CN103367471B - A kind of solar cell compound back reflector and preparation method thereof - Google Patents
A kind of solar cell compound back reflector and preparation method thereof Download PDFInfo
- Publication number
- CN103367471B CN103367471B CN201310290834.6A CN201310290834A CN103367471B CN 103367471 B CN103367471 B CN 103367471B CN 201310290834 A CN201310290834 A CN 201310290834A CN 103367471 B CN103367471 B CN 103367471B
- Authority
- CN
- China
- Prior art keywords
- solar cell
- back reflector
- colloidal sol
- plating
- slide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemically Coating (AREA)
Abstract
The invention provides a kind of solar cell compound back reflector and preparation method thereof.By the compound of ZnO and Ni, increase short-circuit current density and the light light path at photoelectric conversion layer, thus obtain a kind of composite back reflecting electrode of function admirable, make it better be utilized.Use material cheap and easy to get; Easy and simple to handle, pollution-free <b>.</b>
Description
Technical field
The invention belongs to technical field of solar batteries, be specially and the present invention relates to a kind of solar cell compound back reflector and preparation method thereof.
Background technology
In recent years, production cost is high becomes with conversion efficiency is low two subject matters restricting solar cell and develop, and back reflector is as the important component part of solar cell, and the quality of its performance will directly have influence on the height of battery conversion efficiency.The metal material that can be used as back reflector at present has Au, Ag, Pt, Ni, Cu etc., and oxide material has In
2o
3, Sn
2o
3, ZnO etc.But Au, Ag, Pt cost is higher, cannot carry out large-scale production, when being used alone, metallic element easily to inside battery diffusion, and then affects the performance of solar cell; In has severe toxicity, expensive, and under hydrogen plasma atmosphere, optical characteristics easily worsens, less stable; Sn is comparatively active, preparation difficulty, and easily poisons substrate.Have in prior art and use ZnO and Ag compound as back electrode, but the cooperation of ZnO, Ag exists serious problems: the enough thick silverskin required by low resistance, the obviously point flow short-circuit in many regions in battery can be caused, energy transformation ratio reduces, and then the rate of finished products of photovoltaic module is too low; And along with passage of time, the Electromigration dispersion of silver can cause a point flow short-circuit to become more serious; Meanwhile, the use of high-purity silver can increase the production cost of photovoltaic module.Different from ZnO/Ag, the back electrode that ZnO/Al makes not only not easily cause shunting, even and if produce shunting, also solve by " shunting slackens " program.Shortcoming is that reflecting power is poor, and photoelectric current is lower, and namely photoelectric conversion efficiency makes us not satisfied.
The solar cell back reflector how preparing a kind of function admirable is the problem of needs solution now.
Summary of the invention
Object of the present invention is exactly defect for above-mentioned existence and provides a kind of solar cell compound back reflector and preparation method thereof.By the compound of ZnO and Ni, increase short-circuit current density and the light light path at photoelectric conversion layer, thus obtain a kind of composite back reflecting electrode of function admirable, make it better be utilized.Use material cheap and easy to get; Easy and simple to handle, pollution-free.
A kind of solar cell compound back reflector of the present invention and preparation method thereof technical scheme is that this composite back reflecting electrode is ZnO/Ni composite back reflecting electrode.
Described back reflector sequentially comprises ZnO film layer and Ni layer.
A preparation method for described solar cell compound back reflector, comprises A) substrate of glass pre-treatment, B) plating, C) colloidal sol preparation, D) spin coating plated film and E) heat treatment step.
Wherein, A) substrate of glass pre-treatment: slide is successively put into the cleaning of acetone, absolute ethyl alcohol and deionized water for ultrasonic, and the slide after drying up puts into SnCl successively respectively
2in solution, PdCl
2leave standstill in solution, in inferior sodium phosphate.
B) plating: by by A) slide after step pre-treatment inserts plating in nickel plating bath.
Step B) described in nickel-plating liquid comprise following composition: 15-30g/L nickel sulfate hexahydrate, 10-25g/L inferior sodium phosphate, 5-10g/L anhydrous sodium acetate, 5-20g/L natrium citricum.
C) colloidal sol preparation: by two acetate hydrate zinc ((CH
3cOO)
2zn2H
2o) isopropyl alcohol (C is dissolved in
3h
8o) after, add monoethanolamine (MEA), above-mentioned mixed liquor is put into 40-80 ° of C water-bath and stir 1h-3h, then ageing 24-72h obtains colloidal sol.
D) spin coating plated film: by by B) sheet glass after step is positioned on the objective table of sol evenning machine, passing through C) colloidal sol that step ageing is good drips on a glass substrate, with post-drying.
E) heat treatment: will D be passed through) after the pre-burning of step rear film, continue D) step, after so repeating coating 2-10 layer, anneal 0.5-2.5h under 250-700 ° of C condition.
Concrete steps are:
A) substrate of glass pre-treatment:
Common slide is successively put into acetone, absolute ethyl alcohol and deionized water for ultrasonic cleaning 5-20min, then dry up for subsequent use, the slide after cleaning is put into SnCl
2in solution, leave standstill 3-8min; Then PdCl is put into
2in solution, leave standstill 5-15min; Finally put into inferior sodium phosphate and leave standstill 10-40s;
B) plating:
By by A) slide after step pre-treatment inserts plating in nickel plating bath; Bath pH value is adjusted to 3-5, and plating temperature is 65-80 ° of C;
C) colloidal sol preparation: compound concentration is the colloidal sol of 0.25-1.80mol/L: by two acetate hydrate zinc ((CH
3cOO)
2zn2H
2o) isopropyl alcohol (C is dissolved in
3h
8o) after, add the equimolar monoethanolamine (MEA) with zinc acetate, above-mentioned mixed liquor is put into 40-80 ° of C water-bath and stir 1h-3h, then ageing 24-72h obtains colloidal sol;
D) spin coating plated film: by by B) sheet glass after step is positioned on the objective table of sol evenning machine, passing through C) colloidal sol that step ageing is good drips on a glass substrate, dries 8-20min subsequently in 60-150 ° of C;
E) heat treatment: will D be passed through) step rear film under 150-400 ° of C after pre-burning, continue D) step, after so repeating coating 2-10 layer, anneal 0.5-2.5h under 250-700 ° of C condition.
Beneficial effect of the present invention is: the present invention is the electricity conversion improving solar cell further, selects ZnO and Ni compound to prepare back electrode of solar cell.Wherein Ni can make the photogenerated current density of solar cell greatly increase, and then increases short-circuit current density, and in air, W metal is more anti-corrosion than Ni metal, and conductivity is better, and cost is lower, therefore selects W metal as the metal level in composite back electrode.ZnO, owing to having light trapping structure, can be used as the tco layer of composite back reflecting electrode, not only can increase the light path of light at photoelectric conversion layer, and can increase the absorption efficiency to sunlight, improves transformation efficiency.In addition, the diffusion of all right barrier metal element of ZnO, improves interface and battery performance.
Therefore by ZnO and Ni compound, adopt electroless plating method and sol-gel process making ZnO/Ni composite back reflecting electrode respectively, increase short-circuit current density and the light light path at photoelectric conversion layer, thus obtain a kind of composite back reflecting electrode of function admirable, make it be used widely.Use material cheap and easy to get, the total cost of obtained every square decimeter of ZnO/Ni composite back reflecting electrode is no more than 10 yuan, and easy and simple to handle, pollution-free.
accompanying drawing illustrates:
Fig. 1 is the DSC curve of embodiment 1ZnO/Ni composite back reflecting electrode nickel coating;
Fig. 2 is the XRD figure of embodiment 1ZnO/Ni composite back reflecting electrode nickel coating;
Fig. 3 is the SEM figure of embodiment 1ZnO/Ni composite back reflecting electrode nickel coating;
Fig. 4 is the SEM figure of embodiment 1ZnO/Ni composite back reflecting electrode.
embodiment:
In order to understand the present invention better, describe technical scheme of the present invention in detail with instantiation below, but the present invention is not limited thereto.
embodiment 1:
Pre-treating technology: the common slide of 2 × 2cm is successively put into the cleaning of acetone, absolute ethyl alcohol and deionized water for ultrasonic, and the ultrasonic cleaning time is 10min; Then dry up for subsequent use, then put into SnCl successively
2in concentration, time of repose is 6min; PdCl
2middle time of repose is 10min; In inferior sodium phosphate, time of repose is 30s.
Plating technology is: by by A) slide after step pre-treatment inserts plating in nickel plating bath, nickel-plating liquid is: 25g/L nickel sulfate hexahydrate, 20g/L inferior sodium phosphate, 5g/L anhydrous sodium acetate, 10g/L natrium citricum are prepared, bath pH value is adjusted to 4.1, and plating temperature is 75 ° of C.
Colloidal sol is prepared: by two acetate hydrate zinc ((CH
3cOO)
2zn2H
2o) isopropyl alcohol (C is dissolved in
3h
8o), after, the equimolar monoethanolamine (MEA) with zinc acetate is added.Above-mentioned mixed liquor is put into 60 ° of C water-baths and stir 2h, then ageing 48h obtains colloidal sol, and collosol concentration is 0.75mol/L.
Film: be positioned over by slide on the objective table of sol evenning machine, drips colloidal sol good for ageing on a glass substrate, dries 10min in 100 ° of C.
Heat treatment: the film of drying after pre-burning, is continued film under 250 ° of C, and so repeat coating 4 layers, namely the 1h that finally anneals under 300 ° of C conditions obtains required film.
Fig. 1 is the DSC curve of embodiment 1ZnO/Ni composite back reflecting electrode nickel coating.As seen from the figure, suddenly increasing or reducing, so coating is crystalline state does not appear in the heat difference of coating between object of reference.
Fig. 2 is the XRD figure of embodiment 1ZnO/Ni composite back reflecting electrode nickel coating.As seen from the figure, only there is (111) face diffraction maximum of Ni in XRD collection of illustrative plates at 44.3 ° of places, do not occurred the associated diffraction peak of Ni, P and other compound, coating has been described completely in crystalline structure.
Fig. 3 is the SEM figure of embodiment 1 embodiment 1ZnO/Ni composite back reflecting electrode nickel coating.As seen from the figure, gained coating is even, continuous, fine and close.
Fig. 4 is the SEM figure of embodiment 1ZnO/Ni composite back reflecting electrode.As seen from the figure, film surface presents netted, and non-overlapping copies between layers, form light trapping structure, be conducive to the reflection increasing light, and then increase the light path in thin film solar cell, improve the electricity conversion of solar cell.
embodiment 2:
Pre-treating technology: the common slide of 2 × 2cm is successively put into the cleaning of acetone, absolute ethyl alcohol and deionized water for ultrasonic, and the ultrasonic cleaning time is 15min; Then dry up for subsequent use, then put into SnCl successively
2in concentration, time of repose is 4min; PdCl
2middle time of repose is 12min; In inferior sodium phosphate, time of repose is 20s.
Plating technology is: by by A) slide after step pre-treatment inserts plating in nickel plating bath, nickel-plating liquid comprises 20g/L nickel sulfate hexahydrate, 13g/L inferior sodium phosphate, 6g/L anhydrous sodium acetate, 12g/L natrium citricum, bath pH value is adjusted to 5.0, and plating temperature is 70 ° of C.
Colloidal sol is prepared: by two acetate hydrate zinc ((CH
3cOO)
2zn2H
2o) isopropyl alcohol (C is dissolved in
3h
8o), after, the equimolar monoethanolamine (MEA) with zinc acetate is added.Above-mentioned mixed liquor is put into 80 ° of C water-baths and stir 1h, then ageing 36h obtains colloidal sol, and collosol concentration is 0.45mol/L.
Film: be positioned on the objective table of sol evenning machine by the slide that pre-treatment is good, drips colloidal sol good for ageing on a glass substrate, dries 15min in 120 ° of C.
Heat treatment: the film of drying after pre-burning, is continued film under 200 ° of C, and so repeat coating 6 layers, namely the 1.5h that finally anneals under 400 ° of C conditions obtains required film.
embodiment 3
A) substrate of glass pre-treatment:
The common slide of 2 × 2cm is successively put into acetone, absolute ethyl alcohol and deionized water for ultrasonic cleaning 18min, then dry up for subsequent use, the slide after cleaning is put into SnCl
2in solution, leave standstill 8min; Then PdCl is put into
2in solution, leave standstill 5min; Finally put into inferior sodium phosphate and leave standstill 10s;
B) plating:
By by A) slide after step pre-treatment inserts plating in nickel plating bath; Bath pH value is adjusted to 3, and plating temperature is 80 ° of C; Described nickel-plating liquid comprises following composition: 15g/L nickel sulfate hexahydrate, 25g/L inferior sodium phosphate, 10g/L anhydrous sodium acetate, 20g/L natrium citricum.
C) colloidal sol preparation: by two acetate hydrate zinc ((CH
3cOO)
2zn2H
2o) isopropyl alcohol (C is dissolved in
3h
8o), after, the equimolar monoethanolamine (MEA) with zinc acetate is added.Above-mentioned mixed liquor is put into 45 ° of C water-baths and stir 3h, then ageing 72h obtains colloidal sol, and collosol concentration is 1.60mol/L.
D) spin coating plated film: by by B) sheet glass after step is positioned on the objective table of sol evenning machine, passing through C) colloidal sol that step ageing is good drips on a glass substrate, dries 16min subsequently in 150 ° of C;
E) heat treatment: will D be passed through) step rear film under 400 ° of C after pre-burning, continue D) step, after so repeating coating 10 layers, anneal 2.5h under 600 ° of C conditions.
Claims (7)
1. a solar cell compound back reflector, is characterized in that, this composite back reflecting electrode is ZnO/Ni composite back reflecting electrode, and described back reflector sequentially comprises ZnO film layer and Ni layer;
The preparation method of described solar cell compound back reflector, comprises A) substrate of glass pre-treatment, B) plating, C) colloidal sol preparation, D) spin coating plated film and E) heat treatment step;
Described A) substrate of glass pre-treatment: slide is successively put into the cleaning of acetone, absolute ethyl alcohol and deionized water for ultrasonic, and the slide after drying up puts into SnCl successively respectively
2in solution, PdCl
2leave standstill in solution, in inferior sodium phosphate.
2. a kind of solar cell compound back reflector according to claim 1, is characterized in that, described B) plating: by by A) slide after step pre-treatment inserts plating in nickel plating bath.
3. a kind of solar cell compound back reflector according to claim 2, it is characterized in that, step B) described in nickel plating bath comprise following composition: 15-30g/L nickel sulfate hexahydrate, 10-25g/L inferior sodium phosphate, 5-10g/L anhydrous sodium acetate, 5-20g/L natrium citricum.
4. a kind of solar cell compound back reflector according to claim 1, it is characterized in that, described C) colloidal sol preparation: after two acetate hydrate zinc are dissolved in isopropyl alcohol, add monoethanolamine, above-mentioned mixed liquor is put into 40-80 DEG C of water-bath and stir 1h-3h, then ageing 24-72h obtains colloidal sol.
5. a kind of solar cell compound back reflector according to claim 1, it is characterized in that, described D) spin coating plated film: by by B) sheet glass after step is positioned on the objective table of sol evenning machine, passing through C) colloidal sol that step ageing is good drips on a glass substrate, with post-drying.
6. a kind of solar cell compound back reflector according to claim 1, it is characterized in that, described E) heat treatment: will D be passed through) after the pre-burning of step rear film, continue D) step, after repetition coating 2-10 layer like this, anneal 0.5-2.5h under 250-700 DEG C of condition.
7. a kind of solar cell compound back reflector according to any one of claim 1-6, is characterized in that, specifically comprise the following steps:
A) substrate of glass pre-treatment:
Common slide is successively put into acetone, absolute ethyl alcohol and deionized water for ultrasonic cleaning 5-20min, then dry up for subsequent use, the slide after cleaning is put into SnCl
2in solution, leave standstill 3-8min; Then PdCl is put into
2in solution, leave standstill 5-15min; Finally put into inferior sodium phosphate and leave standstill 10-40s;
B) plating:
By by A) slide after step pre-treatment inserts plating in nickel plating bath; Bath pH value is adjusted to 3-5, and plating temperature is 65-80 DEG C;
C) colloidal sol preparation:
Compound concentration is the colloidal sol of 0.25-1.80mol/L: after two acetate hydrate zinc are dissolved in isopropyl alcohol, add the equimolar monoethanolamine with zinc acetate, and above-mentioned mixed liquor is put into 40-80 DEG C of water-bath and stir 1h-3h, then ageing 24-72h obtains colloidal sol;
D) spin coating plated film:
By by B) sheet glass after step is positioned on the objective table of sol evenning machine, passing through C) colloidal sol that step ageing is good drips on a glass substrate, dries 8-20min subsequently in 60-150 DEG C;
E) heat treatment:
To D be passed through) step rear film at 150-400 DEG C after pre-burning, continue D) step, after so repeating coating 2-10 layer, anneal 0.5-2.5h under 250-700 DEG C of condition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310290834.6A CN103367471B (en) | 2013-07-11 | 2013-07-11 | A kind of solar cell compound back reflector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310290834.6A CN103367471B (en) | 2013-07-11 | 2013-07-11 | A kind of solar cell compound back reflector and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103367471A CN103367471A (en) | 2013-10-23 |
| CN103367471B true CN103367471B (en) | 2015-11-18 |
Family
ID=49368424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310290834.6A Active CN103367471B (en) | 2013-07-11 | 2013-07-11 | A kind of solar cell compound back reflector and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103367471B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070047089A (en) * | 2005-11-01 | 2007-05-04 | 삼성전자주식회사 | Transparent electrode for a solar cell, preparaton method thereof and a semiconductor electrode comprising the same |
| CN101556973A (en) * | 2008-04-11 | 2009-10-14 | 福建钧石能源有限公司 | Film photovoltaic device and composite electrode thereof |
| CN202103058U (en) * | 2011-04-21 | 2012-01-04 | 杭州天裕光能科技有限公司 | Amorphous silicon thin film solar battery back electrode adopting sandwich structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI379425B (en) * | 2007-12-13 | 2012-12-11 | Nexpower Technology Corp | Translucent solar cell and manufacturing method thereof |
-
2013
- 2013-07-11 CN CN201310290834.6A patent/CN103367471B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070047089A (en) * | 2005-11-01 | 2007-05-04 | 삼성전자주식회사 | Transparent electrode for a solar cell, preparaton method thereof and a semiconductor electrode comprising the same |
| CN101556973A (en) * | 2008-04-11 | 2009-10-14 | 福建钧石能源有限公司 | Film photovoltaic device and composite electrode thereof |
| CN202103058U (en) * | 2011-04-21 | 2012-01-04 | 杭州天裕光能科技有限公司 | Amorphous silicon thin film solar battery back electrode adopting sandwich structure |
Non-Patent Citations (1)
| Title |
|---|
| 溶胶_凝胶法制备锌锡氧化物薄膜材料及其应用;周宏伟;《中国优秀硕士学位论文全文数据库工程科技Ⅰ辑》;20071015(第4期);第34-35页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103367471A (en) | 2013-10-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108796532B (en) | Nickel oxide-cuprous oxide homojunction photocathode, preparation method thereof and application thereof in photocatalysis | |
| CN107482122B (en) | perovskite solar cell and preparation method | |
| CN109103338B (en) | Preparation method of large-area perovskite thin film and battery pack thereof | |
| CN102560686B (en) | Wet etching method for silicon chip and method for producing solar cell | |
| WO2021047673A1 (en) | Cadmium telluride solar cell and preparation method thereof | |
| CN103078010A (en) | Full-non-vacuum process preparation method of copper-zinc-tin-sulfur thin film solar cell | |
| CN103060861A (en) | Method for preparing copper-zinc-tin-sulfur film through co-electrodeposition | |
| CN203503678U (en) | HIT solar cell | |
| CN103367513A (en) | Polycrystalline silicon thin film solar cell and preparation method thereof | |
| CN102610394B (en) | Preparation method of transition metal doped alpha-Fe2O3 nano rod array | |
| CN105449018A (en) | Solar cell and preparation method thereof | |
| CN102157613A (en) | HLF (high square resistance, low surface reflectance, fine metal contact, HLF) crystalline silicon soar cell and preparation method thereof | |
| CN104167469A (en) | Method for manufacturing SnS2/SnS heterojunction thin-film solar cell at a time | |
| CN102839375B (en) | Method for preparing light absorption layer of CuInSe2 (CIS) flexible thin-film solar cell | |
| CN102394258B (en) | Preparing method of high-conductivity front electrode of thin film solar cell | |
| CN207542252U (en) | A kind of crystal silicon solar energy battery structure | |
| CN109301030B (en) | Preparation method of low-cost N-type double-sided battery | |
| CN103872166A (en) | Light trapping structure of copper indium gallium selenium thin film solar cell and preparation method thereof | |
| CN102956722B (en) | Thin-film solar cell | |
| CN103474518B (en) | Multi-hole pyramid anti-reflection structure preparation method and HIT solar cell preparation technology | |
| CN103367471B (en) | A kind of solar cell compound back reflector and preparation method thereof | |
| CN103035771B (en) | N-type MWT solar battery structure and manufacturing process thereof | |
| CN104576824A (en) | Novel method for slotting front grid line electrode of crystalline silicon solar battery and manufacturing method of solar battery | |
| CN102242383B (en) | Post-processing method for electroplating of solar welding strip | |
| CN102610690A (en) | Preparation method for buffer layer material of copper-indium-gallium-selenium thin-film solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |