CN103345057A - Miniature bridge-type structure and preparation method thereof - Google Patents
Miniature bridge-type structure and preparation method thereof Download PDFInfo
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- CN103345057A CN103345057A CN2013102151529A CN201310215152A CN103345057A CN 103345057 A CN103345057 A CN 103345057A CN 2013102151529 A CN2013102151529 A CN 2013102151529A CN 201310215152 A CN201310215152 A CN 201310215152A CN 103345057 A CN103345057 A CN 103345057A
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Abstract
The invention provides a miniature bridge-type structure and a preparation method thereof. The miniature bridge-type structure comprises four cantilever beams, a metal bridge floor, four metal piers and a substrate. Each cantilever beam is of an L-shaped structure, one ends of the cantilever beams are fixedly connected with the metal piers in a perpendicular mode, and the other ends of the cantilever beams are connected with the metal bridge floor; the metal bridge floor and the cantilever beams are located in the same plane, the metal bridge floor is hung on the substrate through the four cantilever beams, and a cavity structure is formed between the lower bottom face of the metal bridge floor and the substrate. The method induces the steps of preparing the metal piers on the clean substrate surface, coating the substrate surface where the metal piers are formed with a sacrificial layer, carrying out photoetching treatment on the sacrificial layer, then removing the portions, on the tops of the metal piers, of the sacrificial layer to expose the tops of the metal piers, carrying out solidified treatment on the sacrificial layer, preparing the metal bridge floor on the solidified sacrificial layer, removing the portion, at the bottom of the metal bridge floor, of the sacrificial layer to form a cavity, and building the bridge-type structure. The miniature bridge-type structure is large in tuning range and good in bridge floor parallelism.
Description
Technical field
The invention belongs to micro-electromechanical system field, more specifically, relate to a kind of miniature bridge architecture and preparation method thereof.
Background technology
At MEMS (micro electro mechanical system) (Micro Electro Mechanical Systems, MEMS) in, miniature tunable F-P cavity filter is the tunable optical filter spare of a kind of passband, have that volume is little, in light weight, to insert loss low, response is fast, and tuning range is wide, the fineness advantages of higher, be widely used in spaceborne, the airborne ir imaging spectral analysis filtering, military, civilian important application arranged, be subjected to the extensive attention of domestic and international research institution at present.In the optical communication field, Minitype F-P chamber adjustable wave filter can be used as dense wavelength division multiplexing (Dense Wavelenth Division Multiplexing, demultiplexing DWDM), signal demodulation simultaneously; In sensory field of optic fibre, can be used as displacement, strain sensing devices, can also play an important role as the Wavelength demodulation device of fiber-optic grating sensor.In addition, in fields such as fiber lasers, the Minitype F-P tunable optic filter also has important use.
Now, developed into by near infrared based on the tunable optic filter technology in little F-P chamber in infrared and far-infrared spectrum.The direction of technical development is to realize wide spectral range, high resolving power, low-power consumption, low cost and the Highgrade integration of device.Believe that in future soon the commercialization on a large scale of little F-P chamber adjustable wave filter technology is widely used in various industries.
What the Infra Tec GmbH company of Germany adopted is bulk silicon technological, and two silicon chips are binded with SU-8 glue, prepares single Minitype F-P chamber adjustable wave filter, and device and detector carry out integrated, is used for infrared acquisition.The people such as Dmitry A.Kozak in California, USA university Santa Cruz branch school also begin the research of this respect.Also just finished design effort now, actual technology preparation is also underway.They prepare to adopt bulk silicon technological to prepare bigger filter unit structure.
Make Minitype F-P chamber adjustable wave filter, critical process is the depth of parallelism in F-P chamber, and the tunable range of device, the depth of parallelism in F-P chamber, directly influence filter effect, the variation range of F-P chamber semi-girder influences the tuning range of device, and it is narrow to may detect spectral range, does not reach extensively tuning purpose.
The F-P chamber that the bulk silicon technological bonding is made, be two integrated, tuning range is limited, making apparatus requires high.
Summary of the invention
At the defective of prior art, the invention provides a kind of miniature bridge architecture, be intended to solve the bad problem of the tunable range depth of parallelism little and the F-P chamber in Minitype F-P chamber in the prior art.
The invention provides a kind of miniature bridge architecture, comprise four semi-girders, metal bridge floor, four metal bridge piers and substrate; Each semi-girder is L type structure, and an end of semi-girder is connected with a metal bridge pier vertical fixing, and the other end is connected with the metal bridge floor; The metal bridge floor is square, and metal bridge floor and semi-girder are positioned at same plane, and four semi-girders hang on the metal bridge floor on the substrate and form cavity structure between the bottom surface of metal bridge floor and substrate.
Further, the material of described semi-girder is the metallic elastic shape-changing material.
The above technical scheme of conceiving by the present invention, compared with prior art, because the bridge architecture technology of preparation is simple, less demanding to equipment, do not need to be RIE and anti-carve technology, it is not high enough to have solved F-P chamber cavity height, and tuning range is big inadequately, the F-P chamber depth of parallelism is good inadequately, and two disengaging latch intersections become the problem in preparation F-P chamber.
The present invention also provides a kind of preparation method of miniature bridge architecture, comprises the steps:
S1: the substrate surface in cleaning prepares the metal bridge pier;
S2: apply sacrifice layer at the substrate surface that is formed with described metal bridge pier; The height of described sacrifice layer equals the height of described metal bridge pier;
S3: described sacrifice layer carried out the top of the sacrifice layer at metal bridge pier top being removed and exposing the metal bridge pier after the photoetching treatment;
S4: sacrifice layer is cured processing;
S5: the sacrifice layer preparation metal bridge floor after curing;
S6: remove the sacrifice layer of described metal bridge floor bottom and form bridge architecture.
Further, step S1 is specially:
S11: the substrate surface in cleaning applies one deck photoresist formation photoresist film; And photoresist film is carried out photoetching treatment form the bridge pier hole; The degree of depth in described bridge pier hole is more than or equal to the height of metal bridge pier;
S12: with metal filled bridge pier hole;
S13: the metal bridge pier is peeled off and formed to the photoresist film after adopting stripping technology to bridge pier hole filling metal.
Further, sacrifice layer adopts the Photosensitive polyimide in step S2.
Further, step S5 is specially:
S51: the sacrifice layer after curing applies one deck photoresist and forms photoresist film, and photoresist film is carried out photoetching treatment formation bridge deck structure figure; The thickness of described bridge deck structure figure is more than or equal to the thickness of metal bridge floor;
S52: with metal filled bridge deck structure figure;
S53: adopt stripping technology that the metal bridge floor is peeled off and formed to the photoresist film that the bridge floor figure is filled with metal.
The present invention can obtain the height height of bridge architecture jackshaft, and tunable range is big, the effect that the depth of parallelism of bridge is good, and be highly integrated effect.And after having solved the elastic cantilever deformation of F-P chamber, the problem of the depth of parallelism can well keep the depth of parallelism in F-P chamber, reaches tunable filter effect.
Description of drawings
Fig. 1 is the synoptic diagram of the miniature bridge architecture that provides of the embodiment of the invention;
Fig. 2 is the vertical view of the miniature bridge architecture that provides of the embodiment of the invention;
Fig. 3 is preparation method's realization flow figure of the miniature bridge architecture that provides of the embodiment of the invention;
Fig. 4 is the sub-process figure of step S1 among the preparation method of the miniature bridge architecture that provides of the embodiment of the invention;
Fig. 5 is the sub-process figure of step S5 among the preparation method of the miniature bridge architecture that provides of the embodiment of the invention;
Fig. 6 is the structural representation of each process step correspondence in the manufacture craft flow process of the miniature bridge architecture that provides of the embodiment of the invention; (A) expression substrat structure synoptic diagram; (B) be illustrated in the structural representation that is coated with photoresist on the substrate; (C) expression is formed with the structural representation in bridge pier hole; (D) be illustrated in the structural representation that the bridge pier hole is filled metal and formed the metal bridge pier; (E) structural representation of metal bridge pier is exposed in expression behind the stripping photoresist; (F) structural representation of the light-sensitive polyimide that is complementary of expression spin coating thickness and bridge pier height; (G) expression is removed the polyimide photoresist at bridge pier top and is exposed the structural representation at bridge pier top; (H) the expression spin coating has the structural representation of ENPI photoresist; (I) expression forms the structural representation of bridge floor figure; (J) structural representation of formation metal bridge floor structure graph behind the expression stripping photoresist; (K) structural representation of representing to remove the polyimide under the bridge floor and forming bridge architecture.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explaining the present invention, and be not used in restriction the present invention.
The bridge architecture in Minitype F-P provided by the invention chamber is single integrated, bridge floor depth of parallelism height, tunable range is big, less demanding to element manufacturing equipment, do not need etching technics equipment, do not need to do chemically mechanical polishing (CMP) technology, and with wafer bonding technology, and can make big face battle array structure, be easy to detector integrated.Making apparatus requirement height, two deficiencies integrated, that tuning range is little have been overcome.
As depicted in figs. 1 and 2, this miniature bridge architecture comprises four semi-girders, metal bridge floor, four metal bridge piers and substrate; Each semi-girder is L type structure, and an end of semi-girder is connected with a metal bridge pier vertical fixing, and the other end is connected with the metal bridge floor; The metal bridge floor is square, and metal bridge floor and semi-girder are positioned at same plane, and four semi-girders hang on the metal bridge floor on the substrate and form cavity structure between the bottom surface of metal bridge floor and substrate.
The present invention is according to the requirement of near infrared spectrum tuning range, and in conjunction with laboratory existing equipment condition, the imaging spectral separation function is finished in the filtering of realization light beam, selects the long adjustable micro-filter structure in epirelief formula chamber for use.Owing to adopt cantilever beam structure, has only semi-girder generation deformation, center not deformation of bridge floor makes to the influence of center bridge floor (movable barrier film) less, deformation takes place simultaneously for four semi-girders and the center bridge floor of drive is mobile in the vertical direction, the depth of parallelism that guarantees central plane is unaffected, bridge architecture is applied to form in the F-P chamber, makes that the tunable range in Minitype F-P chamber is big because the elastic deformation scope of semi-girder is big, bridge pier is high, grow up in the chamber.
In embodiments of the present invention, semi-girder and be the metallic elastic shape-changing material can be nickel-cadmium, aluminium, gold, Ni, Cr, Ti, platinum or other elastic deformation material.Substrate 6 can be silicon substrate or quartz substrate.
Miniature bridge architecture provided by the invention not only adapts to infrared field can also be widely used in optical-fibre communications field.Different according to the shape-changing material that applied environment and semi-girder are selected, the chamber in F-P chamber is long also different, and for example: when being applied to the infrared acquisition field, chamber length is generally 1 micron～6 microns.The deformation range of elastic deformation material is more big, and the chamber is long more long; The deformation range of shape-changing material is more little, and the chamber is long more short.
As shown in Figure 3, the present invention is a kind of preparation method of miniature bridge architecture also, specifically comprises the steps:
S1: the substrate surface in cleaning prepares the metal bridge pier;
S2: apply sacrifice layer at the substrate surface that is formed with described metal bridge pier; The height of described sacrifice layer equals the height of described metal bridge pier;
S3: described sacrifice layer carried out the top of the sacrifice layer at metal bridge pier top being removed and exposing the metal bridge pier after the photoetching treatment;
S4: sacrifice layer is cured processing;
S5: the sacrifice layer preparation metal bridge floor after curing;
S6: remove the sacrifice layer of metal bridge floor bottom and form bridge architecture.
Wherein, as shown in Figure 4, step S1 is specially:
S11: the substrate surface in cleaning applies one deck photoresist formation photoresist film; And photoresist film is carried out photoetching treatment form the bridge pier hole; The degree of depth in bridge pier hole is more than or equal to the height of metal bridge pier;
S12: with metal filled bridge pier hole; Metal filled height is less than the thickness of photoresist film;
S13: the metal bridge pier is peeled off and formed to the photoresist film after adopting stripping technology to bridge pier hole filling metal.
As one embodiment of the present of invention, in step S2, sacrifice layer can adopt polyimide, adopts the Photosensitive Kapton in the embodiment of the invention; Owing to will carry out photoetching to it, so adopt this photosensitive polyimide film.The height of the height of sacrifice layer and metal bridge pier is suitable, if the height of sacrifice layer is greater than the height of metal bridge pier, then the bridge pier top can not be exposed, and influences the technology of follow-up bridging face; If the height of sacrifice layer is less than the height of metal bridge pier, sacrifice layer and bridge pier have big difference and can produce step, make bridge pier and semi-girder junction rupture.
In step S3, described sacrifice layer carried out the top of the sacrifice layer at metal bridge pier top being removed and exposing the metal bridge pier after the photoetching treatment; Compare with existing process, fairly simple, less demanding to equipment, do not need etching apparatus, only be the character of having utilized the polyimide photoetching.
In step S4, when sacrifice layer adopts polyimide, polyimide is carried out the imidization processing make the mechanical property of polyimide and mechanical property can both satisfy the subsequent technique requirement.
Wherein, as shown in Figure 5, step S5 is specially:
S51: the sacrifice layer after curing applies one deck photoresist and forms photoresist film, and photoresist film is carried out photoetching treatment formation bridge floor figure;
S52: with metal filled bridge floor figure; Described metal filled height is less than the thickness of photoresist film;
S53: adopt stripping technology that the metal bridge floor is peeled off and formed to the photoresist film that the bridge floor figure is filled with metal.
Make photosensitive polyimide film earlier because prior art adopts, make the metal bridge pier again, the height that does not reach 2 microns causes adjustable extent narrow; The present invention adopts earlier preparation metal bridge pier to make sacrifice layer again, can reach required height, makes the height height in F-P chamber, and the chamber is long, and greater than 2 microns, makes that the adjustable extent in F-P chamber is big.Prior art adopts RIE to anti-carve the sacrifice layer that technology is removed metal bridge pier top, and complex process is to adopt chemistry and physical bombardment method to cause other sacrifice layer to be affected because RIE anti-carves technology, influences subsequent technique; The present invention carries out after the photoetching treatment sacrifice layer at metal bridge pier top being removed to sacrifice layer, and other sacrifice layer can not be affected.
For the preparation method of the miniature bridge architecture that the embodiment of the invention provides further is described, existing details are as follows in conjunction with Fig. 1 and Fig. 6:
(1) as Fig. 6 (A), clean substrate 6 surfaces, remove surface blot, activating surface.
(2) as Fig. 6 (B), at substrate surface, spin coating ENPI photoresist can be selected different sol evenning machine rotating speeds according to different thickness requirements.
(3) as Fig. 6 (C), utilize the ultraviolet photolithographic machine, ENPI glue is passed through uv-exposure with the mask version, develop, form the bridge pier hole.
(4) as Fig. 6 (D), the bridge pier hole is filled, make metal bridge pier 3,4.
(5) as Fig. 6 (E), ENPI glue is carried out stripping technology, photoresist is removed, and exposes the metal bridge pier at silicon chip.
(6) as Fig. 6 (F), the spin coating light-sensitive polyimide, thickness and bridge pier height are complementary.
(7) as Fig. 6 (G), utilize the ultraviolet photolithographic machine, light-sensitive polyimide is carried out mask, uv-exposure, develop, remove the polyimide photoresist at bridge pier top, expose the bridge pier top, and polyimide is carried out annealing process, imidization is handled.
(8) as Fig. 6 (H), spin coating ENPI photoresist.
(9) as Fig. 6 (I), utilize the ultraviolet photolithographic machine, ENPI glue is carried out mask exposure, develop, form the bridge floor figure.
(10) as Fig. 6 (J), litho pattern is carried out plated film, peel off, form metal bridge floor structure graph.
(11) as Fig. 6 (K), utilize removing of photoresist by plasma machine equipment, remove the polyimide under the bridge floor, form cavity 5 between bridge floor 1 and the substrate 6, preparation forms bridge architecture.
As shown in Figure 1, 2, semi-girder 1 and metal bridge floor 2 adopt the NI-G film to make on same surface level; One end of semi-girder 1 and 2 one-tenth on metal bridge floor " L " type, on the other end frame metal bridge pier 3, other semi-girder by that analogy, the semi-girder of four ends is sling the metal bridge floor; The metal bridge floor passes through four end points framves of semi-girder on four bridge piers, is suspended on the substrate 6, forms cavity 5 between bridge floor 1 and the substrate 6.
128 * 128 battle array micro-bridge structures have been made at silicon and quartz substrate, infrared field during this structure is mainly used in; The parameter of micro-bridge structure is as shown in Table 1:
| Structural parameters | Numerical value |
| The array scale | 128×128 |
| The micro-bridge structure size | 120×120um 2 |
| Bridge floor thickness | 0.5um |
| The microbridge height | 2um |
Table one
Specifically comprise the steps:
(1) cleans substrate surface, carry out surface activation process;
(2) at the thick ENPI glue of substrate surface spin coating one deck 5um of cleaning, form the ENPI film, the ENPI film is carried out photoetching treatment, the mask version forms ENPI bridge pier hole, and the bridge pier hole has 5um dark;
(3) with metal filled bridge pier hole, metal charge has the 2um height; Peel off the ENPI film with peeling off (lift off) technology, form the metal bridge pier, bridge pier has the 2um height;
(4) again at the thick photosensitive polyimide film of substrate surface spin coating one deck 2um, with bridge pier quite the height;
(5) Kapton is carried out photoetching treatment, behind the exposure imaging, the photosensitive polyimide film at bridge pier top is removed the top of exposing the metal bridge pier;
(6) polyimide being carried out imidization handles;
(7) make bridge deck structure.On same surface level, the ENPI glue that spin coating one deck 3um is thick again forms bridge floor ENPI film substantially for bridge pier and Kapton;
(8) bridge floor ENPI film is carried out photoetching, form the bridge floor figure;
(9) use magnetron sputtering plating, the bridge floor figure is carried out metal filled, peel off the ENPI film with peeling off (lift off) technology, form the metal pattern configuration of bridge floor;
(10) with the polyimide of oxygen plasma removal bridge floor bottom, constitute cavity and also form micro-bridge structure.
Those skilled in the art will readily understand; the above only is preferred embodiment of the present invention; not in order to limiting the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a miniature bridge architecture is characterized in that, comprises four semi-girders, metal bridge floor, four metal bridge piers and substrate;
Each semi-girder is L type structure, and an end of semi-girder is connected with a metal bridge pier vertical fixing, and the other end is connected with the metal bridge floor;
The metal bridge floor is square, and metal bridge floor and semi-girder are positioned at same plane, and four semi-girders hang on the metal bridge floor on the substrate, and forms cavity structure between the bottom surface of metal bridge floor and substrate.
2. bridge architecture as claimed in claim 1 is characterized in that, the material of described semi-girder is the metallic elastic shape-changing material.
3. the preparation method of a miniature bridge architecture is characterized in that, comprises the steps:
S1: the substrate surface in cleaning prepares the metal bridge pier;
S2: apply sacrifice layer at the substrate surface that is formed with described metal bridge pier; The height of described sacrifice layer equals the height of described metal bridge pier;
S3: described sacrifice layer is carried out photoetching treatment, with the sacrifice layer removal at metal bridge pier top and the top of exposing the metal bridge pier;
S4: sacrifice layer is cured processing;
S5: the sacrifice layer preparation metal bridge floor after curing;
S6: remove the sacrifice layer of described metal bridge floor bottom and form bridge architecture.
4. preparation method as claimed in claim 3 is characterized in that, step S1 is specially:
S11: the substrate surface in cleaning applies one deck photoresist formation photoresist film; And photoresist film is carried out photoetching treatment form the bridge pier hole; The degree of depth in described bridge pier hole is more than or equal to the height of metal bridge pier;
S12: with metal filled bridge pier hole;
S13: the metal bridge pier is peeled off and formed to the photoresist film after adopting stripping technology to bridge pier hole filling metal.
5. preparation method as claimed in claim 3 is characterized in that, sacrifice layer adopts the Photosensitive polyimide in step S2.
6. preparation method as claimed in claim 4 is characterized in that, step S5 is specially:
S51: the sacrifice layer after curing applies one deck photoresist and forms photoresist film, and photoresist film is carried out photoetching treatment formation bridge deck structure figure; The thickness of described bridge deck structure figure is more than or equal to the thickness of metal bridge floor;
S52: with metal filled bridge deck structure figure;
S53: adopt stripping technology that the metal bridge floor is peeled off and formed to the photoresist film that the bridge floor figure is filled with metal.
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| CN110108367A (en) * | 2019-05-22 | 2019-08-09 | 电子科技大学 | A kind of more bridge pier micro-bridge structures of bilayer and micro-metering bolometer |
| CN112441554A (en) * | 2019-08-30 | 2021-03-05 | 中国科学院微电子研究所 | Machining instrument for micro-nano metal three-dimensional structure |
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| CN112441554A (en) * | 2019-08-30 | 2021-03-05 | 中国科学院微电子研究所 | Machining instrument for micro-nano metal three-dimensional structure |
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