CN103367087B - 自动化离子束空闲 - Google Patents
自动化离子束空闲 Download PDFInfo
- Publication number
- CN103367087B CN103367087B CN201310104256.2A CN201310104256A CN103367087B CN 103367087 B CN103367087 B CN 103367087B CN 201310104256 A CN201310104256 A CN 201310104256A CN 103367087 B CN103367087 B CN 103367087B
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/043—Beam blanking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0802—Field ionization sources
- H01J2237/0805—Liquid metal sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
- H01J2237/0817—Microwaves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30472—Controlling the beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31749—Focused ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
- H01J37/243—Beam current control or regulation circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/436,916 | 2012-03-31 | ||
| US13/436,916 US9123500B2 (en) | 2012-03-31 | 2012-03-31 | Automated ion beam idle |
| US13/436916 | 2012-03-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103367087A CN103367087A (zh) | 2013-10-23 |
| CN103367087B true CN103367087B (zh) | 2017-10-20 |
Family
ID=47997215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310104256.2A Active CN103367087B (zh) | 2012-03-31 | 2013-03-28 | 自动化离子束空闲 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9123500B2 (enExample) |
| EP (1) | EP2645402A3 (enExample) |
| JP (1) | JP6227257B2 (enExample) |
| CN (1) | CN103367087B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201618153A (zh) * | 2014-09-03 | 2016-05-16 | Nuflare Technology Inc | 多重帶電粒子束的遮沒裝置，多重帶電粒子束描繪裝置，及多重帶電粒子束的不良射束遮蔽方法 |
| CN105047512B (zh) * | 2015-05-29 | 2017-03-15 | 光驰科技(上海)有限公司 | 具备多层载物能力的离子束刻蚀系统及其刻蚀方法 |
| DE102017202339B3 (de) * | 2017-02-14 | 2018-05-24 | Carl Zeiss Microscopy Gmbh | Strahlsystem mit geladenen Teilchen und Verfahren dafür |
| CN117352196A (zh) * | 2017-06-07 | 2024-01-05 | 华盛顿大学 | 等离子体约束系统及使用方法 |
| JP7455857B2 (ja) * | 2019-03-22 | 2024-03-26 | アクセリス テクノロジーズ， インコーポレイテッド | 液体金属イオン源 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3337729A (en) * | 1964-11-27 | 1967-08-22 | Richard E Thomas | Method and apparatus for investigating variations in surface work function by electron beam scanning |
| US3896362A (en) * | 1970-10-21 | 1975-07-22 | Street Graham S B | Light-beam steering apparatus |
| US5126163A (en) * | 1990-09-05 | 1992-06-30 | Northeastern University | Method for metal ion implantation using multiple pulsed arcs |
| US5338939A (en) * | 1992-01-13 | 1994-08-16 | Fujitsu Limited | Charged particle beam exposure including a heat blocking partition positioned near deflecting coils |
| US5825035A (en) | 1993-03-10 | 1998-10-20 | Hitachi, Ltd. | Processing method and apparatus using focused ion beam generating means |
| US5378899A (en) * | 1993-10-07 | 1995-01-03 | Kimber; Eugene L. | Ion implantation target charge control system |
| US5982101A (en) | 1997-06-27 | 1999-11-09 | Veeco Instruments, Inc. | Charged-particle source, control system, and process using gating to extract the ion beam |
| US7326445B2 (en) * | 2000-11-29 | 2008-02-05 | Sii Nanotechnology Inc. | Method and apparatus for manufacturing ultra fine three-dimensional structure |
| US7479630B2 (en) * | 2004-03-25 | 2009-01-20 | Bandura Dmitry R | Method and apparatus for flow cytometry linked with elemental analysis |
| EP1439566B1 (en) * | 2003-01-17 | 2019-08-28 | ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam apparatus and method for operating the same |
| US6914386B2 (en) * | 2003-06-20 | 2005-07-05 | Applied Materials Israel, Ltd. | Source of liquid metal ions and a method for controlling the source |
| FR2864628B1 (fr) * | 2003-12-30 | 2006-02-17 | Commissariat Energie Atomique | Systeme de detection de rayonnements a comptage d'impulsions a double remise a zero |
| US7781947B2 (en) * | 2004-02-12 | 2010-08-24 | Mattson Technology Canada, Inc. | Apparatus and methods for producing electromagnetic radiation |
| US7241361B2 (en) | 2004-02-20 | 2007-07-10 | Fei Company | Magnetically enhanced, inductively coupled plasma source for a focused ion beam system |
| US7230240B2 (en) * | 2004-08-31 | 2007-06-12 | Credence Systems Corporation | Enhanced scanning control of charged particle beam systems |
| US7491947B2 (en) * | 2005-08-17 | 2009-02-17 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving performance and extending lifetime of indirectly heated cathode ion source |
| US20070120076A1 (en) * | 2005-10-11 | 2007-05-31 | Mks Instruments Inc. | Integrated ionizers for process metrology equipment |
| US7667209B2 (en) | 2006-07-06 | 2010-02-23 | Hitachi High-Technologies Corporation | Focused ION beam apparatus |
| WO2008094297A2 (en) * | 2006-07-14 | 2008-08-07 | Fei Company | A multi-source plasma focused ion beam system |
| JP2008166137A (ja) * | 2006-12-28 | 2008-07-17 | Sii Nanotechnology Inc | 集束イオンビーム装置 |
| JP2008176984A (ja) * | 2007-01-17 | 2008-07-31 | Hitachi High-Technologies Corp | イオンビーム加工装置 |
| EP2124244B1 (en) * | 2008-05-21 | 2011-08-03 | ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Ultra high precision measurement tool with control loop |
| US8253118B2 (en) * | 2009-10-14 | 2012-08-28 | Fei Company | Charged particle beam system having multiple user-selectable operating modes |
| US8642974B2 (en) * | 2009-12-30 | 2014-02-04 | Fei Company | Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation |
| US8124942B2 (en) * | 2010-02-16 | 2012-02-28 | Fei Company | Plasma igniter for an inductively coupled plasma ion source |
-
2012
- 2012-03-31 US US13/436,916 patent/US9123500B2/en active Active
-
2013
- 2013-02-27 JP JP2013037547A patent/JP6227257B2/ja active Active
- 2013-03-28 CN CN201310104256.2A patent/CN103367087B/zh active Active
- 2013-03-28 EP EP20130161508 patent/EP2645402A3/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| EP2645402A3 (en) | 2015-03-25 |
| JP2013214502A (ja) | 2013-10-17 |
| US9123500B2 (en) | 2015-09-01 |
| EP2645402A2 (en) | 2013-10-02 |
| US20130256553A1 (en) | 2013-10-03 |
| JP6227257B2 (ja) | 2017-11-08 |
| CN103367087A (zh) | 2013-10-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |