CN103337786A - Tunable laser module - Google Patents
Tunable laser module Download PDFInfo
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- CN103337786A CN103337786A CN2013102065383A CN201310206538A CN103337786A CN 103337786 A CN103337786 A CN 103337786A CN 2013102065383 A CN2013102065383 A CN 2013102065383A CN 201310206538 A CN201310206538 A CN 201310206538A CN 103337786 A CN103337786 A CN 103337786A
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Abstract
A tunable laser module comprises a temperature control chip, a tunable laser, a laser driver chip, a zero-drift operation amplifier chip, a digital potentiometer chip, a single-chip microcomputer chip, an analog-digital sampling chip, a pin, a first linear power supply chip and a second linear power supply chip. A first output end of the tunable laser is connected with a first input end of the temperature control chip, and a first input end of tunable laser is connected with an output end of the temperature control chip. An output end of the laser driver chip is connected with a second input end of the tunable laser. An output end of the zero-drift operation amplifier chip is connected with a third input end of the tunable laser. An output end of the digital potentiometer chip is connected with an input end of the zero-drift operation amplifier chip. A first output end of the single-chip microcomputer chip is connected with an input end of the tunable laser driver chip, and a second output end of the single-chip microcomputer chip is connected with an input end of the digital potentiometer chip. An output end of the analog-digital sampling chip is connected with an input end of the single-chip microcomputer chip, and an input end of the analog-digital sampling chip is connected with a second output end of the tunable laser. The pin is in linear connection with the single-chip microcomputer chip. The first linear power supply chip and the second linear power supply chip are respectively in linear connection with the pin.
Description
Technical field
The present invention relates to the opto-electronic device encapsulation field, relate in particular to a kind of tunable laser module.
Background technology
Tunable laser is widely used in optical communication, fields such as Fibre Optical Sensor.Tunable laser based on Current Control Technology adopts sampled-grating distributed Bragg reflection SGDBR (Sampled Grating Distributed Bragg Reflector) structure.The laser of the type mainly is divided into semiconductor amplification region, preceding Bragg grating district, active region, phase place adjustment district and Bragg grating district, back.Wherein preceding Bragg grating district, phase place adjustment district and Bragg grating district, back change this regional molecular distribution structure by different electric currents respectively, thereby change the cyclophysis of Bragg grating.
The wavelength of tunable laser is difficult to stable, needs to monitor optical wavelength and design meticulous feedback circuit it is controlled.In addition, general tunable laser is not considered the quick tuning problem of wavelength at the beginning of its design, the general wavelength tuning speed of inferior millisecond magnitude that only needs gets final product, and the phase region electrode of tunable laser is generally made ordinary electrode, and it is tuning not to be suitable for the high speed of laser wavelength.
This patent proposes a kind of encapsulating structure and modular design scheme that is applied to semiconductor laser with tunable, with the wavelength tuning that solves tunable laser and Wavelength stabilized.
Summary of the invention
Main purpose of the present invention is to provide a kind of semiconductor tunable laser module, in this scheme, the encapsulation of tunable laser chip is integrated, and the laser filtering device is used for measuring the wave length shift of laser, designed the wavelength feedback loop in the module, laser wavelength is carried out FEEDBACK CONTROL, realize the Wavelength stabilized of laser and accurately tuning.The phase region electrode of this external laser is made high frequency along separate routes and the direct current biasing shunt, thereby can realize the high speed of wavelength tuning.
The invention provides a kind of tunable laser module, comprising:
-temperature control chip;
-tunable laser, its first output is connected with the first input end of temperature control chip, and its first input end is connected with the output of temperature control chip;
-laser driving chip, its output is connected with second input of tunable laser;
-drift amplifier chip, its output is connected with the 3rd input of tunable laser;
-digital regulation resistance chip, its output is connected with drift amplifier chip input;
-singlechip chip, its first output is connected with the input that tunable laser drives chip, and its second output is connected with the input of digital regulation resistance chip;
-modulus sampling A, its output is connected with the input of singlechip chip, and its input is connected with second output of tunable laser;
-contact pin, it is connected with singlechip chip is linear;
-the first linear power supply chip and the second linear power supply chip, it is connected with contact pin is linear respectively.
The invention has the beneficial effects as follows: the tunable laser module that this encapsulation scheme is designed can not only be realized tuning and wavelength on a large scale stable of tunable laser, can also be implemented in the high speed wavelength tuning in the small wavelength scope.
Description of drawings
For further describing concrete technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 is tunable laser module circuit design block diagram provided by the invention;
Fig. 2 is tunable laser chip encapsulation schematic diagram provided by the invention.
Embodiment
See also Fig. 1, shown in Figure 2, the invention provides a kind of tunable laser module, comprising:
-temperature control chip 1; One tunable laser 2, its first output is connected with the first input end of temperature control chip 1, and its first input end is connected with the output of temperature control chip 1;
-laser driving chip 3, its output is connected with second input of tunable laser 2;
-drift amplifier chip 4, its output is connected with the 3rd input of tunable laser 2;
-digital regulation resistance chip 5, its output is connected with drift amplifier chip 4 inputs;
-singlechip chip 6, its first output is connected with the input that tunable laser drives chip 3, and its second output is connected with the input of digital regulation resistance chip 5;
-modulus sampling A 7, its output is connected with the input of singlechip chip 6, and its input is connected with second output of tunable laser 2;
-contact pin 8, itself and 6 linear connections of singlechip chip;
-the first linear power supply chip 9 and the second linear power supply chip 10, they are connected with contact pin 8 linearities respectively.
This tunable laser 2 comprises:
-semiconductor optical amplifier chip 21;
-tunable laser chip 22, it is produced on the laser thermal sediment 27, and this semiconductor optical amplifier chip 21 is positioned at the front end of tunable laser chip 22, with optical fiber coupling output;
-Fabry Perot etalon 23, it is positioned at the rear end of tunable laser chip 22, and it is produced on the laser thermal sediment 27;
-photodetector 24, it is positioned at the rear end of Fabry Perot etalon 23, and it is produced on the laser thermal sediment 27, is connected with second output of tunable laser 2;
-thermistor 25, it is produced on the laser thermal sediment 27, is positioned at a side of Fabry Perot etalon 23 and thermistor 25, is connected with the output of tunable laser;
-semiconductor cooler 26, it is produced on the laser thermal sediment 27, is connected with the input of tunable laser;
-the first region 28, it is positioned at the opposite side of Fabry Perot etalon 23 and thermistor 25, is connected for 23 linear connections respectively with tunable laser chip 22, semiconductor optical amplifier 21, photodetector;
Wherein this thermistor 25 and semiconductor cooler 26 all use viscose glue to be attached on the laser thermal sediment 27.
The first region 28 comprises: laser gain region electrode 281, the first laser phase region electrode 282, the second laser phase region electrode 283, semiconductor optical amplifier electrode 284, the first laser grid region electrode 285, the second laser grid region electrode 286, be total to ground electrode 287, photo-detector electrode 288 and photo-detector be ground electrode 289 altogether, this laser gain region electrode 281 wherein, the first laser phase region electrode 282, the second laser phase region electrode 283, the first laser grid region electrode 285, the second laser grid region electrode 286, respectively with tunable laser chip 22 on counter electrode be weldingly connected by spun gold and connect, electrode on semiconductor optical amplifier electrode 284 and the semiconductor optical amplifier chip 21 is weldingly connected by spun gold and connects, common ground electrode on common ground electrode 287 and semiconductor optical amplifier chip 21 and the tunable laser chip 22 is weldingly connected by spun gold and connects, and the electrode on the common ground electrode 289 of photo-detector electrode 288 and photo-detector and the photodetector 24 is weldingly connected by spun gold and connects.
Temperature control chip 1 in the tunable laser module is connected with semiconductor cooler 26 with thermistor 25.
As above describe the complete substantially structure that has represented this tunable laser module, adopt the benefit of this encapsulating structure maximum to be practicality and reliability.Process Fabry Perot etalon backlight 23 filtering of tunable laser chip 22 because the Perot etalon tool is different to the light transmission of different wave length, thereby can be differentiated optical maser wavelength by the luminous intensity that photodetector 24 receives.
Coarse adjustment in tuning minute and the fine tuning of tunable laser wavelength.Regulate the voltage of the first laser grid region electrode 285 and the second laser grid region electrode 286, can be on a large scale rough adjusting wavelength; Change the first laser phase region electrode 282 and second laser electric current of region electrode 283 mutually, also can accomplish in a big way tuning of wavelength; Regulate the adjusting laser wavelength that the injection electric current of laser gain region electrode 281 can be meticulous.By controlling voltage or the electric current of this three classes electrode respectively, can realize that the wavelength tuning of tunable laser is with stable.
The above; only be the embodiment among the present invention, but protection scope of the present invention is not limited thereto, anyly is familiar with the people of this technology in the disclosed technical scope of the present invention; the conversion that can expect easily or replacement all should be encompassed in of the present invention comprising within the scope.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (7)
1. tunable laser module, comprising:
-temperature control chip;
-tunable laser, its first output is connected with the first input end of temperature control chip, and its first input end is connected with the output of temperature control chip;
-laser driving chip, its output is connected with second input of tunable laser;
-drift amplifier chip, its output is connected with the 3rd input of tunable laser;
-digital regulation resistance chip, its output is connected with drift amplifier chip input;
-singlechip chip, its first output is connected with the input that tunable laser drives chip, and its second output is connected with the input of digital regulation resistance chip;
-modulus sampling A, its output is connected with the input of singlechip chip, and its input is connected with second output of tunable laser;
-contact pin, it is connected with singlechip chip is linear;
-the first linear power supply chip and the second linear power supply chip, it is connected with contact pin is linear respectively.
2. tunable laser module as claimed in claim 1, wherein this tunable laser comprises:
-semiconductor optical amplifier chip;
-tunable laser chip, it is produced on the laser thermal sediment, and this semiconductor optical amplifier chip is positioned at the front end of tunable laser chip, with optical fiber coupling output;
-Fabry Perot etalon, it is positioned at the rear end of tunable laser chip, and it is produced on the laser thermal sediment;
-photodetector, it is positioned at the rear end of Fabry Perot etalon, and it is produced on the laser thermal sediment, is connected with second output of tunable laser;
-thermistor, it is produced on the laser thermal sediment, is positioned at a side of Fabry Perot etalon and thermistor, is connected with the output of tunable laser;
-semiconductor cooler, it is produced on the laser thermal sediment, is connected with the input of tunable laser;
-the first region, it is positioned at the opposite side of Fabry Perot etalon and thermistor, is connected linear the connection respectively with tunable laser chip, semiconductor optical amplifier, photodetector;
-the second electrode district, it is positioned at a side of tunable laser chip, and is connected with thermistor, semiconductor cooler are linear respectively.
3. tunable laser module as claimed in claim 2, wherein this thermistor and semiconductor cooler all use viscose glue to be attached on the laser thermal sediment.
4. tunable laser module as claimed in claim 2, wherein the first region comprises: the laser gain region electrode, the first laser phase region electrode, the second laser phase region electrode, the semiconductor optical amplifier electrode, the first laser grid region electrode, the second laser grid region electrode, be total to ground electrode, photo-detector electrode and photo-detector be ground electrode altogether, this laser gain region electrode wherein, the first laser phase region electrode, the second laser phase region electrode, the first laser grid region electrode, the second laser grid region electrode respectively with the tunable laser chip on counter electrode be weldingly connected by spun gold and connect, electrode on semiconductor optical amplifier electrode and the semiconductor optical amplifier chip is weldingly connected by spun gold and connects, common ground electrode on common ground electrode and semiconductor optical amplifier chip and the tunable laser chip is weldingly connected by spun gold and connects, and the electrode on the common ground electrode of photo-detector electrode and photo-detector and the photodetector is weldingly connected by spun gold and connects.
5. tunable laser module as claimed in claim 2, wherein second electrode district comprises: the first thermistor electrode, the second thermistor electrode, the first semiconductor cooler electrode and the second semiconductor cooler electrode, wherein the first thermistor electrode and the second thermistor electrode respectively with thermistor on two electrodes be weldingly connected by spun gold and connect, the first semiconductor cooler electrode and the second semiconductor cooler electrode respectively with semiconductor cooler on electrode be weldingly connected by spun gold and connect;
6. tunable laser module as claimed in claim 1, wherein this temperature control chip is connected with semiconductor cooler with thermistor.
7. tunable laser module as claimed in claim 1, wherein this laser driving chip is controlled by singlechip chip, external equipment is communicated by letter with singlechip chip by contact pin, laser driving chip and a drift amplifier chip drive tunable laser jointly, and singlechip chip is according to the drive current of the sampled signal FEEDBACK CONTROL laser of modulus sampling A.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310206538.3A CN103337786B (en) | 2013-05-29 | 2013-05-29 | Tunable laser module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310206538.3A CN103337786B (en) | 2013-05-29 | 2013-05-29 | Tunable laser module |
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| CN103337786A true CN103337786A (en) | 2013-10-02 |
| CN103337786B CN103337786B (en) | 2015-12-23 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105186282A (en) * | 2015-08-25 | 2015-12-23 | 中国科学院半导体研究所 | High-frequency-stabilization tunable narrow linewidth laser and use method thereof |
| CN106207747A (en) * | 2016-08-24 | 2016-12-07 | 深圳新飞通光电子技术有限公司 | Parallel tunable laser module and the method realizing the compensation of each interchannel frequency fine tuning thereof |
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| US20010036210A1 (en) * | 1998-12-31 | 2001-11-01 | Nokia Networks Oy | Method and a coupling to change the wavelength of an optical transmitter in a system using wavelength division multiplexing |
| CN1933375A (en) * | 2005-09-12 | 2007-03-21 | 中兴通讯股份有限公司 | Tunable regulating light transmitting module and scaling and regulating method thereof |
| CN1971468A (en) * | 2006-11-30 | 2007-05-30 | 武汉电信器件有限公司 | Control device of temperature of tube core of laser based on SCM and its control flow |
| CN101494504A (en) * | 2008-12-16 | 2009-07-29 | 武汉电信器件有限公司 | Automatic control optical module with constant average light power and extinction ratio based on singlechip |
| WO2009152658A1 (en) * | 2008-06-19 | 2009-12-23 | 中兴通讯股份有限公司 | Tunable laser module and controlling method thereof |
-
2013
- 2013-05-29 CN CN201310206538.3A patent/CN103337786B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010036210A1 (en) * | 1998-12-31 | 2001-11-01 | Nokia Networks Oy | Method and a coupling to change the wavelength of an optical transmitter in a system using wavelength division multiplexing |
| CN1933375A (en) * | 2005-09-12 | 2007-03-21 | 中兴通讯股份有限公司 | Tunable regulating light transmitting module and scaling and regulating method thereof |
| CN1971468A (en) * | 2006-11-30 | 2007-05-30 | 武汉电信器件有限公司 | Control device of temperature of tube core of laser based on SCM and its control flow |
| WO2009152658A1 (en) * | 2008-06-19 | 2009-12-23 | 中兴通讯股份有限公司 | Tunable laser module and controlling method thereof |
| CN101494504A (en) * | 2008-12-16 | 2009-07-29 | 武汉电信器件有限公司 | Automatic control optical module with constant average light power and extinction ratio based on singlechip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105186282A (en) * | 2015-08-25 | 2015-12-23 | 中国科学院半导体研究所 | High-frequency-stabilization tunable narrow linewidth laser and use method thereof |
| CN106207747A (en) * | 2016-08-24 | 2016-12-07 | 深圳新飞通光电子技术有限公司 | Parallel tunable laser module and the method realizing the compensation of each interchannel frequency fine tuning thereof |
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| CN103337786B (en) | 2015-12-23 |
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