CN103367573A - Optoelectronic semiconductor device - Google Patents
Optoelectronic semiconductor device Download PDFInfo
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- CN103367573A CN103367573A CN2013101982563A CN201310198256A CN103367573A CN 103367573 A CN103367573 A CN 103367573A CN 2013101982563 A CN2013101982563 A CN 2013101982563A CN 201310198256 A CN201310198256 A CN 201310198256A CN 103367573 A CN103367573 A CN 103367573A
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Abstract
The invention provides an optoelectronic semiconductor device, belongs to the technical field of semiconductors and solves the problem of effect on the chip yield due to the existing of defect of the existing semiconductor chip crystal. The optoelectronics semiconductor device comprises a substrate and the semiconductor chip; the semiconductor chip is obtained through the method comprising the steps of calculating the maximum value of an effective lighting area A when the crystal defect density D existing in the lighting field exceeds the minimum crystal defect density D calibrated by an epitaxy crystal piece of the optoelectronic semiconductor; selecting the effective lighting area A2 of the semiconductor chip in the maximum value range of the effective lighting area A, and cutting the epitaxy crystal piece by the effective lighting area A2 of the semiconductor chip, thus obtaining the semiconductor chip; and afterwards manufacturing the optoelectronic semiconductor device by using the semiconductor chip. The optoelectronic semiconductor device adopts certain epitaxy pieces with larger defect densities for cutting, so more effective optoelectronic semiconductor chips can be obtained, the efficiency is improved and the waste is reduced.
Description
Technical field
The invention belongs to technical field of semiconductors, relate to opto-electronic semiconductor module, particularly on substrate, not only contain the p-type semiconductor that is provided with the p-type electrode but also contain the semi-conductive semiconductor device of the N-shaped that is provided with the N-shaped electrode.
Background technology
Opto-electronic semiconductor module refers to the various function elements that utilize semi-conductive light-electronic switch effect to make.Its product has light-emitting diode (LED), laser diode (LD), photodetector or photelectric receiver, solar cell etc.
The internal quantum of opto-electronic semiconductor module and crystal defect density have very strong inverse relation, and the existence of crystal defect has affected luminous efficiency.Therefore, for the light source of light output, improve its design and controlled all be very difficult.
Opto-electronic semiconductor module is necessary that it improves luminous efficiency further when using as light source, increase the light output variable.For reaching this purpose, need to all carry out on the basis of few high-quality crystallization at crystal defect and impurity content, and to reduce non-luminiferously again in conjunction with ratio, improve the efficient of inner quantum and then the opto-electronic semiconductor module that high-luminous-efficiency is made in exploitation.
Summary of the invention
The present invention is directed to existing technology and have the problems referred to above, a kind of opto-electronic semiconductor module has been proposed, technical problem to be solved by this invention: how after the more semiconductor epitaxial crystal sheet of crystal defect is cut apart, to obtain opto-electronic semiconductor chip and make not only containing the p-type semiconductor that is provided with the p-type electrode but also contain the semi-conductive semiconductor device of the N-shaped that is provided with the N-shaped electrode, it is optimum that the light-emitting area of this opto-electronic semiconductor module and light output variable reach, thereby it is controlled that opto-electronic semiconductor module can be accomplished, the efficient of high reliability and Geng Gao.
The present invention realizes by following technical proposal: a kind of opto-electronic semiconductor module, it is characterized in that, this semiconductor device comprises substrate and the semiconductor chip that is grown on the substrate, and this semiconductor chip obtains at optoelectronic semiconductor epitaxy junction wafer by the following method:
When the crystal defect density D that exists in luminous field surpasses the minimum crystallization defect concentration D of optoelectronic semiconductor epitaxy junction wafer demarcation, calculate the maximum of efficient lighting area A, in the maximum range of efficient lighting area A, choose semiconductor chip efficient lighting area A2 and with this semiconductor chip efficient lighting area A2 the extension crystalline wafer is cut, and obtain semiconductor chip; Produce to have at substrate with semiconductor chip afterwards and comprise the N-shaped semiconductor that is provided with the N-shaped electrode and comprise the semi-conductive opto-electronic semiconductor module of the p-type that is provided with the p-type electrode.
Can there be crystal defect on the optoelectronic semiconductor epitaxy junction wafer that completes, the existence of crystal defect has affected luminous efficiency, therefore producer goes out the minimum crystallization defect concentration that can calibrate the epitaxial crystallization sheet behind the crystal defect density D on the extension crystalline wafer by equipment Inspection, and the epitaxy junction wafer of judging this minimum crystallization defect concentration according to manufacturing capacity defective products whether, defective products splits the efficient semiconductor number of chips seldom, generally is unworthy cutting apart again and can processes as waste product.Therefore, the output ratio of the opto-electronic semiconductor chip that domestic manufacturer produces is low, and the waste situation is serious.Thereby this opto-electronic semiconductor module also can be cut apart by the above-mentioned method epitaxy junction wafer that some crystal defect density are large and obtains the effective opto-electronic semiconductor chip of a greater number, raises the efficiency, and cuts the waste.And can make the light-emitting area of this opto-electronic semiconductor module and light output variable reach optimum, thereby it is controlled that opto-electronic semiconductor module can be accomplished, the efficient of high reliability and Geng Gao.Semiconductor chip efficient lighting area A2 specifically choose area by actual production the time determine.
In above-mentioned opto-electronic semiconductor module, described substrate is monocrystalline Al
2O
3, monocrystal SiC, monocrystalline GaN, monocrystalline Ga
2O
3, single crystal ZnO, monocrystalline GaAs, monocrystalline InP or single crystalline Si; Or above-mentioned material forms integrated substrate in conjunction with monocrystalline on polycrystalline; Or above-mentioned material forms integrated substrate on noncrystalline in conjunction with monocrystalline.
In above-mentioned opto-electronic semiconductor module, form the semiconductor chip of III group-III nitride semiconductor or Ⅲ-Ⅴ compound semiconductor or group Ⅱ-Ⅵ compound semiconductor on the described substrate, described semiconductor chip comprises luminescent layer, grows to have between substrate and luminescent layer and can reduce the substrate crystal defect to the resilient coating of semiconductor device impact.
In above-mentioned opto-electronic semiconductor module, described III group-III nitride semiconductor refers to contain one or more of GaN, InN or AlN and the III group-III nitride mixed crystal compound semiconductor that can send visible light or ultraviolet light that forms; Described group Ⅱ-Ⅵ compound semiconductor refers to contain one or several and the II that can send visible light or ultraviolet light that the forms-VI compounds of group mixed crystal compound semiconductor of ZnO, ZnS, ZnSe, CdO, MgO, MgZnO, MgS, MgSe or CdS.
In above-mentioned opto-electronic semiconductor module, described Ⅲ-Ⅴ compound semiconductor refers to contain one or more of GaAs, InAs, InP or AlAs and the III that can send visible light or infrared light that forms-V compounds of group mixed crystal compound semiconductor.
In above-mentioned opto-electronic semiconductor module, the minimum value of the crystal defect density that the semi-conductive luminous field of III group-III nitride mixed grain effect compound exists is from 10
4/ cm
2Exponent increase to 10 with 10
8/ cm
2The time, the maximum of luminous field area is also thereupon corresponding to 10
7μ m
2Index with 10 reduces to 10
3μ m
2
In above-mentioned opto-electronic semiconductor module, the minimum value of the crystal defect density that the semi-conductive luminous field of II-VI compounds of group mixed grain effect compound exists is from 10
4/ cm
2Exponent increase to 10 with 10
8/ cm
2The time, the maximum of luminous field area is also thereupon corresponding to 10
7μ m
2Index with 10 reduces to 10
3μ m
2
In above-mentioned opto-electronic semiconductor module, the minimum value of the crystal defect density that the semi-conductive luminous field of III-V compounds of group mixed grain effect compound exists is from 10
1/ cm
2Exponent increase to 10 with 10
5/ cm
2The time, the maximum of luminous field area is also thereupon corresponding to 10
7μ m
2Index with 10 reduces to 10
3μ m
2
In above-mentioned opto-electronic semiconductor module, efficient lighting area A (DA) calculates by semiconductor chip yield formula η～exp, obtain the value range of efficient lighting area A during described semiconductor chip rate of finished products η＞=37%, maximum is the maximum of efficient lighting area A in these value ranges.Rate of finished products more than 37% can be so that most of can be utilized by the optoelectronic semiconductor epitaxy junction wafer as waste product.The maximum of efficient lighting area A is maximum during η=37%.
In above-mentioned semiconductor device, optoelectronic semiconductor epitaxy junction wafer is cut and forms the grid duct by the semiconductor chip efficient lighting area A2 that chooses, cover on the epitaxial loayer section that the side of semiconductor chip exposes with insulation passivating film 8 afterwards, then make the p-type electrode at the p-type contact layer of epitaxial loayer, make the N-shaped electrode at the N-shaped contact layer at the electronic semi-conductor epitaxy junction wafer back side again, again optoelectronic semiconductor epitaxy junction wafer is cut off or the rear formation opto-electronic semiconductor module that fractures.
Compared with prior art, thus the present invention adopt can some crystal defect density are large epitaxial wafer also can cut apart the effective opto-electronic semiconductor chip that obtains a greater number, raise the efficiency, cut the waste.And so that the semi-conductive p-type electrode of p-type is arranged and have the opto-electronic semiconductor module of the semi-conductive N-shaped electrode of N-shaped to accomplish controlled at substrate, the preferably efficient of high reliability and Geng Gao is arranged.
Description of drawings
After Fig. 1 is epitaxial crystallization growth of the present invention, the chart of crystallization internal quantum and crystal defect density relationship.
Fig. 2 is that the crystal defect density of AlGaAs epitaxy junction wafer arrives 10
3/ cm
2After the level, in the luminous field of diameter 40 μ m, the luminance that crystal defect is arranged and form without the luminous field of crystal defect.
Fig. 3 is the parameter of D as crystal defect density, the chart of the rate of finished products η of effective area A and semiconductor chip.
Embodiment
Below be specific embodiments of the invention and by reference to the accompanying drawings, technical scheme of the present invention is further described, but the present invention be not limited to these embodiment.
For high efficiency, high reliability and the high finished product rate that realizes the opto-electronic semiconductor module that the present invention is relevant, when the crystal defect density of luminous part existence surpasses minimum value, must clearly to how to limit the to greatest extent value of luminous part, make it to form effective luminous field.
Specific as follows: as shown in Figure 1, after Fig. 1 is epitaxial crystallization growth of the present invention, the chart of crystallization internal quantum and crystal defect density relationship.Exist strong inverse relation between the defect concentration by the efficient that can find out inner quantum on the chart and crystallization.In the chart, ordinate represents internal quantum, and 1.0 represent 100% luminously, and abscissa represents crystal defect density, and 1E+3 is unit of measurement, and 1E represents 10, and+3 expression indexes are 3, and both 1E+3 was 10
3
GaAs is 1E+3/cm in crystal defect density
-2The time internal quantum approximately be 0.98, crystal defect density is 1E+5/cm
-2The time internal quantum to be down to approximately be 0.4.In Ⅲ-Ⅴ compound semiconductor, as can be seen from Figure 1 AlGaAs epitaxy junction wafer has improved much than the quality of GaAs epitaxy junction wafer under identical crystal defect density, and the crystal defect density that can control AlGaAs in the prior art is 10
3/ cm
2Level.
In the III group-III nitride semiconductor, InGaN is 1E+5/cm in crystal defect density
-2The time internal quantum remain 1, it is less that namely internal quantum is subject to the impact of crystal defect density, until crystal defect density increase 1E+8/cm most
-2The time internal quantum still have 0.6, and along with the InGaN component ratio is different, crystal defect density is at 1E+8/cm
-2The time internal quantum still can bring up to 0.8, even 0.93.
The ZnO epitaxy junction wafer of III group-III nitride semiconductor InGaN epitaxy junction wafer or group Ⅱ-Ⅵ compound semiconductor, compare with Ⅲ-Ⅴ compound semiconductor, after its crystal defect density increased by 1000 times, the efficient of inner quantum can not reduce yet, and was highly stable.
Fig. 2 is that the crystal defect density of AlGaAs epitaxy junction wafer arrives 10
3/ cm
2After the level, in the luminous field of diameter 40 μ m, the luminance that crystal defect is arranged and form without the luminous field of crystal defect.In crystal defect density 10
3/ cm
2In the crystalline wafer of level, can be controlled at 99% degree without the formation ratio in the luminous field of the diameter 40 μ m of crystal defect, realize the rate of finished products of very high semiconductor chip.
Fig. 3 is the parameter (unit/cm of D as crystal defect density
2), set up the chart of efficient lighting area A and rate of finished products η, abscissa represents effective area, and ordinate represents rate of finished products.After namely detecting the crystal defect of semiconducting crystal epitaxial wafer, just can value effective area A just can obtain the chip yield η of this semiconducting crystal epitaxial wafer according to Fig. 3.
During the AlGaAs crystallization, the allowed band of crystal defect density is 10
5D〉10; As shown in Figure 1 with InGaN and AlGaAs crystalline phase relatively, after crystal defect density increased by 1000 times, the efficient of inner quantum can not reduce yet, and was highly stable, so the allowed band of the crystal defect density D of InGaN is 10 during the InGaN crystallization
8D〉10
4The parameter of A as luminous field area, unit of measurement is μ m
2, η is as the rate of finished products of semiconductor chip, and η can (DA) calculate by η～exp.When condition was made as DA=1, e value 2.7 drew the conclusion of η=37%.The numerical value of detected parameters D just can carry out the maximum limit definite value of luminous field area clearly when η=37% is above.
By above-mentioned analysis, this opto-electronic semiconductor module comprises substrate and the semiconductor chip that is grown on the substrate, and this semiconductor chip obtains at optoelectronic semiconductor epitaxy junction wafer by the following method:
When the crystal defect density D that exists in luminous field surpasses the minimum crystallization defect concentration D of optoelectronic semiconductor epitaxy junction wafer demarcation, (DA) calculate the maximum of efficient lighting area A by semiconductor chip yield formula η～exp, in the maximum range of efficient lighting area A, choose semiconductor chip efficient lighting area A2 and with this semiconductor chip efficient lighting area A2 the extension crystalline wafer is cut, and obtain semiconductor chip; Produce to have at substrate with semiconductor chip afterwards and comprise the N-shaped semiconductor that is provided with the N-shaped electrode and comprise the semi-conductive opto-electronic semiconductor module of the p-type that is provided with the p-type electrode.
First optoelectronic semiconductor epitaxy junction wafer is cut and forms the grid duct by the semiconductor chip efficient lighting area A2 that chooses during cutting, cover on the epitaxial loayer section that the side of semiconductor chip exposes with insulation passivating film 8 afterwards, then make the p-type electrode at the p-type contact layer of epitaxial loayer, make the N-shaped electrode at the N-shaped contact layer at the electronic semi-conductor epitaxy junction wafer back side again, again optoelectronic semiconductor epitaxy junction wafer is cut off or the rear formation opto-electronic semiconductor module that fractures.
Wherein, substrate is monocrystalline Al
2O
3, monocrystal SiC, monocrystalline GaN, monocrystalline Ga
2O
3, single crystal ZnO or single crystalline Si; Or above-mentioned material forms integrated substrate in conjunction with monocrystalline on polycrystalline; Or above-mentioned material forms integrated substrate on noncrystalline in conjunction with monocrystalline.Form the semiconductor chip of III group-III nitride semiconductor or Ⅲ-Ⅴ compound semiconductor or group Ⅱ-Ⅵ compound semiconductor at substrate, semiconductor chip comprises luminescent layer, grows to have between substrate and luminescent layer and can reduce the substrate crystal defect to the resilient coating of semiconductor device impact.
The III group-III nitride semiconductor refers to contain one or more of GaN, InN or AlN and the III group-III nitride mixed crystal compound semiconductor that can send visible light or ultraviolet light that forms; The minimum value of the crystal defect density that exists in its luminous field is from 10
4/ cm
2Index with 10 doubly is increased to 10
8/ cm
2The time, the maximum of luminous field area is also corresponding to 10
7μ m
2Index with 10 doubly reduces to 10
3μ m
2, the diameter of luminous part was reduced to below the φ 0.036mm by φ 3.6mm when luminous field was round.
For example, the normal crystallization defect concentration D of the III group-III nitride optoelectronic semiconductor epitaxy junction wafer of a certain model is 10
4, no longer be worth cutting above this optoelectronic semiconductor epitaxy junction wafer behind this crystal defect density D, but as waste disposal.But by above-mentioned method, namely to detect the crystal defect density D of this epitaxy junction wafer be 10 to a slice III group-III nitride optoelectronic semiconductor epitaxy junction wafer
5, the normal crystallization defect concentration D that its crystal defect density D has surpassed this model is 10
4, choose η=37% when above at chart, be 10 according to detected crystal defect density D
5, obtaining rate of finished products η is 10 at the effective area A of 37%-100%
6To 10
3, i.e. effective area A=10
3μ m
2The time rate of finished products 100%, effective area A=10
6μ m
2The time rate of finished products 37%, the maximum that just can determine thus the area in luminous field is 10
6
Described group Ⅱ-Ⅵ compound semiconductor refers to contain one or several and the II that can send visible light or ultraviolet light that the forms-VI compounds of group mixed crystal compound semiconductor of ZnO, ZnS, ZnSe, CdO, MgO, MgZnO, MgS, MgSe or CdS, and the minimum value of the crystal defect density that exists in its luminous field is from 10
4/ cm
2Index with 10 doubly is increased to 10
8/ cm
2The time, the maximum of luminous field area is also corresponding to 10
7μ m
2Index with 10 doubly reduces to 10
3μ m
2, when luminous field was round, the diameter of luminous part was reduced to below the φ 0.036mm by φ 3.6mm, just can determine thus the maximum of the area in luminous field.
Ⅲ-Ⅴ compound semiconductor refers to contain one or more of GaAs, InAs, InP or AlAs and the III that can send visible light or infrared light that forms-V compounds of group mixed crystal compound semiconductor, and the minimum value of the crystal defect density that exists in its luminous field is from 10/cm
2Index with 10 doubly is increased to 10
5/ cm
2The time, the maximum of luminous field area is also corresponding to 10
7μ m
2Index with 10 doubly reduces to 10
3μ m
2, when luminous field was round, the diameter of luminous part was reduced to below the φ 0.036mm by φ 3.6mm, just can determine thus the maximum of the area in luminous field.
Claims (8)
1. an opto-electronic semiconductor module is characterized in that, this semiconductor device comprises substrate and semiconductor chip, and this semiconductor chip obtains at optoelectronic semiconductor epitaxy junction wafer by the following method:
When the crystal defect density D that exists in luminous field surpasses the minimum crystallization defect concentration D of optoelectronic semiconductor epitaxy junction wafer demarcation, calculate the maximum of efficient lighting area A, in the maximum range of efficient lighting area A, choose semiconductor chip efficient lighting area A2 and with this semiconductor chip efficient lighting area A2 the extension crystalline wafer is cut, and obtain semiconductor chip; Produce to have at substrate with semiconductor chip afterwards and comprise the N-shaped semiconductor that is provided with the N-shaped electrode and comprise the semi-conductive opto-electronic semiconductor module of the p-type that is provided with the p-type electrode.
2. opto-electronic semiconductor module according to claim 1 is characterized in that, described substrate is monocrystalline Al
2O
3, monocrystal SiC, monocrystalline GaN, monocrystalline Ga
2O
3, monocrystalline GaAs, monocrystalline InP, single crystal ZnO or single crystalline Si; Or above-mentioned material forms integrated substrate in conjunction with monocrystalline on polycrystalline; Or above-mentioned material forms integrated substrate on noncrystalline in conjunction with monocrystalline.
3. opto-electronic semiconductor module according to claim 1 and 2, it is characterized in that, form the semiconductor chip of III group-III nitride semiconductor or Ⅲ-Ⅴ compound semiconductor or group Ⅱ-Ⅵ compound semiconductor on the described substrate, described semiconductor chip comprises luminescent layer, grows to have between substrate and luminescent layer and can reduce the substrate crystal defect to the resilient coating of semiconductor device impact.
4. opto-electronic semiconductor module according to claim 3, it is characterized in that described III group-III nitride semiconductor refers to contain one or more of GaN, InN or AlN and the III group-III nitride mixed crystal compound semiconductor that can send visible light or ultraviolet light that forms; Described group Ⅱ-Ⅵ compound semiconductor refers to contain one or several and the II that can send visible light or ultraviolet light that the forms-VI compounds of group mixed crystal compound semiconductor of ZnO, ZnS, ZnSe, CdO, MgO, MgZnO, MgS, MgSe or CdS.
5. opto-electronic semiconductor module according to claim 3, it is characterized in that described Ⅲ-Ⅴ compound semiconductor refers to contain one or more of GaAs, InAs, InP or AlAs and the III that can send visible light or infrared light that forms-V compounds of group mixed crystal compound semiconductor.
6. opto-electronic semiconductor module according to claim 4 is characterized in that, the minimum value of the crystal defect density that the semi-conductive luminous field of III group-III nitride mixed grain effect compound exists is from 10
4/ cm
2Exponent increase to 10 with 10
8/ cm
2The time, the maximum of luminous field area is also thereupon corresponding to 10
7μ m
2Index with 10 reduces to 10
3μ m
2
7. opto-electronic semiconductor module according to claim 4 is characterized in that, the minimum value of the crystal defect density that the semi-conductive luminous field of II-VI compounds of group mixed grain effect compound exists is from 10
4/ cm
2Exponent increase to 10 with 10
8/ cm
2The time, the maximum of luminous field area is also thereupon corresponding to 10
7μ m
2Index with 10 reduces to 10
3μ m
2
8. opto-electronic semiconductor module according to claim 5 is characterized in that, the minimum value of the crystal defect density that the semi-conductive luminous field of III-V compounds of group mixed grain effect compound exists is from 10
1/ cm
2Exponent increase to 10 with 10
5/ cm
2The time, the maximum of luminous field area is also thereupon corresponding to 10
7μ m
2Index with 10 reduces to 10
3μ m
2
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| CN101565854A (en) * | 2008-04-25 | 2009-10-28 | 住友电气工业株式会社 | Freestanding III-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrate |
-
2013
- 2013-05-23 CN CN201310198256.3A patent/CN103367573B/en not_active Expired - Fee Related
Patent Citations (5)
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| US20050025204A1 (en) * | 2003-07-31 | 2005-02-03 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting device and method for fabrication thereof |
| CN1819285A (en) * | 2005-02-07 | 2006-08-16 | 日立电线株式会社 | Epitaxial wafer for light emitting diode |
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| CN101192520A (en) * | 2006-11-30 | 2008-06-04 | 住友电气工业株式会社 | Semiconductor device and manufacture method thereof |
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