plasmons |
| CN113219567B (en) * | 2021-05-10 | 2022-09-13 | 东北师范大学 | Long-wave infrared broadband polarization sensitive absorber based on simple grid structure |
| WO2023207891A1 (en) * | 2022-04-25 | 2023-11-02 | 深圳迈塔兰斯科技有限公司 | Optical system |
| CN116953828B (en) * | 2023-09-12 | 2024-03-12 | 之江实验室 | Multiband absorber and design method thereof |
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