CN103367190B - Application vacuum environment detects the method for photoresistance and silicon nitride film compatible degree - Google Patents
Application vacuum environment detects the method for photoresistance and silicon nitride film compatible degree Download PDFInfo
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- CN103367190B CN103367190B CN201310264748.8A CN201310264748A CN103367190B CN 103367190 B CN103367190 B CN 103367190B CN 201310264748 A CN201310264748 A CN 201310264748A CN 103367190 B CN103367190 B CN 103367190B
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Abstract
The invention provides a kind of method applying vacuum environment detection photoresistance and silicon nitride film compatible degree, comprising: by wafer flow to the step defining silicon nitride film on silicon chip; Multiple wafers surface being formed with silicon nitride film are placed in the vacuum environment scheduled time of multiple different vacuum degree respectively; By standard atmospheric pressure respectively divided by the air pressure of described multiple different vacuum degree, obtain the tenuity factor of multiple different ratio as described multiple different vacuum degree; For described multiple wafer, adopt and need the photoresistance raw material detected to carry out photoetching process, and after photoetching, check the underdevelop defect of photoresistance, identify in described multiple wafer and do not have defective zero defect wafer and defective defective wafer; Compatible degree between photoresistance and silicon nitride film is defined as: be more than or equal to the maximum tenuity factor in the vacuum environment residing for zero defect wafer, and is less than the minimum tenuity factor in the vacuum environment residing for defective wafer.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of method applying vacuum environment detection photoresistance and silicon nitride film compatible degree.
Background technology
Along with the development of integrated circuit technology, relevant semiconductor manufacturing material category gets more and more, photoresistance (PR, photoresist) the most frequently used in such as semiconductor manufacturing photoetching process.Meanwhile, photoetching process has very important status in semiconductor fabrication, this is because the most figure of device all will be dominated by photoetching.
Meanwhile, it is the most also contact the most closely that photoetching process and thin-film technique have usually, and photoresistance directly directly contacts with silicon oxide film or silicon nitride (SIN) film usually.
Different photoresistance types often has different compatible degrees from silicon nitride film.If photoresistance and silicon nitride film are lower than certain compatible degree, often produce potential baneful influence in various degree, as Fig. 1 and Fig. 2 (the SIN residual defects representing photoresistance residual defects respectively and caused by photoresistance residual defects) is depicted as the underdevelop defect of photoresistance that between certain photoresistance and silicon nitride film, compatible degree deficiency produces.If can not Timeliness coverage get rid of this kind of impact in the semiconductor device development stage, serious loss will be produced when large-scale production.
But the method for the compatible degree detected between photoresistance and silicon nitride film only stops and checks critical size and defect etc. after exposure, this method can not detect the problem that just can occur when skew occurs for large-scale production or online production processing procedure etc. usually.
Therefore, the method for the compatible degree that can provide between a kind of more effective detection photoresistance and silicon nitride film is provided.
Summary of the invention
Technical problem to be solved by this invention is for there is above-mentioned defect in prior art, provides the method for the compatible degree between a kind of more effective detection photoresistance and silicon nitride film.
According to a first aspect of the invention, provide a kind of method applying vacuum environment detection photoresistance and silicon nitride film compatible degree, it comprises:
First step: by wafer flow to the step defining silicon nitride film on silicon chip;
Second step: multiple wafers surface being formed with silicon nitride film are placed in the vacuum environment scheduled time of multiple different vacuum degree respectively.
Third step: by standard atmospheric pressure respectively divided by the air pressure of described multiple different vacuum degree, obtains the tenuity factor of multiple different ratio as described multiple different vacuum degree;
4th step: for described multiple wafer, adopts and needs the photoresistance raw material detected to carry out photoetching process, and after photoetching, check the underdevelop defect of photoresistance, identify in described multiple wafer and do not have defective zero defect wafer and defective defective wafer;
5th step: the compatible degree between photoresistance and silicon nitride film is defined as: be more than or equal to the maximum tenuity factor in the vacuum environment residing for zero defect wafer, and be less than the minimum tenuity factor in the vacuum environment residing for defective wafer.
Preferably, described first step by wafer flow to blocking layer of metal silicide forming step.
Preferably, the described scheduled time is little between two hours between one.
Preferably, the described scheduled time is one hour.
Preferably, the described scheduled time is two hours.
According to a second aspect of the invention, a kind of photoetching method that have employed the method for above-mentioned application vacuum environment detection photoresistance and silicon nitride film compatible degree is provided.
The present invention advantageously using the standard of tenuity factor as the compatible degree between photoresistance and silicon nitride film, by silicon nitride film being placed in specific vacuum degree environment the standard time as measuring the necessary condition of compatible degree; And the situation determination photoresistance of photoresistance residual defects and the compatible degree of silicon nitride film thus provide the method for the compatible degree between a kind of more effective detection photoresistance and silicon nitride film after detecting photoetching process.
Accompanying drawing explanation
By reference to the accompanying drawings, and by reference to detailed description below, will more easily there is more complete understanding to the present invention and more easily understand its adjoint advantage and feature, wherein:
Fig. 1 and Fig. 2 schematically shows the underdevelop defect of photoresistance.
Fig. 3 schematically shows and applies the flow chart that vacuum environment detects the method for photoresistance and silicon nitride film compatible degree according to the preferred embodiment of the invention.
It should be noted that, accompanying drawing is for illustration of the present invention, and unrestricted the present invention.Note, represent that the accompanying drawing of structure may not be draw in proportion.Further, in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention clearly with understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
Know-why of the present invention is, because silicon nitride film is containing NH
3micel, and be NH with the low principal element causing photoresistance poisoning of photoresistance compatible degree
3chemical composition in micel and photoresistance reacts, and causes photoetching process can not to develop completely removal.Silicon nitride film is after vacuum environment process, and surface will enrichment of N H in various degree
3micel, enrichment degree increases with the enhancing of vacuum degree.This characteristic is utilized to introduce the following method detecting the compatible degree of photoresistance and silicon nitride film.
Fig. 3 schematically shows and applies the flow chart that vacuum environment detects the method for photoresistance and silicon nitride film compatible degree according to the preferred embodiment of the invention.
Specifically, as shown in Figure 3, the method applying vacuum environment detection photoresistance and silicon nitride film compatible degree according to the preferred embodiment of the invention comprises:
First step S1: by wafer flow to the step (that is, silicon chip defining silicon nitride film) needing to detect, such as blocking layer of metal silicide forming step.
Second step S2: multiple wafers surface being formed with silicon nitride film are placed in the vacuum environment scheduled time of multiple different vacuum degree respectively.
Such as, hour scheduled time for standard can be got, certainly can select At All Other Times section as the scheduled time, such as two hours; Preferably, the scheduled time is little between two hours between one.
Third step S3: by standard atmospheric pressure respectively divided by the air pressure of described multiple different vacuum degree, obtains the tenuity factor of multiple different ratio as described multiple different vacuum degree.That is:
Tenuity factor=standard pressure/vacuum degree air pressure
4th step S4: for described multiple wafer, the photoresistance raw material adopting needs to detect conveniently operation carry out photoetching process, and after photoetching, check the underdevelop defect of photoresistance, and identify in described multiple wafer and do not have defective zero defect wafer and defective defective wafer;
5th step S5: the compatible degree between photoresistance and silicon nitride film is defined as: be more than or equal to the maximum tenuity factor in the vacuum environment residing for zero defect wafer, and be less than the minimum tenuity factor in the vacuum environment residing for defective wafer.
That is, when silicon nitride film have place the scheduled time in a certain specific tenuity factor environment and there is no photoresistance residual defects time, then judge that the compatible degree of photoresistance and silicon nitride film is more than or equal to described specific tenuity factor ring.When silicon nitride film have place the scheduled time in a certain specific tenuity factor environment and have photoresistance residual defects time, then judge that the compatible degree of photoresistance and silicon nitride film is less than described specific tenuity factor ring.
As can be seen here, the numerical approximation of photoresistance and silicon nitride film can be obtained by described method.
More particularly, for example, for the multiple tenuity factor K1, the K2 that increase successively, K3 ... Kn, if not there is defect after being like this in the wafer under tenuity factor K1, K2, and tenuity factor K3 ... there is defect in the wafer under Kn, then the compatible degree of photoresistance and silicon nitride film is more than or equal to K2 and is less than K3 after being like this.And the compatible degree numerical value of photoresistance and silicon nitride film is higher, then illustrate that two kinds of materials are less by influences of fluctuations such as external environments.
When practical semiconductor is produced, the compatible degree of different photoresistance raw material and silicon nitride film can be detected by adopting said method, photoresist is selected in conjunction with the tenuity factor that may run in production process (such as electron microscope is taken pictures), selected photoresist and the compatible degree of specific silicon nitride film are greater than the tenuity factor of online common vacuum environment, this, by greatly reducing by two kinds of low impacts caused manufacturing process of compatible degree, provides safeguard with Yield lmproved for semiconductor manufactures online.
The present invention advantageously using the standard of tenuity factor as the compatible degree between photoresistance and silicon nitride film, by silicon nitride film being placed in specific vacuum degree environment the standard time as measuring the necessary condition of compatible degree; And the situation determination photoresistance of photoresistance residual defects and the compatible degree of silicon nitride film thus provide the method for the compatible degree between a kind of more effective detection photoresistance and silicon nitride film after detecting photoetching process.
According to another preferred embodiment of the invention, present invention also offers a kind of photoetching method that have employed the method for above-mentioned application vacuum environment detection photoresistance and silicon nitride film compatible degree.
Be understandable that, although the present invention with preferred embodiment disclose as above, but above-described embodiment and be not used to limit the present invention.For any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the technology contents of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (6)
1. apply the method that vacuum environment detects photoresistance and silicon nitride film compatible degree, it is characterized in that comprising:
First step: by wafer flow to the step defining silicon nitride film on silicon chip;
Second step: multiple wafers surface being formed with silicon nitride film are placed in the vacuum environment scheduled time of multiple different vacuum degree respectively;
Third step: by standard atmospheric pressure respectively divided by the air pressure of described multiple different vacuum degree, obtains the tenuity factor of multiple different ratio as described multiple different vacuum degree;
4th step: for described multiple wafer, adopts and needs the photoresistance raw material detected to carry out photoetching process, and after photoetching, check the underdevelop defect of photoresistance, identify in described multiple wafer and do not have defective zero defect wafer and defective defective wafer;
5th step: the compatible degree between photoresistance and silicon nitride film is defined as: be more than or equal to the maximum tenuity factor in the vacuum environment residing for zero defect wafer, and be less than the minimum tenuity factor in the vacuum environment residing for defective wafer.
2. application vacuum environment according to claim 1 detects the method for photoresistance and silicon nitride film compatible degree, it is characterized in that, described first step is by wafer flow to blocking layer of metal silicide forming step, and described silicon nitride film is blocking layer of metal silicide.
3. application vacuum environment according to claim 1 and 2 detects the method for photoresistance and silicon nitride film compatible degree, and it is characterized in that, the described scheduled time is little between two hours between one.
4. application vacuum environment according to claim 1 and 2 detects the method for photoresistance and silicon nitride film compatible degree, and it is characterized in that, the described scheduled time is one hour.
5. application vacuum environment according to claim 1 and 2 detects the method for photoresistance and silicon nitride film compatible degree, and it is characterized in that, the described scheduled time is two hours.
6. a photoetching method, is characterized in that have employed the method that application vacuum environment according to claim 1 and 2 detects photoresistance and silicon nitride film compatible degree.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1221981A (en) * | 1997-12-30 | 1999-07-07 | 国际商业机器公司 | Method and sysetm for semiconductor waper fabrication process real-time in-situ supervision |
| CN1455439A (en) * | 2002-01-24 | 2003-11-12 | 株式会社日立制作所 | Mask making method and method for making semiconductor integrated circuit device |
| CN101273443A (en) * | 2005-09-26 | 2008-09-24 | 应用材料公司 | Hydrogen treatment to improve photoresist adhesion and rework consistency |
| KR101170759B1 (en) * | 2010-05-11 | 2012-08-03 | 세메스 주식회사 | Method for treating substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100481180B1 (en) * | 2002-09-10 | 2005-04-07 | 삼성전자주식회사 | Photoresist removal method |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1221981A (en) * | 1997-12-30 | 1999-07-07 | 国际商业机器公司 | Method and sysetm for semiconductor waper fabrication process real-time in-situ supervision |
| CN1455439A (en) * | 2002-01-24 | 2003-11-12 | 株式会社日立制作所 | Mask making method and method for making semiconductor integrated circuit device |
| CN101273443A (en) * | 2005-09-26 | 2008-09-24 | 应用材料公司 | Hydrogen treatment to improve photoresist adhesion and rework consistency |
| KR101170759B1 (en) * | 2010-05-11 | 2012-08-03 | 세메스 주식회사 | Method for treating substrate |
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