With the three-dimensional stacked encapsulating structure of the semiconductor device of the two-sided water-cooled of fixture
Technical field
The present invention relates to a kind of semiconductor device, particularly a kind of 3 D intelligent encapsulating structure of the semiconductor device with the two-sided water-cooled of fixture.
Background technology
Semiconductor device especially large power semiconductor device is widely used in light current and forceful electric power field.Along with the development of power device, how to reduce the weight and volume of power device and solve the heat dissipation problem that thing followed high power density brings to be subject to extensive concern in industry.The three-dimension packaging form of semiconductor device and efficient cooling structure are designed to the key factor that the device weight and volume reduces.
At present used semiconductor element planar package and the heat sink volume and weight of aluminium alloy do not satisfy the demands in the traditional structure, on the one hand, the shared volume of planar package is larger, need a large amount of lead-in wire bindings during encapsulation, brought a large amount of lead resistances and spontaneous inductance, thereby increased the generation of heat and improved failure rate; On the other hand, traditional heat sink structure can't satisfy radiating requirements in large electrical device, and needs the heat sink structure of larger volume.Therefore adopt three-dimensional encapsulation and liquid cooling to replace the conventional package structure.
Summary of the invention
The objective of the invention is for the defective that exists in the prior art, a kind of semiconductor device 3 D intelligent encapsulating structure with the two-sided water-cooled of fixture is provided.The present invention includes: comprising: stacked pressuring plate, positioner in the stacked pressuring plate, connector in the stacked pressuring plate, lead terminal, substrate, temperature and pressure-detecting device and water-cooling channel, it is characterized in that described stacked pressuring plate is comprised of cell board and deformable connector, semiconductor element of each cell board encapsulation forms the chip of elementary cell, the size of cell board is according to packed semiconductor element setting, three-dimensional stacked encapsulating structure is comprised of four or more even number stacked pressuring plate lamination closed assembly, each stacked pressuring plate is provided with positioner and encapsulates several semiconductor elements, be bolted between the stacked pressuring plate, each stacked pressuring plate is provided with the temperature and pressure checkout gear, the outermost up and down two ends of stacked pressuring plate of finishing the lamination closed assembly are provided with substrate, be provided with cooling-water duct in the substrate, cooling water drives circulation by pump, and the overall package structure is provided with the input and output lead terminal of semiconductor element.
Both sides are equipped with the conductive buffer layer of the expansion coefficient material identical or close with silicon about the described chip.Such as molybdenum etc., also can use other electric conducting materials that satisfy instructions for use, such as aluminium, copper etc.
Described cell board periphery be provided with groove be distributed in cell board around.
The distressed structure that can in the space, compress or stretch of the three-dimensional form of springs of shrinkage distortion that the deformable connector between stacked pressuring plate and the cell board is shock resistance, anti-vibration, heat resistanceheat resistant is swollen.Or be the hinged shape structure of controlled integral body of structure reduction, namely connector and cell board junction are the mode of being articulated and connected, and can move by external force.
Stacked between described lead terminal and the stacked pressuring plate connects through bolt and nut.
Described pressure-detecting device is pressure sensor, is installed among each stacked pressuring plate.
Cooling-water duct in the described substrate is tree-like or serpentine configuration.
Described stacked pressuring plate is made by punching press, casting or forging.
Advantage of the present invention is the three-dimensional encapsulation of having realized semiconductor device, connects without lead-in wire, reduces line resistance and self inductance that wire-bonded produces, adopts two-side water cooling, has a volume little, and power that can be integrated is large, and coefficient of heat transfer is large.Simultaneously, each stacked pressuring plate can encapsulate semiconductor element any number and measure-alike or different, and the fixed structure that presets prevents that effectively semiconductor element from producing slippage when being subject to external impact, variable connector prevent device when work be subject to impacting, shake, expand with heat and contract with cold etc. and produce be out of shape in addition chip impaired, each stacked pressuring plate has the chip life consumption of temperature and pressure checkout gear in order to prevent from causing because environment for use is improper.This encapsulating structure has intelligent monitoring function, and device temperature, pressure under can the Real-Time Monitoring operating state have improved device reliability, and prolong the useful life of device, are user-friendly to.
Description of drawings
The circuit theory diagrams of Fig. 1 embodiment one;
The structural representation of Fig. 2 stacked pressuring plate A, wherein 2A is the plan structure schematic diagram, and 2B is upper TV structure schematic diagram, and 2C is main TV structure schematic diagram, and 2D is perspective view;
The structural representation of Fig. 3 stacked pressuring plate B, wherein 3A is the plan structure schematic diagram, 3B is perspective view;
The perspective view of Fig. 4 chip and conductive buffer layer sandwich structure, wherein 4A is the plan structure schematic diagram, 4B is perspective view;
Stacked pressuring plate stacked structure schematic diagram among Fig. 5 embodiment one, wherein 5A is perspective view, and 5B is the STRUCTURE DECOMPOSITION schematic diagram, and 5C is the plan structure schematic diagram;
The structural representation of base plate among Fig. 6 embodiment one, wherein 6A is perspective view, and 6B is main TV structure schematic diagram, and 6C is the sectional structure schematic diagram;
The perspective view of Fig. 7 embodiment one, wherein 7A is perspective view, and 7B is the STRUCTURE DECOMPOSITION schematic diagram, and 7C is the plan structure schematic diagram;
The structural representation of base plate among Fig. 8 embodiment two, wherein 8A is perspective view, 8B is main TV structure schematic diagram;
The perspective view of Fig. 9 embodiment two, wherein 9A is perspective view, 9B is the plan structure schematic diagram;
The structural representation of base plate among Figure 10 embodiment three, wherein 10A is perspective view, 10B is main TV structure schematic diagram;
The perspective view of Figure 11 embodiment three, wherein 11A is perspective view, 11B is the plan structure schematic diagram;
The two-dimensional representation of Figure 12 embodiment four;
The experience foreign impacts of Figure 13 embodiment four, shake or expand with heat and contract with cold etc. and cause two-dimensional representation after the distortion;
Among the figure: 1 stacked pressuring plate, 2 cell boards, 3 connectors, 4 grooves, 5 chips, 6 conductive buffer layers, 7 conducting terminals, 8 bolts hole, 9 base plates, 10 fillers.
Embodiment
Embodiment one
Further specify the present embodiment below in conjunction with accompanying drawing:
Referring to Fig. 2~Fig. 7, the present embodiment is the 3 D intelligent encapsulating structure with the semiconductor device of the two-sided water-cooled of fixture.Circuit structure diagram is referring to Fig. 1, and I1~I12 is 12 semiconductor chips, be divided into four layers stacking, every layer of three chip.This structure is by three stacked pressuring plates and two stacked pressuring plates, mutually intersects stacking forming.Referring to Fig. 2, Fig. 3.Each stacked pressuring plate contains 6 module unit plates 2.Stacked pressuring plate 1 is by punching press or forge formation, upper and lower surface all is processed with groove 4, groove 4 is that " mouth " word shape structure distribution is around cell board 2, wherein the stacked pressuring plate 1 of top layer only has lower surface fluted 4, the stacked pressuring plate 1 of the bottom only has upper surface fluted 4, groove 4 be distributed in cell board 2 around, play fixed chip 5.Chip 5 upper and lower surfaces respectively have one deck conductive buffer layer 6, are fixed together by thermocompression bonding, form sandwich structure, referring to Fig. 4.Prevent that chip 5 from breaking when exerting pressure.Chip 5 is placed in the groove of cell board 2 with the sandwich structure that conductive buffer layer 6 consists of, and the cell board groove of two different stacked pressuring plates is corresponding one by one, forms fixing chip 5.The deformable structure that connector 3 is out of shape for shock resistance, anti-vibration, the swollen shrinkage of heat resistanceheat resistant between the cell board 2.Crimping is smooth closely during the situations such as deformable piece kept being subject to foreign impacts at device, shake, expand with heat and contract with cold.Each stacked pressuring plate 1 is equipped with temperature sensor, and pressure sensor is realized Real Time Monitoring and the parameter of device are regulated, and realizes the intellectuality of encapsulating structure, improves dependability and the life-span of device.In addition, in each stacked pressuring plate 1, capacitance sensor is installed, to detect real-time height, is guaranteed that crimping is tight.Stacked pressuring plate 1 is stacked and forms complete circuit structure, referring to Fig. 5.The base plate of a built-in discrete shape water-cooling channel respectively is set, referring to Fig. 6 in the upper and lower surface of stacked structure.Baseplate material is the material with good electrical conductivity and thermal conductivity, and such as copper, aluminium silicon carbide, aluminium, steel, cast iron etc., cooling water is realized circulation in substrate by pump, thereby reaches the effect of two-sided liquid cooling.Be bolted overall structure is applied lasting pressure, realize the 3 D stereo encapsulation.Conducting terminal is realized the input and output of the signal of telecommunication.Referring to Fig. 7.
Embodiment two
Embodiment two is identical with embodiment one, and difference is that water-cooling channel is snakelike.Respectively place the substrate of a built-in snakelike water-cooling channel in the upper and lower surface of stacked structure, referring to Fig. 8.Be bolted overall structure is applied lasting pressure, referring to Fig. 9.
Embodiment three
Embodiment three is identical with embodiment one, and difference is that water-cooling channel is tree-like.Respectively place the substrate of a built-in tree-like water-cooling channel in the upper and lower surface of stacked structure, referring to Figure 10.Be bolted overall structure is applied lasting pressure, referring to Figure 11.
Embodiment four
Embodiment four is identical with embodiment one, and difference is that the connector between the cell board is the controlled integral body of structure reduction, is in particular in that this example is for articulated form, referring to Figure 12.In the distortion that produces that is subject to foreign impacts, shakes or expands with heat and contract with cold be, the hinge point movement that can thereupon deform, this moment, filler guaranteed the planarization of crimping, referring to Figure 13.
Embodiment five
Embodiment five is identical with embodiment one, and difference is the number of stacked pressuring plate, is mutually to intersect stacking forming with N+1 cell board A and N cell board B.N is even number arbitrarily.The three-dimension packaging structure that consists of encapsulates 2N layer semiconductor element altogether.