CN103360076A - Metamaterial substrate and preparation method thereof - Google Patents
Metamaterial substrate and preparation method thereof Download PDFInfo
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- CN103360076A CN103360076A CN201210097055XA CN201210097055A CN103360076A CN 103360076 A CN103360076 A CN 103360076A CN 201210097055X A CN201210097055X A CN 201210097055XA CN 201210097055 A CN201210097055 A CN 201210097055A CN 103360076 A CN103360076 A CN 103360076A
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Abstract
The invention discloses a metamaterial substrate which comprises a flat-sheet material and a reflecting layer on the surface thereof. The invention also discloses a preparation method of a metamaterial, which comprises the following steps: mixing P2O5, ZnO, NaF and B2O3, thus preparing glass powder; mixing silicon nitride powder and the glass powder, thus preparing a presintering body; performing hot pressed sintering on the presintering body to obtain the flat-sheet material; and firing a metal slurry layer on the surface of the flat-sheet material, thus preparing the metamaterial substrate. The metamaterial substrate prepared by the invention has the advantages of low dielectric constant, low dielectric loss, low thermal expansion coefficient, high temperature resistance, favorable heat-conducting property and the like; and when the metamaterial substrate is prepared into the metamaterial, the metamaterial can be used at high temperature.
Description
Technical field
The present invention relates to super Material Field, more particularly, relate to a kind of super material substrate and preparation method thereof.
Background technology
Silicon nitride glass pottery has the advantages such as specific inductivity is low, dielectric loss is little, thermal expansivity is little, high temperature resistant, heat conductivility is good, and its intensity can maintain high temperature always and do not descend, and is the ideal material of the high temperature resistant substrate of preparation.
Super material refers to artificial composite structure or the matrix material that some have the not available extraordinary physical properties of natural materials.Structurally ordered design by on the key physical yardstick of material can break through the restriction of some apparent natural law, thereby obtains to exceed the meta-materials function of the intrinsic common character of nature.Super material character and function mainly come from its inner structure but not consist of their material, therefore are design and synthetic super material, and people have carried out a lot of research work.2000, the people such as the Smith of University of California pointed out that the composite structure of the metal wire of periodic arrangement and open loop syntonizer (SRR) can realize that DIELECTRIC CONSTANT ε and magnetic permeability μ simultaneously for negative two negative material, also claim LHM.The Application Areas of super material is very extensive, can be used for dull and stereotyped satellite antenna.At present, mainly be by making microstructure at printed circuit board (PCB) (PCB), still, the use temperature of pcb board is lower, can not at high temperature use, so adopt the PCB substrate can not at high temperature use as the super material of super material substrate.
Summary of the invention
Technical problem to be solved by this invention is, for the existing defective that adopts the PCB substrate can not at high temperature use as the super material of super material substrate, a kind of super material substrate is provided, and this super material substrate has the advantages such as specific inductivity is low, dielectric loss is little, thermal expansivity is little, high temperature resistant, heat conductivility is good.
The present invention also provides a kind of preparation method of super material substrate.
The technical solution adopted for the present invention to solve the technical problems is: a kind of preparation method of super material substrate said method comprising the steps of:
A, with P
2O
5, ZnO, NaF, B
2O
3Be mixed with into glass powder;
B, beta-silicon nitride powder is mixed with into the presintering body with described glass powder;
C, described presintering body heat pressed sinter plate material into;
D, at the surperficial burning infiltration layer of metal slurry of described plate material, be prepared into super material substrate.
Further, based on P
2O
5, ZnO, NaF, B
2O
3Total mole number, described P
2O
5Account for 20～35%, ZnO accounts for 35～45%, NaF accounts for 20～25%, B
2O
3Account for 5～10%.
Further, based on P
2O
5, ZnO, NaF, B
2O
3Total mole number, described P
2O
5Account for 25%, ZnO accounts for 45%, NaF accounts for 20%, B
2O
3Account for 10%.
Further, based on the total mass number of described glass powder and beta-silicon nitride powder, described glass powder accounts for 5wt%～15wt%.
A kind of super material substrate, described super material substrate comprises plate material and reflecting layer, described reflecting layer is positioned at the surface of described plate material.
Further, described reflector material is metal.
Further, described metal comprises copper, silver and aluminium.
Further, described reflecting layer is by forming at described plate material surface burning infiltration layer of metal slurry.
A kind of super material substrate of the present invention and preparation method thereof, adopt the super material substrate of the method preparation to have the advantages such as specific inductivity is low, dielectric loss is little, thermal expansivity is little, high temperature resistant, heat conductivility is good, and should prepare super material by super material substrate, so that super material can at high temperature use.
Description of drawings
Fig. 1 is a kind of super material substrate preparation method's of the present invention process flow sheet.
Embodiment
A kind of super material substrate of the present invention, this substrate comprises plate material and reflecting layer, wherein, the reflecting layer is positioned at the surface of plate material.
Usually the material in reflecting layer adopts metallic substance, and relatively more conventional have copper, silver or aluminium, a preferably copper in the present embodiment.This copper reflecting layer is by forming at plate material surface burning infiltration layer of metal slurry, namely obtaining super material substrate after the cooling.
As shown in Figure 1, be a kind of super material substrate preparation method's of the present invention process flow sheet.Based on P
2O
5, ZnO, NaF, B
2O
3Total mole number, with P
2O
520～35%, ZnO 35～45%, NaF 20～25%, B
2O
35～10% batchings are mixed, and add ethanol and carry out ball milling 2h, oven dry, and put into corundum crucible, and in high-temperature electric resistance furnace, be heated to 1400 ℃, and be incubated two hours, make glass melt clarification homogenizing; After glass melt is poured into water quenching, add ethanol ball milling 4h after, dry 200 mesh sieves of crossing are prepared into glass powder; Based on the total mass number of glass powder and beta-silicon nitride powder, with glass powder according to 5wt%～15wt% with after beta-silicon nitride powder mixes, add ethanol wet-milling 8h after, drying is crossed 60 mesh sieves, is prepared into the presintering body; Adopt the method for hot pressed sintering to be prepared into the plate material of desired shape and size the presintering body, processing parameter is: 1500 ℃ of the highest sintering temperatures, 30MPa, insulation 1h; At a surface brush copper of plate material, and toast burning infiltration in infra-red furnace, about 550 ℃ of burning infiltration temperature so that copper can be attached on the substrate securely, are finished the preparation and fabrication of the super material substrate of silicon nitride.
Resulting super material substrate has the advantages such as specific inductivity is low, dielectric loss is little, thermal expansivity is little, high temperature resistant, heat conductivility is good.With the super material of its preparation, so that super material can at high temperature use.
Embodiment 1
Based on P
2O
5, ZnO, NaF, B
2O
3Total mole number, with P
2O
525%, ZnO 45%, NaF 20%, B
2O
310% batching is mixed, and add ethanol and carry out ball milling 2h, oven dry, and put into corundum crucible, and in high-temperature electric resistance furnace, be heated to 1400 ℃, and be incubated two hours, make glass melt clarification homogenizing; After glass melt is poured into water quenching, add ethanol ball milling 4h after, dry 200 mesh sieves of crossing are prepared into glass powder; Based on the total mass number of glass powder and beta-silicon nitride powder, with glass powder according to 10wt% with after beta-silicon nitride powder mixes, add ethanol wet-milling 8h after, drying is crossed 60 mesh sieves, is prepared into the presintering body; Adopt the method for hot pressed sintering to be prepared into the plate material of desired shape and size the presintering body, processing parameter is: 1500 ℃ of the highest sintering temperatures, 30MPa, insulation 1h; At a surface brush copper of plate material, and toast burning infiltration in infra-red furnace, about 550 ℃ of burning infiltration temperature so that copper can be attached on the substrate securely, are finished the preparation and fabrication of the super material substrate of silicon nitride.
Resulting super material substrate has the advantages such as specific inductivity is low, dielectric loss is little, thermal expansivity is little, high temperature resistant, heat conductivility is good.With the super material of its preparation, so that super material can be wear-resistant high temperature resistant, can be at life-time service and dust storm in 800 ℃ of the high temperature, life-time service under the severe environment such as drying.
Embodiment 2
Based on P
2O
5, ZnO, NaF, B
2O
3Total mole number, with P
2O
535%, ZnO 35%, NaF 25%, B
3O
35% batching is mixed, and add ethanol and carry out ball milling 2h, oven dry, and put into corundum crucible, and in high-temperature electric resistance furnace, be heated to 1400 ℃, and be incubated two hours, make glass melt clarification homogenizing; After glass melt is poured into water quenching, add ethanol ball milling 4h after, dry 200 mesh sieves of crossing are prepared into glass powder; Based on the total mass number of glass powder and beta-silicon nitride powder, with glass powder according to 15wt% with after beta-silicon nitride powder mixes, add ethanol wet-milling 8h after, drying is crossed 60 mesh sieves, is prepared into the presintering body; Adopt the method for hot pressed sintering to be prepared into the plate material of desired shape and size the presintering body, processing parameter is: 1500 ℃ of the highest sintering temperatures, 30MPa, insulation 1h; At a surface brush copper of plate material, and toast burning infiltration in infra-red furnace, about 550 ℃ of burning infiltration temperature so that copper can be attached on the substrate securely, are finished the preparation and fabrication of the super material substrate of silicon nitride.
Resulting super material substrate has the advantages such as specific inductivity is low, dielectric loss is little, thermal expansivity is little, high temperature resistant, heat conductivility is good.With the super material of its preparation, so that super material can be wear-resistant high temperature resistant, can be at life-time service and dust storm in 800 ℃ of the high temperature, life-time service under the severe environment such as drying.
Embodiment 3
Based on P
2O
5, ZnO, NaF, B
2O
3Total mole number, with P
2O
530%, ZnO 40%, NaF 22%, B
2O
38% batching is mixed, and add ethanol and carry out ball milling 2h, oven dry, and put into corundum crucible, and in high-temperature electric resistance furnace, be heated to 1400 ℃, and be incubated two hours, make glass melt clarification homogenizing; After glass melt is poured into water quenching, add ethanol ball milling 4h after, dry 200 mesh sieves of crossing are prepared into glass powder; Based on the total mass number of glass powder and beta-silicon nitride powder, with glass powder according to 15wt% with after beta-silicon nitride powder mixes, add ethanol wet-milling 8h after, drying is crossed 60 mesh sieves, is prepared into the presintering body; Adopt the method for hot pressed sintering to be prepared into the plate material of desired shape and size the presintering body, processing parameter is: 1500 ℃ of the highest sintering temperatures, 30MPa, insulation 1h; At a surface brush copper of plate material, and toast burning infiltration in infra-red furnace, about 550 ℃ of burning infiltration temperature so that copper can be attached on the substrate securely, are finished the preparation and fabrication of the super material substrate of silicon nitride.
Resulting super material substrate has the advantages such as specific inductivity is low, dielectric loss is little, thermal expansivity is little, high temperature resistant, heat conductivility is good.With the super material of its preparation, so that super material can be wear-resistant high temperature resistant, can be at life-time service and dust storm in 800 ℃ of the high temperature, life-time service under the severe environment such as drying.
The above is described embodiments of the invention by reference to the accompanying drawings; but the present invention is not limited to above-mentioned embodiment; above-mentioned embodiment only is schematic; rather than restrictive; those of ordinary skill in the art is under enlightenment of the present invention; not breaking away from the scope situation that aim of the present invention and claim protect, also can make a lot of forms, these all belong within the protection of the present invention.
Claims (8)
1. the preparation method of a super material substrate is characterized in that, said method comprising the steps of:
A, with P
2O
5, ZnO, NaF, B
2O
3Be mixed with into glass powder;
B, beta-silicon nitride powder is mixed with into the presintering body with described glass powder;
C, described presintering body heat pressed sinter plate material into;
D, at the surperficial burning infiltration layer of metal slurry of described plate material, be prepared into super material substrate.
2. the preparation method of described a kind of super material substrate according to claim 1 is characterized in that, based on P
2O
5, ZnO, NaF, B
2O
3Total mole number, described P
2O
5Account for 20～35%, ZnO accounts for 35～45%, NaF accounts for 20～25%, B
2O
3Account for 5～10%.
3. the preparation method of described a kind of super material substrate according to claim 2 is characterized in that, based on P
2O
5, ZnO, NaF, B
2O
3Total mole number, described P
2O
5Account for 25%, ZnO accounts for 45%, NaF accounts for 20%, B
2O
3Account for 10%.
4. the preparation method of described a kind of super material substrate according to claim 1 is characterized in that, based on the total mass number of described glass powder and beta-silicon nitride powder, described glass powder accounts for 5wt%～15wt%.
5. a super material substrate is characterized in that, described super material substrate comprises that described reflecting layer is positioned at the surface of described plate material by plate material and the reflecting layer of the described method preparation of claim 1.
6. a kind of super material substrate according to claim 5 is characterized in that, described reflector material is metal.
7. a kind of super material substrate according to claim 6 is characterized in that, described metal comprises copper, silver and aluminium.
8. according to claim 5 to the described a kind of super material substrate of 7 any one, it is characterized in that, described reflecting layer is by forming at described plate material surface burning infiltration layer of metal slurry.
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|---|---|---|---|
| CN201210097055XA CN103360076A (en) | 2012-04-05 | 2012-04-05 | Metamaterial substrate and preparation method thereof |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202168148U (en) * | 2011-06-30 | 2012-03-14 | 深圳光启高等理工研究院 | Handheld China mobile multimedia broadcasting (CMMB) terminal |
-
2012
- 2012-04-05 CN CN201210097055XA patent/CN103360076A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202168148U (en) * | 2011-06-30 | 2012-03-14 | 深圳光启高等理工研究院 | Handheld China mobile multimedia broadcasting (CMMB) terminal |
Non-Patent Citations (4)
| Title |
|---|
| 周曦亚等: "氮化硅和微晶玻璃复合材料的研究", 《中国陶瓷》 * |
| 李志进等: "低介电常数NaF-ZnO-P2O5-B2O3玻璃的研究", 《玻璃与搪瓷》 * |
| 杨娟等: "低温共烧基板材料研究进展", 《材料导报》 * |
| 陈兴宇等: "玻璃/陶瓷体系低温共烧陶瓷的研究进展", 《佛山陶瓷》 * |
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Application publication date: 20131023 |